Abstract: The object of the present invention is to achieve reliable and safe pulling operation of a single crystal having large diameter and heavy weight in a chamber with reduced pressure. According to the present invention, a constricted portion is formed under a seed crystal, and a single crystal is pulled up by supporting the constricted portion, and a support base 30 is used, which has an opening 22, serving as a through-hole, and a slit 34, which leads from the opening to outer periphery of the support base, and a portion with larger diameter of the constricted portion is supported from below in linear contact manner. The support base 30 further comprises a recess 32, which leads to the opening 22, and it can be designed and selected to have such configuration as to suit the shape of the constricted portion. The support base 30 can be moved between a non-support position and a support position by operating a moving unit.

Abstract: A single crystal pulling apparatus and droppage preventing device constituted so as to enable the mechanical strength required by an arm to be decreased, and to enable arm manufacturing costs to be reduced and the pulling apparatus to be made more compact, and furthermore, to eliminate the need to provide in a separate manner a mechanism for preventing single crystal droppage, and to enhance reliability and durability by not adversely affecting a clean environment during single crystal growth. The arm has a mating member, which mates with the mating portion of a single crystal, and does not allow the single crystal to drop when pulling the single crystal. The arm undergoes an attitude change to a mating position in accordance with moving a circular motion having a circular motion support point as the center of the circular motion.

Abstract: An apparatus for fabricating single-crystal silicon easily controlling a temperature gradient based on the Czochralski (CZ) method, and more particularly preventing as-grown defects created in order to obtain high-quality single-crystal silicon.The above-mentioned apparatus includes a first thermal shield member surrounding the pulling single-crystal silicon and a second thermal shield member inside the first thermal shield member, surrounding the pulling single-crystal silicon. The second thermal shield member is fixed on the first thermal shield member by a support located on the external surface of the second thermal shield member and connected to the first thermal shield member. The surroundings of a solid-liquid interface are extremely cooled by using the first thermal shield member, thereby a stable shape of the single-crystal silicon is formed. The temperature gradient of the temperature region of 1000.degree. C..about.1200.degree. C.

Abstract: The present invention utilizes a weighing detector as well as a weighing diameter-controlling method in a crystal-pulling apparatus using a wire method for measuring the crystal weight in accuracy. A pulling wire 4 and a wire rolling means 20, having a wire rolling drum 21, suspended on a weighing detector 2 in a freely rotating way. Accordingly, in the weighing detector 2, the weights of the pulling wire 4 and the wire rolling means 20 are served to balance the loading weight. In addition, the vertical central line 6 of the weighing detector, the rotating axis of the wire rolling drum 21, the rotating axis of the wire rolling means 20, and the axis of pulling crystals are all consistent. Consequently, the whole gravity center is located on the vertical central line of the weighing detector 2. When pulling the single crystals at the same time as rolling the wire, the gravity center of the wire rolling means is shifted merely depending on the diameter variation at the pulling wire.

Abstract: A clamping portion 2 is suspended by wire cables 5. A linkage 3 connects the clamping portion 2 and a contacting portion 4 disposed below the clamping portion 2. One end of a circular-arc member 1 is pivotally supported by a swivel axis 33. The circular-arc member 1 is swiveled by guiding the contacting portion 4 to contact with the shoulder 63 of the crystal body 6.

Abstract: A process for reducing the load on a seed crystal during the pulling of a single crystal uses a pulling device. An adhesive bond is made between a conical section at the start of the single crystal and a retaining body. The load on the seed crystal is reduced by creating a tensile stress between the retaining body and the pulling device.

Abstract: In a crystal holding apparatus, a corrugated portion between a seed crystal and a straight cylindrical portion of a monocrystal is held by holding portions of a lifting jig during a monocrystal growth process in which the seed crystal is brought into contact with material melt and is subsequently pulled while being rotated. In the crystal holding apparatus, an attachment member for establishing surface contact with the corrugated portion of the crystal is attached to the tip end of each holding portion of the lifting jig. Therefore, the monocrystal can be held reliably, so that the breaking and falling down of the monocrystal during the pulling operation can be prevented.

Abstract: An apparatus for weighing single crystals during Czochralski crystal growing processes includes a pivotal elongated member such as a beam, a contact element and a load sensor. The load sensor can be mounted to at least one of the elongated member and a support surface of a crystal growing vessel. The beam is attached to a lift for pulling single crystals from a melt. During crystal growing, the weight of the grown crystal causes increased loading along the elongated member such that the contact element exerts an increasing force on the load sensor. The contact element and load sensor have respective contact surfaces which are shaped such that the force exerted on the load sensor corresponds substantially to the weight of grown single crystal. Typically, at least one of the contact surfaces is a rolling surface.

Abstract: A single crystal pulling method includes the steps of: immersing seed crystal in a melt; growing single crystal around the seed crystal and reducing its diameter to remove dislocation in the single crystal; prior to forming a straight waist product portion of single crystal having a prescribed diameter, forming a straight waist holding portion having a diameter smaller than the prescribed diameter; holding the straight waist holding portion by using a single crystal holding device; and pulling the straight waist product portion while the straight waist holding portion is held. Preferably the step of forming the straight waist holding portion includes a step of varying a pulling speed to make unevenness in the surface thereof.

Abstract: This invention provides a single-crystal manufacturing device which can perform the lifting of single crystals at a high speed, allowing single crystals with uniform qualities along their axes can be obtained.The method for manufacturing single crystals according to this invention are achieved by using a single-crystal manufacturing device provided with a combination of a heat shield plate 1 and an after-cooler 21. The heat shield plate 1, the thickness of the lower portion of which is 2-6 times that of a conventional heat shield plate, surrounds the single crystal 7 being lifted. The after-cooler 21 covers the top surface of the rim 1a of the heat shield plate 1 and encompasses the single crystal 7 being lifted. The amount of cooling water supplied to the after-cooler 21 is slowly increased until the time the single crystal is lifted to a preset length, and then the amount of cooling water is kept constant.

Abstract: The object of the present invention is to achieve reliable and safe pulling operation of a single crystal having large diameter and heavy weight in a chamber with reduced pressure. The semiconductor manufacturing apparatus of the invention comprises a seed crystal lift mechanism for holding a seed crystal and for moving it up and down, and a single crystal gripping mechanism for gripping a constricted portion of a single crystal formed, whereby the apparatus comprises an accommodation container 10a for accommodating at least a driving unit 14 of the seed crystal lift mechanism and at least a driving unit 15 of the single crystal gripping mechanism, and further accommodation container lift mechanisms 3 and 4 for moving the accommodation container up and down. The accommodation container may be designed in heat-insulating structure, or a cooling means for cooling inside the accommodation container may be further provided.

Abstract: The object of the present invention is to prevent the single crystal during pulling operation from turning to polycrystal when the single crystal under pulling operation is gripped by a gripper and to achieve the gripping automatically. When a wire 1 is moved down to immerse a seed crystal 3 into surface of a Si melt 11 in a quartz crucible 10, arms 12 and 13 wait at such positions that tips do not come into contact with the Si melt 11, and tips of the gripping arm 12 are opened so that the tips are not brought into contact with a portion with larger diameter 5 during pulling operation. By pulling up the wire 1, a neck portion 4, a portion with larger diameter 5, a constricted portion 6, and a crystal main portion 7 are formed under the seed crystal 3. When a sensor 14 detects that upper surface of the portion with larger diameter 5 has come into contact with the tips of the contact/detecting arm 13 during pulling operation, tips of the gripping arm 12 are closed and grip the constricted portion 6.

Abstract: A crystal growing apparatus is able to provide dopant to a melt in the apparatus. A hopper is carrying dopant is integrated into a pull shaft of the apparatus so that dopant can be added to the melt without providing additional orifices in the apparatus or by opening the interior of the apparatus to the atmosphere.

Abstract: When a pulled single crystal becomes heavier, the strength of a seed crystal holder made of a carbon material is not sufficient, leading to falling of the single crystal. On the other hand, a seed crystal holder made of metal causes heavy metal contamination, or the strength thereof deteriorates early because of thermal fatigue. Accordingly, a seed crystal holder, comprising an inner cylindrical body made of metal which directly holds a seed crystal, and a carbon cylindrical body arranged around the inner cylindrical body which covers the periphery thereof, is used.

Abstract: In a device for handling heavy components of a crystal puller according to the Czochralski method, a supporting beam that can be pivoted about one vertical leg of a supporting frame and vertically adjusted includes holding claws for accommodating components or auxiliary devices. Profile rails, on which a carriage can be laterally displaced, are arranged perpendicular to the supporting beam. The carriage can be connected to a receptacle for gripping and holding the crystal.

Abstract: This invention provides a method and a apparatus capable of manufacturing single crystals with an oxygen density of less than 12.times.10.sup.17 atoms/cm.sup.3 or less than 10.times.10.sup.17 atoms/cm.sup.3, and wherein the oxygen density of the single crystal produced is uniformly distributed along its longitudinal axis. The electrical power inputted into the main heater 6 surrounding the quartz crucible 4 and the top heater 9 shaped like a reverse frustrated cone and disposed above the quartz crucible 4, is controlled to keep the temperature of the melt 5 in a preset range during the process of pulling up the single crystal silicon 10. When combining the main heater 6 and the top heater 9, the heat emitted from the main heater 6 can be kept small, and the heat load on the quartz crucible 4 and the amount of oxygen released from the quartz crucible 4 and dissloved into melt 5 can be reduced.

Abstract: The hold member has a small-diameter portion and a large-diameter portion. An inner cylinder and an outer cylinder are disposed around the hold member in a concentric manner. The upper end of the hold member is affixed to a wire and suspended therefrom. A clearance is formed between the small-diameter portion and the inner cylinder. Clearances are created between the outer peripheral surface of the inner cylinder and the inner peripheral surface of the outer cylinder.

Abstract: An apparatus and a method for fabricating a single-crystal semiconductor by means of CZ method are provided for improving the quality control through the modification of thermal cycle of a pulled single-crystal semiconductor. The apparatus includes a ring after heater which is capable of elevation. The method decreases a temperature gradient to smaller than 20.degree. C./cm, and preferably under 15.degree. C./cm, when the pulled single-crystal semiconductor is cooled from 1200.degree. C. to 1000.degree. C. The after heater therefore heats the single-crystal semiconductor where there is a temperature of 100-300.degree. C. lower than the range of 1200-1000.degree. C. A thermal shelter is provided to retain a temperature gradient of larger than 20.degree. C./cm when the single-crystal semiconductor is within the temperature range between the melting point and 1250.degree. C. The after heater and the shelter can be raised to an upper portion when polysilicon blocks are charged and a twisting step is carried out.

Abstract: A device and method for producing single crystals by the Czohralski method can control the temperature distribution and thermal history of single crystals to improve the production efficiency and quality of single crystals. The device includes a cylinder coaxially surrounding a single crystal pulling rod, having an upper end airtightly connected to the ceiling of a pulling chamber and a lower end close to the surface of a melt in a crucible. A heat insulating element is attached to the lower end of the cylinder, and is surrounded by a surface of the crystal, the inside wall of the crucible and the surface of the melt. The heat insulating element is sized to occupy 30-95% by volume of the space above the melt, and the space has a height corresponding to the radius of the crystal.

Abstract: In method for manufacturing a silicon single crystal in accordance with a Czochralski method, during the growth of the silicon single crystal, pulling is performed such that a solid-liquid interface in the crystal, excluding a peripheral 5 mm-width portion, exists within a range of an average vertical position of the solid-liquid interface .+-.5 mm. There is also disclosed a method for manufacturing a silicon single crystal in accordance with the Czochralski method, wherein during the growth of a silicon single crystal, a furnace temperature is controlled such that a temperature gradient difference .DELTA.G (=Ge-Gc) is not greater than 5.degree. C./cm, where Ge is a temperature gradient (.degree.C./cm) at a peripheral portion of the crystal, and Gc is a temperature gradient (.degree.C./cm) at a central portion of the crystal, both in an in-crystal descending temperature zone between 1420.degree. C. and 1350.degree. C. or between a melting point of silicon and 1400.degree. C.

Abstract: An apparatus for pulling silicon single crystal comprises a main apparatus body, a crucible disposed therein and comprised of a quartz crucible part and a crucible protection part, a heating member disposed at the outside of the crucible therearound, a temperature keeping cylindrical body disposed at the outside of the heating member, and a heat insulating material disposed between the temperature keeping cylindrical body and the main apparatus body, in which at least an inside upper region of the temperature keeping cylindrical body and/or the crucible protection part made from a carbonaceous material is covered with a thermally decomposed carbon film.

Abstract: This invention provides a apparatus and a method of pulling up single crystals, which respond to the weight increase of semiconductor single crystal produced by the CZ method. The retaining wire wind-up mechanisms 11, 12; multiple pairs of guide pipes 4a, 4c capable of being moved upward or downward with respect to the seed holder 1; and a plurality of retaining wires 13, 15, each retaining wire passing through one pair of the guide pipes and having its central portion to be bent into a "U" shape are provided in the central portion of the lifting wire 5. The single crystal 17 can be retained by the retaining wire 13, 15, if the guide pipes 4a, 4c are driven to move downward and the "U" shaped portions of the retaining wires 13, 15 are driven to engage with the necked portion 17b so as to lift single crystal 17. The load is determined based on the detected value coming from the weight sensors installed on the means for winding up the retaining wires.

Abstract: A seed crystal holder used in a crystal pulling apparatus operated in accordance with the Czochralski method. In the seed crystal holder, a heat-resistant cushioning material is provided between the surface of a seed crystal and the contact surface of claws of the holder or between a cutaway surface of the seed crystal and a contact surface of an insert of the holder. The heat-resistant cushioning material is selected from the group consisting of carbon fiber felt, glass fiber felt, metallic fiber felt, or selected from materials that cause plastic deformation such as Al.

Abstract: A crystal-clamping fixture 30 is suspended by a pulling up mechanism 1 through the use of wires. The crystal-clamping fixture 30 includes a box 31 and a plurality of holding rods 32. The box 31 has two openings formed on its top and bottom sides. The reduced portion 2a, the enlarged portion 2b and the necked portion 2c formed beneath the seed crystal 5 are allowed to penetrate through the two openings during the pulling up operation. A plurality of "S" shaped slots 31a, 31b are formed on the lateral sides of the box 31. The holding rods 32 capable of rotating along the path of the "S" shaped slots 31a, 31b are horizontally disposed within the box 31 by inserting their two end portions through the "S" shaped slots 31a, 31b. The holding rods kept restrained at the upper ends of the "S" shaped slots are pushed out by the conic surface formed at the upper part of the enlarged portion 2b and rotate and descend to reach the lower ends of the "S" shaped slots.

Abstract: This invention provides a apparatus for pulling up crystal bodies, which is capable of firmly clamping and safely pulling up large-diameter crystal bodies regardless of the location of the necked portions formed on the top of the crystal bodies. A large-diameter portion 52 and a necked portion 51 are formed on the top of the crystal body 5. The swaying members 12 of the necked-portion clamp 1 are capable of swaying upward and downward without restraint. The stopper 14 restrains the swaying members 12 to sway below the horizontal plane on which the swaying members 12a are located. The large-diameter portion 52 can pass through the clamp body 11 by lowering the necked-portion clamp 1 to sway the swaying members 12 upward. The swaying members 12 close to clamp the necked portion 51 when the necked-portion clamp 1 reaches a location near the necked portion 51. The distance between the necked-portion clamp 1 and the seed-crystal 3 is adjustable.

Abstract: An apparatus for pulling a monocrystalline ingot from a semiconductor source material located within a growth chamber as the ingot is grown on a seed crystal according to the Czochralski method. The apparatus comprises a drum, a chuck constructed for holding the seed crystal and the ingot, and a cable having a first end connected to the drum, a second end connected to the chuck and a portion wound around the drum. The portion of the cable wound around the drum exerts a normal force on a circumferential surface of the drum corresponding to the tension in the cable. The drum and cable interact to produce a friction force resisting sliding movement of the cable relative to the drum in a direction lengthwise of the cable. The drum is capable of unwinding cable from the drum thereby to let out the cable and lower the chuck, and capable of winding the cable around the drum thereby to reel in the cable and draw the chuck upwardly.

Abstract: An apparatus for producing silicon crystals (24) having highly uniform characteristics from a silicon melt (22) comprising a furnace (12), a crucible (14) disposed within the furnace (12) for containing the silicon melt (22), a heater (20) disposed around the crucible (14) for heating the silicon melt (22) and a pair of cusp magnets (28, 30) disposed around the furnace (12) and spaced a distance apart from one another such that the distance between the cusp magnets (28, 30) is variable.

Abstract: In a lifting unit for a device for pulling monocrystals, a frame that extends in the horizontal direction and surrounds a pulling shaft and/or a crystal is provided with at least two bearings as well as two-armed grippers that are held in the aforementioned bearings and can be pivoted in vertical planes. The respective gripping arms are aligned with the rotational axis of the frame and have such a length that the end surfaces of the gripping arms which face one another tightly adjoin one another in the closed position and only allow a limited pivoting movement. The respective free ends of the two-armed grippers are coupled to tie rods that approximately extend in the vertical direction. The upper ends of the tie rods are connected in articulated fashion via a horizontally extending crossbeam, where the crossbeam with a spindle nut can be adjusted along the pulling shaft via a threaded spindle. The frame is suspended on cables that serve for pivoting the gripping arms.

Abstract: An cylindrical after-heater surrounding a single crystal being lifted and a cylindrical heat-retaining cylinder installed between the after-heater and the single crystal are provided above a reversed frustrated heat-shielding sleeve disposed near the melted liquid. The heat history of the single crystal can be controlled by adjusting the output of the after-heater and the location of the heat-retaining cylinder. By such an arrangement, rapid respond to the change of the heat environment in a furnace can be made and control of the temperature gradient of the single crystal can be achieved. The single crystal, throughout the whole length, is maintained in the range of from 1000.degree. C. to 1200.degree. C. for more than one hour during lifting operation.

Abstract: A puller apparatus for a Czochralski crystal puller system is provided which includes a primary puller chuck and a secondary puller chuck. The primary puller chuck is attached to a seed crystal. The secondary puller chuck is shaped to enclose and retain a portion of a growing crystal so that the growing crystal can be pulled by the secondary puller chuck.

Abstract: In this invention, three equally spaced and "L" shaped hooks 6B are rotatably supported on the upper peripheral wall of the body 6A of the seed holder 6 at pivots 6E. A radiation screen 7 is hung at the front ends of the hooks 6B via three engaging fixtures 6C affixed on its upper rim. The radiation screen 7 shaped like a hollow trancated cone, is used to surround the lower end of the single-crystal being lifted from the quartz crucible 3 which is disposed within the main chamber 1. According to the apparatus for manufacturing a single-crystal which can perform the descending or ascending movements of the radiation screen, the setting operation, and the lifting operation consecutively and automatically. Therefor the apparatus can enhance the productivity and avoid any problems with process automation, furthermore, it is compatible with conventional equipment.

Abstract: Regulating cylinder unit is divided into three parts, a third regulating cylinder shaped essentially like a cylinder and installed on the protection cylinder; a first regulating cylinder and a second regulating cylinder which are shaped like reversed truncated cones with different diameters and are capable of engaging with the third regulating cylinder. In addition, the second and third regulating cylinders are brought together in a preset ordering, that is, a flange formed at the outer peripheral rim of the upper end of the second regulating cylinder is engaged with a stepped portion of the third regulating cylinder, and a flange formed at the outer peripheral rim of the upper end of the first regulating cylinder is engaged with a flange formed at the inner peripheral rim of the lower end of the second regulating cylinder.

Abstract: A process for producing single crystals has been presented which enables the pulling up and growing of single crystals, without loss of accurate control of the oxygen concentration in the crystal, and with excellent dielectric strength of subsequently produced gate oxide films. The process of producing single crystals in accordance with this invention is characterized by confluence of the inert gas flows (33 and 32) once divided into outside and inside a heat resistant and heat insulative component (7).

Abstract: There is disclosed a Czochralski method in which a seed crystal in contact with material melt is pulled, while being rotated, so as to grow a monocrystal, and a part of the crystal being grown is mechanically held during the pulling operation. The crystal is mechanically held in such a way that the weight W(kg) of the crystal satisfies the following Formula (1):W<12.5.times..pi.D.sup.2 /4 (1)where D designates the minimum diameter (mm) of a neck. This makes it possible to pull a heavy monocrystal safely and reliably.

Abstract: In a crystal holding apparatus, a corrugated portion between a seed crystal and a straight cylindrical portion of a crystal is held by a lifting jig during a single-crystal growing process wherein the seed crystal is brought into contact with a material melt and is subsequently pulled while being rotated. The tip end portion of the lifting jig includes a swinging portion having a short stroke which swings to hold or release the corrugated portion. A lock mechanism is also provided in order to swing the swinging portion for opening/closing operation and to lock the swinging portion. Accordingly, it is possible to reliably hold the corrugated portion of a crystal while the crystal is pulled in accordance with the CZ method, for example.

Abstract: This invention provides a method and apparatus for fabricating semiconductor single crystals. By using the method of this invention, the temperature gradient of the single crystal being lifted can be easily controlled. The as-grown defect density can be reduced, and it is possible to manufacture high quality semiconductor single crystals with high oxidation-film breakdown strength. A shield cylinder is used for surrounding the semiconductor single crystal 7 being lifted, the shield cylinder is made to be of the telescopic type and consists of a first shield duct 4, a second shield duct 5, a third shield duct 6. A wire 8 wrapping around a wind-up reel 10 is engaged with the third shield duct 6, and the shield cylinder can be driven to extend or retract by rotating the wind-up reel 10. An ascend and descend rod 3 is connected with the first duct 4, and the shield cylinder can be driven to move upward or downward by lifting or lowering the ascend and descend rod 3.

Abstract: A method, mechanisms and jig for handling a member of a crystal pulling apparatus are disclosed. The crystal pulling apparatus grows a single crystal from a melt of a crystalline material by a CZ method. Handling of a graphite crucible or the like of the crystal pulling apparatus, including a vertical moving operation, a swinging operation, or the like, is performed using a crane and a lifting jig. This makes it possible to readily move the member of the crystal pulling apparatus vertically and otherwise without relying on manual labor.

Abstract: The object of this invention is to provide a method and a device for manufacturing semiconductor single crystals by the CZ method in response to the increase in the weight of semiconductor single crystal produced. The necked portion formed beneath the reduced portion can be held and the single crystal under lifting can be re-melted.

Abstract: A method and an apparatus for pulling a single crystal are disclosed. A first neck portion, a convex portion, and a second neck portion are formed in this order under a seed crystal held by a seed chuck, and subsequent to the second neck portion, a single crystal having a diameter-expanding portion and a straight cylindrical portion is formed. Lifting holders are brought around and in proximity to the second neck portion when the second neck portion rises to a predetermined position during the pulling by the seed chuck. The single crystal and the lifting holders are moved relative to each other in the vertical direction to thereby bring the convex portion into contact with the lifting holders in a resting manner, so that part of a load borne by the seed chuck is shifted to the lifting holders. Subsequently, the pulling operation is performed by the lifting holders. Accordingly, a single crystal having a larger weight can be pulled safely while maintaining high quality.

Abstract: The pull head of a Czochralski crystal puller is mounted on a frame which is supported independently from the crystal puller receiving chamber. In particular, the pull head is mounted on a rigid frame which is supported by the same surface that supports the melt charge crucible. The pull head thereby can be aligned relative to the rigid frame, rather than to the receiving chamber, and can be accurately aligned with the crucible rotation axis and positioned in order to insure that its rotation axis is vertical. In one embodiment, the pull head is mounted on a plate which engages alignment pins attached to the rigid frame. The alignment pins insure proper alignment of the pull head relative to the frame. When the receiving chamber is raised to allow the crystal to be removed, the plate is engaged by the receiving chamber and lifted off the alignment pins so that the pull head moves with the receiving chamber.

Abstract: An apparatus for producing a silicon single crystal grown by the Czochralski method includes a main chamber having a round soulder interconnecting the upper end of a side wall and the lower end of a neck of the main chamber. The round shoulder has an inside surface so profiled as to form a portion of the periphery of an ellipse drawn about two foci which are composed of the upper end of a heater and a point of the longitudinal axis of a silicon single crystal being grown. The inside surface has a low emissivity. With the apparatus thus constructed, a silicon single crystal having a high dielectric breakdown strength of oxide film (SiO.sub.2) can be produced in a stable manner with high yield and productivity.

Abstract: The winding drum of the cable-winding device is kept air-tight by an air-tight container. A lower elastic sealing member 1a is interposed between the air-tight container and the rotation table. The air-tight container, the lower elastic sealing member 1a, and the chamber are communicated with one another. The air-tight container and the chamber are filled with inert gases at less than atmospheric pressure. The rotation table, the weight sensors, the drive motor, the gear are disposed in the atmosphere. An arm is vertically installed on the rotation table. An upper elastic sealing member 1b is interposed between the end portion of the arm and the air-tight container. The upper elastic sealing member is communicated the interior of the air-tight container through a through hole. The arm support the top portion of the upper elastic sealing member.

Abstract: A seed crystal holder is used to grow a single crystal in an intended direction. In order to grow a single crystal in an intended direction by a crystal pulling method, a seed crystal is accurately cut out along a crystal orientation, and this seed crystal is accurately held in a predetermined attitude by the seed crystal holder. A seed crystal insertion bore having a rectangular cross-section is formed in the body of the seed crystal holder. A seed crystal having a taper surface at one edge is inserted into the seed crystal insertion bore. The inserted seed crystal is pressed at its taper surface by a taper surface of a block, so that two surfaces of the seed crystal are fixedly pressed against two inner surfaces of the seed crystal insertion bore. The other end of the block is covered with a block-retaining ring, so that the block does not come off the seed crystal holder.

Abstract: A crucible is mounted on a crucible support bolt (11, 34) in a vacuum chamber (33) resting on a base stand (32) and can be heated by the thermal radiation of a heating element. A drawing element (35) is provided above the melt, by means of which the crystal can be drawn up from the surface of the melt into a transfer lock chamber (36), which can be pivoted laterally with respect to the base stand (32). A separating device is provided between the crystal and the drawing element (35) to separate the crystal from the drawing element (35). The base stand (32) is formed by a platform (38) supported by four posts (37) three additional legs (39) of equal length extend upward from three of the four corners of the rectangular platform (38) holding the vacuum chamber (33), these (39) being held together at their top ends by a horizontal frame (40), which forms a right triangle.

Abstract: In a crystal holding apparatus, a stepped engagement portion of a single crystal formed below a seed crystal is held by holding portions of a pair of lifting jigs so as to be pulled up. A lock mechanism consisting of a hook lever and an engagement pin is provided in order to prevent the closed lifting jigs from opening. Further, a portion of each holding portion to be contacted with a crystal is provided with a swing claw which is swingable about a horizontal pin. Accordingly, it becomes possible to reliably hold the crystal, to prevent generation of a defect in the crystal structure, and to prevent a material melt from being contaminated.

Abstract: An apparatus for producing a silicon single crystal grown by the Czochralski process. The apparatus includes a hollow growth chamber, a quartz crucible disposed within the growth chamber, and a pulling member for pulling a growing silicon single crystal upward from a silicon melt retained in the crucible. A crystal chamber above the growth chamber receives the crystal as it is pulled. A joining member joins the growth chamber and the crystal chamber. A first heating member defining a passageway through which the crystal is pulled, for preventing formation of oxygen precipitate nucleation centers in the crystal until the crystal has been pulled through the passageway, is disposed at least partially within the growth chamber. A second heating member defining a passageway through which the crystal is pulled, for controlling the formation of the oxygen precipitate nucleation centers in the crystal, is disposed within the crystal chamber.

Abstract: A crystal pulling apparatus is disclosed in which a single crystal ingot is pulled from a melt of a crystalline material by using a cable. A crimp portion and a spherical portion supported by the crimp portion are provided in the vicinity of the tip of the cable. Two divided couplings are screwed into a chuck body of a seed chuck. The couplings have an accommodation space therein so as to accommodate the cable and the spherical portion, and conical hole sections serving as the shoulder portion of the accommodation space contact and hold the spherical portion. This structure allows the cable to rotate during crystal pulling operation and facilitates attachment of the seed chuck to the cable and removal of the seed chuck from the cable.

Abstract: An enclosing structure extends into a transition zone of a crystal growing system through which the growing crystal is pulled. One or more independent temperature control devices are secured to the inside surface of the enclosing structure, which control devices sense crystal temperature and supply to, or extract heat from, the crystal so that a carefully-controlled thermal gradient can be established either radially or longitudinally in the crystal. The temperature control devices may include temperature sensors that provide temperature information to a central control device connected to each temperature control device. The enclosing structure may have a hollow wall structure through which a heat exchange fluid, such as water, is passed to extract heat from the transition chamber and crystal. The temperature control apparatus may also be segmented so that each segment can be controlled independently of the remaining segments thereby permitting independent control to be effected at different crystal areas.

Abstract: In a single crystal growing apparatus which pulls a semiconductor single crystal rod 14 from a semiconductor melt 13 contained in a quartz crucible 5 to grow the semiconductor single crystal, quartz crucible 5 is designed such that it can move up and down so as to maintain the level of semiconductor melt 13 constant and a main heater 7 which can move up and down and a subheater 10 which can move up and down are provided to heat semiconductor melt 13 so that the thermal environment of semiconductor melt 13 is maintained substantially constant.

Abstract: The present invention provides a method and an apparatus for fabricating a single-crystal semiconductor by means of the CZ method in which the oxygen concentration in the single-crystal semiconductor is controlled within an acceptable range. The apparatus comprises a regulating cylinder concentrically covering the single-crystal semiconductor which is pulled from a melt in a crucible; a main chamber for isolating the growing single-crystal semiconductor from external atmosphere; and a falling gas introducing means on top of the main chamber for introducing an inert gas into the main chamber. The apparatus is characterized in that a whirling gas introducing means on a circumferential portion of the main chamber introduces an whirling inert gas into the main chamber in a tangential direction to the side walls of the main chamber and the regulating cylinder.