Abstract: One or more embodiments relate to a method for controlling fiber growth and fiber diameter in a laser heated pedestal growth (LHPG) system so as to provide long, continuous single-crystal optical fibers of uniform diameter. The method generally provides three independent parameter feedback controls to control the molten zone height, laser power, and fiber drawing rates simultaneously in order to reduce the mismatch between instantaneous diameter changes and current diameter. The method permits the growth of fibers with non-uniform diameters along the fiber's length. The method also provides the capability to stop the LHPG system, remove the exhausted pedestal feedstock with a second pedestal feedstock, and restart the LHPG system to provide a continuous fiber.

Abstract: The present invention relates generally to nanocomposite materials. The present invention relates more particularly to hybrid fibers as well as devices including them and methods for making them. Accordingly, one aspect of the invention is a hybrid fiber including a plurality of nanowires, each nanowire having a length, a width, and a thickness, the length being at least 10 times the width and at least 10 times the thickness; and a plurality of binder elements, each binder element having a length, a width, and a thickness, each substantially smaller than the average length of the nanowires and at least one of which is less than about 10 nm in dimension, the binder elements being arranged to intercouple individual nanowires. In certain embodiments, the binder elements are carbon nanotubes, and the nanowires are formed from silicon carbide.

Abstract: A method for forming epitaxial layer is disclosed. The method includes the steps of providing a semiconductor substrate, and forming an undoped first epitaxial layer in the semiconductor substrate. Preferably, the semiconductor substrate includes at least a recess, the undoped first epitaxial layer has a lattice constant, a bottom thickness, and a side thickness, in which the lattice constant is different from a lattice constant of the semiconductor substrate and the bottom thickness is substantially larger than or equal to the side thickness.

Abstract: A semiconductor device includes a semiconductor substrate and a plurality of transistors. The semiconductor substrate includes at least an iso region (namely an open region) and at least a dense region. The transistors are disposed in the iso region and the dense region respectively. Each transistor includes at least a source/drain region. The source/drain region includes a first epitaxial layer having a bottom thickness and a side thickness, and the bottom thickness is substantially larger than or equal to the side thickness.

Abstract: An apparatus and method for producing a crystalline ribbon continuously from a melt pool of liquid feed material, e.g. silicon. The silicon is melted and flowed into a growth tray to provide a melt pool of liquid silicon. Heat is passively extracted by allowing heat to flow from the melt pool up through a chimney. Heat is simultaneously applied to the growth tray to keep the silicon in its liquid phase while heat loss is occurring through the chimney. A template is placed in contact with the melt pool as heat is lost through the chimney so that the silicon starts to “freeze” (i.e. solidify) and adheres to the template. The template is then pulled from the melt pool thereby producing a continuous ribbon of crystalline silicon.

Abstract: A single-crystal manufacturing apparatus comprising at least: a main chamber configured to accommodate a crucible; a pulling chamber continuously provided above the main chamber, the pulling chamber into which a grown single crystal is pulled and accommodated; a gas inlet provided in the pulling chamber; a gas flow-guide cylinder downwardly extending from a ceiling of the main chamber; and a heat-insulating ring upwardly extending from a lower end portion of the gas flow-guide cylinder with a diameter of the heat-insulating ring increased so as to surround an outside of the gas flow-guide cylinder, wherein at least one window is provided in a region between 50 and 200 mm from a lower end of the gas flow-guide cylinder, and an opening area of the window accounts for 50% or more of a surface area of the region between 50 and 200 mm from the lower end of the gas flow-guide cylinder.

Abstract: Some embodiments of the invention are related to manufacturing semiconductors. Methods and apparatuses are disclosed that provide thin and fully relaxed SiGe layers. In some embodiments, the presence of oxygen between a single crystal structure and a SiGe heteroepitaxial layer, and/or within the SiGe heteroepitaxial layer, allow the SiGe layer to be thin and fully relaxed. In some embodiments, a strained layer of Si can be deposited over the fully relaxed SiGe layer.

Abstract: The present invention can provide a silicon semiconductor substrate used for and epitaxial wafer, in which uniform and high-level gettering ability is obtained irrespective of slicing positions from a silicon single crystal while generation of epitaxial defects can be suppressed, by doping carbon or carbon along with nitrogen during a pulling process of a CZ method or by performing appropriate heat treatment prior to the epitaxial process. Therefore, a crystal production yield can remarkably be improved because a permissible upper limit (concentration margin) of an oxygen concentration which is restricted by formation of a ring-shaped OSF region can be higher and also an excellent gettering ability is exhibited, while allowing an epitaxial wafer to be produced wherein epitaxial defects attributable to substrate crystal defects are not formed.

Abstract: BaTiO3—PbTiO3 series single crystal is single-crystallized by heating BaTiO3—PbTiO3 compact powder member or sintered member having a smaller Pb-containing mol number than Ba-containing mol number, while keeping the powder or substance in non-molten condition. In this way, this single crystal can be manufactured at a crystal growing speed faster still and stabilized more, significantly contributing to improving the dielectric loss and electromechanical coupling coefficient for the provision of excellent BaTiO3—PbTiO3 series single crystal in various properties, as well as for the provision of piezoelectric material having a small ratio of lead content, which is particularly excellent in piezoelectric property and productivity.

Abstract: A method and apparatus for growth of uniform multi-component single crystals is provided. The single crystal material has at least three elements and has a diameter of at least 50 mm, a dislocation density of less than 100 cm?2 and a radial compositional variation of less than 1%.

Abstract: A low-cost and high productivity charging material is provided for use in the recharge or additional charge fabrication of single-crystal semiconductor by means of the CZ method. Common polysilicon rods utilized in recharge or additional charge fabrication have their end portions formed into ring grooves. A joint element is made of silicon. When the end portions of the rods contact, the joint element engages the grooves to connect the rods together along their longitudinal direction. The rods can have arbitrary length, whereas the total weight, including the joint element, must be adjusted by the length to be greater than those of the melted polysilicon and the suspending portions.

Abstract: In a single-crystal manufacturing method, after a single crystal is grown, the crystal is separated from the molten melt and gradually cooled while suspended immediately above the surface of the melt. During this cooling, a measure, which produces solidification of the melt, is locally applied. As a result, the solidification of the melt is selectively forced so that at least the melt forms a crust and prevents the crystal, should it fall, from becoming immersed in molten melt. This measure also protects the crystal from any sudden release of heat such as tends to occur if the melt becomes supercooled prior to the onset of crystallization.