Abstract: The instant invention is a method for converting particulate silicon into monocrystalline silicon suitable for the determination of contaminates present in the particulate silicon. The method uses a silicon vessel, with known levels of the contaminates to be determined, to contain the particulate silicon. The silicon vessel, containing the particulate silicon, is float-zone processed to form a monolithic unit of monocrystalline silicon. The concentration of contaminates in the monocrystalline silicon can then be determined by the more sensitive analytical methods known for analysis of monolithic, monocrystalline silicon. The instant method is especially useful for measuring very low levels of aluminum, boron, phosphorous, and carbon in particulate silicon.

Abstract: A self-clamping holder capable of holding a polysilicon rod using the weight of the polysilicon rod is disclosed. The holder includes a generally cup-shaped adapter having an open end facing downward, and at least three clamp jaws rotatably mounted on the adapter adjacent to the open end and circumferentially spaced at equal angular intervals for clamping or gripping an end of the polysilicon rod received in the adapter. The clamp jaws have arcuate cam surfaces disposed interiorly of the adapter and profiled such that a radius of curvature of the cam surfaces gradually increases as the clamp jaws turn in a downward direction of the adapter. With this construction, the polysilicon rod is firmly gripped by the clamp jaws against detachment from the holder. The clamp jaws produces a clamping force acting on the peripheral surface of the polysilicon rod and distributed uniformly in the circumferential direction of the polysilicon rod.

Abstract: A method of manufacturing a superconductor by applying a floating zone method to a raw material sintered ingot. This method is adapted to obtain an elongated superconductor which can provide high critical current density. A floating zone is moved along the raw material sintered ingot with such speed difference that the speed in its forward end portion is higher than that in its rear end portion, thereby to obtain a superconductor having a smaller diameter. In order to attain a higher crystal orientation property, it is preferable to select the product of the diameter (D mm) of a superconductor provided with a crystal orientation property, which is produced after passage of the floating zone, and the speed (V mm/h) for moving the floating zone in a range of 0.5.ltoreq.DV.ltoreq.20 and to select pressure P of an atmosphere encircling the floating zone in a range of 0<P.ltoreq.3 [kgf/cm.sup.2 ] as well as to pass the floating zone along the raw material sintered ingot at least twice.

Abstract: A single crystal of a compound comprises which easily decomposes at a temperature around the melting point and evaporates at least a part of the compound having a volume of 5 cc or more and a composition deviation of respective elements from the stoichiometric composition of the compound being within the range of .+-.5% in terms of weight ratio.

Abstract: A process for producing Bi-based oxide superconductor single crystals by the floating zone method is disclosed, which comprises using a feed rod of an oxide comprising a formulation of metallic elements represented by the following general formula:Bi.sub.p Sr.sub.q Ca.sub.r Cu.sub.2 O.sub.ywherein2.00< p< 2.18, 1.87< q< 2.00, 0.9.ltoreq. r.ltoreq. 1.0,and y is a positive number, in a moving rate of said rod of from 0.1 to 0.35 mm per hour in the side where crystals are accumulated, in which preferably, in the initial stage of the formation of crystals, the diameters of the rod-like crystals to be accumulated are changed in the wavelike state, and more preferably, in the middle stage of the subsequent formation of crystals, the amount of change thereof is gradually decreased.

Abstract: A apparatus for manufacturing crystals through a floating zone method which includes: structure for forming a heat-melt zone so as to be held at an upper portion of a solid crystal; a barrier enclosure having an opening a lower end portion and provided in the vicinity of an upper surface of the heat-melt zone; structure for supplying a raw material granular crystal into the barrier enclosure; and structure for moving the solid crystal and the heat-melt zone forming structure relative to each other to thereby bring about crystal growth, wherein the barrier enclosure has a bottom surface being flat or inclined toward the center of the barrier enclosure, and wherein the opening is constituted by at least one hole formed in the bottom surface of the barrier enclosure.