Excess Component Or Non-product Appearing Component Contains A Metal Atom Patents (Class 117/67)
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Publication number: 20150128847Abstract: An objective of the present invention is to provide a high-quality SiC single crystal in which the threading dislocation density including screw dislocation, edge dislocation and micropipe defect is reduced, and a method for producing such SiC single crystal according to a solution technique. The method for producing the SiC single crystal according to a solution technique which involves bringing an SiC seed crystal into contact with an Si—C solution having a temperature gradient in which the temperature is lower towards the surface from the inner part and growing an SiC single crystal comprises setting the temperature gradient of the surface region of the Si—C solution to 10° C.Type: ApplicationFiled: April 5, 2013Publication date: May 14, 2015Applicant: TOYOTA JIDOSHA KABUSHIKI KAISHAInventor: Katsunori Danno
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Patent number: 8945302Abstract: Method for crystal growth from a surfactant of a metal-nonmetal (MN) compound, including the procedures of providing a seed crystal, introducing atoms of a first metal to the seed crystal thus forming a thin liquid metal wetting layer on a surface of the seed crystal, setting a temperature of the seed crystal below a minimal temperature required for dissolving MN molecules in the wetting layer and above a melting point of the first metal, each one of the MN molecules being formed from an atom of a second metal and an atom of a first nonmetal, introducing the MN molecules which form an MN surfactant monolayer, thereby facilitating a formation of the wetting layer between the MN surfactant monolayer and the surface of the seed crystal, and regulating a thickness of the wetting layer, thereby growing an epitaxial layer of the MN compound on the seed crystal.Type: GrantFiled: March 4, 2012Date of Patent: February 3, 2015Assignee: Mosaic Crystals Ltd.Inventor: Moshe Einav
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Patent number: 8940095Abstract: An apparatus for growth of uniform multi-component single crystals is provided. The single crystal material has at least three elements and has a diameter of at least 50 mm, a dislocation density of less than 100 cm?2 and a radial compositional variation of less than 1%.Type: GrantFiled: November 4, 2011Date of Patent: January 27, 2015Assignee: Rensselaer Polytechnic InstituteInventor: Partha Dutta
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Patent number: 8815011Abstract: The present invention relates to a magnetic garnet single crystal prepared by the liquid phase epitaxial (LPE) process and an optical element using the same as well as a method of producing the single crystal, for the purpose of providing a magnetic garnet single crystal at a reduced Pb content and an optical element using the same, as well as a method of producing the single crystal. The magnetic garnet single crystal is grown by the liquid phase epitaxial process and is represented by the chemical formula BixNayPbzM13-x-y-zFe5-wM2wO12 (M1 is at least one element selected from Y, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu; and M2 is at least one element selected from Ga, Al, In, Ti, Ge, Si and Pt, provided that 0.5<x?2.0, 0<y?0.8, 0?z<0.01, 0.19?3-x-y-z<2.5, and 0?w?1.6).Type: GrantFiled: August 27, 2010Date of Patent: August 26, 2014Assignee: TDK CorporationInventor: Atsushi Ohido
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Patent number: 8702864Abstract: In a method for growing a silicon carbide single crystal on a silicon carbide single crystal substrate by contacting the substrate with a solution containing C prepared by dissolving C into the melt that contains Cr and X, which consists of at least one element of Ce and Nd, such that a proportion of Cr in a whole composition of the melt is in a range of 30 to 70 at. %, and a proportion of X in the whole composition of the melt is in a range of 0.5 at. % to 20 at. % in the case where X is Ce, or in a range of 1 at. % to 25 at. % in the case where X is Nd, and the silicon carbide single crystal is grown from the solution.Type: GrantFiled: January 14, 2009Date of Patent: April 22, 2014Assignee: Toyota Jidosha Kabushiki KaishaInventors: Yukio Terashima, Yasuyuki Fujiwara
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Patent number: 8685163Abstract: A method for growing a silicon carbide single crystal on a single crystal substrate comprising the steps of heating silicon in a graphite crucible to form a melt, bringing a silicon carbide single crystal substrate into contact with the melt, and depositing and growing a silicon carbide single crystal from the melt, wherein the melt comprises 30 to 70 percent by atom, based on the total atoms of the melt, of chromium and 1 to 25 percent by atom, based on the total atoms of the melt, of X, where X is at least one selected from the group consisting of nickel and cobalt, and carbon. It is possible to improve morphology of a surface of the crystal growth layer obtained by a solution method.Type: GrantFiled: November 18, 2008Date of Patent: April 1, 2014Assignee: Toyota Jidosha Kabushiki KaishaInventors: Yukio Terashima, Yasuyuki Fujiwara
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Patent number: 8287644Abstract: In a method for growing a silicon carbide single crystal on a silicon carbide single crystal substrate by contacting the substrate with a solution containing C by dissolving C into the melt that contains Si, Cr and X, which consists of at least one element of Sn, In and Ga, such that the proportion of Cr in the whole composition of the melt is in a range of 30 to 70 at. %, and the proportion of X is in a range of 1 to 25 at. %, and the silicon carbide crystal is grown from the solution.Type: GrantFiled: January 14, 2009Date of Patent: October 16, 2012Assignee: Toyota Jidosha Kabushiki KaishaInventors: Yukio Terashima, Yasuyuki Fujiwara
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Publication number: 20120211769Abstract: A SiC single crystal wafer on which a good quality epitaxial film by suppressing defects derived from the wafer can be grown has an affected surface layer with a thickness of at most 50 nm and a SiC single crystal portion with an oxygen content of at most 1.0×1017 atoms/cm3. This SiC single crystal wafer is manufactured from a high purity SiC bulk single crystal obtained by the solution growth method using raw materials with an oxygen content of at most 100 ppm and a non-oxidizing atmosphere having an oxygen concentration of at most 100 ppm.Type: ApplicationFiled: February 27, 2012Publication date: August 23, 2012Applicant: SUMITOMO METAL INDUSTRIES, LTD.Inventors: Kazuhiko Kusunoki, Kazuhito Kamei, Nobuyoshi Yashiro, Junichi Koike
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Publication number: 20120017825Abstract: A method for growing a crystalline composition, the first crystalline composition may include gallium and nitrogen. The crystalline composition may have an infrared absorption peak at about 3175 cm?1, with an absorbance per unit thickness of greater than about 0.01 cm?1. In one embodiment, the composition ay have an amount of oxygen present in a concentration of less than about 3×1018 per cubic centimeter, and may be free of two-dimensional planar boundary defects in a determined volume of the first crystalline composition.Type: ApplicationFiled: November 9, 2006Publication date: January 26, 2012Applicant: General Electric CompanyInventors: Mark Philip D'Evelyn, Kristi Jean Narang, Dong-Sil Park, Huicong Hong, Xian-An Cao, Larry Qiang Zeng
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Patent number: 8088220Abstract: In accordance with various embodiments, crystalline structures are formed by providing, at a growth temperature, a liquid comprising AlN and having a quality factor greater than approximately 0.14 and forming solid AlN from the liquid, the growth temperature being lower than the melting point of AlN.Type: GrantFiled: May 23, 2008Date of Patent: January 3, 2012Assignee: Crystal IS, Inc.Inventors: Glen A. Slack, Sandra B. Schujman
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Publication number: 20110274609Abstract: A group 13 nitride crystal substrate according to the present invention is produced by growing a group 13 nitride crystal on a seed-crystal substrate by a flux method, wherein a content of inclusions in the group 13 nitride crystal grown in a region of the seed-crystal substrate except for a circumferential portion of the seed-crystal substrate, the region having an area fraction of 70% relative to an entire area of the seed-crystal substrate, is 10% or less, preferably 2% or less.Type: ApplicationFiled: July 15, 2011Publication date: November 10, 2011Applicant: NGK Insulators, Ltd.Inventors: Takanao Shimodaira, Katsuhiro Imai, Makoto Iwai, Takayuki Hirao
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Publication number: 20110200833Abstract: A method capable of stably manufacturing a SiC single crystal in the form of a thin film or a bulk crystal having a low carrier density of at most 5×1017/cm3 and preferably less than 1×1017/cm3 and which is suitable for use in various devices by liquid phase growth using a SiC solution in which the solvent is a melt of a Si alloy employs a Si alloy having a composition which is expressed by SixCryTiz wherein x, y, and z (each in atomic percent) satisfy 0.50<x<0.68, 0.08<y<0.35, and 0.08<z<0.35, or??(1) 0.40<x?0.50, 0.15<y<0.40, and 0.15<z<0.35.??(2) x, y, and z preferably satisfy 0.53<x<0.65, 0.1<y<0.3, and 0.1<z<0.3.Type: ApplicationFiled: February 28, 2011Publication date: August 18, 2011Applicant: SUMITOMO METAL INDUSTRIES, LTD.Inventors: Kazuhito KAMEI, Kazuhiko Kusunoki, Nobuyoshi Yashiro, Akihiro Yauchi, Shinji Shimosaki
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Patent number: 5664366Abstract: A shipping container for sea worms contains a fibrous bed of vegetable matter which is degraded by fermentation. The bed is both wetted and seeded with a microorganism in order to insure the fermentation.Type: GrantFiled: April 15, 1994Date of Patent: September 9, 1997Inventors: Michel Lopuszanski, Daniel Lopuszanski
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Patent number: 5544616Abstract: A liquid phase epitaxy method for forming thin crystalline layers of device quality silicon having less than 3.times.10.sup.16 Cu atoms/cc impurity, comprising: preparing a saturated liquid solution of Si in a Cu/Al solvent at about 20 to about 40 at. % Si at a temperature range of about 850.degree. to about 1100.degree. C. in an inert gas; immersing or partially immersing a substrate in the saturated liquid solution; super saturating the solution by lowering the temperature of the saturated solution; holding the substrate in the saturated solution for a period of time sufficient to cause Si to precipitate out of solution and form a crystalline layer of Si on the substrate; and withdrawing the substrate from the solution.Type: GrantFiled: May 27, 1994Date of Patent: August 13, 1996Assignee: Midwest Research InstituteInventors: Theodore F. Ciszek, Tihu Wang
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Patent number: 5517942Abstract: A process for producing optoelectric articles, in which an optoelectric single crystal film is formed on an optoelectric single crystal substrate, is disclosed. The optoelectric single crystal substrate is exposed to a liquid phase in a supercooling state of a melt including a solute and a melting medium, and the optoelectric single crystal film is formed by a liquid phase epitaxial process. In this case, a viscosity of the liquid phase is set to 75%.about.95% preferably 75%.about.90% with respect to a viscosity at which a degree of supercooling of the liquid phase is zero.Type: GrantFiled: March 22, 1995Date of Patent: May 21, 1996Assignee: NGK Insulators, Ltd.Inventors: Tsuguo Fukuda, Yasunori Okano, Tatsuo Kawaguchi, Minoru Imaeda
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Patent number: 5500390Abstract: A method for controlling the Si concentration in a GaP single crystal layer grown in a series of runs of GaP liquid phase epitaxial growth with the repeated use of one and the same Ga solution, which comprise the steps of: measuring the Si concentrations of the GaP single crystal layers in preceding runs; then determining the additional Si amounts to be added into the Ga solution to refresh the Si effective concentration therein in reference to the Si concentrations in the layers; and adding Si of the thus determined amount into the Ga solution to commence the subsequent run, wherein the Si concentration in each of the GaP liquid phase epitaxial growth layers is determined from measurement of the O/G ratio in the layer, which is computed from each pair of the both values of the photoluminescent spectral peak intensity around the wavelength of 6300 .ANG. (O component) as the numerator and the other photoluminescent spectral peak intensity around the wavelength of 5540 .ANG.Type: GrantFiled: June 1, 1995Date of Patent: March 19, 1996Assignee: Shin-Etsu Handatoi Co., Ltd.Inventors: Munehisa Yanagisawa, Yuki Tamura, Norihide Kokubu