Abstract: Core-shell nanostructures with platinum overlayers conformally coating palladium nano-substrate cores and facile solution-based methods for the preparation of such core-shell nanostructures are described herein. The obtained Pd@Pt core-shell nanocatalysts showed enhanced specific and mass activities towards oxygen reduction, compared to a commercial Pt/C catalyst.

Abstract: Methods of making electrically conductive, doped zinc oxide nanowires and nanowire films are provided. The methods comprises the steps of forming an aqueous solution comprising a dopant-containing precursor salt, a zinc-containing precursor salt and a pH buffering agent and heating the aqueous solution to a temperature below its boiling point in the presence of seed crystals, whereby doped zinc oxide nanowires are grown in situ from the seed crystals in the aqueous solution.

Abstract: The present subject matter relates to a micromechanical component having a top face and a bottom face and at least two side faces, and a coating of diamond and/or diamond-like carbon (DLC) which encompasses all the surfaces of the component, wherein on at least one side face, across at least a part of said side face, the coating has a smaller coating thickness than that of the top face and/or bottom face, so that a reinforced area in reference to the at least one side face is produced.

Abstract: A film 3 of a nitride of a group 13 element is grown on a seed crystal substrate 11 by flux process from a melt containing a flux and the group 13 element under nitrogen containing atmosphere. The film 3 of the nitride of the group 13 element includes an inclusion distributed layer 3a in a region distant from an interface 11a of the film 3 of the nitride of the group 13 element on the side of the seed crystal substrate 11 and containing inclusions derived from components of the melt, and an inclusion depleted layer 3b, with the inclusion depleted. provided on the layer 3a. Laser light A is irradiated from the side of the back face 1b of the seed crystal substrate 11 to peel the single crystal 3 of the nitride of the group 13 element from the seed crystal substrate 11 by laser lift-off method.

Abstract: Provided are a method for preparing a thin film or a thick film, including: a first step of providing a porous substrate capable of supplying silicon; a second step of applying zeolite seed crystals onto the surface of the porous substrate; a third step of coating the seed crystals-applied porous substrate with an aqueous solution containing a structure-directing agent; and a fourth step of forming and growing a film from the seed crystals by the secondary growth above a temperature at which moisture inside the seed crystals-applied porous substrate prepared in the third step can form steam, and a film prepared by the method. The film manufacturing method of the present invention is a simple manufacturing process, and thus has high reproducibility and high throughput. Since a synthetic gel is not used and a solution is used, the unnecessary consumption of materials, environmental pollution, and waste of a synthetic gel can be prevented while not necessitating drying and washing of a film.

Abstract: Method for crystal growth from a surfactant of a metal-nonmetal (MN) compound, including the procedures of providing a seed crystal, introducing atoms of a first metal to the seed crystal thus forming a thin liquid metal wetting layer on a surface of the seed crystal, setting a temperature of the seed crystal below a minimal temperature required for dissolving MN molecules in the wetting layer and above a melting point of the first metal, each one of the MN molecules being formed from an atom of a second metal and an atom of a first nonmetal, introducing the MN molecules which form an MN surfactant monolayer, thereby facilitating a formation of the wetting layer between the MN surfactant monolayer and the surface of the seed crystal, and regulating a thickness of the wetting layer, thereby growing an epitaxial layer of the MN compound on the seed crystal.

Abstract: A method for synthesizing ZnO, comprising continuously circulating a growth solution that is saturated with ZnO between a warmer deposition zone, which contains a substrate or seed, and a cooler dissolution zone, which is contains ZnO source material.

Abstract: When a group III nitride crystal is grown in a pressurized atmosphere of a nitrogen-containing gas from a melt 50 including at least a group III element, nitrogen and an alkali metal or an alkali earth metal, a melt-holding vessel 160 that holds the above-described melt 50 is swung about two axes different in direction from each other such as an X-axis and a Y-axis.

Abstract: It is provided a method of producing a crystal of a nitride of a group 13 element in a melt by flux method. The melt is generated by heating a composition including a material for the group 13 element, a material for at least one of an alkali metal and an alkaline earth metal and a liquid material for germanium. Upon producing a crystal of a nitride of a group 13 element in a melt by flux method, it is thereby possible to reduce in-plane distribution of a property such as carrier density of the thus obtained crystal of a nitride of a group 13 element.

Abstract: The present invention relates to a zinc oxide-cellulose nanocomposite made of cellulose and zinc oxide nanoparticles and to a preparation method thereof. The nanocomposite of the present invention is prepared by producing zinc oxide nanoparticles as seeds on the surface and/or inside of a cellulose film and growing the seeds into zinc oxide crystals to form a zinc oxide layer strongly attached to the cellulose film. The nanocomposite of the present invention has significantly improved piezoelectricity compared to simple cellulose piezoelectric paper and may be used for LEDs and photovoltaic power generation devices thanks to zinc oxide doped therein.

Abstract: The present invention concerns a method of forming, by liquid phase epitaxial growth, on the surface of a plurality of substrates, a layer of crystallised silicon having a grain size greater than or equal to 200 ?m, comprising at least the steps consisting of: (i) arranging a liquid bath formed from a liquid metal solvent phase in which liquid silicon is homogeneously dispersed; (ii) immersing, in the bath of step (i), said substrates (1), in such a way that each of the surfaces of the substrates (1) that need to be coated is in contact with the liquid bath, said surfaces being arranged parallel to one another, and perpendicularly to the interface (3) of the liquid bath (2) and the gas atmosphere (4) contiguous to said liquid bath or according to an inclination angle of at least 45° in relation to said interface (3); (iii) imposing, on the whole of step (ii), conditions conducive to the vaporisation of said liquid solvent phase and to the establishing of a natural convection movement of the liquid bath in the

Abstract: The present invention relates to a magnetic garnet single crystal prepared by the liquid phase epitaxial (LPE) process and an optical element using the same as well as a method of producing the single crystal, for the purpose of providing a magnetic garnet single crystal at a reduced Pb content and an optical element using the same, as well as a method of producing the single crystal. The magnetic garnet single crystal is grown by the liquid phase epitaxial process and is represented by the chemical formula BixNayPbzM13-x-y-zFe5-wM2wO12 (M1 is at least one element selected from Y, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu; and M2 is at least one element selected from Ga, Al, In, Ti, Ge, Si and Pt, provided that 0.5<x?2.0, 0<y?0.8, 0?z<0.01, 0.19?3-x-y-z<2.5, and 0?w?1.6).

Abstract: To grow a gallium nitride crystal, a seed-crystal substrate is first immersed in a melt mixture containing gallium and sodium. Then, a gallium nitride crystal is grown on the seed-crystal substrate under heating the melt mixture in a pressurized atmosphere containing nitrogen gas and not containing oxygen. At this time, the gallium nitride crystal is grown on the seed-crystal substrate under a first stirring condition of stirring the melt mixture, the first stirring condition being set for providing a rough growth surface, and the gallium nitride crystal is subsequently grown on the seed-crystal substrate under a second stirring condition of stirring the melt mixture, the second stirring condition being set for providing a smooth growth surface.

Abstract: In a method for growing a silicon carbide single crystal on a silicon carbide single crystal substrate by contacting the substrate with a solution containing C prepared by dissolving C into the melt that contains Cr and X, which consists of at least one element of Ce and Nd, such that a proportion of Cr in a whole composition of the melt is in a range of 30 to 70 at. %, and a proportion of X in the whole composition of the melt is in a range of 0.5 at. % to 20 at. % in the case where X is Ce, or in a range of 1 at. % to 25 at. % in the case where X is Nd, and the silicon carbide single crystal is grown from the solution.

Abstract: Thin films of ferroelectric material with a high mole fraction of Pb(A2+1/3B5+2/3)O3 substantially in a perovskite phase, wherein A is zinc or a combination of zinc and magnesium, and B is a valence 5 element such as niobium or tantalum, have been prepared. Typically, the mole fraction of Pb(A2+1/3B5+2/3)O3 in the ferroelectric material is >0.7. The method for preparing the thin films of ferroelectric material comprises providing a precursor solution containing lead, A2+, and B5+; modifying the precursor solution by addition of a polymer species thereto; applying the modified precursor solution to a surface of a substrate and forming a coating thereon; and (d) subjecting the coating to a heat treatment and forming the film in the perovskite phase. Optimal results have been obtained with PEG200 as the polymer species.

Abstract: A method for growing a silicon carbide single crystal on a single crystal substrate comprising the steps of heating silicon in a graphite crucible to form a melt, bringing a silicon carbide single crystal substrate into contact with the melt, and depositing and growing a silicon carbide single crystal from the melt, wherein the melt comprises 30 to 70 percent by atom, based on the total atoms of the melt, of chromium and 1 to 25 percent by atom, based on the total atoms of the melt, of X, where X is at least one selected from the group consisting of nickel and cobalt, and carbon. It is possible to improve morphology of a surface of the crystal growth layer obtained by a solution method.

Abstract: A method for synthesizing ZnO, comprising continuously circulating a growth solution that is saturated with ZnO between a warmer deposition zone, which contains a substrate or seed, and a cooler dissolution zone, which is contains ZnO source material.

Abstract: A method for synthesizing ZnO, comprising continuously circulating a growth solution that is saturated with ZnO between a warmer deposition zone, which contains a substrate or seed, and a cooler dissolution zone, which is contains ZnO source material.

Abstract: A structured substrate is described which is suitable for forming and hosting a crystal array, as well as associated methods for making and using such a structured substrate. The structured substrate is made by injection molding and has on one side a combination of macro- and micro-structured features. Each macro-structured feature comprises an edge that forms a perimeter around an enclosed area containing a large number of the micro-structured features. When a droplet of a solution containing molecules of interest and a solvent is deposited onto one of the enclosed areas such that it extends somewhat beyond the perimeter, the droplet slowly dries and shrinks through evaporation of the solvent, during which the edge acts to seed crystallization of the molecules, and the micro-structured features act to direct crystal growth from the seed into the enclosed area. The crystal thus forms over the whole of the enclosed area in a shape that conforms to the perimeter.

Abstract: A composition of graphene-based nanomaterials and a method of preparing the composition are provided. A carbon-based precursor is dissolved in water to form a precursor suspension. The precursor suspension is placed onto a substrate, thereby forming a precursor assembly. The precursor assembly is annealed, thereby forming the graphene-based nanomaterials. The graphene-based nanomaterials are crystallographically ordered at least in part and configured to form a plurality of diffraction rings when probed by an incident electron beam. In one aspect, the graphene-based nanomaterials are semiconducting. In one aspect, a method of engineering an energy bandgap of graphene monoxide generally includes providing at least one atomic layer of graphene monoxide having a first energy bandgap, and applying a substantially planar strain is applied to the graphene monoxide, thereby tuning the first energy band gap to a second energy bandgap.

Abstract: To provide a production method for a nitride crystal, where a nitride crystal can be prevented from precipitating in a portion other than on a seed crystal and the production efficiency of a gallium nitride single crystal grown on the seed crystal can be enhanced. In a method for producing a nitride crystal by an ammonothermal method in a vessel containing a mineralizer-containing solution, out of the surfaces of said vessel and a member provided in said vessel, at least a part of the portion coming into contact with said solution is constituted by a metal or alloy containing one or more atoms selected from the group consisting of tantalum (Ta), tungsten (W) and titanium (Ti), and has a surface roughness (Ra) of less than 1.80 ?m.

Abstract: A semiconductor crystal is produced through crystal growth in the presence of a solvent in a supercritical and/or subcritical state in a reactor, wherein at least a part of the surface of the reactor and the surface of the member to be used inside the reactor is coated with a platinum group-Group 13 metal alloy coating film.

Abstract: The present invention provides a method for preparing a thin or thick film, comprising the steps of: (1) arranging non-spherical seed crystals on a substrate such that all the a-, b- and c-axes of each seed crystal are oriented under a predetermined rule; and (2) forming and growing the film from the seed crystals through secondary growth by exposing the arranged seed crystals of step (1) to a seed crystal growth solution. The invention also provides a film prepared by the method. According to the invention, crystals or films larger than the seed crystals can be prepared.

Abstract: An object of the present invention is to effectively add Ge in the production of GaN through the Na flux method. In a crucible, a seed crystal substrate is placed such that one end of the substrate remains on the support base, whereby the seed crystal substrate remains tilted with respect to the bottom surface of the crucible, and gallium solid and germanium solid are placed in the space between the seed crystal substrate and the bottom surface of the crucible. Then, sodium solid is placed on the seed crystal substrate. Through employment of this arrangement, when a GaN crystal is grown on the seed crystal substrate through the Na flux method, germanium is dissolved in molten gallium before formation of a sodium-germanium alloy. Thus, the GaN crystal can be effectively doped with Ge.

Abstract: Provided is a method for producing inexpensive and high-quality aluminum nitride crystals. Gas containing N atoms is introduced into a melt of a Ga—Al alloy, whereby aluminum nitride crystals are made to epitaxially grow on a seed crystal substrate in the melt of the Ga—Al alloy. A growth temperature of aluminum nitride crystals is set at not less than 1000 degrees C. and not more than 1500 degrees C., thereby allowing GaN to be decomposed into Ga metal and nitrogen gas.

Abstract: To grow a gallium nitride crystal, a seed-crystal substrate is first immersed in a melt mixture containing gallium and sodium. Then, a gallium nitride crystal is grown on the seed-crystal substrate under heating the melt mixture in a pressurized atmosphere containing nitrogen gas and not containing oxygen. At this time, the gallium nitride crystal is grown on the seed-crystal substrate under a first stirring condition of stirring the melt mixture, the first stirring condition being set for providing a rough growth surface, and the gallium nitride crystal is subsequently grown on the seed-crystal substrate under a second stirring condition of stirring the melt mixture, the second stirring condition being set for providing a smooth growth surface.

Abstract: A method for manufacturing a group III nitride crystal on a seed crystal in a holding vessel holding therein a melt containing a group III metal, an alkali metal and nitrogen. The manufacturing method comprises the steps of causing the seed crystal to make a contact with the melt, setting an environment of the seed crystal to a first state offset from a crystal growth condition while in a state in which said seed crystal is in contact with the melt, increasing a nitrogen concentration in the melt, and setting the environment of the seed crystal to a second state suitable for crystal growth when the nitrogen concentration of the melt has reached a concentration suitable for growing the seed crystal.

Abstract: Provided is a Bi-substituted rare earth iron garnet single crystal which has a composition of R3-xBixFe5-wAwO12, wherein R denotes one or more rare earth elements among Y, Eu, Gd, Ho, Yb, Lu, Nd, Tm, La, Sm, Dy, Er, Ce, and Pr while definitely including Gd, A denotes one or more elements among Ga, Al, In, Sc, Co, Ni, Cr, V, Ti, Si, Ge, Mg, Zn, Nb, Ta, Sn, Zr, Hf, Pt, Rh, Te, Os, Ce, and Lu, 0.7<x?1.5, and 0<w?1.5, does not contain Pb and contains Pt, and additionally contains M which denotes Mn or at least one Group 2 element, wherein a coefficient ? is set to any value within a numerical range of 0.815±0.035 and ? (which means (?×[M])?[Pt]) is set from ?0.40 atppm to 3.18 atppm.

Abstract: A gallium nitride crystal having a hexagonal crystal structure, wherein a full width at half maximum (FWHM) of X-ray rocking curve in a region at a side of one edge in a c-axis direction is smaller than the FWHM in a region at a side of the other edge in the c-axis direction, in at least one of m-plane outer peripheral surfaces of the hexagonal crystal structure.

Abstract: The present invention refers to obtaining a solution of metal-organic precursors with a maximum fluorine content of 10% using the solution previously described in patent ES2259919 B1 as the starting point. This modification enables carrying out the thermal treatment of superconducting decomposition layers (pyrolysis) and crystal growth in a single stage. In addition, the low fluorine content reduces the risks of toxicity and corrosion.

Abstract: A large sized bulk crystal is produced which allows to cut out a practical size of crystal substrate. The gallium nitride crystal has features in which a length L of c-axis is 9 mm or more, a crystal diameter d of a cross section orthogonal to the c-axis is 100 ?m, and a ratio L/d of the length L of the c-axis and the crystal diameter d of the cross section orthogonal to the c-axis is 7 or more. By enlarging this elongated needle-like crystal, a bulk crystal with a large volume can be produced, and a large sized bulk crystal can be produced which allows to cut out a practical size of crystal substrate.

Abstract: A group III nitride crystal containing therein an alkali metal element comprises a base body, a first group III nitride crystal formed such that at least a part thereof makes a contact with the base body, the first group III nitride crystal deflecting threading dislocations in a direction different from a direction of crystal growth from the base body and a second nitride crystal formed adjacent to the first group III nitride crystal, the second nitride crystal having a crystal growth surface generally perpendicular to the direction of the crystal growth.

Abstract: In a method for growing a silicon carbide single crystal on a silicon carbide single crystal substrate by contacting the substrate with a solution containing C by dissolving C into the melt that contains Si, Cr and X, which consists of at least one element of Sn, In and Ga, such that the proportion of Cr in the whole composition of the melt is in a range of 30 to 70 at. %, and the proportion of X is in a range of 1 to 25 at. %, and the silicon carbide crystal is grown from the solution.

Abstract: A method of producing a lasing microsource of colloidal nanocrystals. The method includes the steps of preparing a nanocrystal solution in a solvent; depositing at least a drop of the nanocrystals solution with a drop volume below 1 nl on a flat substrate; and evaporating the solvent to dryness thereby to obtain at the edge of the evaporated drop a single annular stripe including a domain wherein the nanocrystals are arranged in an ordered array, wherein the ordered nanocrystals in the domain constitute an active region capable of lasing and the radially inner and outer edges of the stripe define a resonant cavity in which the active region is inserted.

Abstract: An object of the present invention is to obtain, with respect to a semiconductor light-emitting element using a group III nitride semiconductor substrate, a semiconductor light-emitting element having an excellent light extraction property by selecting a specific substrate dopant and controlling the concentration thereof. The semiconductor light-emitting element comprises a substrate composed of a group III nitride semiconductor comprising germanium (Ge) as a dopant, an n-type semiconductor layer composed of a group III nitride semiconductor formed on the substrate, an active layer composed of a group III nitride semiconductor formed on the n-type semiconductor layer, and a p-type semiconductor layer composed of a group III nitride semiconductor formed on the active layer in which the substrate has a germanium (Ge) concentration of 2×1017 to 2×1019 cm?3.

Abstract: A semiconductor crystal is produced through crystal growth in the presence of a solvent in a supercritical and/or subcritical state in a reactor, wherein at least a part of the surface of the reactor and the surface of the member to be used inside the reactor is coated with a platinum group-Group 13 metal alloy coating film.

Abstract: The present invention generally relates to compositions, methods, and systems relating to controlled crystallization and/or nucleation of a molecular species. In some embodiments, the crystallization and/or nucleation of the molecular species may be controlled by tuning the surface chemistry and/or the morphology of a crystallization substrate. In some embodiments, the molecular species is a small organic molecule (e.g., pharmaceutically active agent).

Abstract: Freestanding III-nitride single-crystal substrates whose average dislocation density is not greater than 5×105 cm?2 and that are fracture resistant, and a method of manufacturing semiconductor devices utilizing such freestanding III-nitride single-crystal substrates are made available. The freestanding III-nitride single-crystal substrate includes one or more high-dislocation-density regions (20h), and a plurality of low-dislocation-density regions (20k) in which the dislocation density is lower than that of the high-dislocation-density regions (20h), wherein the average dislocation density is not greater than 5×105 cm?2. Herein, the ratio of the dislocation density of the high-dislocation-density region(s) (20h) to the average dislocation density is sufficiently large to check the propagation of cracks in the substrate. And the semiconductor device manufacturing method utilizes the freestanding III-nitride single crystal substrate (20p).

Abstract: Provided are a multilayer ZnO single crystal scintillator wherein the light emitting quantity is increased, and a method for manufacturing such scintillator. A multilayer body composed of ZnO semiconductor layers having different band gaps is manufactured, and a layer having a small band gap is made to have a thickness that permits ionization radiation, such as ? rays and electronic rays, to enter the layer, thereby the light emitting quantity of the multilayer ZnO single crystal scintillator is greatly increased.

Abstract: Palladium-seeded, dendritic platinum nanostructures that are useful as electrocatalysts and methods for preparing such nanostructures. The palladium-platinum nanostructures may be incorporated into fuel cell electrodes including fuel cells that include a proton exchange membrane (PEM).

Abstract: A method for growing a crystalline composition, the first crystalline composition may include gallium and nitrogen. The crystalline composition may have an infrared absorption peak at about 3175 cm?1, with an absorbance per unit thickness of greater than about 0.01 cm?1. In one embodiment, the composition ay have an amount of oxygen present in a concentration of less than about 3×1018 per cubic centimeter, and may be free of two-dimensional planar boundary defects in a determined volume of the first crystalline composition.

Abstract: To grow a gallium nitride crystal, a seed-crystal substrate is first immersed in a melt mixture containing gallium and sodium. Then, a gallium nitride crystal is grown on the seed-crystal substrate under heating the melt mixture in a pressurized atmosphere containing nitrogen gas and not containing oxygen. At this time, the gallium nitride crystal is grown on the seed-crystal substrate under a first stirring condition of stirring the melt mixture, the first stirring condition being set for providing a rough growth surface, and the gallium nitride crystal is subsequently grown on the seed-crystal substrate under a second stirring condition of stirring the melt mixture, the second stirring condition being set for providing a smooth growth surface.

Abstract: A nitride crystal which encircles an outer periphery of a seed crystal, the nitride crystal in an embodiment includes: a first partial region, and a second partial region that has optical characteristics different from those of the first partial region and has optical characteristics which indicate the crystal orientation.

Abstract: In accordance with various embodiments, crystalline structures are formed by providing, at a growth temperature, a liquid comprising AlN and having a quality factor greater than approximately 0.14 and forming solid AlN from the liquid, the growth temperature being lower than the melting point of AlN.

Abstract: A method to improve the crystal purity of a group-I11 nitride crystal grown in an ammonothermal growth system by removing any undesired material (i.e., impurities) from within the system prior to, in-between, or after the growth steps for the group-I11 nitride crystal. Impurities are removed from the ammonothermal growth system by first bringing the impurities into solution and then removing part or all of the solution from the growth system. The result is a high purity group-I11 nitride crystal grown in the ammonothermal growth system.

Abstract: A group 13 nitride crystal substrate according to the present invention is produced by growing a group 13 nitride crystal on a seed-crystal substrate by a flux method, wherein a content of inclusions in the group 13 nitride crystal grown in a region of the seed-crystal substrate except for a circumferential portion of the seed-crystal substrate, the region having an area fraction of 70% relative to an entire area of the seed-crystal substrate, is 10% or less, preferably 2% or less.

Abstract: A method for rapidly synthesizing polycrystalline diamond, includes the steps of machining a large monolithic graphite piece, placing the starting graphite piece in direct contact with an activator piece composed of a nickel-base alloy, and subjecting the contacting pieces to high static pressure and high temperature for a time sufficient to cause the starting monolithic graphite piece to undergo complete transformation into diamond to yield monolithic polycrystalline diamond.

Abstract: Reactor designs for use in ammonothermal growth of group-III nitride crystals envision a different relative placement of source materials and seed crystals with respect to each other, and with respect to the vessel containing a solvent. This placement results in a difference in fluid dynamical flow patterns within the vessel.

Abstract: Affords a Group-III nitride crystal substrate that is of low dislocation density and is inexpensive to manufacture, a method of manufacturing such a substrate, and Group-III nitride semiconductor devices that incorporate the Group-III nitride crystal substrate. The Group-III nitride crystal substrate manufacturing method includes: a step of growing, by liquid-phase epitaxy, a first Group-III nitride crystal (2) onto a base substrate (1); and a step of growing, by vapor-phase epitaxy, a second Group-III nitride crystal (3) onto the first Group-III nitride crystal (2). The Group-III nitride crystal substrate, produced by such a manufacturing method, has a dislocation density of 1×107 dislocations/cm2.

Abstract: The present invention provides a method for producing a semiconductor substrate, the method including reacting nitrogen (N) with gallium (Ga), aluminum (Al), or indium (In), which are group III elements, in a flux mixture containing a plurality of metal elements selected from among alkali metals and alkaline earth metals, to thereby grow a group III nitride based compound semiconductor crystal. The group III nitride based compound semiconductor crystal is grown while the flux mixture and the group III element are mixed under stirring. At least a portion of a base substrate on which the group III nitride based compound semiconductor crystal is grown is formed of a flux-soluble material, and the flux-soluble material is dissolved in the flux mixture, at a temperature near the growth temperature of the group III nitride based compound semiconductor crystal, during the course of growth of the semiconductor crystal.