Abstract: An ashing device that prevents the ashing rate from changing over time. The ashing device ashes organic material on a substrate including an exposed metal in a processing chamber. The ashing device includes a path, which is formed in the processing chamber and through which active species supplied to the processing chamber pass. The path is defined by a surface on which the metal scattered from the substrate by the active species is collectible, with the surface being formed so as to expose a metal that is of the same kind.

Abstract: A connector assembly configured to join an induction coil to a radio frequency generator to provide together with a plasma torch, an inductively coupled plasma source for a spectrometer is disclosed. The connector assembly includes a radial clamping member associated with the radio frequency generator and a sealing member. The radial clamping member has an internal surface configured to receive an end of an induction coil. The connector assembly is configured to provide a secure connection between the end of the induction coil and the RF generator that is substantially electrically conductive and substantially liquid-tight without causing lasting deformation of the radial clamping member or the induction coil. An inductively coupled plasma spectrometer comprising such a connector assembly and a method for securing a connection between an induction coil and a radio frequency generator are also disclosed.

Abstract: A method of etching exposed silicon oxide on patterned heterogeneous structures is described and includes a remote plasma etch formed from a fluorine-containing precursor. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents combine with a nitrogen-and-hydrogen-containing precursor. Reactants thereby produced etch the patterned heterogeneous structures with high silicon oxide selectivity while the substrate is at high temperature compared to typical Siconi™ processes. The etch proceeds without producing residue on the substrate surface. The methods may be used to remove silicon oxide while removing little or no silicon, polysilicon, silicon nitride or titanium nitride.

Abstract: Oxygen scavenging material embedded in an isolation structure provides improved protection of high dielectric constant (Hi-K) materials from oxygen contamination while avoiding alteration of work function and switching threshold shift in transistors including such Hi-K materials.

Abstract: Embodiments of the device relate to a modular injector (100) for injecting a gas into a processing chamber (42), comprising at least two adjacent injectors (1), each injector comprising an inlet for receiving a gas wave or a gas flow, a flow shaping section (2) having left and right sidewalls that diverge according to a divergence angle relative to a propagation axis of the gas, for expanding the gas in a direction perpendicular to the propagation axis, and an outlet for expelling the gas. The modular injector forms an equivalent large injector having an equivalent large outlet which includes the outlets of the adjacent injectors and expands the gas over the equivalent large outlet.

Abstract: A shaft-equipped heater unit includes a heater plate that heats an object to be heated placed thereon, and a shaft part that supports the heater plate, wherein the shaft part is formed by spraying material powder which constitutes the shaft part on the heater plate at a temperature lower than a melting point of the material powder by heated compressed gas.

Abstract: A chemical vapor deposition apparatus can include a reaction chamber having a reaction space therein; a wafer boat disposed in the reaction space, the wafer boat arranged and structured to support a plurality of wafers; and a gas supplying part disposed in the reaction chamber to supply two or more reaction gases to the plurality of wafers. The gas supplying part can include a plurality of gas pipes disposed in the reaction chamber to supply the two or more reaction gases from outside to the reaction space; and a plurality of supplying pipes disposed around the wafer boat, wherein each of the supplying pipes is connected to two or more corresponding gas pipes, and wherein each supplying pipe is configured to supply the two or more reaction gases supplied by the two or more corresponding gas pipes to a corresponding one of the wafers.

Abstract: A deposition system includes a system housing having a housing interior, a fixture transfer assembly having a generally sloped fixture transfer rail extending through the housing interior, a plurality of processing chambers connected by the fixture transfer rail, a controller interfacing with the processing chambers and at least one fixture carrier assembly carried by the fixture transfer rail and adapted to contain at least one substrate. The fixture carrier assembly travels along the fixture transfer rail under influence of gravity. A deposition method is also disclosed.

Abstract: A source for feeding one or more gaseous precursors onto a surface of a substrate and an arrangement for processing the substrate by way of subjecting the surface of the substrate to alternately repetitive surface reactions of the precursors, the source including a gas feed member for feeding at least one or more precursors onto the surface of the substrate. The gas feed member is adapted rotatable about a rotation axis, the rotation axis being arranged to extend substantially parallel to the surface of the substrate.

Abstract: A plasma tuning rod system is provided with one or more microwave cavities configured to couple electromagnetic (EM) energy in a desired EM wave mode to a plasma by generating resonant microwave energy in one or more plasma tuning rods within and/or adjacent to the plasma. One or more microwave cavity assemblies can be coupled to a process chamber, and can comprise one or more tuning spaces/cavities. Each tuning space/cavity can have one or more plasma tuning rods coupled thereto. The plasma tuning rods can be configured to couple the EM energy from the resonant cavities to the process space within the process chamber and thereby create uniform plasma within the process space.

Abstract: A method for simultaneously ablating and functionalizing a portion of a substrate surface, comprising the following steps: applying a CO2 particle spray against an unreacted portion of the substrate surface; and simultaneously projecting at least one source of ionizing-heating radiation into said CO2 particle spray flowing against said unreacted portion of the substrate surface, thus intersecting and mixing together to form an instantaneous surface treatment composition of ionizing-heating radiation and CO2 particle spray flowing against the substrate surface, and to form and remove a reacted portion of the substrate surface.

Abstract: A method of forming a semiconductor structure includes the steps: providing a substrate; forming a dielectric over the substrate; forming an opening recessed under a top surface of the dielectric; forming a barrier layer on a sidewall of the opening; performing a physical vapor deposition (PVD) to form a copper layer over the barrier layer, a corner of the opening intersecting with the top surface and the top surface with a predetermined resputter ratio so that the ratio of the thickness of the copper layer on the barrier layer and the thickness of the copper layer over the top surface is substantially greater than 1.

Abstract: A design rule generating method is provided. The method includes receiving a test pattern, providing a plurality of workflows, which correspond to the test pattern and are preset in relation to a lithography model and a mask generation method, and performing simulation on the test pattern according to a workflow selected from the workflows.

Abstract: A deposition arrangement for depositing a material on a substrate is described. The deposition arrangement includes a vacuum chamber; a roller device within the vacuum chamber; and an electrical heating device within the roller device, wherein the heating device comprises a first end and a second end, and wherein the heating device is held at the first end and at the second end. Also, a method for heating a substrate in a vacuum deposition arrangement is described.

Abstract: An apparatus for fabricating an organic light emitting display panel is disclosed. In one embodiment, the apparatus includes i) a first roll around which a film is wound to be continuously drawn, ii) a second roll arranged to face the first roll and around which the film is continuously wound, iii) a plurality of chambers disposed between the first and second rolls and through which the film passes, and in which laser induced thermal imaging (LITI) is performed on a substrate by forming a transfer layer on the film, and iv) a gate unit installed at least one of the chambers and disposed at at least one of a film inlet and a film output of the chambers that are installed, to maintain a substantially vacuum state in the chambers during passing of the film.

Abstract: Disclosed are systems and methods, including a method that includes depositing a curable adhesive onto a first surface of a substrate in a pre-determined pattern, placing topping material onto the substrate with the deposited adhesive, and applying UV energy to the substrate including the deposited adhesive and the placed topping material to cause curing of the deposited adhesive.

Abstract: An object is to improve use efficiency of an evaporation material, to reduce manufacturing cost of a light-emitting device, and to reduce manufacturing time needed for a light-emitting device including a layer containing an organic compound. The pressure of a film formation chamber is reduced, a plate is rapidly heated by heat conduction or heat radiation by using a heat source, a material layer on a plate is vaporized in a short time to be evaporated to a substrate on which the material layer is to be formed (formation substrate), and then the material layer is formed on the formation substrate. The area of the plate that is heated rapidly is set to have the same size as the formation substrate and film formation on the formation substrate is completed by one application of heat.

Abstract: Methods and apparatus for manufacturing a semiconductor light-emitting device that emits white light by forming a phosphor layer on an emission surface of the semiconductor light-emitting device at a wafer-level. The method includes: forming a plurality of light-emitting devices on a wafer; thinning the wafer, on which the plurality of light-emitting devices are formed; disposing the thinned wafer on a carrier film; and forming a phosphor layer on an emission surface of the plurality of light-emitting devices on the wafer.

Abstract: Embodiments of gate valves and methods of using same are provided herein. In some embodiments, a gate valve for use in a process chamber may include a body having an opening disposed therethrough from a first surface to an opposing second surface of the body; a pocket extending into the body from a sidewall of the opening; a gate movably disposed within the pocket between a closed position that seals the opening and an open position that reveals the opening and disposes the gate completely within the pocket; and a shutter configured to selectively seal the pocket when the gate is disposed in the open position. In some embodiments, one or more heaters may be coupled to at least one of the body or the shutter.

Abstract: A pipeline field joint coating applicator machine. The machine having a first frame arranged to be mounted on a pipeline, the frame carrying an induction heating coil which encircles the field joint for heating. A second frame mounted on the pipeline and rotatable thereabout, which second frame carries a pipeline field joint coating applicator. A dust extraction hood mounted on the second frame having lateral sides with respective holes therein through which the pipeline may pass. The dust extraction hood is coupled to a vacuum source and a filter such that air may be drawn into the hood via one or both of the holes so that coating material-contaminated air is filtered.

Abstract: A manufacturing apparatus and a manufacturing method for a quantum dot material. The manufacturing apparatus adds an optical device capable of generating an interference pattern in an existing epitaxial apparatus, so that a substrate applies an interference pattern on an epitaxial layer while performing epitaxial growth. By means of the interference pattern, a regularly distributed temperature field is formed on the epitaxial layer, so that on the epitaxial layer, an atom aggregation phenomenon is formed at dot positions with higher temperature, but no atoms are aggregated on areas having relatively lower temperature. Therefore, according to the temperature distribution on the surface of the epitaxial layer, positions where quantum dots generate can be controlled manually without introducing defects, thereby achieving a defect-free and long-range ordered quantum dot manufacturing.

Abstract: A light-emission output of a flash lamp for performing a light-irradiation heat treatment on a substrate in which impurities are implanted is increased up to a target value L1 over a period of time from 1 to 100 milliseconds, is kept for 5 to 100 milliseconds within a fluctuation range of plus or minus 30% from the target value L1, and is then attenuated from the target value L1 to zero over a period of time from 1 to 100 milliseconds. That is, compared with conventional flash lamp annealing, the light-emission output of the flash lamp is increased more gradually, is kept to be constant for a certain period of time, and is then decreased more gradually. As a result, a total heat amount of a surface of the substrate increases compared with the conventional case, but a surface temperature thereof rises more gradually and then drops more gradually compared with the conventional case.

Abstract: A processing apparatus includes an end station configured to support thereon a workpiece, an ion beam generator and a scanning device. The ion beam generator is configured to generate an ion beam toward the end station. The scanning device is configured to scan the ion beam in a transverse scanning direction. The scanning device is configured to be disposed in a first path of the ion beam toward the end station and out of a second path of the ion beam toward the end station.

Abstract: A system for in-process orientation of particles used in direct-write inks for fabricating a component may include a device for polarizing direct-write particles in an aerosol. An outlet may direct the aerosol including the polarized direct-write particles on a substrate to form a component. An apparatus may cause the polarized direct-write particles to be aligned in a selected orientation to form the component with predetermined characteristics when deposited on the substrate.

Abstract: A semiconductor wafer in which a carbon thin film is formed on a surface of a silicon substrate implanted with impurities is irradiated with flash light emitted from flash lamps. Absorbing the flash light causes the temperature of the carbon thin film to increase. The surface temperature of the silicon substrate implanted with impurities is therefore increased to be higher than that in a case where no thin film is formed, and the sheet resistance value can be thereby decreased. When the semiconductor wafer with the carbon thin film formed thereon is irradiated with flash light in high concentration oxygen atmosphere, since the carbon of the thin film is oxidized to be vaporized, removal of the thin film is performed concurrently with flash heating.

Abstract: The present invention relates to a multilayer barrier film capable of encapsulating a moisture and/or oxygen sensitive electronic or optoelectronic device, the barrier film including at least one nanostructured layer including reactive nanoparticles capable of interacting with moisture and/or oxygen, the reactive nanoparticles being distributed within a polymeric binder, and at least one ultraviolet light neutralizing layer comprising a material capable of absorbing ultraviolet light, thereby limiting the transmission of ultraviolet light through the barrier film.

Abstract: A machine for coating an optical article with an anti-soiling coating composition, includes a vacuum chamber (8) configured to receive the optical article, a vacuum pump (20) connected to the vacuum chamber (8), a plasma generator (11) configured to carry out a vacuum plasma treatment of the optical article, an evaporation device (10) configured to carry out a vacuum evaporation treatment of the composition for depositing it on the optical article, a control unit (2) controlling the plasma generator for removing an initial outermost anti-soiling coating of the article, controlling the evaporation device for recoating the article with the anti-soiling coating composition, being configured to causes the vacuum pump (20) to suck gases from the chamber (8) during vacuum plasma treatment and being further configured to causes the vacuum pump (20) not to suck gases from the chamber (8) during vacuum evaporation treatment.

Abstract: Embodiments of a lamphead and apparatus utilizing same are provided. In some embodiments, a lamphead for thermal processing may include a monolithic member having a plurality of coolant passages and a plurality of lamp passages and reflector cavities, wherein each lamp passage is configured to accommodate a lamp and each reflector cavity is shaped to act as a reflector or to receive a replaceable reflector for the lamp, and wherein the plurality of coolant passages are disposed proximate to the plurality of lamp passages; and at least one heat transfer member extending from the monolithic member into each coolant passage, wherein the at least one heat transfer member extends into each coolant passage up to the full height of each coolant passage. The lamphead may be disposed in an apparatus comprising a process chamber having a substrate support, wherein the lamphead is positioned to provide energy to the substrate support.

Abstract: A method for manufacturing a photovoltaic device includes a step of depositing one of an amorphous layer of ZnTe and a multilayer stack of Zn and Te adjacent a semiconductor layer. The one of the amorphous layer and the multilayer stack is then subjected to an energy impulse at a temperature equal to or greater than its critical temperature. The energy impulse results in an explosive crystallization to form a polycrystalline layer of ZnTe from the one of the amorphous layer and the multilayer stack.

Abstract: The invention relates to a process for the continuous production of a flexible substrate, preferably a plastics film containing a multi-layer coating in a roll-to-roll coating process, in which at least one vacuum coating process and at least one wet coating process are combined together, and to a device for use in such a process.

Abstract: An apparatus for heat treating semiconductor wafers is disclosed. The apparatus includes a heating device which contains an assembly linear lamps for emitting light energy onto a wafer. The linear lamps can be placed in various configurations. In accordance with the present invention, tuning devices which are used to adjust the overall irradiance distribution of the light energy sources are included in the heating device. The tuning devices can be, for instance, are lamps or lasers.

Abstract: A method and apparatus for thermally processing a substrate is provided. In one embodiment, a method for thermally treating a substrate is provided. The method includes transferring a substrate at a first temperature to a substrate support in a chamber, the chamber having a heating source and a cooling source disposed in opposing portions of the chamber, heating the substrate to a second temperature during a first time period while the substrate is disposed on the substrate support, heating the substrate to a third temperature during a second time period while the substrate is disposed on the substrate support, and cooling the substrate in the chamber to a fourth temperature that is substantially equal to the second temperature during the second time period.

Abstract: The invention relates to a plasma coating device (10) and a method for homogenous coating of a substrate (12). It comprises a particle reservoir (14), a dosing device (16) for dosing the particles (15) contained in the particle reservoir (14), a processing chamber (20) and a transport line (18) to convey particles (15) into the processing chamber (20). The processing chamber pressure (P1) in the processing chamber (20) is lower than the particle reservoir pressure (P2) in the particle reservoir (14).

Abstract: An apparatus and method for treating layers are provided that use a plasma zone sealed from the outer atmospheric pressure. The apparatus includes a plasma reactor with a substrate carrier in form of a container receiving device and a closing element that is joined with the substrate carrier by a lifting device.

Abstract: When a semiconductor wafer is preheated by halogen lamps, the temperature of a peripheral portion of the semiconductor wafer is lower than that of a central portion thereof. A laser light emitting part disposed immediately under the center of the semiconductor wafer is rotated about the center line of the semiconductor wafer, while laser light is directed from the laser light emitting part toward the peripheral portion of the semiconductor wafer. Thus, the irradiation spot of the laser light exiting the laser light emitting part swirls around along the peripheral portion of the back surface of the semiconductor wafer so as to draw a circular trajectory. As a result, the entire peripheral portion of the semiconductor wafer at a relatively low temperature is uniformly heated. This achieves a uniform in-plane temperature distribution of the semiconductor wafer.

Abstract: A nozzle housing assembly, which is used in a convection heating furnace for a heat treatable glass sheet. The nozzle housing assembly comprises an elongated enclosure, at least one elongated heating resistance in the enclosure for heating convection air, and orifices in a bottom surface of the enclosure for blasting heated convection air against the glass sheet. The enclosure is divided with a flow-throttling partition into a top supply duct and a bottom nozzle box, the heating resistances being housed in the latter. Flow-throttling openings present in the partition are positioned to comply with the location and shape of the heating resistances.

Abstract: Apparatus for processing a substrate are provided herein. In some embodiments, a substrate support includes a substrate support surface and a shaft; an RF electrode disposed in the substrate support proximate the substrate support surface to receive RF current from an RF source; a heater disposed proximate the substrate support surface to provide heat to a substrate when disposed on the substrate support surface, the heater having one or more conductive lines to provide power to the heater; a thermocouple to measure the temperature of a substrate when disposed on the substrate support surface; and a conductive element having an interior volume with the one or more conductive lines and the thermocouple disposed through the interior volume, the conductive element coupled to the RF electrode and having an electric field of about zero in the interior volume when RF current is flowed through the conductive element.

Abstract: A UV lamp assembly having rotary shutters. Each rotary shutter has a concave wall with a reflective concave surface. The rotary shutters can be collectively rotated between an open position and an closed position. At the open position, the rotary shutters do not block UV light of UV lamps from leaving the UV lamp assembly while at the closed position the rotary shutters block UV light from leaving the UV lamp assembly.

Abstract: An apparatus comprises an ionization chamber for providing ions during a process of ion implantation, and an electron beam source device inside the ionization chamber. The electron beam source device comprises a field emission array having a plurality of emitters for generating electrons in vacuum under an electric field.

Abstract: Methods and apparatus for controlling the temperature of multi-zone heater in a process chamber are provided herein. In some embodiments, a method is provided to control a multi-zone heater disposed in a substrate support, wherein the multi-zone heater has a first zone and a second zone. In some embodiments, the method may include measuring a current drawn by the first zone at a first time; measuring a voltage drawn by the first zone at the first time; calculating the resistance of the first zone based upon the measured current and voltage drawn by the first zone at the first time; determining a temperature of the first zone based upon a predetermined relationship between the resistance and the temperature of the first zone; and adjusting the temperature of the first zone in response to the temperature determination.

Abstract: In this invention, it provides a method for forming a pattern, which is capable of improving position control after a drop, which was discharged from a drop discharge apparatus, was landed on a substrate. In addition, it provides a drop discharge apparatus which is capable of improving drop position accuracy after it was landed. Further, it provides a method for manufacturing a semiconductor device which uses the drop discharge apparatus of this invention. This invention is characterized in that a drop which was discharged from a discharge part, or a substrate on which a drop is landed, is irradiated with a laser beam, and a landing position of a drop is controlled. By this invention, it is possible to form a pattern, without using a photolithography process.

Abstract: Flash lamps connected to short-pulse circuits and flash lamps connected to long-pulse circuits are alternately arranged in a line. The duration of light emission from the flash lamps connected to the long-pulse circuits is longer than the duration of light emission from the flash lamps connected to the short-pulse circuits. A superimposing of a flash of light with a high peak intensity from the flash lamps that emit light for a short time and a flash of light with a gentle peak from the flash lamps that emit light for a long time can increase the temperature of even a deep portion of a substrate to an activation temperature or more without heating a shallow portion near the substrate surface more than necessary. This achieves the activation of deep junctions without causing substrate warpage or cracking.

Abstract: The present invention relates to an apparatus which coats a substrate inside the vacuum chamber with the powder transported and entrained on the air from the outside without any extra gas supplier. Namely, the apparatus can coat the powder transported and entrained on the air naturally sucked in from the outside on a substrate through the spray nozzle inside the vacuum chamber as the pressure of the vacuum chamber is controlled and the pressure of the front of the spray nozzle is set under the atmospheric pressure.

Abstract: An apparatus for processing coating material includes a crucible having a receptacle for receiving coating material, a drive member having a drive shaft, a cover coupled to the drive shaft, and a flame nozzle opposing the receptacle. The cover includes an inner chamber, a first through hole and a number of second through holes. The first through hole and the second through holes communicate with the inner chamber. The cover has a flat surface with the second through holes exposed at the flat surface. The drive shaft drives the cover to rotate between a closed position where the cover covers the receptacle and the flat surface presses against the coating material to flatten the coating material, and an open position where the cover is moved away from the receptacle. The flame nozzle sprays flame from the second through holes through the first through hole to heat the coating material.

Abstract: A method of depositing lithium-containing films on a battery substrate in a sputtering chamber is provided. At least one pair of sputtering targets that each comprise a lithium-containing sputtering member is provided in the sputtering chamber, the sputtering targets selected to each have a conductivity of at least about 5×10?6 S·cm?1. A substrate carrier holding at least one battery substrate is placed in the sputtering chamber. A pressure of sputtering gas is maintained in the sputtering chamber. The sputtering gas is energized by applying to the pair of sputtering targets, an electrical power at a frequency of from about 10 to about 100 kHz.

Abstract: A system for processing substrates has a vacuum enclosure and a processing chamber situated to process wafers in a processing zone inside the vacuum enclosure. Two rail assemblies are provided, one on each side of the processing zone. Two chuck arrays ride, each on one of the rail assemblies, such that each is cantilevered on one rail assemblies and support a plurality of chucks. The rail assemblies are coupled to an elevation mechanism that places the rails in upper position for processing and at lower position for returning the chuck assemblies for loading new wafers. A pickup head assembly loads wafers from a conveyor onto the chuck assemblies. The pickup head has plurality of electrostatic chucks that pick up the wafers from the front side of the wafers. Cooling channels in the processing chucks are used to create air cushion to assist in aligning the wafers when delivered by the pickup head.

Abstract: Apparatus and methods for uniform metal plating onto a semiconductor wafer, such as GaAs wafer, are disclosed. One such apparatus can include an anode and a showerhead body. The anode can include an anode post and a showerhead anode plate. The showerhead anode plate can include holes sized to dispense a particular plating solution, such as plating solution that includes gold, onto a wafer. The showerhead body can be coupled to the anode post and the showerhead anode plate. The showerhead body can be configured to create a seal sufficient to substantially prevent a reduction of pressure in the plating solution flowing from the anode post to holes of the showerhead anode plate.

Abstract: An apparatus and method is disclosed for forming a nano structure on a substrate with nano particles. The nano particles are deposited through a nano size pore onto the substrate. A laser beam is directed through a concentrator to focus a nano size laser beam onto the deposited nano particles on the substrate. The apparatus and method is suitable for fabricating patterned conductors, semiconductors and insulators on semiconductor wafers of a nano scale line width by direct nanoscale deposition of materials.

Abstract: An ultraviolet (UV) LED-based lamp for UV curing lamp assemblies is disclosed. An array of UV emitting LEDs are packaged together and arranged along the length of a cylindrical lens to form a UV LED-based optical component assembly. The UV LED-based optical component assembly may be made to be modular. A UV LED lamp assembly may comprise a plurality of UV LED-based optical component assemblies arranged around a workpiece tube. The workpiece tube may be filled with an inert gas and may be made of quartz or glass. One or more curved back reflectors may be placed opposite the LED UV LED-based optical component assemblies to collect UV light escaping the workpiece tube and refocus the light to the other side of the workpiece. The UV LEDs may be arranged on a single surface or a multi-level tiered platform.

Abstract: Disclosed is a substrate rotating and oscillating apparatus for a rapid thermal process (RTP), that oscillates an oscillation plate using an oscillation motor moved by an elevating unit. Rotational shafts of the oscillation motor comprise lower and upper center rotational shafts mounted on a central axis of the motor, and an eccentric shaft mounted between the lower and the upper center rotational shafts as deviated from the central axis. An oscillation cam is mounted to the eccentric cam. The oscillation plate has an oscillation hole for inserting the oscillation cam therein. A bearing is mounted between the oscillation cam and the eccentric shaft such that the oscillation cam rotates independently from the eccentric shaft. The oscillation plate supports the whole multipole-magnetized magnetic motor or maglev motor. Accordingly, the substrate can be uniformly heated by both rotating and all-directionally oscillating the substrate.