Abstract: A semiconductor device includes a substrate having a memory region and a logic region. A first dielectric layer is disposed on the substrate. A first conductive structure and a second conductive structure are formed in the first dielectric layer and respectively on the memory region and the logic region of the substrate. A memory cell is disposed on the first dielectric layer and directly contacts a top surface of the first conductive structure. A first cap layer is formed on the first dielectric layer and continuously covers a top surface and a sidewall of the memory cell and a top surface of the second conductive structure. A second dielectric layer is formed on the first cap. A third conductive structure is formed in the second dielectric layer and penetrates through the first cap layer to contacts the memory cell.

Abstract: A drying device dries a medium being transported, the drying device including a support unit configured to support the medium, and a non-contact heater facing the support unit. The support unit includes a first support unit and a second support unit located at a position different from a position of the first support unit in a transport direction of the medium being transported, the medium bends along the second support unit, the first support unit is composed of an aluminum material, and the second support unit is composed of a material having a thermal expansion coefficient smaller than a thermal expansion coefficient of the aluminum material.

Abstract: A manufacturing machine is a manufacturing machine capable of additive manufacturing. The manufacturing machine includes: an additive-manufacturing head configured to be movable in a machining area and to discharge material powder toward a workpiece and irradiate the workpiece with an energy beam; and a powder chute configured to be movable in the machining area and to receive material powder discharged from the additive-manufacturing head toward the workpiece and failing to attach to the workpiece. There is provided the manufacturing machine configured in the above-described manner to be capable of efficiently collecting material powder having failed to attach to the workpiece during additive manufacturing.

Abstract: An evaporation crucible and an evaporation device are provided. The evaporation crucible includes a crucible body and a plurality of nozzles connected to the crucible body, wherein at least one of the nozzles is provided with a nozzle heating structure at a periphery thereof. The evaporation device includes the above-mentioned evaporation crucible.

Abstract: An exemplary embodiment of the present invention provides for a fluid ejection device. The fluid ejection device includes a substrate, a conductive layer, a resistive layer, and at least one upper layer. The conductive layer is disposed on the substrate and an outer perimeter and an inner region thinner than the outer perimeter. The outer perimeter includes conductive elements spaced apart from one another. The resistive layer includes an outer resistive portion overlying the conductive elements and a central resistive portion lying on top of a raised bridge of the substrate, wherein the width of the raised bridge is substantially greater than the width of the central resistive portion. The at least one upper layer defines a boundary of a fluid chamber, and the boundary is aligned vertically above a border of the central resistive portion.

Abstract: The coating device according to the invention for a workpiece comprises a flow channel which has an opening for the workpiece, through which the workpiece protrudes at least partially into the interior of the flow channel during the coating. In addition, a spraying device is provided, which is arranged in such a way that coating material can be sprayed into the interior of the flow channel by means of the spraying device. Furthermore, the coating device comprises a flow generator, which is arranged and can be operated in such a way that the flow generator produces in the flow channel a flow (L1, L2) directed in the longitudinal direction (LA) of the flow channel.

Abstract: A temperature controlled substrate support assembly used for processing a substrate in a vacuum chamber of a semiconductor processing apparatus. The substrate support assembly comprises a top plate for supporting the substrate. A base plate is disposed below the top plate wherein the base plate comprises a cavity in an upper surface of the base plate. A cover plate is disposed between the top plate and the base plate. At least one thermoelectric module is in the cavity in the upper surface of the base plate wherein the at least one thermoelectric module is in thermal contact with the top plate and the base plate, and the at least one thermoelectric module is maintained at atmospheric pressure.

Abstract: A disclosed substrate processing apparatus comprises a heat exchange plate configured to heat and/or cool the substrate; plural protrusions provided on the heat exchange plate so as to allow the substrate to be placed on the plural protrusions, leaving a gap between the substrate and the heat exchange plate; a suction portion configured to attract the substrate onto the plural protrusion by suction through plural holes formed in the heat exchange plate; and a partition member that is provided on the heat exchange plate and lower than the plural protrusions, wherein the partition member is configured to divide the gap into two or more regions including at least one of the holes so that at least one of the two or more regions is two-dimensionally closed by the partition member.

Abstract: The present invention relates to an apparatus for manufacturing an inorganic thin-film solar cell, the apparatus including: a substrate stage which is mounted in a chamber and in which a solar cell substrate is disposed; and an inorganic powder supply unit including a nozzle configured to discharge an inorganic powder aerosol containing an inorganic powder onto the substrate stage in a supersonic flow so as to form a solar cell layer on the solar cell substrate, and an inorganic powder supply portion configured to supply the inorganic powder aerosol to the nozzle.

Abstract: A patch application system is provided comprising a powder application booth. The powder application booth comprises a powder block to temporarily house the powder prior to ejection, a nozzle insert to guide the powder onto the screw, a support stand to adjust the powder block to the appropriate position relative to the screw for a desired patch location and size, a powder cup to deliver the powder to the powder block. A programmable logic controller electronically coupled to the micro air-switch valve controls the duration the air-switch valve remains open. The entire process may be automated by including a screw hopper to temporarily store a plurality of screws, a bowl feeder receiving the screws and delivering the screws to a rotating disk, wherein the rotating disk passes the screws through a heating element and presents the heated screws to the powder application booth.

Abstract: A substrate processing apparatus including: a heating part for heating a wafer; a transport part through which a wafer is transported; a first transfer arm that receives a wafer from the heating part and places the wafer on the transport part; and a second transfer arm including a pair of plate-like tweezers that receives the wafer placed on the transport part from the transport part and transfers the wafer. The transport part includes a cooling plate having a cooling surface on which a wafer is placed. The cooling plate includes a temperature-adjusting channel through which a temperature-adjusting water is circulated for cooling the cooling plate to a temperature lower than a temperature of the heating process of the heating part. The cooling surface is provided with a recess that is similar in shape to and slightly larger than a planar shape of the pair of tweezers.

Abstract: A device and a method for delivering a fluid, in particular hot-melt adhesive. The device includes a base member having an inlet opening for receiving the fluid from a fluid source and an outlet opening for delivering the fluid to a nozzle arrangement. The nozzle arrangement has a discharge passage with a discharge opening for delivery of the fluid. A heat transfer member heats or cools the fluid and includes a heat transfer passage through which the fluid can flow. The heat transfer passage is of a flow cross-section which changes in the flow direction.

Abstract: A method and structure for forming an ink jet print head having a dielectric interstitial layer. A flexible top plate attached to a press can be used to apply pressure to an uncured dielectric interstitial layer. The uncured dielectric interstitial layer is cured while contacting the uncured dielectric interstitial layer with the flexible top plate and applying pressure using the press. Using a flexible top plate rather than a rigid top plate has been found to form a cured interstitial layer over an array of piezoelectric elements which has a more uniform or planar upper surface. An interstitial layer so formed can result in decreased processing time, reduced problems with ink communication in the ink jet print head during use, and decreased manufacturing costs.

Abstract: Substrate support assemblies and deposition chambers employing such support assemblies to improve temperature uniformity during film depositions, such as epitaxial growths of group-V material stacks for LEDs. In one embodiment, the support assembly includes a first component having a first thermal resistance and a top surface upon which the substrate is to be disposed at a first location. The support assembly further includes a second component to be disposed over the first component and cover a second location of the susceptor while the substrate is disposed over the first location and having a second thermal resistance to insulate regions of the susceptor adjacent to the substrate by an amount approximating that of the substrate during a deposition process. In embodiments, the second component is removable from the first component and supports the substrate in absence of the first component during transfer of the substrate between multiple deposition systems.

Abstract: An embodiment of the invention includes a continuous feed variable depth die cut for use in cutting kinesiology tape. The die cut includes a housing, including a first opening configured to allow the kinesiology tape to enter the housing and a second opening configured to allow the kinesiology tape to exit the housing. The die cut also includes a roller inside the housing, wherein the roller is configured to rotate as the kinesiology tape passes over the roller and a die formed on the outer surface of the roller, wherein the die includes a cutting edge for cutting the kinesiology tape and wherein the cutting edge is formed in the shape of the strip of kinesiology tape to be cut. The die cut further includes a surface inside the housing, wherein the kinesiology tape passes over the surface when the kinesiology tape is being cut.

Abstract: A system for processing a substrate is provided. The system includes a power source for providing a current, and an RF coil which generates a magnetic field when supplied with the current from the power source. The system further includes a susceptor for supporting the substrate. The susceptor is inductively heated by the magnetic field. The heat from the susceptor is transferred to the substrate so as to heat the substrate.

Abstract: A coated printing substrate, preferably for offset or inkjet printing, comprises a coating composed of a water eraulsifiable binder, calcium carbonate or sulphate, a granular material of the grain size of a flour or a fine sand, and water. BGy a proper production method can be obtained a product which can be produced at industrial level with low costs and it is particularly suitable for the reproduction of photos or art pieces such as paintings or frescos as it gives the visual and tactile sensations of such kinds of art pieces, allowing, at the same time, high quality printing.

Abstract: Apparatus and method for synthesizing nanostructures in a controlled process. An embodiment of the apparatus comprises a stage or substrate holder that is heated, e.g., resistively, and is the primary source of heating for the substrate for nanostructure synthesis. The substrate and substrate heater are enclosed in a chamber, e.g., a metal chamber, which is ordinarily at a lower temperature than are the substrate and substrate heater during synthesis. Some embodiments of the invention are particularly useful for chemical vapor deposition (CVD), low pressure CVD (LPCVD), metal organic CVD (MOCVD), and general vapor deposition techniques. Some embodiments of the present invention allow for in situ characterization and treatment of the substrate and nanostructures.

Abstract: A method of manufacturing an optical data storage medium, comprising at least one substrate (11) and a plurality of layers deposited on the substrate (11) is described. The medium includes at least one of a transparent spacer layer and transparent cover layer (12). The layer (12) is provided by applying a liquid onto the rotating substrate (11) and rotating the substrate (11) further in order to spread out the liquid into a layer substantially uniformly between an inner radius ri and an outer radius ro, and solidifying the liquid layer (12) by means of exposure to UV radiation. After applying the liquid onto the rotating substrate the liquid layer (12) is heated by heating means (14) in such a way that the temperature rise of the liquid layer (12) at ri has a value dTri, while the temperature rise of the liquid layer (12) between ri and ro gradually increases, and the temperature rise of the liquid layer (12) at ro has a value dTro>dTri.

Abstract: An apparatus for printing active materials, such as adhesives, onto articles, such as absorbent articles or release paper, using a coater with a multitude of applicators. The applicators coat a surface (roll) with a multitude of beads of the active material. The apparatus also includes a specific coating blade, which contacts the surface with the active material at a certain angle and thereby coats the surface even better.

Abstract: In the present invention, a holding table incorporating a heater is provided, for example, in a treatment container of a planarization unit. A pressing plate having a lower surface formed flat is disposed above the holding table. The pressing plate is movable in the vertical direction and can lower to the holding table to press a resist film on the substrate from above. The pressing plate intermittently presses the upper surface of the resist film to planarize the upper surface while the heater is heating the substrate on the holding table at a predetermined temperature to dry the resist film. According to the present invention, a coating film applied on the substrate can be sufficiently planarized and dried.

Abstract: A chuck for supporting a wafer and maintaining a constant background temperature across the wafer during laser thermal processing (LTP) is disclosed. The chuck includes a heat sink and a thermal mass in the form of a heater module. The heater module is in thermal communication with the heat sink, but is physically separated therefrom by a thermal insulator layer. The thermal insulator maintains a substantially constant power loss at least equal to the maximum power delivered by the laser, less that lost by radiation and convection. A top plate is arranged atop the heater module, supports the wafer to be processed, and provides a contamination barrier. The heater module is coupled to a power supply that is adapted to provide varying amounts of power to the heater module to maintain the heater module at the constant background temperature even when the wafer experiences a spatially and temporally varying heat load from an LTP laser beam.

Abstract: A deposition method and a system are provided to deposit a CdS buffer layer on a surface of a solar cell absorber layer of a flexible workpiece from a process solution including all chemical components of the CdS buffer layer material. CdS is deposited from the deposition solution while the flexible workpiece is heated and elastically shaped by a heated shaping plate to retain the process solution on the solar cell absorber layer. The flexible workpiece is elastically shaped by pulling a back surface of the flexible workpiece into a cavity area in the heated shaping plate using an attractive force.

Abstract: A deposition method which deposits a CdS buffer layer on a surface of a solar cell from a process solution including all chemical components of the CdS buffer layer material. CdS is deposited in a deposition chamber by heating the surface of the solar cell absorber to cause the transfer of heat from the solar cell absorber layer to at least a portion of the process solution that is in contact with the surface. Used solution is cooled, and replenished in a solution container and redirected into the deposition chamber.

Abstract: A substrate treating apparatus is capable of promptly heating substrates after exposure, and avoiding an adverse thermal influence on an exposing apparatus. A developing block includes heating modules for heating exposed substrates. An interface block is interposed between the heating modules and the exposing apparatus to isolate the exposing apparatus from the thermal influence of the heating modules. The interface block has a transport mechanism for transporting the substrates to the heating modules, whereby the exposed substrates are promptly transferred to the heating modules.

Abstract: A deposition method which deposits a CdS buffer layer on a surface of a solar cell from a process solution including all chemical components of the CdS buffer layer material. CdS is deposited in a deposition chamber by heating the surface of the solar cell absorber to cause the transfer of heat from the solar cell absorber layer to at least a portion of the process solution that is in contact with the surface. Used solution is cooled, and replenished in a solution container and redirected into the deposition chamber.

Abstract: A method for performing a predetermined process on a substrate having coating film formed thereon includes preparing a data base denoting a relationship between each of parameters and a processing time of a predetermined process and storing the data base in a control section. The parameters include the temperature of a disposing plate, a supply rate of an ammonia gas, and an amount of a water vapor contained in the ammonia gas. The method further includes inputting a preset specific time value of the process into the control section; calculating candidate values of the parameters to finish the predetermined process by the specific time value; and determining specific values of the parameters to be used, based on the candidate values.

Abstract: Embodiments of a heating element of a fluid ejection device are disclosed.

Abstract: A substrate processing apparatus and method which employs the so-called batch processing method of processing a plurality of substrates simultaneously, thereby increasing the throughput, and which can carry out processing, such as electroless plating, stably and securely with a relatively simple apparatus. The substrate processing apparatus includes: a processing bath (14) for holding a processing liquid (12); and a substrate holder (16) which is vertically movable relative to the processing bath (14) and which includes a plurality of substrate holding portions (40) for holding a plurality of substrates (W) in parallel.

Abstract: The present invention relates to a method for heat processing a substrate. After a coating film is formed on the substrate, the substrate is baked at a predetermined high temperature. The baking step is performed by first increasing the substrate temperature from a predetermined low temperature to a predetermined intermediate temperature that is lower than a predetermined reaction temperature at which the coating film reacts. Next, a second baking step maintains the substrate at the predetermined intermediate temperature for a predetermined period of time, and is followed by a third step of increasing the temperature of the substrate to the predetermined high temperature that is higher than the predetermined reaction temperature. This results in uniform temperature within the surface of the substrate when the temperature of the substrate reaches the reaction temperature. Consequently, a chemical reaction due to heat processing of the coating film within the surface of the substrate is performed uniformly.

Abstract: An aging unit (DAC) for processing a wafer W having a coated film formed thereon includes a disposing plate, a temperature control circulating device for controlling the temperature of the disposing plate, a chamber, a gas supply mechanism for supplying an ammonia gas containing a water vapor into the chamber, an input section for inputting the processing time of the wafer W, and a control device for controlling the temperature of the disposing plate, the supply rate of the ammonia gas, and the amount of the water vapor contained in the ammonia gas so as to permit the processing of the wafer W to be finished in the processing time inputted into the input section.

Abstract: Provided is a dispenser for dispensing particles onto a surface comprising a hopper for receiving particles, wherein the hopper has an opening at its bottom, a screen having openings and located adjacent the opening of the hopper, wherein the screen openings are uniformly sized and spaced and are sufficiently large to let the largest particles pass through during dispensing yet sufficiently small to hold the particles back when the dispenser is not operating, and means, located outside of the hopper, for moving particles from the hopper through the screen, and onto the surface. Also provided is a method of making a web with embedded particles comprising the sequential steps of making the web receptive to the particles by heating, eliminating static charges present on the web, dispensing the particles onto the web, dispersing the particles to minimize particle clumping in the web, and embedding the dispensed particles in the web.

Abstract: After a first processing solution is spread over the front surface of a substrate and the temperature of the front surface of the substrate is regulated at a predetermined substrate temperature, a second processing solution is spread over the front surface of the substrate. The second processing solution can be spread while the front surface temperature of the substrate is maintained at the predetermined substrate temperature. Hence, a layer insulating film with good adhesion properties can be formed uniformly on the front surface of the substrate, and the quantity of the processing solution to be used can be reduced.

Abstract: Systems and methods for creating a combinatorial coating library including a coating system operatively coupled to at least one of a plurality of materials suitable for forming at least one coating layer on a surface of one or more substrates. The systems and methods also including a curing system operative to apply at least one of a plurality of curing environments to each of a plurality of regions associated with the at least one coating layer, the curing system comprising a plurality of waveguides each having a first end corresponding to at least one of the plurality of regions and a second end associated with at least one curing source. The combinatorial coating library comprising a predetermined combination of at least one of the plurality of materials and at least one of the plurality of curing environments associated with each of the plurality of regions.

Abstract: Using a scan coating method, a liquid film is formed on a substrate having a temperature distribution for correcting a temperature distribution of a liquid film caused by the heat of evaporation due to the volatilization of a solvent contained in the liquid film, and then the solvent is removed from the liquid film to form a coating film.

Abstract: The present invention is a film forming unit for applying a coating solution to a substrate to form a coating film on the substrate, which has a heating and/or cooling member brought into direct or indirect contact with said substrate for changing a temperature of at least a peripheral portion of the substrate. By changing the temperature of a perimeter portion of the substrate by means of it, a temperature of the coating solution applied on the substrate can be changed. Consequently, surface tension of the coating solution decreases or increases, and swelling of the coating solution occurring at the substrate perimeter portion and reduction in film thickness can be prevented. As a result, a coating film with a predetermined film thickness is formed also on the perimeter portion of the substrate, thus making it possible to enhance yield.

Abstract: In an organic insulating film coating apparatus, an organic insulating film is applied onto a wafer by a spin coating. Thereafter, the wafer is subjected to heat processing and an inorganic insulating film is applied onto the wafer by a spin coating in an inorganic insulating film coating apparatus. After the coating of the inorganic insulating film, the wafer is subjected to aging processing and exchange-chemical coating processing. Thereafter, a solvent in the coating film is removed in a low-temperature heat processing apparatus and a low-oxygen and high-temperature heat processing apparatus, and thermal processing is performed for the wafer in a low-oxygen curing and cooling processing apparatus.

Abstract: An apparatus for forming a coating film comprising, a coating unit for forming a coating film by applying a coating solution onto a substrate, and a curing unit for curing the coating film by applying a heating and a cooling to the substrate, in which, the curing unit comprises a heating chamber having a hot plate for heating substrates having the coating solution applied thereon one by one, a cooling chamber communicated with the heating chamber and having a cooling plate for cooling the substrates processed with heat, an inert gas supply mechanism for supplying an insert gas to the heating chamber and the cooling chamber, and an evacuation mechanism for evacuating each of the heating chamber and the cooling chamber.

Abstract: The present invention includes a current plate which is arranged above a substrate in a chamber. A pressure inside the chamber is reduced by exhaust means and drying processing is performed on, for example, a coating solution on the substrate. On a peripheral portion of an underneath surface of the current plate, formed is a ring-shaped protrusion corresponding to a peripheral portion of the substrate. A protruding portion of a coating solution at the peripheral portion of the substrate is made flat by air current generated when the pressure is reduced, and consequently a coating film with a uniform film thickness as a whole is formed on the substrate.

Abstract: Prior to transfer of an wafer W, a mixed gas is being generated and exhausted, thereby fluctuation of concentration and temperature of a solvent component at the beginning of gas introduction into a chamber 3 is suppressed. A step of gelling after the wafer W is carried into an aging unit is divided into several steps. Until a temperature of the wafer W reaches a predetermined treatment temperature, an average concentration of the solvent component in a mixed gas is gradually raised relative to the temperature of the wafer W. Thereby, immediately after the wafer W is transferred into a sealed chamber, the gas of the solvent component is prevented from condensing.

Abstract: A substrate coated with a coating solution is placed on a heating plate in a processing chamber in which an inert gas is circulating. The substrate is heated on the heating plate while the inert gas is circulating at an extremely small first circulating amount. The substrate is heated further on the heating plate while the inert gas is circulating at a second circulating amount larger than the first circulating amount. Detected is the density of the solvent in the processing chamber. The supply and exhaust amounts of the inert gas are controlled based on the density detected after the start of heating, so that an exhaust amount of the inert gas becomes a predetermined amount for a predetermined period until the solvent density reaches a predetermined density. A necessary control process is performed so that the solvent density reaches the predetermined density when the solvent density has not reached or exceeded the predetermined density after the predetermined period has elapsed.

Abstract: A curing module for use in fabricating semiconductor wafers is provided. The cure module comprises a housing and a bottom plate. The housing also contains a heating plate adjacent a top surface of the housing and side walls extending from the top surface. The housing sidewalls, the heating plate and the bottom plate define a chamber within the cure module. Films disposed on semiconductor wafers are cured within the chamber by being raised on lift pins to the heating plate during a heating operation and then lowered on the lift pins to the bottom plate during a cooling operation.

Abstract: In a processing chamber for performing heat processing for a substrate, gas for purge, for example, N2 is supplied nearly parallel to the substrate placed on a hot plate with a gap forming member between them and toward both the front and rear faces of the substrate. Thus, an atmosphere around the substrate can be exchanged for the gas for purge efficiently, and moreover the atmosphere around the substrate can be exchanged uniformly. Accordingly, heat processing in a low oxygen atmosphere can be performed in a short time, and moreover the total time required for substrate processing can be shortened. Besides, heat processing in the low oxygen atmosphere can be performed uniformly.

Abstract: A method for filling recessed microstructures at a surface of a microelectronic workpiece, such as a semiconductor wafer, with metallization is set forth. In accordance with the method, a metal layer is deposited into the microstructures with a process, such as an electroplating process, that generates metal grains that are sufficiently small so as to substantially fill the recessed microstructures. The deposited metal is subsequently subjected to an annealing process at a temperature below about 100 degrees Celsius, and may even take place at ambient room temperature to allow grain growth which provides optimal electrical properties. Various novel apparatus for executing unique annealing processes are also set forth.

Abstract: Improved methods and apparatus are disclosed for efficiently and precisely adhering and centering particles on tacky areas on a surface containing an array of tacky and non-tacky areas. These improved methods and apparatus for particle attachment and centering involve holding and heating of the surface containing an array of tacky and non-tacky areas with particles adhered thereon for a period of time and at a temperature to allow the particles to adhere and center to the tacky areas. The surface containing the array of tacky and non-tacky areas can be heated either prior to, during or after a step of contacting the array with particles. Either discrete sheets or a continuous moving web of material having a surface containing an array of tacky and non-tacky areas can be employed. Each tacky area of an array of tacky and non-tacky areas has a size and bonding strength suitable for adhesion of one particle thereto in formation of an array.

Abstract: A workpiece holding device for a vacuum unit has coolable or heatable transfer plates (2) displaceable independently of one another in a baseplate (1) and each comprising a heat transfer surface (3) which is surrounded by an O-ring (4), is connected to a pipe (5) and, with a workpiece (15) which is pressed against the O-ring (4) by a holder (16), encloses a gap (20). The holder (16) can be locked to the baseplate (1). After lowering of the holder (16) into a closed position and load-free locking to the baseplate (1), the heat transfer plates (2) are pneumatically raised until in each case a stop (23, 22) becomes effective between said heat transfer plates and the holder (16) and determines the width of the gap (20). The gap (20) is then filled via the pipe (5) with a heat transfer medium, e.g. helium. After processing of the workpiece (15), the heat transfer plates (2) are lowered and the holder (16) is released again in a loadfree manner.

Abstract: A photo process system for semiconductor wafers prevents air from flowing across the top of a baking region to produce a stable downward laminar air flow in front of baking units disposed at several levels in the baking region. The baking region is located on one side of a housing, and a coating unit for coating a wafer with a photoresist is located on the other side of the housing. The housing has a clean air entrance and air filters at an upper portion thereof, and a clean air discharge opening at the very bottom thereof. An air flow containment dam prevents clean air entering the housing from flowing horizontally at the top of the baking region. Such a horizontal flow of air would otherwise produce turbulence severely affecting the ability of the air to flow downward across the front of the baking units and toward the discharge opening as a laminar air flow. The laminar air flow hardly passes into the baking units and thus, hardly induces temperature variations in the coated wafers that are being baked.

Abstract: Methods for processing a substrate are disclosed. In one embodiment of the invention, a substrate with a first layer and an oxide layer on the substrate is placed in a processing chamber. The oxide layer is removed while the substrate is at a first temperature in the processing chamber. A second layer is then formed on the first layer while the substrate is at a second temperature in the processing chamber.

Abstract: The described invention provides a method and apparatus for coating uniform films on substrates and curing the coatings on the surface. Within an enclosed chamber the object to be coated is positioned and a sufficient amount of liquid material is provided into the chamber to cover the surface of the object to be coated. The excess liquid material is then evacuated from the chamber at a controlled rate to leave a coating of material on the surface of the object.

Abstract: When a substrate coated with a coating solution which oxidizes at high temperatures is heat-treated, an oxygen concentration of a treatment atmosphere is lowered when the temperature is low. Next, the substrate is heat-treated in the treatment atmosphere of which the oxygen concentration is lowered. Sequentially, the treatment atmosphere is returned to that with the original oxygen concentration after the passage of a predetermined time after completing the heat treatment. Thereby, the substrate can be heat-treated, with the oxidization of the coating solution being controlled.