Abstract: A layer of reduced stress is formed on a substrate using an HDP-CVD system by delaying or interrupting the application of capacitively coupled RF energy. The layer is formed by introducing a process gas into the HDP system chamber and forming a plasma from the process gas by the application of RF power to an inductive coil. After a selected period, a second layer of the film is deposited by maintaining the inductively-coupled plasma and biasing the plasma toward the substrate to enhance the sputtering effect of the plasma. In a preferred embodiment, the deposited film is a silicon oxide film, and biasing is performed by application of capacitively coupled RF power from RF generators to a ceiling plate electrode and wafer support electrode.

Abstract: A liquid crystal material dispensing apparatus includes a spacer height measuring unit for measuring a height of a spacer on a substrate, and a liquid crystal material dispensing system for determining an amount of the liquid crystal material to be dispensed on the substrate based upon the measured spacer height and for dispensing the liquid crystal material onto the substrate.

Abstract: The present invention provides a system to dispense a liquid, contained in a cartridge, onto a substrate employing a dispensing system under control of a processor in data communication with a memory.

Abstract: A gapfill process is provided using cycling of HDP-CVD deposition, etching, and deposition step. The fluent gas during the first deposition step includes an inert gas such as He, but includes H2 during the remainder deposition step. The higher average molecular weight of the fluent gas during the first deposition step provides some cusping over structures that define the gap to protect them during the etching step. The lower average molecular weight of the fluent gas during the remainder deposition step has reduced sputtering characteristics and is effective at filling the remainder of the gap.

Abstract: Processing gases reactive with each other are provided in parallel to a processing chamber through separate delivery lines including mass flow controllers devoted to each line. The parallel delivery lines meet in a mixing manifold located proximate to the processing chamber and relatively far downstream from the mass flow controllers and other flow-constricting components of the gas delivery system. The continuous high flow of gas provided by the devoted mass flow controllers may maintain a sufficiently high pressures on the delivery lines to prevent partial clogging from leading to a further drop in pressure and complete obstruction of the delivery line.

Abstract: A system for protecting wafers from damage caused by an inaccurately-positioned wafer transfer robot blade during the transfer of wafers typically from a wafer cassette to a processing tool. The wafer protection system includes a conductor foil which is electrically separated from the robot blade through a space or gap and is connected to a relay circuit that is normally closed to facilitate flow of electrical power to the robot blade motor. Upon initial contact of the robot blade with the edge of a wafer, the conductor foil deforms and contacts the blade through the space or gap, completing a circuit between the blade and the relay circuit. The relay circuit opens, thereby terminating further power flow to the robot blade motor and immediately preventing further movement of the robot blade against the wafer.

Abstract: A method, apparatus and computer product for processing of substrates in at least a part of a substrate processing system is provided. In an embodiment, the method includes obtaining, using a processing unit, at least one of a rate of processing and a time of processing of a plurality of substrate lots to be introduced into a part of the substrate processing system and determining, using the processing unit, an order of introduction of the plurality of substrate lots into the part of the substrate processing system to at least one of increase the rate of processing and decrease the time of processing of the plurality of substrate lots.

Abstract: A plasma processing device comprising a gas injection system is described, wherein the gas injection system comprises a gas injection assembly body, a consumable gas inject plate coupled to the gas injection assembly body, and a pressure sensor coupled to a gas injection plenum formed by the gas injection system body and the consumable gas inject plate. The gas injection system is configured to receive a process gas from at least one mass flow controller and distribute the process gas to the processing region within the plasma processing device, and the pressure sensor is configured to measure a gas injection pressure within the gas injection plenum. A controller, coupled to the pressure sensor, is configured to receive a signal from the pressure sensor and to determine a state of the consumable gas inject plate based upon the signal.

Abstract: A method and apparatus are disclosed for depositing a dielectric film in a gap having an aspect ratio at least as large as 6:1. By cycling the gas chemistry of a high-density-plasma chemical-vapor-deposition system between deposition and etching conditions, the gap may be substantially 100% filled. Such filling is achieved by adjusting the flow rates of the precursor gases such that the deposition to sputtering ratio during the deposition phases is within certain predetermined limits.

Abstract: A photoresist supply apparatus of semiconductor coating equipment fills a supply pipe with new photoresist when a used photoresist bottle is replaced. The photoresist supply apparatus includes first and second photoresist bottles, first and second gas supply pipes connected to the bottles, first and second solenoid valves disposed along the gas supply pipes, first and second purge start buttons, first and second photoresist supply pipes, first and second trap tanks to which the supply pipes are connected, a third photoresist supply pipe connected to the trap tanks, a nozzle connected to the third photoresist supply pipe, first and second level sensors disposed at an upper level of the trap tanks, third and fourth level sensors disposed at a lower level of the trap tank, first and second discharge pipes connected to the trap tanks, third and fourth solenoid valves disposed along the discharge pipes, first and second drain sensors associated with the discharge pipes, and a controller.

Abstract: A central controller for a powder coating system has a single processor connected to a memory, a gun controller input/output device and gun control logic for controlling a characteristic of a spray gun. An air flow controller input/output device and air flow control logic for controlling a characteristic of a pump providing air flow may also be included. A process input/output device for electrically communicating with a process input or a process output may also be included. Part identification and tracking logic, gun triggering logic, gun movement logic, booth control logic, part profiling logic and system monitoring and logging logic may also be included.

Abstract: A process for forming a thin layer exhibiting a substantially uniform property on an active surface of a semiconductor substrate. The process includes varying the temperature within a reaction chamber while a layer of a material is formed upon the semiconductor substrate. Varying the temperature within the reaction chamber facilitates temperature uniformity across the semiconductor wafer. As a result, a layer forming reaction occurs at a substantially consistent rate over the entire active surface of the semiconductor substrate. The process may also include oscillating the temperature within the reaction chamber while a layer of a material is being formed upon a semiconductor substrate.

Abstract: A system comprising at least a multiaxial machine, each axis being equipped with motor means, provided with a sprayer and corresponding sensor and actuator, is provided. Said system comprises a means for supervising an installation including at least a computer provided with a display means and a means for inputting data; at least one programmable computer for managing the axes of the machine and the sprayer; a server for programming a spraying table; a first computer network connecting the server to the programmable computer for managing the machine and to the means for supervising the installation; and a second computer network connecting the programmable computers for managing the machine to the sensor and actuator of said machine.

Abstract: A system allows for accurate manual application of a fluid material in a linear pattern to a surface from a container holding the fluid. The system may comprise a container holding a fluid, the container having an application end from which fluid is applied to the surface at a volume flow rate that provides a volume/linear distance of the linear pattern. There is a controllable pressure system that causes pressure in the container, wherein application of higher pressure causes increased flow of fluid from the container and reduction of pressure causes reduced flow of fluid from the container. Also present is a speed indicator that provides a signal of the relative speed between the application end and the surface.

Abstract: The present invention relates to an electrically conductive film stack for semiconductors and methods and apparatus for providing same. A film stack comprising a first layer of a platinum-rhodium alloy deposited by metal organic chemical vapor deposition (MOCVD) in the presence of a reducer, such as hydrogen (H2) gas, and a second layer of the platinum-rhodium alloy deposited in the presence of an oxidizing gas, such as ozone (O3), provides an electrical conductor that is also a relatively good barrier to oxygen. The platinum-rhodium film stack can be used as an electrode or capacitor plate for a capacitor with a high-k dielectric material. The electrode formed with alternating reducing and oxidizing agents produces a rough surface texture, which enhances the memory cell capacitance.

Abstract: An apparatus and method for depositing thin films. The apparatus generally comprises a process chamber having one or more walls and a lid and two heat exchangers. A first heat exchanger is coupled to the walls and a second heat exchanger is coupled to the lid. The two heat exchangers are configured to provide separate temperature control of the walls and lid. Separate control of the lid and wall temperatures inhibits reaction of the organosilane within the lid while optimizing a reaction within the chamber. The apparatus implements a method, in which a process gas comprising ozone and an organosilane are admitted through the into a processing while a substrate is heated to form a carbon-doped silicon oxide layer over the substrate. During deposition, the lid is kept cooler than the walls.

Abstract: A delivery system and method for vaporizing and delivery of vaporized solid and liquid precursor materials at sub-atmospheric pressures between a heatable vaporization vessel and a processing tool. The system includes a pressure regulator internally positioned within the vaporization vessel and in fluid communication with a downstream mass flow controller to maintain a consistent flow of vaporized source material. The system further comprises introducing a carrier/diluent gas for diluting the vaporized source material before entry into the processing tool. A venturi is positioned directly upstream of the processing tool and provides for mixing of the carrier gas with the vaporized source material while providing the negative pressure required to open the gas pressure regulator within the vaporization vessel.

Abstract: An apparatus for use with a deposition chamber includes a temperature control system that communicates with a heating element of the deposition chamber so as to not cause the formation of a thin layer exhibiting a substantially uniform property on an active surface of a semiconductor substrate. The apparatus causes uneven heat distribution across the surface of the substrate. The apparatus may also include a feedback control system that communicates with the temperature control system so as to cause the temperature control system to alter the heat output by the heating element and, thereby, to enhance the uniformity of at least one property of the material layer being deposited.

Abstract: A processing solution is supplied from processing-solution suppliers onto the surfaces of targets to be processed while a flow rate of the processing solution is being adjusted. The processing solution is fed from a processing-solution supply source at a specific pressure via a processing-solution pressure-up feeder. The pressure of the processing solution fed via the processing-solution pressure-up feeder is adjust to another specific pressure or more at least when the processing-solution suppliers are operating simultaneously. A flow-rate detector detects the flow rate of the processing solution supplied from each processing-solution supplier. A pressure detector detects the pressure of the processing solution fed via the processing-solution pressure-up feeder.

Abstract: A method of manufacturing an item comprises the steps of: controlling a printer means to print a layer of retaining material in a predetermined pattern onto a substrate; applying a manufacturing material to be retained by the retaining material in substantially the predetermined pattern; treating the manufacturing material so that it forms a continuous solid piece in substantially the predetermined shape of the pattern, or, where the pattern is made up of distinct parts, in substantially the predetermined shape of each distinct part of the pattern.

Abstract: A mass transfer system offers the simultaneous transfer and time-saving efficiencies transfer techniques, while also offering the flexibility of prior-art free techniques. A mass transfer mechanism and an associated software control mechanism are equipped with the ability to retract a plurality of lifting arms (6), in a manner so select which of the processing stages (2) the lifting arms (6) will address for each transfer step, while omitting those steps for which transfer is not yet required.

Abstract: A method of formation of a damascene FSG film with good adhesion to silicon nitride in an HDP-CVD system. Silane (SiH4), silicon tetrafluoride (SiF4), oxygen (O2) and argon (Ar) are used as the reactant gases. SiH4, SiF4, and O2 react to form the FSG. Ar is introduced to promote gas dissociation. All four gases are used for depositing most of the FSG film. SiH4 is not used during deposition of the interfacial part of the FSG film. The interfacial part of the FSG film refers either to the topmost portion, if silicon nitride is to be deposited on top of the FSG or the bottom portion if the FSG is to be deposited on top of silicon nitride. Using SiH4 with the SiF4 tends to mitigate the destructive effects of SiF4 throughout most of the deposition. By removing the SiH4 from the deposition of the interfacial part of the FSG film less hydrogen is incorporated into the film in the interfacial region and adhesion to overlying or underlying silicon nitride is improved.

Abstract: After the first workpieces have been processed in the first process portion while the second workpieces are being processed in the second process portion, the first process portion in which the first process condition has been set for the third process condition. By repeating such processes, a plurality of workpieces can be successively processed in different types of process conditions.

Abstract: A processing solution is supplied from processing-solution suppliers onto the surfaces of targets to be processed while a flow rate of the processing solution is being adjusted. The processing solution is fed from a processing-solution supply source at a specific pressure via a processing-solution pressure-up feeder. The pressure of the processing solution fed via the processing-solution pressure-up feeder is adjust to another specific pressure or more at least when the processing-solution suppliers are operating simultaneously. A flow-rate detector detects the flow rate of the processing solution supplied from each processing-solution supplier. A pressure detector detects the pressure of the processing solution fed via the processing-solution pressure-up feeder.

Abstract: A method and apparatus is provided for more efficient application of photoresist to a wafer surface. One aspect of the method comprises applying solvent to the wafer and spinning it to coat the entire wafer surface prior to the application of photoresist. This reduces surface tension on the wafer and reduces the amount of resist required to achieve a high quality film. The apparatus comprises adding a third solenoid and nozzle to the coating unit to accommodate the application of solvent to the center of the wafer surface. The method also describes incorporating a new solvent comprising diacetone alcohol, which is a low-pressure solvent, providing extended process latitudes and reduced material expenditures.

Abstract: An apparatus and method supports thermal processing of a microelectronic device such as a semiconductor chip in a substrate by heating the substrate with secondary radiation from an energy transfer device 40, which has a first set of energy transfer regions comprised of an emissive and thermally conductive material, and a second set of thermally insulating regions comprised of a reduced emissivity and reduced thermal conductivity material or free space. A multi-zone-radiant energy source 30 provides radiative energy to energy transfer device 40, with a process controller 36, preferably a multi-zone controller, altering the amount of energy provided by each heat zone associated with each emissive region of energy transfer device 40. Sensors detect the thermal energy level of each energy transfer region to allow controller 36 to adjust the secondary radiation emitted by each region in real time, resulting in a predetermined and controlled distribution of thermal energy on substrate 20.

Abstract: A reciprocating coating system for coating objects. The reciprocating coating system includes a computer controller for controlling the motion of a coating device, and to allow configuration of system parameters. Configurable parameters include stroke length, stroke center point and stroke speed.

Abstract: A coating apparatus for applying a coating liquid to a printing substrate. The apparatus includes a rotatable first roll, and a rotatable second roll positioned adjacent to the first roll and defining with the first roll a first nip through which the printing substrate passes. The apparatus also has a metering device for applying a layer of coating liquid onto the second roll, which in turn transfers the coating liquid to the printing substrate. The apparatus further has a controller that communicates with at least the second roll, wherein the controller performs the steps of determining whether the idle time of the second roll is longer than a predetermined threshold, setting a pre-spin flag if the idle time of the second roll is longer than a predetermined threshold, and directing the second roll to perform a pre-spin upon the presence of the pre-spin flag.

Abstract: The present invention provides a work station and method for applying a blocking material such as pitch or the like to a selected location on a workpiece or workpieces, wherein the work station includes an automated blocking material dispenser, an X-Y stage for positioning the workpiece(s) and a microprocessor, and wherein the method includes the synchronized operation of the X-Y stage and the dispenser under control of the microprocessor to deposit a selected amount and shape of the blocking material in a selected location or locations on a workpiece or workpieces with a high degree of repeatability in a short cycle time.

Abstract: A programmable electronic fluid dispenser with computer controlled direct drives of a motor, connecting rod, and attached piston in a yringe is used to dispense accurate quantities of liquids with varying viscosities. The pistons are driven to dispense an amount and then the piston is reversed, overcoming any mechanical backlash, to prevent any leakage or oozing from the dispenser tip. A computer controls several dispensers cwith their outputs co-mingled. The desired proportions controlled by the computer driving the pistons.

Abstract: A method and apparatus for operating a matching network within a plasma enhanced semiconductor wafer processing system that uses pulsed power to facilitate plasma processing.

Abstract: A substrate processing apparatus comprising a substrate processing chamber, a gas distribution system operatively coupled to the chamber, a high density plasma power source, a controller operatively coupled to the gas distribution system and the high density plasma power source and a memory coupled to the controller. The memory includes computer instructions embodied in a computer-readable format. The computer instructions comprise (i) instructions that control the gas distribution system to flow a process gas comprising a silane gas, an oxygen-containing source, an inert gas and a hydrogen-containing source that is either molecular hydrogen or a hydride gas that does not include silicon, boron or phosphorus and (ii) instructions that control the high density plasma source to form a plasma having an ion density of at least 1×1011 ions/cm3 from the process gas to deposit the silicon oxide layer over the substrate.

Abstract: An apparatus for depositing seed layers from a group of Cu, Ag or an alloy thereof on a substrate having narrow openings surrounded by a filed; the apparatus comprising a controller, said controller including instructions to deposit a conformal seed layer having a thickness of 50-500 Å oil the filed and to deposit a non-conformal seed layer having a thickness of 100-3000 Å on the filed and to stop depositing the seed layers prior to filling the narrow openings, such that the rermaining narrow openings are filled by electroplating. In accordance with the invention, substantially conformal and non-conformal seed layers me deposited in an apparatus where the conformal and non-conformal seed layer deposition steps can be carried out without breaking vacuum, or without exposing the wafer to the atmosphere between the deposition steps.

Abstract: A method for operating a multi-station processing chamber is described. A wafer is loaded onto the first station then indexed to the second station prior to processing. The indexing causes the wafer to be well-seated on it spindle before being processed. This prevents an improperly seated wafer from being processed at the first station.

Abstract: An oxide and an oxynitride films and their methods of fabrication are described. The oxide or the oxynitride film is grown on a substrate that is placed in a deposition chamber. A silicon source gas (or a silicon source gas with a nitridation source gas) and an oxidation source gas are decomposed in the deposition chamber using a thermal energy source. A silicon oxide (or an oxynitride) film is formed above the substrate wherein total pressure for the deposition chamber is maintained in the range of 50 Torr to 350 Torr and wherein a flow ratio for the silicon source gas (or the silicon source gas with the nitridiation source gas) and the oxidation source gas is in the range of 1:50 to 1:10000 during a deposition process.

Abstract: A method including in a wafer processing environment, introducing a liquid via a carrier gas, and separate from the liquid, introducing a first gas comprising ozone and a legacy amount of oxygen and a second gas comprising an effective amount of oxygen to modify a process operation. A system including a chamber, a liquid source, a first gas source, and a second gas source, a controller configured to control the introduction into the chamber of a liquid from the liquid source, a first gas comprising ozone and a legacy amount of oxygen from the first source, a second gas comprising oxygen from the second gas source, and a memory coupled to the controller comprising a machine-readable medium having a program embodied therein for controlling the second gas to introduce an effective amount of oxygen into the chamber to modify a process operation.

Abstract: A method and apparatus for processing a semiconductor wafer to reduce CD variation feeds back information gathered during inspection of the wafer to a previously visited processing tool and feeds forward information to adjust the next process the wafer will undergo. The inspection and processing are performed at a single processing module without exposing the wafer to ambient atmospheric conditions. Embodiments include removing a wafer from a wafer cassette, and measuring a dimension of a feature on the surface of the wafer, such as the feature's CD using an optical measuring tool. A process, such as an etch process, is then performed on the wafer using a set of process parameter values, such as an etch recipe, selected based on the CD measurement, and the wafer is returned to a cassette. The CD measurements are also linked to photolithography adjustable parameters such as stepper focus and exposure settings.

Abstract: An apparatus for finishing marine vessel surfaces including track-mounted robots, movable relative to the vessel being finished. The robots are controlled by a computer, with each robot having a plurality of tools attachable to the robots both for mapping the surface contours of the vessel and for painting or otherwise finishing the surface.

Abstract: An apparatus and method for depositing thin films. The apparatus generally comprises a process chamber having one or more walls and a lid and two heat exchangers. A first heat exchanger is coupled to the walls and a second heat exchanger is coupled to the lid. The two heat exchangers are configured to provide separate temperature control of the walls and lid. Separate control of the lid and wall temperatures inhibits reaction of the organosilane within the lid while optimizing a reaction within the chamber. The apparatus implements a method, in which a process gas comprising ozone and an organosilane are admitted through the into a processing while a substrate is heated to form a carbon-doped silicon oxide layer over the substrate. During deposition, the lid is kept cooler than the walls.

Abstract: A method is provided for forming a fluorinated silicate glass layer with HDP-CVD having a lower dielectric constant without compromising the mechanical properties of hardness and compressive stress. A gaseous mixture comprising a silicon-containing gas, an oxygen-containing gas, and a fluorine-containing gas is provided to a process chamber. The ratio of the flow rate of the fluorine-containing gas to the flow rate of the silicon-containing gas is greater than 0.65. A high-density plasma is generated from the gaseous mixture by applying a source RF power having a power density less than 12 W/cm2. A bias is applied to a substrate in the process chamber at a bias power density greater than 0.8 W/cm2 and less than 2.4 W/cm2. The fluorinated silicate glass layer is deposited onto the substrate using the high-density plasma.

Abstract: Methods and apparatuses of forming a film on a substrate including introducing a pretreatment material into a processing chamber sufficient to form a film as a portion of an inner surface of the processing chamber to inhibit outgassing from that portion of the chamber, introducing a substrate into the chamber, and forming a film on the substrate.

Abstract: A semiconductor manufacturing apparatus is improved so that apparatus operating condition parameters can be restored to setting values of various levels such as standard, apparatus delivery time or client oriented setting values even if the parameters are overwritten. The semiconductor manufacturing apparatus is constituted by a multi-chamber processing system 4, a transport system 8 of an object and an equipment control unit 210 having a memory apparatus 214 storing the apparatus operating condition parameters and providing the parameters to machine control units 150, 72. The machine control units 150, 72 controls the processing system 4 and the transport system 8 based on the apparatus operating condition parameters.

Abstract: A process and system for use during the growth of a thin film upon the surface of a substrate by exposing the substrate surface ti vaporized material in a high vacuum (HV) facility involves the directing of an electron beam generally toward the surface of the substrate as the substrate is exposed to vaporized material so that electrons are diffracted from the substrate surface by the beam and the monitoring of the pattern of electrons diffracted from the substrate surfaces as vaporized material settles upon the substrate surface. When the monitored pattern achieves a condition indicative of the desired condition of the thin film being grown upon the substrate, the exposure of the substrate to the vaporized materials is shut off of otherwise adjusted. To facilitate the adjustment of the crystallographic orientation of the film relative to the electron beam, the system includes a mechanism for altering the orientation of the surface of the substrate relative to the electron beam.

Abstract: An apparatus of a reactor or processing chamber comprising a chamber having a resistive heater disposed within a volume of the chamber, including a stage having a surface area to support a substrate such as a wafer and a body including at least one heating element, a shaft coupled to the body, a plurality of temperature sensors coupled to the chamber, each configured to measure a temperature at separate points associated with the surface area of the stage, and a motor coupled to the shaft and configured to rotate the resistive heater about an axis through the shaft. In this manner, the temperature sensors may measure a temperature at separate points of the surface area of the stage. A method of rotating a shaft and measuring a plurality of temperatures over the surface area of the stage or over a wafer seated on the stage with the plurality of temperature sensors.

Abstract: A process for low-pressure carbonitriding of steel parts is disclosed according to which the parts are carburized at low pressure between roughly 780° C. and 1050° C., utilizing a carbon releasing gas at a pressure of less than 500 mbars and are subsequently nitrided utilizing a nitrogen releasing gas comprising NH3. The nitrogen releasing gas is fed into the treating chamber at the end of the carburization phase at a temperature range of roughly 780° C. to 950° C., starting from a low pressure and ending at a pressure of less than 1000 mbars, for nitriding the parts.

Abstract: An apparatus for performing in-situ curvature measurement of a substrate during a deposition process is provided which includes a clamp for retaining the substrate near one end while leaving the opposite end free. A plurality of displacement sensors are arranged in a spaced apart fashion along the length of the substrate and are directed to a surface of the substrate opposite a surface to be coated. Each sensor provides a signal to a computer corresponding to a position of the substrate relative to the sensor. The computer receives and stores data from the displacement sensors to determine a stress evolution during a deposition process and to determine a coating modulus based upon a resultant curvature of the substrate.

Abstract: A method and apparatus for depositing a boron insitu doped amorphous or polycrystalline silicon film on a substrate. According to the present invention, a substrate is placed into deposition chamber. A reactant gas mix comprising a silicon source gas, boron source gas, and a carrier gas is fed into the deposition chamber. The carrier gas is fed into the deposition chamber at a rate so that the residence of the carrier gas in the deposition chamber is less then or equal to 3 seconds or alternatively has a velocity of at least 4 inches/sec.

Abstract: A process for forming a thin layer exhibiting a substantially uniform property on an active surface of a semiconductor substrate. The process includes varying the temperature within a reaction chamber while a layer of a material is formed upon the semiconductor substrate. Varying the temperature within the reaction chamber facilitates temperature uniformity across the semiconductor wafer. As a result, a layer forming reaction occurs at a substantially consistent rate over the entire active surface of the semiconductor substrate. The process may also include oscillating the temperature within the reaction chamber while a layer of a material is being formed upon a semiconductor substrate.

Abstract: The construction of a film on a wafer, which is placed in a processing chamber, may be carried out through the following steps. A layer of material is deposited on the wafer. Next, the layer of material is annealed. Once the annealing is completed, the material may be oxidized. Alternatively, the material may be exposed to a silicon gas once the annealing is completed. The deposition, annealing, and either oxidation or silicon gas exposure may all be carried out in the same chamber, without need for removing the wafer from the chamber until all three steps are completed. A semiconductor wafer processing chamber for carrying out such an in-situ construction may include a processing chamber, a showerhead, a wafer support and a rf signal means. The showerhead supplies gases into the processing chamber, while the wafer support supports a wafer in the processing chamber.

Abstract: An apparatus for applying a coating solution to a surface of a substrate to form a coating film of desired thickness thereon. The apparatus includes a rotary supporting device for supporting and spinning the substrate in horizontal posture, a solvent spraying device for spraying a solvent to the substrate, a coating solution supplying device for supplying the coating solution to the substrate, a storage device for storing a processing program stipulating varied points and periods of time, a timer acting as a reference for each point or period of time stored in the storage, and a controller operable to perform controls based on the points and periods of time and with reference to the timer.