Abstract: A method is provided for preparing a substrate for processing in a chamber that has a substrate receiving portion. The substrate is positioned within the chamber in a location not on the substrate receiving portion. A gaseous flow is provided to the chamber, from which a plasma is struck to heat the substrate. After the substrate has been heated, it is moved to the substrate receiving portion for processing.

Abstract: One embodiment of the invention involves introducing at least two metals into a chamber for forming an alloy layer over a substrate. This is accomplished by a variety of methods. In one embodiment, at least two metals are mixed and introduced into a chamber in which a focused ion beam contacts the two metals to form at least one alloy layer over a substrate. In another embodiment, at least two precursor gas sources are introduced into the chamber in which each precursor gas source contains a metal. The focused ion beam contacts the two precursor gases to form an alloy layer over the substrate. In yet another embodiment, a second metal layer is formed over a first metal layer to form a multi-metal layer. Thereafter, thermal treatment or introducing a focused ion beam to at least a portion of the multi-metal layer is performed to create at least one alloy layer over the substrate.

Abstract: Method for processing gallium arsenide (GaAs) wafers is provided. One embodiment of the invention provides a method for processing a substrate comprising disposing the substrate on a substrate support member in a high density plasma chemical vapor deposition chamber, depositing a film onto a surface of the substrate, and after deposition of the film, flowing a heat transfer gas in one or more channels on a substrate support surface of the substrate support member.

Abstract: A plurality of production line recipes and film thickness measurement recipes that recite the same type of coating solution, but different target film thickness are prepared in a coating unit. Recipes that recite the same types of coating solution and the same film thickness are linked to a common spin curve. A film thickness measurement recipe is executed so as to calculate a compensated value for a revolving speed for each measured data of the film thickness. The designated values of revolving speeds of individual recipes can be compensated using the compensated value at a time.

Abstract: A method and apparatus for baking-out and for cooling a vacuum chamber are provided. In a first aspect, an inert gas which conducts heat from the vacuum chamber's bake-out lamps to the shield and from the shield to the other parts within the vacuum chamber is introduced to the chamber during chamber bake-out. The inert gas preferably comprises argon, helium or nitrogen and preferably raises the chamber pressure to about 500 Torr during chamber bake-out. A semiconductor processing apparatus also is provided having a controller programmed to perform the inventive bake-out method. In a second aspect, a process chamber is provided having at least one source of a cooling gas. The cooling gas is input to the chamber and is allowed to thermally communicate with the chamber body and components. The cooling gas may reside in the chamber for a period of time or may be continuously flowed through the chamber. Once the chamber reaches a target temperature the cooling gas is evacuated.

Abstract: A low dielectric constant insulating film on a substrate is formed by introducing a process gas comprising a silicon source, a fluorine source, and oxygen into a chamber. The process gas is formed into a plasma to deposit at least a first portion of the insulating film over the substrate. The wafer and the first portion of the insulating film are then heated to a temperature of about 100-500° C. for a period of time. The film may include several separate portions, the deposition of each of which is followed by a heating step. The film has a low dielectric constant and good gas-fill and stability due to the lack of free fluorine in the film.

Abstract: A chemical vapor deposition system that includes a housing configured to form a processing chamber, a substrate holder configured to hold a substrate within the processing chamber, a gas distribution system configured to introduce gases into the processing chamber, a plasma generation system configured to form a plasma within the processing chamber, a processor operatively coupled to control the gas distribution system and the plasma generation system, and a computer-readable memory coupled to the processor that stores a computer-readable program which directs the operation of the chemical vapor deposition system.

Abstract: The present invention provides an effective barrier layer for improved via fill in high aspect ratio sub-micron apertures at low temperature, particularly at the contact level on a substrate. In one aspect of the invention, a feature is filled by first depositing a barrier layer onto a substrate having high aspect ratio contacts or vias formed thereon. The barrier layer is preferably comprised of Ta, TaNx, W, WNx, or combinations thereof. A CVD conformal metal layer is then deposited over the barrier layer at low temperatures to provide a conformal wetting layer for a PVD metal. Next, a PVD metal layer is deposited onto the previously formed CVD conformal metal layer at a temperature below that of the melting point temperature of the metal to allow flow of the CVD conformal layer and the PVD metal layer into the vias.

Abstract: A sub-atmospheric chemical vapor deposition (“SACVD”) system with a bypass from a dopant source to an exhaust system and related methods and devices. The flow of dopant may be established by dumping the dopant flow directly to the foreline of a vacuum exhaust system of an SACVD system, rather than flowing the dopant through the chamber. Establishing the dopant flow in this manner prior to the deposition of a silicon glass film on a substrate allows the initial portion of the silicon glass film to be doped at a higher level. Prior apparatus resulted in a dopant-deficient region of silicon glass formed before the dopant was fully flowing. In one embodiment, a doped silicon glass film is used as a dopant source for a semiconductor material, in another embodiment, a multi-layer doped silicon glass film achieves superior reflow.

Abstract: A control system for digitally monitoring and/or controlling pressure to a pneumatic load such as a stop/suckback valve. Pressure is sensed in the pneumatic fluid input lines to the pneumatic load, and a closed loop control is used to maintain the pressure at a predetermined level. In an alternative embodiment, the control system is used to ensure equal dispensing in multi-point dispense apparatus. Thus, pressure is sensed downstream of each valve in fluid communication with a respective nozzle. Any pressure differential detected is corrected by appropriate valve adjustment.

Abstract: A method and apparatus for improving the adhesion of a copper layer to an underlying layer on a wafer. The layer of copper is formed over a layer of material on a wafer and the copper layer impacted with ions to improve its adhesion to the underlying layer.

Abstract: The present invention provides systems, methods and apparatus for high temperature (at least about 500-800° C.) processing of semiconductor wafers. The systems, methods and apparatus of the present invention allow multiple process steps to be performed in situ in the same chamber to reduce total processing time and to ensure high quality processing for high aspect ratio devices. Performing multiple process steps in the same chamber also increases the control of the process parameters and reduces device damage. In particular, the present invention can provide high temperature deposition, heating and efficient cleaning for forming dielectric films having thickness uniformity, good gap fill capability, high density, low moisture, and other desired characteristics.

Abstract: The present invention provides systems, methods and apparatus for high temperature (at least about 500-800° C.) processing of semiconductor wafers. The systems, methods and apparatus of the present invention allow multiple process steps to be performed in situ in the same chamber to reduce total processing time and to ensure high quality processing for high aspect ratio devices. Performing multiple process steps in the same chamber also increases the control of the process parameters and reduces device damage. In particular, the present invention can provide high temperature deposition, heating and efficient cleaning for forming dielectric films having thickness uniformity, good gap fill capability, high density, low moisture, and other desired characteristics.

Abstract: This invention provides a stable process for depositing films which include silicon and nitrogen, such as antireflective coatings of silicon oxynitride. Nitrogen is employed to permit lower flow rates of the process gas containing silicon, thereby reducing the deposition rate and providing better control of film thickness. Additionally, the use of nitrogen stabilizes the process, improving film uniformity, and provides a higher-quality film. The invention is capable of providing more accurate and easier fabrication of structures requiring uniformly thin films containing silicon, nitrogen, and, optionally, oxygen, such as antireflective coatings.

Abstract: The invention relates to an improved design for a spray gun and application system for cold gas dynamic spraying of a metal, alloy, polymer, or mechanical mixtures thereof. The gun includes a rear housing comprising a powder inlet and a gas inlet, a front housing removably affixed to the rear housing and comprising an mixing cavity therein for mixing of the powder and gas and an exit therefrom, a nozzle holder having a bore disposed therethrough and removably affixed to the front housing, and a nozzle positioned within the nozzle holder, an interior taper of the nozzle holder bore complementing an exterior taper of the nozzle, said nozzle having an initially converging, subsequently diverging centrally disposed bore therein adapted to receive the mixed powder and gas from the mixing chamber.

Abstract: A method and apparatus for reducing surface sensitivity of a TEOS/O3 SACVD silicon oxide layer, formed over a substrate, that deposits a ramp layer while ramping pressure to a target deposition pressure and deposits an SACVD layer over the ramp layer. In one embodiment, the flow of ozone is stopped during the pressure ramp-up to control the thickness of the ramp layer.

Abstract: An improved vertical diffusion furnace for semiconductor manufacturing processes is provided. Temperature and flow rate management enables more uniform temperature distribution across the wafer during ramp up and ramp down, thereby preventing wafer warp.

Abstract: A method and apparatus for depositing a layer having improved film quality at an interface. The method includes the steps of introducing an inert gas into a processing chamber and forming a plasma from the inert gas by applying RF power to the chamber at a selected rate of increase. After RF power has reached full power, a process gas including a reactant gas is introduced to deposit the layer. In a preferred embodiment, the reactant gas is tetraethoxysilane. In another preferred embodiment, the process gas further includes fluorine.

Abstract: A layer of tungsten nitride is deposited on the upper surface of a wafer. The deposition is performed by providing a gaseous mixture and providing energy to the gaseous mixture to form a plasma. The gaseous mixture includes a first gaseous composition containing tungsten and a second gaseous composition containing nitrogen and hydrogen. The second gaseous composition is one that does not have a gas phase reaction with the first gaseous composition to form tungsten nitride, unless energy is provided to the gaseous mixture. The first gaseous composition may be tungsten hexafluoride (WF6). The gaseous mixture may be infused with energy to form a plasma by providing it with energy from an rf signal. In the plasma, the nitrogen dissociates into nitrogen ions, and the tungsten separates from the fluorine. The nitrogen ions and tungsten then combine to form tungsten nitride (W2N), which deposits on the wafer's upper surface.

Abstract: A method and an apparatus for increasing a deposition rate of dielectric films deposited on a substrate for a given temperature while providing the same with good step coverage and gap-fill properties. This is achieved by employing bistertiarybutylaminesilane as a silicon source to react with an oxidizing agent to form a dielectric film on a substrate that includes silicon.

Abstract: A can component (3) is coated with a coating material (2) in a manner which involves determining the number of can components to which the coating material is applied, determining the total amount of coating material applied to the can components, and determining, on the basis of the number of can components and the total amount of coating material applied, the average amount of coating material applied to each can component. In this way it is possible to determine whether the correct amount of coating is being applied to the can components.

Abstract: A wet-oxidation apparatus comprises a reaction tube capable of accommodating a semiconductor wafer; a water vapor generating apparatus for generating water vapor; a gas supply passage for supplying gas into the reaction tube; a discharge passage; an inert gas supply unit for supplying an inert gas; a gas switching unit capable of switching between the water vapor from the water vapor generating unit and the inert gas from the inert gas supply unit, so as to supply either one of the water vapor and the inert gas to the gas supply passage; and a control unit controlling such that: at least while wet-oxidation processing of the semiconductor wafer are conducted predetermined times in the reaction tube, the water vapor generating apparatus continuously generates the water vapor; whenever the wet-oxidation processing is started one time, the water vapor from the water vapor generating apparatus is switched toward the gas supply passage; and whenever the wet-oxidation processing is completed one time, the water vap

Abstract: A control apparatus comprises a plurality of process units operating in accordance with parameters, a storing section for storing parameters relevant to processings by the process units, a touch screen for setting predetermined parameters for the process units, and a parameter administration section. The parameter administration section sends corresponding one of the stored parameters to one of the process units in reply to a request issued thereby, transfers the set parameter to the process unit, and rewrites the parameters stored in the storing section to the parameters set by the setting section.

Abstract: A gate electrode connection structure formed by deposition of a tungsten nitride barrier layer and a tungsten plug, where the tungsten nitride and tungsten deposition are accomplished in situ in the same chemical vapor deposition (CVD) chamber. The tungsten nitride deposition is performed by plasma enhanced chemical vapor deposition (PECVD) using a plasma containing hydrogen, nitrogen and tungsten hexafluoride. Before deposition the wafer is pretreated with a hydrogen plasma to improve adhesion. The tungsten deposition process may be done by CVD using tungsten hexafluoride and hydrogen. A tungsten nucleation step is included in which a process gas including a tungsten hexafluoride, diborane and hydrogen are flowed into a deposition zone of a substrate processing chamber. Following the nucleation step, the diborane is shut off while the pressure level and other process parameters are maintained at conditions suitable for bulk deposition of tungsten.

Abstract: A control apparatus comprises a plurality of process units operating in accordance with parameters, a storing section for storing parameters relevant to processings by the process units, a touch screen for setting predetermined parameters for the process units, and a parameter administration section. The parameter administration section sends corresponding one of the stored parameters to one of the process units in reply to a request issued thereby, transfers the set parameter to the process unit, and rewrites the parameters stored in the storing section to the parameters set by the setting section.

Abstract: A sequence of process steps forms a fluorinated silicon glass (FSG) layer on a substrate. This layer is much less likely to form a haze or bubbles in the layer, and is less likely to desorb water vapor during subsequent processing steps than other FSG layers. An undoped silicon glass (USG) liner protects the substrate from corrosive attack. The USG liner and FSG layers are deposited on a relatively hot wafer surface and can fill trenches on the substrate as narrow as 0.8 &mgr;m with an aspect ratio of up to 4.5:1.

Abstract: An apparatus of cleaning a nozzle comprising a mounting table for mounting a substrate to be processed, a process liquid nozzle having a liquid output portion for outputting a process liquid toward the substrate mounted on the table, a nozzle cleaning mechanism having a fluid spray portion for spraying a cleaning fluid onto the liquid output portion of the process liquid nozzle to remove an attached material from the liquid output portion by the cleaning fluid sprayed from the fluid spray portion, and a nozzle moving mechanism for moving the process liquid nozzle between the mounting table and the nozzle cleaning mechanism.

Abstract: A method and apparatus for depositing an etch stop layer. The method begins by introducing process gases into a processing chamber in which a substrate is disposed. An etch stop layer is then deposited over the substrate. An overlying layer is then deposited over the etch stop layer. The etch stop layer substantially protects underlying materials from the etchants used in patterning the overlying layer. Moreover, the etch stop layer also possesses advantageous optical characteristics, making it suitable for use as an antireflective coating in the patterning of layers underlying the etch stop layer.

Abstract: An apparatus and process for limiting residue remaining after the etching of metal in a semiconductor manufacturing process, such as etching back a tungsten layer to form tungsten plugs, by passivating the surface of a wafer with a halogen-containing gas are disclosed. The wafer is exposed to the halogen-containing gas in a chamber before a metal layer is deposited on the wafer. The exposure can occur in the same chamber as the metal deposition, or a different chamber. The wafer can remain in the chamber or be moved to another chamber for etching after exposure and deposition.

Abstract: A photo-fiber link glue control system (10) for accurately placing a pattern of glue on a sequential series of targets traveling with a conveyor (54) through the system (10). The system (10) includes an air reservoir (18) and a glue tank (24) for storing glue to be applied to the series of targets. A glue head (32) is connected to receive glue from the glue tank (24) for application to the series of targets. The lead and trailing edge of the target is detected by photo-eye sensors (44, 46) which generate a target position signal indicative of the sensed position. The pressure within the air reservoir (18) and glue tank (24) are monitored and a control device (36) stores a pattern in which the glue is to be applied to the target.

Abstract: A conveyor system for transporting parts through a plurality of processing areas. The conveyor system comprises a plurality of conveyors, each of the conveyors for transporting parts through an associated one of the processing areas. Each of the conveyors are driven by a motor. Each of a plurality of sensors are associated with one of the plurality of processing areas. Each of a plurality of control interfaces are associated with a device in one of the plurality of processing areas. Each of a plurality of control circuits are associated with one of the plurality of processing areas and coupled to corresponding sensors and corresponding interfaces. At least one operator interface is coupled to the plurality of control circuits. Wherein, the operator interface can modularly control and monitor devices within the plurality of processing areas.

Abstract: The present invention provides systems, methods and apparatus for high temperature (at least about 500-800.degree. C.) processing of semiconductor wafers. The systems, methods and apparatus of the present invention allow multiple process steps to be performed in situ in the same chamber to reduce total processing time and to ensure high quality processing for high aspect ratio devices. Performing multiple process steps in the same chamber also increases the control of the process parameters and reduces device damage. In particular, the present invention can provide high temperature deposition, heating and efficient cleaning for forming dielectric films having thickness uniformity, good gap fill capability, high density, low moisture, and other desired characteristics.

Abstract: A global positioning system (GPS) controlled paint spray system. The system includes a paint sprayer driver program and a GPS paint sprayer. The paint sprayer driver program enables a user of a standard drawing program using a standard personal computer to generate a print file for a drawing pattern. The GPS paint sprayer includes a GPS receiver, a geographical converter for enabling a user to convert the drawing pattern to geographical locations, a location comparator for detecting a location match between the geographical locations of the drawing pattern and a current GPS-based location, and a spray nozzle to spraying paint for matched locations.

Abstract: A method of supplying a treating solution based on a prestored processing program with a plurality of instructions including a supply start instruction and a supply stop instruction for performing a series of processes. The method includes the steps of executing the supply start instruction to supply the treating solution to a central region of a substrate, executing the supply stop instruction to stop supplying the treating solution when the treating solution has been supplied in a fixed quantity/and executing subsequent instructions in the processing program in response to an actual stoppage in delivering the treating solution following execution of the supply stop instruction.

Abstract: The invention provides method and apparatus that control the thermal environment of the first substrate or substrate of series of substrates treated by a uniform direct-plasma, in order to reduce first-wafer effect. By providing supplemental heat to the substrate in treatment or, equivalently, reducing the rate of heat extraction from the substrate in treatment, early in the series, the invention creates steady-state process conditions that reduce substrate-to-substrate variability in process outcome.

Abstract: A control apparatus and method for a coating device utilize a measurement system to determine whether a body supplied to the coating device is acceptable for coating and/or to establish template data in preparation for a coating operation. The measurement system also obtains measurements of a body while the body is being coated, and these measurements are used to control the coating operation.

Abstract: A paste applicator for drawing a paste film in a desired pattern on a substrate, including a table for detachably supporting a substrate, a paste reservoir tube to be filled with a paste, and a nozzle communicating with the paste reservoir and having a paste discharging port opposing to an upper surface of the substrate mounted on the table. A device is supplied for changing the relative positional relationship between the nozzle and the substrate mounted on the table. The paste is applied onto the substrate to form a desired pattern of the paste. A measuring device measures a position of a paste discharging port of a nozzle exchanged together with the paste reservoir tube by using a paste pattern formed by applying the paste onto the substrate held on the table using the exchanged nozzle. The center of the paste pattern nearly agrees with the center of the paste discharging port.

Abstract: An artificial seed manufacturing apparatus in which enclosures can be inserted into capsules without fail, and the diameter of the capsule can automatically be controlled. This apparatus comprises: an enclosure supply mechanism with a container, a tip, and a driving source; a coating material delivery mechanism with a passage, a pressure plunger, a hollow nozzle plunger, and a stepping motor; and a control unit for controlling the enclosure supply mechanism and the coating material delivery mechanism, comprising: moving distance storing means for erasably storing setting data which are inputted through setting operation to designate moving distance of the pressure plunger; and stepping motor control means for supplying driving pulse, the stepping motor control means allowing the pressure plunger to reciprocate by the moving distance, to the stepping motor based on the data stored in the moving distance storing means.

Abstract: A method and apparatus for applying an electronic component adhesive with a minimum length of time for setting a proper application condition. Variation of application shapes of each type of the adhesive is monitored under various different application conditions and its resultant data is saved. When a desired application shape is inputted, the application nozzles are automatically controlled to apply desired doses of the adhesive under an optimum application condition which is defined by retrieving the data previously stored. Also, various different application shapes for bonding respective electronic components may be determined and saved in advance, so that a proper application condition can be automatically determined by retrieving the data on the application shapes when a desired electronic component is selected.

Abstract: The invention provides an adhesive applying method which makes it possible to perform a stabilized adhesive applying operation and to reduce the overall production time. In detecting the amount of adhesive applied and performing a corrective operation so as to ensure application of a predetermined amount of adhesive, a corrected value obtained by a corrective operation is stored at step #5. At step #7, an infinitesimal correction formula which shows the relationship of the corrected value with respect to the amount of adhesive used is found on the basis of the corrected values stored last time and this time and on the basis of the amount of adhesive used during the time from the preceding corrective operation and the current corrective operation. And a productive corrected value found by the infinitesimal correction formula is used for adhesive application from the next time on.

Abstract: An oxidizing gas containing water vapor generated by hydrogen combustion is introduced from an external gas burner via gas supply pipes into the upper space of a process tube surrounded by a heater, and exhausted from the lower part of the process tube. Until the flame of hydrogen burnt in the external gas burner becomes stable, a dilute gas such as N.sub.2 is introduced into the upper space of the process tube via other gas supply pipes so as to suppress the initial oxidation. Suppressing the initial oxidation may also be performed by bypassing an oxidizing gas from the external gas burner to an exhaust system while introducing a non-oxidizing gas such as N.sub.2 into the upper space of the process tube.

Abstract: A system for producing three dimensional components by bonding together successive layers of a porous material with droplets of a binder material. A binder printhead has an array of nozzles which controllably supply jets of binder material droplets to the layers of porous material. The printhead is scanned in a raster scan fashion over each layer of porous material along a first scan axis in one direction to provide first fast scanning paths of droplets. The printhead is then moved laterally of such one direction and is then moved along the fast-scan axis in the opposite direction to provide second fast scanning paths of droplets which are interlaced with the first scanning paths. The supply of the droplets to the porous material can be controlled so as to control the overlapping thereof to produce various desired surface and interior characteristics of the components.

Abstract: A computer controlled method for high speed viscous fluid dispensing includes the steps of providing a dot generator and moving the dot generator along at least X and Y axes. The dot generator is controlled to repeatedly eject jets of viscous fluid that break away from the dot generator as a result of their forward momentum and fly to the surface of an adjacent substrate to create dots. The method may further comprise the step of monitoring the size and location of the dots through a vision system. The method may further comprise the steps of assigning dot sizes to specific components based on user specifications or a component library. The method may further comprise the step of optimizing the dot placement paths by aligning the in-line points of dot formation.

Abstract: A plurality of wafers are placed on a boat, and the boat is inserted into a reactor. The reactor is heated by a heater, thereby heating the inserted wafers. Then, air is supplied between the reactor and the heater through the fan nozzles of a fan unit, thereby cooling the heater quickly at a rate of 17.degree. C./min. PH.sub.3 and SiH.sub.4 gases are introduced into the reactor through first and second gas nozzles, only while the average temperature of a peripheral portion of each wafer remains 30.degree. C. lower than that of a central portion of the same. Thereafter, when the temperature difference between the peripheral and central portions has become lower than 30.degree. C., the supply of PH.sub.3 and SiH.sub.4 gases is stopped. Thus, a polycrystal silicon film is formed on each wafer.

Abstract: A method of and apparatus for depositing a silicon oxide layer onto a wafer or substrate is provided. The present method includes introducing into a processing chamber a process gas including silicon, oxygen, boron, phosphorus and germanium to form a germanium doped BPSG oxide layer having a reflow temperature of less than 800.degree. C. Preferred embodiments of the present method are performed in either a subatmospheric CVD or a plasma enhanced CVD processing apparatus.

Abstract: An apparatus for applying a paste to a surface of a substrate by holding the substrate on a table and by moving a nozzle relative to the table to form a desired paste pattern on the substrate. The apparatus has a device for measuring the position of a paste ejection orifice of the nozzle, a processing unit for calculating, from a result of the measurement by the measuring device, a displacement of the position of the paste ejection orifice when the nozzle is changed, and a mechanism for positioning the substrate at a desired position with respect to the ejection orifice of the changed nozzle on the basis of a result of the operation of the processsing unit. With this arrangement, even if the position of the ejection orifice of the nozzle is changed when the nozzle is changed, the desired positional relationship between the nozzle and the substrate can be set with improved accuracy, whereby a paste pattern can be drawn accurately.

Abstract: An apparatus for continuously applying a coating to a running web, includes an elastic doctor blade having first and second ends, a frontal side adapted to be oriented towards the web and a reverse side opposite the frontal side and adapted to be oriented away from the web. The apparatus further has a clamping device firmly holding the doctor blade by engagement therewith in a zone of the first end. The clamping device positions the doctor blade for contacting the web at the second end along a scraping line. The apparatus also has an inflatable actuator engaging the reverse side of the doctor blade between the clamping device and the first end of the doctor blade. The actuator has a pressurized state in which a surface portion of the actuator is enlarged by an inflating fluid towards the reverse side of the doctor blade for pressing it against the web. A fluid pressure source is connected to the inflatable actuator.

Abstract: A process and device are disclosed for dyeing histological specimens arranged on microscope slides. The microscope slides are transported by a conveyor (18) in object slide holders to processing stations (16) where they are subjected to processing steps that correspond to a selectable dyeing process. The conveyor (18) is designed in such a way that each object slide holder (14) is separated therefrom after entering a processing station (16), so that during the time a processing step is carried out in said processing station other object slide holders (14) can be transported to free processing stations (16) according to the selected dyeing process.

Abstract: Lenses are brought individually or in pairs on a transport device (12) to a continuous vacuum apparatus (1) equipped with a rotating substrate carrier (3). The eyeglass lenses (13) are introduced through a system of locks (15) into the continuous vacuum apparatus (1), where they are coated in at least one controllable coating station (5, 6, 7) with at least one transparent layer and then sent back to the transport device (12). The eyeglass lenses (13) are given codes (18), and the codes are read by a code reader (19). The coating parameters of the individual coating stations (5, 6, 7) and the drive of the substrate carrier (3) are controlled by the code reader (19).

Abstract: A method of application of finning preventive agent in an apparatus for casting anodes for electrolyzing copper by pouring molten copper into the molds, in which the inner planes of the molds can be coated with the finning preventive agent in a reliable and efficient manner, is provided. Before pouring molten copper into the molds, silicon oil is automatically applied to the inner planes 2a.sub.1, to 2a.sub.10 of the molds M dividedly in three applications by industrial robots 24, 25 of a vertical multi-articulate type having brushes 30. An amount of silicon oil consumed is 4 to 10 cc for one mold.