Abstract: A substrate processing apparatus includes a processing chamber configured to process a substrate having a front surface including a dielectric, a substrate support member provided within the processing chamber to support the substrate, a microwave supplying unit configured to supply a microwave to a front surface side of the substrate supported on the substrate support member; and a conductive substrate cooling unit which is provided at a rear surface side of the substrate supported on the substrate support member and has an opposing surface facing the rear surface of the substrate. A distance between the top of the substrate support member and the opposing surface of the substrate cooling unit corresponds to an odd multiple of ¼ wavelength of the microwave supplied when the substrate is processed.

Abstract: A vertical laser cladding system is particularly effective for the interior surfaces of tube-like structures. The vertical cladding process works from bottom to top, so that previously clad layers form a shelf for subsequent application of cladding powder. This system is also particularly effective for handling double-bore plasticating barrels.

Abstract: An automated powder-coating system and method is provided. A series of conveyor belts are arranged end to end to transition one or more work pieces between the conveyor belts. Sensors are used to determine the current location of a work piece with respect to the series of conveyor belts. An induction heating coil for preheating work pieces and a powder-coating apparatus for powder coating work pieces are located adjacent to the conveyor belts. A control unit independently starts and stops the individual conveyor belts based on the current location of the work piece. A cooling area may also be included in the powder-coating system. The powder-coating system and method may be used to powder coat varying lengths of work pieces.

Abstract: Provided is a substrate processing apparatus capable of suppressing inferiority when heat treatment is controlled using a temperature sensor.

Abstract: A platform assembly for use in a digital manufacturing system, where the platform assembly comprises a deformable platform having a surface configured to operably receive a deposited material from a deposition head, and at least one mechanism configured to adjust at least a portion of the first surface to compensate for at least one vertical deviation from at least one horizontal axis that the deposition head is directed to move in.

Abstract: The invention relates to a device for treating packaging means, particularly in the form of bottles and similar containers, comprising a conveying element that can be used to move the packaging means past at least one treatment module provided on at least one operating position, which module can be coupled to and decoupled from the treatment position, and mechanical coupling and/or centering means determining the position of the at least one treatment module after docking. The invention is characterized in that, in order to detect possible deviations of the treatment module coupled to the treatment machine from the target position, and/or to realign the coupled treatment module into the target position, at least one optical centering and adjusting means is provided, some of the functional elements of which are provided on the treatment module, and some are provided on the treatment machine.

Abstract: An activator means for use in activating or re-activating adhesive and sealant compositions that have been pre-applied to a bonding surface prior to mating said bonding surface said means having a plurality of features for directly acting upon the pre-applied composition.

Abstract: A surface wave plasma CVD apparatus includes a waveguide that is connected to a microwave source and formed of a plurality of slot antennae; a dielectric member that introduces microwaves emitted from the plurality of slot antennae into a plasma processing chamber to generate surface wave plasma; a moving device that reciprocatory moves a substrate-like subject of film formation such that the subject of film formation passes a film formation processing region that faces the dielectric member; and a control device that controls the reciprocatory movement of the subject of film formation by the moving device depending on film forming conditions to perform film formation on the subject of film formation.

Abstract: The present invention provides a liquid crystal (LC) coating apparatus and an LC coating method. The LC coating apparatus comprises a plurality of liquid crystal coating devices, at least one real-time detector and a controller. The LC coating method comprises the following steps: utilizing the LC coating devices to coat a LC on a substrate; utilizing the real-time detector to real-time detect the LC coated on the substrate and outputting a detection signal; and utilizing the controller to control the LC coating devices according to the detection signal. The present invention can real-time monitor the coating status of the LC for coating and forming a uniform LC film.

Abstract: Systems, methods and apparatus for regulating ion energies in a plasma chamber and chucking a substrate to a substrate support are disclosed. An exemplary method includes placing a substrate in a plasma chamber, forming a plasma in the plasma chamber, controllably switching power to the substrate so as to apply a periodic voltage function to the substrate, and modulating, over multiple cycles of the periodic voltage function, the periodic voltage function responsive to a desired distribution of energies of ions at the surface of the substrate so as to effectuate the desired distribution of ion energies on a time-averaged basis.

Abstract: Methods and systems for controlling temperatures in plasma processing chamber for a wide range of setpoint temperatures and reduced energy consumption. Temperature control is coordinated between a coolant liquid loop and a heat source by a control algorithm implemented by the plasma processing module controller. The control algorithm may completely stop the flow of coolant liquid to a temperature-controlled component in response to a feedback signal indicating an actual temperature is below the setpoint temperature. The control algorithm may further be based at least in part on a feedforward control signal derived from a plasma power or change in plasma power input into the processing chamber during process recipe execution.

Abstract: A sound insulation member is detachably attached to a bottom of a printer main body to shield a noise in the printer main body. The sound insulation member is detached from the printer main body when an option sheet feeding apparatus is added. When the sound insulation member is not detached from the printer main body in adding the option sheet feeding apparatus, the sound insulation member enters a recess that is provided on an upper surface of the option sheet feeding apparatus.

Abstract: A film forming apparatus which forms a film on a substrate by utilizing a chemical solution, including: a correlation data creating unit which creates a correlation data that is related to the quality of a chemical solution, from data that is related to the properties of the chemical solution including at least one of data on storage temperature for the chemical solution to be loaded and data on pressure applied to the chemical solution to be loaded; and a determining unit which determines whether or not the chemical solution holds expected quality thereof on the bases of the correlation data.

Abstract: Methods and systems for forming modified metal coatings on a gas turbine engine component (20). The gas turbine engine component (20) is placed inside a container (50) having a known volume, along with a source material (32) containing a secondary element. The container (50), gas turbine engine component (20), and the source material (32) inside the container are placed into an oxygen-depleted space (18) inside a reaction chamber (12). At least one temperature for the source material (32) is determined based upon the known volume of the container (50) and an amount of the source material (32). While in the oxygen-depleted space (18), the source material (32) is heated to the at least one temperature sufficient to release a vapor phase reactant (35) containing the secondary element.

Abstract: A vaporizing apparatus includes a heating plate disposed in a container to heat and vaporize a liquid chemical, a gas supply unit configured to supply a carrier gas carrying the chemical vaporized by the heating plate, into the container, a first detecting unit configured to detect the supply of the carrier gas into the container, and a second detecting unit configured to detect the vaporization of the liquid chemical by the heating plate.

Abstract: According to this embodiment, a semiconductor substrate manufacturing apparatus for epitaxial growth in which gases are supplied to a wafer placed on a susceptor and in which a heater is provided on the back surface of the susceptor. As a result of this epitaxial growth, SiC film is deposited onto the susceptor in the film-forming chamber. The susceptor is then moved into a separate chamber and the SiC film deposited on the susceptor during the epitaxial process is removed. After removal of SiC film, regeneration of the SiC film of the susceptor occurs. This semiconductor substrate manufacturing apparatus makes it possible to remove film deposited on a susceptor during epitaxial growth that would otherwise limit manufacturing yield.

Abstract: In a method for determining one or more properties of a substrate, scatterometry spectra can be measured from one or more targets on the substrate. Reconstructions of each of said spectra can be performed to derive one or more values for the property of the substrate, by comparing representations of each of the measured spectra with one or more modeled representations of spectra calculated using variable parameter values. At least one parameter in the reconstruction for each spectrum can be linked to the value of the parameter used in the reconstruction for a different spectrum.

Abstract: A method and related system are provided for depositing a dielectric material into voids in one or more of the semiconductor material layers of a photovoltaic (PV) module substrate. A first side of the substrate is exposed to a light source such that light is transmitted through the substrate and any voids in the semiconductor material layers on the opposite side of the substrate. The light transmitted through the voids is detected and a printer is registered to the pattern of detected light to print a dielectric material and fill the voids.

Abstract: A deposition system includes a load lock chamber for receiving a substrate and exposing a substrate to a load lock temperature and load lock pressure suitable to prepare a substrate for subsequent low-pressure and high-temperature processing or for ambient temperature and pressure conditions.

Abstract: Methods for matching semiconductor processing chambers using a calibrated spectrometer are disclosed. In one embodiment, plasma attributes are measured for a process in a reference chamber and a process in an aged chamber. Using a calibrated light source, an optical path equivalent to an optical path in a reference chamber and an optical path in an aged chamber can be compared by determining a correction factor. The correction factor is applied to adjust a measured intensity of plasma radiation through the optical path in the aged chamber. Comparing a measured intensity of plasma radiation in the reference chamber and the adjusted measured intensity in the aged chamber provide an indication of changed chamber conditions. A magnitude of change between the two intensities can be used to adjust the process parameters to yield a processed substrate from the aged chamber which matches that of the reference chamber.

Abstract: A thin film deposition apparatus that may be precisely aligned with a substrate during a deposition process, and a method of manufacturing an organic light-emitting display device using the thin film deposition apparatus.

Abstract: An apparatus and method for monitoring precursor flux is disclosed herein. The apparatus comprises an optical cell configured for electromagnetic radiation spectroscopy and has a precursor reservoir or deposition chamber configured to provide a flow of a vapor deposition precursor therethrough, a first inner window sealing a first optical opening in the precursor reservoir or deposition chamber, a first outer window in optical communication with the first inner window, a first vacuum chamber disposed between the first inner window and the first outer window, a second inner window sealing a second optical opening in the precursor reservoir or deposition chamber, a second outer window in optical communication with the second inner window, a second vacuum chamber disposed between the second inner window and the second outer window. Each window being disposed to be in optical communication with one another, a electromagnetic radiation or light source, and an optical detector.

Abstract: A plasma reactor having a reactor chamber and an electrostatic chuck with a surface for holding a workpiece inside the chamber includes a backside gas pressure source coupled to the electrostatic chuck for applying a thermally conductive gas under a selected pressure into a workpiece-surface interface formed whenever a workpiece is held on the surface and an evaporator inside the electrostatic chuck and a refrigeration loop having an expansion valve for controlling flow of coolant through the evaporator. The reactor further includes a temperature sensor in the electrostatic chuck and a memory storing a schedule of changes in RF power or wafer temperature.

Abstract: In a method for testing a negative electrode of a secondary battery, light is irradiate to an active material layer formed on a current collector having a plurality of projections at least on one side thereof, the active material layer including first columnar bodies of active material grown obliquely from the projections. The angle is measured between the reflected light from the active material layer and a normal line parallel to the thickness direction of the current collector.

Abstract: The substrate coating device (10) includes a slit nozzle (1), a first camera (3), a second camera (4), a control section (5), a pump (8), and a pressure control chamber (9). The control section (5) controls the supply of the coating liquid from the pump (8) to the slit nozzle (1) in accordance with the result of comparison between a bead shape imaged by the first camera (3) and a reference shape. The control section (5) also controls the air pressure on the upstream side of the slit nozzle (1) by the pressure control chamber (9) in accordance with the result of comparison between a distance measured from an image taken by the second camera (4) and a reference distance.

Abstract: An apparatus (100) for fabricating a semiconductor thin film includes: substrate surface pretreatment means (101) for pretreating a surface of a substrate; organic layer coating means (102) for coating, with an organic layer, the substrate thus pretreated; focused light irradiation means (103) for irradiating, with focused light, the substrate coated with the organic layer, and for forming a growth-mask layer while controlling layer thickness; first thin film growth means (104) for selectively growing a semiconductor thin film over an area around the growth-mask layer; substrate surface treatment means (105) for, after exposing the surface of the substrate by removing the growth-mask layer, modifying the exposed surface of the substrate; and second thin film growth means (106) for further growing the semiconductor thin film and growing a semiconductor thin film over the modified surface of the substrate.

Abstract: An improved precursor vaporization device and method for vaporizing liquid and solid precursors having a low vapor pressure at a desired precursor temperature includes elements and operating methods for injecting an inert gas boost pulse into a precursor container prior to releasing a precursor pulse to a reaction chamber. An improved ALD system and method for growing thin films having more thickness and thickness uniformity at lower precursor temperatures includes devices and operating methods for injecting an inert gas boost pulse into a precursor container prior to releasing a precursor pulse to a reaction chamber and for releasing a plurality of first precursor pulses into a reaction chamber to react with substrates before releasing a different second precursor pulse into the reaction chamber to react with the substrates.

Abstract: A method and apparatus are provided for monitoring and controlling substrate processing parameters for a cluster tool that utilizes chemical vapor deposition and/or hydride vapor phase epitaxial (HVPE) deposition. In one embodiment, a metal organic chemical vapor deposition (MOCVD) process is used to deposit a Group III-nitride film on a plurality of substrates within a processing chamber. A closed-loop control system performs in-situ monitoring of the Group III-nitride film growth rate and adjusts film growth parameters as required to maintain a target growth rate. In another embodiment, a closed-loop control system performs in-situ monitoring of film growth parameters for multiple processing chambers for one or more film deposition systems.

Abstract: A system for purging a plural component coating application system including: a first pressure regulator for receiving an inert gas, providing the gas at a first pressure; a first valve; a first operator connected to the first valve capable of being controlled by a logic controller; a first check valve; a mixing manifold; a second pressure regulator for receiving an inert gas, providing the gas at a second pressure that is less than the first pressure; a second valve; a second operator connected to the second valve capable of being controlled by a logic controller; a second check valve; a static mixer in fluid communication with the mixing manifold; an outlet from the static mixer for receiving a connection to at least two spraying members; and where the second regulator is capable of providing the second pressure at a pressure that is less than one-fifth of the first pressure.

Abstract: A device for continuously sheathing a ply of threads, said ply being formed by an array of approximately mutually parallel threads. The device includes a thread guide, a coating chamber into which a first feed channel and a second feed channel run, which are independent of each other, connected to a first feed device and to a second feed device respectively and capable of delivering a first material and a second material under pressure and with a defined flow rate, and the outlets of which channels are placed above and below the plane of the ply of threads, and an output die. Pressure-measuring device, connected to a controller for controlling the pressure of each of the feed devices, are placed in the coating chamber facing and in line with each other, on either side of the plane of the ply and in the immediate vicinity of the outlet for the feed channels.

Abstract: A method of forming a nano-particle array by convective assembly and a convective assembly apparatus for the same are provided. The method of forming nano-particle array comprises: coating a plurality of nano-particles by forming a coating layer; performing a first convective assembly by moving a first substrate facing, in parallel to and spaced apart from a second substrate at a desired distance such that a colloidal solution including the coated nano-particles is between the first and second substrate; and performing a second convective assembly for evaporating a solvent by locally heating a surface of the colloidal solution drawn when the first substrate is moved in parallel relative to the second substrate. The present invention provides the method of forming the nano-particle array where nano-particles having a particle size from a few to several tens of nanometers are uniformly arrayed on a large area substrate at a low cost, and the convective assembly apparatus for the same.

Abstract: There is provided a regulating gas suction device, which forms a regulating gas flow for use in preventing air outside a vacuum container trying to invade into the vacuum container through a sealing member that tightly closes a gap between an upper end surface of the vacuum container and a peripheral edge of a top pate being opposed to each other from flowing toward a substrate at a coupling portion between the top plate and the vacuum container.

Abstract: The invention relates to a method and an arrangement in a coating line, in which a fibre (2) is uncoiled from a fibre start (1) by means of a pulling device (5) to an extrusion head (3) that comprises a die part (7) and a torpedo part, by means of which on the surface of a primary coated fibre there is arranged a buffer layer which is in tight contact with the primary coated fibre, and in which method the tightly coated fibre is cooled downstream of the extrusion head (3) in a predetermined manner. First there is determined a target value for line tension by means of the correlation between a line tension and a force required for stripping a buffer layer and the line tension between the extrusion head (3) and the pulling device (5) is measured.

Abstract: An apparatus for performing non-contact material characterization includes a wafer carrier adapted to hold a plurality of substrates and a material characterization device, such as a device for performing photoluminescence spectroscopy. The apparatus is adapted to perform non-contact material characterization on at least a portion of the wafer carrier, including the substrates disposed thereon.

Abstract: There are provided a device for fabricating an electrode by a roll-to-roll process and a method for fabricating an electrode. The device for fabricating an electrode includes an unwinding roll and a winding roll travelling an electrode material; a film forming roll disposed between the unwinding roll and the winding roll allowing the electrode material to travel along a cylindrical surface of the film forming roll and having a cooling unit cooling the electrode material; and an evaporation unit receiving a lithium source and mounted for the received lithium source to form a thin film in the electrode material positioned on the film forming roll. Thereby, the lithium is deposited in a vacuum atmosphere such that the process is simple and the deposition rate and the deposition uniformity of lithium can be improved.

Abstract: Bookbinding apparatus adhesive applicator accurately, briefly controls adhesive temperature to a set value by selecting, in accordance with adhesive initial temperature, one of a plurality of temperature-controller heating modes defining different supply powers and supply durations for supplying power to an adhesive-container heater to control its heating temperature. A sensor detects the temperature of the adhesive in the container at applicator start-up, or on restarting a post-standby applicator. In accordance with the detected temperature, one of the heating modes is selected to heat the adhesive. The applicator warm-up time is thus set in response to the state of the adhesive: If solidified, the adhesive is heated and melted in a maximum supply-power, supply-duration mode; if low-temperature liquefied, it is heated and melted in a second-magnitude supply-power, supply-duration mode; and if the adhesive temperature is high, it is heated and melted in a minimal supply-power, supply-duration mode.

Abstract: A method of coating projections on a patch, the method including, selecting a coating solution viscosity, the viscosity being selected to reduce the degree of capillary action between the patch and the coating solution and immersing at least part of tips of projections in a coating solution having the selected coating solution viscosity such that substantially only tips of the projections are coated.

Abstract: A plasma processing apparatus and a method of manufacturing a semiconductor device which can prevent a discharge from occurring between a substrate such as a semiconductor wafer or the like, and a base material of a lower electrode or a peripheral structure of the base material, and can improve yield and productivity. The plasma processing apparatus includes a processing chamber, a lower electrode, an upper electrode, and a plurality of lifter pins for supporting a substrate to be processed. Each of the lifter pins includes a pin body part and a lid part which is disposed on a top portion of the pin body part and has an outer diameter greater than an outer diameter of the pin body part.

Abstract: To provide a method of manufacturing a powder for dust core capable of preventing generation of secondary particles during a siliconizing treatment and improving quality and productivity of the powder for dust core, a dust core made of the powder for dust core manufactured by the method, and an apparatus for manufacturing the powder for dust core, of a powder mixture comprising a soft magnetic metal powder and a powder for siliconizing including silicon dioxide, only the soft magnetic metal powder is heated by induction heating to transmit heat from the surface of the soft magnetic metal powder to the powder for siliconizing, thereby releasing a silicon element from the powder for siliconizing and diffusing and impregnating the silicon element into the surface of the soft magnetic metal powder to form a silicon impregnated layer.

Abstract: An apparatus for producing polycrystalline silicon in which raw gas including silicon compounds is introduced into a reactor, in which electric current is supplied to silicon seed rods in the reactor so as to heat the silicon seed rods, and in which polycrystalline silicon is deposited on surfaces of the silicon seed rods and grown to rods, the apparatus has: a bell jar having a circumferential wall forming a chamber of the reactor and a jacket covering the circumferential wall, and in which a cooling path formed between the circumferential wall and the jacket that allows cooling medium including water to flow therethrough; a coolant feeding system which is connected to the bell jar so as to feed the cooling medium to the cooling path; a coolant recovering system which is connected to the bell jar so as to recover the cooling medium from the cooling path; a pressure control part controlling a pressure in the cooling path; and a flow-rate control part controlling a flow rate of the cooling medium, wherein the

Abstract: Embodiments of the invention generally provide apparatuses for endpoint detection of dopants. In one embodiment, the apparatus has a plasma chamber containing a body having sidewalls, a lid, and a bottom encompassing an interior volume and a substrate support assembly disposed within the body and having a substrate supporting surface configured to support a substrate. The apparatus also has a processing region disposed between the substrate supporting surface and a gas distribution assembly—which contains a perforated plate disposed above the substrate supporting surface. The apparatus also has a plasma source coupled with the body and configured to form an inductively coupled plasma within the interior region. Additionally, the apparatus has an optical sensor disposed either above or below the substrate supporting surface and coupled with a controller, wherein the controller is configured to derive a current dopant concentration relative to an amount of radiation received by the optical sensor.

Abstract: A position control device (21, 5) that controls a widthwise position of a flexible substrate 1 includes: a pair of upper nip rollers 21 (24, 25) that nip an upper edge portion of the flexible substrate, rotating shafts of the pair of upper nip rollers being inclined so that a rotation direction in a nipping portion thereof faces obliquely upward at a slight bias angle (?) with respect to a conveying direction of the flexible substrate; an upper support mechanism including a movable support member 26 and a fixed support member 27 that support the pair of upper nip rollers so that the pair of upper nip rollers can be rotated and brought close to, or withdrawn from each other; a spring 51 that biases, via the movable support member, one upper nip roller 25 of the pair of upper nip rollers in a direction of pressing against the other upper nip roller 24 of the pair of upper nip rollers; and drive means (56) for displacing the biasing member so as to adjust a nipping pressure of the pair of upper nip rollers.

Abstract: An apparatus for coating a stent includes an optical feedback system used to align a transducer with a stent strut. Once alignment is achieved, the transducer causes a coating to be ejected onto the stent strut and the transducer is moved along the stent strut to coat the stent strut.

Abstract: According to one embodiment, a paste applicator includes a discharger, a driver, a detector, and a controller. The discharger discharges paste material toward a surface of an object to be applied. The driver relatively moves the object to be applied and the discharger along the surface of the object to be applied. The detector detects an application start point of the paste material discharged from the discharger and applied to the surface of the object to be applied. The controller controls the discharger and the driver so that the paste material is applied to the object to be applied in a form of a closed ring. The controller sets an application terminating operation start point of the paste material in accordance with the application start point detected by the detector during the discharge of the paste material.

Abstract: Electrospray methods and systems for coating of objects (e.g., medical devices such as a stent structure) with selected types of coatings (e.g.

Abstract: A pattern formation device includes a conveyance table, a pair of guide rails, a carriage, a plurality of droplet discharge heads, an inspection camera, a camera base, a linear motor, a motor housing case, a moving cable, and a cable housing case. The motor housing case is disposed along the guide rails to accommodate the linear motor and has a guide opening configured and arranged to guide the camera base. The cable housing case is disposed along the motor housing case to accommodate the moving cable and has a window section through which a distal end of the moving cable follows a reciprocal operation of the inspection camera. The cable housing case or one of the guide rails has an exhaust vent to discharge air around the carriage by suction through the window section of the cable housing case or the guide opening of the motor housing case.

Abstract: A magnetic film having excellent uniformity in in-plane distribution of film thickness or sheet resistance is formed when the film is formed by forming a magnetic field on a processing surface of a substrate (21) and performing oblique incidence sputtering by using high discharge power. A sputtering apparatus (1) is provided with a substrate holder (22) for holding rotatably the substrate (21) in the surface direction of the processing surface of the substrate; a substrate magnetic field forming device (30) which is disposed to surround the substrate (21) and forms a magnetic field on the processing surface of the substrate (21); cathodes (41) which are arranged diagonally above the substrate (21) and are supplied with electric discharge power; a position detecting device (23) for detecting a rotation position of the substrate (21) ; and a control device (50) which adjusts the rotation speed of the substrate (21) in accordance with the rotation position detected by the position detecting device (23).

Abstract: A transfer flow is produced in accordance with a process recipe of a process to be carried out. In the transfer flow, a type of modules listed in accordance with a substrate transfer order is associated with a necessary staying time from when the substrate is transferred into a module by a substrate transfer unit to when the substrate is ready to be transferred back to the substrate transfer unit after the corresponding process is finished. A cycle limiting time is determined to be the longest necessary transfer cycle time among those obtained by dividing the necessary staying time by the number of the modules mounted in the coater/developer. The number of the modules to be used is determined to be a value obtained by dividing the necessary staying time by the cycle limiting time or a nearest integer to which the value is raised.

Abstract: A holding device is presented in which a layer which is to be oxidized is processed, in a single-substrate process. The process temperature during the processing is recorded directly at the substrate or at a holding device for the substrate. The process includes introducing a substrate, which bears a layer to be oxidized uncovered in an edge region in a layer stack, into a heating device, passing an oxidation gas onto the substrate, heating the substrate to a process temperature, which is recorded during the processing via a temperature of the holding device which holds the substrate, and controlling the substrate temperature to a desired temperature or temperature curve during the processing.

Abstract: In an automatic matching unit, a controller includes a first and a second matching algorithm. The operating point Zp is moved stepwise toward the matching point Zs with a relatively large pitch by using the first matching algorithm. Further, when the operating point Zp is within the outer proximity range, the operating point Zp is moved stepwise toward the matching point Zs with a relatively small pitch by using the second matching algorithm. In the second matching algorithm, the operating point Zp is moved close to the third reference line TC1S or TC2S perpendicular to the first or second reference line C1S or C2S along, e.g., the route Zp(7)->Zp(8)->Zp(9) on the impedance coordinates. The coordinates of the operating point Zp(9) reaches an available quasi-matching point ZB extremely close to the origin O (the matching point Zs).