Abstract: A dynamic film thickness control system/method and its utilization consisting of a minimum of one mask plate arranged between a substrate and a vapor source. A film thickness control device is utilized for real-time control over deposited film thickness and gradually moves the mask plate according to the film thickness control value acquired by the film thickness control device, enabling the mask plate to mask film zones on the said substrate to achieve the film thickness of a design objective. When the required zones of deposition are masked, the deposition of a particular film layer is completed.

Abstract: A cold spray coating system comprising, a cold spray coating gun having a nozzle member operative to emit a stream of gas and granules of a coating material from a nozzle opening defined by the nozzle member such that the granules of the coating material impact and bond with a first region of a substrate, and a heat source member operative heat the first region of the substrate.

Abstract: The present invention relates to a device arranged to move along a cable (1), preferably a tension cable of a suspension bridge, in order to obstruct covering of snow or ice on the cable. The device (2) comprises a compound (6) that obstructs covering of snow or ice as well as means (10) to coat the cable (1) with the compound (6). In addition, the device comprises sensors arranged to detect how large amount of the compound that is in the container. The sensors detect if the container needs to be replenished, and if so is the case, the device is arranged to automatically move to a replenishing device in order to there replenish more of the compound. The present invention also relates to a method to obstruct covering of snow or ice on a cable (1), preferably a tension cable of a suspension bridge.

Abstract: A substrate processing apparatus includes a heating unit which has a plurality of heaters used to heat a substrate in a first process chamber, a temperature line sensor configured to measure temperatures of the substrate heated by the heating unit while the substrate is conveyed from the first process chamber to a second process chamber, a re-heating unit which has a plurality of heaters used to re-heat the substrate in the second process chamber, and an output control unit which controls an output of the re-heat unit based on the measurement results of the temperature measurement units.

Abstract: A computer readable storage medium storing a program for performing an operation method of a substrate processing apparatus is provided. The operation method includes the steps of introducing a nonreactive gas into the vacuum preparation chamber before the gate valve is opened while the substrate is transferred between the vacuum preparation chamber of the vacuum processing unit and the transfer unit, stopping introducing the nonreactive gas when an inner pressure of the vacuum preparation chamber becomes same as an atmospheric pressure, starting an evacuation process of the corrosive gas in the vacuum preparation chamber and then opening to atmosphere performed by letting the vacuum preparation chamber communicate with an atmosphere, and opening the gate valve after the step of opening to atmosphere.

Abstract: An evaporator cell for evaporating a high-melting material to be evaporated, comprises a crucible for receiving the material to be evaporated, and a heating device with a heating resistor for the resistance heating of the crucible, the heating resistor being provided as an electron emitter for the electron beam heating of the crucible.

Abstract: A dynamic film thickness control system/method and its utilization consisting of a minimum of one mask plate arranged between a substrate and a vapor source. A film thickness control device is utilized for real-time control over deposited film thickness and gradually moves the mask plate according to the film thickness control value acquired by the film thickness control device, enabling the mask plate to mask film zones on the said substrate to achieve the film thickness of a design objective. When the required zones of deposition are masked, the deposition of a particular film layer is completed.

Abstract: A method includes forming a gas-sensitive substrate during a production process by dispensing one or more gas-sensitive materials onto the substrate and drying the one or more gas-sensitive materials on the substrate. The method also includes adjusting the production process based on one or more sensor measurements associated with the substrate and/or the production process. Adjusting the production process could include conditioning air around the substrate so that the conditioned air has one or more specified characteristics and adjusting the one or more specified characteristics based on the one or more sensor measurements. The one or more sensor measurements could include one or more measurements of a moisture content of the substrate. Adjusting the production process could also include adjusting a tension of the substrate. The one or more gas-sensitive materials could be deposited in multiple regions of the substrate, such as along multiple tracks extending lengthwise down the substrate.

Abstract: An insert apparatus for a substrate coating system, the insert apparatus including an insert element for being operated within a coating system, the insert element including a processing bench, the processing bench adapted for receiving a coating tool for applying a coating to a substrate, a carrier for carrying the insert element, a first positioner collaborating with the carrier for inserting the insert element into a processing chamber of the coating system and/or retracting the insert element from the processing chamber, and a second positioner for fine positioning of the insert element within the processing chamber.

Abstract: When a step is delayed, an operator can be rapidly informed of the delay. A substrate processing apparatus comprises a process system configured to process a substrate, a control unit configured to control the process system for performing a plurality of steps, and a manipulation unit configured to monitor progresses of the steps. While the control unit waits for completion of a predetermined one of the steps after the control unit controls the process system to start the predetermined step, if a time elapsing from the start of the predetermined step exceeds an allowable time previously allocated to each of the steps, the control unit transmits an alarm message to the manipulation unit so as to report that the allowable time is exceeded.

Abstract: Apparatus and method for electrostatic charging of a container for an electrostatic coating operation includes a support member for supporting a container during an electrostatic coating operation with the support member comprising a non-metallic conductive material or electrically semiconductive portion that directly contacts a surface of the container. The electrically semiconductive portion comprises non-metallic, resistive or low conductivity material and is coupled to a source of electrical energy such that the container is electrostatically charged to an opposite polarity to offset or reduce electrostatic charge build up produced by the electrostatic coating operation.

Abstract: A system in one embodiment includes a disk; a reservoir having a selectively openable cover; a lubricant in the reservoir; and a sensor for detecting an event or condition that triggers opening of the cover. A method in another embodiment includes determining that a trigger event or a trigger condition is occurring or has occurred in a hard disk drive; opening a cover of a lubricant reservoir for allowing egress of lubricant therefrom upon determining that the trigger event or the trigger condition has occurred; and closing the cover of the lubricant reservoir after a period of time. Additional systems and methods are also presented.

Abstract: A method for forming a ferrite film onto surface of structural member composing a plant, comprises steps of forming a ferrite film onto the wetted surface of the structural member by making contact with a film forming solution containing iron (II) ions, an oxidant for oxidizing the iron (II) ions, and a pH adjustment agent; measuring the amount of the formed ferrite film; and determining completion of the ferrite film formation based on the measured amount of the formed ferrite film. The method for forming the ferrite film onto the surface of the structural member, can shorten the time required for completing the ferrite film forming operations.

Abstract: Provided is a substrate processing apparatus and a method of manufacturing a semiconductor device, which are hard to cause a defect in processing a substrate owing to that a pressure inside a process chamber is not kept constant, and which enable a better processing of a substrate.

Abstract: A lens coating system, which includes a gripper assembly for transferring and loading lenses, further includes one or more features to facilitate improved lens handling within the system. The one or more features includes a sensor assembly that is adapted to detect whether a single blocked lens or a pair of blocked lenses is being loaded by the gripper assembly into a spindle assembly of the system, and/or a sensor assembly that is adapted to detect a displacement of a lens holding element, from which lenses are transferred, by the gripper assembly, when impinged upon by the gripper assembly.

Abstract: Light is irradiated onto a glass substrate of an organic EL element, and the characteristics of an organic film are analyzed. In the sample analyzing apparatus, in such a way that the glass substrate is located on the upper side, the organic EL element is placed on a stage. The light is irradiated towards the glass substrate, and an amplitude ratio and a phase difference which are related to the organic EL element are measured. Also, the sample analyzing apparatus selects a model of a structure corresponding to reflected lights K1 to K3 of the irradiated light and calculates the amplitude ratio and the phase difference. The sample analyzing apparatus compares the measured result and the result calculated from the model, and properly executes the fitting, and determines the best model among the several models and then analyzes the characteristics related to the organic EL element.

Abstract: A method for the continuous production of sandwich baked goods having a high volume of filler includes conveying a bottom base cake, detecting the position of the base cake, and extruding a filler through a die aperture to form a ribbon in response to the detection of the position of the bottom base cake. In response to detection of the base cake, a signal or timing mechanism may activate a guillotine knife or blade to open the die aperture to allow filler to be deposited on the bottom base cake and to close the die aperture to sever or cut the ribbon to a predetermined dimension. The severing prevents further flow of the filler through the die aperture until the next bottom base cake is detected and the die aperture is again opened to allow filler to be deposited on the next bottom base cake.

Abstract: After silicon nitride films have been formed on wafers by a film forming process in a reaction vessel, the reaction vessel is processed by a purging process specified by a purging recipe and compatible with the film forming process to suppress production of gases and particles by removing surface parts of films deposited on the inside surface of the reaction vessel and causative of production of gases and particles. A wafer boat 25 holding a plurality of wafers W is loaded into a reaction vessel 2, and the wafers W are processed by a film forming process specified by a film forming recipe 1 specifying, for example, Si2Cl2 gas and NH3 gas as film forming gases. Subsequently, a purging recipe 1 specifying a purging process compatible to the film forming process is selected automatically, and the reaction vessel 2 is processed by the purging process specified by the purging recipe 1.

Abstract: A chemical vapor deposition reactor and method. Reactive gases, such as gases including a Group III metal source and a Group V metal source, are introduced into a rotating-disc reactor and directed downwardly onto a wafer carrier and substrates which are maintained at an elevated substrate temperature, typically above about 400° C. and normally about 700-1100° C. to deposit a compound such as a III-V semiconductor. The gases are introduced into the reactor at an inlet temperature desirably above about 75° C. and most preferably about 100°-250° C. The walls of the reactor may be at a temperature close to the inlet temperature. Use of an elevated inlet temperature allows the use of a lower rate of rotation of the wafer carrier, a higher operating pressure, lower flow rate, or some combination of these.

Abstract: A platform assembly for use in a digital manufacturing system, where the platform assembly comprises a deformable platform having a surface configured to operably receive a deposited material from a deposition head, and at least one mechanism configured to adjust at least a portion of the first surface to compensate for at least one vertical deviation from at least one horizontal axis that the deposition head is directed to move in.

Abstract: Provided is a nano-fiber manufacturing apparatus which manufactures nano-fibers by an electrostatic explosion, and has a low possibility of explosion even when a flammable solvent is used. The nano-fiber manufacturing apparatus (101) having an ejection unit (110) which ejects solution (200) that is raw material liquid for nano-fibers (200) to a manufacturing space in which the nano-fibers (200) are manufactured by an electrostatic explosion of the solution (200), and a charging unit which charges the solution (200). The nano-fiber manufacturing apparatus (101) includes a gas supply source (103) which supplies safety gas to change an atmosphere of the manufacturing space, in which the solution (200) is ejected, into a low oxygen atmosphere, and a partition (102) which maintains the manufacturing space at a lower oxygen atmosphere than an atmosphere of an outside space of the partition (102).

Abstract: An apparatus for forming an alignment layer comprising: at least one alignment layer forming line having a plurality of alignment layer forming units; a plurality of alignment material coating devices disposed at each alignment layer forming unit and configured to coat an alignment material on a substrate of the corresponding alignment layer forming units; at lest one alignment material supplying unit having a plurality of second alignment material containers for supplying the alignment material to each alignment material coating device; a central supplying unit connected to the at least alignment material supplying unit and having at least one first alignment material container for supplying the alignment material to the at least one alignment material supplying unit; a supplying pipe configured to connect the at least one alignment material supplying unit to the central supplying unit; and a controller configured to measure the remnant amount of alignment material of the at least one alignment material supp

Abstract: Disclosed herein are apparatus and methods for selectively depositing molecular ions on nanoscale substrates such as carbon nanotube arrays using electrospray ionization.

Abstract: The present invention provides an apparatus for fabricating a multi-layer information recording medium including a substrate, plural information recording layers placed on the aforementioned substrate, resin intermediate layers placed between adjacent information recording layers and a resin protective layer placed on all the information recording layers at the side opposite from the aforementioned substrate, the apparatus including an ejecting unit including ink jet nozzles operable to drip minute resin liquid drops onto the aforementioned substrate or the aforementioned information recording layers; and a control unit operable to control the aforementioned ejecting unit, whereby resin layers which form said resin intermediate layers or said resin protective layer are formed on the aforementioned substrate or the aforementioned information recording layers.

Abstract: An edge bead removal device for a spin coater apparatus and methods of edge bead removal that overcome the deficiencies of conventional edge bead removal techniques. The edge bead removal device includes a coater cup and a head situated within the coater cup proximate to a peripheral edge of a substrate. The head is movable in a radial direction relative to an azimuthal axis of a rotatable substrate support inside the coater cup. The position of the head relative to a rim of the peripheral edge is mapped using an optical sensor. When the substrate support rotates the substrate and the head is used to dispense edge bead removal chemical, the radial position of the head is adjusted, as guided by the map, relative to the azimuthal axis to maintain a constant gap between the head and the substrate's peripheral rim.

Abstract: Methods, apparatuses and systems are provided that may be used in performing controlled environment processes on substrate items within in at least one chamber A plurality of substrate items may be arranged at each of a plurality of horizontal levels within a vertically oriented stack of a substrate item holding assembly and moved into a reactor chamber and/or other like chamber and processed.

Abstract: LEDs in an LED display part are arranged so as to have approximately the same placing form as containers. When a chemical solution in a container is exhausted, a corresponding LED of the LED display part lights up. Prior to an operation of replacing the container, an operator allows a bar code reader to read a bar code of an unused container. A bar code reader collator collates the bar code data of the unused container with the bar code data of a container corresponding to the lighting LED, which is already registered in a data base. When the bar code reader collator judges that the chemical solutions in the both containers are identical, the display of the LED is changed from a lighting-up display to a flashing display. This makes it easy to recognize the disposing position of the empty container to be replaced, thereby effectively preventing incorrect replacement of the container.

Abstract: Disclosed is a liquid processing apparatus capable of increasing the number of arranged substrate retainers without increasing the total exhaust amount of the liquid processing apparatus. A N-number (N is an integer identical to or greater than three) of cup bodies are inhaled and exhausted in total exhaust amount E through a plurality of separate exhaustion passage each having a first damper, and through a common exhaustion passage connected in common downstream of the separate exhaustion passages. The first dampers are configured such that an external air is received from the cup body in a first intake amount of external air E1 for one of the cup bodies where a chemical liquid nozzle is placed at a setting location facing a wafer, and an external air is received from each of the other cup bodies in a second intake amount of external air E2 less than the first amount E1 and the intake amount of external air from both each of the other cup bodies and each of branched passages equals (E?E1)/(n?1).

Abstract: A method of continuously transferring a web of material from a large roll to a smaller roll involves the performance of at least one processing step including printing during the continuous transfer of the web of material from the large roll to the smaller roll. A system for performing the method continuously transfers a web of material from a large roll to a smaller roll while performing at least one processing step on the web of material during the continuous transfer thereof.

Abstract: In a coating apparatus, a distributor plate 104 is disposed upstream of a silicon wafer 101 relative to the direction of flow of reactive gas. The distributor plate 104 has therein first through-holes 104a and second through-holes 104b arranged so as not to meet the first through-holes 104a. The reactive gas passes through the first through-holes 104a and flows down toward the silicon wafer 101. Further, a cooling gas passes through the second through-holes 104b.

Abstract: A holding device is presented in which a layer which is to be oxidized is processed, in a single-substrate process. The process temperature during the processing is recorded directly at the substrate or at a holding device for the substrate. The process includes introducing a substrate, which bears a layer to be oxidized uncovered in an edge region in a layer stack, into a heating device, passing an oxidation gas onto the substrate, heating the substrate to a process temperature, which is recorded during the processing via a temperature of the holding device which holds the substrate, and controlling the substrate temperature to a desired temperature or temperature curve during the processing.

Abstract: A method for applying hot melt adhesive powder onto a non-metallic object surface comprises the steps of applying a cleaning agent, applying a conductive liquid, radiating, spraying hot melt adhesive powder; and heating. A system for applying hot melt adhesive powder onto a non-metallic object surface comprises a convey belt, a radiation chamber, a spraying chamber and a heating chamber. The convey belt is used to deliver a non-metallic object treated by a cleaning agent and a conductive liquid through the radiation chamber where the surface of the non-metallic objected is radiated by ultraviolet rays and ozone and then through the spraying chamber where the surface of the non-metallic object is sprayed with charged hot melt adhesive powder, and finally into the heating chamber where the hot melt adhesive powder attached onto the non-metallic object will be melted into a liquid adhesive film ready to be bonded.

Abstract: A display device free from a deterioration in luminescence efficiency is provided. In the display device of the present invention, since an inorganic film is formed after concave parts in which luminescence portions are positioned are filled with a filling film, no crack is formed in the inorganic film. Since the inorganic film is made of a material having high gas tightness and heat conductivity (such as, diamond-like carbon or AlN), water and oxygen will hardly penetrate the luminescence portions, and heat of the luminescence portions will be conducted to the inorganic film, so that the luminescence portions do not reach high temperatures. Further, since a gap between first and second panels is filled with a resin film, the atmosphere does not enter from the outside. Because the luminescence portions are free from damage from water, oxygen and heat, the display device of the present invention has a prolonged life.

Abstract: Chemical vapor deposition processes utilize chemical precursors that allow for the deposition of thin films to be conducted at or near the mass transport limited regime. The processes have high deposition rates yet produce more uniform films, both compositionally and in thickness, than films prepared using conventional chemical precursors. In preferred embodiments, a higher order silane is employed to deposit thin films containing silicon that are useful in the semiconductor industry in various applications such as transistor gate electrodes.

Abstract: In a physical vapor deposition plasma reactor, a multi-frequency impedance controller is coupled between RF ground and one of (a) the bias electrode, (b) the sputter target, the controller providing adjustable impedances at a first set of frequencies, said first set of frequencies including a first set of frequencies to be blocked and a first set of frequencies to be admitted. The first multi-frequency impedance controller includes a set of band pass filters connected in parallel and tuned to said first set of frequencies to be admitted, and a set of notch filters connected in series and tuned to said first set of frequencies to be blocked.

Abstract: During a plasma discharging process, a laser beam having a certain exciting wavelength is applied to a surface of a process substrate, so as to measure, using scattered light, an impurity density and a crystal state on the surface of the process substrate.

Abstract: An electrode assembly for a plasma reaction chamber used in semiconductor substrate processing. The assembly includes an upper showerhead electrode which includes an inner electrode mechanically attached to a backing plate by a clamp ring and an outer electrode attached to the backing plate by a series of spaced apart cam locks. A guard ring surrounds the backing plate and is movable to positions at which openings in the guard ring align with openings in the backing plate so that the cam locks can be rotated with a tool to release cam pins extending upward from the upper face of the outer electrode. To compensate for differential thermal expansion, the clamp ring can include expansion joins at spaced locations which allow the clamp ring to absorb thermal stresses.

Abstract: A silicone application system for a web printing press includes at least one silicone applicator having a first web width application zone and a second web width application zone controlled independently of the first web with application zone. A web printing press and method are also disclosed.

Abstract: A film forming apparatus which forms a film on a substrate by utilizing a chemical solution, including: a correlation data creating unit which creates a correlation data that is related to the quality of a chemical solution, from data that is related to the properties of the chemical solution including at least one of data on storage temperature for the chemical solution to be loaded and data on pressure applied to the chemical solution to be loaded; and a determining unit which determines whether or not the chemical solution holds expected quality thereof on the bases of the correlation data.

Abstract: An amount of leakage of a substrate-cooling gas into a vacuum container is measured by using a flow-rate measuring device so that the flow rate of a diluting gas that is the same as the substrate-cooling gas is controlled by a control device or a plasma doping time is prolonged, in accordance with the amount of leakage.

Abstract: The present invention(s) provide an apparatus and method for processing substrates in a screen printing chamber that can deliver a repeatable and accurate screen printed pattern on one or more processed substrates. In one embodiment, the screen printing chamber is adapted to perform a screen printing process within a portion of a crystalline silicon solar cell production line in which a substrate is patterned with a desired material. In one embodiment, the screen printing chamber is a processing chamber positioned within the Rotary line tool or Softline™ tool available from Baccini S.p.A., which is owned by Applied Materials, Inc. of Santa Clara, Calif.

Abstract: The publication discloses a method for determining a temperature of a substrate, comprising: providing a gas channel that is confined by at least one wall having a certain wall temperature; providing a substrate in said gas channel, proximate to the at least one wall, such that a gap exists between a surface of the substrate and the at least one wall; providing a gas flow with a certain mass flow rate through said gas channel, which gas flow extends at least partially through said gap; determining a pressure drop in the gas flow along the gas channel; and deriving from said pressure drop the temperature of said substrate using a pre-determined relation between the pressure drop along the gas channel, the wall temperature and the temperature of the substrate, at said mass flow rate. Also disclosed is a device for implementing the disclosed method.

Abstract: is provided a substrate processing apparatus capable of stably holding a substrate and properly processing the substrate. The substrate processing apparatus is an apparatus that processes a substrate while rotating the substrate, with a place surface of the substrate being oriented in a horizontal direction. The substrate processing apparatus comprises a table including a rotatable base plate having a plurality of projecting members projected outward, and a rotation driving mechanism that rotates the base plate. The table can rotatably hold the substrate such that the projecting members contact the substrate from below with a gap formed between the substrate and the table. The substrate processing apparatus further comprises a pressure adjusting apparatus including a suction duct line having one end thereof being opened to the gap, and a suction mechanism connected to the other end of the suction duct line.

Abstract: An advance process control (APC) system for a plasma process machine is provided, which includes at least an optical emission spectroscopy (OES) system and an APC analysis apparatus. The OES system is used for monitoring a testing object in the plasma process machine. The APC analysis apparatus is used for analyzing the data received from the OES system.

Abstract: A system and method for cooling and coating optical fiber includes the capability to control the amount of coolant gas that is fed to and recycled through a heat exchanger for cooling the optical fiber. The capability to control the amount of fed and recycled coolant gas includes measuring at least one parameter selected from the thermal conductivity of the coolant gas, the viscosity of the coolant gas, the diameter of the primary coating on the optical fiber, and the power usage of a coating applicator for applying primary coating on the optical fiber.

Abstract: The present invention relates to an apparatus for laser cladding of a curved surface comprising: (a) an elongated arm having first and second ends and defining a chamber through the arm from the first end to the second end; (b) a laser delivery source connected to a focusing lens mounted in a housing within an opening on the first end of the arm for delivering a laser beam through the chamber; (c) a delivery head mounted on the second end of the arm comprised of (i) an enclosure having an inlet for receiving the laser and an outlet for delivering the laser to the curved surface, (ii) a powder nozzle for delivering a cladding powder to an inner surface of the curved surface, and (iii) a reflective surface for reflecting the laser to exit through the outlet; (d) mounting means for rotating the curved surface for the cladding of the curved surface; and (e) indexing means for moving the arm substantially parallel to a longitudinal axis of the curved surface so as to clad the curved surface during the rotation of

Abstract: A method is provided for creating a plurality of substantially uniform nano-scale features in a substantially parallel manner in which an array of micro-lenses is positioned on a surface of a substrate, where each micro-lens includes a hole such that the bottom of the hole corresponds to a portion of the surface of the substrate. A flux of charged particles, e.g., a beam of positive ions of a selected element, is applied to the micro-lens array. The flux of charged particles is focused at selected focal points on the substrate surface at the bottoms of the holes of the micro-lens array. The substrate is tilted at one or more selected angles to displace the locations of the focal points across the substrate surface. By depositing material or etching the surface of the substrate, several substantially uniform nanometer sized features may be rapidly created in each hole on the surface of the substrate in a substantially parallel manner.

Abstract: A photoresist-coating apparatus includes a substrate on which a particle-detecting area and an invalid particle-detecting area are defined, a nozzle discharging photoresist to the substrate and moving along a direction, and a particle-detecting sensor controlling on and off of the nozzle in the particle-detecting area according to presence of particles, wherein in the invalid particle-detecting area, the nozzle operates independently from detection of the particle-detecting sensor.

Abstract: A coating apparatus capable of controlling a mixing ratio includes a spindle motor unit having a spindle with which an upper end portion of a mixing ratio control shaft is engaged, the upper end portion of the control shaft being moved on the spindle in accordance with rotation of the spindle; and a control unit for calculating the mixing ratio of a main coating agent and a hardening agent based on measured flow rates thereof and controlling the rotation of the spindle when the calculated mixing ratio of the main coating agent and the hardening agent falls outside a tolerance range of a preset mixing ratio. The mixing ratio of the main coating agent and the hardening agent is adjusted depending on the positions of the upper end portion of the mixing ratio control shaft on the spindle.

Abstract: A liquid material application device having high space utilization efficiency and having excellent maintainability. In a liquid material application device for applying a liquid material to a desired position on a surface of a workpiece in a box by relatively moving a nozzle for discharging the liquid material and a table on which the workpiece is placed to face the nozzle, the liquid material application device comprises a carrying in/out opening formed in a side surface of the box and allowing the workpiece to be carried in and carried out therethrough, a beam extending toward the carrying in/out opening, an application head movable in the extending direction of the beam, beam moving means for moving the beam above and in parallel to the table, and a control unit for controlling operations of the aforesaid components.