Abstract: Around hearths 30a and 30b placed inside a vacuum chamber 11, auxiliary hearths 31a and 31b with annular permanent magnets included therein are arranged. Orientations of magnetic poles of annular permanent magnets 21a and 21b provided in two adjacent plasma guns 1A and 2B, orientations of magnetic poles of two adjacent electromagnetic coils 22a and 22b, orientations of two adjacent steering coils 24a and 24b, and orientations of magnetic poles of the two adjacent annular permanent magnets included in the two hearths are reversed from each other.

Abstract: An improvement in an apparatus having an external casing defining a processing chamber for deposition of a film on a substrate and an opening in the processing chamber through which a substrate is introduced for deposition is described. The improvement comprises an internal casing member moveably mounted within the processing chamber for movement between a first position which allows deposition onto the substrate to occur and a second position at which the casing is in sealing engagement with the opening to form an isolation chamber within the processing chamber and effective to isolate the substrate from processing chamber. The invention also includes a method for reducing cross-contamination between processing chambers in such an apparatus and a method for reducing particulate contamination to media prepared in such a deposition apparatus.

Abstract: In order to form a single-crystalline thin film on a polycrystalline substrate using plasma CVD, a downwardly directed mainly neutral Ne atom current is formed by an ECR ion generator (2). A reaction gas such as silane gas which is supplied from a reaction gas inlet pipe (13) is sprayed onto an SiO.sub.2 substrate (11) by an action of the Ne atom current, so that an amorphous Si thin film is grown on the substrate (11) by a plasma CVD reaction. At the same time, a part of the Ne atom current having high directivity is directly incident upon the substrate (11), while another part thereof is incident upon the substrate (11) after its course is bent by a reflector (12). The reflector (12) is so set that all directions of the parts of the Ne atom current which are incident upon the substrate (11) are perpendicular to densest planes of single-crystalline Si.

Abstract: An ion beam deposition process for selective area deposition on a polarized substrate uses a potential applied to the substrate which allows the ionized particles to reach into selected areas for film deposition. Areas of the substrate to be left uncoated are held at a potential that repells the ionized particles.

Abstract: In formation of thin films on both surfaces of a substrate such as a lens or the like, a pair of cluster beam evaporation sources are provided in mutually separate manner in a film forming chamber. The substrate is disposed between the pair of cluster beam evaporation sources. The cluster beam evaporation source includes a crucible which is arranged to be inclined toward the substrate, or which has a nozzle on a lateral face opposed to the substrate.

Abstract: An improved thin film deposition apparatus which is capable of easily increasing the temperature of a crucible using low electric power, for thus reducing the maintenance cost of the system, and fabricating a thin film having a constant characteristic by using a lower current density variation based on a distance, for thus increasing the reliability of a thin film device, whereby it is possible to fabricate a more compact product and to more easily maintain the system, which includes a heat shielding cylindrical chamber, a cylindrical chamber located within the heat shielding cylindrical chamber, a crucible section including a crucible and a heat filament arranged at an inner and lower portion of the cylindrical chamber, an ionization section having an anode and an ionization filament arranged in an upper portion inside the cylindrical chamber, and a magnet for enhancing an ionization efficiency, an upper and lower filament support for supporting the heater filament and the ionization filament, an upper and l

Abstract: In order to form a single-crystalline thin film on a polycrystalline substrate using plasma CVD, a downwardly directed mainly neutral Ne atom current is formed by an ECR ion generator (2). A reaction gas such as silane gas which is supplied from a reaction gas inlet pipe (13) is sprayed onto an SiO.sub.2 substrate (11) by an action of the Ne atom current, so that an amorphous Si thin film is grown on the substrate (11) by a plasma CVD reaction. At the same time, a part of the Ne atom current having high directivity is directly incident upon the substrate (11), while another part thereof is incident upon the substrate (11) after its course is bent by a reflector (12). The reflector (12) is so set that all directions of the parts of the Ne atom current which are incident upon the substrate (11) are perpendicular to densest planes of single-crystalline Si.

Abstract: A collimator is provided in an evaporation chamber to prevent the stray electrons from reaching a semiconductor substrate on which a film of the source is deposited. The collimator has a wall that prevent the stray electrons from reaching the evaporation object and a window that allows the gaseous evaporation source to travel to the object. The problem caused by the stray electrons can be solved with a simple structure, realizing a better evaporation process on the substrate.

Abstract: In order to form a single-crystalline thin film on a polycrystalline substrate using plasma CVD, a downwardly directed mainly neutral Ne atom current is formed by an ECR ion generator (2). A reaction gas such as silane gas which is supplied from a reaction gas inlet pipe (13) is sprayed onto an SiO.sub.2 substrate (11) by an action of the Ne atom current, so that an amorphous Si thin film is grown on the substrate (11) by a plasma CVD reaction. At the same time, a part of the Ne atom current having high directivity is directly incident upon the substrate (11), while another part thereof is incident upon the substrate (11) after its course is bent by a reflector (12). The reflector (12) is so set that all directions of the parts of the Ne atom current which are incident upon the substrate (11) are perpendicular to densest planes of single-crystalline Si.

Abstract: A magnetic recording medium fabrication device includes a cooling drum around which a substrate runs while being cooled thereby, an ion gun arranged upstream to a vapor deposition station for kicking out particles absorbed on the plane of the substrate, a cooling body arranged between the cooling drum and ion gun for absorbing kicked out particles and a vapor deposition device for depositing a magnetic layer on the substrate at the vapor deposition station. The magnetic particles forming the magnetic layer that have residual magnetization vectors within .+-.10.degree. of the easy axis direction including the magnetic anisotropy of the medium are greater than or equal to 70% and less than or equal to 90% of the total amount of magnetic particles.

Abstract: A method of capturing and removing contaminant particles moving within an evacuated interior region of an ion beam implanter is disclosed. The steps of the method include: providing a particle collector having a surface to which contaminant particles readily adhere; securing the particle collector to the implanter such that particle adhering surface is in fluid communication to the contaminant particles moving within the interior region; and removing the particle collector from the implanter after a predetermined period of time.

Abstract: The hydrophilic properties of a printing-machine roller are adjusted with a coating applied on an outer surface of its cylindrical body. The coating contains at least 45% by weight of pure silicon, or it is formed exclusively of chemically pure silicon. The coating is between 0.2 and 2 mm thick and its surface roughness R.sub.z is no more than 5 .mu.m.

Abstract: A thin film deposition apparatus for use in a semiconductor manufacturing process or the like, is provided to, in particular, deposit a diffusion barrier thin film onto a substrate having a concave portion with a relatively high aspect ratio (hereinafter referred to as a contact hole). In the thin film deposition apparatus, a small surface and point source or a ring-shaped source is employed, evaporation is performed under such a condition that the Knudsen number K.sub.n =.lambda./H (a ratio of a mean free path .lambda. of an evaporation material particle to a distance (H) between the evaporation source and the substrate) becomes 0.1 or more, and a relation of the substrate and the evaporation source is set according to the aspect ratio of the contact hole, resulting in deposition of the thin film with good coverage on a bottom surface of the contact hole.

Abstract: A thin film forming apparatus which utilizes cluster ion beam deposition to form thin films on a substrate. In one embodiment, the electrons which ionize the vapor clusters are generated by a cathode which is located inside the corresponding anode. The cathode serves not only as a source of electrodes but also as a means for heating the crucible containing the substance to be deposited. In another embodiment, an electron emitter located at a position remote from the vapor flow in the apparatus is utilized as the source of electrons to form the ionized clusters.