Abstract: A film-forming method by a plasma CVD process, comprising introducing a raw material gas into a reaction chamber containing a substrate positioned therein through a plurality of gas ejecting holes provided at a gas feed pipe and introducing a discharging energy into said reaction chamber to excite and decompose said film-forming raw material gas introduced into said reaction chamber whereby causing the formation of a deposited film on said substrate, characterized in that the introduction of said film-forming raw material gas into said reaction chamber is conducted by ejecting the film-forming raw material gas toward a member opposed to the substrate from each of right and left sides of the gas feed pipe through the gas ejecting holes of the gas feed pipe at a gas-ejecting angle (a) of 45.degree..ltoreq.(a)<90.degree. to a line which is passing through between said cylindrical substrate and each of said plurality of gas feed pipes.

Abstract: A high frequency introducing means is provided which comprises a high frequency electrode having a shape of a bar or plate for generating plasma by high frequency power, and an adjustment mechanism for adjusting an absolute value of reactance between an end of the electrode opposite to a high frequency power introducing point of the electrode and a grounded portion. A plasma treatment apparatus and a plasma treatment method are also provided employing the above high frequency introducing means. A deposition film of high quality is formed stably and efficiently in an extremely uniform thickness and an extremely uniform quality at a high speed on a base member of a large area by adjusting the absolute value of the reactance.

Abstract: A vacuum treatment apparatus (FIG. 13) includes a vacuum recipient or chamber (3) for containing an atmosphere. A mechanism (50,52) for generating electrical charge carriers in the atmosphere is provided in the recipient, the electrical charge carriers being of the type that form electrically isolating material. The recipient also contains a work piece carrier arrangement (1) and at least two electroconductive surfaces (2a, 2b) which are mutually electrically isolated from each other. A DC power supply (8) is operationally connected to the electroconductive surfaces by respective electrical conductors with an inductor (L.sub.66) in one of the conductors. A parallel switching arrangement is connected between the electrical conductors to control a current path between the conductors.

Abstract: A method of growing a layer of Group III nitride material on a substrate by molecular beam epitaxy includes the steps of (i) disposing a substrate in a vacuum chamber, (ii) reducing the pressure in the vacuum chamber to a pressure suitable for epitaxial growth by molecular beam epitaxy, (iii) supplying ammonia through an outlet of a first supply conduit into the vacuum chamber so that the ammonia flows towards the substrate; and (iv) supplying a Group III element in elemental form through an outlet of a second supply conduit into the vacuum chamber so that said Group III element flows towards the substrate. The method causes a layer containing Group III nitride to be grown on the substrate by molecular beam epitaxy. In the method, the outlet of the first supply conduit is disposed nearer to the substrate than the outlet of the second supply conduit.

Abstract: An optical membrane forming apparatus comprises a vacuum chamber (7), a lens holder (2) placed in the chamber (7) for holding one or more lenses (3) in such a manner that each lens (3) is rotational about its axis, and that the lens holder (2) itself is rotational about its own axis, and a plurality of vaporization sources (10a-10c) placed in the chamber (7). Each of the vaporization sources (10a-10c) produces vaporized particles for forming a layer of the membrane on the surface of the lens (3). The vaporization rate of the plurality of vaporization sources are independently controlled. A diaphragm plate (4) is placed between the vaporization sources (10a-10c) and the lenses (3) in order to control the direction of diffusion of the vaporized particles. Each of the sources (10a-10c) has a sample container which is partitioned into a plurality of rooms to store different samples.

Abstract: An apparatus for thin film deposition on fixed objects can be carried out using a portable vacuum deposition plant having a forechamber surrounding the deposition chamber and in which a process gas chamber slightly higher than that of the deposition chamber is maintained. The forechamber and the deposition chamber can be separately evacuated and vacuum seals can be provided between the chambers and the substrate. The source of the coating material may include a sputtering magnetron and a grid can be provided between the magnetron and the substrate.

Abstract: For coating substrates (17,18,20,21,22) in a vacuum-coating chamber (2) the substrates are introduced by an air lock into the coating chamber (2) and moved along a transport path in front of the coating sources (50a,b,c,d) producing a coating cloud. To this end, the substrates (17,18,20,21,22) are led past the coating sources (50a,b,c,d) by means of holding devices (24) arranged movably on a transport belt (9) during at least two successive coating phases. During the one coating phase, the substrates (17,18,20,21,22) are oriented along one transport direction T.sub.3 oriented towards the coating sources (50a,b,c,d) such that essentially the substrate bottom of the cylindrical substrate is coated. During the subsequent second coating phase, the substrates are oriented in front of the coating sources (50a,b,c,d) in a direction T.sub.4 opposite the transport direction T.sub.3, wherein the substrates (17,18,20,21,22) are oriented such that essentially the cylindrical side surface is coated.

Abstract: A water-repellent organic substance such as an organic silicone compound or a perfluoroalkyl-group containing compound is impregnated in a porous material comprising a cold-setting substance. By evaporating the water-repellent organic substance retained in the porous material under vacuum, a water-repellent thin-film is formed on a base member for providing stain-proof and water-proof properties to the base member.

Abstract: A gas inlet, which also serves as a counter electrode, is located inside of a vacuum chamber made of an electrically insulating material. A container is mounted on a mandrel mounted on the gas inlet. The chamber is evacuated to a subatmospheric pressure. A process gas is then introduced into the container through the gas inlet. The process gas is ionized by coupling RF power to a main electrode located adjacent an exterior surface of the chamber and to the gas inlet which deposits a plasma enhanced chemical vapor deposition (PECVD) thin film onto the interior surface of the container.

Abstract: An inactive gas is introduced into an organic material evaporation source to place a thin organic film material in the organic material evaporation source in an atmosphere having a relatively high pressure, and the temperature of the thin organic film material is increased up to a certain temperature. Then, the organic material evaporation source is evacuated to lower the pressure around the thin organic film material for thereby causing the thin organic film material to emit a vapor. Since no wasteful vapor is emitted from the thin organic film material, the thin organic film material is effectively utilized. Because the inactive gas acts as a heating medium, the temperature of the thin organic film material is increased at a high rate, and the thin organic film material is uniformly heated. When the temperature of the thin organic film material is lowered in an inactive gas atmosphere, it can be lowered at a high rate.

Abstract: A substrate processing apparatus includes a processing chamber and a vacuum spare chamber adjacent thereto through a vacuum valve. The processing chamber houses two holders for holding substrates on their surfaces on the same side. The processing chamber is provided with an ion source for irradiating the substrate on each holder having reached a processing position P with an ion beam so that it is subjected to ion implantation. The processing chamber is internally provided with a holder moving mechanism for performing the operation of moving the two holders in parallel independently from each other so that they traverse the processing position P, and moving the two holders in parallel simultaneously between the insides of the processing chamber and vacuum spare chamber through the vacuum valve.

Abstract: The invention provides a vacuum coating forming device for forming a thin-film coating by a plasma beam on a substrate arranged in a vacuum chamber, the vacuum coating forming device being provided with a pressure gradient type plasma gun for generating the plasma beam toward the vacuum chamber and a converging coil which is provided so as to surround a short-tube portion of the vacuum chamber projecting toward an outlet of the plasma gun and which reduces a cross section of the plasma beam. This vacuum coating forming device further comprises an insulating tube provided at the outlet so as to surround the plasma beam and project in electric floating state, and an electron return electrode which surrounds the insulating tube within the short-tube portion and which is higher in electric potential than the outlet.

Abstract: The present invention provides a CVD apparatus and a CVD method for use in forming an Al/Cu multilayered film. The Al/Cu multilayered film is formed in the CVD apparatus comprising a chamber for placing a semiconductor wafer W, a susceptor for mounting the semiconductor wafer W thereon, an Al raw material supply system for introducing a gasified Al raw material into the chamber and a Cu raw material supply system for introducing a gasified Cu raw material into the chamber. The Al/Cu multilayered film is formed by repeating a series of steps consisting of introducing the Al raw material gas into the chamber, depositing the Al film on the semiconductor wafer W by a CVD method, followed by generating a plasma in the chamber in which the Cu raw material gas has been introduced and depositing the Cu film on the semiconductor wafer W by a CVD method. The Al/Cu multilayered film thus obtained is subjected to a heating treatment (annealing), thereby forming a desired Al/Cu multilayered film.

Abstract: The vacuum vaporization process is controlled using recoil force of the evaporating particles as the measurable variable by measuring the rate of evaporation. The vaporizer vessel is arranged in the vacuum chamber with the aid of force transducers, and the signal emanating from the force transducers can be used to control, for example, the electrical energy to heat the vaporizing material, the beam deflection or the fill level in the vaporizer, with the sensors not coming into contact with the vapor. Vacuum vaporization processes, particularly for vapor deposition of functional coatings on tools and sheet substrates, can be controlled with this method and device.

Abstract: The film-forming apparatus includes a gas introduction tube for introducing an inert gas into a vacuum chamber, a vapor source and a target, and forms thin film by depositing sputtered particles and evaporated particles on the surface of a substrate, the sputtered particles being liberated by sputtering the target using ion energy of plasma generated around the target while the evaporated particles being obtained by evaporating a vapor source by heating and ionizing evaporated components using the plasma.

Abstract: A thin film deposition chamber utilizes a planetary fixture and two vapor sources to generate two partially overlapping vapor streams. The two vapor streams create a combined distribution profile. The planetary fixture holds a plurality of substrates in a position similar to a portion of the combined distribution profile.

Abstract: An apparatus and method for depositing plural layers of materials on a substrate within a single vacuum chamber allows high-throughput deposition of structures such as those for GMR and MRAM application. An indexing mechanism aligns a substrate with each of plural targets according to the sequence of the layers in the structure. Each target deposits material using a static physical-vapor deposition technique. A shutter can be interposed between a target and a substrate to block the deposition process for improved deposition control. The shutter can also preclean a target or the substrate and can also be used for mechanical chopping of the deposition process. In alternative embodiments, plural substrates may be aligned sequentially with plural targets to allow simultaneous deposition of plural structures within the single vacuum chamber.

Abstract: The present invention discloses a physical vapor deposition apparatus includes a cable driving and cooling mechanism for driving a cable there-through and for depositing a thin layer of evaporated conductive film on the cable. The thin layer conductive layer can therefore function as a shield to prevent electromagnetic interference (EMI) during high frequency signal transmission. In a preferred embodiment, the apparatus for forming shielding layer for a cable includes two separate chambers. The first chamber is an electric arc chamber for generating metallic vapor by the use of electric arcs. A second chamber is an electron beam chamber. Electron beam generated from an electron gun is irradiated upon an aluminum wire to evaporate the aluminum wire and to deposit the aluminum vapor on the surface of the cable. Both of these chambers are provided with wheels which are employed to direct and pull the cables through the chambers.

Abstract: An apparatus for applying material by cathodic arc vapor deposition to a substrate is provided which includes a vessel, apparatus for maintaining a vacuum in the vessel, a disk-shaped cathode, apparatus for selectively sustaining an arc of electrical energy between the cathode and an anode, and apparatus for steering the arc around the cathode. The arc of electrical energy extending between the cathode and the anode liberates a portion of the cathode which is subsequently deposited on the substrate located inside the vessel.

Abstract: A method and apparatus for vacuum depositing a coating onto a substrate are provided. The method includes the steps of: introducing an evaporant into a magnetically defined deposition region of a vacuum process chamber, ionizing the evaporant to form a plasma; generating a "magnetic bottle" magnetic field configuration to define the deposition region and to confine the plasma to the deposition region, further increasing the percentage ionization of the plasma to form a highly ionized media; creating a static dc electric field that is generally perpendicular to the magnetic field in the deposition region and parallel to the plane of the substrate; and then moving the substrate through the highly ionized media with the plane of the substrate and its direction of motion generally parallel to the magnetic field lines. The method of the invention is particularly suited to deposition of any atomistic evaporant onto intermediate-sized substrates.

Abstract: A thin-film deposition apparatus includes an arc vaporization portion from which charged particles of a deposition material are generated by a cathodic arc discharge, a plasma duct having a bend and guiding the charged particles from the arc vaporization portion to a substrate, a magnetic field generator for generating magnetic fields to direct the charged particles from the arc vaporization portion to the substrate, and a reflective magnetic field source installed in a convex portion of the bend of the plasma duct, for generating magnetic fields that interfere with the magnetic fields formed by the magnetic field generator so that magnetic flux lines are distributed along the plasma duct.

Abstract: A plasma beam is directed towards a hearth to flow electric current of the plasma through the hearth during formation of a thin film on a substrate. The plasma beam is directed towards an auxiliary anode to flow electric current of the plasma through the auxiliary anode during the period after completion of the formation of the thin film on the substrate and before beginning of the formation of a thin film on the subsequent substrate.

Abstract: An apparatus for applying material by cathodic arc vapor deposition to a substrate is provided which includes a vessel, apparatus for maintaining a vacuum in the vessel, a disk-shaped cathode, apparatus for selectively sustaining an arc of electrical energy between the cathode and an anode, and apparatus for driving the arc around an axially extending evaporative surface of the cathode. The apparatus for driving the arc includes a magnetic field generator attached to a ferromagnetic center piece. The magnetic field generator includes a plurality of side magnets attached to the ferromagnetic center piece, and a center magnet positioned radially inside of the side magnets. Each side magnet produces a magnetic field that permeates the cathode, and each magnetic field includes a portion that runs substantially parallel to the evaporative surface. The center magnet influences the axial position of the arc path relative to the evaporative surface.

Abstract: A crucible (4) in a vacuum chamber (3) holds material to be evaporated, such as a metal or metal oxide or a mixture of a metal and a metal oxide, and a coating roll (6) guides a film web (8) a certain distance away from the material to be evaporated. A chamber (9, 10) is provided on each side of the coating roll (6) which carries the film web (8) past the crucible (4), a magnetron cathode (11, 12) connected to a medium-frequency source (19) being provided in each chamber. Each of the two chambers (9, 10) is connected by its own channel (13, 14) to a coating zone (20) directly between the coating roll (6) and the crucible (4), and each chamber (9, 10) is connected by a pressure line (21, 22) to a source (23, 24) of process gas.

Abstract: The present invention provides a method of and apparatus for efficiently and continuously manufacturing large, thin-film-coated substrates (i.e. antireflection filters) via small-scale manufacturing apparatus. The apparatus includes a film-forming chamber, two stockers, each capable of storing substrates in multi-stages, a loading chamber and an unloading chamber. The film forming area is centrally positioned, surrounded upstream and downstream by each stocker with loading and unloading chambers positioned upstream and downstream of the stockers, respectively. The film-forming chamber, the loading and unloading chamber and each stocker have, respectively, independent evacuation systems. The film forming chamber also contains a particle generation source and apparatus for passing a substrates, one after another, from the first stocker, in to the film-forming chamber and out to the second stocker.

Abstract: A method for manufacturing an optical information recording medium which is usually stable and is not affected by the environmental condition and an apparatus used therefor. The method comprises the steps of placing a substrate and a member comprising a material for a film opposing each other in a vacuum film forming chamber; forming a plasma by glow discharging a gas between the substrate and the member comprising a material for a film; and supplying a gas mixture containing water to the film forming chamber before forming films or during forming films of the protective layer by the film forming method in which the material for a film freed from the member comprising a material for a film by using the plasma as an energy source are attached or deposited on the substrate.

Abstract: The present invention is directed to providing thin-film-coated substrate manufacturing methods and apparatus that make it possible to manufacture large thin-film-coated substrates such as anti-reflection filters using relatively small production facilities. The thin-film-coated substrate manufacturing methods pertaining to the present invention area capable of producing thin films on substrates to be coated as large as the film formation area by using a film formation monitor or monitors placed outside of the film formation area or displaceably mobile therein, measuring the thickness of the monitor thin film or films formed on the film formation monitor or monitors, and controlling the film coating process based on the measured thickness of the monitor thin film or films. It is also capable of increasing the productivity of the manufacturing process through increased flexibility in the arrangement of substrate or substrates to be coated inside the film formation area.

Abstract: An apparatus for initial ion cleaning, vapor metal deposition and protective coating of objects by vacuum deposition. The apparatus includes a vacuum chamber for receiving the objects which are held on a movable rack or support. A metal such as aluminum is vaporized centrally in the chamber in a well known fashion after the chamber has been substantially evacuated of air molecules for uniform vapor deposition of the metal atop exposed surfaces of the objects. An improved polymerization gun includes an elongated housing having an arcuate or concaved surface which is connected to an external surface of the chamber over an elongated opening formed through a chamber side wall. The polymerization gun also includes an elongated conductive preferably aluminum rod disposed along the opening tangentially to the chamber surface and two apertured delivery tubes or members positioned within the housing. The conductive rod is electrically isolated from the housing and chamber and connected to a d.c. or a.c.

Abstract: A vacuum treatment apparatus eliminate arcing in a vacuum recipient for containing an atmosphere and having a mechanism for generating electrical charge carriers in the atmosphere. A workpiece carrier arrangement and at least two electro-conductive surfaces are in the recipient and a generator unit having an output is connected to the electro-conductive surfaces. The generator includes a DC generator with an output, and a controlled adjusting unit with an input connected to the output of the DC generator. The controlled adjusting unit generates a first output signal in dependency on an output signal of the DC generator during first timespans, and a second output signal during second timespans. The unit may also have a time-controlled discharge or charge current loop connected from one of the electro-conductive surfaces to the other, with a higher ohmic resistance during the first timespans and a lower ohmic resistance during the second timespans.

Abstract: A method and apparatus for producing AlN powder employing a vacuum chamber with a nozzle thereon having a hollow center crucible of graphite with a small feed hole in the bottom thereof. A device is provided for heating and melting aluminum in the crucible. A plasma gun connected to a source of argon and nitrogen is ignited below said feed hole, and melted aluminum moves into the plume of said plasma gun. The melted aluminum is atomized in the plume, and the droplets of aluminum are vaporized and react to the nitrogen in the plume, to create AlN which is collected in a collecting chamber.

Abstract: A method and apparatus for forming a coating on a substrate. The system (1) comprises an electron-beam evaporator (5) to produce an evaporant (6) from a source material, a plasma generation chamber (3), within which a magnetoplasma is generated, and a magnetic field supply means (10) to apply a magnetic field (11) to the apparatus (1), to transport the magnetoplasma (60) to the substrate (12).

Abstract: An apparatus for initial ion cleaning, vapor metal deposition and protective coating of objects by vacuum deposition. The apparatus includes a vacuum chamber for receiving the objects which are held on a movable rack or support. A metal such as aluminum is vaporized centrally in the chamber in a well known fashion after the chamber has been substantially evacuated of air molecules for uniform vapor deposition of the metal atop exposed surfaces of the objects. A polymerization gun includes an elongated housing which is connected to an external surface of the chamber over an elongated opening formed through a chamber side wall. The polymerization gun also includes an elongated conductive preferably aluminum rod disposed along the opening and two apertured delivery tubes or members positioned within the housing. The conductive rod is electrically isolated from the housing and chamber and connected to a d.c. or a.c.

Abstract: A process for forming a thin metal coating on a substrate wherein a gas stream heated by an electrical current impinges on a metallic target in a vacuum chamber to form a molten pool of the metal and then vaporize a portion of the pool, with the source of the heated gas stream being on one side of the target and the substrate being on the other side of the target such that most of the metallic vapor from the target is directed at the substrate.

Abstract: A vacuum chamber contains a crucible (4) and an electron beam source (5) for evaporating material in the crucible. A substrate holder (6) holds substrates (7) above the crucible (4) with a process space therebetween. A magnetron cathode (11, 12) is located in each of two compartments (9, 10) located on either side of the process space. An aperture (21, 22) connects each compartment to the process space; each cathode (11, 12) carries a target (13, 14) facing away from the respective aperture (21, 22). The cathodes are connected to a medium frequency RF power supply (16), and process gas is supplied to the compartments by lines (17, 18).

Abstract: The invention is an electron-beam vaporization installation for coating structural components made of extreme-heat-resistant alloys (super alloys), especially turbine blades, with so-called thermal barrier coatings. The invention divides the continuous process principle for this coating task with extreme thermal stress for the substrata. The invention divides the thermally high stressed chambers by a partition with a slot. As a result of this the heating chamber and the coating chamber are thermally decoupled from the room for the transport system of the substrata carriage. A further characteristic of the invention is that the carriage for the transport of the substrata through the installation is cooled. For this purpose at the specific work positions the cooling system of the carriage is coupled with the exterior cooling circuits by a leakproof coupling system. The movement of the substrata is done hydraulically and is coupled with the exterior hydraulic circuits in a similar manner as the cooling system.

Abstract: A method and apparatus for vacuum depositing a coating onto a substrate are provided. The method includes the steps of: introducing an evaporant into a magnetically defined deposition region of a vacuum process chamber, ionizing the evaporant to form a plasma; generating a "magnetic bottle" magnetic field configuration to define the deposition region and to confine the plasma to the deposition region, further increasing the percentage ionization of the plasma to form a highly ionized media; creating a static dc electric field that is generally perpendicular to the magnetic field in the deposition region and parallel to the plane of the substrate; and then moving the substrate through the highly ionized media with the plane of the substrate and its direction of motion generally parallel to the magnetic field lines. The method of the invention is particularly suited to deposition of any atomistic evaporant onto intermediate-sized substrates.

Abstract: A plasma thin-film forming apparatus comprises a vacuum vessel, a positive and a negative electrode disposed in the vacuum vessel so that the discharge surfaces may face each other at a required interval, an exhaust means for making a required vacuum condition in the interior of the vacuum vessel, a high-voltage impressing means for generating DC glow discharge by impressing high voltage between the positive and the negative electrode, and a gas-inducting means for supplying metal compound-including gas into the vacuum vessel. The gas-inducting means comprises a flexible holding member gastightly fitted to a sublimation chamber communicating with the vacuum vessel and having a hollow portion therein and a glass container inserted in the hollow portion of the holding member and enclosing a predetermined quantity of crysterized osmium tetraoxide therein. The exhaust means is provided with a material gas-adsorbing means in the exhaust port.

Abstract: The present invention relates to a novel method for the plasma assisted high vacuum vapor coating of parts with wear resistant coatings where the method comprises at least the process steps heating and conditioning and where the process step conditioning comprises heating. A protective gas is used for the heating. It is circulated at a pressure of at least 0.01 bar. Significant advantages are realized over state of the art methods using radiation heating. The method is preferentially carried out in an apparatus conceived for it, which comprises a blower (3), protective shields (8) and gas flow management sheets(9).

Abstract: A rectangular vacuum-arc plasma source and associated apparatus for generating and directing a stream of plasma containing an ionized vapor of a cathode material toward a substrate by vacuum arc evaporation of a rectangular planar cathode mounted in a rectangular plasma duct. The rectangular duct conducts the plasma from the cathode to the substrate region, while intercepting the molten droplets of cathode material also generated by the arc. Magnets control the arc motion on the cathode surface while simultaneously generating the magnetic field which guides the plasma through the duct. Benefits of a filtered cathodic arc (fully ionized vapor stream, elimination of splattered droplets) are combined with the benefits of a rectangular source (uniform evaporation from the source and uniform deposition on the substrate using linear motion). The rectangular source may be extended indefinitely in length, thus allowing coating or ion implantation on large or long substrates.

Abstract: A film-forming apparatus is provided with a particle prevention means, whose structure prevents a drop in film-yield due to particle formation. The particle prevention means does not need to be cleaned as frequently as known particle prevention means, thus increasing film production efficiency. This particle prevention means has a tongued-and-grooved surface. When the particle prevention means having a tongued-and-grooved surface is set in the film-forming apparatus, the film-forming material is deposited in a discontinuous manner on the particle prevention means, which can extend the time of film exfoliation, and in turn, extend the cycle for cleaning the particle prevention means, and prevent a drop in film-yield due to the film exfoliation.

Abstract: An apparatus for facilitating plasma processing and in particular chemical plasma enhanced vapor deposition, plasma polymerization or plasma treatment of barrier materials onto the interior surface of containers barrier materials are useful for providing an effective barrier against gas and/or water permeability in containers and for extending shelf-life of containers, especially plastic evacuated blood collection devices.

Abstract: An exhaust system for a film forming apparatus including an exhaust pipe passage connected to an exhaust port of the film forming apparatus for forming a film on a object by using vaporized gas of an organic metal compound. The film forming apparatus includes a pressure transfer unit provided for the exhaust pipe passage and arranged to transfer, through the exhaust pipe passage, gas in the film forming apparatus as exhaust gas. A cooling mechanism is provided for the pressure transfer unit and arranged to cool the pressure transfer unit to a temperature lower than a temperature, at which the organic metal compound is decomposed, so as to prevent precipitation of the organic metal compound contained in the exhaust gas introduced into the pressure transfer unit.

Abstract: A collimator is provided in an evaporation chamber to prevent the stray electrons from reaching a semiconductor substrate on which a film of the source is deposited. The collimator has a wall that prevent the stray electrons from reaching the evaporation object and a window that allows the gaseous evaporation source to travel to the object. The problem caused by the stray electrons can be solved with a simple structure, realizing a better evaporation process on the substrate.

Abstract: A process chamber is described wherein a plasma is generated by electron-cyclotron resonance (ECR) and is isolated from chamber walls by a magnetic field from two diametrically-opposed solenoids. A substance to be deposited on a substrate is introduced into the chamber by laser ablation, evaporation, or other techniques. The ECR plasma has a relatively large volume to ensure a homogeneous influx of material, and a low potential that results in less aggressive ion bombardment of the substrate. The process chamber can be used in a variety of processes, including deposition and oxidation of superconducting metal oxides, and reduction of indium-tin-oxide with nitrogen at low temperatures.

Abstract: Treatment systems and associated methods for exposing one or more articles to at least one treatment source are disclosed herein. In one embodiment the system includes a single treatment source. The treatment source and the article or articles being treated are positioned in separately evacuable chambers. In a method of using the first embodiment, the article or articles can be removed from a handling chamber while the treatment source remains in an evacuated environment within a source chamber. Multi-source treatment systems and associated methods are also disclosed herein. Each treatment source in the multi-source systems is positioned in a respective evacuable chamber completely isolated from the other sources which make up the overall system. An evacuable multi-source handling chamber is arranged for selective movement between the source chambers.

Abstract: There are disclosed method and apparatus for producing a magnetic recording medium including a non-magnetic substrate, a magnetic layer formed on one surface of said non-magnetic substrate and a back coat layer formed on an opposite surface of said non-magnetic substrate. By using the method and the apparatus, the magnetic recording medium having the back coat layer, which exhibits a high lubricating property and a low dynamic friction coefficient, can be produced with a high operating efficiency. The method includes the steps of forming the back coat layer by a plasma chemical vapor deposition and supplying a lubricant, substantially at the time when the back coat layer is formed by the plasma chemical vapor deposition, such that the lubricant is introduced into the back coat layer.

Abstract: Apparatus and method are provided for forming coatings of transition metal compounds on solid bodies using cathodic arcs and a reactive gas in a vacuum chamber. The metal composition of the coatings is varied by moving the articles to be coated through the vacuum chamber having cathodes at selected locations, the articles being supported on movable supports.

Abstract: A process for reducing particle defects in an arc vapor deposition coating on a substrate comprises the steps of providing a metallic wire mesh, providing an arc source adapted to impart a positive charge on coating macroparticles produced during arc vapor deposition, positioning the wire mesh in between the arc source and the substrate, applying a negative bias voltage to the wire mesh and entrapping positively charged macroparticles on the negatively charged wire mesh during coating deposition.

Abstract: A single chamber of a vapor deposition system is used to deposit both Ti and TiN. A Ti layer is deposited on the sample using a noncollimated process. N.sub.2 gas is then introduced in the chamber. A TiN layer is then deposited over the Ti layer. A second Ti layer is deposited over the TiN layer. A separate Ti pasting of a TiN chamber is eliminated, thereby increasing throughput. Further, only three physical vapor deposition chambers are used, thereby allowing the fourth chamber to be used for other metal deposition. Moreover, the second Ti layer eliminates the first wafer effect and reduces sheet resistance relative to a same chamber Ti/TiN underlayer. Lastly, the Al deposited on this new stack has a stronger <111> crystallographic texture, which leads to better electromigration resistance.

Abstract: The present invention relates to an arc ion plating device utilizing a vacuum arc discharge to be utilized for the surface process of works and to an arc ion plating system provided with the above-mentioned device, and the present invention offers the device and the system which are able to realize extremely high productivity by an efficient handling of works. The device according to the present invention comprises a rod-shaped evaporation source and works to be coated with a film being disposed so as to surround the rod-shaped evaporation source, The device is so constituted that the works can be moved relative to the rod-shaped evaporation source in the axial direction of the rod-shaped evaporation source.