Abstract: An apparatus for depositing a ceramic coating by electron beam physical vapor deposition (EBPVD). Ceramic coatings of more uniform thickness over a larger surface area are deposited by increasing the size of a pool of molten ceramic from which the ceramic is deposited. The apparatus uses a crucible that surrounds a ceramic material that serves as the source of the deposited ceramic coating. The crucible is configured to define a reservoir whose cross-sectional area is larger than the cross-sectional area of the ceramic material. The size of the pool is increased by increasing the size of the reservoir in lieu of increasing the diameter of the ceramic material in order to maintain acceptable ingot quality.

Abstract: An optical membrane forming apparatus comprises a vacuum chamber (7), a lens holder (2) placed in the chamber (7) for holding one or more lenses (3) in such a manner that each lens (3) is rotational about its axis, and that the lens holder (2) itself is rotational about its own axis, and a plurality of vaporization sources (10a-10c) placed in the chamber (7). Each of the vaporization sources (10a-10c) produces vaporized particles for forming a layer of the membrane on the surface of the lens (3). The vaporization rate of the plurality of vaporization sources are independently controlled. A diaphragm plate (4) is placed between the vaporization sources (10a-10c) and the lenses (3) in order to control the direction of diffusion of the vaporized particles. Each of the sources (10a-10c) has a sample container which is partitioned into a plurality of rooms to store different samples.

Abstract: An apparatus for processing substrates with a plasma jet with increased throughput is described. The apparatus comprises at least two carrousels for holding a plurality of substrates. Each of the carrousels includes a rotatable angle drive having a rotation axis Da, a plurality of arms extending radially from the angle drive and a plurality of rotatable substrate holders. Each of the substrate holders is connected to one of the arms, each of the rotatable substrate holders has a rotation axis Ha positioned at a distance R from the rotation axis Da of the rotatable angle drive. The carousel angle drive provides programmable motion of the substrates being treated relative to a plasma jet generator. The plasma jet generator is movable from a first position Z.sub.1 adjacent to the first carousel to a second position Z.sub.2 adjacent to the second carousel. While the substrates on the first carousel are being treated by the plasma jet, the substrates on the second carousel can be loaded or unloaded.

Abstract: A mask with a microscopic pin-hole having a circular configuration with a diameter of 1 nm to 10 .mu.m or a rectangular configuration with a side of 1 nm to 10 .mu.m is arranged opposite to a substrate. A magnetic material composing a magnetic microdevice is deposited on the substrate through the pin-hole of the mask to form the magnetic microdevice having fine structure on the substrate. By moving the substrate and mask relative to each other in an X-Y plane parallel with the surface of the substrate in a stepwise manner, a plurality of microelements may be formed on the substrate in a matrix form. By moving the substrate and mask relative to each other during the deposition, an elongated microelement may be formed. The rectangular pin-hole of the mask is formed by stacking grid-meshes for use in an electron microscope such that rectangular openings formed in the gridmeshes are aligned in a diagonal direction. The mask may be formed by a diaphragm for use in a transmission electron microscope.

Abstract: The vacuum vaporization process is controlled using recoil force of the evaporating particles as the measurable variable by measuring the rate of evaporation. The vaporizer vessel is arranged in the vacuum chamber with the aid of force transducers, and the signal emanating from the force transducers can be used to control, for example, the electrical energy to heat the vaporizing material, the beam deflection or the fill level in the vaporizer, with the sensors not coming into contact with the vapor. Vacuum vaporization processes, particularly for vapor deposition of functional coatings on tools and sheet substrates, can be controlled with this method and device.

Abstract: A thin film deposition chamber utilizes a planetary fixture and two vapor sources to generate two partially overlapping vapor streams. The two vapor streams create a combined distribution profile. The planetary fixture holds a plurality of substrates in a position similar to a portion of the combined distribution profile.

Abstract: The present invention provides for a system for the precision optical coating of substrates and a method of operating the system. The system has a vacuum chamber, a plasma source in the vacuum chamber, a plurality of e-beam evaporation units which generate a vapor of optical coating material in the vacuum chamber, and a plurality of stations, each station holding one substrate and rotating the substrate during deposition of the optical coating material upon the substrate. Each of the stations has an optical monitoring unit which monitors in situ the deposition of the optical coating material upon the corresponding substrate. With the described system, high production rates of precision optical elements, such as narrow bandpass optical filters, can be achieved.

Abstract: In order to form a single-crystalline thin film on a polycrystalline substrate using plasma CVD, a downwardly directed mainly neutral Ne atom current is formed by an ECR ion generator (2). A reaction gas such as silane gas which is supplied from a reaction gas inlet pipe (13) is sprayed onto an SiO.sub.2 substrate (11) by an action of the Ne atom current, so that an amorphous Si thin film is grown on the substrate (11) by a plasma CVD reaction. At the same time, a part of the Ne atom current having high directivity is directly incident upon the substrate (11), while another part thereof is incident upon the substrate (11) after its course is bent by a reflector (12). The reflector (12) is so set that all directions of the parts of the Ne atom current which are incident upon the substrate (11) are perpendicular to densest planes of single-crystalline Si.

Abstract: A novel high speed, high quality plasma enhanced surface modification or CVD thin-film deposition method and apparatus. The invention employs both microwave and e-beam energy for creation of a plasma of excited species which modify the surface of substrates or are deposited onto substrates to form the desired thin film. The invention also employs a gas jet system to introduce the reacting species to the plasma. This gas jet system allows for higher deposition speed than conventional PECVD processes while maintaining the desired high quality of the deposited materials.

Abstract: In a fabrication method of a semiconductor apparatus, the semiconductor apparatus is made with a selective gold plating process rather than an ion-milling process. A tungsten film (W film) as a current supplying layer is formed on the entire front surface of an insulation film. The insulation film is formed on a GaAs substrate on which devices such as FETs are formed. With a mask of a photoresist film, a titanium (Ti) film, a platinum (Pt) film, and a gold (Au) film are successively evaporated and then lift-off process is performed. A photoresist film is patterned. A gold plate film with a thickness of 8 .mu.m is formed. The current supplying layer is removed by magnetron discharge plasma ion-etching process. Thick U-shaped gold plate lines are formed.

Abstract: An electron beam source provides beam focusing by placing magnets under the crucible. The location of the magnets, operating in conjunction with the remaining magnetic and electromagnetic structure, permits varying sizes of crucibles to be used without redesign of the remainder of the electron beam source.

Abstract: The present invention relates to a modular, rotisserie type coating fixture for use in electronic beam physical vapor deposition (EB-PVD) coating processes. The fixture includes a support structure which rotates about a first axis during coating and a plurality of cassettes mounted within the support structure. The cassettes each hold a plurality of workpieces to be coated and are mounted in the support structure so that they rotate about axes parallel to the first axis. This allows each workpiece being coated to rotate about its longitudinal axis and to achieve an evenly distributed, substantially uniform coating on surfaces of the workpiece to be coated.

Abstract: A vacuum chamber contains a crucible (4) and an electron beam source (5) for evaporating material in the crucible. A substrate holder (6) holds substrates (7) above the crucible (4) with a process space therebetween. A magnetron cathode (11, 12) is located in each of two compartments (9, 10) located on either side of the process space. An aperture (21, 22) connects each compartment to the process space; each cathode (11, 12) carries a target (13, 14) facing away from the respective aperture (21, 22). The cathodes are connected to a medium frequency RF power supply (16), and process gas is supplied to the compartments by lines (17, 18).

Abstract: The invention is an electron-beam vaporization installation for coating structural components made of extreme-heat-resistant alloys (super alloys), especially turbine blades, with so-called thermal barrier coatings. The invention divides the continuous process principle for this coating task with extreme thermal stress for the substrata. The invention divides the thermally high stressed chambers by a partition with a slot. As a result of this the heating chamber and the coating chamber are thermally decoupled from the room for the transport system of the substrata carriage. A further characteristic of the invention is that the carriage for the transport of the substrata through the installation is cooled. For this purpose at the specific work positions the cooling system of the carriage is coupled with the exterior cooling circuits by a leakproof coupling system. The movement of the substrata is done hydraulically and is coupled with the exterior hydraulic circuits in a similar manner as the cooling system.

Abstract: The present invention relates to a novel method for the plasma assisted high vacuum vapor coating of parts with wear resistant coatings where the method comprises at least the process steps heating and conditioning and where the process step conditioning comprises heating. A protective gas is used for the heating. It is circulated at a pressure of at least 0.01 bar. Significant advantages are realized over state of the art methods using radiation heating. The method is preferentially carried out in an apparatus conceived for it, which comprises a blower (3), protective shields (8) and gas flow management sheets(9).

Abstract: A laser and laser-assisted multi-beam deposition apparatus for evaporating and/or sublimating a material to deposit on a substrate comprises using a laser and an electron beam, or two lasers, simultaneously applied to the material to vaporize the material with reduced ejection of material particulates and reduced oxidation of the material. The apparatus and method is particularly useful in the processing of blanket refractory metal depositions on large flat panel display substrates, silicon wafer substrates, and tribological/ceramic coatings.

Abstract: A vacuum evaporator is characterized in that hot-cathode filaments (7) are provided as the electron source around a tip of a rod evaporation material (4); the peripheries of the rod evaporation material (4) and the hot-cathode filaments (7) are disposed in parallel to a conductive cooling member (1) of a good heat conductive metal which is partly contacted with the atmosphere to decrease the dissipation of radiation heat produced from the hot-cathode filaments (7) and a tip (41) of the rod evaporation material (4) into a vacuum vessel a; heat absorbed by the conductive cooling member (1) is quickly conducted through the conductive cooling member and discharged to the atmosphere to prevent the temperature of the electron impact heating part from increasing and to prevent the increase of the gas discharge due to the heat dissipation from the electron impact heating part.

Abstract: A collimator is provided in an evaporation chamber to prevent the stray electrons from reaching a semiconductor substrate on which a film of the source is deposited. The collimator has a wall that prevent the stray electrons from reaching the evaporation object and a window that allows the gaseous evaporation source to travel to the object. The problem caused by the stray electrons can be solved with a simple structure, realizing a better evaporation process on the substrate.

Abstract: A magnetic recording medium fabrication device includes a cooling drum around which a substrate runs while being cooled thereby, an ion gun arranged upstream to a vapor deposition station for kicking out particles absorbed on the plane of the substrate, a cooling body arranged between the cooling drum and ion gun for absorbing kicked out particles and a vapor deposition device for depositing a magnetic layer on the substrate at the vapor deposition station. The magnetic particles forming the magnetic layer that have residual magnetization vectors within .+-.10.degree. of the easy axis direction including the magnetic anisotropy of the medium are greater than or equal to 70% and less than or equal to 90% of the total amount of magnetic particles.

Abstract: A thin film magnetic recording medium is manufactured with vacuum deposition or sputtering technique. One or more reflectors are provided between the substrate and an evaporation source around a path through which evaporated atoms travel onto a substrate. When a thin film is deposited on a substrate, the one or more reflectors are heated above a melting point of an evaporation material to reflect evaporated atoms arriving them. Thus, atoms reflected by the one or more reflectors also contribute to deposition of a thin film as well as evaporated atoms arriving directly from the evaporation source, and deposition efficiency is improved. Such a reflector is also used to limit a boundary or the path through which evaporated atoms travel onto a substrate. Then, a range of incident angles of evaporated atoms onto the substrate is kept the same for a long time on deposition, and characteristics of the thin film are stable.

Abstract: A present invention relates to improvements in electric arc vapor deposition chambers. A first improvement involves the utilization of a heat shield disposed between a source and a substrate to decrease heat energy radiating from the source directly to the substrate. In a preferred embodiment, the heat shield is cooled by a liquid cooling system which acts to remove heat energy from the chamber. An improved source mounting assembly of the present invention provides for enhanced cooling of the source material. It includes the utilization of a back surface of the source material as a wall of a coolant chamber within the source mounting assembly. An O-ring seal is disposed at the rearward face of the source material to provide a cool temperature environment for the O-ring seal while it prevents coolant leakage into the chamber.

Abstract: Apparatus for coating substrates 31, 31", . . . in a vacuum chamber 2 including a substrate carrier 30 disposed therein and a device 29 for generating a first plasma cloud 28 and, further, including magnets 26, 27 directing the plasma cloud 28 onto the surface of the substrates 31, 31" . . . wherein this device for generating the plasma cloud 28 has an election emitter 11 and a downstream tubular anode 38, the anode has an inlet 10 for the process gas to ignite the plasma and, further, the device is provided with magnets 4, 7 for directing and guiding the plasma through the anode tube 38 into the process chamber 43 and including a device for generating atoms, molecules or clusters of the materials for producing a layer on the substrates 31, 31", . . . , preferably an electron beam evaporator 37 from which the evaporated or sputtered material 33 can be directly applied onto the substrates 31, 31" . . . .

Abstract: The hydrophilic properties of a printing-machine roller are adjusted with a coating applied on an outer surface of its cylindrical body. The coating contains at least 45% by weight of pure silicon, or it is formed exclusively of chemically pure silicon. The coating is between 0.2 and 2 mm thick and its surface roughness R.sub.z is no more than 5 .mu.m.

Abstract: A process and apparatus for plasma-activated electron beam vaporization is rovided. The vaporizing material from at least two vaporizer crucibles is vaporized with electron beams. An electric voltage is applied to the vaporizer crucibles in such a way that the vapor-emitting areas serve as electrodes of an electric discharge. The vaporizing material acts as a cathode or anode. The process and apparatus are preferably intended for the reactive coating of large surfaces and for the reactive coating of components, tools and strip steel.

Abstract: An apparatus for applying ceramic coatings using an electron beam-physical vapor deposition apparatus is described. The apparatus includes means for introducing the anionic constitutent of the ceramic into a coating chamber and means for confining the anionic constituent about the component to be coated during the coating process.

Abstract: A thin film forming device comprises a vacuum chamber which is vacuous inside, a substrate holder which is provided in the vacuum chamber for holding a substrate thereon and a molecular beam source disposed in the vacuum chamber directed toward the substrate holder. An endoscope is inserted in the vacuum chamber at the tip end thereof and is covered by a transparent protecting tube connected to the tip end of a bellows. As the bellows is stretched or retracted, the tip end portion of the endoscope and the protecting tube can be advanced to a space between the substrate held by the substrate holder and the molecular beam source or retracted into a shelter provided at a side of the space. As a result, it is possible to know the composition of a thin film as well as to observe the irradiation source of material of the thin film and the plasma radiation while the film is being formed on the film-forming surface of the substrate in the vacuum chamber.

Abstract: A plasma vapor deposition apparatus which can form high-quality films of ITO, for example, with high productivity, includes a vapor deposition chamber, a drive and a horizontally rotating circular holding plate connected to the drive located in a lower portion of the chamber, the circular holding plate having a circular vapor source material mounting centered at the rotational axis about which the plate is rotated by the drive, and coil-shaped electrodes for exciting vapor produced by evaporating the vapor source material. A film thickness correcting plate is interposed between the holding plate and the path along which the substrate is transported through the chamber by a transporting device. This plate is configured to so shield a portion of the substrate so that an excess of excited vapor particles do not accumulate at a given site on the surface of the substrate.

Abstract: Device for the vacuum coating of mass produced products. By means of the ice small parts, such as screws and bolts, as mass produced products are highly productively coated by vacuum deposition or sputtering, also under plasma action. In a container is located a drum rotatable at high speed about its horizontal axis and in which the parts to be coated are fixed to the inner wall by centrifugal force. The surface of the inner wall is geometrically constructed such that the parts to be coated are reliably held and moved with it. The coating devices are located in the drum. A stripping device, whose spacing with respect to the inner wall is adjustable at programmable time intervals, is located in the drum and has an abutment surface directed opposite to the rotation direction.

Abstract: The heat sink is mounted on a semiconductor chip module sealed hermetically with a cap. The heat sink comprises an absorption means for absorbing the heat generated from a semiconductor chip, being inserted into an opening formed in a cap so as to make contact with a semiconductor chip sealed hermetically within a semiconductor chip module; a heat dissipation means exposed outside the cap for dissipating the heat of the semiconductor chip absorbed by the absorption means; and a contact surface disposed between the absorption means and the heat dissipation means and fixed on the upper surface of the cap, and the contact surface at least being coated with an adhesive material. The heat sink mounted on a semiconductor chip module can stably dissipate the heat produced from a semiconductor chip sealed hermetically within the semiconductor chip module.

Abstract: An apparatus for forming a thin film irradiates an electron beam on a vaporizable substance held in a crucible. A pair of electromagnets are disposed in coplanar relation and at right angles to each other to generate a magnetic field which deflects the electron beam. An alternating current is applied to the electromagnets to generate the magnetic field, and the magnitude and frequency of the current are controlled so as to scan the electron beam in a circular pattern on the vaporizable substance.

Abstract: The invention relates to a vacuum coating installation comprising a container (9) in which is disposed the material (10) to be vaporized, for example SiO. The vaporization of the material (10) herein takes place by means of an electron beam gun (11) or by means of a vaporization oven. Opposing the surface of the material to be vaporized (10) is provided a synthetic film (5) to be coated which is transported further by means of a transport arrangement (4, 6, 22 to 27). Into the space between the material (10) to be vaporized and the material (5) to be coated a microwave is irradiated from an horn antenna (13).