Abstract: An inductively coupled RF plasma reactor for processing semiconductor wafer includes a reactor chamber having a side wall and a ceiling, a wafer pedestal for supporting the wafer in the chamber, an RF power source, apparatus for introducing a processing gas into the reactor chamber, and a coil inductor adjacent the reactor chamber connected to the RF power source, the coil inductor including (a) a side section facing a portion of the side wall and including a bottom winding and a top winding, the top winding being at a height corresponding at least approximately to a top height of the ceiling, and (b) a top section extending radially inwardly from the top winding of the side section so as to overlie at least a substantial portion of the ceiling.

Abstract: A process for forming a deposited film on a substrate according to the chemical vapor deposition method comprises previously forming excited species of a gas phase compound containing atoms which become constituents constituting said deposited film, supplying the excited species onto the surface of said substrate and effecting photoirradiation on said substrate surface, thereby forming the deposited film through the surface reaction.

Abstract: An apparatus is provided for controlling the flow of gaseous reactants in a CVD reactor through the use of a body having interior and exterior regions, in which the body defines at least one flow path between the interior and exterior regions so as to create a pressure drop from the interior to the exterior of the body within the chamber. The body is disposed in a reaction chamber with a first area proximate a gaseous reactant inlet and a second area proximate a substrate support such that the substrate is positioned in proximity to the interior of the body. As such, gaseous reactants introduced into the interior of said chamber through the inlet create a pressure drop between the interior and the exterior of the body. In a preferred embodiment, the body is cylindrically shaped and contains perforations providing the flow paths. Preferably, the perforations are either more numerous or larger in the second area than the first area to create a pressure gradient in the interior of the body.

Abstract: An apparatus in a chemical vapor deposition (CVD) system monitors the actual wafer/substrate temperature during the deposition process. The apparatus makes possible the production of high quality aluminum oxide films with real-time wafer/substrate control. An infrared (IR) temperature monitoring device is used to control the actual wafer temperature to the process temperature setpoint. This eliminates all atmospheric temperature probing. The need for test runs and monitor wafers as well as the resources required to perform the operations is eliminated and operating cost are reduced. High quality, uniform films of aluminum oxide can be deposited on a silicon substrates with no need for additional photolithographic steps to simulate conformality that are present in a sputtered (PVD) type application. The result is a reduction in required process steps with subsequent anticipated savings in equipment, cycle time, chemicals, reduce handling, and increased yield of devices on the substrate.

Abstract: A plasma etching apparatus of the induction coupling type for processing an LCD substrate has a process container forming an airtight process room. A work table is arranged in the process room for supporting the LCD substrate. A vacuum pump is arranged for exhausting and setting the process room at a vacuum. An antenna block having a plurality of dielectric layers is arranged to face the work table. An RF antenna is embedded in one of the dielectric layers of the antenna block for forming an electric field. A power supply is connected to the RF antenna for applying an RF power. The lowermost layer of the antenna block is formed as a shower head for supplying a process gas into the process room from a position between the RF antenna and the work table. At least part of said process gas is turned into plasma by the electric field.

Abstract: A plasma processing apparatus for processing a base substance installed within a processing chamber into which predetermined gases are flowed and which is maintained at a predetermined pressure by producing a plasma within said processing chamber is characterized by comprising plasma producing means for producing the plasma within said processing chamber including at least two ground electrodes provided on external peripheries of said processing chamber, and an rf electrode provided on external periphery of said processing chamber between said two ground electrodes, and magnetic field producing means for producing a magnetic field orthogonal to an electric field formed by said plasma producing means.

Abstract: The present invention is directed to a plasma treating apparatus, for generating plasma in a dielectric container and for treating the surface of a substrate with the plasma generated, which includes a hot air heating system for heating the dielectric container by blowing hot air to a central location on the outside surface of the dielectric container.The present invention is further directed to a plasma treating method for generating plasma in a dielectric container and for treating the surface of a substrate with the plasma generated which includes hot air heating for heating the dielectric container by blowing hot air to the outside surface of the dielectric container to a temperature at which a thin film does not deposit on the inside surface of the dielectric container.

Abstract: A plasma processing apparatus comprises a reaction chamber to hold a high-density plasma and having a dielectric plate window, a spiral coil placed outside the reaction chamber and close to the dielectric window, and a lower electrode which holds a wafer to be processed in place and installed in the reaction chamber facing the dielectric plate. A first radio frequency current supply to the coil, a mechanism for varying the distance between the coil and the dielectric plate window, and a second radio frequency voltage supply to the lower electrode is provided. Excellent uniformity of the ion current density of the plasma and hence etching rate is achieved by making the thickness of a central part of the dielectric plate window thicker than its peripheral parts. Also, the uniformity of the plasma and the etching rate is achieved by making the induction field produced by the coil axially symmetrical about the axial center of the reaction chamber.

Abstract: A plasma reactor for carrying out plasma processing of a semiconductor substrate includes a vacuum chamber including apparatus for introducing a gas into the interior thereof, an induction coil encircling a region of the vacuum chamber, the coil being connected across an RF power source, and an electrode positioned adjacent the region and connected to the RF power source for capacitively coupling RF power to the gas in the interior of the vacuum chamber. The electrode has a surface area facing the region which is large enough to provide capacitive coupling of RF power to the gas in the region sufficient to facilitate igniting a plasma, but which is small enough so that, during steady-state maintenance of the plasma, most of the RF power coupled to the plasma from the RF power source is coupled inductively rather than capacitively.

Abstract: An inductively coupled plasma reactor and method for processing a semiconductor wafer (28). The inductively coupled plasma reactor (10) includes a plasma source (16) having a plurality of channels (38, 44) in which processing gases are independently supplied to each channel. A gas supply system (20) includes a plurality of gas feed lines (34, 35, 36) each capable of supplying an individual flow rate and gas composition to the plurality of channels (38, 44) in the plasma source (16). Each channel is surrounded by an independently powered RF coil (54, 56), such that the plasma density can be varied within each channel (38, 44) of the plasma source (16). In operation, a material layer (66) overlying a semiconductor wafer (28) is either uniformly etched or deposited by localized spatial control of the plasma characteristics at each location (64) across the semiconductor wafer (28).

Abstract: In an inductively coupled RF plasma reactor having an inductive coil antenna connected through an RF impedance match network to an RF power source, capacitive coupling from the antenna to the plasma is reduced by isolating the coil antenna from the RF power source by an isolation transformer, so that the potential of the coil antenna is floating. The output of the RF impedance match network is connected across the primary winding of the isolation transformer while the floating coil antenna is connected across the secondary winding of the isolation transformer.

Abstract: A plasma processing apparatus includes: a process chamber with a side wall capable of being evacuated; magnetic field generating means disposed externally of the side wall of the process chamber, for generating a radio frequency magnetic field in the process chamber and generating plasma through inductive coupling; a base disposed in the process chamber for placing thereon a substrate to be processed; and a cooling unit for cooling the side wall of the process chamber near at a space where the plasma is generated. It is possible to generate high density plasma under a low pressure and to prevent the inner surface of a vacuum belljar from being etched by plasma.

Abstract: An inductive coupling plasma processing apparatus is equipped with a dielectric portion through which high-frequency electric power is introduced and in which a plasma discharge is generated, and the antenna for supplying a discharge chamber with electric power is arranged near the dielectric portion. The dielectric portion is formed on a vacuum chamber having an inside space with low pressure, into which a reactive gas is introduced. The antenna surrounds the dielectric portion and the area of a nearest surface facing the dielectric portion is minimized. The antenna is desired to be so configured that a shape of its cross section perpendicular to a flow direction of a high-frequency current is a flat rectangle, and a long side of the cross section is substantially perpendicular to an outside surface of the dielectric portion.

Abstract: An apparatus for processing at least a surface of an article with a uniform plasma includes a processing chamber in which the article is disposed and a plasma source. The plasma source includes a dielectric plate having a first surface forming part of an inner wall of the processing chamber, and an electrical energy source, including a radiofrequency source and a substantially planar induction coil, the latter of which is disposed on a second surface of the dielectric plate, and to which energy from the radiofrequency source is preferably supplied through impedance matching circuitry. The substantially planar induction coil has at least two spiral portions which are symmetrical about at least one point of the substantially planar induction coil, and preferably forming a continuous "S-shape".

Abstract: This invention utilizes a large volume plasma processor to completely ionize any feedstock material and deposit the ionized and unionized species of elements of the feedstock material on deposition stages. Apparatus is provided for generating a toroidal, high temperature, low density plasma in the large volume plasma processor. Key aspects of the method provide for (a) controlling temperature by rapid heating and (b) maintaining toroidal plasma current by rapid application of increased driving voltages. The invention provides a large surface area source of any desired elements to increase safety and thruput in microchip fabrication. Other applications include nanotechnology fabrication and improvement of surface properties of materials.

Abstract: This invention relates to film-forming apparatus for forming an insulating film, for example, by the CVD method using an activated reaction gas. It is aimed at simplifying the apparatus, ensuring high film quality, enhancing the efficiency of formation of a plasma, and improving the uniformity of thickness of the produced film. The film-forming apparatus includes a plasma generator and a first gas discharger for discharging a first reaction gas into the plasma generator and a second gas discharger for discharging a second reaction gas onto a substrate. The second gas discharger includes a plurality of gas discharge pipes, in each of which a plurality of gas discharge holes are formed, whereby the second reaction gas is discharged from the gas discharge holes into contact with the activated first reaction gas and is itself activated so that a film is formed on the substrate through reaction of first and second reaction gases.

Abstract: In one aspect, the invention is embodied in an RF inductively coupled plasma reactor including a vacuum chamber for processing a wafer, one or more gas sources for introducing into the chamber reactant gases, and an antenna capable of radiating RF energy into the chamber to generate a plasma therein by inductive coupling, the antenna lying in a two-dimensionally curved surface. In another aspect, invention is embodied in a plasma reactor including apparatus for spraying a reactant gas at a supersonic velocity toward the portion of the chamber overlying the wafer. In a still further aspect, the invention is embodied in a plasma reactor including a planar spray showerhead for spraying a reactant gas into the portion of the chamber overlying the wafer with plural spray nozzle openings facing the wafer, and plural magnets in an interior portion of the planar spray nozzle between adjacent ones of the plural nozzle openings, the plural magnets being oriented so as to repel ions from the spray nozzle openings.

Abstract: A plasma processing apparatus includes a vacuum vessel, a substrate electrode, a discharge coil which is partially or wholly made to have a multiple spiral or helical configuration, a high frequency power source, and a matching circuit that is connected to the discharge coil by way of a conductor wire and connected to the high frequency power source via a connection cable, and generates plasma inside the vacuum vessel by applying a high frequency voltage to the discharge coil so as to process a substrate disposed on the substrate electrode.

Abstract: The invention is embodied in an inductively coupled plasma reactor including a vacuum chamber for holding a wafer in the interior thereof and capable of containing a plasma gas, and having an RF antenna and an RF power source for supplying RF power to the RF antenna and apparatus for electrically isolating the RF antenna from the RF power source so as to reduce capacitive coupling therebetween. Preferably, the apparatus for isolating the antenna is a transformer having a primary winding connected across the RF power source and a secondary winding connected across the RF antenna. Preferably, the reactor further includes a conductive Faraday shield having plural layers, the Faraday shield being disposed between the RF antenna and the ceiling of the vacuum chamber, the Faraday shield having eddy current-suppressing apertures in each layer thereof facing conductive portions of the shield in an adjacent layer thereof. The ceiling of the vacuum chamber acts as a gas distribution manifold.

Abstract: Capacitive coupling and RF power dissipation is advantageously reduced in the present invention by employing an RF coil having plural coil sections, each coil section connected across an RF source, commonly tapped ones of the coil sections being wound in opposite directions. Capacitive coupling and RF power dissipation is further reduced by employing a top lid having an outer insulating annulus and an inner conducting disk portion, the conducting disk portion being displaced or spaced apart from the coil by the width of the annulus. This displacement significantly reduces the RF power dissipation or coupling from the top winding of the coil to the lid. Furthermore, the plural coil sections or mirror coil configuration reduces sputtering of insulative material induced by capacitive RF coupling.

Abstract: A plasma CVD apparatus for forming a silicon film on an LCD substrate includes a container which is divided into process and upper chambers by a quartz partition plate. A work table on which the substrate is mounted is arranged in the process chamber and a lower electrode to which a high frequency potential is applied is arranged in the work table. First lower and second upper supply heads are arranged between the partition plate and the work table in the process chamber. SiH.sub.4 and H.sub.2 gas and He gases are supplied through the first and second supply heads. He gas is transformed into plasma while SiH.sub.4 and H.sub.2 gas is excited and decomposed by the plasma thus formed. Two coils are arranged in the upper chamber and high frequency voltages are applied to the coils to generate electromagnetic field to induce the transforming of He gas into plasma.

Abstract: Plasma treatment apparatus includes means to generate a plasma jet at atmospheric pressure, and means to control both the cross-sectional size of the jet and the relative speed of movement between the jet and a body being treated.

Abstract: An IC wiring connecting method for interconnecting conductive lines of the same wiring plane of an IC chip for correcting the wiring, for interconnecting conductive lines of different wiring lanes of a multilayer IC chip at the same position, or for connecting a conductive line of a lower wiring plane of a multilayer IC chip to a conductive line formed at a separate position on the same multilayer IC chip. The insulating film or films covering conductive lines to be interconnected are processed by an energy beam such as a concentrated ion beam to form holes so as to expose the respective parts of the conductive lines where the conductive lines are to be interconnected, then a metal is deposited over the surfaces of the holes and an area interconnecting the holes by irradiating the surfaces of the holes and the area by an energy beam or a concentrated ion beam in an atmosphere of a gaseous organic metal compound to form a conductive metal film electrically interconnecting the conductive lines.

Abstract: An apparatus for forming a II-VI Group compound thin film containing nitrogen as an impurity, on a substrate, comprises a container for holding a substrate, a vapor source for supplying Zn vapor on a surface of the substrate, a vapor source for supplying Se vapor on the surface of the substrate, and a discharge tube into which a nitrogen gas is introduced, having three-divided internal portions, a high-pressure portion, a middle-pressure portion, and a low-pressure portion from the gas introduction side, and supplying excitation species derived from discharge plasma generated in the low-pressure portion onto the surface of the substrate. Zn vapor and Se vapor are alternately supplied, and supply of nitrogen excitation species is performed in synchronous with supply of Zn vapor.

Abstract: A surfatron 12 is provided which includes first waveguide 32 coupled to a section of coaxial waveguide 30 to define a cavity 28 at the intersection therebetween. The coaxial waveguide 30 includes an outer cylinder 36 and an inner cylinder 34 disposed within the outer cylinder 36. Inner cylinder 34 has an end disposed proximate to a wall of first section of waveguide 32. A space 40 is defined between the end of inner cylinder 34 and the wall of waveguide 32. A discharge tube 22 is provided having a first portion disposed within inner cylinder 34 and a second portion extending through space 40 between the end of inner cylinder 34 and the wall of waveguide 32. A coil 38 is disposed around the portion of discharge tube 22 extending through space 40 between the end of inner cylinder 34 and the wall of waveguide 32.

Abstract: A diamond-like thin film of good quality is prepared homogeneously and fast in a deposition. A mesh-like acceleration electrode is provided at the opening of a chamber including a filament, and a plasma is generated in the chamber. Because the chamber is isolated electrically from the electric system of the apparatus, the high density and the equilibrium state are maintained, and the plasma density and the potential are homogenized around the mesh-like electrode. In this state, a bias potential is applied to the substrate, and the ions are accelerated according to the potential difference between the plasma and the substrate to deposit a diamond-like thin film on the substrate. Preferably, a negative potential electrode is provided before or around the substrate. Further, an insulating member is provided to surround a flight path of ions between the chamber and the substrate.