Abstract: Disclosed is a plasma process apparatus which permits generating microwaves and a magnetic field so as to bring about electron cyclotron resonance and, thus, to generate a plasma which is applied to a semiconductor wafer, comprising microwave generating means for generating said microwaves, microwave transmitting means for transmitting the microwaves, a process chamber having said semiconductor wafer arranged therein, the microwaves being introduced into said process chamber through said microwave transmitting means, process gas supply means for supplying a process gas into said process chamber, and magnetic field generating means for generating a magnetic field within the process chamber. The frequency of the microwave falls within a range between a lower limit of a cutoff frequency determined by the inner diameter of the process chamber and an upper limit of a maximum frequency at which a standing wave of the microwave does not occur on the surface of the object.

Abstract: Embodiments of the invention are directed to an etching apparatus for removing impurities from the surface of a substrate, such as a pallet and disc. Embodiments of the etching apparatus comprise a magnetic source, a cleaning chamber, a substrate transportation mechanism and a power source. The magnetic source is placed within the cleaning chamber, or vacuum chamber, which is configured to bombard the magnetic source with plasma. The substrate transportation mechanism resides within the cleaning chamber and is used to pull the pallet through the chamber between the spacing between the magnet towers. The power source, which is a DC source, is coupled to the pallet and produces an electric field which ionizes the plasma.

Abstract: In an ECR plasma generator, radio frequency ranging from 3 to 300 MHz is applied from a radio frequency power supply to an electrode which is provided in a chamber having an exhaust system and which serves as a shower head for gas introduction, and power is supplied to a coil provided at the outer periphery of the chamber, so as to form a magnetic field an integer number of times as large as a resonant magnetic field corresponding to the applied radio frequency, parallel with the direction of an electric field and to generate ECR plasma in an atmosphere of the supplied process gas.

Abstract: A plasma chamber having a magnet which produces a magnetic field such that, within a region parallel to and adjacent to the workpiece, the direction of the magnetic field is approximately the vector cross product of (i) the gradient of the magnitude of the magnetic field, and (ii) a vector extending perpendicularly from the workpiece surface toward the plasma. Alternatively, the plasma chamber includes a north magnetic pole and a south magnetic pole located at distinct azimuths around the periphery of the workpiece. The azimuth of the south magnetic pole relative to the north magnetic pole is clockwise around the central axis, and each magnetic pole faces a direction which is more toward than away from a central axis of the workpiece area. An additional aspect of the invention is a plasma chamber having a rotating magnetic field produced by electromagnets spaced around the periphery of the workpiece which receive successive fixed amounts of electrical current during successive time intervals.

Abstract: A plasma generating apparatus capable of improving the uniformity of a plasma processing and coping with a larger diameter of a substrate is obtained. Microwaves are distributed and emitted from a waveguide through the branching portions of a T branch to four rod antennas. The microwaves are introduced through four dielectric tubes into a vacuum vessel. In the vacuum vessel, a multi-cusp magnetic field and an electron cyclotron resonance region are caused by permanent magnets located around the vessel and, by an interaction between a vibrational electric field of the microwaves and a magnetic field, highly uniform plasma is generated in a region where a substrate or the like is subjected to a plasma processing.

Abstract: A small, light-weight and highly maintainable etching system and an etching method for etching a large substrate with a homogeneous etching rate are provided. The etching system comprises an agitating electric field system disposed around the substrate, an agitating power source of high frequency, medium frequency or low frequency, agitating electrodes, amplifiers and a phase controller to agitate electrons or ions to increase the etching speed and the uniformity of the etching rate by promoting activation of reactive gas and uniformalizing a plasma density.

Abstract: Controlling ion/radical ratio and monoatomic/polyatomic radical ratio in a process plasma provides improved processing performance during inductively-coupled plasma and/or helicon wave plasma processing of substrate materials. In a plasma processing method employing inductively coupled plasma, high frequency current to a high frequency antenna is intermittently supplied in a controlled manner to control the state of gas dissociation to promote formation of polyatomic radicals. In a plasma processing method employing helicon wave plasma, current supplied to a magnetic field generator is intermittently supplied in a controlled manner to promote formation of ions. In a preferred method, both the high frequency current and magnetic field generating current are varied in a controlled manner to provide a variable plasma composition, i.e., radical rich plasma or ion-rich plasma, as desired, for improved plasma processing, especially improved selective anisotropic dry etching at high etch rate.

Abstract: Dielectric bodies are arranged in waveguide portions for passing microwave radiation and for holding a plasma generating chamber 25 at a vacuum. The dielectric bodies are arranged to intersect at least an electron cyclotron resonance area of the waveguide portions. A tip end portion of the dielectric bodies at a side of the plasma generating chamber are positioned toward at a side of the plasma generating chamber from an intermediate portion in an axial direction length of a first permanent magnet which is arranged by enclosing an outer periphery of the waveguide portions, and a tip end portion of the dielectric bodies at a side of the plasma generating chamber is substantially consistent with an inner face of the plasma generating chamber.

Abstract: A plasma processing apparatus has a plurality of annular permanent magnets arranged concentrically with the same polarity in the circumferential direction at the atmosphere side of a second electrode arranged opposite to a stage on which a specimen is placed. Arrangement is provided so that the magnets located adjacent radially have opposite polarity. Furthermore, permanent magnets are arranged at the outer circumference of a vacuum vessel corresponding to a plasma generation chamber portion. A plasma processing apparatus can be provided that allows formation of uniform plasma over a large area and uniform processing of a specimen of a large diameter.

Abstract: The invention provides a microwave plasma process apparatus in which an antenna having a tubular member curved in a C shape or a spiral shape and including a slit is disposed on a sealing member for sealing a chamber, so that a microwave can be emitted through the slit to the sealing member.

Abstract: A plasma processing apparatus comprises a chamber, and an upper electrode and a lower electrode, parallelly provided in the chamber to oppose each other at a predetermined interval, for defining a plasma generation region between the electrodes. An object to be processed is mounted on the lower electrode. RF powers are supplied to the electrodes, so that a plasma generates between the electrodes, thereby performing a plasma process with respect to the object to be processed. A cylindrical ground electrode is provided around the plasma generation region in the chamber, for enclosing the plasma in the plasma generation region, and has a plurality of through holes for passing a process gas.

Abstract: Methods and devices for producing plasmas of more uniform density and greater height than plasmas generated by previously known magnetron-type plasma-generating devices. The present invention utilizes electrodes containing multiple magnets positioned such that like magnetic poles of the magnets are all facing in substantially the same direction.

Abstract: The high-frequency electric field is subjected to pulse modulation for 10 to 100 .mu.sec; the rise time of pulse is controlled to be not shorter than 2 .mu.sec but not longer than 50 .mu.sec; and the descent time of pulse is controlled to be not shorter than 10 .mu.sec but not longer than .phi..mu.sec. Thereby, the electron temperature in plasma is controlled at 2 eV or lower and the fluctuation of the density of negative ion in plasma is controlled at 20% or smaller.

Abstract: Ionizable gas supplied to an electron cyclotron resonance vacuum plasma processor chamber for semiconductor wafers is excited to a plasma state by microwave energy coupled to the chamber. The level of microwave power reflected from the chamber controls the level of microwave power derived from a source driving the ionizable gas in the chamber.

Abstract: An apparatus for forming thin films such as protective layers on both surfaces of a substrate of a magnetic memory device has an evacuable reaction chamber sandwiched between two electron cyclotron resonance plasma generators disposed on mutually opposite sides. Each plasma generator includes a wave guide for introducing microwave energy and a magnetic coil for providing a magnetic field for generating a plasma and causing the generated plasma to move to the substrate set inside the reaction chamber with a negative bias voltage applied thereto.

Abstract: The plasma processing apparatus according to the present invention comprises a processing chamber in which an object to be processed is processed, a lower electrode provided at a lower portion in the processing chamber, having a mount surface where the object is mounted, and applied with a bias voltage, gas introduce tube for introducing a processing gas into the processing chamber, an upper electrode provided fixedly on a roof portion of the processing chamber and supplied with a high-frequency power, to form plasma from the processing gas in the processing chamber, and a magnetic field formation portion provided fixedly on the roof portion of the processing chamber, for forming a magnetic field in the processing chamber.

Abstract: A plasma process apparatus comprises a plasma process chamber, substrate-to-be-processed supporting means for supporting a substrate to be processed, provided in the process chamber, gas introducing means, gas evacuation means, microwave introducing means using an endless circular waveguide having a plurality of slots arranged around the process chamber, and radio frequency power supplying means for supplying radio frequency power to the substrate supporting means. The above arrangement permits a uniform plasma to be generated in high density and in a large area even under the low-pressure condition of about 1 mTorr without using a magnetic field, thus enabling etching of large-area substrates in super fine patterns and at high speed.

Abstract: A microwave plasma processing apparatus comprises a plasma generation chamber, a processing chamber communicating with the plasma generation chamber, supporting of a substrate to be processed arranged in the processing chamber, a circular waveguide with slots arranged around the plasma generation chamber, and a magnetic field generation unit for generating a cusp magnetic field in the plasma generation chamber. A microwave plasma processing method using this apparatus is provided, to maintain a high-density and large-area uniform plasma, even at a low temperature, and even in a low-pressure region having a pressure of 1 mTorr.

Abstract: A method and apparatus for forming a large area functional deposited film on the surface of a continuously moving web member by means of a microwave plasma CVD process, characterized in that at the exterior face of the circumferential wall comprising a curved continuously moving web member of the microwave plasma CVD film-forming chamber, a member having a function of transporting the web member while pressing it and being provided with a mechanism capable of controlling the temperature of the web member is disposed.

Abstract: A method and apparatus employing a microwave applicator for use with an ECR plasma source for applications including etching and chemical vapor deposition is provided. A magnetic field is generated by magnets circumferentially arranged about a chamber that is symmetrical about its longitudinal axis. The microwave applicator, which comprises at least one pair of coaxial resonant multiport microwave antenna arrays, injects and distributes microwave power about a plasma forming portion of the chamber. The antenna arrays include a plurality of radiating stubs for radiating microwave power. The stubs are positioned along the arrays at predetermined intervals and selected orientations relative to a coaxial transmission line, for efficiently distributing microwave power uniformly about the plasma forming portion.

Abstract: A plasma physical vapor deposition (PVD) reactor configured for self sustained sputtering in which no sputtering working gas is required but the sputtered ions are sufficient to sustain the sputtering from the target. According to the invention, the power applied to the sputtering target is monitored to determine if sustained self-sputtering is being maintained. If the electrical parameters or other parameters in the chamber indicate that the self-sustained plasma has collapsed, a reinitialization procedure is begun including: admitting a working gas such as argon into the chamber; again exciting the plasma; and then effectively eliminating the working gas.

Abstract: A plasma processing apparatus is provided with at least one waveguide portion for introducing microwaves, an electron heating space chamber formed on a downstream side with respect to a dielectric body in the waveguide portion, and a plasma generating space chamber coupled with the electron heating space chamber. A first static magnetic field generating device surrounds the electron heating space chamber using permanent magnets, producing a strong magnetic field exceeding an electron cyclotron resonance magnetic field strength along a propagation direction of the microwave in the electron heating space chamber and in a microwave leading-out portion of the dielectric body, and forming a cusped magnetic field.

Abstract: The dry etching device according to the present invention comprises a vacuum chamber connected to a vacuum source, a gas supply unit including a gas supply source and a number of gas supply pipes for leading a gas from the gas supply source to an inside of the vacuum chamber, and a number of electrical discharge electrodes, respectively arranged inside the vacuum chamber, for changing the gas led to the inside of the vacuum chamber into a plasma, active ions or both of the plasma and the active ions, wherein the electrical discharge electrode has a number of circular or polygonal ring shaped permanent magnets detachably interfitted into a shaft at regular intervals via each insulator in a magnetizing direction of the each permanent magnet, and aligned so that each magnet pole of the permanent magnets adjacent to each other may be equal to that of the adjacent permanent magnet.

Abstract: Gas diffuser bolt (35) is used to improve process gas flow from near the center of process chamber (40) across workpiece (58) to exhaust ports near the periphery of process chamber (40), process nonuniformity is improved by adjusting the vertical position of each varying magnetic pole (10) relative to two-pole rounded oblong dielectric window (22), differential driving of metal voltage reference plate (18) and workpiece electrode (60) reduce the voltage between the plasma and process chamber (40), reducing particulates and improving efficiency, and temperature control of metal voltage reference plate (18) improves process chamber (40) cleaning.

Abstract: A film-forming apparatus for making it possible to form a thin film on a web-like high-molecular film substrate, comprising: a vacuum chamber provided with an evacuator; a gas introducing member for introducing a thin-film-forming gas into the vacuum chamber; a plasma generating member for generating plasma in the vacuum chamber; a substrate carrying member for carrying the substrate to the neighborhood of the plasma generated by the plasma generating member; and a bias voltage applying member for applying a desired bias voltage to the substrate.

Abstract: A method for excitation of a plasma, characterized in that it comprises the step of subjecting a gas to an electric field generated by an electrode system comprising n electrodes, n being an integer greater than or equal to 3, preferably between 3 and 30, each of the n electrodes being connected to one of the following AC voltages: ##EQU1## where: f is a frequency in the range of 10 to 10000 Hz, preferably 30 to 200 Hz, more preferably 50 to 60 Hz, U.sub.0 is a voltage in the range of 50 to 10000 V,at least one electrode being connected to U.sub.r, at least one electrode being connected to Us and at least one electrode being connected to U.sub.t. The invention also concerns an electrode system for carrying out the method.

Abstract: A plasma source uses radio frequency electromagnetic radiation to ionize and dissociate gas molecules into reactive species within a plasma generation tube and emits the species to react with and remove contaminants from surfaces on a spacecraft. The source of the radiation is an antenna brazed to the outside of the plasma generation tube. Permanent magnets ring the plasma generation tube within a metallic housing to generate a magnetic field. Pole pieces are provided to improve the strength of the field and to improve its uniformity and axial orientation within the plasma generation tube. A plenum and a gas diffusing element distribute gas entering the plasma generation tube.

Abstract: A plasma treatment device for forming a high-quality thin film with fewer surface flaws and etching by preventing the generation of fine powders from deposited films in a film-forming chamber, by means of plasma treatment using gaseous starting materials. The plasma treatment chamber device includes a plasma generation chamber 11, a power-supplying mechanism for supplying power to this chamber, a film-forming chamber 113 to be spatially connected to the plasma generation chamber 11, a magnetic field generation mechanism 14 provided around this film-forming chamber for forming a multicusp magnetic field therein, an evacuation mechanism for evacuating the chamber, a first gas-supplying mechanism 16 for supplying gaseous starting materials and a second gas-supplying mechanism 17 for supplying gaseous materials for forming films. An inner wall surface 113b of the film-forming chamber is located in an area having a multicusp magnetic field with an intensity of from 50 to 200 G.

Abstract: The present invention discloses a plasma etching apparatus which can protect the surface of the wafer from a damage due to collisions among the etching ions and can also process a plurality of wafers only by one-time plasma generation. In the etching apparatus of the present invention, a plurality of wafers are loaded in the chamber by a plurality of wafer support members which are located vertically round the gas dispersion tube used as a cathode electrode, and magnetic field formation means are provided to form a magnetic field around each wafer.

Abstract: A plasma processing apparatus is provided. In the apparatus, an inside surface of a process chamber is prevented from having its quality varied or becoming a heavy metal contamination source by plasma in the chamber, and at the same time the plasma characteristic is stabilized over time. In a plasma processing apparatus including a plasma generating unit, a process chamber capable of having its inside pressure reduced, a gas supply system for supplying a gas to the process chamber, a sample table for holding a sample and a vacuum pumping system, the process chamber has an outer cylinder capable of withstanding depressurization and an inner cylinder arranged inside the outer cylinder and being spaced therefrom through a gap, and a heater and a temperature control are provided in the outer cylinder. A non-magnetic metallic material not containing heavy metals, or ceramic, carbon, silicon or quartz is used for the inner cylinder.

Abstract: A plasma processing apparatus including a chamber, a device for exhausting the chamber, an electrode, which is provided within the chamber, for mounting a workpiece to be processed, a device for generating a bias electric field near a wall surface of the chamber, a device for generating a magnetic field substantially parallel to the chamber wall to thereby generate a magnetron discharge by the interaction between the bias electric field and the magnetic field, and a device for providing a high frequency into the chamber.

Abstract: A plasma reactor chamber uses an antenna driven by RF energy (LF, MF, or VHF) which is inductively coupled inside the reactor dome to provide a plasma source. The antenna generates a high density, low energy plasma inside the chamber. The chamber includes a plurality of magnets for generating magnetic fields. Ion flux is concentrated in certain areas of the chamber and is diverted from other areas of the chamber by using these magnetic fields. Various magnetic and voltage processing enhancement techniques are disclosed, along with etch processes, deposition processes and combined etch/deposition processes. The disclosed invention provides a means of cleaning the deposition residues from the reactor walls while minimizing damage to the wafer pedestal.

Abstract: A helicon plasma source is controlled by varying the axial magnetic field or rf power controlling the formation of the helicon wave. An energetic electron current is carried on the wave when the magnetic field is 90 G; but there is minimal energetic electron current when the magnetic field is 100 G in one particular plasma source. Similar performance can be expected from other helicon sources by properly adjusting the magnetic field and power to the particular geometry. This control for adjusting the production of energetic electrons can be used in the semiconductor and thin-film manufacture process. By applying energetic electrons to the insulator layer, such as silicon oxide, etching ions are attracted to the insulator layer and bombard the insulator layer at higher energy than areas that have not accumulated the energetic electrons. Thus, silicon and metal layers, which can neutralize the energetic electron currents will etch at a slower or non-existent rate.

Abstract: For generating uniform high-density plasma over a large area with a low power thereby achieving high-quality plasma process at a high speed even at a low temperature, there is provided a microwave plasma processing apparatus comprising a plasma generation chamber having a periphery separated from the ambient air by a dielectric member, microwave introduction means utilizing an endless annular wave guide tube provided around the plasma generation chamber and provided with plural slots, a processing chamber connected to the plasma generation chamber, support means for a substrate to be processed provided in the processing chamber, gas introduction means for the plasma generation chamber and the processing chamber, and evacuation means for the plasma generation chamber and the processing chamber, wherein the circumferential length L.sub.g of the endless annular wave guide tube, the wavelength .lambda..sub.g of the microwave in the endless annular wave guide tube, the circumferential length L.sub.

Abstract: A process chamber is described wherein a plasma is generated by electron-cyclotron resonance (ECR) and is isolated from chamber walls by a magnetic field from two diametrically-opposed solenoids. A substance to be deposited on a substrate is introduced into the chamber by laser ablation, evaporation, or other techniques. The ECR plasma has a relatively large volume to ensure a homogeneous influx of material, and a low potential that results in less aggressive ion bombardment of the substrate. The process chamber can be used in a variety of processes, including deposition and oxidation of superconducting metal oxides, and reduction of indium-tin-oxide with nitrogen at low temperatures.

Abstract: A plasma diffusion control apparatus is provided with a plurality of wires through which current flows in parallel so that lines of magnetic force are generated in a direction parallel to the plasma wall of the diffusion chamber wall. It is preferable that the wires are located in the neighborhood of the diffusion chamber at equal intervals, and arranged so that the direction of the magnetic field generated by wires are parallel to the direction of movement of the plasma. Since the magnetic field is formed in a direction parallel to the inner wall of the diffusion chamber, it is possible to prevent the diffusion of the plasma to the chamber wall. As a result there is no region which is influenced by strong local magnetic fields perpendicular to the plasma chamber wall, so that it is possible to solve the problems caused by substantial amounts of polymer deposition on the inner wall of the plasma diffusion chamber.

Abstract: A plasma processing apparatus includes a plasma processing chamber having a stage for placing a substrate to be plasma processed, an exhaust port and a gas introduction nozzle for plasma processing coupled therewith, and a cavity resonator for closing the plasma processing chamber in vacuum manner and coupled through a microwave introducing window through which microwaves are introduced and having slots for radiating microwaves to the plasma processing chamber. Microwaves having increased intensity of an electromagnetic field is supplied to the processing chamber to produce plasma to effect processing of the substrate. An area in which diffusion of plasma is suppressed to reduce loss is formed only in the vicinity of an inner wall of the processing chamber.

Abstract: A process for forming a deposited film on a substrate according to the chemical vapor deposition method comprises previously forming excited species of a gas phase compound containing atoms which become constituents constituting said deposited film, supplying the excited species onto the surface of said substrate and effecting photoirradiation on said substrate surface, thereby forming the deposited film through the surface reaction.

Abstract: A microwave plasma CVD method for continuously forming a large area and length functional deposited film, the method comprises: continuously moving a substrate web in the longitudinal direction by paying out it by a pay-out mechanism and taking up it by a take-up mechanism; establishing a substantially enclosed film-forming chamber by curving and projecting said moving substrate web to form a columnar portion to be the circumferential wall of said film forming chamber on the way moving from said pay-out mechanism toward said take-up mechanism; introducing a film-forming raw material gas through a gas feed means into said film-forming chamber; at the same time, radiating a microwave energy in said film-forming chamber by using a microwave applicator means, which is so designed that it can radiate a microwave energy in the direction parallel to the microwave propagating direction, to generate microwave plasma in said film-forming chamber, whereby continuously forming a deposited film on the inner wall face of s

Abstract: A method and apparatus are disclosed employing a microwave applicator for use with an electron cyclotron resonance (ECR) plasma source for applications including, but not limited to, etching and chemical vapor deposition. A magnetic field is generated by magnets circumferentially arranged about a chamber that is symmetrical about its longitudinal axis. The microwave applicator, which comprises one or more pairs of slotted antenna arrays, injects and distributes microwave power about the entire periphery of a plasma forming portion of the chamber. The antenna arrays include a plurality of radiating stubs for radiating microwave power. The stubs are positioned along the arrays at predetermined intervals for efficiently distributing microwave power uniformly about the periphery of the plasma forming portion. The position and orientation of the radiating stubs cause microwave power to be launched into the plasma in the form of propagating waves with a polarization suitable of electron cyclotron heating.

Abstract: A microwave plasma processing apparatus comprises a vacuum processing chamber, a substrate disposed within the vacuum processing chamber, a microwave guide coupled to the vacuum processing chamber, and fins for dividing a microwave in the electric field direction. The length of fins are different such that the uniformity of the film thickness distribution on the substrate of large area can be improved.

Abstract: A plasma processing apparatus and method is equipped with a vacuum chamber, helmholtz coils, a microwave generator and gas feeding systems. An auxiliary magnet is further provided in order to strengthen the magnetic field in the vacuum chamber to produce centrifugal drifting force which confine the plasma gas about the center position of the vacuum chamber.

Abstract: A magnetic field enhanced plasma etch reactor system for generating a radially-directed magnetic field within a reaction chamber. The reactor system comprises a reaction chamber for containing a plasma and a plurality of electromagnetic coils disposed about a reaction region within the reaction chamber. When each coil is driven with a current of similar magnitude, the electromagnetic coils produce a radially-directed magnetic field within the reaction chamber. The radially-directed magnetic field uniformly distributes the plasma throughout a bulk plasma region. Consequently, a substrate that is etched by such a uniform plasma has an improved uniformity in the etch pattern on the substrate.

Abstract: A static chuck and a workpiece push-up pin are disposed on a susceptor which is one of opposed electrodes generating plasma. The push-up pin and the susceptor are electrically connected. A grounding circuit which discharges electric charges remaining on the susceptor is disposed in parallel with an RF power supply circuit which supplies RF power to the susceptor. Thus, electric charges remaining in the power supply circuit can be discharged and an abnormal discharging between the push-up pin and the susceptor can be prevented.

Abstract: According to a thin film forming method, at least one type of gas is activated to produce a plurality of species having positive or negative charges. The plurality of species pass through an electric field or magnetic field to extract specific species. The specific species are supplied to a substrate surface. Thereafter, the specific species are chemically reacted with each other to form a thin film. This extraction is performed using a difference in track corresponding to a ratio of mass to charge of the species passing through the electric field.

Abstract: Sticking layer forming material is provided so as to be exposed to plasma, partially on an anti-deposition plate mounted on the inner wall of a process chamber of an ECR (or microwave) plasma etching system. The sticking layer forming material is refractory metal such as W or refractory metal silicide. After a wafer with a photoresist layer is set on a susceptor, a plasma process (aging process) is performed to form a sticking layer of low hardness on the inner wall of the process chamber, the sticking layer containing WCl.sub.5, WCl.sub.6, etc. and resist components. This sticking layer prevents Si oxyhalide from being scaled off the inner wall of the process chamber during the etching process of Si-containing material after the aging process. The sticking layer forming material may be provided on a wafer and the resist components may be supplied from gas. In this manner, particles are reduced which are otherwise generated more while Si-containing material such as silicide is etched.

Abstract: An array of hollow cathodes can be made by mounting a housing connected to a source of plasma precursor gas and to a source of power in a vacuum chamber, said housing having a plurality of uniformly spaced openings in a wall thereof into which a plasma can be generated. A substrate to be treated is mounted parallel to and spaced a preselected distance from said openings. In operation, a plurality of plasma torches is created extending from the openings which can plasma etch and remove coatings on said substrate.

Abstract: To improve an actual exhaust speed, in a vacuum processing device for processing a work located in a vacuum processing chamber by using a processing gas introduced into the vacuum processing chamber, the vacuum processing device having means for introducing the processing gas into the vacuum processing chamber, means for controlling a gas flow of the processing gas, and means for exhausting the processing gas after the work is processed by the processing gas; the exhausting means comprises an exhaust pump, a buffer space extended in a direction substantially perpendicular to a center of the work with an extended area larger than a size of a suction port of the exhaust pump, and a gas outlet formed on a back side of a surface of the work to be processed, the gas outlet having a size substantially equal to or larger than the size of the suction port of the exhaust pump. Further, the exhaust arrangement can be provided at a shifted position so as to allow a work space beneath a work table.

Abstract: An object of the present invention is to increase the energy efficiency of a plasma apparatus and provide a high-frequency magnetron plasma apparatus which can precisely control plasma. The plasma apparatus has a susceptor electrode, a plasma exciting electrode, magnets mounted on the plasma exciting electrode, and a magnetic shield provided around the plasma exciting electrode, all of which are arranged in a vacuum chamber. The magnetic shield has a high impedance for a high frequency. The magnetic shield is preferably earthed with a direct current, more preferably earthed through an inductance.

Abstract: A plasma processing method for processing a thin film formed on a substrate or forming a thin film on a substrate within a vacuum vessel provides for supplying a gas into the vacuum vessel, producing a plasma in the vacuum vessel by applying a microwave to the gas, and creating a static magnetic field represented by magnetic lines of force parallel to the direction of propagation of the microwave in the vacuum vessel by a magnetic circuit. The field intensity of the static magnetic field is determined taking into consideration the frequency of the microwave so that the same is lower than the field intensity at which electron cyclotron resonance occurs.