Abstract: In a plasma processing method and apparatus, microwaves are radiated from a slot antenna set at the bottom of a resonator, a plasma is generated using the microwave and a sample is processed by the plasma. A plasma having a ring-form is generated by the microwaves radiated from the slot antennas, which are disposed at an angle which is neither in parallel to nor perpendicular to a surface current flowing on a slot antenna plate. Thereby, the sample is uniformly processed.

Abstract: Introducing a silane reactant gas into a Jet Vapor Deposition microwave discharge source for deposition of silicon nitride films at increased rate. An array of regularly spaced micro-inlets in a JVD microwave discharge source delivers the silane reactant gas and act as non-interfering silane injectors to give a rate increase proportional to the number of micro-inlets while preserving deposited film quality.

Abstract: A film forming/modifying system includes a film forming apparatus which has an alcohol supply unit and forms a metal oxide film on a semiconductor wafer in a vacuum atmosphere in which a vaporized metal oxide film material and a vaporized alcohol exist, a film modifying apparatus which has a UV irradiation unit for irradiating a UV ray on ozone to generate active oxygen atoms, and modifies the metal oxide film by exposing the metal oxide film to the active oxygen atoms in a vacuum atmosphere, and a common transfer chamber commonly coupled to the film forming apparatus and the film modifying apparatus to transfer the target process object between the film forming apparatus and the film modifying apparatus while maintaining the vacuum state.

Abstract: An ion flow forming method and apparatus for attracting ions from a plasma generated in a plasma generation chamber and forming a flow of the ions are disclosed. This ion flow forming apparatus includes the plasma generation chamber having a plasma diffusion outlet port, a processing chamber accommodating a target object, for example, two electrodes arranged between the plasma generation chamber and the target object in the processing chamber, and a potential control unit. This potential control unit controls voltages to be applied to the plasma generation chamber, the two electrodes, and the processing chamber, so that the step of diffusing the plasma generated in the plasma generation chamber in a space between the two electrodes, the ion attraction step of repelling electrons in the diffused plasma toward the plasma generation chamber and attracting the ions in the plasma in an opposite direction, and the ion flow formation step of directing the ions toward the target object are sequentially performed.

Abstract: A CVD device for coating the inside of a hollow body, comprising a coating chamber, a microwave plasma-igniting device, a gas-supply device and an optical detective device, wherein the plasma-igniting device and optical detective device are connected to a control and analysis unit, analyzing the time correlation of ignition pulses and light pulses, and the intensity of at least one emission line of the plasma.

Abstract: A compact microwave downstream plasma system includes, within a significantly small portable housing unit, a power supply, a microwave generator, a non-linear waveguide, a circulator, a dummy load, a plasma applicator, and an igniter. The microwave generator supplies microwaves to the guide to the applicator. The guide includes several curved regions that allow for a more compact design. The applicator is configured to generate a plasma and output reactants that can be used to remove photoresist layers from a wafer within a process reactor.

Abstract: A plasma processing apparatus according to the present invention includes a microwave guide for introducing a microwave, an air-tight chamber for internally setting an object to be processed, for generating a plasma by introducing the microwave introduced by the microwave guide and by supplying a reaction gas, and for processing the object by an active species generated by the plasma, a dielectric window provided between the microwave guide and the air-tight chamber, for enclosing the air-tight chamber, a top plate provided with a microwave guide port arranged with a gap maintained from the dielectric window, and cooling means provided for the top plate, for cooling heat caused by generation of the plasma, e.g., a cooling means for causing a cooling gas to flow in the gap between the dielectric window and the top plate.

Abstract: An apparatus and method for reducing the production of white powder in a process chamber used for depositing silicon nitride. Steps of the method include heating at least a portion of a wall of the process chamber; providing a liner covering a substantial portion of a wall of the process chamber; providing a remote chamber connected to the interior of the process chamber; causing a plasma of cleaning gas in the remote chamber; and flowing a portion of the plasma of cleaning gas into the process chamber.

Abstract: An apparatus and methods for an upgraded CVD system that provides a plasma for efficiently cleaning a chamber, according to a specific embodiment. Etching or depositing a layer onto a substrate also may be achieved using the upgraded CVD system of the present invention. In a specific embodiment, the present invention provides an easily removable, conveniently handled, and relatively inexpensive microwave plasma source as a retrofit for or a removable addition to existing CVD apparatus. In a preferred embodiment, the remote microwave plasma source efficiently provides a plasma without need for liquid-cooling the plasma applicator tube. In another embodiment, the present invention provides an improved CVD apparatus or retrofit of existing CVD apparatus capable of producing a plasma with the ability to efficiently clean the chamber when needed.

Abstract: An apparatus and methods for a CVD system incorporates a plasma system for efficiently generating a plasma remotely from a substrate processing zone. The remotely generated plasma may be used to clean unwanted deposits from a chamber, or may be used during substrate processing for etching or depositing processes. In a specific embodiment, the present invention provides an easily removable, conveniently handled, and relatively inexpensive microwave plasma source mounted on the lid of a deposition system. The remote microwave plasma source has a plasma reaction volume that is relatively large compared to a plasma applicator tube volume. Locating the gas inlet between the plasma reaction volume and a microwave power coupler improves the conversion efficiency of microwave energy to ionic plasma species.

Abstract: An apparatus and methods for an upgraded CVD system providing a remote plasma for efficiently cleaning a chamber, according to a specific embodiment. Etching or depositing a layer onto a substrate also may be achieved using the upgraded CVD system of the present invention. In a specific embodiment, the present invention provides apparatus for an easily removable, conveniently handled, and relatively inexpensive, robust microwave plasma source as a retrofit for or a removable addition to existing CVD apparatus. The present invention provides an improved CVD apparatus or retrofit of existing CVD apparatus capable of producing a remote plasma for efficiently cleaning the chamber.

Abstract: A method for treating the surface of a semiconductor layer includes the step of removing an oxide from the surface of a semiconductor layer by adding fluorine or fluoride to hydrogen radicals separately from plasma atmosphere and thereafter exposing the semiconductor layer to the mixed gas and hydrogen-terminating the surface.

Abstract: The present invention provides a plasma treatment system having a reaction chamber in which a plasma is generated to be irradiated onto a sample held on a sample holder in the reaction chamber. The reaction chamber has a top covered by a dielectric plate. The plasma treatment system also has an opposite electrode having a plurality of windows through which microwave is transmitted into the reaction chamber for causing the plasma, wherein the opposite electrode is provided over a top surface of the dielectric plate so that the opposite electrode is separated by the dielectric plate from the plasma generated in the reaction chamber.

Abstract: A plasma process apparatus comprises a plasma process chamber, substrate-to-be-processed supporting means for supporting a substrate to be processed, provided in the process chamber, gas introducing means, gas evacuation means, microwave introducing means using an endless circular waveguide having a plurality of slots arranged around the process chamber, and radio frequency power supplying means for supplying radio frequency power to the substrate supporting means. The above arrangement permits a uniform plasma to be generated in high density and in a large area even under the low-pressure condition of about 1 mTorr without using a magnetic field, thus enabling etching of large-area substrates in super fine patterns and at high speed.

Abstract: A method and apparatus employing a microwave applicator for use with an ECR plasma source for applications including etching and chemical vapor deposition is provided. A magnetic field is generated by magnets circumferentially arranged about a chamber that is symmetrical about its longitudinal axis. The microwave applicator, which comprises at least one pair of coaxial resonant multiport microwave antenna arrays, injects and distributes microwave power about a plasma forming portion of the chamber. The antenna arrays include a plurality of radiating stubs for radiating microwave power. The stubs are positioned along the arrays at predetermined intervals and selected orientations relative to a coaxial transmission line, for efficiently distributing microwave power uniformly about the plasma forming portion.

Abstract: The deposited film forming apparatus of the present invention capable of forming a deposited film having a small number of structural defects and a light-receiving member for electrophotography for forming a light-receiving member for electrophotography having excellent image characteristics, which comprises means for supplying a source gas into a reaction vessel capable of reducing a pressure in which said substrate is arranged, and high-frequency power supply means for supplying a high-frequency power into said reaction vessel in which said substrate is arranged, the source gas being decomposed by the high-frequency power to be able to form a deposited film on the substrate, wherein a supply portion of said high-frequency power supply means is constituted by a plurality of members.

Abstract: A plasma processing apparatus is provided with at least one waveguide portion for introducing microwaves, an electron heating space chamber formed on a downstream side with respect to a dielectric body in the waveguide portion, and a plasma generating space chamber coupled with the electron heating space chamber. A first static magnetic field generating device surrounds the electron heating space chamber using permanent magnets, producing a strong magnetic field exceeding an electron cyclotron resonance magnetic field strength along a propagation direction of the microwave in the electron heating space chamber and in a microwave leading-out portion of the dielectric body, and forming a cusped magnetic field.

Abstract: A plasma reactor for generating and maintaining plasma. The plasma reactor has a resonant cavity whose cross-section tapers in summit regions in which the wall of the resonant cavity is closed to such an extent that an excited field mode in the region of the cross-sectional tapered portions displays main peaks whose maximum field intensity is increased relative to the field intensity of adjacent secondary peaks. A reaction unit is provided in the region of a main peak with a substrate which is to be processed and which can be coated in the gas phase of the plasma. As a result of the field intensity distribution brought about by a resonant cavity of the given shape, with main peaks which are greatly increased with respect to secondary peaks, process parameters such as gas pressure and coupled electromagnetic power can be selected very largely independently of one another when the plasma is in a stable situation, without the plasma igniting undesirably in the region of the secondary peaks.

Abstract: The present invention provides systems, methods and apparatus for high temperature (at least about 500-800.degree. C.) processing of semiconductor wafers. The systems, methods and apparatus of the present invention allow multiple process steps to be performed in situ in the same chamber to reduce total processing time and to ensure high quality processing for high aspect ratio devices. Performing multiple process steps in the same chamber also increases the control of the process parameters and reduces device damage. In particular, the present invention can provide high temperature deposition, heating and efficient cleaning for forming dielectric films having thickness uniformity, good gap fill capability, high density, low moisture, and other desired characteristics.

Abstract: A plasma processing apparatus includes a conductive thin film provided on a surface of a microwave introducing member which is exposed to a processing chamber, in which an object to be processed is placed. The conductive thin film is provided at the entire portion excluding a transmission portion, through which microwaves pass into the processing chamber. The conductive thin film is grounded to act as an electrode.

Abstract: A line plasma source (20) comprises a plasma chamber (30) configured so that plasma (32) is situated remotely and on-edge with respect to a polycrystalline silicon surface (20S) to be treated, thereby preventing damage to the surface, facilitating treatment of large substrates, and permitting low temperature operation. Active species exit the plasma chamber through a long narrow ("line") outlet aperture (36) in the plasma chamber to a reaction zone (W) whereat the active species react with a reaction gas on the polycrystalline silicon surface (e.g., to form a deposited thin film). The polycrystalline silicon surface is heated to a low temperature below 6000.degree. C. Hydrogen is removed from the reactive surface in the low temperature line plasma source by a chemical displacement reaction facilitated by choice of dominant active species (singlet delta state of molecular oxygen).

Abstract: A remote source of partially ionized plasma gas having ions and excited neutral atom species therein is provided. A chamber having a metallic outer shell and an inner insulative tube, is operated as a microwave resonant cavity, preferably having a diameter of about one quarter of the operating wavelength. A waveguide couples microwave energy from a source to a slot cut into the metallic outer shell of the cavity. Microwave energy passes through the inner energy transparent tube and excites reactant gases supplied from an input tube. Plasma is conducted from the cavity by a plasma output tube coupled into a processing chamber and controlled pressure pumping system.

Abstract: A plasma applicator including a cylindrically-shaped outer tube; a cylindrically-shaped plasma tube located within and concentric with the outer tube, and having a first end and a second end; a first support located at the first end of the plasma tube; a seal surrounding the plasma tube at its first end, compressed between the plasma tube and the first support, and located at a first distance from the first end of the plasma tube; and a shield extending a second distance into the plasma tube.

Abstract: The present invention provides a method and apparatus for limiting residue build-up by lining with a ceramic material the exhaust plenun and exhaust manifold of a processing chamber. In another aspect of the invention, the inventors have used an air gap between the ceramic liner and the processing chamber walls to increase the dielectric value of the ceramic liner, and further inhibit the build-up of residues. In another aspect, the ceramic liner has been found to retain sufficient heat to allow the elimination of heaters typically used to heat the aluminum walls during a clean operation, if the clean operation is commenced immediately after a process step so that the ceramic retains the necessary heat from the previous processing step. The provision of an air gap aids in this heating, preventing the ceramic heat from being drawn off by direct contact with the aluminum walls. In a preferred embodiment, the ceramic liners are attached to the chamber walls with TEFLON.RTM. (polytetrafluoroethylene) screws.

Abstract: A surface processing device includes: a first gas supplying passage disposed near a surface of a wafer for supplying TEOS insusceptible to heating by microwave; a second gas supplying passage disposed near the wafer surface for supplying H.sub.2 O susceptible to heating by microwave; and a microwave generating unit disposed near the wafer surface for irradiating TEOS supplied from the first supplying passage and H.sub.2 O gas supplied from the second gas supplying passage with microwave and selectively heating only H.sub.2 O so that TEOS reacts with H.sub.2 O to form an SiO.sub.2 film on the wafer surface. Thus, a surface processing device capable of precisely controlling CVD reaction and thus forming a thin film having good step coverage is provided. A method of processing surfaces is also provided.

Abstract: The present invention provides a protective shield for a plasma etcher. The protective shield 40 protects the chamber wall 30 around the etch detect window from plasma etching and electrical arcing. The invention comprises a plasma etcher 10 has a wall 30 surrounding a chamber 14. The wall has an opening 16. The wall 30 having an inside face 30A and an outside face 30B. An opening edge 30C defines the opening 16. A window 24 covers over the opening 16 and over a portion of the outside face 30B of the wall. The protective shield 40 covers the opening edge 30C around the opening 16 and a portion of the inside face 30A of the wall 30 around the opening 16. The shield 40 is composed of an electrically insulating and plasma resistant material whereby the protective shield 40 prevents the chamber from arching and generating particles and extends the lifetime of the wall 30.

Abstract: In a plasma processing apparatus including a plasma chamber having a narrow window, and a rectangular waveguide for coupling with the plasma chamber, the rectangular waveguide has a long slot disposed in an E-plane thereof so as to oppose the narrow window of the plasma chamber and to extend along a waveguide-axis direction of the rectangular waveguide. There is further provided at least two long slots disposed in at least one rectangular waveguide, and the longitudinal length of each long slot is set to 1/2 or more of a free-space wavelength of the microwave. Further, the long slots are disposed so as to be parallel to each other such that adjacent long slots are shifted from each other by (2n-1)/4 of the free-space wavelength of the microwave in the waveguide-axis direction of the rectangular waveguide, where n is a natural number.

Abstract: For generating uniform high-density plasma over a large area with a low power thereby achieving high-quality plasma process at a high speed even at a low temperature, there is provided a microwave plasma processing apparatus comprising a plasma generation chamber having a periphery separated from the ambient air by a dielectric member, microwave introduction means utilizing an endless annular wave guide tube provided around the plasma generation chamber and provided with plural slots, a processing chamber connected to the plasma generation chamber, support means for a substrate to be processed provided in the processing chamber, gas introduction means for the plasma generation chamber and the processing chamber, and evacuation means for the plasma generation chamber and the processing chamber, wherein the circumferential length L.sub.g of the endless annular wave guide tube, the wavelength .lambda..sub.g of the microwave in the endless annular wave guide tube, the circumferential length L.sub.

Abstract: Treatment systems and associated methods for exposing one or more articles to at least one treatment source are disclosed herein. In one embodiment the system includes a single treatment source. The treatment source and the article or articles being treated are positioned in separately evacuable chambers. In a method of using the first embodiment, the article or articles can be removed from a handling chamber while the treatment source remains in an evacuated environment within a source chamber. Multi-source treatment systems and associated methods are also disclosed herein. Each treatment source in the multi-source systems is positioned in a respective evacuable chamber completely isolated from the other sources which make up the overall system. An evacuable multi-source handling chamber is arranged for selective movement between the source chambers.

Abstract: A process for forming a deposited film on a substrate according to the chemical vapor deposition method comprises previously forming excited species of a gas phase compound containing atoms which become constituents constituting said deposited film, supplying the excited species onto the surface of said substrate and effecting photoirradiation on said substrate surface, thereby forming the deposited film through the surface reaction.

Abstract: An improved plasma enhanced chemical vapor deposition (CVD) reactor is provided for the synthesis of diamond and other high temperature materials such as boron nitride, boron carbide and ceramics containing oxides, nitrides, carbides and borides, or the like. An aspect of the present method enables a plasma to substrate distance to be optimized for a given surface. This has been found to enable a substantially uniform thin film coating of diamond or like material to be deposited over a substrate.

Abstract: A thermal spray apparatus for depositing a coating on to a substrate is provided which includes a plasma generator for selectively changing gas from a gaseous state to a plasma, and apparatus for filtering plasma. Powder particles entrained in the plasma change from a solid state to a molten state. The apparatus for filtering the plasma permits only a high intensity region of the plasma to pass through to the substrate.

Abstract: An apparatus and method for generating a plasma within a volume containing a mixture of gaseous species. To generate the plasma, at least one large area applicator, which is a part of this invention, is employed. At least one microwave generator introduces microwave power into the applicator by means of suitable waveguides and couplers.

Abstract: A plasma reactor has plural dielectric gas injection tubes extending from a gas injection source and through a microwave guide and into the top of the reactor chamber. The semiconductor wafer rests near the bottom of the chamber on a wafer pedestal connected to a bias RF power source which is controlled independently of the microwave source coupled to the microwave guide. The microwaves from the waveguide ignite and maintain a plasma in each of the tubes. Gas flow through the tubes carries the plasmas in all the tubes into the chamber and into contact with the wafer surface.

Abstract: A microwave plasma processing apparatus comprises a vacuum processing chamber, a substrate disposed within the vacuum processing chamber, a microwave guide coupled to the vacuum processing chamber, and fins for dividing a microwave in the electric field direction. The length of fins are different such that the uniformity of the film thickness distribution on the substrate of large area can be improved.

Abstract: According to a thin film forming method, at least one type of gas is activated to produce a plurality of species having positive or negative charges. The plurality of species pass through an electric field or magnetic field to extract specific species. The specific species are supplied to a substrate surface. Thereafter, the specific species are chemically reacted with each other to form a thin film. This extraction is performed using a difference in track corresponding to a ratio of mass to charge of the species passing through the electric field.

Abstract: A plasma material gas is introduced into a plasma producing chamber, and, if necessary, a processing gas is introduced into a processing chamber communicated with the plasma producing chamber. In the plasma producing chamber, a microwave is radiated to a sintered body of metal oxide forming a plasma source, so that plasma is generated from the plasma material gas. Ions generated thereby are accelerated and introduced into the processing chamber. Predetermined processing is performed on a work directly by the ions, or is performed in a plasma generated by the ions from the processing gas.

Abstract: The present invention improves ashing speed for a treated object and ashing speed uniformity over the treated object by improving microwave transmission efficiency and by generating uniform and strong plasma in a plasma generating chamber. According to the present invention, the microwave treatment apparatus comprises expanding wave guide tubes having an expanded room of a given size on the microwave inlet side of a microwave inlet window 9 which forms a plasma generating chamber, and a partition board with a hole having an aspect ratio other than one in the room. Therewith, a microwave resonant space is formed with interposing the partition board inside the space of the expanded wave guide tube to generate a uniform and strong electric field inside the space of the expanded wave guide tube, and then the microwave is injected into the plasma generating chamber through the microwave inlet window to generate uniform and strong plasma in the plasma generating chamber.

Abstract: A plasma processing apparatus has a waveguide along which microwaves are propagated from a microwave generator to a plasma-forming region in a low-pressure processing chamber. The waveguide has a large cross-sectional area, to enable a large region of plasma to be achieved. Uniformity and stability of the plasma are improved by a mode restrictor which inhibits mixing of propagation modes which is otherwise liable to occur in a wide waveguide. The mode restrictor consists of electrically conductive dividers which divide the waveguide cross-section into an array of sub-guides before the plasma-forming region.

Abstract: A plasma processing apparatus comprises means of supplying the microwave, a reaction chamber having a microwave lead-in opening, a microwave window for introducing the microwave provided by the microwave supply means into the reaction chamber through the microwave lead-in opening, and a supporting member having beams for supporting the microwave window. The apparatus has its microwave window divided in correspondence to areas of the supporting member divided by the beams. The apparatus can have a larger microwave window which is reinforced by the beams against the pressure at plasma generation, and is capable of processing large semiconductor substrates and glass substrates for liquid crystal display panels stably and uniformly.

Abstract: A radiofrequency wave apparatus and method which provides a relatively high concentration of reactive species from a plasma for the treatment of a surface particularly of a substrate (31) with a complex geometry in a holder (62) which masks a portion of the substrate. The radiofrequency waves are preferably microwaves or UHF waves. The apparatus and method is particularly useful for rapid plasma assisted chemical vapor deposition of diamond on a portion of the substrate, particularly on surfaces of objects with complex geometries such as a drill (60) or a seal ring (64).

Abstract: A method and apparatus for efficiently depositing a dielectric film with a preselected thickness pattern, in particular, a homogeneous, uniform diamond or diamond-like film, on large area substrates through the use of opposing plasma torches and linearly superimposing of microwave modes within the reaction chamber creating and maintaining an extended linear plasma in close proximity to the substrate surfaces and utilizing laminar flow of the reactant gases in the plasma and over the surfaces. Substrate surfaces can be moved past the opposing torches permitting the coating of large area, rectangularly-shaped substrate surfaces in a simple manner. Alternatively, the plasma horn or horns can be moved across the substrate permitting coating of large area, rectangularly-shaped substrate surfaces.

Abstract: In a microwave plasma chemical vapor deposition apparatus for forming a functional deposited film on a substrate which comprises a substantially enclosed film-forming chamber comprising a circumferential wall having an end portion thereof hermetically provided with a microwave introducing window to which a waveguide extending from a microwave power source is connected, said film-forming chamber having a discharge space for causing plasma discharge of resulting in forming a deposited film on a substrate, said substrate being positioned on a substrate holder arranged in said film-forming chamber and said film-forming chamber being provided with means for supplying a film-forming raw material gas into said discharge space and means for evacuating said film-forming chamber, the improvement which comprises a dielectric sheet being movably placed on the surface of said microwave introducing window situated in said film-forming chamber in a state that said dielectric sheet is face to face contacted with said surface

Abstract: A method for generating plasma, comprising irradiating an electromagnetic wave to an energy converter capable of converting an irradiated electromagnetic wave to an electric energy and discharging said electric energy, in the presence of a rare gas in a chamber. A method for activating plasma, further comprising applying an electric cr magnetic field to said generated plasma, a process for treating a substrate, using the generated and optionally activated plasma, and apparatuses therefor are also disclosed.

Abstract: This invention relates to film-forming apparatus for forming an insulating film, for example, by the CVD method using an activated reaction gas. It is aimed at simplifying the apparatus, ensuring high film quality, enhancing the efficiency of formation of a plasma, and improving the uniformity of thickness of the produced film. The film-forming apparatus includes a plasma generator and a first gas discharger for discharging a first reaction gas into the plasma generator and a second gas discharger for discharging a second reaction gas onto a substrate. The second gas discharger includes a plurality of gas discharge pipes, in each of which a plurality of gas discharge holes are formed, whereby the second reaction gas is discharged from the gas discharge holes into contact with the activated first reaction gas and is itself activated so that a film is formed on the substrate through reaction of first and second reaction gases.

Abstract: A microwave plasma generator, wherein permanent magnets 3 forms intense magnetic field exceeding an intensity of electron cyclotron resonance magnetic field at microwave exit 6a of a dielectric body in an electron heating space chamber, the intensity of the magnetic field formed by the permanent magnet decreases rapidly to the zero at a point 14 in the vicinity of the boundary of the electronic heating space camber 1 and a plasma generating space chamber 2, and accordingly, most of electrons can be absorbed into electrons to heat and form high energy electrons at a position 12a-12c in electron cyclotron resonance layer 12.

Abstract: A showerhead includes a plurality of gas inlets for supplying process gas to a semiconductor substrate surface, and a plurality of gas outlets for removing gas and volatile byproducts produced as a result of reaction of the process gas with the substrate surface. Each gas inlet is concentrically positioned within a respective gas outlet. The showerhead improves the utilization of process gas species at the substrate surface by providing gas flow in a direction perpendicular to the substrate surface and avoiding flow of the process gas or volatile byproducts laterally across the substrate surface. The showerhead is useful for uniform stripping of a mask of organic material by direct contact of the incoming reactive gas with the substrate surface and immediate removal of the process gas and volatile byproducts through the concentrically arranged gas outlets.

Abstract: A plasma processing apparatus for processing wafers or similar objects with neutral particles produced from plasma. A microwave is introduced into the apparatus via a dielectric path, or waveguide, having a broad radiation area. The microwave, therefore, generates uniform and dense plasma over a broad area. Neutral particles are produced from the plasma by two electrodes. As a result, an object is processed at a high speed by a beam of uniformly distributed neutral particles.

Abstract: Apparatus for plasma activated chemical vapor deposition, the apparatus comprising a microwave-excited plasma reactor with a reaction enclosure (10), a microwave generator (20), a waveguide (21) providing non-resonant coupling, and insertion means (40-54) for inserting at least one flow of a predetermined gaseous mixture into the enclosure; the insertion means comprise, in order: transformation means (40-43) for transforming the state of a precursor of a material to be deposited to bring it to the gaseous state, feed means (41, 42) for feeding a vector gas suitable for being charged with the gaseous precursor to constitute the above-mentioned predetermined gaseous mixture; and injection means (18) for injecting the predetermined gaseous mixture into the enclosure (10) and comprising an externally frustoconical nozzle provided with an injection orifice situated at one end and shaped as a function of the injection orifice and of the column configuration of the plasma formed, said nozzle having means for heating

Abstract: Uniform distribution of a gas flow into a closed chamber (16) of semiconductor process equipment is enabled by using a porous sintered diffuser plate (30) having a preselected porosity and thickness as a gas diffuser. The porous diffuser plate is positioned in the equipment between the gas inlet (22) and the surface of a semiconductor wafer (18) such that the incoming gas must flow through the porous diffuser plate. In this manner, the gas is uniformly diffused through the plate due to its porous nature. As the gas exits the porous sintered plate on its bottom surface, the flow is laminar across the entire bottom surface of the porous plate. The semiconductor wafer is set a predetermined distance away from the bottom surface of the porous sintered plate where the gas supplied to its surface is uniform across the wafer surface.