Abstract: Thin film deposition apparatus, utilizing PECVD, sputtering technologies, etc., essentially constituted by a chamber equipped with one or more electrodes and respective counter-electrodes, screens, gas supply lines, and one or more magnetron sputtering cathode. The chamber is provided with a rotating device loading substrates able to rotate through 180 degrees objects to treat. The chamber can have polygonal geometry, provided to consent installation of one or more kinds of sources. The invention consents, in a single vacuum cycle the deposition of hardening and anti-reflecting layers on plastic material and it does not need frequent recharges.

Abstract: A plasma processing device is described which is modular and can be scaled up by assembly together with similar devices to provide a capability for large area processing. The device includes a housing which contains an array of RF coils and into which a process gas is fed. The article to be processed is disposed close to the housing and egress of the process gas from the housing to the process region is resisted so as to maintain a positive pressure differential between the housing and the process region.

Abstract: A microwave plasma processing apparatus is provided with a vacuum chamber, a substrate holder for mounting a substrate to be processed, a reactive gas feed port, a cleaning gas feed port, a plasma generation device for generating a processing plasma from the reactive gas and a cleaning plasma from the cleaning gas, and a high-frequency electric field application device for applying an electric field having a frequency that allows ions in the cleaning plasma to follow changes in the electric field. The high-frequency electric field application device is activated to apply the electric field to the cleaning plasma so as to remove substances that have been deposited on the surfaces of the vacuum chamber and substrate holder due to the processing of the substrate by the processing plasma, thereby cleaning up the vacuum chamber and substrate holder.

Abstract: A plasma generator for the fabrication of integrated circuit devices is described. The generator includes a separate plasma igniter electrode to apply the electrical power to a gas within a treatment chamber necessary to create a desired plasma. The plasma, once it is initiated, then is sustained by inductive coupling.

Abstract: A block of dielectric material having a long axis and a short axis and having low losses at a selected microwave frequency and a dielectric constant selected to produce a desired degree of phase modulation is mounted on a rotatable shaft in an orientation perpendicular to the long and short axes and arranged inside a waveguide feeding a CVD reactor containing a plasma species. The block is spun by a rotational force applied to the shaft at an angular acceleration such that the two axes of the block successively intersect the axis of the waveguide within the decay period of the plasma species. The frequency of phase modulation can be varied by changing the angular acceleration of the shaft, and the amplitude of the phase modulation can be varied by changing the ratio of block length to thickness and/or by selecting a material with higher dielectric constant. The incident microwave power may be modulated as a function of angular position of the spin shaft.

Abstract: Method and apparatus for depositing durable coatings onto the surface of a substrate without heating the entire substrate to high temperatures by using lasers to heat the substrate and dissociate a deposition gas. The apparatus comprises a deposition chamber for enclosing the substrate upon which a coating is to be deposited, gas delivery means for directing a flow of deposition gas on the substrate, a first laser for heating the substrate, and a second laser for irradiating the deposition gas to dissociate the gas. The method includes placing a substrate within a vacuum deposition chamber and directing a flow of deposition gas on the substrate. Then the substrate is heated with a first laser while the deposition gas is irradiated with a second laser to dissociate the deposition gas.

Abstract: A process for forming a functional deposited film which is adapted for use in an apparatus which comprises a substantially enclosed reaction chamber, a plurality of cylindrical substrates arranged to surround a discharge space and a microwave introduction means provided at least at one end of each cylindrical substrate and wherein microwave energy is introduced so that a glow discharge plasma containing reactant gases derived from starting gases is formed in the discharge space thereby forming a deposited film on each cylindrical substrate is described. The process is characterized in that a temperature control means is provided in the inside of each of said plurality of cylindrical substrates and simultaneous with the introduction of a thermally conductive gas, the thermally conductive gas is exhausted from the one end of each cylindrical substrate in the vicinity of the microwave introduction means.

Abstract: A deposit film forming apparatus is disclosed. Cylindrical substrates are disposed within a reaction vessel to be substantially sealed so as to surround a discharge space, and microwave introducing means is provided to form a microwave discharge plasma containing a reactant arising from a source gas and contributing to the formation of film, apply the voltage to an electrode provided on said discharge space, and form a deposit film on a surface of said substrate, characterized in that said microwave introducing means except for at least a microwave introducing dielectric window is constituted of two areas made of mutually different materials, a first area for transmitting the microwave is composed of a metal, and a second area in contact with the plasma is composed of a dielectric of which the product of a dielectric constant (.epsilon.) and a dielectric loss tangent (tan .delta.) at a frequency of used microwave is equal to or less than 2.times.10.sup.-2.

Abstract: A deposited film-forming apparatus comprises a reaction chamber, a supporting member provided in the reaction chamber for holding a substrate, a plasma generating chamber adjacent to the reaction chamber with interposition of a light-transmissive perforated diffusion plate wherein at least a part of the plasma generating chamber is made of a light-transmissive member, a plasma-generation means for generating plasma in the plasma generating chamber, a first gas-introduction means for introducing a gas into the reaction chamber, a second gas-introduction means for introducing another gas into the plasma generating chamber, an evacuation means for evacuating the reaction chamber and the plasma generating chamber, and a light source provided outside the plasma generating chamber for irradiating light to the substrate held on the supporting member through the plasma generating chamber and the perforated diffusion plate, wherein the perforated diffusion plate has a light-scattering diffusion face at least at the si

Abstract: Plasma deposition or etching apparatus is provided which comprises a plasma source located above and in axial relationship to a substrate process chamber. The plasma source may include a sapphire or alumina source tube for use with plasmas containing fluorine. Surrounding the plasma source are an inner magnetic coil and an outer magnetic coil arranged in the same plane perpendicular to the axis of the plasma source and the substrate process chamber. Preferably a first current is provided through the inner coil and a second current in a direction opposite to the direction of the first current is provided through the outer coil. The inner and outer coils are wrapped with a thin sheet of conducting material to shield the coils from RF signal generated by the plasma source.

Abstract: An apparatus for forming a II-VI Group compound thin film containing nitrogen as an impurity, on a substrate, comprises a container for holding a substrate, a vapor source for supplying Zn vapor on a surface of the substrate, a vapor source for supplying Se vapor on the surface of the substrate, and a discharge tube into which a nitrogen gas is introduced, having three-divided internal portions, a high-pressure portion, a middle-pressure portion, and a low-pressure portion from the gas introduction side, and supplying excitation species derived from discharge plasma generated in the low-pressure portion onto the surface of the substrate. Zn vapor and Se vapor are alternately supplied, and supply of nitrogen excitation species is performed in synchronous with supply of Zn vapor.

Abstract: Apparatus for the simultaneous plasma assisted chemical vapor deposition of thin film material onto an elongated web of substrate material at a plurality of discrete spatially separated deposition zones. In order to accomplish said simultaneous deposition, the web of substrate material is operatively positioned so as to assume a serpentine path of travel through a reduced pressure enclosure. By using an elongated linear applicator as a source of microwave energy, a high rate of uniform deposition of said thin film material over a plurality of large areas of the web of substrate material can be simultaneously achieved without heating of said web above the melting point thereof. In a preferred embodiment, the web of substrate material is formed of a low temperature, microwave transmissive synthetic plastic resin and the thin film material deposited thereupon forms a barrier coating for preventing oxygen diffusion therethrough.

Abstract: A surfatron 12 is provided which includes first waveguide 32 coupled to a section of coaxial waveguide 30 to define a cavity 28 at the intersection therebetween. The coaxial waveguide 30 includes an outer cylinder 36 and an inner cylinder 34 disposed within the outer cylinder 36. Inner cylinder 34 has an end disposed proximate to a wall of first section of waveguide 32. A space 40 is defined between the end of inner cylinder 34 and the wall of waveguide 32. A discharge tube 22 is provided having a first portion disposed within inner cylinder 34 and a second portion extending through space 40 between the end of inner cylinder 34 and the wall of waveguide 32. A coil 38 is disposed around the portion of discharge tube 22 extending through space 40 between the end of inner cylinder 34 and the wall of waveguide 32.

Abstract: An apparatus and a method for producing layers on the surfaces of workpieces, preferably on spotlight, or headlight, reflector inserts formed of plastic, includes an apparatus having a vacuum chamber that can be operated as a batch system with a PCVD coating process, where a microwave ECR plasma coating source is used, and the workpieces to be coated are secured to a rotary cage arranged in the vacuum chamber. The rotary cage can be conducted past a microwave coating source with a frequency-matched and phase-matched planetary motion. Such a coating process can be used in a vacuum chamber, under plasma, and at pressures below 2.times.10.sup.-2 mbar.

Abstract: The exterior surface of a hollow container is treated under the influence of an electric field. The electric field is applied through an electrode and an electrically conductive gas inside the container. The electrically conductive gas conducts a potential from the electrode to the inside surface of the container.

Abstract: A thin film is formed on a substrate positioned in a vacuum chamber by use of a gas jet apparatus affixed to a vacuum chamber port and having an outer nozzle with an interior cavity into which carrier gas is fed, an inner nozzle located within the outer nozzle interior cavity into which reactant gas is introduced, a tip of the inner nozzle being recessed from the vacuum chamber port within the outer nozzle interior cavity, and a microwave discharge device configured about the apparatus for generating a discharge in the carrier gas and reactant gas only in a portion of the outer nozzle interior cavity extending from approximately the inner nozzle tip towards the vacuum chamber. A supersonic free jet of carrier gas transports vapor species generated in the microwave discharge to the surface of the substrate to form a thin film on the substrate.

Abstract: A method and apparatus for depositing thin films of materials such as metals, oxides and nitrides at low temperature relies on a supersonic free jet of inert carrier gas to transport vapor species generated from an evaporation source to the surface of a substrate. Film deposition vapors are generated from solid film precursor materials, including those in the form of wires or powders. The vapor from these sources is carried downstream in a low pressure supersonic jet of inert gas to the surface of a substrate where the vapors deposit to form a thin film. A reactant gas can be introduced into the gas jet to form a reaction product with the evaporated material. The substrate can be moved from the gas jet past a gas jet containing a reactant gas in which a discharge has been generated, the speed of movement being sufficient to form a thin film which is chemically composed of the evaporated material and reactant gases.

Abstract: A neutral or plasma sound wave is launched into a plasma used within a plasma processing chamber in order to selectively control the location and concentration of plasma constituents, including (1) contaminants; (2) reactants, including ions or molecules; and/or (3) reaction products. The plasma sound wave comprises a periodic waveform controlled to include at least a second harmonic component. Oseen or Oseen-like forces associated with a neutral or plasma sound wave impart a drift velocity to contaminant particles, e.g., micron-sized dust particles, that moves such particles in a desired direction, e.g., away from a wafer or other work surface being processed by the plasma. An analogous Oseen or Oseen-like force associated with a plasma sound wave imparts a drift velocity to the reactants or reaction products in the plasma so as to move such atomic-sized reactants or products in a desired direction, e.g.

Abstract: A cold wall CVD reactor, particularly one for use in depositing TiN in a TiCl.sub.4 +NH.sub.3 reaction, is provided with a metallic liner insert in partially thermally insulated from the reactor wall which serves as one plasma electrode to form a weak secondary plasma when energized along with a second electrode near the vacuum exhaust port of the reactor. The plasma, in cooperation with radiant lamps provided to heat a wafer substrate onto which the primary CVD film is to be applied, heats the liner and a portion of the space adjacent the reactor walls and susceptor surfaces downstream of the reaction volume to cause the formation of deposits to be of the nature that can be removed by plasma cleaning without opening the reactor volume. Deposits such as TiN.sub.x Cl.sub.y and TiN form at temperatures of approximately 200.degree. C. to 650.degree. C., preferably between 300.degree. C. and 450.degree. C., rather than adduct ammonia salts of TiCl.sub.4, which would tend to form at temperatures of 200.degree. C.

Abstract: A method of processing a sample using a charged beam and reactive gases and a system employing the same, the method and system being able to perform the reactive etching and the beam assisted deposition using a charged particle detector free from the degradation of the performance due to the reactive gas. The system is designed in such a way that a shutter mechanism is provided in the form of the charged particle detector, and a chamber for accommodating the charged particle detector can be evacuated. In the observation of the sample, the charged particle detector is turned on to open the shutter mechanism, and in the processing of the sample, the charged particle detector is turned off or left as it is to shut the shutter mechanism to evacuate the inside of the charged particle detector.

Abstract: An apparatus for treating substrates, in particular for applying a protective layer to the surface of optical reflectors (17) in a microwave-generated gas-supported plasma (16), which comprises a vacuum bell jar (1, 2), which is preferably of drum-type design and has a gas inlet (6), for receiving the substrates (17) to be treated. The vacuum bell jar has a passage window (7) sealed by a quartz-glass pane (8) or the like, for the microwave energy generated by a generator (11) disposed outside the bell jar (1, 2). The microwave energy is injected into the interior of the bell jar (1, 2) by a microwave aerial (12) adjoining the window (7).

Abstract: Provided is a plasma processing apparatus and method which has a plasma generating chamber into which gas is introduced and microwaves are transmitted, thereby generating plasma. The plasma is introduced into a processing chamber, in which a semiconductor substrate to be processed resides. An RF generator and DC generator are mixed together and are synchronized with the microwaves, such that they are applied to the substrate at the same times the microwaves act upon the gas to form plasma. Thus, variance of the DC bias and RF bias can be independently controlled, and damage to the substrate is reduced. In another embodiment, an RF bias voltage modulation circuit is used to shape the RF waveform in accordance with predetermined patterns.

Abstract: In a dual plasma device, the first plasma is a microwave discharge having its own means of plasma initiation and control. The microwave discharge operates at electron cyclotron resonance (ECR), and generates a uniform plasma over a large area of about 1000 cm.sup.2 at low pressures below 0.1 mtorr. The ECR microwave plasma initiates the second plasma, a radio frequency (RF) plasma maintained between parallel plates. The ECR microwave plasma acts as a source of charged particles, supplying copious amounts of a desired charged excited species in uniform manner to the RF plasma. The parallel plate portion of the apparatus includes a magnetic filter with static magnetic field structure that aids the formation of ECR zones in the two plasma regions, and also assists in the RF plasma also operating at electron cyclotron resonance.

Abstract: A photochemical vapor phase reaction apparatus and a method of causing a photochemical vapor phase reaction are described. The apparatus comprises a vacuum chamber, a substrate holder provided in the vacuum chamber for holding a substrate to be treated by a vapor phase reaction, a gas feeding system for supplying a reactive gas to the reaction space, a light source housed in a light source room for emitting light rays through a light window, an optical system for condensing and projecting the light rays emitted from the light source onto the substrate on the holder. By this configuration, the intensity of light is relatively low at the light window and relatively high at the surface of a substrate to be treated.

Abstract: A multi-electrode plasma processing system (10) provides flexible plasma processing capabilities for semiconductor device fabrication. The plasma processing equipment (10) includes a gas showerhead assembly (52) a radio-frequency chuck (24), and screen electrode (66). The screen electrode (66) includes base (68) for positioning within process chamber (10) and is made of an insulating material such as a ceramic or teflon. A perforated screen (70) is integral to base (68) and generates a plasma from a plasma-producing gas via a radio-frequency power source (104). The screen (70) has numerous passageways (78) to allow interaction of plasma and the process chamber walls. The screen (70) surrounds showerhead assembly (52) and semiconductor wafer (22) and can influence the entire semiconductor wafer plasma processing environment (62) including the plasma density and uniformity.