Abstract: A device for manufacturing a display device includes a deposition source; a deposition thickness calculator for calculating a deposition thickness of a deposition material deposited on a substrate; and a controller for controlling a power of a heater which heats the deposition source by comparing the deposition thickness calculated with a reference thickness. The controller controls the power of the heater either at least one time for each substrate on which the thin film is to be deposited or at regular intervals while the deposition material is deposited. Influence of measurement noise that is included in a quartz crystal sensor for measuring a deposition speed may be minimized, and distribution of deposition thickness of an organic light emitting material may be reduced, thereby increasing the yield of the deposition process and producing quality display devices.

Abstract: A tool for depositing multilayer coatings onto a substrate. In one configuration, the tool includes a includes an in-line organic material deposition station operating under at least one of a pressure or temperature controlled environment. In another, it further is of a hybrid design that incorporates both in-line and cluster tool features. In this latter configuration, at least one of the deposition stations is configured to deposit an inorganic layer, while at least one other deposition station is configured to deposit an organic layer. The tool is particularly well-suited to depositing multilayer coatings onto discrete substrates, as well as to encapsulating environmentally-sensitive devices placed on the flexible substrate.

Abstract: A method for treating metal parts is provided that includes positioning a metal part within a reactor chamber, and positioning a boron containing solid form having a porosity of at least 10% by volume in the reactor chamber adjacent to the metal part. A halide containing gas may be introduced to the reactor chamber that the boron containing solid form is present in. The at least one halide containing gas and the boron containing form react to provide a gas that borides the metal part.

Abstract: The invention concerns a material evaporation chamber including a vacuum chamber (10), a first pumping unit (13) to pump said chamber and sources of material. According to the invention, a wall (23) liable to provide total or partial vacuum tightness, delineates within this chamber a first volume (25) and a second volume (22). Certain sources of material (17) having a main axis (18) are placed in the second volume (22). This second volume (22) is pumped by a second pumping unit (24). The wall (23) includes recesses (26) which are each centered on the main axis (18) of one of the sources of material (17). The evaporation chamber also comprises means (27) for plugging or clearing each of said recesses (26), said means (27) being controlled individually to protect the sources of material (17) having a main axis (18) unused.

Abstract: The present invention relates to an evaporator and a thin film deposition system including the same. The evaporator according to an exemplary embodiment of the present invention includes a container including an evaporation space, a heater configured to heat the container, an inflow part configured to spray a liquid raw material into the evaporation space, and a rotor disposed in the evaporation space, the rotor configured to evaporate the liquid raw material.

Abstract: A deposition amount measuring apparatus includes a plate-shaped body having a rotating shaft, a plurality of deposition amount sensors along side surfaces of the body, the deposition amount sensors being configured to measure an amount of deposition material, and a housing surrounding the body, the housing including an inflow port that exposes one of the deposition amount sensors.

Abstract: An apparatus for collecting condensed vapor during physical vapor deposition includes an enclosure configured to be placed adjacent to one or more vapor sources in a vacuum chamber. The enclosure includes an internal surface of the enclosure partially enclosing a volume of space configured to receive an object wherein the enclosure is maintained at a cooler temperature than the one or more vapor sources. The internal surface of the enclosure is coupled to one or more drainage gutters drainage drainage gutters.

Abstract: The invention relates to the technology for producing three-dimensional monocrystals and can preferably be used in optoelectronics for manufacturing substrates for various optoelectronic devices, including light-emitting diodes that emit light in the ultraviolet region. The method for growing an AlN monocrystal by gas-phase epitaxy from a mixture containing a source of Al and NH3 comprises arranging the Al source and a substrate, with the growth surface of said substrate turned towards said Al source, opposite one another in a growth chamber, said source and substrate forming a growth zone, producing a flow of NH3 in the growth zone; and heating the Al source and the substrate to temperatures that ensure the growth of the AlN monocrystal on the substrate. The Al source used is only free Al, the substrate is pretreated with Ga and/or In, whereupon the Al source is cooled to a temperature of 800-900° C. and the substrate is annealed by being heated to a temperature of 1300-1400° C.

Abstract: A boat according to this disclosure includes side walls and a base that are arranged to define a container with an interior. A bottom of the boat may have a convex configuration. In a specific embodiment, the base may have a convex configuration, such as the shape of a portion of the curved surface of a cylinder, with end walls located at opposite ends of the base. Such a boat may have a crescent configuration. Each boat may be configured to be positioned against another boat, enabling the assembly of groups of boats. Multi-celled structures that receive and effectively increase the surface area of precursor material are also disclosed. A multi-celled structure may be configured for use within the interior of a boat, or individually, without a separate boat.

Abstract: An organic layer deposition apparatus capable of reducing or minimizing shifting of a pattern, caused when a patterning slit sheet sags.

Abstract: A thin film deposition apparatus capable of forming a precise deposition pattern on a large substrate includes a deposition source; a first nozzle disposed at a side of the deposition source having a plurality of first slits; a second nozzle disposed opposite to the first nozzle having a plurality of second slits; and a second nozzle frame bound to the second nozzle so as to support the second nozzle. The second nozzle frame includes two first frame portions spaced apart from each other and disposed in a direction in which the plurality of second slits are arranged, and two second frame portions each connecting the two first frame portions to each other, wherein the second frame portions are curved in the direction in which the plurality of second slits are arranged, so as to form arches.

Abstract: A vapor deposition apparatus (50) includes: a mask unit (54) including a vapor deposition source (70), a vapor deposition mask (60), and a mask holding member (80); a substrate holder (52); and at least either a mask unit moving mechanism (55) or a substrate moving mechanism (53), with a roller (83) provided in a surface of one of (A) the substrate holder (52) and (B) the mask holding member (80) which faces the other one of (A) the substrate holder (52) and (B) the mask holding member (80).

Abstract: A thin film deposition apparatus to form a fine pattern on a large substrate. The thin film deposition apparatus includes a deposition source, a first nozzle that is disposed at a side of the deposition source and includes a plurality of first slits, a second nozzle that is disposed opposite to the deposition source and includes a plurality of second slits, and a second nozzle reinforcement unit that is disposed on the second nozzle and crosses the second nozzle.

Abstract: Apparatus and method for volatilizing a source reagent susceptible to particle generation or presence of particles in the corresponding source reagent vapor, in which such particle generation or presence is suppressed by structural or processing features of the vapor generation system. Such apparatus and method are applicable to liquid and solid source reagents, particularly solid source reagents such as metal halides, e.g., hafnium chloride. The source reagent in one specific implementation is constituted by a porous monolithic bulk form of the source reagent material. The apparatus and method of the invention are usefully employed to provide source reagent vapor for applications such as atomic layer deposition (ALD) and ion implantation.

Abstract: A thin film deposition apparatus can be simply applied to produce large-sized display devices on a mass scale and improves manufacturing yield. The thin film deposition apparatus for forming a thin film on a substrate includes: a deposition source that discharges a deposition material; a deposition source nozzle unit disposed at a side of the deposition source and including a plurality of deposition source nozzles arranged in a first direction; and a patterning slit sheet disposed opposite to the deposition source nozzle unit and including a plurality of patterning slits arranged in the first direction; wherein each of the patterning slits includes a plurality of sub-slits.

Abstract: A low-pressure chemical vapor deposition (LPCVD) apparatus and a thin-film deposition method thereof The apparatus comprises a reaction furnace, having reaction gas input pipelines respectively arranged at a furnace opening part and a furnace tail part. During thin film deposition, each reaction gas is synchronously introduced into the reaction furnace through the input pipeline at the furnace opening part and the input pipeline at the furnace tail part.

Abstract: The invention provides an apparatus for increasing the size of gas-entrained particles in order to render the gas-entrained particles detectable by a particle detector, the apparatus comprising an evaporation chamber (2) and a condenser (7); the apparatus is configured so that vapour-laden gas from the evaporation chamber can flow into the condenser and condensation of the vaporisable substance onto gas-entrained particles in the condenser takes place to increase the size of the particles so that they are capable of being detected by a particle detector.

Abstract: The present invention provides electrical contact assemblies can be used with vacuum deposition sources. In one exemplary application, the electrical contact assemblies of the present invention provide electrical contact to an arcuate or otherwise curved surface of a heating device used with a vacuum deposition source.

Abstract: The plasma temperature control apparatus includes a plasma generating section 40 that turns a plasma-generating gas into plasma, and a plasma-generating gas temperature control section 30 that controls the temperature of the plasma-generating gas supplied to the plasma generating section 40. The temperature of the plasma generated in the plasma generating section 40 is controlled by controlling the temperature of the plasma-generating gas.

Abstract: An object is to suppress differences in concentration between processing gases supplied to a plurality of works in a chemical solution vaporizing tank. The chemical solution vaporizing tank includes a tank body having a plurality of vaporizing chambers formed by laterally and airtightly partitioning an internal space of the tank body, a chemical solution passage located under a liquid level in each vaporizing chamber and formed at each partition member for passing the chemical solution between the vaporizing chambers, and a gas passage located above the liquid level in each vaporizing chamber and formed at the partition member to communicate the vaporizing chambers with each other for uniformizing pressures in the respective vaporizing chambers. A quantity of the channel layer in each vaporizing chamber is controlled by managing, e.g., the liquid level.

Abstract: An injector for a vacuum evaporation source includes an injection duct (1) having a longitudinal axis (11) and an inlet port (2) able to be connected to a vacuum evaporation source, and at least one nozzle (3) for diffusing a vaporized material, the nozzle (3) having a lateral face (4), and an upper face (5). The nozzle (3) includes a main channel (6) emerging outside the injection duct (1) and at least a lateral feeding channel (7) connecting the interior of the injection duct (1) to the main channel (6). The lateral feeding channel (7) has a lateral orifice (8) emerging inside the injection duct (1) through the lateral face (4) of the nozzle (3) for avoiding the clogging of the nozzle (3) by oxidized materials.

Abstract: A substrate processing apparatus includes: a reaction chamber configured to process a substrate; a vaporizer including a vaporization container into which a processing liquid including hydrogen peroxide or hydrogen peroxide and water is supplied, a processing liquid supply unit configured to supply the processing liquid to the vaporization container, and a heating unit configured to heat the vaporization container; a gas supply unit configured to supply a processing gas generated by the vaporizer into the reaction chamber; an exhaust unit configured to exhaust an atmosphere in the reaction chamber; and a control unit configured to control the heating unit and the processing liquid supply unit such that the processing liquid supply unit supplies the processing liquid to the vaporization container while the heating unit heats the vaporization container.

Abstract: Electronic devices are formed on a substrate that is advanced stepwise through a plurality of deposition vessels. Each deposition vessel includes a source of deposition material and has at least two shadow masks associated therewith. Each of the two masks is alternately positioned within the corresponding deposition vessel for patterning the deposition material onto the substrate through apertures in the mask positioned therein, and positioned in an adjacent cleaning vessel for mask cleaning. The patterning onto the substrate and the cleaning of at least one of the masks are performed concurrently.

Abstract: The disclosure discloses a single point linear evaporation source system comprising a body, an evaporator and two guiding plates. The body comprises an elongated chamber, and the surface of the body towards the substrate is provided with a plurality of nozzles communicating with the chamber for ejecting evaporating vapor towards the substrate. The evaporator comprises an opening portion communicating with the chamber. Two guiding plates are disposed inclinedly at two ends of the chamber, and the periphery of the guiding plates are in sealing connection with the body, and the distance between two ends of the two guiding plates adjacent to the substrate is larger than the distance between two ends of the two guiding plates adjacent to the evaporator. The disclosure improves the balance performance of the vapor pressure inside the chamber, and improves the uniformity of the film deposited on the substrate.

Abstract: Disclosed is an apparatus for fabricating an ingot. The apparatus includes a crucible to receive a raw material, a holder disposed at an upper portion of the crucible to fix a seed, and a filter part in the crucible. The filter part is spaced apart from a surface of the raw material.

Abstract: An evaporation source assembly used for depositing film on a substrate is provided, the evaporation source assembly comprises: a body comprising a top element, a bottom element and side walls defining a hollow chamber together, the bottom element comprises a plurality of inlet openings communicating with the chamber; a plurality of nozzles located at the top element and communicate with the chamber; a plurality of evaporators for containing and evaporating the evaporating material, which are positioned below the body and correspond to inlet openings respectively; each evaporator has an opening through which the evaporators is connected with corresponding inlet openings; and a plurality of connecting pipes for connecting the opening of the evaporators with the inlet openings, the connecting pipes are tapered pipes with a broad top and a narrow bottom to improve the vapor pressure of the evaporating material in the body to reach pressure balance.

Abstract: A linear evaporation source and a deposition apparatus having the same are disclosed. In one embodiment, the linear evaporation source includes i) a crucible being open on one side thereof and configured to store a deposition material and ii) a plurality of partitions dividing an internal space of the crucible, wherein each of the partitions has at least one opening in a lower portion thereof. The source further includes i) a nozzle section located on the open side of the crucible and comprising a plurality of nozzles, ii) a heater configured to heat the crucible and iii) a housing configured to accommodate to the crucible, the nozzle section, and the heater.

Abstract: A thin film deposition apparatus that is suitable for manufacturing large-sized display devices on a mass scale and that can be used for high-definition patterning, a method of manufacturing an organic light-emitting display device by using the thin film deposition apparatus, and an organic light-emitting display device manufactured by using the method.

Abstract: A vapor deposition device (50) in accordance with the present invention is a vapor deposition device for forming a film on a film formation substrate (60), the vapor deposition device including a vapor deposition source (80) that has an injection hole (81) from which vapor deposition particles are injected, a vapor deposition particle crucible (82) for supplying the vapor deposition particles to the vapor deposition source (80), and a rotation motor (86) for changing a distribution of the injection amount of the vapor deposition particles by rotating the vapor deposition source (80).

Abstract: A support for an optical coating liquid composition to deposit by evaporation treatment on an optical article, includes a crucible in which the optical coating liquid composition is introduced; wherein the support (30) further includes a frame (36, 37) forming an envelope in which the crucible and the optical coating liquid composition are wrapped; the frame (36, 37) having an internal space and being configured to hermetically seal the crucible and the optical coating liquid composition when the internal space has an internal pressure lower than a predetermined pressure threshold and being configured to let out vapour of the optical coating liquid composition when the internal pressure of the internal space is greater than the predetermined pressure threshold; by virtue of which the support (30) constitutes a cartridge of optical coating liquid composition.

Abstract: A chemical vapor deposition (CVD) system and method for applying an aluminide coating constituted by two or more extrinsic metal components on a jet engine component. The aluminide coating is capable of forming a protective complex oxide upon subsequent heating in an oxidizing environment. At least one of the extrinsic metals in the aluminide coating is provided as a first vapor phase reactant from a receptacle coupled by a closed communication path with the reaction chamber of the CVD system and free of a carrier gas. The aluminide coating is formed by the chemical combination of the first vapor phase reactant with a second vapor phase reactant either created in situ in the reaction chamber or supplied by a carrier gas to the reaction chamber from a precursor source.

Abstract: An optical thin-film vapor deposition apparatus and method are capable of producing an optical thin-film by vapor depositing a vapor deposition substance onto substrates (14) within a vacuum vessel (10). A dome shaped holder (12) is disposed within the vacuum vessel (10) and holds the substrates (14). A drive rotates the dome shaped holder (12). A vapor depositing source (34) is disposed oppositely to the substrates (14). An ion source (38) irradiates ions to the substrates (14). A neutralizer (40) irradiates electrons to the substrates (14). The ion source (38) is disposed at an angle between an axis, along which ions are irradiated from the ion source (38), and a line perpendicular to a surface of each of the substrates (14). The angle is between 8° inclusive and 40° inclusive. A ratio of a distance in a vertical direction between (i) a center of rotational axis of the dome shaped holder (12), and (ii) a center of the ion source (38), relative to a diameter of the dome shaped holder (12), is between 0.

Abstract: Apparatus and method for volatilizing a source reagent susceptible to particle generation or presence of particles in the corresponding source reagent vapor, in which such particle generation or presence is suppressed by structural or processing features of the vapor generation system. Such apparatus and method are applicable to liquid and solid source reagents, particularly solid source reagents such as metal halides, e.g., hafnium chloride. The source reagent in one specific implementation is constituted by a porous monolithic bulk form of the source reagent material. The apparatus and method of the invention are usefully employed to provide source reagent vapor for applications such as atomic layer deposition (ALD) and ion implantation.

Abstract: Provided is a continuous deposition apparatus wherein replacement operations of a feeding unit and a take-up unit are easily performed. The continuous deposition apparatus is provided with: a vacuum chamber (1); a deposition roller (2); evaporation sources (7L1, 7L2, 7R) which supply a deposition material to a film substrate from the side of the film substrate which is wound on the deposition roller and on which a coating is to be deposited; a feeding unit (3) which supplies the film substrate to the deposition roller (2); and a take-up unit (4) which takes up the film substrate after the coating is deposited thereon.

Abstract: An electrode fabricating apparatus for a rechargeable battery according to the present invention includes: a vacuum chamber having an inner space; and a lithium depositor receiving a lithium source and having an evaporation unit heating and evaporating the lithium source, and a nozzle unit positioned on the evaporation unit and controlling an aperture ratio to control a deposition amount of lithium.

Abstract: A sublimation grown SiC single crystal includes vanadium dopant incorporated into the SiC single crystal structure via introduction of a gaseous vanadium compound into a growth environment of the SiC single crystal during growth of the SiC single crystal.

Abstract: An apparatus for fabricating an ingot according to the embodiment comprises a crucible for receiving a raw material, wherein the raw material comprises first powder and second powders having grain sizes different from each other. A method for providing a raw material according to the embodiment comprises preparing a crucible including a central area and an edge area which surrounds the central area; filling a first powder in the central area; and filling a second powder in the edge area, the second powder having a grain size different from a grain size of the first powder.

Abstract: A method comprising introducing a workpiece support into a chamber of an apparatus. The workpiece support is for supporting thereon a plurality of workpieces. The apparatus comprising: the chamber having an interior space configured to be maintained at a pressure below atmospheric pressure; a vapor source for supplying the interior space of the chamber with a linearly extending stream of lubricant vapor; the workpiece support for supporting thereon a plurality of workpieces with surfaces facing the vapor source; and a conveyor for continuously moving the workpiece support transversely past the linearly extending stream of lubricant vapor from the vapor source. The method also comprising continuously moving the workpiece support with the plurality of workpieces supported thereon transversely past the linearly extending stream of lubricant vapor from the vapor source and depositing a uniform thickness film of the lubricant on at least one surface of each of the plurality of workpieces.

Abstract: A tool for depositing multilayer coatings onto a substrate. The tool includes a housing defining a vacuum chamber connected to a vacuum source, deposition stations each configured to deposit a layer of multilayer coating on the substrate, a curing station, and a contamination reduction device. At least one of the deposition stations is configured to deposit an inorganic layer, while at least one other deposition station is configured to deposit an organic layer. In one tool configuration, the substrate may travel back and forth through the tool as many times as needed to achieve the desired number of layers of multilayer coating. In another, the tool may include numerous housings adjacently spaced such that the substrate may make a single unidirectional pass. The contamination reduction device may be configured as one or more migration control chambers about at least one of the deposition stations, and further includes cooling devices, such as chillers, to reduce the presence of vaporous layer precursors.

Abstract: A gas lance unit configured for a reactive deposition process with a plurality of spaced apart crucibles, wherein spaces are provided between the crucibles, is described. The gas lance unit includes a gas guiding tube having one or more outlets for providing a gas for the reactive deposition process, and a condensate guiding element for guiding a condensate, particularly an aluminum condensate, to one or more positions above the spaces.

Abstract: A substrate depositing system and a method of using a substrate depositing system. A substrate depositing system includes a load-lock chamber for loading and unloading a substrate, at least one transfer chamber connected to the load-lock chamber and including a substrate transfer device configured to vertically transfer the substrate, and a pair of depositing chambers connected to opposite sides of the at least one transfer chamber and including a depositing source and a pair of substrate fixing devices, the substrate transfer device including a pair of substrate installing members.

Abstract: An apparatus and associated method for vapor deposition of a sublimated source material as a thin film on a photovoltaic (PV) module substrate includes a deposition head wherein a source material is sublimated. A distribution manifold is provided with a plurality of passages defined therethrough for passage of the sublimated source material to the substrate. A shutter plate is disposed above the distribution manifold and includes a plurality of passages therethrough that align with the passages in the distribution manifold in a first position of the shutter plate. The shutter plate is movable to a second position wherein the shutter plate blocks the passages in the distribution manifold to flow of sublimated material therethrough. A lifting mechanism is configured between the shutter plate and the distribution manifold to lift and move the shutter plate between the first and second positions without sliding the shutter plate on the distribution manifold.

Abstract: A method of forming an SiC crystal including placing in an insulated graphite container a seed crystal of SiC, and supporting the seed crystal on a shelf, wherein cushion rings contact the seed crystal on a periphery of top and bottom surfaces of the seed crystal, and where the graphite container does not contact a side surface of the seed crystal; placing a source of Si and C atoms in the insulated graphite container, where the source of Si and C atoms is for transport to the seed crystal to grow the SiC crystal; placing the graphite container in a furnace; heating the furnace; evacuating the furnace; filling the furnace with an inert gas; and maintaining the furnace to support crystal growth to thereby form the SiC crystal.

Abstract: A raw material vaporizing and supplying apparatus including a source tank in which a raw material is stored, a raw material gas supply channel through which raw material gas is supplied from an internal space portion of the source tank to a process chamber, a pressure type flow rate control system which is installed along the way of the supply channel, and controls a flow rate of the raw material gas which is supplied to the process chamber, and a constant temperature heating unit that heats the source tank, the supply channel, and the pressure type flow rate control system to a set temperature, wherein the raw material gas generated in an internal space portion of the source tank is supplied to the process chamber while the pressure type flow rate control system performs flow rate control.

Abstract: A method of forming an SiC crystal, the method including: placing a SiC seed in a growth vessel, heating the growth vessel, and evacuating the growth vessel, wherein the seed is levitated as a result of a temperature and pressure gradient, and gas flows from a growth face of the seed, around the edge of the seed, and into a volume behind the seed, which is pumped by a vacuum system.

Abstract: An apparatus for fabricating an ingot comprises an inner crucible for receiving a raw material; a seed holder placed on the raw material; and an outer crucible surrounding the inner crucible and comprising an open area in which a part of the raw material is exposed.

Abstract: Disclosed is an apparatus for fabricating an ingot. The apparatus includes a crucible receiving a raw material, and comprising an upper portion and a lower portion opposite to each other, and seed holders disposed at the upper and lower portions, respectively.

Abstract: An apparatus for fabricating an ingot includes a crucible for receiving a raw material, wherein the raw material has a shape extending in one direction.

Abstract: A point source assembly for a thin film deposition device having a chamber for holding a substrate, includes a crucible configured for holding and vaporizing a deposition material therein, where the crucible is configured for operative engagement to the chamber, an opening in the crucible configured for directing therefrom a vaporized form of the deposition material, where the opening includes a longitudinal line extending through the center of the crucible opening, and means operatively engaged to the crucible for facilitating rotational movement of the crucible for varying the orientation of the longitudinal line relative to the position of the substrate in the chamber.

Abstract: Systems and methods for depositing complex thin-film alloys on substrates are provided. In particular, systems and methods for the deposition of thin-film Cd1-xMxTe ternary alloys on substrates using a stacked-source sublimation system are provided, where M is a metal such as Mg, Zn, Mn, and Cu.