Abstract: An apparatus for coating glass articles includes a housing structure defining a chamber for receiving air or other fluid from a source of pressurized air that is in fluid communication with the chamber. The housing structure has an open end and a surface defined along at least a portion of the open end. A hot-swappable insert is removably positioned on the surface. The hot-swappable insert has a series of apertures for distributing the air or other fluid from the chamber and onto a surface of the glass articles that are positioned adjacent the insert. The insert can be replaced with another insert to adjust the flow path of the air or other fluid onto the glass articles.

Abstract: A thin film deposition apparatus including a deposition source having a crucible to contain a deposition material and a heater to heat and vaporize the deposition material; a nozzle unit disposed at a side of the deposition source along a first direction and having a plurality of nozzle slits to discharge the deposition material that was vaporized; a plurality of emission coefficient increasing units disposed toward the nozzle unit within the deposition source and increasing a quantity of motion of the deposition material that is discharged toward the nozzle unit; a patterning slit sheet disposed opposite to the nozzle unit and having a plurality of patterning slits arranged along the first direction; and a barrier plate assembly disposed between the nozzle unit and the patterning slit sheet along the first direction, and having a plurality of barrier plates that partition a space between the nozzle unit and the patterning slit sheet into a plurality of sub-deposition spaces.

Abstract: The invention relates to a deposition device for comprising a processing space with a substrate support disposed therein, as well as several lift pins (50), which can be moved into and out of the plane of the substrate support to assist in introducing a semiconductor substrate into the processing space and removing it therefrom. The device is characterized in that the contact surface (52) of the lift pin (50) that is to be brought into contact with the semiconductor substrate and/or the substrate support is provided with a material layer (54) which has a lower hardness than the semiconductor substrate and/or the substrate support. This eliminates the risk of damage being caused to the substrate and/or to the substrate support as a result of said substrate shifting undesirably upon being lifted from and lowered onto the substrate support (susceptor). Thus there is no risk of scratches being formed and of particles being released, which might adversely affect the semiconductor manufacturing process.

Abstract: A substrate temperature regulation fixed apparatus has a base substance on which a vacuumed object is placed, an adhesive layer and a base plate. The base substance is fixed on the base plate through the adhesive layer. The adhesive layer contains a substance having plasma resistance.

Abstract: When compound semiconductor layers are formed on a compound semiconductor substrate (40) by sequentially layering group III nitride semiconductor crystalline layers by metal organic chemical vapor deposition method, the compound semiconductor substrate (40) is attached inside of a reaction container with the crystal growth surface thereof facing upward, a protection member (60) having plural grooves (63) formed in a radiating manner on the side facing the crystal growth surface is attached above the compound semiconductor substrate (40), and a material gas is supplied to the inside of the reaction container through a first through hole (61) provided in the center of the protection member (60). Thereby, in the manufacture of a compound semiconductor using metal organic chemical vapor deposition method, a decrease in yield caused by adhesion of peeled-off reaction byproducts to the substrate or to the epitaxially grown film on the substrate is suppressed.

Abstract: A CVD showerhead that includes a circular inner showerhead and at least one outer ring showerhead. At least two process gas delivery tubes are coupled to each showerhead. Also, a dual showerhead that includes a circular inner showerhead and at least one outer ring showerhead where each showerhead is coupled to oxygen plus a gas mixture of lead, zirconium, and titanium organometallics. A method of depositing a CVD thin film on a wafer. Also, a method of depositing a PZT thin film on a wafer.

Abstract: A CVD showerhead that includes a circular inner showerhead and at least one outer ring showerhead. At least two process gas delivery tubes are coupled to each showerhead. Also, a dual showerhead that includes a circular inner showerhead and at least one outer ring showerhead where each showerhead is coupled to oxygen plus a gas mixture of lead, zirconium, and titanium organometallics. A method of depositing a CVD thin film on a wafer. Also, a method of depositing a PZT thin film on a wafer.

Abstract: A method and a device for infiltration of a structure made of a porous material by chemical vapor deposition. According to the method, a first face of the porous material structure is exposed to a gaseous flow, and the second face is maintained at least partially free from any contact.

Abstract: An induction heating apparatus for heating a traveling metal plate includes an induction coil for surrounding the metal plate. The induction coil includes an upper induction coil for being located above the metal plate and a lower induction coil for being located below the metal plate. The upper and lower induction coils are spaced from each other in a longitudinal direction of the metal plate a constant distance across a transverse direction of the metal plate. Each of the upper induction coil and the lower induction coil is arranged obliquely at an edge area of the metal plate so as to form an oblique angle with the transverse direction of the metal plate.

Abstract: A coating deposition apparatus includes a plurality of mounts that are adapted to mount work pieces at respective work piece locations. A crucible is located adjacent the plurality of mounts for emitting a source coating material. A plurality of gas nozzles are respectively directed at the work piece locations to scatter the emitted source coating material at surfaces of the work pieces that are otherwise difficult to coat.

Abstract: This invention provides methods that permit wafers to be loaded and unloaded in a gas-phase epitaxial growth chamber at high temperatures. Specifically, this invention provides a method for moving wafers or substrates that can bathe a substrate being moved in active gases that are optionally temperature controlled. The active gases can act to limit or prevent sublimation or decomposition of the wafer surface, and can be temperature controlled to limit or prevent thermal damage. Thereby, previously-necessary temperature ramping of growth chambers can be reduced or eliminated leading to improvement in wafer throughput and system efficiency.

Abstract: A method and apparatus for the deposition of thin films is described. In embodiments, systems and methods for epitaxial thin film formation are provided, including systems and methods for forming binary compound epitaxial thin films. Methods and systems of embodiments of the invention may be used to form direct bandgap semiconducting binary compound epitaxial thin films, such as, for example, GaN, InN and AlN, and the mixed alloys of these compounds, e.g., (In, Ga)N, (Al, Ga)N, (In, Ga, Al)N. Methods and apparatuses include a multistage deposition process and system which enables rapid repetition of sub-monolayer deposition of thin films.

Abstract: A method and apparatus for the deposition of thin films is described. In embodiments, systems and methods for epitaxial thin film formation are provided, including systems and methods for forming binary compound epitaxial thin films. Methods and systems of embodiments of the invention may be used to form direct bandgap semiconducting binary compound epitaxial thin films, such as, for example, GaN, InN and AlN, and the mixed alloys of these compounds, e.g., (In, Ga)N, (Al, Ga)N, (In, Ga, Al)N. Methods and apparatuses include a multistage deposition process and system which enables rapid repetition of sub-monolayer deposition of thin films.

Abstract: A method of processing wafers in a rotating disc CVD reactor uses wafer carrier having a unitary plate defining wafer-holding features such as pockets on its upstream surface. The carrier connects to the spindle of the reactor during processing. After processing the carrier and wafers in the reactor, the wafers are removed from the carrier. The carrier is renewed by removing the hub from the plate, cleaning the plate and then reassembling the plate with the same or a different hub.

Abstract: A solid film-formation material feeding apparatus includes a supercritical fluid supply source for supplying supercritical fluid; and a column which is connected to the supercritical fluid supply source, and has a hollow part which is filled with a filler which is inactive for the supercritical fluid, wherein the hollow part can be further filled with a solid film-formation material which is soluble in the supercritical fluid. A column assembly which includes a plurality of the columns which may be connected in parallel to each other.

Abstract: An apparatus and related process are provided for vapor deposition of a sublimated source material as a thin film on a photovoltaic (PV) module substrate. A receptacle is disposed within a vacuum head chamber and is configured for receipt of a source material. A heated distribution manifold is disposed below the receptacle and includes a plurality of passages defined therethrough. The receptacle is indirectly heated by the distribution manifold to a degree sufficient to sublimate source material within the receptacle. A molybdenum distribution plate is disposed below the distribution manifold and at a defined distance above a horizontal plane of a substrate conveyed through the apparatus. The molybdenum distribution plate includes a pattern of holes therethrough that further distribute the sublimated source material passing through the distribution manifold onto the upper surface of the underlying substrate. The molybdenum distribution plate includes greater than about 75% by weight molybdenum.

Abstract: A method for fabricating a substitute component for bone, including the processes of: provision of a chemical spray including at least three of calcium chloride, hydrogen phosphate, hydrogen carbonate and water to form a combined solution; reaction and precipitation of the combined solution onto a substrate; allowing the precipitated particles to form a porous structure on the substrate; applying substantially isostatic pressure to the porous structure to form a compressed structure; and (optional) providing one or more through-holes in the compressed structure to promote osteoinduction.

Abstract: This invention provides apparatus, protocols, and methods that permit wafers to be loaded and unloaded in a gas-phase epitaxial growth chamber at high temperatures. Specifically, this invention provides a device for moving wafers or substrates that can bath a substrate being moved in active gases that are optionally temperature controlled. The active gases can act to limit or prevent sublimation or decomposition of the wafer surface, and can be temperature controlled to limit or prevent thermal damage. Thereby, previously-necessary temperature ramping of growth chambers can be reduced or eliminated leading to improvement in wafer throughput and system efficiency.

Abstract: A wafer carrier for a rotating disc CVD reactor includes a unitary plate of a ceramic such as silicon carbide defining wafer-holding features such as pockets on its upstream surface and also includes a hub removably mounted to the plate in a central region of the plate. The hub provides a secure connection to the spindle of the reactor without imposing concentrated stresses on the ceramic plate. The hub can be removed during cleaning of the plate.

Abstract: An exhaust assembly is described for use in a plasma processing system, whereby secondary plasma is formed in the exhaust assembly between the processing space and chamber exhaust ports in order to reduce plasma leakage to a vacuum pumping system, or improve the uniformity of the processing plasma, or both. The exhaust assembly includes a powered exhaust plate in combination with a ground electrode is utilized to form the secondary plasma surrounding a peripheral edge of a substrate treated in the plasma processing system.

Abstract: A vacuum processing apparatus comprising a transfer unit disposed at a center thereof, plural processing chambers, each processing chamber having a processing table for supporting an object to be processed and carrying out processing using a gas; and amass flow controller unit interposed between two processing chambers for supplying gas to the chambers.

Abstract: A vacuum processing apparatus includes an outer chamber comprising a vacuum container, an inner chamber in which a plasma used for processing a wafer is generated, the inner chamber being detachably disposed inside of the outer chamber, a wafer holder on which the wafer is located is disposed inside of the inner chamber, and an exhausting device disposed below the wafer holder which exhausts the inside of the inner chamber. The inner chamber is sealed in air-tight manner with respect to a space between the inner chamber and the outer chamber while the space is maintained at a vacuum pressure.

Abstract: A vacuum valve assembly for use in a vacuum processing chamber includes a seat defining an opening in the vacuum valve, with the seat having a sealing face adjacent the opening and normal to the direction of the opening; and a gate having a sealing face adapted to mate with the seat sealing face, the gate being movable toward and away from the seat sealing face to seal and open the vacuum valve opening. A continuous elastomeric seal extends around the vacuum valve opening between the gate sealing face and the seat sealing face of sufficient size such that when the gate is positioned to seal the vacuum valve opening, there exists a gap between the gate sealing face and the seat sealing face. A purge gas port system, disposed in the seat or in the gate, has an inlet for a purge gas, an essentially continuous outlet extending around the vacuum valve opening and adjacent the elastomeric seal and gap, and a manifold system connecting the inlet and the outlet.

Abstract: A vacuum valve assembly for use in a vacuum processing chamber includes a seat defining an opening in the vacuum valve, with the seat having a sealing face adjacent the opening and normal to the direction of the opening; and a gate having a sealing face adapted to mate with the seat sealing face, the gate being movable toward and away from the seat sealing face to seal and open the vacuum valve opening. A continuous elastomeric seal extends around the vacuum valve opening between the gate sealing face and the seat sealing face of sufficient size such that when the gate is positioned to seal the vacuum valve opening, there exists a gap between the gate sealing face and the seat sealing face. A purge gas port system, disposed in the seat or in the gate, has an inlet for a purge gas, an essentially continuous outlet extending around the vacuum valve opening and adjacent the elastomeric seal and gap, and a manifold system connecting the inlet and the outlet.

Abstract: A susceptor configured to receive a semiconductor wafer for deposition of a layer on a front surface of the semiconductor wafer by chemical vapor deposition (CVD) has a gas-permeable structure with a porosity of at least 15%, a density of from 0.5 to 1.5 g/cm3, a pore diameter of less than 0.1 mm and an internal surface area of the pores which is greater than 10,000 cm2/cm3. Semiconductor wafers having front surface coated by chemical vapor deposition (CVD) and a polished or etched back surface, prepared using the gas-permeable susceptor, have a nanotopography of the back surface, expressed as the PV (=peak to valley) height fluctuation, of less than 5 nm, and at the same time the halo of the back surface, expressed as haze, is less than 5 ppm.

Abstract: The specification discloses a structure and method for measuring the etching speed. A test layer is connected with several resistors. Etching the metal layer disconnects in order the resistors from the circuit. The equivalent resistance of the sensing resistor system is measured to obtain the etching speed. In consideration of the errors of the resistors, the invention also provides a structure that utilizes an IC layout technique to put an interdigitized dummy resistor beside the sensing resistors. By taking the ratio of the equivalent resistance of the sensing resistors and the dummy resistor, the invention can compute to obtain the etching speed.

Abstract: A susceptor for a semiconductor wafer to be placed on during deposition of a layer on a front surface of the semiconductor wafer by chemical vapor deposition (CVD), has a gas-permeable structure with a porosity of at least 15% and a density of from 0.5 to 1.5 g/cm3. There is also a semiconductor wafer having a back surface and a front surface which has been coated by chemical vapor deposition (CVD) and a polished or etched back surface. The nanotopography of the back surface, expressed as the height fluctuation PV (=peak to valley), is less than 5 nm. There is a process for producing the semiconductor wafer.

Abstract: A substrate heater assembly for supporting a substrate of a predetermined standardized diameter during processing is provided. In one embodiment, the substrate heater assembly includes a body having an upper surface, a lower surface and an embedded heating element. A substrate support surface is formed in the upper surface of the body and defines a portion of a substrate receiving pocket. An annular wall is oriented perpendicular to the upper surface and has a length of at least one half a thickness of the substrate. The wall bounds an outer perimeter of the substrate receiving pocket and has a diameter less than about 0.5 mm greater than the predetermined substrate diameter.

Abstract: A vertical heat-processing apparatus (1) includes a vertical heat-processing furnace (2) having a furnace port (3), a lid (5) movable up and down to open and close the furnace port, and a rotation mechanism (15) disposed on the lid to rotate a holder (13) that holds a number of target substrates (W). The rotation mechanism (15) includes a rotary shaft (16), and a support unit (19) that supports the rotary shaft (16) rotatably through a bearing (17) and sealing member (18). The rotary shaft (16) has a hollow structure with a thin wall, and is supplied with a cooling gas to flow inside and outside the rotary shaft. The support unit (19) has a cooling passage (32) surrounding an upper portion of the rotary shaft (16), and is supplied with a coolant to flow through the cooling passage.

Abstract: In an optical disk substrate film-formation apparatus which prepared an optical disk by forming a thin film on a substrate, the optical disk substrate is held by a holder section. A contact support surface is provided to the holder section which closely contacts at least a portion of the surface of the optical disk substrate rear to the surface where the think film is formed.

Abstract: A substrate processing chamber has a substrate support, a gas supply, a gas exhaust, a gas energizer, and a wall about the substrate support, the wall having a porous ceramic material at least partially infiltrated with a fluorinated polymer, whereby a substrate on the substrate support may be processed by gas introduced by the gas supply, energized by the gas energizer, and exhausted by the gas exhaust.

Abstract: The invention relates to a coating process, particularly for coating a gas turbine blade (1) having cooling passageways (4) opening out onto the surface (2). During the coating operation, a fluid (6) is directed out of the cooling passageways (4) to prevent blocking of the cooling passageways (4). The invention also relates to an apparatus for implementing this coating process.

Abstract: A plasma process apparatus includes a dielectric plate to emit plasma to a chamber interior, and dielectric plate support members to support a dielectric plate. A plurality of gas introduction holes to supply reaction gas to the chamber interior are provided at the dielectric plate support members. The outlet of the gas introduction hole is open at the side facing the surface of substrate 8, and arranged at a peripheral region outer than dielectric plate 5. Ground potential is applied to a chamber lid and the dielectric plate support members, and bias voltage is applied to the substrate. Accordingly, a low-cost plasma process apparatus that can process uniformly a substrate of a large area using uniform plasma can be obtained.

Abstract: In a deposited film forming apparatus, at least part of the inner wall surfaces of a reactor or surfaces of structural component parts on which films are deposited is constituted of a porous ceramic material. This can prevent film come-off of deposited films on inner walls and structural component parts of the reactor as far as possible so that the spherical protuberances can be prevented from occurring and electrophotographic photosensitive members having a superior quality can be formed.

Abstract: In general, the present invention provides a single thermal cycling module for baking and chilling a substrate, such as a wafer, that is in thermal contact with a foil heater, a heat exchanger, and a radiation heater. The radiation heater thermally heats a fluid contained by the heat exchanger, which in turn, thermally bakes the substrate at a desired temperature. When the radiation heater is deactivated, a fluid circulates through the heat exchanger to chill the substrate. The foil heater assists the baking and chilling phases by elevating the temperature of the substrate when necessary to prevent or regulate temperature fluctuations of the substrate temperature. Both the radiation heater and the foil heater can provide several zones for varying the heat applied across the substrate, and a single fluid temperature is provided to the heat exchanger for both baking and chilling cycles.

Abstract: A semiconductor wafer comprising a single crystalline lattice suitable for use in the manufacture of integrated circuits, namely computer chips and dies, wherein a diameter of the wafer is greater than approximately 150 millimeters and wherein the wafer includes a first hole extending through the wafer. The hole is adapted to facilitate handling of the wafer without directly contacting a surface of the wafer. The wafer preferably includes a primary flat and the first hole includes a flat side having a predetermined and known orientation with respect to the primary flat of the wafer. In one embodiment, the wafer further includes a guide hole formed near the first hole such that the center-points of the first hole and the guide hole are oriented with a predetermined and known orientation with respect to the primary flat of the wafer.

Abstract: A platen supports a substrate on an interior platen region during the deposition of materials such as tungsten, metal nitrides, other metals, and silicides in a chemical vapor deposition ("CCVD") reactor. A deposition control gas composed of a suitable inert gas such as argon or a mixture of inert and reactive gases such as argon and hydrogen is introduced into the CVD reactor. Deposition control gas is preferably introduced through a restrictive opening in a gas orifice surrounding the platen interior region and exits near an edge of the substrate. The restrictive opening accommodates a uniform deposition control gas flow proximate to an edge of the substrate at a pressure greater than reactor pressure near the substrate edge. The deposition control gas substantially prevents process gas access to the substrate edge and backside. In one embodiment, the restrictive opening is formed by placing a restrictive insert within a gas groove surrounding the platen interior region.

Abstract: It is an object of the present invention to obtain a vacuum chucking which can vacuum suck a wafer even if dusts attach thereon. The main body of vacuum chuck (101) has a plurality of block grooves (125) on the surface on which the wafer (1) is sucked and fixed, in which vacuum evacuation paths (105) each for vacuum evacuating each block groove (125) are provided for each block groove (125). When the wafer(1) is sucked and fixed under low pressure, even if the degree of vacuum in one of the block grooves (125) decreases due to attachment of dusts on part of the suction surface, or the like, the wafer (1) can surely be sucked and held.

Abstract: A porous preform is densified by heating while emersed in a precursor liquid. Heating is achieved by passing a current through the preform or by an induction coil immersed in the liquid. Ways to control the densification process are also described.

Abstract: A suitable inert gas such as argon or a mixture of inert and reactive gases such as argon and hydrogen is introduced onto the backside of wafers being processed in a CVD reactor during the deposition of tungsten or other metals, metal nitrides and silicides, to avoid deposition of material on the backside of the wafers being processed. Each process station includes a gas dispersion head disposed over a platen. A vacuum chuck including a number of radial and circular vacuum grooves in the top surface of the platen is provided for holding the wafer in place. A platen heater is provided under the platen. Backside gas is heated in and about the bottom of the platen, and introduced through a circular groove in the peripheral region outside of the outermost vacuum groove of the vacuum chuck. Backside gas pressure is maintained in this peripheral region at a level greater than the CVD chamber pressure.

Abstract: A suitable inert thermal gas such as argon is introduced onto the backside of wafers being processed in a CVD reactor during the deposition of tungsten or other metals and silicides, to avoid deposition of material on the backside of the wafers being processed. Each process station includes a gas dispersion head disposed over a platen. The platen has a circular depresssion for receiving a wafer, and an annular groove provided in the floor of the depression, near the wall thereof. Heated and pressurized backside gas is introduced into the groove so that the wafer is maintained in a position above the floor of the depression but still within it. In this manner, backside gas vents from beneath the edge of the wafer on the platen and prevents the process gases from contacting the wafer in a transfer region above the platen, so that the wafer can be transported to or from the platen with a suitable wafer transfer mechanism.

Abstract: Coating apparatus for a thin plastics web comprises a coating deposition station for applying a coating to the web by vapor deposition and a support for supporting the web at the coating deposition station. The apparatus includes a device for urging gas into the region where the thin plastics web converges with the support to improve the thermal coupling between the web and the support and also to reduce the coefficient of friction between the web and support. The gas enables the coating to be applied by vapor deposition at coating speeds of up to 90 meters per minute without deformation of the thin plastics web.

Abstract: A holding device for semiconductor disks or wafers orients and secures the disk during transport to a working position. Shortly before the disk reaches a working position the device releases the surface to be worked or secures the disk position with the aid of a ring which remains in the working position. Thereby the disk surface can be worked completely or with minimal shadowing and simultaneously the transport mechanics can be effectively protected against the working process, for example coating or etching. All parts continuously exposed to the working process can be readily exchanged. If the disk remains adhered in the working station, it is torn off by a form-fitting transport securement.

Abstract: A film forming apparatus utilizing discharge to accomplish film formation is provided with a cover electrode movable back and forth and a gas supply pipe. By moving the cover electrode, the cover electrode and a substrate containing cassette in which a substrate for film formation is contained and which is conveyed to a predetermined film forming position are electrically connected, and discharge is caused in the substrate containing cassette.

Abstract: A chemical vapor deposition wafer boat for supporting a plurality of wafers in an evenly spaced, upright orientation perpendicular to the axis of the boat comprises a cylinder having closed ends and comprised of mutually engaging upper and lower hemicylinders. The upper hemicylinder has diffusion zones with gas flow passageways therein in the ends and zones within from 0 to 75 and within from 0 to 15 degrees from a vertical plane through the cylinder axis. The remainder of the hemicylinder wall and the ends are baffle areas without gas flow passageways. The ends and sidewall of the lower hemicylinder comprise gas diffusion zones. The gas flow passageways comprise from 0.5 to 80 percent of the surface area of the respective gas diffusion zones.

Abstract: The present invention relates to a plasma processing apparatus comprising a housing chamber which accommodates substances to be painted made of synthetic resin, a rotating support base which is provided in the housing chamber and rotates the substance to be painted, a plurality of hangers which are placed on the rotating support base and supports the substance to be painted, at least one plasma injection tube which is provided in the housing chamber and giving plasma processing to the surface of substance by injecting plasma gas thereto, and a variable speed drive means which rotates the rotating support base at the speed in accordance with a size and a number of substances to be painted.

Abstract: A chemical vapor deposition wafer boat for supporting a plurality of wafers in an evenly spaced, upright orientation perpendicular to the axis of the boat comprises a cylinder having closed ends and comprised of mutually engaging upper and lower hemicylinders. The upper hemicylinder has diffusion zones with gas flow passageways therein in the ends and zones within from 0 to 75 and within from 0 to 15 degrees from a vertical plane through the cylinder axis. The remainder of the hemicylinder wall and the ends are baffle areas without gas flow passageways. The ends and sidewall of the lower hemicylinder comprise gas diffusion zones. The gas flow passageways comprise from 0.5 to 80 percent of the surface area of the respective gas diffusion zones.

Abstract: Disclosed is an apparatus for forming a chemically vapor deposited coating on a porous substrate where oxygen from a first gaseous reactant containing a source of oxygen permeates through the pores of the substrate to react with a second gaseous reactant that is present on the other side of the substrate. The apparatus includes means for controlling the pressure and flow rate of each gaseous reactant, a manometer for measuring the difference in pressure between the gaseous reactants on each side of the substrate, and means for changing the difference in pressure between the gaseous reactants. Also disclosed is a method of detecting and closing cracks in the coating by reducing the pressure difference between the two gaseous reactants whenever the pressure difference falls suddenly after gradually rising, then again increasing the pressure difference on the two gases.

Abstract: Herein disclosed is a plasma treating apparatus for treating articles such as bumpers of synthetic resins with a plasma gas to activate the surfaces of said articles before the same are painted. The plasma treating apparatus comprises: a body defining a chamber for accommodating said articles; a plasma injection pipe disposed in said accommodating chamber for injecting the plasma gas onto the surfaces of said articles; a pair of rotatable supporting members juxtaposed in said accommodating chamber to each other and made rotatable on an axis; and a plurality of supporting beds supported between said rotatable supporting members for supporting said articles.

Abstract: A chemical vapor deposition wafer boat for supporting a plurality of wafers in an evenly spaced, upright orientation perpendicular to the axis of the boat comprises a cylinder having closed ends and comprised of mutually engaging upper and lower hemicylinders. The upper hemicylinder has diffusion zones with gas flow passageways therein in the ends and zones within from 0 to 75 and within from 0 to 15 degrees from a vertical plane through the cylinder axis. The remainder of the hemicylinder wall and the ends are baffle areas without gas flow passageways. The ends and sidewall of the lower hemicylinder comprise gas diffusion zones. The gas flow passageways comprise from 0.5 to 80 percent of the surface area of the respective gas diffusion zones.