Work Support Patents (Class 118/728)
  • Patent number: 11174554
    Abstract: Provided is a substrate tray which is to be used in a thin-film formation device and makes it easy to improve film quality and film thickness uniformity on a substrate by improving substrate heating efficiency and substrate heating uniformity.
    Type: Grant
    Filed: March 3, 2016
    Date of Patent: November 16, 2021
    Assignees: CORE TECHNOLOGY, INC., ASKAGI CORPORATION
    Inventors: Toshiaki Yoshimura, Hiroyuki Minowa, Lung Kei Amos Shek
  • Patent number: 11172547
    Abstract: An atomizer and an electronic cigarette are provided. The atomizer comprises an atomizing chamber and a heating assembly, the heating assembly includes heater, the heater is in the form of a sheet, the two opposite sides of the heater form air flow passages, the two opposite side walls of the heater respectively form the side walls of the air flow passages, the air flow passages are in communicate with the atomizing chamber, the number of the heater is at least one. Since the heating assembly located in the air flow passages is configured to heat the air entrance into the air flow passages, so that the air has a higher temperature when it reaches the atomizing chamber. The hot air heats the tobacco, and the contact area between the hot air and the tobacco is more uniform, and the heating can be completed quickly without waiting, generating more smoke and improving the taste.
    Type: Grant
    Filed: September 26, 2018
    Date of Patent: November 9, 2021
    Assignee: Changzhou Patent Electronic Technology Co., LTD
    Inventors: Weihua Qiu, Neng Hua
  • Patent number: 11164771
    Abstract: A wafer transferring device adapted to suck and transfer a first wafer is provided. The wafer transferring device includes an arm and a supporting carrier. The supporting carrier is connected to the arm. The supporting carrier has a single vacuum suction port exposed to an upper surface of the supporting carrier. The supporting carrier is adapted to move to a position below the first wafer. The single vacuum suction port is adapted to suck a first central region of the first wafer so as to lift up and transfer the first wafer.
    Type: Grant
    Filed: November 5, 2020
    Date of Patent: November 2, 2021
    Assignee: Powertech Technology Inc.
    Inventors: Cheng Chang, Ming Hsiu Hsieh, Yuan-Jung Lu, Chu Yuan Mo, Fu-Hsiang Chang
  • Patent number: 11145529
    Abstract: An EFEM includes first and second chambers, an airflow formation unit, a gas discharge port, and first and second nozzles. The first chamber introduces a replacement gas. The second chamber is connected with the first chamber via first and second communication sections. In the first communication section, a filter is disposed, and the replacement gas inflows from the first chamber. In the second communication section, the replacement gas outflows into the first chamber. The airflow formation unit produces a circulating airflow between the first and second chambers. The gas discharge port discharges an internal gas from the first or second chamber. The first nozzle discharges the replacement gas supplied from a replacement gas supply source into the first chamber through a first opening. The second nozzle discharges the replacement gas supplied from the source through a second opening.
    Type: Grant
    Filed: May 29, 2018
    Date of Patent: October 12, 2021
    Assignee: TDK CORPORATION
    Inventors: Tsutomu Okabe, Hiroshi Igarashi
  • Patent number: 11136665
    Abstract: Embodiments of the invention contemplate a shadow ring that provides increased or decreased and more uniform deposition on the edge of a wafer. By removing material from the top and/or bottom surfaces of the shadow ring, increased edge deposition and bevel coverage can be realized. In one embodiment, the material on the bottom surface is reduced by providing a recessed slot on the bottom surface. By increasing the amount of material of the shadow ring, the edge deposition and bevel coverage is reduced. Another approach to adjusting the deposition at the edge of the wafer includes increasing or decreasing the inner diameter of the shadow ring. The material forming the shadow ring may also be varied to change the amount of deposition at the edge of the wafer.
    Type: Grant
    Filed: January 28, 2019
    Date of Patent: October 5, 2021
    Assignee: Applied Materials, Inc.
    Inventors: Dale Du Bois, Mohamad A. Ayoub, Robert Kim, Amit Kumar Bansal, Mark Fodor, Binh Nguyen, Siu F. Cheng, Hang Yu, Chiu Chan, Ganesh Balasubramanian, Deenesh Padhi, Juan Carlos Rocha
  • Patent number: 11139194
    Abstract: A sample holder includes: a ceramic body having a circular plate shape, the ceramic body comprising an upper surface serving as a sample holding face for holding a sample; and a suction electrode disposed within the ceramic body. The upper surface of the ceramic body includes a first circumferential wall portion having an annular shape, the first circumferential wall portion being constituted so as to protrude along an outer periphery of the ceramic body, and a plurality of projections formed in a region of the upper surface inside the first circumferential wall portion. Corners lying between an upper surface and side surfaces of the first circumferential wall portion are radiused. When viewed as a cross section of the ceramic body, a radius of curvature of an outside corner is smaller than a radius of curvature of an inside corner of the radiused corners of the first circumferential wall portion.
    Type: Grant
    Filed: June 30, 2017
    Date of Patent: October 5, 2021
    Assignee: KYOCERA CORPORATION
    Inventor: Kenichi Akabane
  • Patent number: 11124894
    Abstract: A vapor phase growth apparatus according to an embodiment includes, n reactors performing a deposition process for a plurality of substrates at the same time, a first main gas supply path distributing a predetermined amount of first process gas including a group-III element to the n reactors at the same time, a second main gas supply path distributing a predetermined amount of second process gas including a group-V element to the n reactors at the same time, a controller controlling a flow rate of the first and second process gas, on the basis of control values of the flow rates of the first and second process gas supplied to the n reactors, and independently controlling predetermined process parameter independently set for each of the n reactors on the basis of control values, rotary drivers, and a heater.
    Type: Grant
    Filed: June 26, 2019
    Date of Patent: September 21, 2021
    Assignee: NuFlare Technology, Inc.
    Inventors: Yuusuke Sato, Hideshi Takahashi, Hideki Ito, Takanori Hayano
  • Patent number: 11127573
    Abstract: An embodiment includes a support unit, substrate treating apparatus and substrate treating method. The substrate treating apparatus comprises: a process chamber having a treatment space inside thereof; a support unit for supporting a substrate inside of the process chamber; and a gas supply unit for supplying the treatment gas into the treatment space, wherein the support unit comprises: an electrode layer of a metal material to which a high frequency electric power can be applied; a ground line having one end connected to the electrode layer and the other end grounded; and a switch provided on the ground line.
    Type: Grant
    Filed: February 20, 2020
    Date of Patent: September 21, 2021
    Assignee: SEMES CO., LTD.
    Inventors: Doo Ho Lim, Chang-Seung Ha, Seungbae Lee
  • Patent number: 11121320
    Abstract: Embodiments of the disclosed subject matter provide a device including a micronozzle array having separate redundant groups of depositors that each include a delivery aperture disposed between two exhaust apertures. The device may include a first row of depositors of a first redundant group, each of which may be connected in parallel to first common delivery lines and first common exhaust lines. The device may include a second row of depositors of a second redundant group, each of which is connected in parallel to second common delivery and second common exhaust lines. The first row of depositors and the second row of depositors may operate independently from one another. The device may be disposed within a deposition chamber and in proximity of a substrate.
    Type: Grant
    Filed: May 1, 2019
    Date of Patent: September 14, 2021
    Assignee: Universal Display Corporation
    Inventors: William E. Quinn, Gregory McGraw, Gregg Kottas, Xin Xu, Julia J. Brown
  • Patent number: 11114330
    Abstract: A workpiece support has a support surface where one or more standoffs are selectively removably coupled to the support surface. The one or more standoffs are operable to support a workpiece at a predetermined standoff distance from the support surface. A gap may be defined between the support surface and the workpiece. The one or more standoffs may be an electrically insulative film, such as a polyimide film that is selectively removably coupled to the support surface by an adhesive. The workpiece support may be an electrostatic chuck (ESC). Electrodes positioned below the support surface may electrostatically attract the workpiece toward the support, where a gas may be introduced in the gap.
    Type: Grant
    Filed: August 23, 2019
    Date of Patent: September 7, 2021
    Assignee: Axcelis Technologies, Inc.
    Inventors: John Baggett, Dave Shaner
  • Patent number: 11105753
    Abstract: A semiconductor equipment architecture WGT for wafer shape and flatness measurement is disclosed. The semiconductor equipment architecture WGT includes a reflective air-bearing chuck and a hybrid wafer thickness gauge. Also disclosed are the corresponding methods of measuring wafer shape and flatness using the architecture, the air-bearing chuck and the hybrid wafer thickness gauge.
    Type: Grant
    Filed: March 1, 2021
    Date of Patent: August 31, 2021
    Assignee: Nanjing LiAn Semiconductor Limited
    Inventor: An Andrew Zeng
  • Patent number: 11094574
    Abstract: According to one embodiment, a substrate supporting device is a substrate supporting device that supports a substrate in a processing container of a plasma processing apparatus, the substrate supporting device including an electrostatic chuck including a placing plate containing at least a ceramic and having the substrate electrostatically attracted by the placing plate, a lift pin configured to be storable inside the electrostatic chuck and which delivers the substrate to and from the electrostatic chuck, and a cover containing at least a ceramic of a same type as the placing plate and configured to be attachable to and detachable from the lift pin.
    Type: Grant
    Filed: January 9, 2019
    Date of Patent: August 17, 2021
    Assignee: TOSHIBA MEMORY CORPORATION
    Inventor: Hideo Eto
  • Patent number: 11081383
    Abstract: A substrate table is provided. The substrate table includes a main body configured to support a substrate thereon. The substrate table further includes a number of vacuum channels provided in the main body and respectively formed with a vacuum opening on a surface of the main body. The vacuum channels are configured to apply a vacuum to the substrate. The vacuum channels are distributed throughout the main body and arranged in a grid pattern.
    Type: Grant
    Filed: November 24, 2017
    Date of Patent: August 3, 2021
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Min-Cheng Wu, Chi-Hung Liao
  • Patent number: 11081381
    Abstract: A ceramic structure includes a ceramic base member having a main face; a hole extending from the main face into the ceramic base member; a metal electrode layer embedded in the ceramic base member; a conductive member embedded in the ceramic base member so as to be electrically connected to the metal electrode layer and form a bottom of the hole; a first metal member joined to the conductive member by a brazing material and having an average linear expansion coefficient not less than the average linear expansion coefficient of the conductive member; one or a plurality of second metal members having a greater average linear expansion coefficient than the first metal member; and a metal terminal joined to the one or the plurality of second metal members and having a greater average linear expansion coefficient than each second metal member.
    Type: Grant
    Filed: April 2, 2019
    Date of Patent: August 3, 2021
    Assignee: NGK SPARK PLUG CO., LTD.
    Inventor: Atsushi Tsuchida
  • Patent number: 11075098
    Abstract: A reticle pressing unit and an EUV reticle pod using the same are provided. An inner assembly includes an upper cover and a lower cover. The lower cover includes a supporting element for supporting the reticle. A pressing unit for pressing the reticle is disposed on the upper cover and includes a pressing element and a limiting cap. The pressing element has oppositely arranged pressing part and pressure receiving part. The pressing part extends through the upper cover to press against the reticle. The pressing element is covered by the limiting cap and is protruded outwardly from a top surface of the limiting cap. An outer cover has a pushing surface for forming a surface-to-surface contact with the pressure receiving part and for simultaneously pressing against the pressure receiving part and the top surface to solve the problems relating to the reticle which is applied with uneven forces.
    Type: Grant
    Filed: February 24, 2020
    Date of Patent: July 27, 2021
    Assignee: GUDENG PRECISION INDUSTRIAL CO., LTD
    Inventors: Ming-Chien Chiu, Chia-Ho Chuang, Hsin-Min Hsueh
  • Patent number: 11053157
    Abstract: This invention provides a manufacturing method for an optical fiber. In this invention, when the core layer loose body and the cladding layer loose body are deposited, the oxyhydrogen flame is used make a temperature of an interface between the core layer and the cladding layer rise, such that silicon dioxide at the interface appropriately contracts to form an isolation layer with a relatively high density. In addition, in this invention, a hollow glass tube is used as a target rod, and the hollow glass tube which is the target rod is directly connected with the core layer loose body. During the subsequent dehydration, not only a dehydration atmosphere penetrates from the outside to the inside of the cladding layer loose body, but also the dehydration atmosphere directly enters the core layer through the hollow glass tube.
    Type: Grant
    Filed: August 23, 2017
    Date of Patent: July 6, 2021
    Assignee: CHENGDU FUTONG OPTICAL COMMUNICATION TECHNOLOGIES CO., LTD
    Inventors: Haibin Chen, Jian Chen, Qiang Chen, Qingguo Li, Xiaosong Jian
  • Patent number: 11053586
    Abstract: A CVD reactor includes a flat component with two broad sides extending parallel to each other and spaced apart from each other by a thickness. An outer edge of each broad side transitions without kinks into an edge of an outer peripheral side of the flat component. The thickness of the flat component is substantially less than a diameter of the flat component. The flat component includes a core body composed of graphite. The core body is coated with a SiC or TaC coating, which exhibits a compressive stress at room temperature. In order to reduce the stress between the coating and the core body, the rounding arc length of the outer edge is greater than 90° and the rounding radius of the outer edge is at most 1 mm and/or is greater than the coating thickness. Additionally, rounding segments of the peripheral side transition into each other without kinks.
    Type: Grant
    Filed: June 25, 2015
    Date of Patent: July 6, 2021
    Assignee: AIXTRON SE
    Inventors: Marcel Kollberg, Daniel Brien
  • Patent number: 11049701
    Abstract: Apparatus and methods for reducing and eliminating accumulation of excessive charged particles from substrate processing systems are provided herein. In some embodiments a process kit for a substrate process chamber includes: a cover ring having a body and a lip extending radially inward from the body, wherein the body has a bottom, a first wall, and a second wall, and wherein a first channel is formed between the second wall and the lip; a grounded shield having a lower inwardly extending ledge that terminates in an upwardly extending portion configured to interface with the first channel of the cover ring; and a bias power receiver coupled to the body and extending through an opening in the grounded shield.
    Type: Grant
    Filed: November 27, 2017
    Date of Patent: June 29, 2021
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Adolph Miller Allen, William Johanson, Viachslav Babayan, Zhong Qiang Hua, Carl R. Johnson, Vanessa Faune, Jingjing Liu, Vaibhav Soni, Kirankumar Savandaiah, Sundarapandian Ramalinga Vijayalaks Reddy
  • Patent number: 11049746
    Abstract: A substrate cassette for housing several substrates stacked on top of each other, in particular wafers, has a housing that comprises a first side and a second side that is parallel to the first side, wherein at least an elongated first support is provided for a substrate within the housing between the sides, said support being spaced apart at least in sections from the first side, wherein the first side is closest to said at least one first support.
    Type: Grant
    Filed: December 5, 2019
    Date of Patent: June 29, 2021
    Inventor: Bernhard Bogner
  • Patent number: 11049761
    Abstract: A shutter disk suitable for shield a substrate support in a physical vapor deposition chamber is provided. In one embodiment, the shutter disk includes a disk-shaped body having an outer diameter disposed between a top surface and a bottom surface. The disk-shape body includes a double step connecting the bottom surface to the outer diameter.
    Type: Grant
    Filed: November 4, 2019
    Date of Patent: June 29, 2021
    Assignee: Applied Materials, Inc.
    Inventors: Karl M. Brown, Jason M. Schaller
  • Patent number: 10975495
    Abstract: An epitaxial growth apparatus that can provide an improved thickness uniformity of an epitaxial film is provided. An epitaxial growth apparatus in accordance with the present disclosure includes a susceptor and a preheat ring surrounding a side of the susceptor having a gap interposed therebetween. A width of the gap at least in part between the susceptor and the preheat ring is set to be longer than a width w1 of the gap between the susceptor and the preheat ring in the vicinity of the reactant gas inlet.
    Type: Grant
    Filed: March 1, 2018
    Date of Patent: April 13, 2021
    Assignee: SUMCO CORPORATION
    Inventor: Haku Komori
  • Patent number: 10971390
    Abstract: The present disclosure generally relates to substrate supports for semiconductor processing. In one embodiment, a substrate support is provided. The substrate support includes a body comprising a substrate chucking surface, an electrode disposed within the body, a plurality of substrate supporting features formed on the substrate chucking surface, wherein the number of substrate supporting features increases radially from a center of the substrate chucking surface to an edge of the substrate chucking surface, and a seasoning layer formed on the plurality of the substrate supporting features, the seasoning layer comprising a silicon nitride.
    Type: Grant
    Filed: June 11, 2019
    Date of Patent: April 6, 2021
    Assignee: Applied Materials, Inc.
    Inventors: Abdul Aziz Khaja, Liangfa Hu, Sudha S. Rathi, Ganesh Balasubramanian
  • Patent number: 10964577
    Abstract: According to one embodiment, an electrostatic chuck includes a ceramic dielectric substrate having a first major surface placing an object to be processed and a second major surface on an opposite side of the first major surface, and a base plate provided on a side of the second major surface and supporting the ceramic dielectric substrate. The base plate includes a first communicating passage passing a medium which adjusts a temperature of the object to be processed. The first communicating passage has an upper surface, a side surface, and a lower surface. A ratio of variation of a maximum height Sz in the upper surface to a height of the first communicating passage is not more than 1%.
    Type: Grant
    Filed: September 14, 2018
    Date of Patent: March 30, 2021
    Assignee: Toto Ltd.
    Inventors: Kosuke Yamaguchi, Yuichi Yoshii, Hitoshi Sasaki, Kengo Maehata
  • Patent number: 10961638
    Abstract: Semiconductor wafers are coated with an epitaxially deposited layer in an epitaxy reactor, wherein at least one semiconductor wafer is arranged on a respective susceptor in the epitaxy reactor and a first deposition gas for coating the at least one semiconductor wafer is conducted through the epitaxy reactor, wherein an etching process in which a first etching gas and a carrier gas are conducted through the epitaxy reactor is carried out before the coating process, and wherein a cleaning process in which a second etching gas and subsequently in particular a second deposition gas are conducted through the epitaxy reactor after a predefinable number of coating processes, wherein for two or more etching processes preceding the respective coating process at least one variable which influences the etching process is set individually. Semiconductor wafers processed thereby have distinctly uniform topology.
    Type: Grant
    Filed: December 9, 2016
    Date of Patent: March 30, 2021
    Assignee: SILTRONIC AG
    Inventors: Christian Hager, Katharina May, Christof Weber
  • Patent number: 10964584
    Abstract: A process kit ring adaptor includes a rigid carrier. The rigid carrier includes an upper surface and a lower surface. The upper surface includes a first distal portion and a second distal portion to support a process kit ring. The lower surface includes a first region to interface with an end effector configured to support wafers and a solid planar central region to interface with a vacuum chuck.
    Type: Grant
    Filed: May 20, 2019
    Date of Patent: March 30, 2021
    Assignee: Applied Materials, Inc.
    Inventors: Leon Volfovski, Andreas Schmid, Denis Martin Koosau, Nicholas Michael Kopec, Steven Babayan, Douglas R. McAllister, Helder Lee, Jeffrey Hudgens, Damon K. Cox
  • Patent number: 10943768
    Abstract: Embodiments described herein include an applicator frame for a processing chamber. In an embodiment, the applicator frame comprises a first major surface of the applicator frame and a second major surface of the applicator frame opposite the first major surface. In an embodiment, the applicator frame further comprises a through hole, wherein the through hole extends entirely through the applicator frame. In an embodiment, the applicator frame also comprises a lateral channel embedded in the applicator frame. In an embodiment the lateral channel intersects the through hole.
    Type: Grant
    Filed: April 20, 2018
    Date of Patent: March 9, 2021
    Assignee: Applied Materials, Inc.
    Inventors: Hanh Nguyen, Thai Cheng Chua, Philip Allan Kraus
  • Patent number: 10932323
    Abstract: A reactor for chemical vapor deposition is equipped with an IR radiation compensating susceptor assembly that supports one or more semiconductor substrates above linear IR heater lamps arranged in a parallel array. A set of primary IR radiation reflectors beneath the lamps directs IR radiation back toward the susceptor in a pattern selected to provide uniform IR irradiation of the susceptor assembly to thereby uniformly heat the substrates. Secondary IR shield reflectors may be provided in selected patterns on the underside of the susceptor assembly as a fine tuning measure to direct IR radiation away from the assembly in a controlled pattern. The combined IR radiation reflectors have an IR signature that compensates for any non-uniform heating profile created by the linear IR heater lamp array. The heating profile of the lamp array might also be tailored in order to reduce the amount of compensation required to be supplied by the IR reflectors.
    Type: Grant
    Filed: August 3, 2015
    Date of Patent: February 23, 2021
    Assignee: ALTA DEVICES, INC.
    Inventors: Brian Burrows, Abril Cabreros, David M. Ishikawa, Brian Brown, Alexander Lerner
  • Patent number: 10923385
    Abstract: A carrier plate for receiving a wafer includes a pocket defined in a middle section on a top surface of the carrier plate and has a surface diameter. The pocket defines a substrate support region. A retaining feature of the carrier plate is defined at an outer edge of the pocket. A tapered portion of the carrier plate extends from the retaining feature to an outer diameter. The tapered portion is configured to receive a focus ring. A bottom surface of the carrier plate is configured to sit over a pedestal that is used in a process chamber. A plurality of wafer supports is disposed on a top surface of the substrate support region to support the wafer, when received.
    Type: Grant
    Filed: November 3, 2016
    Date of Patent: February 16, 2021
    Assignee: Lam Research Corporation
    Inventor: Karl Leeser
  • Patent number: 10923384
    Abstract: An apparatus for transferring a substrate includes a hand on which the substrate is placed, and the hand includes an outer support member that supports a first region of the substrate and has a pair of outer fingers, an inner support member that supports a second region of the substrate that is closer to the center of the substrate than the first region, the inner support member having a pair of inner fingers located inward of the pair of outer fingers, and a central recess formed in a region between the pair of inner fingers of the inner support member, the region corresponding to the center of the substrate placed on the hand and the central recess being open toward a front side.
    Type: Grant
    Filed: September 23, 2019
    Date of Patent: February 16, 2021
    Assignee: SEMES CO., LTD.
    Inventors: Tae Kyung Kong, Ki Won Han, Min Je Lee
  • Patent number: 10898955
    Abstract: A substrate holder for a lithographic apparatus has a main body having a thin-film stack provided on a surface thereof. The thin-film stack forms an electronic or electric component such as an electrode, a sensor, a heater, a transistor or a logic device, and has a top isolation layer. A plurality of burs to support a substrate are formed on the thin-film stack or in apertures of the thin-film stack.
    Type: Grant
    Filed: March 29, 2019
    Date of Patent: January 26, 2021
    Assignee: ASME NETHERLANDS B.V.
    Inventors: Raymond Wilhelmus Louis Lafarre, Sjoerd Nicolaas Lambertus Donders, Nicolaas Ten Kate, Nina Vladimirovna Dziomkina, Yogesh Pramod Karade, Elisabeth Corinne Rodenburg
  • Patent number: 10854491
    Abstract: A method and apparatus for of improving processing results in a processing chamber by orienting a substrate support relative to a surface within the processing chamber. The method comprising orienting a supporting surface of a substrate support in a first orientation relative to an output surface of a showerhead, where the first orientation of the supporting surface relative to the output surface is not coplanar, and depositing a first layer of material on a substrate disposed on the supporting surface that is oriented in the first orientation.
    Type: Grant
    Filed: March 18, 2019
    Date of Patent: December 1, 2020
    Assignee: Applied Materials, Inc.
    Inventors: Jason M. Schaller, Michael Rohrer, Tuan Anh Nguyen, William Tyler Weaver, Gregory John Freeman, Robert Brent Vopat
  • Patent number: 10840069
    Abstract: A plasma processing apparatus includes a mounting table, a power supply unit and a power supply control unit. The mounting table has therein a coil provided along a mounting surface on which a focus ring is mounted. The power supply unit is configured to apply a high frequency voltage to the coil. The power supply control unit is configured to control the power supply unit to increase a power of the high frequency voltage applied to the coil in accordance with consumption of the focus ring.
    Type: Grant
    Filed: June 5, 2018
    Date of Patent: November 17, 2020
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Yasuhiro Tobe, Jun Hirose
  • Patent number: 10832936
    Abstract: A substrate support for a substrate processing system is provided and includes a body and mesas. The mesas are distributed across and extending from and in a direction away from the body. The mesas are configured to support a substrate. Each of the mesas includes a surface area that contacts and supports the substrate. Areal density of the mesas monotonically increases as a radial distance from a center of the substrate support increases.
    Type: Grant
    Filed: July 27, 2016
    Date of Patent: November 10, 2020
    Assignee: LAM RESEARCH CORPORATION
    Inventors: Peter Woytowitz, Vincent Burkhart, Michael Rumer, Karl Leeser
  • Patent number: 10811287
    Abstract: A spin coater includes a rotatable chuck structure configured to hold a substrate, a bowl enclosing the substrate and guiding a flow of a fluid around the substrate to a bottom of the bowl, and a flow controller detachably coupled to the bowl such that the flow controller is arranged between the bowl and an edge of the substrate and separates the flow into a linear flow and a non-linear flow.
    Type: Grant
    Filed: September 12, 2018
    Date of Patent: October 20, 2020
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Hyun-Joo Jeon, Sung-Hyup Kim
  • Patent number: 10804081
    Abstract: An edge ring configured to surround an outer periphery of a substrate support in a plasma processing chamber wherein plasma is generated and used to process a substrate is disclosed, the substrate support comprising a base plate, a top plate, an elastomer seal assembly between the base plate and the top plate, and an elastomer seal configured to surround the elastomer seal assembly. The edge ring includes an upper inner surface having an edge step directed towards an interior portion of the edge ring and arranged to extend from an outer periphery of a top surface of the top plate to an outer periphery of an upper surface of the base plate, a lower inner surface, an outer surface, a lower surface extending from the lower inner surface to the outer surface, and a top surface extending from the outer surface to the upper inner surface.
    Type: Grant
    Filed: December 20, 2013
    Date of Patent: October 13, 2020
    Assignee: LAM RESEARCH CORPORATION
    Inventors: Ambarish Chhatre, David Schaefer, Keith Gaff
  • Patent number: 10804079
    Abstract: An active showerhead used for a plasma reactor is described. The active showerhead includes a plurality of substrate layers. The substrate layers include at least one actuator and transfer component. The actuator and transfer component is coupled to a gas line via a gas channel. The active showerhead further includes an electrode layer located below the substrate layers. The electrode layer and the actuator and transfer component both share an opening. The actuator and transfer component allows passage of one or more process gases received from the gas line and the gas channel into the opening without the need for a conventional gas box.
    Type: Grant
    Filed: August 19, 2019
    Date of Patent: October 13, 2020
    Assignee: Lam Research Corporation
    Inventors: Mariusch Gregor, Thorsten Lill, David Trussell
  • Patent number: 10796889
    Abstract: A processing apparatus includes a chamber main body; a stage having therein a first passage for coolant and a space communicating with the first passage; a first pipeline having a first end portion inserted into the space to be connected to the first passage and a second end portion connected to a coolant supply mechanism; and a first sealing member provided at a gap between a wall surface confining the space and the first end portion. A second passage having one end and the other end is formed within the stage. The one end of the second passage is connected to the gap. The first sealing member is contacted with the wall surface at a side of the first passage with respect to the second passage. The processing apparatus comprises a second pipeline connected to the other end thereof; and a detecting device connected to the second pipeline.
    Type: Grant
    Filed: July 18, 2018
    Date of Patent: October 6, 2020
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Akira Ishikawa, Atsushi Matsuura, Akiyoshi Mitsumori, Shin Yamaguchi
  • Patent number: 10790123
    Abstract: Process kits, processing chambers, and methods for processing a substrate are provided. The process kit includes an edge ring, a sliding ring, an adjustable tuning ring, and an actuating mechanism. The edge ring has a first ring component interfaced with a second ring component that is movable relative to the first ring component forming a gap therebetween. The sliding ring is positioned beneath the edge ring. The adjustable tuning ring is positioned beneath the sliding ring. The actuating mechanism is interfaced with the lower surface of the adjustable tuning ring and configured to actuate the adjustable tuning ring such that the gap between the first and second ring components is varied. In one or more examples, the sliding ring includes a matrix and a coating, the matrix contains an electrically conductive material and the coating contains an electrically insulting material.
    Type: Grant
    Filed: September 14, 2018
    Date of Patent: September 29, 2020
    Assignee: Applied Materials, Inc.
    Inventor: Yogananda Sarode Vishwanath
  • Patent number: 10781533
    Abstract: Embodiments of the present disclosure provide a processing chamber with a top, a bottom, and a sidewall coupled together to define a volume, a gas distributor disposed around the sidewall, a substrate support disposed in the enclosure, the substrate support having a central exhaust opening having a channel and a rotary actuator disposed along a longitudinal axis thereof, and a plurality of substrate pockets distributed around the central exhaust opening, and an energy source coupled to the bottom.
    Type: Grant
    Filed: June 3, 2016
    Date of Patent: September 22, 2020
    Assignee: APPLIED MATERIALS, INC.
    Inventor: Mehmet Tugrul Samir
  • Patent number: 10784142
    Abstract: A lift pin system and a lift pin assembly are disclosed. In one or more approaches, a lift pin system includes a wafer support, such as an electrostatic chuck or a platen, and a lift pin assembly coupled to the wafer support. The lift pin assembly may include a plurality of pins. Each of the plurality of pins may include a tip extending through a housing, a spring within the housing, wherein the spring biases against the tip, and a support arm coupled to the housing. In some approaches, the housing is threadably coupled with the support arm to allow access to the tip of each pin above a top surface of the wafer support for easy replacement. The replaceable pin tips further permit easier customization of pin tip geometries, materials, spring force, etc., depending on specific process and/or wafer characteristics.
    Type: Grant
    Filed: March 28, 2018
    Date of Patent: September 22, 2020
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Stacia Marcelynas, Riordan Cayabyab, Jonathan D. Fischer
  • Patent number: 10770338
    Abstract: One illustrative system disclosed herein includes a process chamber positioned within a processing tool and a wafer chuck that is adapted to be positioned at a wafer processing position located within the process chamber and at a chuck wafer transfer position located outside of the process chamber.
    Type: Grant
    Filed: December 19, 2018
    Date of Patent: September 8, 2020
    Assignee: GLOBALFOUNDRIES Inc.
    Inventors: Wieland Pethe, Dirk Noack
  • Patent number: 10763086
    Abstract: Apparatus for plasma processing of semiconductor substrates. Aspects of the apparatus include an upper shield with a gas diffuser arranged at a center of the upper shield. The gas diffuser and upper shield admit a process gas to a processing chamber in a laminar manner. A profile of the upper shield promotes radial expansion of the process gas and radial travel of materials etched from a surface of the substrates. Curvatures of the upper shield direct the etched materials to a lower shield with reduced depositing of etched materials on the upper shield. The lower shield also includes curved surfaces that direct the etched materials toward slots that enable the etched materials to exit from the process chamber with reduced depositing on the lower shield.
    Type: Grant
    Filed: January 8, 2018
    Date of Patent: September 1, 2020
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Bonnie T. Chia, Cheng-hsiung Tsai
  • Patent number: 10748806
    Abstract: A apparatus includes a susceptor and a non-reactive gas source. The susceptor has through holes and a wafer support surface. Each through hole includes a lift pin and a lift pin head. The lift pin has a vertical degree of motion in the through hole to lift up or place a wafer on the susceptor. The lift pin head has at least one flow channel structure running from its first surface at least partially exposed to a bottom side of the susceptor through its second surface exposed to a top side of the susceptor wherein the lift pin. The non-reactive gas source is configured to flow a gas to a backside of the wafer through the flow channel structure through the bottom side of the susceptor.
    Type: Grant
    Filed: December 21, 2018
    Date of Patent: August 18, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Yen-Yu Chen, Wei-Jen Chen, Yi-Chen Chiang, Tsang-Yang Liu, Chang-Sheng Lee, Wei-Chen Liao, Wei Zhang
  • Patent number: 10714370
    Abstract: A mounting table includes a base and an electrostatic chuck provided on the base. The base has first and second top surface on which the electrostatic chuck and a focus ring are respectively provided. The second top surface is provided below the first top surface. A coolant path in the base has central and peripheral paths extending below the first and second top surfaces, respectively. The peripheral path has a portion extending along a side surface toward the first top surface. The mounting surface has central and peripheral regions. The mounting surface has protrusions formed in a dot shape. The protrusions are formed such that a contact area between the protrusions of the peripheral region and the backside of an object per unit area becomes greater than a contact area between the protrusions of the central region and the backside of the object per unit area.
    Type: Grant
    Filed: February 27, 2014
    Date of Patent: July 14, 2020
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Taketoshi Tomioka, Taku Gohira, Toshiyuki Makabe
  • Patent number: 10692765
    Abstract: Methods of and apparatuses for dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. In an example, a plasma etch apparatus includes a plasma etch chamber. The plasma etch chamber includes a plasma source disposed in an upper region of the plasma etch chamber, a cathode assembly disposed below the plasma source, and a support pedestal for supporting a substrate carrier below the plasma source. The plasma etch apparatus also includes a transfer chamber coupled to the plasma etch chamber. The transfer chamber includes a transfer arm for supporting a substantial portion of a dicing tape of the substrate carrier, the transfer arm configured to transfer a sample from the support pedestal following an etch singulation process.
    Type: Grant
    Filed: November 7, 2014
    Date of Patent: June 23, 2020
    Assignee: Applied Materials, Inc.
    Inventors: James M. Holden, Alexander N. Lerner, Ajay Kumar, Brad Eaton, Aparna Iyer
  • Patent number: 10676817
    Abstract: Device for processing a substrate are described herein. An apparatus for controlling deposition on a substrate can include a chamber comprising a shadow frame support, a substrate support comprising a substrate supporting surface, a shadow frame with a shadow frame body including a first support surface, a second support surface opposite the first surface, and a detachable lip connected with the shadow frame body. The detachable lip can include a support connection, a first lip surface facing the substrate, a second lip surface opposite the first lip surface, a first edge positioned over the first support surface, and a second edge opposite the first edge to contact the substrate.
    Type: Grant
    Filed: August 7, 2012
    Date of Patent: June 9, 2020
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Qunhua Wang, Soo Young Choi, Robin L. Tiner, John M. White, Gaku Furuta, Beom Soo Park
  • Patent number: 10607816
    Abstract: Embodiments of showerheads having a detachable gas distribution plate are provided herein. In some embodiments, a showerhead for use in a semiconductor processing chamber may include a body having a first side and a second side opposing the first side; a gas distribution plate disposed proximate the second side of the body, wherein the gas distribution plate is formed from a material having an electrical resistivity between about 60 ohm-cm to 90 ohm-cm; a clamp disposed about a peripheral edge of the gas distribution plate to removably couple the gas distribution plate to the body; and a thermal gasket disposed in a gap between the body and gas distribution plate.
    Type: Grant
    Filed: March 1, 2018
    Date of Patent: March 31, 2020
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Jason Della Rosa, Hamid Noorbakhsh, Vladimir Knyazik, Jisoo Kim, Wonseok Lee, Usama Dadu
  • Patent number: 10600617
    Abstract: A plasma processing apparatus includes: a vacuum chamber in which plasma is formed; an inner chamber detachable from the vacuum chamber; a sample stage disposed in the inner chamber; a sample stage ring base disposed in the inner chamber; and a suspension beam coupled to the sample stage ring base in a space between the vacuum chamber and the inner chamber. With the inside of the vacuum chamber hermetically sealed, the inner chamber is placed on the sample stage ring base, and the inside is hermetically sealed. The upper part of the suspension beam is vertically movably held to a sample stage base plate configuring the upper part of the vacuum chamber to cover the inside. The plasma processing apparatus includes a conductive connector sandwiched between the suspension beam made of SUS and the upper part of the member and the sample stage base plate.
    Type: Grant
    Filed: September 12, 2019
    Date of Patent: March 24, 2020
    Assignee: HITACHI HIGH-TECHNOLOGIES CORPORATION
    Inventors: Masakazu Isozaki, Takahisa Hashimoto
  • Patent number: 10590563
    Abstract: A method of fabricating a plurality of single crystal CVD diamonds, the method comprising: coating a carrier substrate with a layer of polycrystalline CVD diamond material; bonding a plurality of single crystal diamond substrates to the layer of polycrystalline CVD diamond material on the carrier substrate; growing single crystal CVD diamond material on the plurality of single crystal diamond substrates to form a plurality of single crystal CVD diamonds; and separating the plurality of single crystal CVD diamonds from the layer of polycrystalline CVD diamond material on the carrier substrate and any polycrystalline CVD diamond material which has grown between the plurality of single crystal CVD diamonds to yield a plurality of individual single crystal CVD diamonds.
    Type: Grant
    Filed: September 14, 2016
    Date of Patent: March 17, 2020
    Assignee: Element Six Technologies Limited
    Inventors: Christopher John Howard Wort, Daniel James Twitchen, John Lloyd Collins
  • Patent number: 10553454
    Abstract: An apparatus for the wafer level packaging (WLP) of micro-bolometer vacuum package assemblies (VPAs), in one embodiment, includes a wafer alignment and bonding chamber, a bolometer wafer chuck and a lid wafer chuck disposed within the chamber in vertically facing opposition to each other, means for creating a first ultra-high vacuum (UHV) environment within the chamber, means for heating and cooling the bolometer wafer chuck and the lid wafer chuck independently of each other, means for moving the lid wafer chuck in the vertical direction and relative to the bolometer wafer chuck, means for moving the bolometer wafer chuck translationally in two orthogonal directions in a horizontal plane and rotationally about a vertical axis normal to the horizontal plane, and means for aligning a fiducial on a bolometer wafer held by the bolometer wafer chuck with a fiducial on a lid wafer held by the lid wafer chuck.
    Type: Grant
    Filed: August 21, 2017
    Date of Patent: February 4, 2020
    Assignee: FLIR Systems, Inc.
    Inventors: Paul Schweikert, Andrew Sharpe, Gregory A. Carlson, Alex Matson, Scott Vilander, Bob Zahuta, Richard M. Goeden