Work Support Patents (Class 118/728)
  • Patent number: 10811287
    Abstract: A spin coater includes a rotatable chuck structure configured to hold a substrate, a bowl enclosing the substrate and guiding a flow of a fluid around the substrate to a bottom of the bowl, and a flow controller detachably coupled to the bowl such that the flow controller is arranged between the bowl and an edge of the substrate and separates the flow into a linear flow and a non-linear flow.
    Type: Grant
    Filed: September 12, 2018
    Date of Patent: October 20, 2020
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Hyun-Joo Jeon, Sung-Hyup Kim
  • Patent number: 10804079
    Abstract: An active showerhead used for a plasma reactor is described. The active showerhead includes a plurality of substrate layers. The substrate layers include at least one actuator and transfer component. The actuator and transfer component is coupled to a gas line via a gas channel. The active showerhead further includes an electrode layer located below the substrate layers. The electrode layer and the actuator and transfer component both share an opening. The actuator and transfer component allows passage of one or more process gases received from the gas line and the gas channel into the opening without the need for a conventional gas box.
    Type: Grant
    Filed: August 19, 2019
    Date of Patent: October 13, 2020
    Assignee: Lam Research Corporation
    Inventors: Mariusch Gregor, Thorsten Lill, David Trussell
  • Patent number: 10804081
    Abstract: An edge ring configured to surround an outer periphery of a substrate support in a plasma processing chamber wherein plasma is generated and used to process a substrate is disclosed, the substrate support comprising a base plate, a top plate, an elastomer seal assembly between the base plate and the top plate, and an elastomer seal configured to surround the elastomer seal assembly. The edge ring includes an upper inner surface having an edge step directed towards an interior portion of the edge ring and arranged to extend from an outer periphery of a top surface of the top plate to an outer periphery of an upper surface of the base plate, a lower inner surface, an outer surface, a lower surface extending from the lower inner surface to the outer surface, and a top surface extending from the outer surface to the upper inner surface.
    Type: Grant
    Filed: December 20, 2013
    Date of Patent: October 13, 2020
    Assignee: LAM RESEARCH CORPORATION
    Inventors: Ambarish Chhatre, David Schaefer, Keith Gaff
  • Patent number: 10796889
    Abstract: A processing apparatus includes a chamber main body; a stage having therein a first passage for coolant and a space communicating with the first passage; a first pipeline having a first end portion inserted into the space to be connected to the first passage and a second end portion connected to a coolant supply mechanism; and a first sealing member provided at a gap between a wall surface confining the space and the first end portion. A second passage having one end and the other end is formed within the stage. The one end of the second passage is connected to the gap. The first sealing member is contacted with the wall surface at a side of the first passage with respect to the second passage. The processing apparatus comprises a second pipeline connected to the other end thereof; and a detecting device connected to the second pipeline.
    Type: Grant
    Filed: July 18, 2018
    Date of Patent: October 6, 2020
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Akira Ishikawa, Atsushi Matsuura, Akiyoshi Mitsumori, Shin Yamaguchi
  • Patent number: 10790123
    Abstract: Process kits, processing chambers, and methods for processing a substrate are provided. The process kit includes an edge ring, a sliding ring, an adjustable tuning ring, and an actuating mechanism. The edge ring has a first ring component interfaced with a second ring component that is movable relative to the first ring component forming a gap therebetween. The sliding ring is positioned beneath the edge ring. The adjustable tuning ring is positioned beneath the sliding ring. The actuating mechanism is interfaced with the lower surface of the adjustable tuning ring and configured to actuate the adjustable tuning ring such that the gap between the first and second ring components is varied. In one or more examples, the sliding ring includes a matrix and a coating, the matrix contains an electrically conductive material and the coating contains an electrically insulting material.
    Type: Grant
    Filed: September 14, 2018
    Date of Patent: September 29, 2020
    Assignee: Applied Materials, Inc.
    Inventor: Yogananda Sarode Vishwanath
  • Patent number: 10781533
    Abstract: Embodiments of the present disclosure provide a processing chamber with a top, a bottom, and a sidewall coupled together to define a volume, a gas distributor disposed around the sidewall, a substrate support disposed in the enclosure, the substrate support having a central exhaust opening having a channel and a rotary actuator disposed along a longitudinal axis thereof, and a plurality of substrate pockets distributed around the central exhaust opening, and an energy source coupled to the bottom.
    Type: Grant
    Filed: June 3, 2016
    Date of Patent: September 22, 2020
    Assignee: APPLIED MATERIALS, INC.
    Inventor: Mehmet Tugrul Samir
  • Patent number: 10784142
    Abstract: A lift pin system and a lift pin assembly are disclosed. In one or more approaches, a lift pin system includes a wafer support, such as an electrostatic chuck or a platen, and a lift pin assembly coupled to the wafer support. The lift pin assembly may include a plurality of pins. Each of the plurality of pins may include a tip extending through a housing, a spring within the housing, wherein the spring biases against the tip, and a support arm coupled to the housing. In some approaches, the housing is threadably coupled with the support arm to allow access to the tip of each pin above a top surface of the wafer support for easy replacement. The replaceable pin tips further permit easier customization of pin tip geometries, materials, spring force, etc., depending on specific process and/or wafer characteristics.
    Type: Grant
    Filed: March 28, 2018
    Date of Patent: September 22, 2020
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Stacia Marcelynas, Riordan Cayabyab, Jonathan D. Fischer
  • Patent number: 10770338
    Abstract: One illustrative system disclosed herein includes a process chamber positioned within a processing tool and a wafer chuck that is adapted to be positioned at a wafer processing position located within the process chamber and at a chuck wafer transfer position located outside of the process chamber.
    Type: Grant
    Filed: December 19, 2018
    Date of Patent: September 8, 2020
    Assignee: GLOBALFOUNDRIES Inc.
    Inventors: Wieland Pethe, Dirk Noack
  • Patent number: 10763086
    Abstract: Apparatus for plasma processing of semiconductor substrates. Aspects of the apparatus include an upper shield with a gas diffuser arranged at a center of the upper shield. The gas diffuser and upper shield admit a process gas to a processing chamber in a laminar manner. A profile of the upper shield promotes radial expansion of the process gas and radial travel of materials etched from a surface of the substrates. Curvatures of the upper shield direct the etched materials to a lower shield with reduced depositing of etched materials on the upper shield. The lower shield also includes curved surfaces that direct the etched materials toward slots that enable the etched materials to exit from the process chamber with reduced depositing on the lower shield.
    Type: Grant
    Filed: January 8, 2018
    Date of Patent: September 1, 2020
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Bonnie T. Chia, Cheng-hsiung Tsai
  • Patent number: 10748806
    Abstract: A apparatus includes a susceptor and a non-reactive gas source. The susceptor has through holes and a wafer support surface. Each through hole includes a lift pin and a lift pin head. The lift pin has a vertical degree of motion in the through hole to lift up or place a wafer on the susceptor. The lift pin head has at least one flow channel structure running from its first surface at least partially exposed to a bottom side of the susceptor through its second surface exposed to a top side of the susceptor wherein the lift pin. The non-reactive gas source is configured to flow a gas to a backside of the wafer through the flow channel structure through the bottom side of the susceptor.
    Type: Grant
    Filed: December 21, 2018
    Date of Patent: August 18, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Yen-Yu Chen, Wei-Jen Chen, Yi-Chen Chiang, Tsang-Yang Liu, Chang-Sheng Lee, Wei-Chen Liao, Wei Zhang
  • Patent number: 10714370
    Abstract: A mounting table includes a base and an electrostatic chuck provided on the base. The base has first and second top surface on which the electrostatic chuck and a focus ring are respectively provided. The second top surface is provided below the first top surface. A coolant path in the base has central and peripheral paths extending below the first and second top surfaces, respectively. The peripheral path has a portion extending along a side surface toward the first top surface. The mounting surface has central and peripheral regions. The mounting surface has protrusions formed in a dot shape. The protrusions are formed such that a contact area between the protrusions of the peripheral region and the backside of an object per unit area becomes greater than a contact area between the protrusions of the central region and the backside of the object per unit area.
    Type: Grant
    Filed: February 27, 2014
    Date of Patent: July 14, 2020
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Taketoshi Tomioka, Taku Gohira, Toshiyuki Makabe
  • Patent number: 10692765
    Abstract: Methods of and apparatuses for dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. In an example, a plasma etch apparatus includes a plasma etch chamber. The plasma etch chamber includes a plasma source disposed in an upper region of the plasma etch chamber, a cathode assembly disposed below the plasma source, and a support pedestal for supporting a substrate carrier below the plasma source. The plasma etch apparatus also includes a transfer chamber coupled to the plasma etch chamber. The transfer chamber includes a transfer arm for supporting a substantial portion of a dicing tape of the substrate carrier, the transfer arm configured to transfer a sample from the support pedestal following an etch singulation process.
    Type: Grant
    Filed: November 7, 2014
    Date of Patent: June 23, 2020
    Assignee: Applied Materials, Inc.
    Inventors: James M. Holden, Alexander N. Lerner, Ajay Kumar, Brad Eaton, Aparna Iyer
  • Patent number: 10676817
    Abstract: Device for processing a substrate are described herein. An apparatus for controlling deposition on a substrate can include a chamber comprising a shadow frame support, a substrate support comprising a substrate supporting surface, a shadow frame with a shadow frame body including a first support surface, a second support surface opposite the first surface, and a detachable lip connected with the shadow frame body. The detachable lip can include a support connection, a first lip surface facing the substrate, a second lip surface opposite the first lip surface, a first edge positioned over the first support surface, and a second edge opposite the first edge to contact the substrate.
    Type: Grant
    Filed: August 7, 2012
    Date of Patent: June 9, 2020
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Qunhua Wang, Soo Young Choi, Robin L. Tiner, John M. White, Gaku Furuta, Beom Soo Park
  • Patent number: 10607816
    Abstract: Embodiments of showerheads having a detachable gas distribution plate are provided herein. In some embodiments, a showerhead for use in a semiconductor processing chamber may include a body having a first side and a second side opposing the first side; a gas distribution plate disposed proximate the second side of the body, wherein the gas distribution plate is formed from a material having an electrical resistivity between about 60 ohm-cm to 90 ohm-cm; a clamp disposed about a peripheral edge of the gas distribution plate to removably couple the gas distribution plate to the body; and a thermal gasket disposed in a gap between the body and gas distribution plate.
    Type: Grant
    Filed: March 1, 2018
    Date of Patent: March 31, 2020
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Jason Della Rosa, Hamid Noorbakhsh, Vladimir Knyazik, Jisoo Kim, Wonseok Lee, Usama Dadu
  • Patent number: 10600617
    Abstract: A plasma processing apparatus includes: a vacuum chamber in which plasma is formed; an inner chamber detachable from the vacuum chamber; a sample stage disposed in the inner chamber; a sample stage ring base disposed in the inner chamber; and a suspension beam coupled to the sample stage ring base in a space between the vacuum chamber and the inner chamber. With the inside of the vacuum chamber hermetically sealed, the inner chamber is placed on the sample stage ring base, and the inside is hermetically sealed. The upper part of the suspension beam is vertically movably held to a sample stage base plate configuring the upper part of the vacuum chamber to cover the inside. The plasma processing apparatus includes a conductive connector sandwiched between the suspension beam made of SUS and the upper part of the member and the sample stage base plate.
    Type: Grant
    Filed: September 12, 2019
    Date of Patent: March 24, 2020
    Assignee: HITACHI HIGH-TECHNOLOGIES CORPORATION
    Inventors: Masakazu Isozaki, Takahisa Hashimoto
  • Patent number: 10590563
    Abstract: A method of fabricating a plurality of single crystal CVD diamonds, the method comprising: coating a carrier substrate with a layer of polycrystalline CVD diamond material; bonding a plurality of single crystal diamond substrates to the layer of polycrystalline CVD diamond material on the carrier substrate; growing single crystal CVD diamond material on the plurality of single crystal diamond substrates to form a plurality of single crystal CVD diamonds; and separating the plurality of single crystal CVD diamonds from the layer of polycrystalline CVD diamond material on the carrier substrate and any polycrystalline CVD diamond material which has grown between the plurality of single crystal CVD diamonds to yield a plurality of individual single crystal CVD diamonds.
    Type: Grant
    Filed: September 14, 2016
    Date of Patent: March 17, 2020
    Assignee: Element Six Technologies Limited
    Inventors: Christopher John Howard Wort, Daniel James Twitchen, John Lloyd Collins
  • Patent number: 10553454
    Abstract: An apparatus for the wafer level packaging (WLP) of micro-bolometer vacuum package assemblies (VPAs), in one embodiment, includes a wafer alignment and bonding chamber, a bolometer wafer chuck and a lid wafer chuck disposed within the chamber in vertically facing opposition to each other, means for creating a first ultra-high vacuum (UHV) environment within the chamber, means for heating and cooling the bolometer wafer chuck and the lid wafer chuck independently of each other, means for moving the lid wafer chuck in the vertical direction and relative to the bolometer wafer chuck, means for moving the bolometer wafer chuck translationally in two orthogonal directions in a horizontal plane and rotationally about a vertical axis normal to the horizontal plane, and means for aligning a fiducial on a bolometer wafer held by the bolometer wafer chuck with a fiducial on a lid wafer held by the lid wafer chuck.
    Type: Grant
    Filed: August 21, 2017
    Date of Patent: February 4, 2020
    Assignee: FLIR Systems, Inc.
    Inventors: Paul Schweikert, Andrew Sharpe, Gregory A. Carlson, Alex Matson, Scott Vilander, Bob Zahuta, Richard M. Goeden
  • Patent number: 10533252
    Abstract: A showerhead is configured to be mounted inside a processing chamber and provide a processing gas onto a semiconductor wafer inside the processing chamber. The showerhead includes a supply plenum, a faceplate, and an electrode plate assembly. The faceplate is disposed at a side of the supply plenum. The electrode plate assembly is disposed between a gas source and the supply plenum. The electrode plate assembly includes a first plate having a unitary construction and having a plurality of first gas holes, and a second plate having a unitary construction and having a plurality of second gas holes. The second plate is located between the first plate and the supply plenum and separated from the first plate. The plurality of second gas holes are partially overlapped but misaligned with the plurality of first gas holes. A semiconductor apparatus having the same and a semiconductor process are also provided.
    Type: Grant
    Filed: March 31, 2016
    Date of Patent: January 14, 2020
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Chih-Chiang Chiu, Ding-I Liu, Chin-Feng Lin, Po-Hsiung Leu
  • Patent number: 10515843
    Abstract: The present disclosure generally relates to generally relates to equipment for performing semiconductor device fabrication, and more particularly, to a cover ring for partially covering a surface of a substrate support in high-density plasma chemical vapor deposition processing. In one embodiment, the cover ring may include an annular body, an inner support block with a beveled first edge for stability, one or more thermal breaks to increase thermal movement towards the outer diameter, a rounded shoulder to prevent particle deposition, an outer lip configured to a substrate support pedestal, a vertical appendage to support the substrate, and a thermally conductive coating disposed on the annular ring to direct thermal conductivity towards the outer edge of the ring and prevent particle accumulation.
    Type: Grant
    Filed: December 7, 2016
    Date of Patent: December 24, 2019
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Govinda Raj, Hanish Kumar Panavalappil Kumarankutty, Stanley Wu
  • Patent number: 10501848
    Abstract: A deposition unit for a thin film deposition system includes one or more of deposition heads and a gas manifold. Each deposition head includes an output face having a plurality of gas openings, a mounting face including a plurality of deposition head gas ports, and connecting gas passages. The gas manifold includes an attachment face having one or more interface regions, each interface region including a plurality of manifold gas ports in positions corresponding to the deposition head gas ports. Each deposition head is fastened to the gas manifold in an interface region with sealing elements positioned between the manifold gas ports and the deposition head gas ports. The mounting face of each deposition head and the attachment face of the gas manifold include alignment features for aligning each deposition head with the interface region of the gas manifold.
    Type: Grant
    Filed: March 14, 2017
    Date of Patent: December 10, 2019
    Assignee: EASTMAN KODAK COMPANY
    Inventors: Todd Mathew Spath, Lee William Tutt
  • Patent number: 10500616
    Abstract: An apparatus includes: a sprinkler configured for spraying liquid; a conduit with a nano-particle coated surface; a sensor associated with the conduit, wherein the sensor is configured to detect a signal corresponding to a film deposition on the nano-particle coated surface; and a controller coupled with the sensor and the sprinkler, wherein the controller is configured to regulate liquid spraying of the sprinkler over the nano-particle coated surface.
    Type: Grant
    Filed: April 26, 2017
    Date of Patent: December 10, 2019
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
    Inventors: Li-Hsing Chien, Yung-Ti Hung, Rouh Jier Wang, Yu-Te Chang
  • Patent number: 10490437
    Abstract: A disc-shaped susceptor includes a plurality of recesses that are aligned in a circumferential direction on an upper surface of the susceptor and in which wafers are respectively mounted, in which the susceptor is formed so that a center of the susceptor is concave toward a lower surface thereof from an outer edge thereof.
    Type: Grant
    Filed: April 1, 2016
    Date of Patent: November 26, 2019
    Assignee: SUMCO CORPORATION
    Inventors: Daisuke Hieda, Hisashi Uchino, Tatsuo Kusumoto
  • Patent number: 10480873
    Abstract: A flow path member 1 according to one aspect of the invention includes a main body 4 formed of a ceramic sintered body in which a first flow path 6 is provided so as to allow a fluid to flow therethrough, wherein the main body 4 includes a projection 10 formed of part of the ceramic sintered body on an inner wall of the first flow path 6.
    Type: Grant
    Filed: May 21, 2013
    Date of Patent: November 19, 2019
    Assignee: KYOCERA CORPORATION
    Inventors: Kou Ito, Kouji Teramoto, Hiroyasu Momikura
  • Patent number: 10453733
    Abstract: In one embodiment, a substrate support assembly includes a susceptor for supporting a substrate, and a supporting transfer mechanism coupled to the susceptor, the supporting transfer mechanism having a surface for supporting a peripheral edge of the substrate, the supporting transfer mechanism being movable relative to an upper surface of the susceptor.
    Type: Grant
    Filed: February 26, 2018
    Date of Patent: October 22, 2019
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Masato Ishii, Mehmet Tugrul Samir, Shu-Kwan Lau, Jeffrey Tobin
  • Patent number: 10446419
    Abstract: A semiconductor manufacturing apparatus according to the present embodiment includes a first cooler, a second cooler, and a temperature controller. The first cooler includes a first placing portion that can place a central portion of a semiconductor substrate thereon, and cools the central portion by heat exchange with the first placing portion. The second cooler includes a second placing portion that can place a peripheral portion of the semiconductor substrate thereon in a periphery of the first placing portion, and cools the peripheral portion. The temperature controller controls a temperature of the second placing portion to be lower than a temperature of the semiconductor substrate and to be higher than a temperature of the first placing portion.
    Type: Grant
    Filed: September 14, 2016
    Date of Patent: October 15, 2019
    Assignee: Toshiba Memory Corporation
    Inventor: Tatsumi Usami
  • Patent number: 10435811
    Abstract: An IC fabrication system for facilitating improved thermal uniformity includes a chamber within which an IC process is performed on a substrate, a heating mechanism configured to heat the substrate, and a substrate-retaining device configured to retain the substrate in the chamber. The substrate-retaining device includes a contact surface configured to contact an edge of the retained substrate without the substrate-retaining device contacting a circumferential surface of the retained substrate. The substrate-retaining device includes a plurality of contact regions and a plurality of noncontact regions disposed at a perimeter, where the plurality of noncontact regions is interspersed with the plurality of contact regions. Each of the plurality of noncontact regions includes the contact surface.
    Type: Grant
    Filed: December 12, 2016
    Date of Patent: October 8, 2019
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD
    Inventors: Yi-Hung Lin, Jr-Hung Li, Chang-Shen Lu, Tze-Liang Lee, Chii-Horng Li
  • Patent number: 10418270
    Abstract: A wafer edge lift pin of an apparatus for manufacturing a semiconductor device is described. The wafer edge lift pin includes an offset top section containing a notch portion to support and laterally confine the wafer. The notch portion horizontally sweeps away from the wafer along a radius so that rotation adjusts lateral confinement of the wafer. A base section below the top section has a diameter greater than a diameter of the top section across the notch portion to help strengthen the pin and to allow perpendicular mounting. A bottom section has a diameter that is smaller than the diameter of the base section and provides a boss feature to mount the lift pin. The apparatus includes a process chamber where the wafer is processed, a chuck assembly on which the wafer is loaded. At least three wafer edge lift pins move the wafer up and down.
    Type: Grant
    Filed: December 7, 2017
    Date of Patent: September 17, 2019
    Assignee: TEL FSI, INC.
    Inventors: Edward D. Hanzlik, Sean Moore, Brian D. Hansen
  • Patent number: 10403476
    Abstract: An active showerhead used for a plasma reactor is described. The active showerhead includes a plurality of substrate layers. The substrate layers include at least one actuator and transfer component. The actuator and transfer component is coupled to a gas line via a gas channel. The active showerhead further includes an electrode layer located below the substrate layers. The electrode layer and the actuator and transfer component both share an opening. The actuator and transfer component allows passage of one or more process gases received from the gas line and the gas channel into the opening without the need for a conventional gas box.
    Type: Grant
    Filed: November 9, 2016
    Date of Patent: September 3, 2019
    Assignee: Lam Research Corporation
    Inventors: Mariusch Gregor, Thorsten Lill, David Trussell
  • Patent number: 10392723
    Abstract: A reaction chamber of a reactor for epitaxial growth includes a wall (1) with a recess and a susceptor (7) comprising a body and a relief. The body is placed in said recess in a rotational manner with respect to said wall (1). The chamber includes a discoid supporting element (8), having a shape adapted to be laid stably on said relief, having a size such to protrude radially from said relief and adapted to support one or more substrates to be subjected to epitaxial growth. The chamber also includes a flat covering (91, 92) located over said wall (1) and a hole (10) at said discoid supporting element (8). The shape of said hole (10) corresponds to the shape of said discoid supporting element (8). The covering (92) has at least one hollow guide (11, 12) for the passage of a device (16) for loading/unloading said discoid supporting element (8), wherein said hollow guide (11, 12) extends from an edge of said covering (92) to said hole (10).
    Type: Grant
    Filed: December 17, 2014
    Date of Patent: August 27, 2019
    Assignee: LPE S.P.A.
    Inventors: Francesco Corea, Danilo Crippa, Laura Gobbo, Marco Mauceri, Vincenzo Ogliari, Franco Preti, Marco Puglisi, Carmelo Vecchio
  • Patent number: 10395969
    Abstract: Embodiments herein include a halo having varied conductance. In some embodiments, a halo surrounding a semiconductor workpiece may include a first side opposite a second side, and a first end opposite a second end, wherein the first side is operable to receive an ion beam from an ion source. The halo may further include a plurality of apertures extending between the first side and the second side, wherein the plurality of apertures permit passage of a portion of the ion beam to pass therethrough, and wherein the halo has a varied conductance between the first and second ends. In some embodiments, at least a group of apertures of the plurality of apertures vary in at least one of: pitch, and diameter. In some embodiments, a thickness of the halo between the first side and the second side varies along a height extending between the first end and the second end.
    Type: Grant
    Filed: November 3, 2017
    Date of Patent: August 27, 2019
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Costel Biloiu, Ernest Allen, Frank Sinclair
  • Patent number: 10392291
    Abstract: A method for forming an optical fiber preform is provided. The method includes inserting a glass core cane into a glass sleeve such that the glass sleeve surrounds a portion of the glass core cane and such that there is a gap between the glass sleeve and the portion of the glass core cane surrounded by the glass sleeve. The method further includes depositing silica soot onto at least a portion of the glass core cane and at least a portion of the glass sleeve to form a silica soot preform, and flowing gas through the gap during processing of the silica soot preform.
    Type: Grant
    Filed: December 16, 2015
    Date of Patent: August 27, 2019
    Assignee: CORNING INCORPORATED
    Inventors: Raymond D. Groh, Ming-Jun Li, Alper Ozturk, Chunfeng Zhou
  • Patent number: 10388558
    Abstract: A plasma processing apparatus includes an electrostatic chuck and a lifter pin. The electrostatic chuck has a mounting surface on which a target object is mounted and a back surface opposite to the mounting surface, and a through hole formed through the mounting surface and the back surface. The lifter pin is at least partially formed of an insulating member and has a leading end accommodated in the through hole. The lifter pin vertically moves with respect to the mounting surface to vertically transfer the target object. A conductive material is provided at at least one of a leading end portion of the lifter pin which corresponds to the through hole and a wall surface of the through hole which faces the lifter pin.
    Type: Grant
    Filed: December 1, 2017
    Date of Patent: August 20, 2019
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Yasuharu Sasaki, Akira Ishikawa, Ryo Chiba
  • Patent number: 10385455
    Abstract: A film forming apparatus configured to form a film on part of a work. The film forming apparatus comprises a film forming vessel comprising a first mold located above the work and a second mold located below the work to be opposed to the first mold. The first mold is configured to include a first recessed portion that is recessed upward viewed from a film formation target part of the work and a first planar portion arranged around the first recessed portion. The second mold is configured to include a second planar portion in a place opposed to the first planar portion. The film forming apparatus also comprises a first seal member located between the first planar portion and the work. The first seal member is configured to come into contact with the first planar portion and the work when the work is away from the first planar portion. The film forming apparatus further comprises a second seal member located between the second planar portion and the work.
    Type: Grant
    Filed: April 19, 2017
    Date of Patent: August 20, 2019
    Assignee: Toyota Jidosha Kabushiki Kaisha
    Inventor: Kazutaka Iizuka
  • Patent number: 10332832
    Abstract: A method of manufacturing a multi-layer electronics package includes attaching a base insulating substrate to a frame having an opening therein and such that the frame is positioned above and/or below the base insulating substrate to provide support thereto. A first conductive wiring layer is applied on the first side of the base insulating substrate, and vias are formed in the base insulating substrate. A second conductive wiring layer is formed on the second side of the base insulating substrate that covers the vias and the exposed portions of the first conductive wiring layer and at least one additional insulating substrate is bonded to the base insulating substrate. Vias are formed in each additional insulating substrate and an additional conductive wiring layer is formed on each of the additional insulating substrate. The described build-up forms a multilayer interconnect structure, with the frame providing support for this build-up.
    Type: Grant
    Filed: August 7, 2017
    Date of Patent: June 25, 2019
    Assignee: General Electric Company
    Inventors: Christopher James Kapusta, Raymond Albert Fillion, Risto Ilkka Sakari Tuominen, Kaustubh Ravindra Nagarkar
  • Patent number: 10316412
    Abstract: A wafer carrier for use in a system for growing epitaxial layers on one or more wafers by chemical vapor deposition. The wafer carrier includes wafer retention pockets recessed in its body. Each pocket includes a floor surface and a peripheral wall surface surrounding the floor surface and defining a periphery of that pocket. Each pocket has a center situated along a corresponding wafer carrier radial axis. In each of the pockets, a set of bumpers is positioned primarily at a distal portion of the wafer retention pocket opposite the central axis so as to maintain a gap of at least a predefined size between the peripheral wall surface at the distal portion and an edge of a wafer to be placed in the wafer retention pocket.
    Type: Grant
    Filed: April 18, 2012
    Date of Patent: June 11, 2019
    Assignee: Veeco Instruments Inc.
    Inventors: Sandeep Krishnan, Jeffrey Scott Montgomery, Lukas Urban, Alexander I. Gurary, Yuliy Rashkovsky
  • Patent number: 10295063
    Abstract: A sealing ring for attaching to a cover ring of a wafer treating device has an annular carrier and a sealing lip which is releasably attached to the carrier.
    Type: Grant
    Filed: March 9, 2016
    Date of Patent: May 21, 2019
    Assignee: SUSS MICROTEC LITHOGRAPHY GMBH
    Inventors: Dieter Albert, Michael Braun
  • Patent number: 10297425
    Abstract: A method and apparatus for plasma enhanced chemical vapor deposition to an interior region of a hollow, tubular, high aspect ratio workpiece are disclosed. A plurality of anodes are disposed in axially spaced apart arrangement, to the interior of the workpiece. A process gas is introduced into the region. A respective individualized DC or pulsed DC bias is applied to each of the anodes. The bias excites the process gas into a plasma. The workpiece is biased in a hollow cathode arrangement. Pressure is controlled in the interior region to maintain the plasma. An elongated support tube arranges the anodes, and receives a process gas tube. A current splitter provides a respective selected proportion of a total current to each anode. One or more notch diffusers or chamber diffusers may diffuse the process gas or a plasma moderating gas. Plasma impedance and distribution may be controlled using various means.
    Type: Grant
    Filed: April 17, 2014
    Date of Patent: May 21, 2019
    Assignee: SUB-ONE TECHNOLOGY, LLC.
    Inventors: Deepak Upadhyaya, Karthik Boinapally, William J. Boardman, Matthew MaMoody, Thomas B. Casserly, Pankaj Jyoti Hazarika, Duc Doan
  • Patent number: 10269614
    Abstract: Implementations of the present disclosure generally relate to a susceptor for thermal processing of semiconductor substrates. In one implementation, the susceptor includes a first rim surrounding and coupled to an inner region, and a second rim disposed between the inner rim and the first rim. The second rim includes an angled support surface having a plurality of cut-outs formed therein, and the angled support surface is inclined with respect to a top surface of the inner region.
    Type: Grant
    Filed: October 16, 2015
    Date of Patent: April 23, 2019
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Schubert S. Chu, Kartik Shah, Anhthu Ngo, Karthik Ramanathan, Nitin Pathak, Nyi O. Myo, Paul Brillhart, Richard O. Collins, Kevin Joseph Bautista, Edric Tong, Zhepeng Cong, Anzhong Chang, Kin Pong Lo, Manish Hemkar
  • Patent number: 10265868
    Abstract: Embodiments of the present invention provide a transfer robot having a cooling plate attached thereto for cooling a substrate during transfer between a processing chamber and a load lock chamber. In one embodiment, the cooling plate is a single, large area cooling plate attached to the transfer robot beneath the substrate being transferred. In another embodiment, the cooling plate is an array of substrates attached to the transfer robot beneath the substrate being transferred. The cooling plate may include a conduit path for circulating a cooling fluid throughout the cooling plate. The cooling plate may have an upper surface with a high emissivity coating applied thereto.
    Type: Grant
    Filed: January 14, 2011
    Date of Patent: April 23, 2019
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Shinichi Kurita, Makoto Inagawa, Takayuki Matsumoto
  • Patent number: 10261121
    Abstract: Embodiments of the present disclosure describe semiconductor equipment devices having a metal workpiece and a diamond-like carbon (DLC) coating disposed on a surface of the metal workpiece, thermal semiconductor test pedestals having a metal plate and a DLC coating disposed on a surface of the metal plate, techniques for fabricating thermal semiconductor test pedestals with DLC coatings, and associated configurations. A thermal semiconductor test pedestal may include a metal plate and a DLC coating disposed on a surface of the metal plate. The metal plate may include a metal block formed of a first metal and a metal coating layer formed of a second metal between the metal block and the DLC coating. An adhesion strength promoter layer may be disposed between the metal coating layer and the DLC coating. Other embodiments may be described and/or claimed.
    Type: Grant
    Filed: May 26, 2016
    Date of Patent: April 16, 2019
    Assignee: Intel Corporation
    Inventors: Jelena Culic-Viskota, Nader N. Abazarnia
  • Patent number: 10242885
    Abstract: A process to selectively etch a substrate surface comprising multiple metal oxides comprising exposing the substrate surface to a halogenation agent, and then exposing the substrate surface to a ligand transfer agent. The etch rate of the metals in the multiple metal oxides is substantially uniform.
    Type: Grant
    Filed: May 26, 2017
    Date of Patent: March 26, 2019
    Assignee: Applied Materials, Inc.
    Inventors: Jeffrey W. Anthis, David Thompson, Benjamin Schmiege
  • Patent number: 10240235
    Abstract: An apparatus for depositing a material layer originating from process gas on a substrate wafer, contains: a reactor chamber delimited by an upper dome, a lower dome, and a side wall; a susceptor for holding the substrate wafer during the deposition of the material layer; a preheating ring surrounding the susceptor; a liner, on which the preheating ring is supported in a centered position wherein a gap having a uniform width is present between the preheating ring and the susceptor; and a spacer acting between the liner and the preheating ring, the spacer keeping the preheating ring in the centered position and providing a distance ? between the preheating ring and the liner.
    Type: Grant
    Filed: February 29, 2012
    Date of Patent: March 26, 2019
    Assignee: SILTRONIC AG
    Inventors: Georg Brenninger, Alois Aigner, Christian Hager
  • Patent number: 10214808
    Abstract: A deposition apparatus for performing a deposition process by using a mask with respect to a substrate, the deposition apparatus includes a chamber, a support unit in the chamber, the support unit including first holes and being configured to support the substrate, a supply unit configured to supply at least one deposition raw material toward the substrate, and movable alignment units through the first holes of the support unit, the alignment units being configured to support the mask and to align the mask with respect to the substrate.
    Type: Grant
    Filed: April 20, 2017
    Date of Patent: February 26, 2019
    Assignee: Samsung Display Co., Ltd.
    Inventors: Myung-Soo Huh, Suk-Won Jung, Jeong-Ho Yi, Sang-Hyuk Hong, Yong-Suk Lee
  • Patent number: 10184193
    Abstract: A susceptor supports a semiconductor wafer and includes a substantially cylindrical body comprising an outer rim having an upper surface. The body also includes a recess extending into the body from the upper surface to a recess floor such that the recess is sized and shaped for receiving the wafer therein. The body further includes a ledge extending between the rim and the recess floor. The ledge includes a ramp comprising a first surface, a second surface, and a third surface. The first surface is oriented at a first angle with respect to the upper surface; the second surface is oriented at a second angle oriented with respect to the upper surface; and the third surface is oriented at a third angle with respect to the upper surface. Further, the second angle is greater than the first angle.
    Type: Grant
    Filed: May 18, 2016
    Date of Patent: January 22, 2019
    Assignee: GlobalWafers Co., Ltd.
    Inventor: John Allen Pitney
  • Patent number: 10163676
    Abstract: A apparatus includes a susceptor and a non-reactive gas source. The susceptor has through holes and a wafer support surface. Each through hole includes a lift pin and a lift pin head. The lift pin has a vertical degree of motion in the through hole to lift up or place a wafer on the susceptor. The lift pin head has at least one flow channel structure running from its first surface at least partially exposed to a bottom side of the susceptor through its second surface exposed to a top side of the susceptor wherein the lift pin. The non-reactive gas source is configured to flow a gas to a backside of the wafer through the flow channel structure through the bottom side of the susceptor.
    Type: Grant
    Filed: June 27, 2013
    Date of Patent: December 25, 2018
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Yen-Yu Chen, Wei-Jen Chen, Yi-Chen Chiang, Tsang-Yang Liu, Chang-Sheng Lee, Wei-Chen Liao, Wei Zhang
  • Patent number: 10094019
    Abstract: A film forming apparatus that includes a mounting table for loading a wafer, a encompassing member surrounding the mounting table and dividing an inside of a process container, an exhaust part that vacuum exhausts the process container, a clamp ring loaded upon an upper space of the encompassing member and lifted from the upper space of the encompassing member while contacting an inner circumference part thereof with an outer circumference of the wafer loaded on the mounting table, and a cylindrical wall extended downward from the clamp ring, formed along a circumference of the clamp ring into a cylinder shape, and positioned between an outer circumference surface of the mounting table and an inner circumference surface of the encompassing member.
    Type: Grant
    Filed: November 7, 2013
    Date of Patent: October 9, 2018
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Daisuke Toriya, Eiichi Komori, Manabu Amikura
  • Patent number: 10072354
    Abstract: Embodiments described herein relate to a lower side wall for use in a processing chamber. In one embodiment, the lower side wall includes an annular body. The annular body as an inner circumference, an outer circumference, a plurality of flanges projecting from the inner circumference, and a first concave portion formed in the outer circumference. The outer circumference has a plurality of grooves arranged in a circumferential direction of the lower side wall. In another embodiment, the annular body further includes a top surface having a mounting surface formed thereon and a second concave portion formed opposite the first concave portion. The second concave portion has a plurality of purge holes. In another embodiment, each groove of the plurality of grooves formed in the first concave portion has an arc shape.
    Type: Grant
    Filed: March 25, 2015
    Date of Patent: September 11, 2018
    Assignee: Applied Materials, Inc.
    Inventors: Akira Okabe, Yoshinobu Mori
  • Patent number: 10047440
    Abstract: The present disclosure generally relates to an improved method for forming low resistivity crystalline silicon films for display devices. The processing chamber in which the low resistivity crystalline silicon film is formed is pressurized to a predetermined pressure and a radio frequency power at a predetermined power level is delivered to the processing chamber. In addition, feeding locations of one or more VHF power generator and controlling of each VHF power generator via phase modulation and sweeping allows for plasma uniformity improvements by compensating for the non-uniformity of the thin film patterns produced by the chamber, due to the standing wave effect. Diffuser plate having two curved surfaces helps improve crystallinity uniformity.
    Type: Grant
    Filed: September 2, 2016
    Date of Patent: August 14, 2018
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Shuran Sheng, Su Ho Cho
  • Patent number: 10008399
    Abstract: An electrostatic puck assembly includes an upper puck plate, a lower puck plate and a backing plate. The upper puck plate comprises AlN or Al2O3 and has a first coefficient of thermal expansion. The lower puck plate comprises a material having a second coefficient of thermal expansion that approximately matches the first coefficient of thermal expansion and is bonded to the upper puck plate by a first metal bond. The backing plate comprises AlN or Al2O3 and is bonded to the lower puck plate by a second metal bond.
    Type: Grant
    Filed: August 19, 2015
    Date of Patent: June 26, 2018
    Assignee: Applied Materials, Inc.
    Inventor: Vijay D. Parkhe
  • Patent number: 9976211
    Abstract: An article such as a susceptor includes a body of a thermally conductive material coated by a first protective layer and a second protective layer over a surface of the body. The first protective layer is a thermally conductive ceramic. The second protective layer covers the first protective layer and is a plasma resistant ceramic thin film that is resistant to cracking at temperatures of 650 degrees Celsius.
    Type: Grant
    Filed: April 22, 2015
    Date of Patent: May 22, 2018
    Assignee: Applied Materials, Inc.
    Inventors: Vahid Firouzdor, Biraja P. Kanungo, Jennifer Y. Sun, Martin J. Salinas, Jared Ahmad Lee