Abstract: A blade for vacuum valves is provided with an opening/closing plate having one side surface coming into contact with a moving passage part. A screw coupling part is formed on the other side surface and a first elastic member seating part is formed on the outer circumference of the screw coupling part. A shaft connecting bar is provided on the other surface of the opening/closing plate having a contact protrusion part having a second elastic member seating part and a connecting part formed in the contact protrusion part so that a connecting unit is inserted. The first elastic member is provided between the first elastic member seating part and the second elastic member seating part to guide the elastic connection between the opening/closing plate and the shaft connecting bar.

Abstract: A semiconductor processing chamber is provided and may include a wafer transfer passage that extends through a chamber wall and has an inner passage surface defining an opening, an insert including an insert inner surface defining an insert opening, and a gas inlet. A first recessed surface of the wafer transfer passage extending at least partially around and outwardly offset from the inner passage surface, a first insert outer surface extending at least partially around and outwardly offset from the insert inner surface, and a first wall surface extending between the inner passage surface and the first recessed surface, at least partially define a gas distribution channel fluidically connected to the gas inlet, the first recessed surface is separated from the first insert outer surface by a first distance and an insert front surface faces and is separated from the first wall surface by a first gap distance.

Abstract: Provided are gas distribution apparatus with a delivery channel having an inlet end, an outlet end and a plurality of apertures spaced along the length. The inlet end is connectable to an inlet gas source and the outlet end is connectible with a vacuum source. Also provided are gas distribution apparatus with spiral delivery channels, intertwined spiral delivery channels, splitting delivery channels, merging delivery channels and shaped delivery channels in which an inlet end and outlet end are configured for rapid exchange of gas within the delivery channels.

Abstract: A system and method are disclosed for substrate handling. The system can include a robot adapter configured to connect to a robot, and first and second end effectors connected to the robot adapter. The robot adapter is configured to move the first and second end effectors from a first, retracted, position to a second, extended, position. In the extended position, the first or second end effector is disposed within a top entry load lock for picking or dropping a plurality of substrates therein. The first and second end effectors can be selectively and independently movable. The robot adapter can be rotatable so as to selectively position one of the end effectors over the top entry load lock. Methods for quickly swapping processed and unprocessed substrates in the top entry load lock are also disclosed and claimed.

Abstract: Methods and apparatuses for drying electronic devices are disclosed. Embodiments include methods and apparatuses that heat and decrease pressure within the electronic device. Some embodiments increase and decrease pressure while adding heat energy, such as by using a heated platen in contact with the electronic device or by supplying a gas (e.g., air), which may be heated, into the interior of the electronic device. Embodiments include heating the gas supplied into the interior of the electronic device with pump used to decrease pressure within the electronic device and/or a separate heater. Still other embodiments include controlling the temperature of the gas supplied into the electronic device. Still further embodiments automatically control, such as by using an electronic processor, some or all aspects of the drying of the electronic device.

Abstract: A storage unit includes carousels each including a plurality of levels and including a plurality of spaces for storing containers on each level, the carousels rotating around a vertical shaft; a loading port for loading and unloading the containers; transport units for transporting the containers between the loading port and the storage spaces; and pipes for feeding clean gas such that feeding is turned on and off for each storage space, the pipes being configured to be connected to an intake port provided for each container.

Abstract: Methods and apparatus for processing using a plasma source for the treatment of semiconductor surfaces are disclosed. The apparatus includes an outer vacuum chamber enclosing a substrate support, a plasma source (either a direct plasma or a remote plasma), and an optional showerhead. Other gas distribution and gas dispersal hardware may also be used. The plasma source may be used to generate activated species operable to alter the surface of the semiconductor materials. Further, the plasma source may be used to generate activated species operable to enhance the nucleation of deposition precursors on the semiconductor surface.

Abstract: A substrate processing device includes a depressurizable hot wall chamber having a sidewall with a temperature which becomes higher than room temperature and a first substrate transferring port provided in the sidewall, a depressurizable transfer chamber having a transfer arm mechanism and a second substrate transferring port, and a gate valve unit provided between the hot wall chamber and the transfer chamber. The gate valve unit includes: a housing having a sidewall provided with communicating holes, a first housing substrate transferring port, and a second housing substrate transferring port; a valve body which is elevatable in the housing; and a double sealing structure having a first sealing member and a second sealing member provided at an outer side of the first sealing member. The communicating holes communicate a gap between the first sealing member and the second sealing member with an internal space of the housing.

Abstract: A nitride semiconductor growth apparatus of the present invention comprises a chamber into which a reactive gas containing nitrogen is to be introduced as a material gas and a reaction part which is placed in the chamber and in which the material gas is brought into reaction to grow a nitride semiconductor. In the nitride semiconductor growth apparatus, in a region which includes a reaction part and part of an upstream side from a reaction part with respect to a flow of a material gas, portions to be in contact with the material gas (a gas introducing part, a current introducing part and a view port part and the like) are made from non-copper material (i.e., material containing no copper).

Abstract: Methods and apparatus for processing substrates are provided herein. In some embodiments, an apparatus for processing substrates includes a chamber body enclosing a processing volume, the chamber body comprising a chamber floor, a chamber wall coupled to the chamber floor, and a chamber lid removably coupled to the chamber wall, wherein at least one of the chamber floor, the chamber wall, and the chamber lid comprise passages for a flow of a thermal control media; a heater plate disposed adjacent to and spaced apart from the chamber floor; a sleeve disposed adjacent to and spaced apart from the chamber wall, the sleeve supported by the heater plate; and a first sealing element disposed at a first interface between the chamber wall and the chamber lid.

Abstract: The present invention relates to a cluster tool for processing semiconductor substrates. One embodiment of the present invention provides a mainframe for a cluster tool comprising a transfer chamber having a substrate transferring robot disposed therein. The substrate transferring robot is configured to shuttle substrates among one or more processing chambers directly or indirectly connected to the transfer chamber. The mainframe further comprises a shutter disk shelf configured to store one or more shutter disks to be used by the one or more processing chambers, wherein the shutter disk shelf is accessible to the substrate transferring robot so that the substrate transferring robot can transfer the one or more shutter disks between the shutter disk shelf and the one or more processing chambers directly or indirectly connected to the transfer chamber.

Abstract: A passing apparatus includes: upper and lower sealing rolls dealing with variations in a thickness of a proceeding strip, the upper and lower sealing rolls allowing the strip to pass; and a strip sealing unit dealing with variations in a width of the proceeding strip, the strip sealing unit cooperating with the upper and lower sealing rolls to seal the proceeding strip passing through a chamber in a state in which the strip sealing unit surrounds the proceeding strip.

Abstract: Systems are provided that include one or more retractable deposition source assemblies that eliminate the need for a bellows, but do not require breaking the ultra-high vacuum of a growth module for source replacement or recharging with deposition material. Systems of the present invention may include source heads that allow for a differential pumping option that provides marked improvement in base pressure around the source head (and material) that provides longer lifetimes for sources in corrosive, reactive or oxidizing environments. In addition, systems of the invention do not require an entire growth module to be vented to refill or repair an effusion source. Instead, for maintenance events that are tied to a specific source, a retractable source assembly of the present invention allows the sources to be withdrawn from the system, isolated from the growth environment, and removed without venting the entire chamber of the growth module.

Abstract: A gas processing apparatus includes a process chamber for installing a process target therein, a through-hole being air-tightly in communication with a gas supply pipe, an injector for supplying gas into the process chamber, a sleeve being engaged to an outer peripheral surface of the injector inside the through-hole, an annular sealing member engaged to the outer peripheral surface of the injector, an engagement surface facing the sealing member, and a pressing part for pressing the sleeve toward the outer side of the process chamber. The pressing part compresses the sealing member by exerting pressure to the engagement surface from an end surface of the sleeve toward the sealing member, so that an inside of the injector and an outside of the injector are air-tightly sealed.

Abstract: The invention relates to a device and a method for continuous chemical vapor deposition under atmospheric pressure on substrates. The device is hereby based on a reaction chamber, along the open sides of which the substrates are guided, as a result of which the corresponding coatings can be effected on the side of the substrates which is orientated towards the chamber interior.

Abstract: Provided is an atomic layer deposition apparatus including: a sealable deposition chamber; a holding portion configured to hold a substrate including a deposition surface in the deposition chamber; a supply mechanism that includes an introduction portion connected to a gas supply source that supplies gas and is configured to supply gas introduced into the introduction portion to the deposition chamber from a position opposing the deposition surface; and an exhaust mechanism that includes an exhaust portion connected to an exhaust mechanism capable of exhausting gas and is configured to exhaust the deposition chamber from a position opposing the deposition surface.

Abstract: Embodiments of the present disclosure provide a liner assembly including a plurality of individually separated gas passages. The liner assembly enables tenability of flow parameters, such as velocity, density, direction and spatial location, across a substrate being processed. The processing gas across the substrate being processed may be specially tailored for individual processes with a liner assembly according to embodiment of the present disclosure.

Abstract: The various embodiments of the invention provide for relative movement of the substrate and a process head to access the entire wafer in a minimal space to conduct combinatorial processing on various regions of the substrate. The heads enable site isolated processing within the chamber described and method of using the same are described.

Abstract: Provided is a substrate processing apparatus. The substrate processing apparatus includes a chamber body having an opened upper side, the chamber body providing an inner space in which processes with respect to a substrate are performed, a chamber lid disposed on an upper portion of the chamber body to close the opened upper side of the chamber body, and a showerhead disposed on a lower portion of the chamber lid to supply a reaction gas into the inner space. The showerhead includes a flange contacting the chamber lid, the flange having a passage recessed from a top surface of the flange to allow a refrigerant to flow therein, and a flat plate disposed inside the flange, the flat plate having at least one injection hole for injecting the reaction gas in a thickness direction thereof.

Abstract: A film forming apparatus includes a substrate holding unit holding substrates at intervals; a reaction chamber accommodating the substrate holding unit; a raw material gas supply pipe supplying a raw material gas of a thin film to the substrate; a support unit supporting the reaction chamber; a heating unit being disposed outside the reaction chamber and heating the substrates; a protection pipe including one end portion fixed to the support unit, being extended along an arrangement direction of the substrates between the substrate holding unit and the reaction chamber, and including a temperature measuring unit inserted therein; and a protrusion portion being provided on at least one of an outer surface of the protection pipe and an inner surface of the reaction chamber, and providing a gap between the outer surface of the protection pipe and the inner surface of the reaction chamber.

Abstract: A process chamber is provided for an etching apparatus that etches a substrate, such as a liquid crystal display (LCD) substrate, using plasma. The process chamber may include a chamber body, in one wall of which a gate slit is formed, a rotary inner door that opens and closes an inner opening of the gate slit, and a door driving mechanism that rotates the inner door. When the substrate is etched, the inner door is closed preventing an interior of the chamber body from communicating with the gate slit. Thereby, a space in which the plasma is formed may be maintained symmetrical, so that the plasma may be uniformly distributed in an interior of the chamber body.

Abstract: An apparatus (1) for PECVD deposition of a thin layer of a barrier-effect material in a receptacle (3), the apparatus comprising: a structure (5) receiving the receptacle (3), said structure (5) defining a plasma-presence zone (18), said structure (5) being provided with an orifice (14) defining an axis (A1) and presenting an inside opening (15) opening out into the plasma-presence zone (18), and an outside opening (16) opening out outside said zone (18); an electromagnetic wave generator; and an optical plasma monitor device (19) including a pick-up (21) placed outside the plasma-presence zone (18) on the axis (A1) of said orifice.

Abstract: Disclosed herein is a flat panel display (FPD) manufacturing apparatus for performing a desired process for a substrate positioned in a chamber after establishing a vacuum atmosphere in the chamber. The vacuum chamber is divided into a chamber body and an upper cover to ensure easy opening/closing operations of the upper cover.

Abstract: Provided is a continuous deposition apparatus wherein replacement operations of a feeding unit and a take-up unit are easily performed. The continuous deposition apparatus is provided with: a vacuum chamber (1); a deposition roller (2); evaporation sources (7L1, 7L2, 7R) which supply a deposition material to a film substrate from the side of the film substrate which is wound on the deposition roller and on which a coating is to be deposited; a feeding unit (3) which supplies the film substrate to the deposition roller (2); and a take-up unit (4) which takes up the film substrate after the coating is deposited thereon.

Abstract: The present invention provides a seal device comprising a sealing passage which allows communication between a first space and a second space, and evacuation lines individually connected to the first space and the sealing passage. A gas feed line for feeding dry gas is connected to the sealing passage.

Abstract: A tool for depositing multilayer coatings onto a substrate. The tool includes a housing defining a vacuum chamber connected to a vacuum source, deposition stations each configured to deposit a layer of multilayer coating on the substrate, a curing station, and a contamination reduction device. At least one of the deposition stations is configured to deposit an inorganic layer, while at least one other deposition station is configured to deposit an organic layer. In one tool configuration, the substrate may travel back and forth through the tool as many times as needed to achieve the desired number of layers of multilayer coating. In another, the tool may include numerous housings adjacently spaced such that the substrate may make a single unidirectional pass. The contamination reduction device may be configured as one or more migration control chambers about at least one of the deposition stations, and further includes cooling devices, such as chillers, to reduce the presence of vaporous layer precursors.

Abstract: Atomic layer deposition (ALD) techniques typically involve briefly exposing the surface of a substrate to a precursor within an atomic layer deposition chamber, and purging the chamber with a purge gas, such as nitrogen, before exposing the substrate to a second precursor. A series of such cycles results in the deposition of microscopically thin film layers on the substrate surface that are further processed to generate a semiconductor component. In order to reduce unintended oxygen deposition, the chamber is typically evacuated to a vacuum level of 10e?06 torr-liters/second, which is suitable for the related techniques of chemical vapor deposition. However, atomic layer deposition is demonstrably more sensitive to oxygen contamination, due to the exposure of each layer to residual oxygen within the chamber. Tighter process control is achievable by performing atomic layer deposition at a higher vacuum level, not exceeding approximately 10e?06 torr-liters/second, in order to reduce oxygen contamination.

Abstract: A semiconductor manufacturing equipment includes a first chamber that has a first connection hole, a second chamber that has a second connection hole connected to the first connection hole of the first chamber, an O-ring that is provided between the first chamber and the second chamber so as to surround the first connection hole and the second connection hole, and a cover portion that covers a space between the first chamber and the second chamber.

Abstract: A substrate processing chamber includes a lift actuator that moves a pedestal between a substrate loading position and a substrate processing position. An adjustable seal defines an expandable sealed volume between a bottom surface of the pedestal and a bottom surface of the substrate processing chamber and is moveable between the substrate loading position and the substrate processing position. When the pedestal is in the substrate processing position, the pedestal and the adjustable seal define a first inert volume and a first process volume. When the pedestal is in the substrate loading position, the pedestal and the adjustable seal define a second inert volume and a second process volume. The second inert volume is less than the first inert volume and the second process volume is greater than the first process volume.

Abstract: An apparatus and associated method for vapor deposition of a sublimated source material as a thin film on a photovoltaic (PV) module substrate includes a deposition head wherein a source material is sublimated. A distribution manifold is provided with a plurality of passages defined therethrough for passage of the sublimated source material to the substrate. A shutter plate is disposed above the distribution manifold and includes a plurality of passages therethrough that align with the passages in the distribution manifold in a first position of the shutter plate. The shutter plate is movable to a second position wherein the shutter plate blocks the passages in the distribution manifold to flow of sublimated material therethrough. A lifting mechanism is configured between the shutter plate and the distribution manifold to lift and move the shutter plate between the first and second positions without sliding the shutter plate on the distribution manifold.

Abstract: A vacuum processing apparatus includes a vacuum processing chamber; a load lock chamber connected to the vacuum processing chamber via a gate valve or via a gate valve and a depressurized space and also connected to an atmospheric space via a door valve, an interior atmosphere of the load lock chamber being changed between a substantially atmospheric state and a depressurized state; an air blowing portion, provided at a vicinity of the door valve in the atmospheric space, for blowing a zonal airflow vertically downward from a position substantially even with or higher than a top end of a passageway of the door valve; and an air suctioning portion for suctioning the airflow or the inert gas from the air blowing portion by a vacuum force at a position substantially even with or lower than a bottom end of the passageway of the door valve.

Abstract: A deposition apparatus according to an exemplary embodiment of the present invention is a lateral-flow deposition apparatus in which in which a process gas flows between a surface where a substrate is disposed and the opposite surface, substantially in parallel with the substrate. The lateral-flow deposition apparatus includes: a substrate support that moves up/down and rotates the substrate while supporting the substrate; a reactor cover that defines a reaction chamber by contacting the substrate support; and a substrate support lifter and a substrate support rotator that move the substrate support.

Abstract: Disclosed herein is a flat panel display (FPD) manufacturing apparatus for performing a desired process for a substrate positioned in a chamber after establishing a vacuum atmosphere in the chamber. The vacuum chamber is divided into a chamber body and an upper cover to ensure easy opening/closing operations of the upper cover.

Abstract: An apparatus for semiconductor processing capable of performing semiconductor processing such as etching, depositing, etc. on a surface of a substrate such as a wafer. The apparatus for semiconductor processing, comprises: a reaction chamber having a gate through which a substrate to be processed is transferred; one or more shower heads disposed at an upper side of the reaction chamber, for spraying gas so as to perform semiconductor processing; one or more wafer supporting units disposed at an inner lower side of the reaction chamber in correspondence to each of the shower heads, for supporting the substrate; a processing space forming unit disposed in the reaction chamber, for forming a processing space for semiconductor processing by sealing the shower heads and the wafer supporting units; and an exhausting system connected to the processing space forming unit for controlling a pressure and air exhaustion inside the reaction chamber and the processing space formed by the processing space forming unit.

Abstract: A vertical heat treatment apparatus enabling the insertion of a temperature sensor in the reaction tube without disassembling the apparatus is disclosed. The vertical heat treatment apparatus includes a reaction tube; a heating section; a wafer holding section; a supporting section movably provided in the vertical direction so as to seal the reaction tube while the wafer holding section is in the reaction tube; a temperature sensor insertion section provided in the supporting section and having a through hole for guiding a temperature sensor so that the temperature sensor can be inserted into the reaction tube; and a cap section for opening and closing the through hole of the temperature sensor insertion section while the wafer holding section is on the supporting section.

Abstract: A gas isolation chamber comprises a vacuum chamber, a first body module, a second body module and a first temperature modulator. The vacuum chamber comprises a first chamber part, a second chamber part and at least one first gas valve unit. The first body module is disposed on the inner wall of the first chamber part and has a first gas hole corresponding to the position of the first gas valve unit. The first gas hole is connected to the first gas valve unit. The second body module is disposed on the inner wall of the second chamber part such that a slit channel can be formed between the second and the first body modules. The first temperature modulator is disposed in the first body module. The gas isolation chamber is further combined with the vacuum film process chambers to form a plasma deposition apparatus for proceeding continuous deposition process.

Abstract: A method and apparatus for cleaning a process chamber are provided. In one embodiment, a process chamber is provided that includes a remote plasma source and a process chamber having at least two processing regions. Each processing region includes a substrate support assembly disposed in the processing region, a gas distribution system configured to provide gas into the processing region above the substrate support assembly, and a gas passage configured to provide gas into the processing region below the substrate support assembly. A first gas conduit is configured to flow a cleaning agent from the remote plasma source through the gas distribution assembly in each processing region while a second gas conduit is configured to divert a portion of the cleaning agent from the first gas conduit to the gas passage of each processing region.

Abstract: Apparatus for use in an inline substrate processing tool are provided herein. In some embodiments, a door for use in an inline substrate processing tool between a first and a second substrate processing module coupled to one another in a linear arrangement may include a reflective body disposed between two cover plates of substantially transparent material, configured to reflect light and heat energy into each of the at first and second substrate processing modules, wherein the door is selectively movable, via an actuator coupled to the door, between an open position that fluidly couples the first and second substrate processing modules to a closed position that isolates the first substrate processing module from the second substrate processing module.

Abstract: A method and apparatus for depositing III-V material is provided. The apparatus includes a reactor partially enclosed by a selectively permeable membrane 12. A means is provided for generating source vapors, such as a vapor-phase halide of a group III element (IUPAC group 13) within the reactor volume 10, and an additional means is also provided for introducing a vapor-phase hydride of a group V element (IUPAC group 15) into the volume 10. The reaction of the group III halide and the group V hydride on a temperature-controlled substrate 18 within the reactor volume 10 produces crystalline III-V material and hydrogen gas. The hydrogen is preferentially removed from the reactor through the selectively permeable membrane 12, thus avoiding pressure buildup and reaction imbalance. Other gases within the reactor are unable to pass through the selectively permeable membrane.

Abstract: A substrate temperature regulation fixed apparatus has a base substance on which a vacuumed object is placed, an adhesive layer and a base plate. The base substance is fixed on the base plate through the adhesive layer. The adhesive layer contains a substance having plasma resistance.

Abstract: A seal for sealing an interface between a container and a lid of a process chamber. The seal comprises a first seal element and a second seal element that are arranged to seal the interface in series, with the second seal element being situated to encounter processing activity upstream of the fist seal element. The first seal element has a deflectable portion and a protrusion extending radially from the deflectable portion. The second seal element has a radially extending recess in which the protrusion of the first seal element is received. The protrusion and recess interlock to restrict separation and/or rotation of the first and second seal elements. Inclined surfaces of the first seal element interact with the second seal element to apply axial sealing forces to sealing surfaces of the second seal member.

Abstract: Affords nitride semiconductor crystal manufacturing apparatuses that are durable and that are for manufacturing nitride semiconductor crystal in which the immixing of impurities from outside the crucible is kept under control, and makes methods for manufacturing such nitride semiconductor crystal, and the nitride semiconductor crystal itself, available. A nitride semiconductor crystal manufacturing apparatus (100) is furnished with a crucible (101), a heating unit (125), and a covering component (110). The crucible (101) is where, interiorly, source material (17) is disposed. The heating unit (125) is disposed about the outer periphery of the crucible (101), where it heats the crucible (101) interior. The covering component (110) is arranged in between the crucible (101) and the heating unit (125).

Abstract: An integrated deposition system is described that is capable of vaporizing low vapor pressure liquid precursors and conveying the vapor to a processing region to fabricate advanced integrated circuits. The integrated deposition system includes a heated exhaust system, a remote plasma generator, a processing chamber, a liquid delivery system, and a computer control module that together create a commercially viable and production worthy system for depositing high capacity dielectric materials from low vapor pressure precursors.

Abstract: A sealing part that is inexpensive and enable excellent durability to be secured without the need for a predetermined sealing space as would be required for a double sealing structure. A sealing part seals an inside of a reduced pressure vessel from an outside, in which a high-elasticity polymeric material-eroding eroding substance is present and which is comprised of a substrate processing apparatus carrying out predetermined processing on a substrate housed in the reduced pressure vessel. The sealing part has a radical sealing member and a vacuum sealing member. The radical sealing member is disposed on an inside side of the reduced pressure vessel and is resistant to the eroding substance. The vacuum sealing member is made of the high-elasticity polymeric material and is disposed on an outside side of the reduced pressure vessel. At least one refuge space is formed through at least part of the radical sealing member and at least part of the vacuum sealing member being separated from one another.

Abstract: Substrate processing systems and methods are described for site-isolated processing of substrates. The processing systems include numerous site-isolated reactors (SIRs). The processing systems include a reactor block having a cell array that includes numerous SIRs. A sleeve is coupled to an interior of each of the SIRs. The sleeve includes a compliance device configured to dynamically control a vertical position of the sleeve in the SIR. A sealing system is configured to provide a seal between a region of a substrate and the interior of each of the SIRs. The processing system can include numerous modules that comprise one or more site-isolated reactors (SIRs) configured for one or more of molecular self-assembly and combinatorial processing of substrates.

Abstract: The present invention provides a deposition film forming apparatus including a reaction container, an exhaust device and an exhaust gas flow path for causing a material gas to flow from the reaction container to the exhaust device, wherein the exhaust gas flow path includes a portion whose cross section expands with a step with respect to a direction in which the material gas flows and the deposition film forming apparatus further includes a cleaning gas flow device for causing the cleaning gas to directly flow into a region closer to the exhaust device side than the step of the exhaust gas flow path, a deposition film forming method using the deposition film forming apparatus and a method of manufacturing an electrophotographic photosensitive member using the deposition film forming method.

Abstract: Apparatus for the delivery of a gas to a chamber and methods of use thereof are provided herein. In some embodiments, a gas distribution system for a process chamber may include a body having a first surface configured to couple the body to an interior surface of a process chamber, the body having a opening disposed through the body; a flange disposed proximate a first end of the opening opposite the first surface of the body, the flange extending inwardly into the opening and configured to support a window thereon; and a plurality of gas distribution channels disposed within the body and fluidly coupling a channel disposed within the body and around the opening to a plurality of holes disposed in the flange, wherein the plurality of holes are disposed radially about the flange.

Abstract: Apparatus and method for continuous pressure control in a process chamber. An apparatus includes a process chamber configured to receive a wafer; at least one pump coupled to the process chamber for maintaining pressure in the process chamber; an inlet for receiving reactive gasses into the process chamber; and a pressure control valve positioned between the at least one pump and configured to seal the process chamber to control the pressure in the process chamber. A method includes disposing at least one semiconductor wafer into a process chamber that is coupled to a pump for maintaining a sub-atmospheric pressure within the process chamber; introducing reactive process gasses into the process chamber; using a pressure control valve, at least partially sealing the process chamber; and increasing the pressure within the process chamber while exposing the semiconductor wafer to the process gasses to form epitaxial material. Additional embodiments are disclosed.

Abstract: The present invention relates to methods and apparatus that are optimized for producing Group III-N (nitrogen) compound semiconductor wafers and specifically for producing GaN wafers. Specifically, the methods relate to substantially preventing the formation of unwanted materials on an isolation valve fixture within a chemical vapor deposition (CVD) reactor. In particular, the invention provides apparatus and methods for limiting deposition/condensation of GaCl3 and reaction by-products on an isolation valve that is used in the system and method for forming a monocrystalline Group III-V semiconductor material by reacting an amount of a gaseous Group III precursor as one reactant with an amount of a gaseous Group V component as another reactant in a reaction chamber.

Abstract: A film-forming apparatus includes a heat generator exposed to a film-forming gas drawn into a chamber to generate film formation species. A film-forming gas supply system supplies the film-forming gas into the chamber. A control unit sets the heat generator in a non-heated state during a cleaning process that discharges a film formation residue from the chamber. A cleaning gas supplying system supplies a cleaning gas including ClF3 into the chamber. A temperature adjustment unit adjusts the chamber to a target temperature from 100° C. or higher to 200° C. or less in the cleaning process. A discharge system discharges a reaction product produced by a reaction between the film formation residue and the cleaning gas from the chamber.