Abstract: To provide a substrate processing apparatus, comprising: a reaction vessel having a processing chamber inside that processes a substrate; a heating device that heats said substrate from an outer peripheral side of the reaction vessel; a lid member that closes the processing chamber; an attachment/detachment jig placed on the lid member for attaching/detaching the reaction vessel from an inside of the heating device; and a support section provided in an upper side of a lower end of the reaction vessel on an inside wall of the reaction vessel, and abutted on an upper surface of the attachment/detachment jig for attaching/detaching the reaction vessel from the inside of the heating device.

Abstract: A method for fabricating a substitute component for bone, including the processes of: provision of a chemical spray including at least three of calcium chloride, hydrogen phosphate, hydrogen carbonate and water to form a combined solution; reaction and precipitation of the combined solution onto a substrate; allowing the precipitated particles to form a porous structure on the substrate; applying substantially isostatic pressure to the porous structure to form a compressed structure; and (optional) providing one or more through-holes in the compressed structure to promote osteoinduction.

Abstract: The present invention relates to a vacuum chamber and to its production. According to the invention, the vacuum chamber comprises a frame into which insert plates are placed. The insert plates form together with the frame a closed space in which a vacuum can be created. Preferably, the shell of the frame is extracted from an integrally formed metal piece, with a large portion of material being removed, leading to openings for the insert plates to be created. This has among others the advantage that no welding seams are necessary where the individual plates are inserted.

Abstract: A vacuum chamber system for semiconductor processing includes at least two evacuable vacuum chambers for receiving semiconductor elements to be processed, each including a vacuum chamber opening and a vacuum chamber sealing surface, and transfer aspects by which one of the vacuum chambers can be moved relative to another of the vacuum chambers and can be docked with it in a vacuum-tight manner by producing substantially parallel opposite positions of the vacuum chamber sealing surfaces which are subject to possible misalignments. At least one of the vacuum chambers has support aspects which support one vacuum chamber on the other vacuum chamber in the evacuated, docked state.

Abstract: A CVD device has a reaction furnace (39) for processing a wafer (1); a seal cap (20) for sealing the reaction furnace (39) hermetically; an isolation flange (42) opposite to the seal cap (20); a small chamber (43) formed by the seal cap (20), the isolation flange (42), and the wall surface in the reaction furnace (39); a feed pipe (19b) for supplying a first gas to the small chamber (43); an outflow passage (42a) provided in the small chamber (43) for allowing the first gas to flow into the reaction furnace (39); and a feed pipe (19a) provided downstream from the outflow passage (42a) for supplying a second gas into the reaction furnace (39). Byproducts such as NH4Cl are prevented from adhering to low temperature sections such as the furnace opening and therefore the semiconductor device production yield is therefore increased.

Abstract: A deposition apparatus configured to form a thin film on a substrate includes: a reactor wall; a substrate support positioned under the reactor wall; and a showerhead plate positioned above the substrate support. The showerhead plate defines a reaction space together with the substrate support. The apparatus also includes one or more gas conduits configured to open to a periphery of the reaction space at least while an inert gas is supplied therethrough. The one or more gas conduits are configured to supply the inert gas inwardly toward the periphery of the substrate support around the reaction space. This configuration prevents reactant gases from flowing between a substrate and the substrate support during a deposition process, thereby preventing deposition of an undesired thin film and impurity particles on the back side of the substrate.

Abstract: In a first aspect, a substrate carrier is provided that includes an enclosure adapted to be sealable and to house at least one substrate. The substrate carrier includes a first port leading into the enclosure and adapted to allow a flow of gas into the enclosure while the substrate carrier is closed. Numerous other aspects are provided.

Abstract: Formation of a boron compound is suppressed on the inner wall of a nozzle disposed in a high-temperature region of a process chamber. A semiconductor device manufacturing method comprises forming a boron doped silicon film by simultaneously supplying at least a boron-containing gas as a constituent element and a chlorine-containing gas a constituent element to a gas supply nozzle installed in a process chamber in a manner that concentration of chlorine (Cl) is higher than concentration of boron in the gas supply nozzle.

Abstract: An ALD reactor for treating one or more substrates is provided. The ALD reactor includes at least one reaction chamber which has a front plate including gas connections for introducing starting materials, flushing gases and the like gases into the reaction chamber. In addition, the front plate is arranged for being placed over the substrate for closing the reaction chamber and at distance from the substrate surface for opening the reaction chamber such that the substrate is arranged for being loaded below, above or in front of the front plate, when the reaction chamber is in the open state, in which the front plate is at a distance from the substrate and such that the substrate is treatable by the ALD method in the closed state of the reaction chamber, in which the front plate is placed onto the substrate.

Abstract: To provide a valve element unit and a gate valve apparatus which realize a reduction in manufacturing cost by a compact and simple structure and smooth rotary driving of the valve element without greatly moving the valve element in the direction of the center of rotation when the valve element is rotary driven. When a valve element unit 52 is rotary driven by valve element driving mechanisms 54, a rotary drive radius R2 of longitudinal both end sides of a first valve element 56 is smaller than a rotary drive radius R1 of a longitudinal center side of the first valve element 56.

Abstract: A system and method for movably sealing a vapor deposition source is described. One embodiment includes a system for coating a substrate, the system comprising a deposition chamber; a vapor pocket located within the deposition chamber; and an at least one movable seal, wherein the at least one movable seal is configured to form a first seal with a first portion of a substrate, and wherein the first seal is configured to prevent a vapor from leaking past the first portion of the substrate out of the vapor pocket. In some embodiments, the movable seal may comprise a first flange, wherein the first flange forms a wall of the vapor pocket; and a second flange, wherein the second flange is configured to be movably disposed within a first groove of the source block.

Abstract: Systems and methods for preventing or reducing contamination enhanced laser induced damage (C-LID) to optical components are provided including a housing enclosing an optical component, a container configured to hold a gas phase additive and operatively coupled to the housing; and a delivery system configured to introduce the gas phase additive from the container into the housing and to maintain the gas phase additive at a pre-selected partial pressure within the housing. The gas phase additive may have a greater affinity for the optical component than does a contaminant and may be present in an amount sufficient to inhibit laser induced damage resulting from contact between the contaminant and the optical component. The housing may be configured to maintain a sealed gas environment or vacuum.

Abstract: A sealing structure for sealing a gap between a vacuum container 2 and a lid 3 contacted to an opening of the vacuum container 2 to close it. A cavity 66 is formed in an elastomer O-ring 64 interposed between the vacuum container 2 and the lid 3, and a cooling pipe 65 is inserted in the cavity 66. The O-ring is cooled by circulating coolant in the cooling pipe 65. Since permeability of gas in a solid depends on a temperature, the amount of gas permeating the O-ring 64, especially oxygen, can be reduced by cooling the O-ring 64, thus maintaining a vacuum level in the vacuum container 2 at a high level. Since the O-ring 64 is cooled from its inside, only the O-ring 64 can be cooled locally without influencing temperature controls at other parts of the vacuum device.

Abstract: An apparatus and method for atomic layer deposition with improved efficiency of both chemical dose and purge is presented. The apparatus includes an integrated equipment and procedure for chamber maintenance.

Abstract: The present invention relates to a device for carrying out a surface treatment of substrates under vacuum, which comprises a housing (1) comprising chambers (2-5) communicate with a vacuum source, at least one of which chambers serves as vacuum lock to the remaining chambers when surface treatment processes are in progress. The housing (1) is divided into an upper and a lower housing half (6, 7) of which at least one has symmetrically distributed recesses (8). Pivotally mounted between the housing halves (6, 7) is a revolver (9), which comprises recesses (10) in which substrate to be treated is placed. The housing halves (6, 7) are designed to be in two positions, in the first of which they are separated from the revolver (9) and in the second of which they are in contact therewith. In the first position the revolver (9) is designed to be turned to predefined rotational positions at which recesses in the housing halves (6, 7) and the revolver (9) coincide in the chambers (2-5).

Abstract: Hydride vapor-phase deposition (HVPE) systems are disclosed. An HVPE hydride vapor-phase deposition system may include a reactant source chamber and a growth chamber containing a susceptor coupled to the reactant source chamber. The reactant source chamber may be configured to create a reactant gas through a chemical reaction between a solid or liquid precursor and a different precursor gas. The reactant source chamber can be configured to operate at a temperature T(M) significantly above room temperature. The reactant gas can be chemically unstable at or near room temperature. The susceptor is configured to receive a substrate and maintain the substrate at a substrate temperature T(S). The growth chamber includes walls can be configured to operate at a temperature T(C) such that T(M), T(S) are greater than T(C).

Abstract: Substrate processing systems and methods are described for site-isolated processing of substrates. The processing systems include numerous site-isolated reactors (SIRs). The processing systems include a reactor block having a cell array that includes numerous SIRs. A sleeve is coupled to an interior of each of the SIRs. The sleeve includes a compliance device configured to dynamically control a vertical position of the sleeve in the SIR. A sealing system is configured to provide a seal between a region of a substrate and the interior of each of the SIRs. The processing system can include numerous modules that comprise one or more site-isolated reactors (SIRs) configured for one or more of molecular self-assembly and combinatorial processing of substrates.

Abstract: In a heat treatment method in which a semiconductor wafer is carried into a heat treatment chamber constituted of a heat plate and a cover body covering the heat plate and processed, until the wafer is carried into the heat treatment chamber, an opening and closing operation of the cover body is performed to maintain the accumulated heat temperature of the heat treatment chamber at a prescribed processing temperature.

Abstract: A method and apparatus for preventing arcing at a port exposed to a plasma in a plasma chamber use circuit components causing a door sealing the port to provide a short circuit path at excitation frequency of the plasma. In one embodiment, the door is a slit valve door sealing a substrate transfer port of an etch chamber.

Abstract: A semiconductor wafer processing and analysis apparatus (20) includes a processing micro chamber (22) for closely receiving a semiconductor wafer (27) therein. The chamber may be opened for loading and removing the semiconductor wafers and then closed for processing of the wafer wherein chemical reagents and other fluids are introduced into the chamber. Small clearances are provided between the upper surface, the lower surfaces, and the perimeter edge of the wafer and the corresponding portions of the processing chamber. A high-speed collection system is provided for collecting and removing the spent reagents and fluids from the chamber for either on-line or off-line analysis or for waste treatment.

Abstract: A plasma processing apparatus is described and which includes a chamber having at least two processing stations which are separated by a wall. At least one channel is formed in the wall, and wherein the channel has a width to length ratio of less than about 1:3.

Abstract: The invention relates to a sealing lock, for an in vacuo chamber for deposition on a, preferably metallic, endless strip, characterized in that: the metal rollers are mounted on brackets, fixed to the covers and are immovable like the latter, the rollers of the same pair have the axes thereof arranged in the same vertical plane and are of different diameter, the position of the roller with the smaller diameter being alternated up and down on passing from a given pair to the next pair, the support cradles for the two rollers of the same pair have a lateral projection towards the center, the spacing of which with regard to the base for said rollers defines a second gap.

Abstract: A method of performing a CVD process on target substrates all together in a vertical CVD apparatus includes repeating, a plurality of times, first and second steps of supplying first and second reactive gases, respectively. The first reactive gas has a vapor pressure of 1.33 kPa or less, or a bond-dissociation energy of 250 kJ/mol or less. The second reactive gas has a vapor pressure of 2.66 kPa or more, and a bond-dissociation energy of 250 kJ/mol or more. The first reactive gas is supplied from a first delivery hole disposed at a bottom of the process chamber. The second reactive gas is supplied from a plurality of second delivery holes arrayed in a vertical direction at a position adjacent to edges of the target substrates entirely over a vertical length of the target substrates stacked at intervals.

Abstract: Provided are a chemical vapor deposition (CVD) apparatus and a substrate processing apparatus. The CVD apparatus includes a chamber defining a processing chamber for forming a thin film on a substrate, a shower head that discharges processing gas into the processing chamber, a lid for opening and closing the chamber, a hinge part that pivotably couples the lid to the chamber at one side of the lid, a clamping part is provided to press the other side of the lid to secure the lid to the chamber, and a control part adapted to raise or lower the one side of the lid when the clamping part is pressing the other side of the lid.

Abstract: Disclosed herein is a flat panel display (FPD) manufacturing apparatus for performing a desired process for a substrate positioned in a chamber after establishing a vacuum atmosphere in the chamber. The vacuum chamber is divided into a chamber body and an upper cover to ensure easy opening/closing operations of the upper cover.

Abstract: A plasma processing plant for plastic bottles, having a vacuum chamber arranged inside the processing chamber and when a respective bottle opening is pressed against a valve, the valve will open and establish a connection between the interior of the bottle and the vacuum chamber, and the chambers are continuously sealed against one another in a gastight fashion. With such approach, the gas can be conducted more easily and the number of control mechanisms can be reduced.

Abstract: In an embodiment, heat treatment equipment comprises a process tube, an exhaust duct connected to the process tube, and, during operation, exhausting gases present within the process tube. The heat treatment equipment also comprises a hollow pressure control member interposed between the process tube and the exhaust duct, the pressure control member being operatively connected to the process tube and the exhaust duct respectively, and including one or a number of openings. Negative pressure is avoided in the process tube during heat treatment processes so that unwanted gas and impurities cannot enter the process tube from outside.

Abstract: UV-resistant materials are disclosed that include at least one self-supporting film of UV-resistant clay particles and that are substantially non-reactive to incident UV radiation. An exemplary material is substantially non-transmissive to at least one UV wavelength of less than 300 nm, can include a polymeric material for enhanced flexibility, and can include an additive that is non-transmissive to at least one UV wavelength of greater than 300 nm. The material can be multiple layers of respective clay films. The materials can be used to form UV-resistant devices such as seals, mounting cushions, and light-shields for use in any of various UV-illumination sources and process systems. An example UV-illumination source is an excimer laser. An example system is a light-CVD system.

Abstract: A method, computer readable medium, and system for treating a substrate in a process space of a processing system that is vacuum isolated from a transfer space of the processing system is described. A sealing device is disposed between a first chamber assembly configured to define the process space and a second chamber assembly configured to define the transfer space. When the sealing device is engaged, vacuum isolation is provided between the process space and the transfer space. The sealing device comprises two or more contact ridges with one or more pockets formed therebetween. When the sealing device is engaged between the first chamber assembly and the second chamber assembly, gas is trapped in the one or more pockets. This trapped gas assists the release of the sealing device upon disengagement of the sealing device between the first chamber assembly and the second chamber assembly.

Abstract: Stress within a suspension wall for suspending a showerhead in a process chamber is ameliorated by one or more of: (1) Openings in the suspension wall that reduce exposure of the suspension wall to process gas or ambient atmosphere when the chamber lid is opened. (2) A substantially vertical arrangement of one or more rifts in the suspension wall which facilitate horizontal buckling or flexing of the suspension wall. (3) A plurality of suspension walls whose respective central portions are coplanar. (4) A gas sealing skirt that helps protect the suspension wall from direct contact with process gas. The gas sealing skirt is connected to either the chamber wall or the showerhead but is not connected to both.

Abstract: A vacuum valve assembly for use in a vacuum processing chamber includes a seat defining an opening in the vacuum valve, with the seat having a sealing face adjacent the opening and normal to the direction of the opening; and a gate having a sealing face adapted to mate with the seat sealing face, the gate being movable toward and away from the seat sealing face to seal and open the vacuum valve opening. A continuous elastomeric seal extends around the vacuum valve opening between the gate sealing face and the seat sealing face of sufficient size such that when the gate is positioned to seal the vacuum valve opening, there exists a gap between the gate sealing face and the seat sealing face. A purge gas port system, disposed in the seat or in the gate, has an inlet for a purge gas, an essentially continuous outlet extending around the vacuum valve opening and adjacent the elastomeric seal and gap, and a manifold system connecting the inlet and the outlet.

Abstract: A method of manufacturing a light emitting device of upward emission type and a thin film forming apparatus used in the method are provided. A plurality of film forming chambers are connected to a first transferring chamber. The plural film forming chambers include a metal material evaporation chamber, an EL layer forming chamber, a sputtering chamber, a CVD chamber, and a sealing chamber. By using this thin film forming apparatus, an upward emission type EL element can be fabricated without exposing the element to the outside air. As a result, a highly reliable light emitting device is obtained.

Abstract: A method and system for vapor deposition on a substrate that disposes a substrate in a process space of a processing system that is isolated from a transfer space of the processing system, processes the substrate at either of a first position or a second position in the process space while maintaining isolation from the transfer space, and deposits a material on said substrate at either the first position or the second position. Furthermore, the system includes a high conductance exhaust apparatus configured to be coupled to the process space, whereby particle contamination of the substrate processed in the deposition system is minimized. The exhaust apparatus comprises a pumping system located above the substrate and an evacuation duct, wherein the evacuation duct has an inlet located below the substrate plane.

Abstract: Apparatus for metering and vaporizing a particulate material, includes: a metering device for metering particulate material having: a reservoir for receiving particulate material; a housing having first and second openings; a rotatable shaft disposed in the internal volume, the shaft having a smooth surface and a circumferential groove; a rotating agitator with a plurality of tines disposed in the reservoir and cooperating with the rotating shaft for fluidizing particulate material and transporting it from the reservoir into the groove; cooperating such that particulate material is transported by the groove; a scraper cooperates with the groove to dislodge particulate material retained therein, and deliver metered amounts of particulate material through the second opening; a structure fluidizes the particulate material at the second opening; and a flash evaporator that receives and flash vaporizes the metered particulate material.

Abstract: A processing apparatus includes an openable/closable lid disposed on a process container, and an opening/closing mechanism configured to open/close the lid. The opening/closing mechanism includes a hinge structure swingably coupling the lid to one end of the process container, and a drive structure configured to swing the lid. The hinge structure includes a main shaft used as a rotation axis when the lid is swung by the drive structure, and an adjusting shaft located on a distal end side relative to the main shaft, for adjusting an angle of the lid.

Abstract: Heat treatment equipment and a method of driving the same are provided. The heat treatment equipment includes: a process tube having an aperture at one side thereof; a sealing unit for opening or closing the aperture; and a pressure sensor for measuring sealing pressure between the sealing unit and the one side of the process tube. In the heat treatment equipment, the aperture of the process tube can be sealed according to the sealing pressure of the sealing unit so that the process tube can be precisely sealed.

Abstract: A seal-protected perimeter partition valve apparatus (450) defines a vacuum and pressure sealed space (401) within a larger space (540) confining a substrate processing chamber with optimized geometry, minimized footprint and 360° substrate accessibility. A compact perimeter partitioned assembly (520) with seal protected perimeter partition valve (450) and internally contained substrate placement member (480) further provides processing system modularity and substantially minimized system footprint.

Abstract: An object of the present invention is to provide a method for repairing a display device according to which a wide variety of regions can be repaired in various ways using various materials, as well as an apparatus for the same. The present invention provides a repairing apparatus for repairing a pattern defect on a surface of a substrate in a display device where an electronic circuit pattern having the above described pattern defect is formed, characterized by having a plasma irradiation means for repairing the above described pattern defect through local irradiation of a region including the above described pattern defect with plasma.

Abstract: A vacuum processing apparatus that includes an inner wall member disposed inside of an outer side wall member of a vacuum container, the inner wall member surrounding a side of a sample stand on which a sample to be processed is placed and facing to a plasma generated in a chamber inside of the inner wall member. The apparatus also includes an upper member arranged in the vacuum chamber above a flange portion of the inner wall member, contacting with an upper surface of the flange portion and transmitting a force pressing downwardly in a state where the inside of the vacuum container is reduced in pressure. The inner wall member is thermally connected with a temperature adjusting device which controls a temperature of the inner wall member through the upper surface of the flange portion and the upper member.

Abstract: A thermal processing apparatus according to the present invention comprises a processing container having an opening part at a lower end thereof. The processing container can contain an object to be processed therein. The opening part can be opened and closed by a lid. A flange is provided at a periphery of the opening part. A gas-introducing part for introducing a gas into the processing container is provided in the flange. The object to be processed contained in the processing container is heated by a heating mechanism.

Abstract: When a quartz part is placed on a floor, the inside of a furnace is not polluted by contaminants attached from the floor to a seal surface of the quartz part and entering the inside of the furnace. A substrate processing apparatus includes a reaction tube, a first joining surface, a second joining surface, and a third joining surface. The reaction tube includes a quartz inner tube and a quartz outer tube. The first joining surface is configured to air-tightly join the outer tube and a quartz manifold. The second joining surface is configured to air-tightly join the manifold and a quartz seal cover. The third joining surface is configured to air-tightly join the seal cover and a seal cap. An O-ring is installed at least one of the first, second, and third joining surfaces, and a protrusion is installed outside the O-ring installed at the jointing surface.

Abstract: A method, computer readable medium, and system for treating a substrate in a process space of a vacuum processing system is described. A vacuum pump in fluid communication with the vacuum processing system and configured to evacuate the process space, while a process material supply system is pneumatically coupled to the vacuum processing system and configured to supply a process gas to the process space. Additionally, the vacuum pump is pneumatically coupled to the process supply system and configured to, at times, evacuate the process gas supply system.

Abstract: Apparatus and methods for heating a substrate in a pressurized environment inside of a thermal processing system. The substrate is placed in a gaseous environment inside a processing chamber of the thermal processing system. The substrate is supported in the gaseous environment. The gas pressure inside the processing chamber is increased above atmospheric pressure, which increases the temperature of the gaseous environment. Heat is transferred from the pressurized gaseous environment to the substrate for thermally processing a layer on the substrate.

Abstract: Improved apparatus and method for SMFD ALD include a method designed to enhance chemical utilization as well as an apparatus that implements lower conductance out of SMFD-ALD process chamber while maintaining full compatibility with standard wafer transport. Improved SMFD source apparatuses (700, 700?, 700?) and methods from volatile and non-volatile liquid and solid precursors are disclosed, e.g., a method for substantially controlling the vapor pressure of a chemical source (722) within a source space comprising: sensing the accumulation of the chemical on a sensing surface (711); and controlling the temperature of the chemical source depending on said sensed accumulation.

Abstract: Provided are a semiconductor layer manufacturing method and a semiconductor manufacturing apparatus capable of forming a high quality semiconductor layer even by a single chamber system, with a shortened process time required for reducing a concentration of impurities that exist in a reaction chamber before forming the semiconductor layer. A semiconductor device manufactured using such a method and apparatus is also provided.

Abstract: A plasma enhanced atomic layer deposition (PEALD) system includes a first chamber component coupled to a second chamber component to provide a processing chamber defining an isolated processing space within the processing chamber. A substrate holder is provided within the processing chamber and configured to support a substrate, a first process material supply system is configured to supply a first process material to the processing chamber and a second process material supply system is configured to supply a second process material to the processing chamber. A power source is configured to couple electromagnetic power to the processing chamber, and a sealing assembly interposed between the first and second chamber components.

Abstract: A processing system and method for chemical oxide removal, wherein the processing system includes a process chamber having a lower chamber portion configured to chemically treat a substrate and an upper chamber portion configured to thermally treat the substrate, and a substrate lifting assembly configured to transport the substrate between the lower chamber portion and the upper chamber portion. The lower chamber portion includes a chemical treatment environment that provides a temperature controlled substrate holder for supporting the substrate for chemical treatment. The substrate is exposed to a gaseous chemistry, such as HF/NH3, under controlled conditions including surface temperature and gas pressure. The upper chamber portion includes a thermal treatment environment that provides a heating assembly configured to elevate the temperature of the substrate.

Abstract: Stress within a suspension wall for suspending a showerhead in a process chamber is ameliorated by one or more of: (1) A gas sealing skirt that helps protect the suspension wall from direct contact with process gas. The gas sealing skirt is connected to either the chamber wall or the showerhead but is not connected to both. (2) Openings in the suspension wall that reduce exposure of the suspension wall to process gas or ambient atmosphere when the chamber lid is opened. (3) A substantially vertical arrangement of one or more rifts in the suspension wall which facilitate horizontal buckling or flexing of the suspension wall. (4) A plurality of suspension walls whose respective central portions are coplanar.

Abstract: An apparatus and a corresponding process for producing an organic EL display device comprising a first unit for carrying a supporting substrate in, a second unit for heating at least the supporting substrate before forming an organic luminescence medium, thereby performing a dehydration treatment, a third unit for forming the organic luminescence medium and an upper element, and a fourth unit for sealing the periphery of the apparatus with a sealing member, wherein the first unit is arranged between the second unit and the third unit, a first carrying device is set up in the first unit, and a second carrying device is arranged between the third unit and the fourth unit.

Abstract: A gate valve (20) for a semiconductor processing system includes a housing (21) forming a plurality of passages (22A to 22D) arrayed in a first direction. The passages respectively have ports (23A to 23D) facing a first predetermined side in a second direction perpendicular to the first direction. The ports are respectively provided with valve seats (25A to 25D) at gradually set back positions in the second direction, as being closer to a second predetermined side in the first direction. Valve plates (24A to 24D) are arrayed in the second direction to open/close the ports. The valve plates are slid by an actuating mechanism (30A to 30D).