Abstract: A gas collector for collecting gasses from within a reaction chamber of a reactor comprises a body having a conduit, at least one inlet, an outlet, and a seal disposed on the body. The seal cooperates with a lid of the reactor to prevent escape of reaction gasses from the reaction chamber. The body includes first and second members and is formed from graphite. The seal is formed from molybdenum and is ring-shaped with a generally crescent-shaped cross-section and inner and outer edges. A top surface of the body includes a pair of concentric slots into which the inner and outer edges are respectively positioned. The first and second members can be detachably connected to one another, and the first and second members can be stationary relative to one another during operation of the gas collector.

Abstract: A substrate processing apparatus and a method for manufacturing a semiconductor device can resolve the problems that semiconductor film by-products are incorporated into a boat rotation mechanism so as to allow the mechanism portion to be locked, whereby a high quality semiconductor film can be generated with stability for a long period of time.

Abstract: A vertical type chemical vapor deposition apparatus includes a process chamber having a cylindrical inner tube and a cap shaped outer tube surrounding and apart from the inner tube. A manifold is coupled with lower portions of the inner and outer tubes, and has a lower portion tapered at an inclination angle. A heater is provided at an outer side of the outer tube for heating the process chamber. A boat is movable into and out of the process chamber through the manifold, as driven by an elevator. The boat is vertically loaded with wafers. A cap is fixed to the elevator at a lower portion of the boat, and has a portion contactable with the manifold that is tapered at a same inclination angle as the lower portion of the manifold. An O-ring is inserted into the portion of the cap contactable with the manifold.

Abstract: A chamber for chemical vapor deposition has an inner quartz tube encompassed by a shorter outer quartz tube in which each end of the inner quartz tube is encompassed by a first flange. The first flange has a groove encircling in the longitudinal direction of the inner quartz tube, in which in each instance a front of the inner quartz tube is positioned. Between the first flange and the outside of the inner quartz tube, a seal is disposed. On the first flange in the direction toward the tube center, a second flange is disposed which has an encircling rim for fixing the front side of the shorter outer quartz tube and which is in contact on the outside of the inner quartz tube as well as on the outside of the shorter outer quartz tube. Between the second flange and the outside of the shorter outer quartz tube, a seal is disposed.

Abstract: A high pressure processing chamber for processing multiple semiconductor substrates comprises a chamber housing, a cassette, and a chamber closure. The cassette is removably coupled to the chamber housing. The cassette is configured to accommodate at least two semiconductor substrates. The chamber closure is coupled to the chamber housing. The chamber closure is configured such that in operation the chamber closure seals with the chamber housing to provide an enclosure for high pressure processing of the semiconductor substrates.

Abstract: An arrangement for improved thermal and/or electrical coupling between parts disposed in electronic device processing equipment is provided. In an illustrated embodiment, an improved coupling between a chamber liner and a chamber wall is provided which can be utilized in semiconductor processing equipment. The arrangement includes a compressible coupling or gasket which is compressed between a wedge ring and the chamber wall. The chamber liner is coupled to the wedge ring, so that the chamber liner is coupled to the chamber wall by way of the wedge ring and compressible coupling.

Abstract: The present invention provides such an improved metallic surface for sealable mating to a seal device such as a gasket. In one embodiment, it provides a sealable apparatus that has a component and a seal device. The component has a seal contact area for receiving the seal device. The seal contact area comprises a metallic surface with randomly distributed micro-pits that are capable of sealably mating with the seal device when the seal contact area is operably mated to the seal device.

Abstract: A process chamber window assembly is described. The process chamber window has an opening in a chamber body, a quartz window plane located on the opening and sealed with a O-ring and a buffer pad with an opening having the same shape as the quartz window pane located thereon. The window also has a view port located in the buffer pad and a fixed frame located on the view port. Screws through a plurality of screw holes in the fixed frame, the view port, the buffer pad and the chamber body fasten the window assembly to the chamber body.

Abstract: A substrate processing chamber has a substrate support, a gas supply, a gas exhaust, a gas energizer, and a wall about the substrate support, the wall having a porous ceramic material at least partially infiltrated with a fluorinated polymer, whereby a substrate on the substrate support may be processed by gas introduced by the gas supply, energized by the gas energizer, and exhausted by the gas exhaust.

Abstract: A vacuum valve assembly for use in a vacuum processing chamber includes a seat defining an opening in the vacuum valve, with the seat having a sealing face adjacent the opening and normal to the direction of the opening; and a gate having a sealing face adapted to mate with the seat sealing face, the gate being movable toward and away from the seat sealing face to seal and open the vacuum valve opening. A continuous elastomeric seal extends around the vacuum valve opening between the gate sealing face and the seat sealing face of sufficient size such that when the gate is positioned to seal the vacuum valve opening, there exists a gap between the gate sealing face and the seat sealing face. A purge gas port system, disposed in the seat or in the gate, has an inlet for a purge gas, an essentially continuous outlet extending around the vacuum valve opening and adjacent the elastomeric seal and gap, and a manifold system connecting the inlet and the outlet.

Abstract: A gas collector for collecting gasses from within a reaction chamber of a reactor comprises a rigid body having a conduit, inlets, an outlet, and a seal disposed on the body. The seal cooperates with a lid of the reactor to prevent escape of reaction gasses from the reaction chamber. The inlets direct the gasses from the reaction chamber into the conduit, and the outlet exhausts the gasses from the conduit. The body includes a first member and a second member with the seal disposed on the second member. The body can include inter-member seals for reducing the flow of the gasses across an interface between the first member and the second member. The inter-member seals disposed between the first member and the second member and allow movement of the first member relative to the second member. The body can also be formed from graphite and can also shape the flow of gasses into the reaction chamber to prevent the formation of standing eddy currents adjacent the gas collector.

Abstract: A resistance heating element 33 for heating a wafer W is embedded within a ceramic heater 22 that forms a susceptor for a semiconductor wafer W to be processed, and power lines 35 from the resistance heating element 33 extend out of the processing chamber 20. A sheathing bellows 38 that houses the power lines 35 in an insulated state is interposed between the ceramic heater 22 and a base plate 24 of the processing chamber 20, and an end piece 39 of the sheathing bellows 38 is connected by screws 40 to the ceramic heater 22 to provide a space 50 therebetween. The screws 40 are such as to permit the thermal expansion of the sheathing bellows 38. This configuration makes it possible to make the temperature distribution in the surface of the semiconductor wafer uniform and thus improve the uniformity of film formation, and also prevent corrosion of components such as the power lines and terminals, and suppress the generation of particles.

Abstract: A gas collector for collecting gasses from within a reaction chamber of a reactor comprises a body having a conduit, at least one inlet, an outlet, and a seal disposed on the body. The seal cooperates with a lid of the reactor to prevent escape of reaction gasses from the reaction chamber. The inlets direct the gasses from the reaction chamber into the conduit, and the outlet exhausts the gasses from the conduit. The gas collector includes means for providing an even flow of gasses through the reaction chamber. The body includes a first member and a second member with the seal disposed on the second member. The body can include inter-member seals for reducing the flow of the gasses across an interface between the first member and the second member. The inter-member seals disposed between the first member and the second member and allow movement of the first member relative to the second member. The body can also be formed from graphite.

Abstract: A single-substrate-processing apparatus includes an airtight process chamber in which a ceramic worktable is supported by a ceramic pedestal. The bottom of the pedestal is provided with a flange, which is attached to the bottom of the process chamber by a flange holder. The flange holder has upper and lower frames sandwiching the flange therebetween. The flange holder is detachably fixed by fixing bolts to the bottom of the process chamber from outside the process chamber.

Abstract: In a substrate vacuum processing chamber, a second inner slit passage door apparatus and method to supplement the normal slit valve and its door at the outside of the chamber. The inner slit passage door, blocks the slit passage at or adjacent the substrate processing location in a vacuum processing chamber to prevent process byproducts from depositing on the inner surfaces of the slit passage beyond the slit passage door and improves the uniformity of plasma in the processing chamber by eliminating a large cavity adjacent to the substrate processing location into which the plasma would otherwise expand.

Abstract: A method and an apparatus for producing a thin film on a substrate. A substrate is placed in a reaction space and is subjected to alternately repeated surface reactions with at least two different reactants. The reactants are fed in the vapor phase repeatedly and alternately into the reaction space through tree-like piping having a plurality of channels and nozzle orifices, where the nozzle orifices are arranged in a plane perpendicular to the plane of the substrate. The apparatus includes a reaction chamber in which the substrate is placed, inflow piping having a plurality of channels and nozzle orifices, and outlet passages for removing the reaction products and excess reactants. The inflow piping has a tree-like shape and is contained in a plurality of interconnected plates. The nozzle orifices are arranged in an essentially planar fashion in a plane essentially perpendicular to the plane of the substrate.

Abstract: A metallization module for applying a metal layer on the screen of a CRT faceplate panel is described. The metallization module comprises a vacuum chamber having sidewalls, a base, an adaptor plate, and a lid. The adaptor plate is positioned between the lid and the sidewalls of the metallization module. Evacuation of the vacuum chamber causes atmospheric pressure to act against the outside surface of the lid, forming an airtight seal between the lid, the adaptor plate, and the top lip of the sidewalls. A plurality adjustable rods in conjunction with the adaptor plate are used to support the faceplate panel within the metallization module.

Abstract: A vacuum chamber used for processing articles, such as integrated circuit wafers, display panels, and the like, has a small load lock chamber formed at an opening in a wall of the chamber by a moveable article supporting surface within the chamber and a cover outside of the chamber. The supporting surface and cover are sealed to the chamber wall when urged against it. Articles placed into the load lock chamber, when the cover is opened, are moved into the vacuum chamber for processing by moving the supporting surface away from the wall after the cover has been closed and a vacuum established in the load lock chamber. Articles are removed from the vacuum chamber in a reverse manner. Various mechanisms are describe for moving the articles, including a particular robotic device that simultaneously swaps the positions of two articles between the supporting surface and a processing location within the vacuum chamber by first pulling the articles together and then rotating them in a half-circle.

Abstract: A vacuum valve assembly for use in a vacuum processing chamber includes a seat defining an opening in the vacuum valve, with the seat having a sealing face adjacent the opening and normal to the direction of the opening; and a gate having a sealing face adapted to mate with the seat sealing face, the gate being movable toward and away from the seat sealing face to seal and open the vacuum valve opening. A continuous elastomeric seal extends around the vacuum valve opening between the gate sealing face and the seat sealing face of sufficient size such that when the gate is positioned to seal the vacuum valve opening, there exists a gap between the gate sealing face and the seat sealing face. A purge gas port system, disposed in the seat or in the gate, has an inlet for a purge gas, an essentially continuous outlet extending around the vacuum valve opening and adjacent the elastomeric seal and gap, and a manifold system connecting the inlet and the outlet.

Abstract: A valve includes a valve housing having a fluid conduit communicating between an inlet port and an outlet port, a valve closure member that is movable between a closed position and an open position, and a radiation-absorbing coating on at least a part of the fluid conduit. The radiation-absorbing coating may be disposed on inside surfaces of mounting flanges of the valve. The coating may be black chrome or a black anodized surface, for example.

Abstract: An improved exhaust conductance system for a CVD reactor includes two exhaust paths and a three-way valve controlling flow to the exhaust paths. The valve directs flow through a first exhaust conductance path when reactant gas passes through the reactor, and through a second exhaust conductance path after reactant gas has been purged from the chamber and only purging gas is flowing through the reactor.

Abstract: An apparatus for treating a wafer manufactured from semiconducting material, the apparatus comprising a first and a second housing part arranged for movement away front and towards each other, the two housing parts bounding a treatment chamber, while around the treatment chamber there is provided a first groove connected to gas discharge means, while in at least one of the two boundary surfaces there is provided a second groove connected to gas feed means, the first groove being located radially within the second groove, and, in use, the pressure created by the gas feed means being such that from the second groove, gas flows both in radial inward and in radial outward direction in the gap between the first and the second boundary surface.

Abstract: A manufacturing apparatus of a semiconductor device includes: a chamber having a sidewall; a window viewer of transparent material passing through the sidewall of the chamber; a window frame fixing the window viewer in the sidewall, the window frame having at least one opening; an image pickup device in the at least one opening, the image pickup device making image data showing a state of the chamber; and a logical operator connected to the image pickup device, the logical operator deciding whether the state of the chamber is normal or not by analyzing the image data.

Abstract: The present invention relates to an improved structure of the “showerhead used to introduce gaseous source material into a vapor deposition reactor such as a metal-organic chemical vapor deposition (MOCVD) reactor. The showerhead includes inlet seal assemblies that connect the inlet lines to the showerhead through the use of opposing planar seal faces so as to simplify the process of connecting and disconnecting the inlet lines to the showerhead. In addition, the showerhead includes a gas dispersion assembly on the inner face of the showerhead that optimizes the flow of gaseous material into the reaction chamber. The gas dispersion assembly includes a plurality of webbed disks that define discrete dispersion chambers. The webbed disks include integrally-formed flow diverters that direct the flow of gas into the dispersion chambers so as to create a controlled, uniform flow of material into the reaction chamber.

Abstract: An apparatus for fabricating a semiconductor device in which an O-ring can be protected from any thermal damage when used for sealing a reaction chamber or a quartz tube in a high temperature process, the apparatus comprising: a reaction chamber having an upper chamber with an upper flange and a lower chamber with a lower flange, the upper and lower flanges being coupled to define a reaction space sealed from the outer atmosphere; an O-ring inserted between the upper and lower flanges; a heater arranged within the reaction chamber; a water pipe provided within the lower flange; a metal seal provided to the upper surface of the lower flange of the reaction chamber; and a cooling flange provided with a water pipe adapted for cooling water to flow through the water pipe, the cooling flange being coupled with the upper flange of the reaction chamber so that the metal seal can be pressed onto the upper surface of the upper flange of the reaction chamber.

Abstract: An inner wall protection member used to protect the inner wall of a chamber of a plasma treatment apparatus which can be used stably for a long period of time by specifying properties of glass-like carbon materials, and a plasma treatment apparatus provided with the protection member. The hollow protection member for protecting the inner wall of a plasma processing chamber is integrally formed of glass-like carbon materials with a volume resistivity of 1×10−2 &OHgr;·cm or less and a thermal conductivity of 5W/m·K or more The protection member preferably has a thickness of 4 mm or more and the average surface roughness (Ra) of the inside of the hollow structure is preferably 2.0 &mgr;m or less.

Abstract: The present invention provides such an improved metallic surface for sealable mating to a seal device such as a gasket. In one embodiment, it provides a sealable apparatus that has a component and a seal device. The component has a seal contact area for receiving the seal device. The seal contact area comprises a metallic surface with randomly distributed micro-pits that are capable of sealably mating with the seal device when the seal contact area is operably mated to the seal device.

Abstract: A substrate processing apparatus includes a process chamber, a sealed chamber arranged, a movable member disposed inside the sealed chamber, an extendable/contractible structure having a first and a second extendable/contractible member respectively disposed on both opposing sides of the movable member, and a driving mechanism, disposed in the extendable/contractible structure, for driving the movable member. The driving mechanism is isolated from an inner surface of the sealed chamber. The interiors of the first and the second extendable/contractible member communicate with an exterior of the sealed chamber.

Abstract: Multiple levels of interlocks are provided relative to gas flow for a chemical vapor deposition chamber. When a chamber lid used for normal processing is in place, no interlock is in effect. When a lid used during maintenance operations is in place, flow of toxic gas to the chamber is interlocked, but flow of purge gas is permitted. When no lid is in place, all gas flow to the chamber is interlocked. The interlock arrangement may be implemented with two switches, both of which are actuated when the lid for normal processing is in place, and only one of which is actuated by the lid for the maintenance process.

Abstract: A gas collector is disclosed for use with epitaxial reactors. The gas collector is in the form of a base and top portion that are interconnected by means of a sealing arrangement. The top portion is configured to cover the base and define a conduit therebetween. Inlets and outlets are provided to direct chemical vapors from a reaction chamber of the epitaxial reactor into the conduit and further into an exhaust pipe of the epitaxial reactor. The gas collector is capable of forming a hermetic seal with the lid of the reaction chamber in order to prevent escape of chemical vapors.

Abstract: The invention relates to seal means (I, TR) for sealing two substantially flat closing surfaces (9a,7a), respectively of two separable elements (9,7), for forming a boundary between a first space (101) and a second space (102), in order to prevent a first gas flow (&PHgr;1) propagating in the first space to exit through an interface (I) between said two closing surfaces disposed one opposite to the other for sealing, comprising the construction of a set of troughs (TR) in at least one of the closing surfaces (9), carried out throughout the length (L) of said boundary in the direction of said first flow, and comprising a counter-flow (&PHgr;2), propagating from the second space (102) through said troughs, which have construction parameters including a width (w), a depth (h) and a separating width (W), determined in combination with the height (H) of the interface (I) and said length (L) of the boundary, for preventing the first flow (&PHgr;1) to exit through the interface (I) along the troughs (TR) and along t

Abstract: The heat treatment apparatus has the reaction vessel and the holding tool contained in the reaction vessel for holding a plurality of objects to be processed. The lower end of the reaction vessel is closed by the cover and the insulating unit is installed between the cover and the holding tool. On the top of the insulating unit, the heating unit having a heating resistor composed of a carbon material of high-purity sealed in a quartz plate is installed. Heat insulators are installed under the heating unit. The insulating unit is fixed to the cover, and the revolving shaft for rotating the holding tool passes in the center of the insulating unit, and the electric feeding line member for feeding electric power to the heating unit is arranged outside of the insulating unit.

Abstract: An apparatus processing a substrate, comprising a plurality of lift pins causing the substrate to move up and down, a first lifting mechanism causing the plurality of lift pins to move up and down, a heating plate performing a heating process onto the substrate, having a plurality of holes causing the plurality of lift pins to protrude and sink there-through to a surface facing the substrate, a lid having an inside portion and a outside portion, being disposed above the heating plate so that the inside portion faces the heating plate, and capable of moving up and down, a second lifting mechanism causing the lid to move up and down, a first inert gas introducing mechanism introducing a first inert gas to the inside portion of the lid and a second inert gas introducing mechanism introducing a second inert gas onto the surface of the heating plate through the plurality of holes.

Abstract: In accordance with the present invention, an insulating sealing structure useful in physical vapor deposition apparatus is provided. The insulating sealing structure is capable of functioning under high vacuum and high temperature conditions. The apparatus is a three dimensional structure having a specifically defined range of electrical, chemical, mechanical and thermal properties enabling the structure to function adequately as an insulator which does not break down at voltages ranging between about 1,500 V and about 3,000 V, which provides a seal against a vacuum of at least about 10−6 Torr, and which can function at a continuous operating temperature of about 300° F. (148.9° C.) or greater.

Abstract: A plasma generator comprises an ICP chamber and a surface wave conducting device. The upper wall of the ICP chamber is a quartz plate, and an electrode inside the lower ICP chamber is coupled with a RF bias supply. The ICP chamber is used to produce a first plasma. The surface wave conducting device is located on the quartz plate. The surface wave conducting device can make a microwave become a standing microwave, then a second plasma excited by the standing microwave is produced in the upper ICP chamber. Then, the first plasma and the second plasma are mixed in the ICP chamber.

Abstract: In a hot plate for performing heat processing while an inert gas is supplied, a mounting table is provided with a groove and a lower end portion of a lid body can be inserted into the groove. The lid body is lowered in two steps by a lid body drive apparatus. The lid body forms a processing chamber between the lid body and the mounting table by the lowering of the first step, and the lower end portion of the lid body is inserted into the groove by the lowering of the second step, thereby reducing the processing chamber in capacity. Consequently, in a substrate processing apparatus which requires a supply of gas, it becomes possible to reduce the capacity of the processing chamber and to reduce the required amount of gas.

Abstract: Particulate contamination can occur in physical vapor deposition (PVD) systems when sputtered target material accumulates on the walls of the processing chamber and flakes off onto the workpiece. In a method for preparing a shield to reduce particulate contamination, sheet metal is formed to conform to the surfaces of the deposition chamber. The base metal is roughened, such as by sand blasting. A layer of coating material, whose coefficient of thermal expansion (CTE) is similar to that of the target material, is applied to the roughened base metal surface by a thermal spraying process. The surface of the coating is very rough, more than five times rougher than the underlying base metal texture. When the coating CTE and surface roughness are chosen carefully, shield performance can be optimized, resulting in longer processing times between shield replacements, reduced PVD chamber maintenance and less down time in these systems.

Abstract: A substrate processing apparatus comprises a heating process chamber in which a heating process is performed for a wafer, a load lock chamber, connected to the heating process chamber, for controlling at least oxygen concentration and pressure, a transferring arm transferring the wafer between the heating process chamber and the load lock chamber, and a gate valve shielding the heating process chamber from the load lock chamber. Thus, an insulation film with high quality can be formed. In addition, the wafer is temporarily placed in the load lock chamber adjacent to the heating process chamber without need to be transferred to another unit. Thus, the transferring time period for the wafer can be shortened. In addition, footprints can be decreased.

Abstract: A high pressure chamber comprises a chamber housing, a platen, and a mechanical drive mechanism. The chamber housing comprises a first sealing surface. The platen comprises a region for holding the semiconductor substrate and a second sealing surface. The mechanical drive mechanism couples the platen to the chamber housing. In operation, the mechanical drive mechanism separates the platen from the chamber housing for loading of the semiconductor substrate. In further operation, the mechanical drive mechanism causes the second sealing surface of the platen and the first sealing surface of the chamber housing to form a high pressure processing chamber around the semiconductor substrate.

Abstract: A resistance heating element 33 for heating a wafer W is embedded within a ceramic heater 22 that forms a susceptor for a semiconductor wafer W to be processed, and power lines 35 from the resistance heating element 33 extend out of the processing chamber 20. A sheathing bellows 38 that houses the power lines 35 in an insulated state is interposed between the ceramic heater 22 and a base plate 24 of the processing chamber 20, and an end piece 39 of the sheathing bellows 38 is connected by screws 40 to the ceramic heater 22 to provide a space 50 therebetween. The screws 40 are such as to permit the thermal expansion of the sheathing bellows 38. This configuration makes it possible to make the temperature distribution in the surface of the semiconductor wafer uniform and thus improve the uniformity of film formation, and also prevent corrosion of components such as the power lines and terminals, and suppress the generation of particles.

Abstract: A sealable door assembly including a frontplate which faces an opening to be sealed, a backplate operatively coupled to the frontplate, and at least one inflatable member located between the frontplate and the backplate. When inflated, the inflatable member moves the frontplate into sealing engagement with the opening. In one embodiment the inflatable member includes one or more vacuum grade bellows. A movable mechanism moves the door assembly to selectively occlude the opening. Once the door assembly occludes the opening, the inflatable member is inflated and expands forcing the frontplate in a direction normal to the opening, thereby sealing the opening. The door assembly may be mounted within a pocket formed in an outer wall of a transfer chamber, and a sealing plate may be employed to form a gas tight region within the pocket. The gas tight region may be pressurized to enhance the door's seal of the opening.

Abstract: An etching apparatus for manufacturing semiconductor devices which reduces contamination of the processing surface of a wafer by transporting a plurality of wafers stacked in a cassette with their processing surfaces facing down from the cassette supply chamber to one or more process chambers where the etching operation is performed on each wafer, one at a time. The apparatus has a load lock chamber for transferring the wafers stacked in the cassette from the cassette supply chamber, which is maintained under atmospheric conditions, to the process chamber, which is maintained under a strong vacuum. The process chamber has a cathode to which a wafer is clamped by a wafer holder with its processing surface facing down; the process chamber may also have a removable lower cover for easy repair and cleaning.

Abstract: The invention relates to a device, in particular for a laser-induced vacuum are discharge evaporator for depositing of multiple layers with a high level of purity and high deposition rates on large-area components. According to the invention, the material source for the coating material is in a source chamber which can be evacuated and can be separated in a vacuum-tight manner from the actual coating chamber in which the substrate to be coated is located. The evaporator can, in particular, be used for deposition of amorphous carbon layers which are hydrogen-free and superhard and/or which contain hydrogen, in conjunction with high-purity metal layers or for the reactive plasma-enhanced deposition of, for example, oxidic, carbide, nitride hard material layers of ceramic layers or a combination thereof. The corresponding plasma sources can be flange-mounted on any suitable coating chambers and, consequently, also combined with conventional coating processes, for example magnetron sputtering.

Abstract: Air lock for introducing and continuously passing a strip of a substrate into and through a vacuum chamber, including an enclosure containing at least three successive rollers in the direction of travel of the strip and between which a passage is made for the strip, the first and third rollers being located on one side of this passage, the second roller being located on the opposite side of this passage, an essentially airtight region being formed between the strip and the first and third rollers and connected to a vacuum pump, a component being provided for adjusting the pressure with which the strip rests on the rollers.

Abstract: A showerhead diffuser apparatus for a CVD process has a first channel region having first plural independent radially-concentric channels and individual gas supply ports from a first side of the apparatus to individual ones of the first channels, a second channel region having second plural independent radially-concentric channels and a pattern of diffusion passages from the second channels to a second side of the apparatus, and a transition region between the first channel region and the second channel region having at least one transition gas passage for communicating gas from each first channel in the first region to a corresponding second channel in the second region. The showerhead apparatus has a vacuum seal interface for mounting the showerhead apparatus to a CVD reactor chamber such that the first side and supply ports face away from the reactor chamber and the second side and the patterns of diffusion passages from the second channels open into the reactor chamber.

Abstract: Device for processing a container (30) using a low pressure plasma, of the type having at least one processing station (14) comprising a fixed cavity (32) connected to a vacuum source by way of a vacuum circuit (74) and of the type in which processing station (14) has a mobile cover (34) equipped with means (54) for supporting container (30) such that the introduction of the container into cavity (32) is assured by displacement of cover (34) with respect to cavity (32), characterized in that cover (34) has a connecting channel (64) which, when cover (34) is in closed position sealing cavity (32) places cavity (32) in connection with a fixed end (68) of vacuum circuit (74).

Abstract: A downstream plasma reactor system incorporating a plasma-resistant blocking member is presented. In an embodiment, the system preferably includes a sealing member and a plasma-resistant blocking member. The sealing member may be arranged between a plasma tube and an inlet conduit configured to be in gaseous communication with a reaction chamber. The blocking member preferably extends from a discharge opening of the plasma tube into the inlet conduit to inhibit plasma exiting the discharge opening from passing the blocking member to contact the sealing member. Being so configured, the downstream plasma reactor system may have an improved mean time between failure of the seal between the plasma tube and the inlet chamber without compromising seal effectiveness.

Abstract: A vacuum treatment system has an outer housing which defines a substantially cylindrical inner wall around an axis. At least two openings are provided for treating or conveying-through a respective workpiece arranged along at least one great circle of the cylindrical inner wall. One treatment, conveying or lock chamber respectively, is connected with the at least two openings. An inner housing defines a cylindrical outer wall and, together with the substantially cylindrical inner wall, forms a substantially cylindrical ring gap. A workpiece carrier carousel is rotationally drivable about the axis in the ring gap. A feed device comprising driving devices is movable in a radially driven manner on the inner housing and is aligned with the at least two openings. The driving devices act into the ring gap, and each of the driving devices has a separate drive.

Abstract: A plasma processing apparatus comprises a processing chamber having at least one opening for receiving field energy by inductive coupling, and at least one field energy source arranged to induce the field energy into the chamber via the corresponding opening. The field energy source comprises an inductor device associated with a magnetic core. The magnetic core forms a closure and gas seal for the corresponding opening.

Abstract: A processing chamber is provided which comprises an upper chamber having a stage, a lower chamber which is connectable to and separable from the upper chamber, and an exhaust path, wherein the exhaust path has a separator with an exhaust port which is connectable to and separable from a connector of an exhaust duct, and the separator is configured so as to be able to move together with the lower chamber.