Plasma Cleaning Patents (Class 134/1.1)
  • Patent number: 10847417
    Abstract: A method includes forming a first conductive feature and a second conductive feature adjacent the first conductive feature in a first dielectric layer, where the first dielectric layer includes a first dielectric material, and forming a dielectric feature in the first dielectric layer, where the dielectric feature contacts sidewalls of the first and the second conductive features and where the dielectric feature includes a second dielectric material different from the first dielectric material. The method further includes forming a second dielectric layer over the first dielectric layer, where the second dielectric layer includes a third dielectric material different from the second dielectric material, and forming a third conductive feature in the second dielectric layer, where the third conductive feature contacts a sidewall of the dielectric feature and either a top surface of the first conductive feature or a top surface of the second conductive feature.
    Type: Grant
    Filed: August 21, 2019
    Date of Patent: November 24, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Hsin-Chieh Yao, Chung-Ju Lee
  • Patent number: 10804073
    Abstract: An apparatus and method for a large-scale high-throughput quantitative characterization and three-dimensional reconstruction of a material structure. The apparatus having a glow discharge sputtering unit, a sample transfer device, a scanning electron microscope unit and a GPU computer workstation. The glow discharge sputtering unit can achieve large size (cm order), nearly flat and fast sample preparation, and controllable achieve layer-by-layer ablation preparation along the depth direction of the sample surface; rapid scanning electron microscopy (SEM) can achieve large-scale and high-throughput acquisition of sample characteristic maps. The sample transfer device is responsible for transferring the sample between the glow discharge sputtering source and the scanning electron microscope in an accurately positioning manner.
    Type: Grant
    Filed: October 30, 2019
    Date of Patent: October 13, 2020
    Assignee: THE NCS TESTING TECHNOLOGY CO., LTD.
    Inventors: Haizhou Wang, Xing Yu, Xuejing Shen, Yunhai Jia, Xiaojia Li, Yuhua Lu, Weihao Wan, Jianqiu Luo, Dongling Li, Lei Zhao
  • Patent number: 10744771
    Abstract: To manufacture a liquid ejection head, a film having a lower surface free energy than a surface free energy of a substrate is first formed on an inner face of a liquid supply port. Next, a dry film to be a flow path forming member is attached to cover the surface of the substrate, and then a member to be an ejection orifice forming member is provided on the surface of the dry film.
    Type: Grant
    Filed: August 30, 2018
    Date of Patent: August 18, 2020
    Assignee: CANON KABUSHIKI KAISHA
    Inventors: Keiji Matsumoto, Seiichiro Yaginuma, Koji Sasaki, Jun Yamamuro, Kunihito Uohashi, Ryotaro Murakami, Tomohiko Nakano, Shingo Nagata
  • Patent number: 10714320
    Abstract: A time period for cleaning performed to remove a deposit formed within a chamber main body can be reduced. A plasma processing method including the cleaning of an inside of the chamber main body of a plasma processing apparatus is provided. The method includes etching including a main etching of etching an etching target film of a processing target object placed on a stage in a low temperature by generating plasma of a processing gas containing a fluorocarbon gas and/or a hydrofluorocarbon gas; carrying-out the processing target object from a chamber; and cleaning the inside of the chamber main body by generating plasma of a cleaning gas in a state that a temperature of an electrostatic chuck is set to be high.
    Type: Grant
    Filed: January 22, 2018
    Date of Patent: July 14, 2020
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Jin Kudo, Taku Gohira
  • Patent number: 10697063
    Abstract: The present disclosure relates to a corner spoiler designed to decrease high deposition rates on corner regions of substrates by changing the gas flow. In one embodiment, a corner spoiler for a processing chamber includes an L-shaped body fabricated from a dielectric material, wherein the L-shaped body is configured to change plasma distribution at a corner of a substrate in the processing chamber. The L-shaped body includes a first and second leg, wherein the first and second legs meet at an inside corner of the L-shaped body. The length of the first or second leg is twice the distance defined between the first or second leg and the inside corner. In another embodiment, a shadow frame for a depositing chamber includes a rectangular shaped body having a rectangular opening therethrough, and one or more corner spoilers coupled to the rectangular shaped body at corners of the rectangular shaped body.
    Type: Grant
    Filed: January 30, 2015
    Date of Patent: June 30, 2020
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Lai Zhao, Gaku Furuta, Qunhua Wang, Robin L. Tiner, Beom Soo Park, Soo Young Choi, Sanjay D. Yadav
  • Patent number: 10688538
    Abstract: Implementations described herein generally relate to methods and apparatus for in-situ removal of unwanted deposition buildup from one or more interior surfaces of a semiconductor substrate-processing chamber. In one implementation, the method comprises forming a reactive fluorine species from a fluorine-containing cleaning gas mixture. The method further comprises delivering the reactive fluorine species into a processing volume of a substrate-processing chamber. The processing volume includes one or more aluminum-containing interior surfaces having unwanted deposits formed thereon. The method further comprises permitting the reactive fluorine species to react with the unwanted deposits and aluminum-containing interior surfaces of the substrate-processing chamber to form aluminum fluoride. The method further comprises exposing nitrogen-containing cleaning gas mixture to in-situ plasma to form reactive nitrogen species in the processing volume.
    Type: Grant
    Filed: July 19, 2017
    Date of Patent: June 23, 2020
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Vivek Bharat Shah, Anup Kumar Singh, Bhaskar Kumar, Ganesh Balasubramanian, Bok Hoen Kim
  • Patent number: 10672592
    Abstract: The present invention provides a Soft Plasma Cleaning (SPC) system (30, 130, 230) including a Guided Soft-Plasma Cleaning (G-SPC) (30). The SPC system is a non-thermal, low temperature process and operable at atmosphere pressure, in both air and liquid medium. In an embodiment, a feedstock gas (40) is supplied to provide a discharging fluid (50) in the cleaning chamber (34). A plasma guiding and amplifying component (52) guides and expands the discharging fluid to cover a large ablation area over the workpiece (32), thereby also suppressing ion and electron bombardment damage or etching. The plasma guiding and amplifying component (52) may be formed with dielectric plates or tubes (37, 56, 58), with each dielectric having an aperture (37a, 56a, 58a). The electric field and ion energy in the cleaning chamber can be additionally controlled via a floating electrode (160, 160a), so as to suppress plasma damage during SPC.
    Type: Grant
    Filed: January 22, 2016
    Date of Patent: June 2, 2020
    Inventor: Chia Sern Chan
  • Patent number: 10643854
    Abstract: Multilayered stacks having layers of silicon interleaved with layers of a dielectric, such as silicon dioxide, are plasma etched with non-corrosive process gas chemistries. Etching plasmas of fluorine source gases, such as SF6 and/or NF3 typically only suitable for dielectric layers, are energized by pulsed RF to achieve high aspect ratio etching of silicon/silicon dioxide bi-layers stacks without the addition of corrosive gases, such as HBr or Cl2. In embodiments, a mask open etch and the multi-layered stack etch are performed in a same plasma processing chamber enabling a single chamber, single recipe solution for patterning such multi-layered stacks. In embodiments, 3D NAND memory cells are fabricated with memory plug and/or word line separation etches employing a fluorine-based, pulsed-RF plasma etch.
    Type: Grant
    Filed: December 4, 2015
    Date of Patent: May 5, 2020
    Assignee: Applied Materials, Inc.
    Inventors: Daisuke Shimizu, Jong Mun Kim
  • Patent number: 10580616
    Abstract: An ion implantation system has an ion source configured form an ion beam and an angular energy filter (AEF) having an AEF region. A gas source passivates and/or etches a film residing on the AEF by a reaction of the film with a gas. The gas can be an oxidizing gas or a fluorine-containing gas. The gas source can selectively supply the gas to the AEF region concurrent with a formation of the ion beam. The AEF is heated to assist in the passivation and/or etching of the film by the gas. The heat can originate from the ion beam, and/or from an auxiliary heater associated with the AEF. A manifold distributor can be operably coupled to the gas source and configured to supply the gas to one or more AEF electrodes.
    Type: Grant
    Filed: October 5, 2018
    Date of Patent: March 3, 2020
    Assignee: Axcelis Technologies, Inc.
    Inventors: Teng-Chao David Tao, David Allen Kirkwood
  • Patent number: 10577688
    Abstract: A method for processing a substrate in a substrate processing system includes flowing reactant gases into a process chamber including a substrate and supplying a first power level sufficient to promote rearrangement of molecules adsorbed from the reactant gases onto a surface of the substrate. The first power level is supplied in a first predetermined period where the reactant gases are flowing into the process chamber and a second power level is not supplied to the process chamber. The method further includes waiting a second predetermined period subsequent to flowing the reactant gases and supplying the first power level and prior to supplying the second power level to the process chamber and, after the second predetermined period, performing plasma-enhanced, pulsed chemical vapor deposition of film on the substrate by supplying one or more precursors while supplying the second power level to the process chamber for a third predetermined period.
    Type: Grant
    Filed: August 3, 2017
    Date of Patent: March 3, 2020
    Assignee: LAM RESEARCH CORPORATION
    Inventors: Adrien LaVoie, Hu Kang, Karl Leeser
  • Patent number: 10544483
    Abstract: A method includes providing nanoparticles having a tin coating surrounding a metal nucleus, such as copper. The nucleus forms first and acts as a seed growing into nanoparticles with a tin coating and a nucleus. The nanoparticles are at least partially vaporized, thereby producing vaporized tin ions. An emission of extreme ultraviolet (EUV) radiation is generated from the vaporized tin ions.
    Type: Grant
    Filed: July 1, 2016
    Date of Patent: January 28, 2020
    Assignee: Lockheed Martin Corporation
    Inventors: Randall M. Stoltenberg, Alfred A. Zinn
  • Patent number: 10541171
    Abstract: A protective cover for an electrostatic chuck may include a conductive wafer and a plasma resistant ceramic layer on at least one surface of the conductive wafer. The plasma resistant ceramic layer covers a top surface of the conductive wafer, side walls of the conductive wafer and an outer perimeter of a bottom surface of the conductive wafer. Alternatively, a protective cover for an electrostatic chuck may include a plasma resistant bulk sintered ceramic wafer and a conductive layer on a portion of a bottom surface of the plasma resistant bulk sintered ceramic wafer, wherein a perimeter of the bottom surface is not covered. The protective layer may be used to protect an electrostatic chuck during a plasma cleaning process.
    Type: Grant
    Filed: December 13, 2017
    Date of Patent: January 21, 2020
    Assignee: APPLIED MATERIALS, INC.
    Inventor: Vijay D. Parkhe
  • Patent number: 10490390
    Abstract: A substrate processing device includes a housing connected to ground, a cathode stage that supports a substrate, an anode unit, and a gas feeding unit that feeds gas toward the first plate. The cathode stage is applied with voltage for generating plasma. The anode unit includes a first plate including first through holes and a second plate including second through holes that are larger than the first through holes. The second plate is located between the first plate and the cathode stage. The first plate produces a flow of the gas through the first through holes. The gas that has passed through the first through holes flows through the second through holes into an area between the second plate and the cathode stage. A distance between the first plate and the second plate is 10 mm or greater and 50 mm or less.
    Type: Grant
    Filed: June 8, 2016
    Date of Patent: November 26, 2019
    Assignee: ULVAC, INC.
    Inventors: Tetsushi Fujinaga, Atsuhito Ihori, Masahiro Matsumoto, Noriaki Tani, Harunori Iwai, Kenji Iwata, Yoshinao Sato
  • Patent number: 10474033
    Abstract: Embodiments described herein relate to methods and apparatus for performing immersion field guided post exposure bake processes. Embodiments of apparatus described herein include a chamber body defining a processing volume. A pedestal may be disposed within the processing volume and a first electrode may be coupled to the pedestal. A moveable stem may extend through the chamber body opposite the pedestal and a second electrode may be coupled to the moveable stem. In certain embodiments, a fluid containment ring may be coupled to the pedestal and a dielectric containment ring may be coupled to the second electrode.
    Type: Grant
    Filed: August 31, 2017
    Date of Patent: November 12, 2019
    Assignee: Applied Materials, Inc.
    Inventors: Viachslav Babayan, Douglas A. Buchberger, Jr., Qiwei Liang, Ludovic Godet, Srinivas D. Nemani, Daniel J. Woodruff, Randy Harris, Robert B. Moore
  • Patent number: 10446713
    Abstract: To remove the mask formed by nanoimprinting after dry etching. A mask is formed by nanoimprinting on a back surface of a substrate. Subsequently, dry etching is performed using chlorine gas. Dry etching is finished with the mask kept remaining. A deteriorated layer is formed on the surface of the remaining mask. The mask is irradiated with plasma generated using a mixture gas of nitrogen and oxygen. Thereby, the deteriorated layer formed on the surface of the mask is removed by evaporation. The mask is removed by dissolving in BHF (buffered hydrofluoric acid).
    Type: Grant
    Filed: September 24, 2018
    Date of Patent: October 15, 2019
    Assignee: TOYODA GOSEI CO., LTD.
    Inventor: Kimiyasu Ide
  • Patent number: 10446373
    Abstract: In an embodiment of the invention there is a cyclotronic actuator utilizing a high-voltage plasma driver connected to a first electrode. A second electrode is grounded and the two are isolated from each other by a dielectric plate. A magnet is positioned beneath the dielectric plate such that a coaxial dielectric barrier discharge plasma is formed outwardly between the first electrode across the dielectric plate. The magnet positioned beneath the dielectric plate introduces a magnetic field transverse to the plasma current path, such that the plasma discharge discharges radially and the local magnetic field is oriented vertically in a direction perpendicular to the dielectric plate to create a Lorentz Force, which forces the plasma discharge to move radially outwardly in a curved radial streamer mode pattern.
    Type: Grant
    Filed: April 18, 2019
    Date of Patent: October 15, 2019
    Assignee: CU Aerospace, LLC
    Inventors: Joseph W. Zimmerman, David L. Carroll, Phillip J. Ansell, Georgi Hristov
  • Patent number: 10410845
    Abstract: Embodiments include a plasma processing method for cleaning polymer byproducts from interior surfaces of the plasma chamber. In an embodiment the plasma process may include processing a workpiece in a plasma processing chamber. Thereafter, the method may include removing the workpiece from the processing chamber. After the workpiece is removed, embodiments may include cleaning the plasma processing chamber with a cleaning process that includes a high pressure cleaning process, a first low pressure cleaning process, and a second low pressure cleaning process, wherein the second low pressure cleaning process includes applying a pulsed bias.
    Type: Grant
    Filed: November 22, 2017
    Date of Patent: September 10, 2019
    Assignee: Applied Materials, Inc.
    Inventors: Kenny Linh Doan, Usama Dadu, Wonseok Lee, Daisuke Shimizu, Li Ling, Kevin Choi
  • Patent number: 10395915
    Abstract: Provided is a substrate treatment apparatus. The apparatus includes a chuck supporting a substrate and being rotatable, a container surrounding the chuck and collecting chemicals scattered due to rotations of the substrate, and a first spray nozzle spraying the chemicals to the substrate.
    Type: Grant
    Filed: February 26, 2014
    Date of Patent: August 27, 2019
    Assignee: Semes Co., Ltd.
    Inventors: Se Won Lee, Yong Hee Lee, Jae Yong Kim
  • Patent number: 10351954
    Abstract: A process for depositing a thin film material on a substrate is disclosed, comprising simultaneously directing a series of gas flows from the output face of a delivery head of a thin film deposition system toward the surface of a substrate, and wherein the series of gas flows comprises at least a first reactive gaseous material, an inert purge gas, and a second reactive gaseous material, wherein the first reactive gaseous material is capable of reacting with a substrate surface treated with the second reactive gaseous material, wherein one or more of the gas flows provides a pressure that at least contributes to the separation of the surface of the substrate from the face of the delivery head. A system capable of carrying out such a process is also disclosed.
    Type: Grant
    Filed: October 12, 2016
    Date of Patent: July 16, 2019
    Assignee: EASTMAN KODAK COMPANY
    Inventor: David H. Levy
  • Patent number: 10340125
    Abstract: A system and method for providing pulsed excited species from a remote plasma unit to a reaction chamber are disclosed. The system includes a pressure control device to control a pressure at the remote plasma unit as reactive species from the remote plasma unit are pulsed to the reaction chamber.
    Type: Grant
    Filed: September 22, 2016
    Date of Patent: July 2, 2019
    Assignee: ASM IP Holding B.V.
    Inventor: Jereld Lee Winkler
  • Patent number: 10332850
    Abstract: Provided herein is a method for producing hollow contact areas for insertion bonding, formed on a semiconductor substrate comprising a stack of one or more metallization layers on a surface of the substrate. Openings are etched in a dielectric layer by plasma etching, using a resist layer as a mask. The resist layer and plasma etch parameters are chosen to obtain openings with sloped sidewalls having a pre-defined slope, due to controlled formation of a polymer layer forming on the sidewalls of the resist hole and the hollow contact opening formed during etching. According to a preferred embodiment, metal deposited in the hollow contact areas and on top of the dielectric layer is planarized using chemical mechanical polishing, leading to mutually isolated contact areas. The disclosure is also related to components obtainable by the method and to a semiconductor package comprising such components.
    Type: Grant
    Filed: June 24, 2014
    Date of Patent: June 25, 2019
    Assignee: IMEC
    Inventors: Eric Beyne, Wenqi Zhang, Geraldine Jamieson, Bart Swinnen
  • Patent number: 10332724
    Abstract: In an embodiment of the invention there is a cyclotronic actuator. The actuator is defined by having a high-voltage plasma driver connected to a first electrode. The first electrode is surrounded by a dielectric material. A second electrode is grounded and placed away from the first electrode, such that a plasma arc is formed between the pair of electrodes when the high-voltage plasma driver is activated. A ring magnet surrounding the second electrode is configured to introduce a magnetic field locally to the plasma arc. The plasma arc will then discharge in a radial direction. The magnet creates a local magnetic field oriented vertically in a direction parallel to the axisymmetric orientation of the first and second electrodes to create a Lorentz Force. The force causes the plasma arc to move in a tangential direction and causes the plasma arc to discharge out in a circular pattern.
    Type: Grant
    Filed: March 16, 2018
    Date of Patent: June 25, 2019
    Assignee: CU Aerospace, LLC
    Inventors: Joseph W. Zimmerman, David L. Carroll, Phillip J. Ansell, Georgi Hristov
  • Patent number: 10325956
    Abstract: Some embodiments of the present disclosure relate to a method in which a functional layer is formed over an upper semiconductor surface of a semiconductor substrate, and a capping layer is formed over the functional layer. A first etchant is used to form a recess through the capping layer and through the functional layer. The recess has a first depth and exposes a portion of the semiconductor substrate there through. A protective layer is formed along a lower surface and inner sidewalls of the recess. A second etchant is used to remove the protective layer from the lower surface of the recess and to extend the recess below the upper semiconductor surface to a second depth to form a deep trench. To prevent etching of the functional layer, the protective layer remains in place along the inner sidewalls of the recess while the second etchant is used.
    Type: Grant
    Filed: May 10, 2017
    Date of Patent: June 18, 2019
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Cheng-Hsien Chou, Shih Pei Chou, Chih-Yu Lai, Sheng-Chau Chen, Chih-Ta Chen, Yeur-Luen Tu, Chia-Shiung Tsai
  • Patent number: 10290510
    Abstract: A plasma etching method is performed by forming a desired pattern of a mask into a film including a zirconium oxide film by plasma etching with plasma generated from a first gas. The first gas consists of at least one chloride-containing gas of the group of boron trichloride, tetrachloromethane, chloride and silicon tetrachloride, at least one hydrogen-containing gas of the group of hydrogen bromide, hydrogen and methane, and a noble gas. An underlying film of a silicon oxide film or an amorphous carbon film is provided underneath the zirconium oxide film, and an etching selectivity of the zirconium oxide film to the underlying film is greater than or equal to one.
    Type: Grant
    Filed: April 5, 2016
    Date of Patent: May 14, 2019
    Assignee: Tokyo Electron Limited
    Inventor: Shunichi Mikami
  • Patent number: 10290504
    Abstract: Embodiments described herein generally relate to a method and apparatus for plasma treating a process chamber. A substrate having a gate stack formed thereon may be placed in a process chamber, and hydrogen containing plasma may be used to treat the gate stack in order to cure the defects in the gate stack. As the result of hydrogen containing plasma treatment, the gate stack has lower leakage and improved reliability. To protect the process chamber from Hx+ ions and H* radicals generated by the hydrogen containing plasma, the process chamber may be treated with a plasma without the substrate placed therein and prior to the hydrogen containing plasma treatment. In addition, components of the process chamber that are made of a dielectric material may be coated with a ceramic coating including an yttrium containing oxide in order to protect the components from the plasma.
    Type: Grant
    Filed: November 27, 2017
    Date of Patent: May 14, 2019
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Wei Liu, Theresa Kramer Guarini, Huy Q. Nguyen, Malcolm Bevan, Houda Graoui, Philip A. Bottini, Bernard L. Hwang, Lara Hawrylchak, Rene George
  • Patent number: 10280512
    Abstract: In one embodiment, an apparatus to selectively deposit a carbon layer on substrate, comprising a plasma chamber to receive a flow of carbon-containing gas; a power source to generate a plasma containing the carbon-containing gas in the plasma chamber; an extraction plate to extract an ion beam from the plasma and direct the ion beam to the substrate, the ion beam comprising ions having trajectories forming a non-zero angle of incidence with respect to a perpendicular to a plane of the substrate, the extraction plate further configured to conduct a neutral species derived from the carbon-containing gas to the substrate; and a substrate stage facing the extraction plate and including a heater to heat the substrate to a first temperature, when the ion beam and carbon-containing species impinge on the substrate.
    Type: Grant
    Filed: July 27, 2015
    Date of Patent: May 7, 2019
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Alex Tsung-Liang Chen, Simon Ruffell
  • Patent number: 10276364
    Abstract: Implementations described herein generally relate to methods and apparatus for processing a substrate. More particularly, implementations described herein relate to methods and an apparatus for bevel etch processing. In one embodiment, a method of cleaning a bevel edge of a semiconductor substrate is provided. The method includes placing a substrate on a cover plate inside of a processing chamber, the substrate having a deposition layer, which includes a center, and a bevel edge. A mask is placed over the substrate. The edge ring is disposed around/under the substrate. The method also includes flowing a process gas mixture adjacent the bevel edge, and flowing a purge gas through a first hole, a second hole, and a third hole of the mask in the center of the substrate adjacent a top of the substrate.
    Type: Grant
    Filed: July 19, 2017
    Date of Patent: April 30, 2019
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Zonghui Su, Vinay Prabhakar, Abdul Aziz Khaja, Jeongmin Lee
  • Patent number: 10276398
    Abstract: Methods and apparatus for laterally etching unwanted material from the sidewalls of a recessed feature are described herein. In various embodiments, the method involves etching a portion of the sidewalls, depositing a protective film over a portion of the sidewalls, and cycling the etching and deposition operations until the unwanted material is removed from the entire depth of the recessed feature. Each etching and deposition operation may target a particular depth along the sidewalls of the feature. In some cases, the unwanted material is removed from the bottom of the feature up, and in other cases the unwanted material is removed from the top of the feature down. Some combination of these may also be used.
    Type: Grant
    Filed: August 2, 2017
    Date of Patent: April 30, 2019
    Assignee: Lam Research Corporation
    Inventors: Kwame Eason, Pilyeon Park, Mark Naoshi Kawaguchi, Seung-Ho Park, Hsiao-Wei Chang
  • Patent number: 10265742
    Abstract: Embodiments of the disclosure generally relate to methods of removing etch by-products from the plasma processing chamber using carbon monoxide or carbon dioxide. In one embodiment, a method for dry cleaning a processing chamber includes exposing a chamber component disposed within the processing chamber in absence of a substrate disposed therein to a first cleaning gas mixture comprising carbon monoxide or carbon dioxide, wherein a portion of the chamber component has a film layer or residues deposited thereon, and the film layer or residues comprises a refractory metal and/or a metal silicide.
    Type: Grant
    Filed: October 24, 2014
    Date of Patent: April 23, 2019
    Assignee: Applied Materials, Inc.
    Inventors: Kee Young Cho, Sang Wook Kim, Joo Won Han, Han Soo Cho
  • Patent number: 10236175
    Abstract: Disclosed is a liquid chemical for forming a water-repellent protecting film on a wafer. The liquid chemical is a liquid chemical containing a water-repellent-protecting-film-forming agent for forming the water-repellent protecting film, at the time of cleaning the wafer which has a finely uneven pattern at its surface and contains at least at a part of a surface of a recessed portion of the uneven pattern at least one kind of matter selected from the group consisting of titanium, titanium nitride, tungsten, aluminum, copper, tin, tantalum nitride, ruthenium and silicon, at least on the surface of the recessed portion. The liquid chemical is characterized in that the water-repellent-protecting-film-forming agent is a water-insoluble surfactant. The water-repellent protecting film formed with the liquid chemical is capable of preventing a pattern collapse of the wafer, in a cleaning step.
    Type: Grant
    Filed: September 14, 2016
    Date of Patent: March 19, 2019
    Assignee: Central Glass Company, Limited
    Inventors: Masanori Saito, Shinobu Arata, Takashi Saio, Soichi Kumon, Hidehisa Nanai, Yoshinori Akamatsu
  • Patent number: 10236442
    Abstract: Provided herein are methods of fabricating a magnetic memory device including forming magnetic tunnel junction patterns on a substrate, forming an interlayered insulating layer on the substrate to cover the magnetic tunnel junction patterns, forming a conductive layer on the interlayered insulating layer, patterning the conductive layer to form interconnection patterns electrically connected to the magnetic tunnel junction patterns, and performing a cleaning process on the interconnection patterns. The cleaning process is performed using a gas mixture of a first gas and a second gas. The first gas contains a hydrogen element (H), and the second gas contains a source gas different from that of the first gas.
    Type: Grant
    Filed: August 3, 2016
    Date of Patent: March 19, 2019
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jaehun Seo, Jong-Kyu Kim, Jung-Ik Oh, Inho Kim, Jongchul Park, Gwang-Hyun Baek, Hyun-woo Yang
  • Patent number: 10196738
    Abstract: Provided are a deposition process monitoring system capable of detecting an internal state of a chamber in a deposition process, and a method of controlling the deposition process and a method of fabricating a semiconductor device using the system.
    Type: Grant
    Filed: January 16, 2017
    Date of Patent: February 5, 2019
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Chang-yun Lee, Ju-hyun Lee, Kee-soo Park, Kyu-hee Han, Seung-hun Lee, Byung-chul Jeon
  • Patent number: 10194672
    Abstract: A method of treating a product or surface with a reactive gas, comprises producing the reactive gas by forming a high-voltage cold plasma (HVCP) from a working gas; transporting the reactive gas at least 5 cm away from the HVCP; followed by contacting the product or surface with the reactive gas. The HVCP does not contact the product or surface.
    Type: Grant
    Filed: October 23, 2015
    Date of Patent: February 5, 2019
    Assignee: Nanoguard Technologies, LLC
    Inventors: Kevin M. Keener, Mark A. Hochwalt
  • Patent number: 10192717
    Abstract: Embodiments of the present disclosure generally relate to methods for conditioning an interior wall surface of a remote plasma generator. In one embodiment, a method for processing a substrate is provided. The method includes exposing an interior wall surface of a remote plasma source to a conditioning gas that is in excited state to passivate the interior wall surface of the remote plasma source, wherein the remote plasma source is coupled through a conduit to a processing chamber in which a substrate is disposed, and the conditioning gas comprises an oxygen-containing gas, a nitrogen-containing gas, or a combination thereof. The method has been observed to be able to improve dissociation/recombination rate and plasma coupling efficiency in the processing chamber, and therefore provides repeatable and stable plasma source performance from wafer to wafer.
    Type: Grant
    Filed: April 23, 2015
    Date of Patent: January 29, 2019
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Abdul Aziz Khaja, Mohamad Ayoub, Jay D. Pinson, II, Juan Carlos Rocha-Alvarez
  • Patent number: 10191215
    Abstract: A waveguide fabrication method including the steps of providing a substrate including at least one waveguide recess structure and a stress release recess structure for receiving a waveguide material, and depositing the waveguide material onto the substrate and into both the waveguide recess structure and the stress release recess structure.
    Type: Grant
    Filed: May 4, 2016
    Date of Patent: January 29, 2019
    Assignee: ECOLE POLYTECHNIQUE FEDERALE DE LAUSANNE (EPFL)
    Inventors: Tobias Kippenberg, Martin Hubert Peter Pfeiffer, Arne Kordts
  • Patent number: 10176972
    Abstract: A plasma etching apparatus includes: a vacuum chamber; a rotatable electrostatic chuck table for holding a workpiece in the vacuum chamber; a nozzle for supplying a plasma etching gas to part of the workpiece held on the electrostatic chuck table; a nozzle oscillating unit for oscillating the nozzle in such a manner as to describe a horizontal arcuate locus between a region corresponding to the center of the electrostatic chuck table and a region corresponding to the outer periphery of the electrostatic chuck table; and a control unit that controls the rotation amount of the electrostatic chuck table and the position of the nozzle to thereby position the nozzle into a region corresponding to an arbitrary part of the workpiece held on the electrostatic chuck table.
    Type: Grant
    Filed: May 10, 2016
    Date of Patent: January 8, 2019
    Assignee: DISCO Corporation
    Inventors: Yoshio Watanabe, Siry Milan, Hiroyuki Takahashi, Takeshi Seki
  • Patent number: 10170284
    Abstract: A plasma processing method according to an aspect includes: preparing a plasma processing apparatus including: a chamber; a lower electrode; an upper electrode; a focus ring surrounding a peripheral edge of the lower electrode; and an annular coil disposed on an upper portion of the upper electrode at a more outer position than the peripheral edge of the lower electrode; placing a substrate on the lower electrode, with a peripheral edge of the substrate surrounded by the focus ring; introducing process gas into the chamber; generating plasma of the process gas by applying high-frequency power across the upper electrode and the lower electrode; and leveling an interface of a plasma sheath on an upper portion of the substrate with that on an upper portion of the focus ring by generating a magnetic field by supplying a current to the annular coil.
    Type: Grant
    Filed: September 14, 2016
    Date of Patent: January 1, 2019
    Assignees: TOKYO ELECTRON LIMITED, KABUSHIKI KAISHA TOSHIBA
    Inventors: Kenta Yasuda, Toru Kubota, Takashi Kondo, Katsuhiro Ishida
  • Patent number: 10144040
    Abstract: A plasma processing apparatus includes a slot plate of an antenna and the slot plate has slots arranged in a circumferential direction thereof with respect to an axis line. A microwave is introduced into a processing space from the antenna via a dielectric window, and a through hole is formed in the dielectric window along the axis line. A plasma processing method performed in the plasma processing apparatus includes performing a first cleaning process by radiating the microwave from the antenna and supplying a cleaning gas from a cleaning gas supply system; and performing a second cleaning process by radiating the microwave from the antenna and supplying the cleaning gas from the cleaning gas supply system. A first pressure of the processing space in the performing of the first cleaning process is set to be lower than a second pressure thereof in the performing of the second cleaning process.
    Type: Grant
    Filed: October 17, 2012
    Date of Patent: December 4, 2018
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Wataru Yoshikawa, Naoki Matsumoto
  • Patent number: 10147587
    Abstract: A system and method for a waferless cleaning method for a capacitive coupled plasma system. The method includes forming a protective layer on a top surface of an electrostatic chuck, volatilizing etch byproducts deposited on one or more inner surfaces of the plasma process chamber, removing volatilized etch byproducts from the plasma process chamber and removing the protective layer from the top surface of the electrostatic chuck. A capacitive coupled plasma system including a waferless cleaning recipe is also described.
    Type: Grant
    Filed: September 14, 2017
    Date of Patent: December 4, 2018
    Assignee: Lam Research Corporation
    Inventors: Shijian Li, David Carman, Chander Radhakrishnan
  • Patent number: 10134559
    Abstract: In one embodiment, a method of cleaning an electron source included in an electron gun for an electron beam writing apparatus includes supplying an inert gas to an electron gun chamber, allowing the electron source to emit electrons, ionizing the inert gas with the electrons to produce ions, and removing contaminants deposited on the electron source by bombardment with the ions, and cutting off the supply of the inert gas based on a change in electron beam emission characteristic of the electron gun.
    Type: Grant
    Filed: July 15, 2016
    Date of Patent: November 20, 2018
    Assignee: NuFlare Technology, Inc.
    Inventor: Nobuo Miyamoto
  • Patent number: 10096462
    Abstract: A substrate processing method and apparatus for preventing evaporation of an anti-drying fluorine-containing organic solvent from a substrate during transportation of the substrate into a processing container and can prevent decomposition of a fluorine-containing organic solvent in the processing container. A substrate, the surface of which is covered with a first fluorine-containing organic solvent, is carried into a processing container. The first fluorine-containing organic solvent is removed from the substrate surface by forming a high-pressure fluid atmosphere of a mixture of the first fluorine-containing organic solvent and a second fluorine-containing organic solvent, having a lower boiling point than the first fluorine-containing organic solvent, in the processing container e.g. by supplying a high-pressure fluid of the second fluorine-containing organic solvent into the processing container.
    Type: Grant
    Filed: July 15, 2013
    Date of Patent: October 9, 2018
    Assignees: Toshiba Memory Corporation, Tokyo Electron Limited
    Inventors: Hidekazu Hayashi, Yohei Sato, Hisashi Okuchi, Hiroshi Tomita, Kazuyuki Mitsuoka, Gen You, Hiroki Ohno, Takehiko Orii, Takayuki Toshima
  • Patent number: 10083830
    Abstract: It was found out that when radicals generated by plasma are fed to a treatment chamber via a plurality of holes (111) formed on a partition plate which separates a plasma-forming chamber (108) from the treatment chamber, and the radicals are mixed with a treatment gas which is separately fed to the treatment chamber, the excitation energy of the radicals is suppressed and thereby the substrate surface treatment at high Si-selectivity becomes possible, which makes it possible to conduct the surface treatment of removing native oxide film and organic matter without deteriorating the flatness of the substrate surface. The radicals in the plasma are fed to the treatment chamber via radical-passing holes (111) of a plasma-confinement electrode plate (110) for plasma separation, the treatment gas is fed to the treatment chamber (121) to be mixed with the radicals in the treatment chamber, and then the substrate surface is cleaned by the mixed atmosphere of the radicals and the treatment gas.
    Type: Grant
    Filed: May 23, 2016
    Date of Patent: September 25, 2018
    Assignee: CANON ANELVA CORPORATION
    Inventors: Takuya Seino, Manabu Ikemoto, Kimiko Mashimo
  • Patent number: 10066293
    Abstract: A method of operating a filament assisted chemical vapor deposition (FACVD) system. The method includes depositing a film on a substrate in a reactor of the FACVD system. During the depositing, a DC power is supplied to a heater assembly to thermally decompose a film forming material. The method also includes cleaning the heater assembly, or an interior surface of the reactor, or both. During the cleaning, an alternating current is supplied to the heater assembly to energize a cleaning media into a plasma.
    Type: Grant
    Filed: October 28, 2014
    Date of Patent: September 4, 2018
    Assignee: Tokyo Electron Limited
    Inventors: Jozef Brcka, Osayuki Akiyama
  • Patent number: 10056236
    Abstract: A plasma processing method for plasma-etching a sample in a metallic processing chamber includes etching the sample with a plasma; plasma-cleaning the processing chamber with a fluorine-containing gas after etching the sample; and plasma-processing the processing chamber with a gas containing sulfur and oxygen after plasma cleaning the processing chamber.
    Type: Grant
    Filed: February 27, 2017
    Date of Patent: August 21, 2018
    Assignee: HITACHI HIGH-TECHNOLOGIES CORPORATION
    Inventors: Hayato Watanabe, Masahito Mori, Takao Arase, Taku Iwase
  • Patent number: 10037870
    Abstract: A method of performing a surface treatment includes passivating a surface of an insulating part in a reaction chamber, and then performing a hydrogen plasma annealing treatment on a substrate in the reaction chamber. The passivation of the surface of the insulating part includes supplying a nitrogen-based gas into the reaction chamber and exciting the nitrogen-based gas in the reaction chamber using a plasma generator.
    Type: Grant
    Filed: September 8, 2016
    Date of Patent: July 31, 2018
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Sung-ho Kang, Ki-chul Kim, Yong-hun Lee, Pyung Moon, Sun-young Lee, Un-ki Kim
  • Patent number: 10030304
    Abstract: An ion implantation apparatus in which a fluorine compound gas is used as a source gas of an ion source, includes a vacuum chamber into which the source gas is introduced; an introduction passage connected to the vacuum chamber and configured to introduce into the vacuum chamber a cleaning gas containing a component that reacts with the fluorine compound deposited inside the vacuum chamber so as to generate a reactant gas; a delivery device configured to forcibly introduce the cleaning gas into the introduction passage; a first adjustment device configured to adjust an amount of gas flow in the introduction passage; an exhausting passage connected to the vacuum chamber and configured to forcibly exhaust the reactant gas along with the cleaning gas; and a second adjustment device configured to adjust an amount of gas flow in the exhausting passage.
    Type: Grant
    Filed: March 19, 2014
    Date of Patent: July 24, 2018
    Assignee: SUMITOMO HEAVY INDUSTRIES ION TECHNOLOGY CO., LTD.
    Inventors: Takayuki Nagai, Masateru Sato
  • Patent number: 10034362
    Abstract: The present disclosure is directed to plasma-based light sources. Systems and methods are described for protecting components of the light source from plasma generated debris which can include target material gas, atomic vapor, high energy ions, neutrals, micro-particles, and contaminants. Particular embodiments include arrangements for reducing the adverse effects of plasma generated ions and neutrals on light source components while simultaneously reducing in-band light attenuation due to target material gas and vapor.
    Type: Grant
    Filed: August 28, 2015
    Date of Patent: July 24, 2018
    Assignee: KLA-Tencor Corporation
    Inventors: Alexey Kuritsyn, Alexander Bykanov, Michael Kanouff, Oleg Khodykin
  • Patent number: 10026597
    Abstract: The present disclosure provides methods for cleaning chamber components post substrate etching. In one example, a method for cleaning includes activating an etching gas mixture using a plasma to create an activated etching gas mixture, the etching gas mixture comprising hydrogen-containing precursor and a fluorine-containing precursor and delivering the activated etching gas mixture to a processing region of a process chamber, the process chamber having an edge ring positioned therein, the edge ring comprising a catalyst and anticatalytic material, wherein the activated gas removes the anticatalytic material from the edge ring.
    Type: Grant
    Filed: January 3, 2017
    Date of Patent: July 17, 2018
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Chirantha Rodrigo, Jingchun Zhang, Lili Ji, Anchuan Wang, Nitin K. Ingle
  • Patent number: 10002745
    Abstract: Embodiments of the disclosure include methods for in-situ chamber cleaning efficiency enhancement process for a plasma processing chamber utilized for a semiconductor substrate fabrication process. In one embodiment, a method for performing a plasma treatment process after cleaning a plasma process includes performing a cleaning process in a plasma processing chamber in absent of a substrate disposed thereon, subsequently supplying a plasma treatment gas mixture including at least a hydrogen containing gas and/or an oxygen containing gas into the plasma processing chamber, applying a RF source power to the processing chamber to form a plasma from the plasma treatment gas mixture, and plasma treating an interior surface of the processing chamber.
    Type: Grant
    Filed: May 3, 2016
    Date of Patent: June 19, 2018
    Assignee: Applied Materials, Inc.
    Inventors: Lin Zhang, Xuesong Lu, Andrew V. Le, Jang Seok Oh, Xinhai Han
  • Patent number: 9984855
    Abstract: An ion implantation system for improving performance and extending lifetime of an ion source is disclosed. A fluorine-containing dopant gas source is introduced into the ion chamber along with one or more co-gases. The one or more co-gases can include hydrogen or krypton. The co-gases mitigate the effects caused by free fluorine ions in the ion source chamber which lead to ion source failure.
    Type: Grant
    Filed: November 17, 2010
    Date of Patent: May 29, 2018
    Assignee: Axcelis Technologies, Inc.
    Inventors: Neil K. Colvin, Tseh-Jen Hsieh