Abstract: A substrate processing method includes a processing liquid supplying step of supplying a processing liquid to a patterned surface of a substrate having the patterned surface with projections and recesses, a processing film forming step of solidifying or curing the processing liquid supplied to the patterned surface to form, so as to follow the projections and the recesses of the patterned surface, a processing film which holds a removal object present on the patterned surface and a removing step of supplying a peeling liquid to the patterned surface to peel the processing film from the patterned surface together with the removal object, thereby removing the processing film from the substrate, while such a state is kept that the removal object is held by the processing film.

Abstract: Among other things, one or more systems and techniques for removing a photoresist from a semiconductor wafer are provided. The photoresist is formed over the semiconductor wafer for patterning or material deposition. Once completed, the photoresist is removed in a manner that mitigates damage to the semiconductor wafer or structures formed thereon. In an embodiment, trioxygen liquid is supplied to the photoresist. The trioxygen liquid is activated using an activator, such as an ultraviolet activator or a hydrogen peroxide activator, to create activated trioxygen liquid used to remove the photoresist. In an embodiment, the activation of the trioxygen liquid results in free radicals that aid in removing the photoresist. In an embodiment, an initial photoresist strip, such as using a sulfuric acid hydrogen peroxide mixture, is performed to remove a first portion of the photoresist, and the activated trioxygen liquid is used to remove a second portion of the photoresist.

Abstract: There is provided a method of cleaning a substrate processing apparatus in which a drying process of drying a substrate whose surface is wet with a liquid is performed by bring the substrate into contact with a supercritical fluid, the method including: diffusing a first cleaning fluid in an interior of the substrate processing apparatus, the first cleaning fluid being obtained by mixing the supercritical fluid with a solvent containing polar molecules and having a lower boiling point than a boiling point of the liquid; and discharging the first cleaning fluid from the interior of the substrate processing apparatus, that occurs after the diffusing the first cleaning fluid.

Abstract: A substrate treatment apparatus according to an embodiment includes a treatment tank to store a chemical solution to treat a substrate, a pipe having a discharge port through which an air bubble is discharged from a bottom of the treatment tank toward the substrate, and a rod body disposed between the discharge port and the substrate to divide the air bubble.

Abstract: A method for manufacturing an optical semiconductor device having a ridge stripe configuration containing an active layer and current blocking layers which embed both sides of the ridge stripe configuration, comprises steps of forming a mask of an insulating film on a surface of a semiconductor layer containing an active layer, forming a ridge stripe configuration by etching a semiconductor layer using gas containing SiCl4, removing an oxide layer with regard to a Si based residue which is attached on a surface which is etched of the ridge stripe configuration which is formed and removing a Si based residue whose oxide layer is removed.

Abstract: Embodiments described herein generally relate to a processing chamber incorporating a small thermal mass which enable efficient temperature cycling for supercritical drying processes. The chamber generally includes a body, a liner, and an insulation element which enables the liner to exhibit a small thermal mass relative to the body. The chamber is also configured with suitable apparatus for generating and/or maintaining supercritical fluid within a processing volume of the chamber.

Abstract: A substrate processing apparatus includes: a mixer that mixes a first phosphoric acid and an additive serving as raw materials of a processing liquid with each other at a predetermined mixing ratio, thereby preparing a mixed liquid; a mixing ratio corrector that corrects the mixing ratio of the raw materials of the processing liquid; a processing unit that processes a substrate with the processing liquid. The mixer includes a mixing tank that stores the mixed liquid, a first phosphoric acid supply that supplies the first phosphoric acid to the mixing tank, and an additive supply that supplies the additive to the mixing tank. The mixing ratio corrector includes a liquid line through which the mixed liquid is delivered from the mixer to the processing unit, and a second phosphoric acid supply connected to the liquid line so as to supply second phosphoric acid to the liquid line.

Abstract: A vibration cleaning device, method and system are provided. The vibration cleaning device includes a cleaning module configured to clean an object through a cleaning solution; a cleaning solution delivering module configured to deliver the cleaning solution to the object when the cleaning module performs a cleaning process on the object; a vibrating module configured to vibrate, move and drive the cleaning module to vibrate the object at a predetermined vibration frequency, so that the cleaning module performs vibration cleaning on the object through the cleaning solution; a cleaning tank configured to accommodate the object and the cleaning solution after cleaning the object; a transfer module configured to transfer the uncleaned object to the cleaning tank and transfer the cleaned object out of the cleaning tank; and a control module configured to control working states of the cleaning solution delivering module, the vibrating module and the transfer module.

Abstract: A laser welding by-product removal device comprises a housing that includes distal and proximate ends separated along a central axis by a peripheral sidewall. A first plenum circumscribes the peripheral sidewall at the proximate housing end and includes a gas inlet and a first plenum base surface that includes a plurality of gas outlet holes. A second plenum circumscribes the peripheral sidewall between the first plenum and the distal housing end, where the second plenum includes a second plenum base surface, radially inner and outer sidewalls that extend axially distal from the second plenum base surface. The second plenum includes a top surface extending between the radially inner and outer sidewalls, and a by-product outlet in the top surface, where at least one of the second plenum base surface and the radially outer sidewall includes a plurality of by-product inlet holes.

Abstract: A substrate processing method includes a processing liquid supplying step of supplying a processing liquid having a solute and a solvent to a front surface of a substrate, a processing film forming step of forming on the front surface of the substrate a processing film which holds a removal object present on the front surface of the substrate by solidifying or curing the processing liquid supplied to the front surface of the substrate, and a peeling step of peeling the processing film from the front surface of the substrate together with the removal object by supplying a peeling liquid to the front surface of the substrate, and the peeling step includes a penetrating hole forming step of forming a penetrating hole on the processing film by dissolving partially the processing film in the peeling liquid.

Abstract: According to one embodiment, a method for cleaning a substrate includes first cleaning process and second cleaning process. The first cleaning process subjects a substrate to a first cleaning method. The second cleaning process subjects the substrate to a second cleaning method that is different from the first cleaning method and is subsequent to the first cleaning process. The first cleaning method includes at least one of acidic cleaning or alkaline cleaning. The second cleaning method includes freeze cleaning.

Abstract: A method for reducing wiggling in a line includes forming a first patterning layer over a metal feature and depositing a first mask layer over the first patterning layer. The first mask layer is patterned to form a first set of one or more openings therein and then thinned. The pattern of the first mask layer is transferred to the first patterning layer to form a second set of one or more openings therein. The first patterning layer is etched to widen the second set of one or more openings. The first patterning layer may be comprised of silicon or an oxide material. The openings in the first patterning layer may be widened while a mask layer is over the first patterning layer.

Abstract: A thinner composition is capable of reducing the amount of photoresist used in a reducing resist consumption (RRC) coating process, an edge bead removed (EBR) process or the like, and removing unnecessary photoresist on an edge portion or a backside portion of the wafer. The thinner composition includes C1-C10 alkyl C1-C10 alkoxy propionate, propylene glycol C1-C10 alkyl ether, and propylene glycol C1-C10 alkyl ether acetate.

Abstract: A substrate processing method includes a processing liquid supplying step of supplying a processing liquid to a patterned surface of a substrate having the patterned surface with projections and recesses, a processing film forming step of solidifying or curing the processing liquid supplied to the patterned surface to form, so as to follow the projections and the recesses of the patterned surface, a processing film which holds a removal object present on the patterned surface and a removing step of supplying a peeling liquid to the patterned surface to peel the processing film from the patterned surface together with the removal object, thereby removing the processing film from the substrate, while such a state is kept that the removal object is held by the processing film.

Abstract: A method for manufacturing a photomask is provided. The method includes: receiving a substrate having a hard mask disposed thereover; forming a patterned photoresist over the hard mask; patterning the hard mask using the patterned photoresist as a mask; and removing the patterned photoresist. The removing of the patterned photoresist includes: oxidizing organic materials over the substrate; applying an alkaline solution onto the patterned photoresist; and removing the patterned photoresist by mechanical impact. A method for cleaning a substrate and a photomask are also provided.

Abstract: The present invention relates to a novel provided gallium arsenide substrates as well as the use thereof. The gallium arsenide substrates provided according to the invention exhibit a so far not obtained surface quality, in particular a homogeneity of surface properties, which is detectable by means of optical surface analyzers, by way of example by means of ellipsometric lateral substrate mapping for optical contact-free quantitative characterization.

Abstract: Some embodiments include methods of removing particles from over surfaces of semiconductor substrates. Liquid may be flowed across the surfaces and the particles. While the liquid is flowing, electrophoresis and/or electroosmosis may be utilized to enhance transport of the particles from the surfaces and into the liquid. In some embodiments, temperature, pH and/or ionic strength within the liquid may be altered to assist in the removal of the particles from over the surfaces of the substrates.

Abstract: A semiconductor on insulator type structure, which may be used for a front side type imager, successively comprises, from its rear side to its front side, a semiconductor support substrate, an electrically insulating layer and an active layer comprising a monocrystalline semiconductor material. The active layer is made of a semiconductor material having a state of mechanical stress with respect to the support substrate, and the support substrate comprises, on its rear side, a silicon oxide layer, the thickness of the oxide layer being chosen to compensate bow induced by the mechanical stress between the active layer and the support substrate during cooling of the structure after the formation by epitaxy of at least a part of the active layer on the support substrate.

Abstract: A method of manufacturing a semiconductor device from a semiconductor wafer in which a plurality of semiconductor chips are formed. The method includes a first process of forming an active region on a first main surface side of the semiconductor wafer and a second process of forming a first process control monitor (PCM) on a second main surface side of the semiconductor wafer. The method further includes before the second process, a third process of forming a second PCM on the first main surface side of the semiconductor wafer. The first PCM and the second PCM are formed at an area located at the same position in a plan view of the semiconductor wafer.

Abstract: A method of manufacturing a semiconductor device is disclosed. In the method, a metallic layer is formed over a substrate, the metallic layer is surface-treated with an alkaline solution, and a bottom anti-reflective coating (BARC) layer is formed on the surface-treated metallic layer.

Abstract: A chemical mechanical planarization (CMP) system including a capacitive deionization module (CDM) for removing ions from a solution and a method for using the same are disclosed. In an embodiment, an apparatus includes a planarization unit for planarizing a wafer; a cleaning unit for cleaning the wafer; a wafer transportation unit for transporting the wafer between the planarization unit and the cleaning unit; and a capacitive deionization module for removing ions from a solution used in at least one of the planarization unit or the cleaning unit.

Abstract: A novel aqueous solution for resist pattern coating. An aqueous solution for resist pattern coating, including: a copolymer as component A, the copolymer having an ethylene oxide unit and a C3 alkylene oxide unit in a main chain and having a hydroxy group at a terminal; a water-soluble polymer, a water-soluble monomer, or a water-soluble oligomer as component B, the water-soluble polymer being other than the copolymer as the component A; and a solvent as component C, the solvent containing water as a main component. The copolymer as the component A is for example a block copolymer of formula (1) below: HOR1OxR2OyR3OzH??(1) wherein R1, R2, and R3 are each independently an ethylene group, a propylene group, or a trimethylene group, and x, y, and z are each independently an integer of 5 to 100.

Abstract: There is provided a substrate processing method for performing an etching processing by immersing a substrate in a processing liquid containing a chemical liquid and silicon, the substrate processing method including: a preparation step of setting a supply flow rate of the chemical liquid based on a replenishment amount of the chemical liquid and a replenishment amount of the silicon; and a replenishment step of supplying the chemical liquid at the set supply flow rate of the chemical liquid and dissolving a set replenishment amount of the silicon in the processing liquid.

Abstract: The present invention relates to a composition for surface treatment including: a phosphonic acid compound containing two or more nitrogen atoms; and water, wherein the pH is 6 or less, and the composition for surface treatment is used for treating a surface of a polishing-completed object to be polished having a tungsten-containing layer. According to the present invention, there is provided a means capable of inhibiting dissolution of the tungsten-containing layer provided on a polishing-completed object to be polished when a surface treatment is performed.

Abstract: An isotropic plasma etch process for etching silicon oxide is provided. In an embodiment, a first step, a modification step, includes the use of a fluorocarbon based plasma. This modification step provides for the formation of an interface layer and the deposition of a fluorocarbon film on the surface of the silicon oxide. Then, a second step, a removal step includes the use of an oxygen (O2) based plasma. This removal step removes the fluorocarbon film and the interface layer. To promote isotropic etching, the plasma process is performed with little or no low frequency bias power applied to the system. Thus, ion attraction to the substrate is minimized by providing no low frequency power. Further, relatively high pressures are maintained so as to further promote isotropic behavior.

Abstract: Disclosed is a substrate treating method for performing a heat treatment of a substrate in a heat treating space. The method includes a loading step of loading the substrate on support pins, an exhaust step of exhausting gas within the heat treating space, an inert gas supply step of supplying inert gas into the heat treating space, an under-substrate space gas discharging step of discharging gas within an under-substrate space between the substrate and the top face of the heat treating plate, and a heat treating step of retracting the support pins into the heat treating plate, and performing the heat treatment of the substrate placed on the top face of the heat treating plate in the heat treating space.

Abstract: The present disclosure is directed to etching compositions that are useful, e.g., for selectively removing tantalum (Ta) and/or tantalum nitride (TaN) from a semiconductor substrate as an intermediate step in a multistep semiconductor manufacturing process.

Abstract: A removal apparatus for removing residual gases and a substrate treating facility for removing residual gases is disclosed. The residual gas removal apparatus includes a housing, a gas supply for providing a non-reactive gas into the housing, a supporting member provided to support a substrate and positioned in the housing, a heat radiating member spaced apart from the supporting member and positioned in the housing, and a heating unit for providing heat toward the supporting member and positioned between the heat radiating member and the supporting member.

Abstract: A surface treatment solution includes a fluoride source; a first solvent; and a water transforming agent to transform water produced during wafer surface treatment into a second solvent, which can be the same as, or different from, the first solvent. The solution can be used, for example, in surface preparation for wafers having a backend including an electrical interconnect that includes aluminum or an aluminum alloy.

Abstract: A semiconductor device includes a plurality of leads, a semiconductor element electrically connected to the leads and supported by one of the leads, and a sealing resin covering the semiconductor element and a part of each lead. The sealing resin includes a first edge, a second edge perpendicular to the first edge, and a center line parallel to the first edge. The reverse surfaces of the respective leads include parts exposed from the sealing resin, and the exposed parts include an outer reverse-surface mount portion and an inner reverse-surface mount portion that are disposed along the second edge of the sealing resin. The inner reverse-surface mount portion is closer to the center line of the sealing resin than is the outer reverse-surface mount portion. The outer reverse-surface mount portion is greater in area than the inner reverse-surface mount portion.

Abstract: A substrate cleaning device 1 includes a substrate holding unit 10 configured to hold a substrate W, a first cleaning unit 11 having a first cleaning member 11a caused to come into contact with a first surface WA of the substrate W held by the substrate holding unit 10 to clean the first surface WA, a second cleaning unit 12 having a second cleaning member 12a caused to come into contact with the first surface WA of the substrate W held by the substrate holding unit 10 to clean the first surface WA, and a controller 50 configured to control the first and second cleaning units 11, 12 so that, when any one of the first cleaning member 11a and the second cleaning member 12a cleans the first surface WA of the substrate W held by the substrate holding unit 10, the other cleaning member is at a position apart from the substrate W held by the substrate holding unit 10.

Abstract: A method and a system for etching of semiconductor substrates, and particularly, wet etching of wafers. The etch rate of liquid solutions applied on the wafer is adjusted by irradiating the liquid solutions with spatially varied light intensity. Photo-reactive agents are added to the liquid solutions, the agents including photo acids, photo bases and photo-oxidizers. Illumination of the photo-reactive agents causes increase/decrease of the pH value and oxidation potential value of the liquid solutions.

Abstract: Provided is a laser processing apparatus comprises a stage holding a substrate, the stage being movable in a first direction, a laser beam source radiating a laser beam onto the substrate, a dust-suction duct having a first optical path extending in a second direction perpendicular to the first direction, the laser beam travelling along the first optical path thereof, and an air aspirator aspirating an air toward a direction opposite to the first direction, wherein the dust-suction duct includes a pair of air-guiding plates opposed to each other along a third direction perpendicular to the first and second directions, and wherein the pair of the air-guiding plates are configured to have a gap therebetween such that it is narrowest in an optical path region and gets wider as it is far away from the optical path region in upstream and downstream regions thereof.

Abstract: Provided is an endless metal ring manufacturing method for manufacturing an endless metal ring by carrying out a barrel polishing step for polishing the endless metal ring by using a barrel of a resin material, a rolling step for rolling the endless metal ring which was cleaned, and a nitriding step for nitriding the endless metal ring which was rolled, wherein after the barrel polishing step and before the rolling step, provided is a resin removing step for removing resin that has adhered to the endless metal ring.

Abstract: A semiconductor device inspection device includes a semiconductor device stage, a sound wave generator, a laser emitter, a photoreceiver, and a processing circuit. The sound wave generator is configured to generate a sound wave having a natural frequency of a bonding wire included in a semiconductor device placed on the semiconductor device stage. The laser emitter is configured to direct laser toward the bonding wire while the sound wave generator generates the sound wave. The photoreceiver is configured to receive the laser reflected by the bonding wire and output a signal corresponding to the received laser. The processing circuit is configured to detect a bonding failure of the bonding wire based on the signal output by the photoreceiver.

Abstract: A method for cleaning a substrate includes supplying to a substrate a film-forming processing liquid which includes a volatile component and forms a film on the substrate, vaporizing the volatile component in the film-forming processing liquid such that the film-forming processing liquid solidifies or cures on the substrate and forms a processing film on the substrate, supplying to the substrate having the processing film a strip-processing liquid which strips the processing film from the substrate, and supplying to the processing film formed on the substrate a dissolving-processing liquid which dissolves the processing film after the supplying of the strip-processing liquid.

Abstract: A substrate processing method includes a processing liquid supplying step of supplying a processing liquid having a solute and a solvent to a front surface of a substrate, a processing film forming step of forming on the front surface of the substrate a processing film which holds a removal object present on the front surface of the substrate by solidifying or curing the processing liquid supplied to the front surface of the substrate, and a peeling step of peeling the processing film from the front surface of the substrate together with the removal object by supplying a peeling liquid to the front surface of the substrate, and the peeling step includes a penetrating hole forming step of forming a penetrating hole on the processing film by dissolving partially the processing film in the peeling liquid.

Abstract: A method and apparatus for significantly extending the shelf life of an inert gas infused fluid. Air that has been subjected to a high electrical potential corona and then mixed with a fluid in a constant differential pressure venturi is delivered to an improved container apparatus wherein an inert gas is infused into the fluid such that the resultant stabilized fluid demonstrates significantly improved usable life. Alternatively, an additive may be combined to provide application specific characteristics. The combination of the method and apparatus, taken together, provide substantially increased shelf life of an inert gas infused fluid.

Abstract: A gas dissolving system using double mixers to generate a higher gas concentration in liquid is disclosed. The gas dissolving system includes two gas mixers, a degassing device, pressure valves, a pressure sensor, and a pump. Liquid flows through mixers to entrain gas therein, and it thus contains dissolved gas and undissolved gas. The liquid subsequently flows into the degassing device so that undissolved gas is released to the outside environment, and dissolved gas remains in the liquid. The liquid with dissolved gas combines with raw liquid and is diluted so that it becomes liquid with a desired gas concentration as the output. A high gas concentration of liquid is obtained after more cycles of fluid flow through the mixers to dissolve gas without combining raw liquid.

Abstract: A method for fabricating an electronic device including a semiconductor memory may include: forming a material layer over a substrate; forming a material pattern by etching the material layer, the etching providing an etch residue on sidewalls of the material pattern; and removing the etch residue, wherein removing of the etch residue includes performing a cleaning process using a cleaning composition including water and a fluorine-containing compound or an amine, and having a pH in a range of 7 to 14.

Abstract: The purpose is, in mounting a semiconductor device onto a substrate, to make it easy to identify the remaining amount of an auxiliary joining agent, to stabilize the dispensing amount of the auxiliary joining agent, and to prevent a shortage of the auxiliary joining agent. Also for the purpose of efficient maintenance of a mounting machine, provided is an auxiliary joining agent adapted to aid joining of metals and prepared by dissolving a colorant in a solvent having a reducing property of removing an oxide film on a metal surface. The auxiliary joining agent is produced by a method including a step of mixing a solvent having a reducing property of removing an oxide film on a metal surface, and a colorant having a property of dissolving in the solvent.

Abstract: A silicon member and a method of producing the silicon member are provided. Cracking is suppressed in the silicon member even if the silicon member is used in a condition where it is heated. The silicon member 10 includes a coating layer 11 that coats a surface of the silicon member 10, wherein the coating layer 11 is composed of a product of silicon formed by reaction of the silicon on the surface, and a thickness of the coating layer is 15 nm or more and 600 nm or less. It is preferable that the coating layer is a silicon oxide film or a silicon nitride film.

Abstract: A substrate having a film of a coating liquid containing metal is held by a spin chuck, the film having been exposed in a predetermined pattern. A slit nozzle supplies a development liquid to a surface to be processed of the substrate supported by the spin chuck. A cleaning liquid for removing or dissolving metal is supplied by a cleaning nozzle to the surface to be processed of the substrate to which the development liquid has been supplied.

Abstract: In a method of cleaning a photomask, a wiper tape is guided from a wiper tape supplying reel, over a cleaning head, and then onto a wiper tape collecting reel. A section of the wiper tape over the cleaning head is brought into contact with an adhesive residue on a surface of the photomask. A relative movement is caused between the photomask and the section of the wiper tape to remove the adhesive residue from the surface of the photomask.

Abstract: A substrate processing apparatus includes a substrate holder that holds a substrate, a processing liquid piping that is communicatively connected with a discharge port for discharging a processing liquid, a processing liquid supplier that supplies the processing liquid to the processing liquid piping, a suction unit for suctioning the processing liquid present inside the processing liquid piping, and a controller which controls the processing liquid supplying unit and the suction unit. The controller executes a processing liquid supplying step that supplies the processing liquid to the processing liquid piping and a suctioning step that suctions the processing liquid inside the processing liquid piping by the suction unit. The controller selectively executes a first suctioning step and a second suctioning step of the processing liquid.

Abstract: The mechanisms for cleaning a surface of a semiconductor wafer for a hybrid bonding are provided. The method for cleaning a surface of a semiconductor wafer for a hybrid bonding includes providing a semiconductor wafer, and the semiconductor wafer has a conductive pad embedded in an insulating layer. The method also includes performing a plasma process to a surface of the semiconductor wafer, and metal oxide is formed on a surface of the conductive structure. The method further includes performing a cleaning process using a cleaning solution to perform a reduction reaction with the metal oxide, such that metal-hydrogen bonds are formed on the surface of the conductive structure. The method further includes transferring the semiconductor wafer to a bonding chamber under vacuum for hybrid bonding. The mechanisms for a hybrid bonding and a integrated system are also provided.

Abstract: Embodiments provide a polishing composition for a magnetic disk substrate, which contains colloidal silica having an average primary particle size of 5 to 200 nm, fumed silica having an average particle size of 30 to 800 nm, pulverized wet-process silica particles having an average particle size of 100 to 1000 nm, and water. According to an embodiment, a ratio of the colloidal silica is 5 to 90% by mass, a ratio of the fumed silica is 5 to 90% by mass, and a ratio of the pulverized wet-process silica particles is 5 to 90% by mass with respect to all the silica particles, and a concentration of all the silica particles is 1 to 50% by mass.

Abstract: A chemical mechanical polishing composition, including, as initial components: water; an abrasive; an inorganic salt of an alkali metal or an ammonium salt or mixtures thereof; a benzyltrialkyl quaternary ammonium compound having formula (I): wherein R1, R2 and R3 are each independently chosen from a (C1-C4)alky group; an anion; and, a hydroxyl-containing quaternary ammonium compound having formula (II): wherein R4, R5, R6 is each independently chosen from H and an alkyl group; wherein R7 is an alkylene group; and anions. Also disclosed are methods for polishing a substrate with the chemical mechanical polishing composition.

Abstract: A substrate liquid processing apparatus includes a liquid processing unit configured to store a processing liquid and a substrate and process the substrate using the processing liquid, the processing liquid including a phosphoric acid aqueous solution; a phosphoric acid aqueous solution supply unit configured to supply the phosphoric acid aqueous solution to the liquid processing unit; a discharge line connected to the liquid processing unit, and configured to discharge the processing liquid; a return line switchably connected to the discharge line, and configured to return the processing liquid to the liquid processing unit; a recycling line switchably connected to the discharge line, and including a recycling unit configured to recycle the processing liquid; and a waste line switchably connected to the discharge line, and configured to discard the processing liquid to the outside.

Abstract: The present invention relates to a system and a method of removing a foreign material by using an electric field adsorbing scheme, which are capable of easily adsorbing and removing a foreign material on a surface of a film by using an electric field adsorbing scheme through a micro-current (several micro ampere) voltage driving method, not a surface treatment method, such as plasma discharge processing, corona discharge processing, and air blowing processing, which causes damage to the surface of the film, in a processing process for removing the foreign material on the surface of the film, and particularly, which exclude high pressure discharge processing and the like, thereby decreasing an incurrence rate of a safety accident of an operator and preventing a surface of a film from being scratched.