Semiconductor Cleaning Patents (Class 134/1.3)
  • Patent number: 10570514
    Abstract: The present invention is in the field of processes for the generation of thin inorganic films on substrates, in particular atomic layer deposition processes. It relates to a process for preparing metal films comprising (a) depositing a metal-containing compound from the gaseous state onto a solid substrate and (b) bringing the solid substrate with the deposited metal-containing compound in contact with a reducing agent in the gaseous state, wherein the reducing agent is or at least partially forms at the surface of the solid substrate a carbene, a silylene or a phosphor radical.
    Type: Grant
    Filed: November 29, 2016
    Date of Patent: February 25, 2020
    Assignee: BASF SE
    Inventors: Falko Abels, David Dominique Schweinfurth, Karl Matos, Daniel Loeffler, Maraike Ahlf, Florian Blasberg, Thomas Schaub, Jan Spielmann, Axel Kirste, Boris Gaspar
  • Patent number: 10564549
    Abstract: A method of forming a thin film pattern includes providing a thin film on a substrate, providing a photoresist on the thin film, forming a first photoresist pattern having a first packing density by exposing and developing the photoresist, etching the thin film by using the first photoresist pattern as a mask, processing the first photoresist pattern to convert the first photoresist pattern into a second photoresist pattern having a second packing density, which is lower than the first packing density, and stripping the second photoresist pattern by spraying steam onto the second photoresist pattern.
    Type: Grant
    Filed: August 31, 2017
    Date of Patent: February 18, 2020
    Assignee: SAMSUNG DISPLAY CO., LTD.
    Inventors: Beung Hwa Jeong, Jong Hyun Choung, Sung Chul Kim
  • Patent number: 10541214
    Abstract: When III-V semiconductor material is bonded to an oxide material, water molecules can degrade the bonding if they become trapped at the interface between the III-V material and the oxide material. Because water molecules can diffuse readily through oxide material, and may not diffuse as readily through III-V material or through silicon, forcing the III-V material against the oxide material can force water molecules at the interface into the oxide material and away from the interface. Water molecules present at the interface can be forced during manufacturing through vertical channels in a silicon layer into a buried oxide layer thereby to enhance bonding between the III-V material and the oxide material. Water molecules can be also forced through lateral channels in the oxide material, past a periphery of the III-V material, and, through diffusion, out of the oxide material into the atmosphere.
    Type: Grant
    Filed: April 27, 2018
    Date of Patent: January 21, 2020
    Assignee: Juniper Networks, Inc.
    Inventors: Avi Feshali, John Hutchinson
  • Patent number: 10515808
    Abstract: A chemical mechanical polishing (CMP) system includes an O3/DIW generator, a polishing unit, and a cleaning unit. The O3/DIW generator is configured to generate an O3/DIW solution including ozone gas (O3) dissolved in deionized water (DIW). The polishing unit includes components for buffing a surface of a semiconductor structure, and a pipeline coupled to the O3/DIW generator to receive the O3/DIW solution for the buffing. The cleaning unit is coupled to the O3/DIW generator and is configured to clean the surface of the semiconductor structure using the O3/DIW solution.
    Type: Grant
    Filed: September 16, 2016
    Date of Patent: December 24, 2019
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Shich-Chang Suen, Chi-Jen Liu, Ying-Liang Chuang, Li-Chieh Wu, Liang-Guang Chen, Ming-Liang Yen
  • Patent number: 10507597
    Abstract: Method and device for delamination/dismantling of multi-layer systems SM comprising several layers including at least one organic layer, wherein the layers are separated by interfaces, characterized in that it comprises at least the following steps: Mixing the multilayer system with a fluid composed of at least one gas having the particularity of causing the swelling of at least one of the layers and one or more non-reactive liquids having the particularity of allowing the separation of each layer unitarily or of subsets of layers composing the multilayer system without degradation of the constituents of the layers, the gas/liquid fluid being raised in temperature and pressure, Recovering separately at least one or more layers or a subset of undegraded layers.
    Type: Grant
    Filed: September 2, 2016
    Date of Patent: December 17, 2019
    Assignee: CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE
    Inventors: Cyril Aymonier, Cédric Slostowski
  • Patent number: 10508222
    Abstract: A polishing composition used in an application to polish silicon nitride is characterized by containing colloidal silica in which an organic acid, such as a sulfonic acid or a carboxylic acid, is immobilized, and having a pH of 6 or less.
    Type: Grant
    Filed: April 30, 2018
    Date of Patent: December 17, 2019
    Assignee: FUJIMI INCORPORATED
    Inventors: Takahiro Mizuno, Shuugo Yokota, Yasuyuki Yamato, Tomohiko Akatsuka
  • Patent number: 10508344
    Abstract: Formulations for stabilizing hydrogen peroxide, comprising water soluble Zn+2 ions at 0.7 to 100 parts per million of an alkaline hydrogen peroxide solution. In some examples, the alkaline hydrogen peroxide solution is a silicon wafer cleaning solution comprised of H2O2 and NH4OH—H2O and the water soluble Zn+2 ions are present at 3 to 100 parts per million of the silicon wafer cleaning solution. In some examples, the alkaline hydrogen peroxide solution is a wet etching formulation selective for TiN and the water soluble Zn+2 ions are present at 0.7 to 10 parts per million of the wet etching formulation. In some examples, the alkaline hydrogen peroxide solution is a wet etching formulation selective for Ti and Zn ions are present at 2 to 7 parts per million.
    Type: Grant
    Filed: May 10, 2019
    Date of Patent: December 17, 2019
    Inventor: Shankar Rananavare
  • Patent number: 10483407
    Abstract: A method of forming Si3Nx, where “x” is less than 4 and at least 3, comprises decomposing a Si-comprising precursor molecule into at least two decomposition species that are different from one another, at least one of the at least two different decomposition species comprising Si. An outer substrate surface is contacted with the at least two decomposition species. At least one of the decomposition species that comprises Si attaches to the outer substrate surface to comprise an attached species. The attached species is contacted with a N-comprising precursor that reacts with the attached species to form a reaction product comprising Si3Nx, where “x” is less than 4 and at least 3. Other embodiments are disclosed, including constructions made in accordance with method embodiments of the invention and constructions independent of method of manufacture.
    Type: Grant
    Filed: April 19, 2018
    Date of Patent: November 19, 2019
    Assignee: Micron Technology, Inc.
    Inventors: Fei Wang, Kunal Shrotri, Jeffery B. Hull, Anish A. Khandekar, Duo Mao, Zhixin Xu, Ee Ee Eng, Jie Li, Dong Liang
  • Patent number: 10475658
    Abstract: Compositions useful for the selective removal of silicon-containing materials relative to germanium-containing materials, and vice versa, from a microelectronic device having same thereon. The removal compositions include at least one diol and are tunable to achieve the required Si:Ge removal selectivity and etch rates.
    Type: Grant
    Filed: December 29, 2014
    Date of Patent: November 12, 2019
    Assignee: ENTEGRIS, INC.
    Inventors: Steven Bilodeau, Emanuel I. Cooper
  • Patent number: 10460924
    Abstract: The present invention relates to a novel process for producing a surface-treated gallium arsenide substrate as well as novel provided gallium arsenide substrates as such as well as the use thereof. The improvement of the process according to the invention is based on a particular final surface treatment with an oxidation treatment of at least one surface of the gallium arsenide substrate in dry condition by means of UV radiation and/or ozone gas, a contacting of the at least one surface of the gallium arsenide substrate with at least one liquid medium and a Marangoni drying of the gallium arsenide substrate. The gallium arsenide substrates provided according to the invention exhibit a so far not obtained surface quality, in particular a homogeneity of surface properties, which is detectable by means of optical surface analyzers, specifically by means of ellipsometric lateral substrate mapping for the optical contact-free quantitative characterization.
    Type: Grant
    Filed: February 12, 2014
    Date of Patent: October 29, 2019
    Assignee: FREIBERGER COMPOUND MATERIALS GMBH
    Inventors: Wolfram Fliegel, Christoph Klement, Christa Willnauer, Max Scheffer-Czygan, André Kleinwechter, Stefan Eichler, Berndt Weinert, Michael Mäder
  • Patent number: 10446387
    Abstract: An apparatus and method are provided to: determine a unique profile to etch each wafer, execute that etch, and determine and deliver the proper chemical addition in order to maintain etch rate within tight tolerances.
    Type: Grant
    Filed: April 3, 2017
    Date of Patent: October 15, 2019
    Assignee: VEECO PRECISION SURFACE PROCESSING LLC
    Inventors: Laura Mauer, John Taddei, James Swallow, David Goldberg, Eric Kurt Zwirnmann
  • Patent number: 10435604
    Abstract: A method is provided for converting heat from a heat source to mechanical energy. The method comprises heating a working fluid using heat supplied from the heat source; and expanding the heated working fluid to lower pressure of the working fluid and generating mechanical energy as the pressure of the working fluid is lowered. The method is characterized by using a working fluid comprising (2E)-1,1,1,4,5,5,5-heptafluoro-4-(trifluoromethyl)pent-2-ene (HFO-153-10mzzy). Also provided is a power cycle apparatus. The apparatus is characterized by containing a working fluid comprising HFO-153-10mzzy.
    Type: Grant
    Filed: October 9, 2015
    Date of Patent: October 8, 2019
    Assignee: THE CHEMOURS COMPANY FC, LLC
    Inventors: Konstantinos Kontomaris, Robert Daniel Lousenberg
  • Patent number: 10431464
    Abstract: A method includes forming a dielectric layer on a substrate and patterning the dielectric layer to form an opening in the dielectric layer. A first layer of metallic material (e.g., non-nitride metal) is deposited to form a liner layer on an upper surface of the dielectric layer and on exposed surfaces within the opening. A second layer of metallic material (e.g., copper) is deposited to fill the opening with metallic material. An overburden portion of the second layer of metallic material is removed by planarizing the second layer of metallic material down an overburden portion of the liner layer on the upper surface of the dielectric layer. A surface treatment process (e.g., plasma nitridation) is performed to convert the overburden portion of the liner layer into a layer of metal nitride material. The layer of metal nitride material is selectively etched away using a wet etch process.
    Type: Grant
    Filed: October 17, 2016
    Date of Patent: October 1, 2019
    Assignee: International Business Machines Corporation
    Inventor: Chih-Chao Yang
  • Patent number: 10354866
    Abstract: Equipment to automatically transfer a graphene monolayer deposited on a metal layer and protected with a polymer layer to a substrate, comprising at least one liquid inlet, at least one sensor to control the level and pH of the liquids, at least one liquid outlet to drain the liquids, a stirring element to homogenise the liquid mixture and a ramp to feed in the substrate and method to automatically transfer a graphene monolayer to a substrate, which uses said equipment.
    Type: Grant
    Filed: July 27, 2015
    Date of Patent: July 16, 2019
    Assignee: GRAPHENEA, S.A.
    Inventors: Amaia Zurutuza Elorza, Alba Centeno Perez, Beatriz Alonso Rodriguez, Amaia Pesquera Rodriguez, Jesus De La Fuente Cosio
  • Patent number: 10354913
    Abstract: A method of forming a semiconductor device includes forming a conductive feature in a first dielectric layer, forming one or more dielectric layers over the first dielectric layer, and forming a via opening in the one or more dielectric layers, a bottom of the via opening exposing the conductive feature. The method further includes cleaning the via opening using a chemical mixture, and rinsing the via opening using basic-ion doped water after cleaning the via opening.
    Type: Grant
    Filed: November 1, 2017
    Date of Patent: July 16, 2019
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Nai-Chia Chen, Chun-Li Chou, Yen-Chiu Kuo, Chun-Hung Chao, Yu-Li Cheng
  • Patent number: 10340186
    Abstract: Systems, apparatuses, and methods related to the design, fabrication, and manufacture of gallium arsenide (GaAs) integrated circuits are disclosed. Copper can be used as the contact material for a GaAs integrated circuit. Metallization of the wafer and through-wafer vias can be achieved through copper plating processes disclosed herein. Various protocols can be employed during processing to avoid cross-contamination between copper-plated and non-copper-plated wafers. GaAs integrated circuits can be singulated, packaged, and incorporated into various electronic devices.
    Type: Grant
    Filed: July 24, 2015
    Date of Patent: July 2, 2019
    Assignee: Skyworks Solutions, Inc.
    Inventor: Hong Shen
  • Patent number: 10311606
    Abstract: Provided are improved referenceless multi-material beam hardening correction methods, with an emphasis on maintaining data quality for real-world imaging of geologic materials with a view towards automation. A referenceless post reconstruction (RPC) correction technique is provided that applies the corrections in integrated attenuation space. A container-only pre-correction technique also is provided to allow automation of the segmentation process required for beam hardening correction methods.
    Type: Grant
    Filed: August 15, 2015
    Date of Patent: June 4, 2019
    Inventors: Jeremy James Holt, Andrew Maurice Kingston, Adrian Paul Sheppard
  • Patent number: 10312073
    Abstract: A semi-aqueous wet clean system and method for removing carbon-containing silicon material (e.g., plasma residue) or nitrogen-containing silicon material (e.g., plasma residue) includes a hydroxyl-terminated organic compound, a diol, and a fluoride ion donor material. The system is configured to protect silicon oxide and amorphous silicon during a post-dry-etch wet clean. The wet clean system is configured to selectively remove carbon-containing or nitrogen-containing plasma residue. pH of the wet clean system can be modified to tune selectivity for removal of carbon-containing or nitrogen-containing plasma residues. As a result, positive TEOS recession of less than about 3 nanometers may be achieved. Additionally, the wet clean system can be adapted for reclamation and subsequent reuse.
    Type: Grant
    Filed: January 12, 2018
    Date of Patent: June 4, 2019
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Yao-Wen Hsu, Jian-Jou Lian, Neng-Jye Yang, Kuan-Lin Chen
  • Patent number: 10312128
    Abstract: Chemical-mechanical polishing (CMP) devices, tools, and methods are disclosed. In some embodiments, a device for a CMP tool includes a carrier and an embedded dummy disk coupled to the carrier. The embedded dummy disk comprises a substrate and a film disposed over the substrate. The carrier is coupleable to an arm of a handler of the CMP tool. The carrier and the embedded dummy disk are adapted to be embedded within a housing of the CMP tool. The embedded dummy disk is adapted to be polished by the CMP tool in preparation for a polishing process for a wafer.
    Type: Grant
    Filed: December 31, 2015
    Date of Patent: June 4, 2019
    Assignee: Taiwan Semiconductor Manufacturing Company Ltd.
    Inventor: Chang-Sheng Lin
  • Patent number: 10283344
    Abstract: The present disclosure generally relates to apparatus and methods for forming a low-k dielectric material on a substrate. The method includes various substrate processing steps utilizing a wet processing chamber, a solvent exchange chamber, and a supercritical fluid chamber. More specifically, a dielectric material in an aqueous solution may be deposited on the substrate and a solvent exchange process may be performed to prepare the substrate for a supercritical drying process. During the supercritical drying process, liquids present in the solution and remaining on the substrate from the solvent exchange process are removed via sublimation during the supercritical drying process. The resulting dielectric material formed on the substrate may be considered a silica aerogel which exhibits a very low k-value.
    Type: Grant
    Filed: July 10, 2015
    Date of Patent: May 7, 2019
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Steven Verhaverbeke, Han-Wen Chen, Roman Gouk, Kurtis Leschkies
  • Patent number: 10279379
    Abstract: A fluid manifold comprised of a manifold adapted to deliver fluid directly into a gap formed between a surface of a substrate and an acoustic transducer. The fluid is delivered into the gap at a variable rate along a length of the manifold. Preferably, the manifold includes a plurality of apertures positioned along the length of the manifold for dispensing the fluid into the gap at the variable rate.
    Type: Grant
    Filed: October 2, 2017
    Date of Patent: May 7, 2019
    Assignee: Product Systems Incorporated
    Inventors: Mark J. Beck, Eric G. Liebscher
  • Patent number: 10233413
    Abstract: A composition useful for removing residue from a semiconductor substrate comprising in effective cleaning amounts: from about 55 to 80% by weight of water; from about 0.3 to about 5.0% by weight of EDTA; from about 10.0 to about 30.0% by weight of an amine compound wherein the amine compound is selected from the group consisting of a secondary amine, a tertiary amine, and mixtures thereof; from about 0.1 to about 5.0% by weight of a polyfunctional organic acid; from about 0.01 to about 8.0% by weight of a fluoride ion source; from about 0 to about 60% by weight of a water-miscible organic solvent; and from about 0 to about 15% by weight of a corrosion inhibitor.
    Type: Grant
    Filed: September 13, 2016
    Date of Patent: March 19, 2019
    Assignee: VERSUM MATERIALS US, LLC
    Inventor: Seiji Inaoka
  • Patent number: 10163655
    Abstract: Apparatuses and methods are disclosed herein for densification of through substrate insulating liners. An example method may include forming a through substrate via through at least a portion of a substrate, forming a first liner layer in the through substrate via, and densifying the first liner layer. The example method may further include forming a second liner layer on the first liner layer, and densifying the second liner layer.
    Type: Grant
    Filed: November 20, 2015
    Date of Patent: December 25, 2018
    Assignee: Micron Technology, Inc.
    Inventors: Jin Lu, Rita J. Klein, Diem Thy N. Tran, Irina V. Vasilyeva, Zhiqiang Xie
  • Patent number: 10157801
    Abstract: A method includes performing Chemical Mechanical Polish (CMP) on a wafer, placing the wafer on a chuck, performing a post-CMP cleaning on the wafer, and determining cleanness of the wafer when the wafer is located on the chuck.
    Type: Grant
    Filed: January 4, 2016
    Date of Patent: December 18, 2018
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Yu-Ting Yen, Chi-Ming Tsai, Hui-Chi Huang
  • Patent number: 10138553
    Abstract: To reduce pumping time of a vacuum treatment chamber served by a transport arrangement in a transport chamber. The vacuum treatment chamber is split in a workpiece treatment compartment and in a pumping compartment in mutual free flow communication and arranged opposite each other with respect to a movement path of the transport arrangement serving the vacuum treatment chamber. The pumping compartment allows providing a pumping port of a flow cross-section area freely selectable independently from the geometry of the treatment compartment.
    Type: Grant
    Filed: May 25, 2016
    Date of Patent: November 27, 2018
    Assignee: EVATEC AG
    Inventors: Bart Scholte Von Mast, Wolfgang Rietzler, Rogier Lodder, Rolf Bazlen, Daniel Rohrer
  • Patent number: 10121649
    Abstract: A wax removal method uniformly removes wax adhering to a wafer surface and reduces the problems of re-adhesion of particles and filter clogging of a cleaning bath during cleaning. The method uses cleaning liquid which contains microbubbles.
    Type: Grant
    Filed: December 1, 2009
    Date of Patent: November 6, 2018
    Assignee: SILTRONIC AG
    Inventor: Teruo Haibara
  • Patent number: 10109508
    Abstract: A substrate processing device includes a bath configured to accommodate a plurality of substrates and configured to store a liquid for etching the plurality of substrates, a plurality of bubble generators configured to generate bubbles in the liquid, the bubble generators provided so as to correspond to each of the plurality of substrates, a measurement device configured to measure the generation state of the bubbles of at least one of the plurality of bubble generators, and a control device configured to individually control at least one of the plurality of bubble generators based on the measurement result of the measurement device.
    Type: Grant
    Filed: March 1, 2017
    Date of Patent: October 23, 2018
    Assignee: TOSHIBA MEMORY CORPORATION
    Inventors: Hiroaki Ashidate, Katsuhiro Sato
  • Patent number: 10096497
    Abstract: A substrate liquid processing apparatus includes a liquid processing unit configured to process a substrate by a processing liquid, and a controller. The controller processes the substrate in the liquid processing unit, and switches the processing liquid discharged from a discharge line, from a recycling line, to a waste line in which the processing liquid is discarded through the discharge line to the outside, according to a concentration of an elution component eluted from the substrate.
    Type: Grant
    Filed: June 28, 2017
    Date of Patent: October 9, 2018
    Assignee: Tokyo Electron Limited
    Inventor: Hideaki Sato
  • Patent number: 10037881
    Abstract: The object of the present invention is to provide a wafer cleaning apparatus that reduces the amount of dissolved oxygen, without using hydrogen peroxide, to be able to reduce the deformation, etc. of a wafer and to reduce silicon consumption and a wafer cleaning method using the same.
    Type: Grant
    Filed: January 15, 2016
    Date of Patent: July 31, 2018
    Assignee: APET
    Inventors: Robert Henry Pagliaro, Sung Ho Hong, Jin Tae Kim, Deok Ho Kim
  • Patent number: 10032655
    Abstract: A substrate cleaning device 1 includes a substrate holding unit 10 configured to hold a substrate W, a first cleaning unit 11 having a first cleaning member 11a caused to come into contact with a first surface WA of the substrate W held by the substrate holding unit 10 to clean the first surface WA, a second cleaning unit 12 having a second cleaning member 12a caused to come into contact with the first surface WA of the substrate W held by the substrate holding unit 10 to clean the first surface WA, and a controller 50 configured to control the first and second cleaning units 11, 12 so that, when any one of the first cleaning member 11a and the second cleaning member 12a cleans the first surface WA of the substrate W held by the substrate holding unit 10, the other cleaning member is at a position apart from the substrate W held by the substrate holding unit 10.
    Type: Grant
    Filed: July 17, 2014
    Date of Patent: July 24, 2018
    Assignee: EBARA CORPORATION
    Inventors: Takeshi Sakurai, Eiji Hirai, Kaoru Hamaura, Mitsuru Miyazaki, Koji Maruyama
  • Patent number: 10020208
    Abstract: A method for cleaning semiconductor substrate using ultra/mega sonic device comprising holding a semiconductor substrate by using a chuck, positioning a ultra/mega sonic device adjacent to the semiconductor substrate, injecting chemical liquid on the semiconductor substrate and gap between the semiconductor substrate and the ultra/mega sonic device, changing gap between the semiconductor substrate and the ultra/mega sonic device for each rotation of the chuck during the cleaning process. The gap can be increased or reduced by 0.5/N for each rotation of the chuck, where ? is wavelength of ultra/mega sonic wave, N is an integer number between 2 and 1000. The gap is varied in the range of 0.5?n during the cleaning process, where ? is wavelength of ultra/mega sonic wave, and n is an integer number starting from 1.
    Type: Grant
    Filed: January 27, 2017
    Date of Patent: July 10, 2018
    Assignee: ACM Research (Shanghai) Inc.
    Inventors: Jian Wang, Sunny Voha Nuch, Liangzhi Xie, Junping Wu, Zhaowei Jia, Yunwen Huang, Zhifeng Gao, Hui Wang
  • Patent number: 10011918
    Abstract: An electro-chemical plating process begins with supplying a supercritical fluid into an electroplating solution to be deposited, and a bias is applied between a substrate and an electrode, which is located in the electroplating solution. The substrate is placed into the electroplating solution to deposit a material on the substrate.
    Type: Grant
    Filed: December 23, 2014
    Date of Patent: July 3, 2018
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Ying-Hsueh Changchien, Yu-Ming Lee, Chi-Ming Yang
  • Patent number: 9991090
    Abstract: The present invention discloses an electron microscope and FIB system for processing and imaging of a variety of materials using two separate laser beams of different characteristics. The first laser beam is used for large bulk material removal and deep trench etching of a workpiece. The second laser beam is used for finer precision work, such as micromachining of the workpiece, small spot processing, or the production of small heat affected zones. The first laser beam and the second laser beam can come from the same laser source or come from separate laser sources. Having one laser source has the additional benefits of making the system cheaper and being able to create separate external and internal station such that the debris generated from bulk material removal from the first laser beam will not interfere with vacuum or components inside the particle beam chamber.
    Type: Grant
    Filed: November 15, 2012
    Date of Patent: June 5, 2018
    Assignee: FEI Company
    Inventor: Kelly Bruland
  • Patent number: 9952510
    Abstract: A thinner composition includes propyleneglycol C1-C10 alkylether, C1-C10 alkyl C1-C10 alkoxy propionate, and C1-C10 alkyl lactate, thereby is it possible to improve applicability of a photoresist while remarkably reducing an amount of the used photoresist, as well as having excellent solubility and EBR property to various photoresists, BARCs and underlayers.
    Type: Grant
    Filed: February 5, 2016
    Date of Patent: April 24, 2018
    Assignee: DONGWOO FINE-CHEM CO., LTD.
    Inventors: Cheol Min Choi, In Kak Song, Kyong Ho Lee
  • Patent number: 9895645
    Abstract: An apparatus for treating a substrate, including a chamber; a substrate treater in the chamber; a purifier connected to the chamber, the purifier to purify polluted air in the chamber; a light source in the chamber, the light source to irradiate light; and a light-shield to block the light irradiated by the light source from arriving at the substrate treater.
    Type: Grant
    Filed: February 3, 2016
    Date of Patent: February 20, 2018
    Assignee: SAMSUNG DISPLAY CO., LTD.
    Inventor: Jin Goo Kang
  • Patent number: 9889477
    Abstract: A cleaning and inspection system includes a cleaning chamber and retaining structure disposed within the cleaning chamber and configured to secure an article to be cleaned within the cleaning chamber. The cleaning and inspection system also includes a gas distributor disposed within the cleaning chamber and configured to distribute a turbulent flow of gas into the cleaning chamber that facilitates removal of foreign particles from a surface of the article. Further, the system includes a particle collection surface positioned to collect foreign particles removed from the surface of the article.
    Type: Grant
    Filed: September 17, 2015
    Date of Patent: February 13, 2018
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Chi-Lun Lu, Sheng-Chi Chin
  • Patent number: 9859131
    Abstract: The present invention has as its object the provision of a desmear treatment device and a desmear treatment method capable of reliably performing a desmear treatment with high treatment efficiency. In the desmear treatment method of the present invention, when irradiating a to-be-treated object disposed in a treatment space with vacuum ultraviolet rays via an ultraviolet transmitting window member to remove smear in the to-be-treated object, a treatment gas containing active species to be activated by the irradiation of the vacuum ultraviolet rays and having contained moisture is supplied into the treatment space. The desmear treatment device includes treatment gas supply means having a humidifying mechanism for causing a treatment gas containing active species to be activated by vacuum ultraviolet rays from an ultraviolet light source to contain moisture.
    Type: Grant
    Filed: May 22, 2015
    Date of Patent: January 2, 2018
    Assignee: Ushio Denki Kabushiki Kaisha
    Inventors: Hiroki Horibe, Tomoyuki Habu
  • Patent number: 9824903
    Abstract: A substrate cleaning apparatus including a self-cleaning device is disclosed. The substrate cleaning apparatus includes a self-cleaning device configured to clean a cylindrical scrub-cleaning tool that is rubbed against a substrate surface. The self-cleaning device includes a cleaning body having an inner circumferential surface that is shaped along an circumferential surface of the scrub-cleaning tool, and at least one cleaning nozzle configured to eject a cleaning fluid toward the circumferential surface of the scrub-cleaning tool through a gap between the circumferential surface of the scrub-cleaning tool and the inner circumferential surface of the cleaning body.
    Type: Grant
    Filed: April 23, 2014
    Date of Patent: November 21, 2017
    Assignee: EBARA CORPORATION
    Inventor: Tomoatsu Ishibashi
  • Patent number: 9805946
    Abstract: Among other things, one or more systems and techniques for removing a photoresist from a semiconductor wafer are provided. The photoresist is formed over the semiconductor wafer for patterning or material deposition. Once completed, the photoresist is removed in a manner that mitigates damage to the semiconductor wafer or structures formed thereon. In an embodiment, trioxygen liquid is supplied to the photoresist. The trioxygen liquid is activated using an activator, such as an ultraviolet activator or a hydrogen peroxide activator, to create activated trioxygen liquid used to remove the photoresist. In an embodiment, the activation of the trioxygen liquid results in free radicals that aid in removing the photoresist. In an embodiment, an initial photoresist strip, such as using a sulfuric acid hydrogen peroxide mixture, is performed to remove a first portion of the photoresist, and the activated trioxygen liquid is used to remove a second portion of the photoresist.
    Type: Grant
    Filed: August 30, 2013
    Date of Patent: October 31, 2017
    Assignee: Taiwan Semiconductor Manufacturing Company Limited
    Inventors: Shang-Yuan Yu, Shao-Yen Ku, Hsiao Chien-Wen, Shao-Fu Hsu, Yuan-Chih Chiang, Wen-Chang Tsai, Jui-Chuan Chang
  • Patent number: 9777251
    Abstract: This invention provides a liquid composition that removes titanium nitride from a substrate without corroding tungsten or a low-k interlayer dielectric also present on said substrate. Said liquid composition has a pH between 0 and 4, inclusive, and contains the following: at least one oxidizing agent (A) selected from the group consisting of potassium permanganate, ammonium peroxodisulfate, potassium peroxodisulfate, and sodium peroxodisulfate; a fluorine compound (B); and a tungsten-corrosion preventer (C). The tungsten-corrosion preventer (C) either contains at least two different compounds selected from a group of compounds (C1) consisting of alkylamines, salts thereof, fluoroalkylamines, salts thereof, and the like or contains at least one compound selected from said group of compounds (C1) and at least one compound selected from a group of compounds (C2) consisting of polyoxyalkylene alkylamines, polyoxyalkylene fluoroalkylamines, and the like.
    Type: Grant
    Filed: January 23, 2015
    Date of Patent: October 3, 2017
    Assignee: MITSUBISHI GAS CHEMICAL COMPANY, INC.
    Inventors: Satoshi Tamai, Kenji Shimada
  • Patent number: 9773744
    Abstract: Generally, the subject matter disclosed herein relates to methods for forming modern sophisticated semiconductor devices, and more specifically, methods wherein substantially lead-free solder bumps may be formed above a contact layer of a semiconductor chip. One illustrative method disclosed herein includes forming a solder bump above a metallization layer of a semiconductor device, removing an oxide film from a surface of the solder bump, and, after removing the oxide film, performing a solder bump reflow process in a reducing ambient to reflow the solder bump.
    Type: Grant
    Filed: July 12, 2011
    Date of Patent: September 26, 2017
    Assignee: GLOBALFOUNDRIES Inc.
    Inventors: Reiner Willeke, Sören Zenner
  • Patent number: 9768042
    Abstract: A substrate processing method is implemented in a substrate processing apparatus including a substrate holding and rotating unit having a spin base rotatable about a predetermined vertical axis, and a processing cup surrounding the substrate holding and rotating unit and arranged to receive processing liquid splattering from the substrate rotated by the substrate holding and rotating unit, the substrate processing method including a substrate rotating step of rotating the spin base to rotate the substrate about the vertical axis at a predetermined liquid processing speed and, in parallel with the substrate rotating step, a processing liquid supplying step of supplying processing liquid onto the lower surface of the substrate at a predetermined first flow rate and supplying processing liquid onto the upper surface of the substrate at a second flow rate that is higher than the first flow rate.
    Type: Grant
    Filed: May 20, 2015
    Date of Patent: September 19, 2017
    Assignee: SCREEN Holdings Co., Ltd.
    Inventors: Asuka Wakita, Ayumi Higuchi
  • Patent number: 9741585
    Abstract: A method for removing polymer is provided. An aqueous solution is applied to a semiconductor workpiece with polymer arranged thereon. The aqueous solution comprises an energy receiver configured to generate reactive radicals in response to energy. Energy is applied to the aqueous solution to generate the reactive radicals in the aqueous solution and to remove the polymer. A process tool for generating the reactive radicals is also provided.
    Type: Grant
    Filed: April 12, 2016
    Date of Patent: August 22, 2017
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Chung-Chieh Lee, Horng-Huei Tseng, Chi-Ming Yang
  • Patent number: 9690206
    Abstract: An exposure apparatus exposes a substrate to light passing through liquid, and includes a stage that holds the substrate. The stage includes a substrate holder including a support member that supports a rear surface of the substrate and a first circumferential wall surrounding the support member. A second circumferential wall surrounds the substrate holder and forms a first groove between the second circumferential wall and the substrate holder, and a second groove on an outer side thereof. A plate member surrounds the substrate on the support member, and a recovery passage recovers liquid flowing from a liquid supply system to a gap between the plate member and the substrate. The second circumferential wall is under the gap so that part of an upper surface of the second circumferential wall faces the substrate rear surface and another part of the upper surface faces a rear surface of the plate member.
    Type: Grant
    Filed: December 28, 2015
    Date of Patent: June 27, 2017
    Assignee: NIKON CORPORATION
    Inventor: Makoto Shibuta
  • Patent number: 9691622
    Abstract: A pre-fill solution for application onto a substrate surface prior to a fill operation is provided, the fill operation defined by application of an electroless deposition solution onto the substrate surface to deposit a metallic material in an etched feature, the substrate surface having metallic contaminants generated from an etch operation that generated the etched feature in the substrate surface, the pre-fill solution effective for preventing the electroless deposition solution from depositing on the metallic contaminants, the pre-fill solution comprising: a surfactant, the surfactant configured to enhance wetting of the substrate surface, the concentration of the surfactant in the solution being approximately in the range of 10 ppm to 2000 ppm, wherein the surfactant is an amphoteric surfactant; oxalic acid dihydrate; and hypophosphorous acid as a pH adjusting agent configured to reduce the pH of the solution to approximately less than 2 during the application onto the substrate surface.
    Type: Grant
    Filed: March 31, 2015
    Date of Patent: June 27, 2017
    Assignee: Lam Research Corporation
    Inventor: Artur Kolics
  • Patent number: 9662686
    Abstract: A device and method for treating the surface of a semiconductor wafer provides a treatment fluid in the form of a dispersion of gas bubbles in a treatment liquid generated at acoustic pressures less than those required to induce cavitation in the treatment liquid. A resonator supplies ultrasonic or megasonic energy to the treatment fluid and is configured to create an interference pattern in the treatment fluid comprising regions of pressure amplitude minima and maxima at an interface of the treatment fluid and the semiconductor wafer.
    Type: Grant
    Filed: September 24, 2010
    Date of Patent: May 30, 2017
    Assignee: LAM RESEARCH AG
    Inventors: Frank Ludwig Holsteyns, Alexander Lippert
  • Patent number: 9662684
    Abstract: The application describes several methods and an apparatus for treatment of a substrate. In those methods, at least one liquid is applied thereto and electromagnetic radiation is generated in the liquid by means of radiation before applying the liquid to the substrate. Electromagnetic radiation is introduced into the film such that at least a portion of the radiation reaches the substrate surface. In another method for changing the surface characteristics of a substrate having an at least partially hydrophobic substrate surface such that at least a portion of said surface gets a hydrophilic surface characteristic, a liquid is applied to at least the partial area of the surface of the substrate, and UV radiation of a predetermined wavelength is guided onto at least the partial area of the surface of said substrate.
    Type: Grant
    Filed: March 15, 2010
    Date of Patent: May 30, 2017
    Assignee: Suss Microtec Photomask Equipment GmbH & Co. KG
    Inventors: Uwe Dietze, Peter Dress, Sherjang Singh
  • Patent number: 9662687
    Abstract: A cleaning method involves: disposing in a cleaning liquid held in a cleaning tank an object to be cleaned; and ultrasonically vibrating the cleaning liquid via an intermediate medium in contact with the cleaning tank to clean said object, the ultrasonically vibrating involving: ultrasonically vibrating the cleaning liquid with the cleaning liquid and the intermediate medium allowing sonic velocities, respectively, having a first difference; and ultrasonically vibrating the cleaning liquid with the cleaning liquid and the intermediate medium allowing sonic velocities, respectively, having a second difference different from the first difference.
    Type: Grant
    Filed: November 3, 2015
    Date of Patent: May 30, 2017
    Assignee: SILTRONIC AG
    Inventors: Yoshihiro Mori, Teruo Haibara, Etsuko Kubo, Masashi Uchibe
  • Patent number: 9659796
    Abstract: An apparatus for manufacturing integrated circuits on a wafer includes a polish pad; a rinse arm movable over the polish pad; and a post-polish cleaner. The post-polish cleaner includes a brush for brushing the wafer; and a nozzle aiming at the wafer. The apparatus further includes a mixer configured to mix an additive and de-ionized water; and a pipe connecting the mixer to at least one of the rinse arm and the nozzle.
    Type: Grant
    Filed: July 24, 2008
    Date of Patent: May 23, 2017
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Cheng Hsun Chan, Ming-Che Ho
  • Patent number: RE46427
    Abstract: An cleaning composition and process for cleaning post-chemical mechanical polishing (CMP) residue and contaminants from a microelectronic device having said residue and contaminants thereon. The cleaning compositions include novel corrosion inhibitors. The composition achieves highly efficacious cleaning of the post-CMP residue and contaminant material from the surface of the microelectronic device without compromising the low-k dielectric material or the copper interconnect material.
    Type: Grant
    Filed: January 13, 2015
    Date of Patent: June 6, 2017
    Assignee: Entegris, Inc.
    Inventors: David Angst, Peng Zhang, Jeffrey Barnes, Prerna Sonthalia, Emanuel Cooper, Karl Boggs