Abstract: A non-abrading method to facilitate bonding of semiconductor components, such as silicon wafers, that have micro structural defects in a bonding interface surface. In a preferred method, micro structural defects are removed by forming an oxide layer on the bonding interface surface to a depth below the level of the defect, and then removing the oxide layer to expose a satisfactory surface for bonding, thereby increasing line yield and reducing scrap triggers in fabrication facilities.

Abstract: Megasonic cleaning systems and methods of using megasonic pressure waves to impart cavitation energy proximate a surface of a microelectronic substrate are disclosed herein. In one embodiment, a megasonic cleaning system includes a process tank for containing a liquid, a support element for carrying a substrate submerged in the liquid, and first and second transducers positioned in the tank. The first transducer is further positioned and/or operated to initiate cavitation events in a bulk portion of the liquid proximate a surface of the substrate. The second transducer is further positioned and/or operated to control an interface of fluid friction between the substrate and the bulk portion of the liquid.

Abstract: Al post-etch residue removal composition doped with an alkanoic acid of the formula R—COOH, where R can be a linear or branched alkyl group in the form of CnH2n+1, where n is from 4 to 19, simultaneously passivates exposed Al surfaces while removing post-etch residues.

Abstract: The present invention provides a method for cleansing a glass substrate of a TFT-LCD, includes the following steps: providing an ultrasonic cleansing machine, a glass substrate in-feeding conveyor, and a glass substrate out-feeding conveyor, wherein the ultrasonic cleansing machine includes a cleansing tank, a cleansing liquid contained in the cleansing tank, and first and second ultrasonic frequency generators arranged in the cleansing tank and having different frequencies; conveying a glass substrate with the glass substrate in-feeding conveyor into the cleansing tank; immersing the glass substrate in the cleansing liquid of the cleansing tank; generating ultrasonic waves of different frequencies with the first and second ultrasonic frequency generators to be applied to the cleansing liquid to effect ultrasonic cleansing of the glass substrate; and conveying the cleansed glass substrate out of the cleansing tank with the glass substrate out-feeding conveyor.

Abstract: The molecular etcher carbonyl fluoride (COF2) or any of its variants, are provided for, according to the present invention, to increase the efficiency of etching and/or cleaning and/or removal of materials such as the unwanted film and/or deposits on the chamber walls and other components in a process chamber or substrate (collectively referred to herein as “materials”). The methods of the present invention involve igniting and sustaining a plasma, whether it is a remote or in-situ plasma, by stepwise addition of additives, such as but not limited to, a saturated, unsaturated or partially unsaturated perfluorocarbon compound (PFC) having the general formula (CyFz) and/or an oxide of carbon (COx) to a nitrogen trifluoride (NF3) plasma into a chemical deposition chamber (CVD) chamber, thereby generating COF2. The NF3 may be excited in a plasma inside the CVD chamber or in a remote plasma region upstream from the CVD chamber.

Abstract: Aqueous alkaline composition free from organic solvents and metal ion-free silicates, the said compositions comprising (A) a thioamino acid having at least one primary amino group and at least one mercapto group, (B) a quaternary ammonium hydroxide, (C) a chelating and/or corrosion inhibiting agent selected from the group consisting of aliphatic and cycloaliphatic amines having at least two primary amino groups, and aliphatic and cycloaliphatic amines having at least one hydroxy group, (D) a nonionic surfactant selected from the group of acetylenic alcohols, alkyloxylated acetylenic alcohols and alkyloxylated sorbitan monocarboxylic acid mono esters; the use of the alkaline composition for the processing of substrates useful for fabricating electrical and optical devices; and a method for processing substrates useful for fabricating electrical and optical devices making use of the said aqueous alkaline composition.

Abstract: Methods and apparatus for a movable megasonic wafer probe. A method is disclosed including positioning a movable probe on a wafer surface, the movable probe having an open bottom portion that exposes a portion of the wafer surface; applying a liquid onto the wafer surface through a bottom portion of the movable probe; and moving the movable probe at a predetermined scan speed to traverse the wafer surface, applying the liquid to the wafer surface while moving over the wafer surface. In additional embodiments the method includes providing a transducer for applying megasonic energy to the wafer surface. Apparatus embodiments are disclosed including the movable megasonic wafer probe.

Abstract: A composition for removing photoresist and bottom anti-reflective coating from a semiconductor substrate is disclosed. The composition may comprise a nontoxic solvent, the nontoxic solvent having a flash point above 80 degrees Celsius and being capable of dissolving acrylic polymer and phenolic polymer. The composition may further comprise Tetramethylammonium Hydroxide (TMAH) mixed with the nontoxic solvent.

Abstract: Methods and systems for cleaning corrosion product of a metallic capping layer from the surface of a substrate are provided. According to one embodiment, a treatment solution includes a surfactant, a complexing agent, and a pH adjuster. The surfactant is configured to enhance wetting of the substrate surface, and inhibit further corrosion of the capping layer. The complexing agent is configured to bind to metal ions which have desorbed from the substrate surface. The pH adjuster is configured to adjust the pH to a desired level, so as to promote desorption of the corrosion product from the substrate surface.

Abstract: A post metal chemical-mechanical planarization (CMP) cleaning process for advanced interconnect technology is provided. The process, which follows CMP, combines an acidic clean and a basic clean in sequence. The process can achieve a more than 60% reduction in CMP defects, such as polish residues, foreign materials, slurry abrasives, scratches, and hollow metal, relative to an all-basic clean process. The process also eliminates the circular ring defects that occur intermittently during roller brush cleans within a roller brush clean module.

Abstract: A method for removing solder balls (103) from a chip (102) comprises: immersing a chip (102) provided with solder balls (103) in a corrosive solution, the corrosive solution being prepared with a nitric acid solution having a concentration of 70% and deionized water at a volume ratio of 1:1 (301); taking out the chip (102) for rinsing (302); and placing the chip (102) into a container filled with water for ultrasonic oscillation cleaning (303). The corrosive solution prepared with a nitric acid solution having a concentration of 70% and deionized water at a volume ratio of 1:1 can completely remove the solder balls (103) from the surface of the chip (102) without affecting pads (201).

Abstract: A post-W CMP cleaning solution consists of carboxylic acid and deionized water. The carboxylic acid may be selected from the group consisting of (1) monocarboxylic acids; (2) dicarboxylic acids; (3) tricarboxylic acids; (4) polycarboxylic acids; (5) hydroxycarboxylic acids; (6) salts of the above-described carboxylic acids; and (7) any combination thereof. The post-W CMP cleaning solution can work well without adding any other chemical additives such as surfactants, corrosion inhibitors, pH adjusting agents or chelating agents.

Abstract: A method of cleaning copper material surfaces in ultra large scale integrated circuits after polishing, the method including: a) mixing and stirring between 1 and 4 wt. % of a surfactant, between 0.5 and 3 wt. % of a chelating agent, between 0.1 and 5 wt. % of a corrosion inhibitor, and deionized water, to yield a water soluble cleaning solution with pH value of between 7.4 and 8.2; and b) washing the copper material surfaces using the cleaning solution after alkaline chemical-mechanical polishing under following conditions: between 2000 and 3000 Pa of pressure; between 1000 and 5000 mL/min of flow rate; and at least between 0.5 and 2 min of washing time.

Abstract: Cleaning compositions suitable for cleaning microelectronic structures having silicon dioxide, low-k or high-k di-electrics and copper or aluminum metallizations contain a polar organic solvent selected from amides, sulfones, sulfolenes, selenones and saturated alcohols and a strong alkaline base.

Abstract: A method of operating one or more back end circuits of a plasma processing system, comprising: prior to a front end module receiving one or more wafers to be processed, receiving preliminary data at a back end circuit, wherein the preliminary data indicates a recipe and a predetermined number, the predetermined number indicating a number of wafers to be processed; determining whether a plasma processing chamber is ready for processing; and if the chamber is ready for processing and via the back end circuit, selecting a load lock, based on the predetermined number, instructing the front end module to pull the one or more wafers into the load lock, enabling the chamber to process a first wafer of the one or more wafers according to the recipe, and subsequent to the processing of the first wafer, instructing the front end module to remove the first wafer from the chamber.

Abstract: Methods for stabilizing a ceramic contact surface of an electrostatic chuck, wherein the electrostatic chuck can be disposed within a reaction chamber of a semiconductor wafer processing assembly including a radio frequency source and a coolant gas supply are described herein. The method may include: clamping electrostatically a conditioning wafer to the ceramic contact surface of the electrostatic chuck; and cycling an output power of the radio frequency source and an output pressure of the coolant gas supply for multiple hot/cold cycles. Each of the hot/cold cycles includes a hot abrasion state and a cold abrasion state. At the hot abrasion state, the output power of the radio frequency source is relatively high and the output pressure of the coolant gas supply is relatively low to yield a relatively hot conditioning wafer.

Abstract: The present invention provides a cleaning agent for a substrate and a cleaning method thereof, which can effectively remove fine particles (particles) present on a surface of substrate or impurities derived from various kinds of metals (metallic impurities), without causing roughness surface of a substrate, in particular, a semiconductor substrate, and without causing corrosion or oxidation of metal wirings, in particular, copper wirings, provided on a surface of substrate, and can further remove at the same time a carbon defect present on a surface of substrate, without removing a metal corrosion inhibitor—Cu film, in particular, a Cu-BTA film.

Abstract: A liquid agent for the surface treatment of monocrystalline wafers, which contains an alkaline etching agent and also at least one low-volatile organic compound. Systems of this type can be used both for the cleaning, damage etch and texturing of wafer surfaces in a single etching step and exclusively for the texturing of silicon wafers with different surface quality, whether it now be wire-sawn wafers with high surface damage or chemically polished surfaces with minimum damage density.

Abstract: A water-rich hydroxylamine formulation for photoresist and post-etch/post-ash residue removal in applications wherein a semiconductor substrate comprises aluminum. The cleaning composition comprises from about 2 to about 15% by wt. of hydroxylamine; from about 50 to about 80% by wt. of water; from about 0.01 to about 5.0% by wt. of a corrosion inhibitor; from about 5 to about 45% by wt. of a component selected from the group consisting of: an alkanolamine having a pKa<9.0, a water-miscible solvent, and a mixture thereof. Employment of such composition exhibits efficient cleaning capability for Al substrates, minimal silicon etch while protecting aluminum for substrates comprising both materials.

Abstract: Disclosed herein is a resist stripping composition, which has an excellent ability of stripping a residual resist remaining after dry or wet etching at the tune of forming patterns in a process of manufacturing a flat panel display substrate.

Abstract: Methods and apparatus are provided for cleaning a substrate (e.g., wafer) in the fabrication of semiconductor devices utilizing a composition of magnetic particles dispersed within a base fluid to remove contaminants from a surface of the substrate.

Abstract: Methods for reducing the contamination of a gas distribution plate are provided. In one embodiment, a method for processing a substrate includes transferring the substrate into a chamber, performing a treating process on the substrate, and providing a purge gas into the chamber before or after the treating process to pump out a residue gas relative to the treating process from the chamber. The treating process includes distributing a reactant gas into the chamber through a gas distribution plate.

Abstract: Methods for cleaning a surface of a photomask and for increasing the useable lifetime of the photomask are disclosed. One method includes, a first wafer print processing using a photomask and a pellicle disposed across the photomask, and cleaning the photomask. The cleaning the photomask includes directing a laser beam through the pellicle toward the photomask, the laser beam having a wavelength that is substantially equal to a local maximum of an absorption spectrum of the photomask, heating the photomask with the laser beam, and transferring heat from the photomask to a contaminant disposed on the photomask, thereby thermally decomposing the contaminant.

Abstract: A method for reducing contaminants in a semiconductor device is provided. The method includes cleaning the semiconductor substrate. The cleaning includes rotating the semiconductor substrate and dispersing an aerosol at a predetermined temperature to a surface of the semiconductor substrate or a layer formed on the substrate to be cleaned. The aerosol includes a chemical having a predetermined pressure and a gas having a predetermined flow rate.

Abstract: An object of the present invention is to provide a semiconductor surface treating agent composition, which can realize easy removing of an anti-reflection coating layer in a production process of a semiconductor device or the like at a low temperature in a short time, a method for treating a semiconductor surface using the same, and further a semiconductor surface treating agent composition, which can realize not only removing of both layer of an anti-reflection coating layer and a resist layer, but can realize even removing of a cured resist layer produced in an etching process, and a method for treating a semiconductor surface using the same. The semiconductor surface treating agent composition of the present invention is characterized by comprising a compound which generates a fluorine ion in water, a carbon radical generating agent, and water and optionally an organic solvent, and the method for treating a semiconductor surface of the present invention is characterized by using the composition.

Abstract: A surface cleaning apparatus comprising a chamber, and a thermal transfer device. The chamber is capable of holding a semiconductor structure therein. The thermal transfer device is connected to the chamber. The thermal transfer device has a surface disposed inside the chamber for contacting the semiconducting structure and controlling a temperature of the semiconductor structure in contact with the surface. The thermal transfer device has a thermal control module connected to the surface for heating and cooling the surface to thermally cycle the surface. The thermal control module effects a substantially immediate thermal response of the surface when thermally recycling the surface.

Abstract: Apparatus and methods for removing particle contaminants from a surface of a substrate includes coating a layer of a viscoelastic material on the surface. The viscoelastic material is coated as a thin film and exhibits substantial liquid-like characteristic. An external force is applied to a first area of the surface coated with the viscoelastic material such that a second area of the surface coated with the viscoelastic material is not substantially subjected to the applied force. The force is applied for a time duration that is shorter than a intrinsic time of the viscoelastic material so as to access solid-like characteristic of the viscoelastic material. The viscoelastic material exhibiting solid-like characteristic interacts at least partially with at least some of the particle contaminants present on the surface.

Abstract: An object of the invention is to effectively remove particles on the glass substrate surfaces, even in the case wherein abrasive particles having a small particle size is used in the polishing step of the glass substrate and a supersonic treatment is performed at a high frequency at the supersonic cleaning step after the polishing step. In a manufacturing method of a glass substrate for a magnetic disk comprising a polishing step for performing polishing of the glass substrate and a supersonic cleaning step for performing supersonic cleaning of the glass substrate after the polishing step, the polishing step uses abrasive particles having a particle size of 10 nm to 30 nm and a first supersonic cleaning is performed at a frequency of 300 kHz to 1,000 kHz to form secondary particles and then a second supersonic cleaning is performed at a frequency of 30 kHz to 100 kHz in the supersonic cleaning step.

Abstract: A bevel/backside polymer removing method removes multi-layered bevel/backside polymers adhering to a bevel surface and a backside of a target substrate. The multi-layered bevel/backside polymers include an inorganic layer and an organic layer. The bevel/backside polymer removing method includes mechanically destroying the multi-layered bevel/backside polymers and heating residues of the multi-layered bevel/backside polymers mechanically destroyed.

Abstract: A method of manufacturing a semiconductor device includes: holding a semiconductor substrate with a surface inclined with respect to the vertical direction and the horizontal direction; and immersing the semiconductor substrate in a cleaning solution including an acid.

Abstract: A cleaning composition which is capable of removing both organic soiling and particulate soiling adhered to a substrate for an electronic device with a high degree of cleanliness, and which also has minimal impact on the environment, as well as a method of cleaning a substrate for an electronic device. The present invention relates to a cleaning composition used for cleaning a substrate for an electronic device including a water-soluble salt (A) containing a transition metal, a chelating agent (B) and a peroxide (C), wherein the amount of the chelating agent (B) is not less than 0.5 molar equivalents relative to the amount of the water-soluble salt (A) containing a transition metal.

Abstract: A method of cleaning a substrate having a metal layer including copper or a copper-containing alloy, the method including cleaning the substrate using a cleaning liquid that includes a mercapto compound represented by one or both of the following formulas (1) and (2), and a solvent containing water and a water-soluble organic solvent: in which R represents a substituent group; m is an integer of 1 to 3; and n is an integer of 0 to 3, when m is 2 or 3, R may be the same or different; HS—(CH2)x—OH??(2), in which x is an integer of no less than 3.

Abstract: Provided herein are etching, cleaning and drying methods using a supercritical fluid, and a chamber system for conducting the same. The etching method includes etching the material layer using a supercritical carbon dioxide in which an etching chemical is dissolved, and removing an etching by-product created from a reaction between the material layer and the etching chemical using a supercritical carbon dioxide in which a cleaning chemical is dissolved. Methods of manufacturing a semiconductor device are also provided.

Abstract: One embodiment of the present invention is a method of fabricating an integrated circuit. The method includes providing a substrate having a metal and dielectric damascene metallization layer and depositing substantially on the metal a cap. After deposition of the cap, the substrate is cleaned with a solution comprising an amine to provide a pH for the cleaning solution of 7 to about 13. Another embodiment of the presented invention is a method of cleaning substrates. Still another embodiment of the present invention is a formulation for a cleaning solution.

Abstract: An ultrasonic cleaning apparatus according to the present invention comprises a plurality of cleaning tanks configured to store a cleaning liquid, an object-to-be-processed holder capable of being inserted into each cleaning tank, the object-to-be-processed holder being configured to hold an object to be processed and to immerse the object to be processed into the cleaning liquid, a vibrator disposed on each cleaning tank, a single ultrasonic oscillator configured to make each vibrator ultrasonically vibrate, an output switch interposed between the ultrasonic oscillator and the vibrator of each respective cleaning tank, the output switch being configured to switch the vibrator that is connected to the ultrasonic oscillator, and a control device configured to control the ultrasonic oscillator and the output switch, wherein the control device controls the ultrasonic oscillator and the output switch such that a timing at which the vibrator of one of the cleaning tanks is made to ultrasonically vibrate, and a tim

Abstract: A method for manufacturing integrated circuit devices. In one aspect, the invention may be a method of manufacturing integrated circuit devices comprising: supporting a semiconductor wafer in a substantially horizontal orientation; providing a transducer assembly comprising a probe having a forward portion, a rear portion and no more than one piezoelectric transducer element coupled to the rear portion; supporting the transducer assembly so that the forward portion is adjacent but spaced from a first surface of the semiconductor wafer; rotating the semiconductor wafer; applying a fluid to the first surface of the semiconductor wafer to form a film of the fluid between a portion of the forward portion and the first surface of the semiconductor wafer; and transmitting acoustical energy generated by the piezoelectric transducer element into the film of the fluid via the forward portion, the acoustical energy loosening particles from the first surface of the semiconductor wafer.

Abstract: The present invention is a method of cleaning to removal residue in semiconductor manufacturing processing, comprising contacting a surface to be cleaned with an aqueous formulation having a polymer selected from the group consisting of acrylamido-methyl-propane sulfonate) polymers, acrylic acid-2-acrylamido-2-methylpropane sulfonic acid copolymer and mixtures thereof and a quaternary ammonium hydroxide having greater than 4 carbon atoms or choline hydroxide with a non-acetylinic surfactant. The present invention is also a post-CMP cleaning formulation having the components set forth in the method above.

Abstract: An ultrasonic wave generating apparatus includes: a generator including an electric power supply, a controller that generates a control signal, a liquid crystal display indicator, and a transducer drive circuit; and transducer portions. The generator includes: the controller having an internal memory or a port to which an external memory is inserted, and formed of a microcomputer to control the generator and the transducer portions; thyristor portions that are arranged respectively in the front and rear ends of the transducer portions, in which two thyristors are connected in series in the respective thyristor portions; snubber circuit portions that are connected in parallel with the respective thyristor portions; at least one transducer that is connected with the controller and is included in the transducer portions; and choke coils that are connected with one end of the respective transducers in the transducer portions.

Abstract: Various embodiments herein include at least one of systems, methods, and software to facilitate automatic solar power surface-cleaning Such embodiments include at least one automatic solar power surface-cleaning robot that uses no water or external power, continuously cleans the solar power surfaces and requires no maintenance or external power. The solar power surface-cleaning robot is easy to retrofit in an existing solar power generation plant. An automatic solar power surface-cleaner uses high-voltage AC electric fields to sweep particulates and debris as the robot traverses the surface to be cleaned. Photovoltaic solar cells supply the power for the robot. No external power is required. The robot clamps to the surface to be cleaned at the edges using motor driven rollers. Electronics inside the device generate high-voltage AC that is applied to conductors close to the surface to be cleaned.

Abstract: A cleaning agent for a silicon wafer (a first cleaning agent) contains at least a water-based cleaning liquid and a water-repellent cleaning liquid for providing at least a recessed portion of an uneven pattern with water repellency during a cleaning process. The water-based cleaning liquid is a liquid in which a water-repellent compound having a reactive moiety chemically bondable to Si element in the silicon wafer and a hydrophobic group, and an organic solvent including at least an alcoholic solvent are mixed and contained. With this cleaning agent, the cleaning process which tends to induce a pattern collapse can be improved.

Abstract: A method of monitoring a surfactant in a microelectronic process is disclosed. Specifically, the monitoring of a surfactant occurs by studying the fluorescence or electromagnetic emission of a sample collected from a microelectronic process.

Abstract: A cleaning composition and process for cleaning post-chemical mechanical polishing (CMP) residue and contaminants from a microelectronic device having said residue and contaminants thereon. The cleaning compositions are substantially devoid of amine and ammonium-containing compounds, e.g., quaternary ammonium bases. The composition achieves highly efficacious cleaning of the post-CMP residue and contaminant material from the surface of the microelectronic device without compromising the low-k dielectric material or the copper interconnect material.

Abstract: A residue-removing solution for removing residues after a dry process, which includes an amine salt of a monocarboxylic acid and/or a salt of a polycarboxylic acid that forms a 7- or more-membered ring chelate with copper, and water, the residue-removing solution containing aqueous solution (A) or (B) as described herein. Also disclosed is a method for removing residues present on a semiconductor substrate after dry etching and/or ashing. Further, a method for manufacturing semiconductor devices is further disclosed, which includes subjecting a semiconductor substrate having Cu as an interconnect material, and a low dielectric constant film as an interlayer dielectric material, to dry etching and/or ashing; and bringing the processed semiconductor substrate into contact with the above residue-removing solution.

Abstract: A process/method for cleaning wafers that eliminates and/or reduces pitting caused by standard clean 1 by performing a pre-etch and then passivating the wafer surface prior to the application of the standard clean 1. The process/method may be especially useful for advanced front end of line post-CPM cleaning. In one embodiment, the invention is a method of processing a substrate comprising: a) providing at least one substrate; b) etching a surface of the substrate by applying an etching solution; c) passivating the etched surface of the substrate by applying ozone; and d) cleaning the passivated surface of the substrate by applying an aqueous solution comprising ammonium hydroxide and hydrogen peroxide.

Abstract: Methods for cleaning a surface of a photomask and for increasing the useable lifetime of the photomask are disclosed. One method includes, a first wafer print processing using a photomask and a pellicle disposed across the photomask, and cleaning the photomask. The cleaning the photomask includes directing a laser beam through the pellicle toward the photomask, the laser beam having a wavelength that is substantially equal to a local maximum of an absorption spectrum of the photomask, heating the photomask with the laser beam, and transferring heat from the photomask to a contaminant disposed on the photomask, thereby thermally decomposing the contaminant.

Abstract: Embodiments of the invention generally relate to a method of cleaning a substrate and a substrate processing apparatus that is configured to perform the method of cleaning the substrate. More specifically, embodiments of the present invention relate to a method of cleaning a substrate in a manner that reduces or eliminates the negative effects of line stiction between semiconductor device features. Other embodiments of the present invention relate to a substrate processing apparatus that allows for cleaning of the substrate in a manner that reduces or eliminates line stiction between semiconductor device features formed on the substrate.

Abstract: Provided is a method for cleaning an on implanted resist layer or a substrate after an ashing process. A duty cycle for turning on and turning off flows of a treatment liquid using two or more nozzles is generated. The substrate is exposed to the treatment liquid comprising a first treatment chemical, the first treatment chemical with a first film thickness, temperature, total flow rate, and first composition. A portion of a surface of the substrate is concurrently irradiated with UV light while controlling the selected plurality of cleaning operating variables in order to achieve the two or more cleaning objectives.

Abstract: A method for manufacturing a semiconductor device includes forming a patterned photoresist layer over a substrate, performing a plasma ashing process to the patterned photoresist layer, thereby removing a portion of the patterned photoresist layer, exposing the patterned photoresist layer to broadband ultraviolet radiation and ozone, thereby removing other portions of the patterned photoresist layer, and performing a cleaning of the patterned photoresist layer after exposing the patterned photoresist layer to broadband ultraviolet radiation and ozone.

Abstract: Provided is a method and system for cleaning a substrate with a cleaning system comprising a pre-treatment system using an atomic oxygen generator. The substrate includes a layer to be cleaned and an underlying dielectric layer having a k-value. Pre-treatment gas comprising oxygen and an inert gas are delivered into an atomic oxygen generator, generating a process gas containing atomic oxygen. A portion of a surface of the substrate is exposed to the process gas while controlling two or more cleaning operating variables to ensure meeting two or more cleaning objectives and ensure completion of cleaning in the pre-treatment process time. In an embodiment, cleaning of the substrate in the pre-treatment process is set at less than 100 percent and a subsequent wet cleaning process is used to complete the substrate cleaning. In another embodiment, the pre-treatment system is configured to complete cleaning of the substrate.

Abstract: Methods for processing substrates in twin chamber processing systems having first and second process chambers and shared processing resources are provided herein. In some embodiments, a method may include providing a substrate to the first process chamber of the twin chamber processing system, wherein the first process chamber has a first processing volume that is independent from a second processing volume of the second process chamber; providing one or more processing resources from the shared processing resources to only the first processing volume of the first process chamber; and performing a process on the substrate in the first process chamber.