Abstract: A dry cleaning method for an apparatus for depositing a thin film that deposits an Al-containing metal film and an Al-containing metal nitride film is provided. The method includes maintaining a temperature inside of chamber of the apparatus for depositing a thin film at 430° C. or higher and cleaning the inside of the chamber by supplying a cleaning gas including Cl2 into the chamber. When it is difficult to maintain the temperature inside the chamber at 430° C. or higher, the method includes cleaning the inside of the chamber by using a cleaning gas including Cl2 plasma. Accordingly, the apparatus for depositing the thin film that deposits a titanium aluminum nitride (TiAlN) film and a similar type thin film can be effectively cleaned without having remaining products and particles.

Abstract: A method of remote plasma cleaning a processing chamber of CVD equipment, which has high cleaning rates, low cleaning operational cost and high efficiency, is provided. The method comprises supplying cleaning gas to the remote plasma-discharge device; activating the cleaning gas inside the remote plasma-discharge device; and bringing the activated cleaning gas into the processing chamber and which is characterized in that a mixed gas of F2 gas and an inert gas are used as the cleaning gas. A concentration of the F2 gas is 10% or higher. The F2 gas, which is a cleaning gas, is supplied to the remote plasma-discharge device from an F2 gas cylinder by diluting F2 gas at a given concentration by an inert gas.

Abstract: The invention relates to a flushing device for a sealing system on a housing element with a sealing surface and an associated closing element with a radially outer elastic seal, comprising at least one source for a flushing medium, an annular channel arranged in the housing element, and an annular gap, out of which the flushing medium can pass, the annular gap being closed by the radially outer elastic seal in the closed position of the closing element. At least one further closable outlet is provided for the flushing medium on the annular channel. At least one side of the opening of the annular gap is of undulating or serrated design. In accordance with the process for using the flushing device, with the closing element closed and the annular gap closed and with the further outlet open, a flushing medium is let into the annular channel from the source and is let out via the further outlet.

Abstract: The present invention relates to a mobile or stationary waste container cleaning system used for residential, commercial and industrial waste, garbage, trash, storage or operations containers or receptacles. Other applications include, but are not limited to cleaning of chemical drums, grease dumpsters (e.g. behind restaurants), rain barrels and non-uniform residential, commercial or industrial dumpsters or waste containers. The container cleaning system can alternatively be used for rural areas, farms or ranches.

Abstract: In a parallel flat plate type plasma CVD apparatus, plasma damage of constituent parts in a reaction chamber due to irregularity of dry cleaning in the reaction chamber is reduced and the cost is lowered. In the parallel flat plate type plasma CVD apparatus in which high frequency voltages of pulse waves having mutually inverted waveforms are applied to an upper electrode and a lower electrode, and the inversion interval of the pulse wave can be arbitrarily changed, the interior of the reaction chamber is dry cleaned.

Abstract: A solids removal system for use in removing sand and silt from well production fluids. The system has a manifold assembly provided with jetting nozzles, which is installed in a liquid and solids-containing vessel, where solids have settled in the walls. The jetting nozzles deliver, in a pre-determined sequence, a solids-dislodging fluid, causing the solids to become suspended in the fluid. The dislodged solids and fluid are then extracted by pump from the vessel and directed to a solid-fluid separator. Solids-free fluid is returned for re-re-circulation through the vessel, while the solids are moved to a containment location.

Abstract: A method for plasma cleaning a CVD reactor chamber including providing a plasma enhanced CVD reactor chamber comprising residual deposited material; performing a first plasma process comprising an oxygen containing plasma; performing a second plasma process comprising an argon containing plasma; and, performing a third plasma process comprising a fluorine containing plasma.

Abstract: The invention relates to a method, whereby a cleaning and disinfecting circuit is established for the vacuum channels of an upper sealing tool (1) and a lower sealing tool (2). In the present case, the vacuum pump (3) is switched off and the connecting line to the sealing station is sealed or disconnected from the flanges at the point (10). The vacuum channels of the upper sealing station (1) are connected to the vacuum channels of the lower sealing tool (2) by means of an adapter (13) in a fluid-tight manner. The fluid circuit is closed by a pump (14), a fluid container (15) and the associated pipes, which are connected to the flanges (11), (12). Said pump (14) pumps a cleaning and disinfecting fluid, in the present case active chlorine, into the vacuum channels of the upper sealing station (1).

Abstract: In a chamber (11), a SiOF film is formed on a wafer W using a plasma CVD method. A film remaining inside the chamber (11) is cleaned up using a gas containing NF3. A manometer (28) is prepared for the chamber (11). An end point of cleaning of the chamber (11) is detected by monitoring the pressure inside the chamber (11).

Abstract: In one embodiment of the invention, a method of cleaning a workpiece is disclosed. The method comprises providing a mobile flushing unit and servicing the workpiece as follows: a) connecting a flexible hose of the mobile flushing unit to one end of the workpiece and connecting another flexible hose of the mobile flushing unit to a second end of the workpiece; b) flowing compressed air through each hose and the workpiece; c) pumping a cleaning fluid through each hose and the workpiece for a predetermined amount of time; d) ceasing cleaning fluid flow, followed by purging with air to remove the cleaning fluid from the workpiece; e) pumping water through each hose and the workpiece for a predetermined amount of time; f) ceasing water flow, following by another purge with air to remove the water from the workpiece; and g) disconnecting each hose from the workpiece.

Abstract: A method of installing an inspection port on a pipe having asbestos insulation extending therearound in which the method has the steps of positioning the inspection port within a glove bag, affixing an opening of the glove bag onto a surface of the pipe, removing a section of asbestos insulation from the pipe, installing the inspection port onto the pipe within an area of the removed section, and removing the glove bag from the surface of the pipe. An air flow through the bag removes heat from the interior of the glove bag. The interior of the glove bag is maintained at a pressure below ambient.

Abstract: There are disclosed a production apparatus for producing a gallium nitride semiconductor film by HVPE process, a cleaning apparatus for cleaning exhaust gas coming from the above apparatus and an overall production plant for producing a gallium nitride semiconductor by HVPE process. Therein exhaust piping for exhaust gas in the production apparatus, introduction piping for the cleaning apparatus and exhaust gas piping which connects the production apparatus and the cleaning apparatus are each composed of an electroconductive corrosion-resistant material and are each electrically grounded, thereby surely preventing electrostatic charging due to friction between ammonium chloride powders in the exhaust gas and inside walls of exhaust gas piping, and markedly enhancing operational safety.

Abstract: The present invention discloses a method for the removal of a number of molecular contaminants from surfaces within a device. A purge gas containing oxygen and/or water is introduced into the interior of the device, contacting at least a portion of the interior surfaces. A contaminated purge gas is produced by transferring a portion of the contamination from the interior surfaces into the purge gas. The contaminated purge gas is removed from the device and the process is continued until the contaminant concentration in the contaminated purge gas is below a predetermined level.

Abstract: Disclosed is a cleaning agent for heater tubes, which is capable of eliminating deposits such as soot particulates in tubes installed in industrial heaters that typically use oil, coal or gas. The cleaning agent of the present invention is prepared by formulating a chemical composition comprising ammonium nitrate into pellets. Also, the present invention discloses a method of cleaning heater tubes using the cleaning agent. When being utilized for cleaning the heater tubes, the cleaning agent can improve mechanical and chemical cleaning effects, thus shortening of working time and reducing a required amount of the chemical composition, as well as preventing rapid evaporation of the chemical composition, thus increasing cleaning effect. In addition, the cleaning agent can eliminate the cementing effect of sulfur oxides or vanadic oxides in the heater tubes and thus control stably emission of NOx, by selectively containing other additives including magnesium and urea.

Abstract: A cleaning preparation method, comprising: providing a part with an internal cavity, an opening, and foreign material within the cavity; and creating an additional opening in the part adjacent the foreign material. A cleaning method, comprising: providing a part with an internal cavity and an opening; creating an additional opening in the part; and flushing the cavity with a fluid. The additional opening acts as an exit or entrance for the fluid. A repair method, comprising: providing a part with an internal cavity, an opening and foreign material within the cavity; creating an additional opening in the part; and removing the foreign material through the additional opening. A part, comprising: an exterior surface; an internal cavity; an opening through the surface to the cavity; and a repaired section of the surface, which was an additional opening that provided a temporary exit or entrance to the cavity for foreign material removal.

Abstract: Methods and compositions for on-line cleaning of internal surfaces of selected sections of a hydrocarbon fuel burning gas turbine and associated heat recovery equipment, during operation. Cleaning solutions containing graphite and/or molybdenum-based particles and oil soluble corrosion inhibitors, aromatic solvents, and surfactants are selectively introduced directly into the combustion chamber (combustor) of the gas turbine, into the fuel stream, water washing system, or the combustion air system (hot gas path). The cleaning process dislodges unwanted ash deposit buildup and, thereby restores the gas turbine to rated power. When introduced into the compressor section, the particles impinge on the metal surfaces, cleaning them prior to entering the hot gas section where the process may be repeated. They may also be carried through the exhaust to additionally clean attendant heat recovery equipment, if present.

Abstract: A composition and method for cleaning surfaces having deposits, such as drink water tanks, supply water wells, water filter systems, and distributor water lines. The composition contains in combination a cleaning solution and a disinfectant, such as hydrogen peroxide or peracidic acid. The cleaning solution can includes hydrochloric acid and/or phosphoric acid in combination with inhibitors, dyes and water. The composition is applied to deposits which have formed on these surfaces.

Abstract: Methods for cleaning a chamber of semiconductor device manufacturing equipment are disclosed. An illustrated method comprises supplying cleaning gas into a chamber to start a cleaning process; detecting the intensity of a wavelength for the cleaning gas; fixing a valve at a predetermined position to control the pressure in the chamber; detecting the pressure in the chamber during some period of the cleaning time, the cleaning time being from the beginning of the cleaning process to the time when the intensity of the wavelength is settled at a predetermined value; and stopping supplying the cleaning gas into the chamber to complete the cleaning process.

Abstract: In a state of the inside of a treatment chamber of treatment equipment being evacuated, therein a cleaning gas containing trifluoroaceticacid (TFA) as a cleaning agent is supplied. Metal such as copper used in the formation of an interconnection or an electrode and stuck on an inner wall surface of the treatment chamber, when coming into contact with the cleaning agent (TFA) in the cleaning gas, without forming an oxide or a metallic salt, is directly complexed. The complex is sublimed due to the evacuation and is exhausted outside the treatment chamber. Accordingly, at less labor and low cost, the cleaning can be efficiently implemented.

Abstract: The invention relates to a gas for removing deposits by a gas-solid reaction. This gas includes a hypofluorite that is defined as being a compound having at least one OF group in the molecule. Various deposits can be removed by the gas, and the gas can easily be made unharmful on the global environment after the removal of the deposits, due to the use of a hypofluorite. The gas may be a cleaning gas for cleaning, for example, the inside of an apparatus for producing semiconductor devices. This cleaning gas comprises 1–100 volume % of the hypofluorite. Alternatively, the gas of the invention may be an etching gas for removing an unwanted portion of a film deposited on a substrate. The unwanted portion can be removed by this etching gas as precisely as originally designed, due to the use of a hypofluorite. The invention further relates to a method for removing a deposit by the gas.

Abstract: A method for sanitizing scuba diving equipment including aqua lungs, wet-suits, fins, caps and masks comprises exposing confined parts of the gear such as hoses, pressure regulators and mouthpieces to a pressurized flow of fluid using a fluid-conditioning spray gun adapted to mix a germicidal solution into a jet of water or other fluid carrier. The spray gun has a conical nozzle provided with a set of graduated, flexible, feather-edged disks or barbs that can hermetically mate with a number of scuba diving component apertures of different sizes and shapes.

Abstract: A process for removing unwanted deposition build-up from one or more interior surfaces of a substrate processing chamber after depositing a layer of material over a substrate disposed in the chamber. In one embodiment the process comprises transferring the substrate out of the chamber; flowing a first gas into the substrate processing chamber and forming a plasma within the chamber from the first gas in order to heat the chamber; and thereafter, extinguishing the plasma, flowing an etchant gas into a remote plasma source, forming reactive species from the etchant gas and transporting the reactive species into the substrate processing chamber to etch the unwanted deposition build-up.

Abstract: A method, system and apparatus for cleaning a tank through the use of a pair of spray heads arranged in operable communication with a pump via a pair of hose lines. One of the spray heads is operable to disperse a heated mist of cleaning solution, while the other spray head is operable to dispense a jet stream of the cleaning solution. The spray heads can be arranged in a closed loop, recirculating flow of the cleaning solution between the pump and the spray heads, or an open loop. Each hose line has a valve to control the flow of the cleaning solution therethrough so that the spray heads can operate independently from one another.

Abstract: A process is provided for cleaning a surface of an internal cavity of a gas turbine component having sulfidation or sulfur bearing deposits comprising: inserting into the internal cavity a fluoride salt; and heating the fluoride salt and the component in an inert atmosphere for a time and at a temperature to clean the sulfidation or sulfur bearing deposits on the surface. In a preferred embodiment the cleaned internal surface is then coated with a metallic coating.

Abstract: A method for cleaning a processing chamber that includes heating an inner surface of the processing chamber to a first temperature. The first temperature can be sufficient to cause a first species to become volatile. The first species can be one of several species deposited on the inner surface. A cleaning chemistry is injected into the processing chamber. The cleaning chemistry can be reactive with a second one of the species to convert the second species to the first species. The volatilized first species can also be output from the processing chamber. A system for cleaning the process chamber is also described.

Abstract: A method for cleaning a heat exchanging coil in an air conditioning unit using a low-pressure cleaning system to remove foreign particles that have accumulated on the heat exchanging coil. The low-pressure cleaning system discharges air at a low pressure, high velocity, and a high volume in order to clean the heat exchanging coil. Further, the low-pressure cleaning system can inject a substance into the discharge air flow to aid in cleaning the heat exchanging coil.

Abstract: The present invention discloses a method for removing impurities from a porous material by flowing a supercritical fluid with or without a modifier therein over a to-be-cleaned porous material having pores at the nanometer level under suitable temperatures and pressures, so that the supercritical fluid migrates into the pores at the nanometer level and removes impurities entrapped therein. The method of the present invention uses the physical and chemical properties of the supercritical fluid and optionally the modifier to clean the porous material without using an acid or alkaline solvent. The method of the present invention conserves water, and is both a highly efficient and environmentally friendly cleaning technique.

Abstract: A method for improving thickness uniformity and throughput of a carbon doped oxide deposition process is described. That method comprises removing pre-deposition steps in a deposition phase. Moreover, helium plasma is added to a pre-clean phase to eliminate the production of dummy wafers.

Abstract: The invention relates to a method for one-bath chemical cleaning and preservation of interior surfaces of hollow steel bodies, without any organic solvents, comprising controlled change of the liquid bath in that in a circuit of hoses running from a mobile tank equipped with a pump unit and steam generator there is circulated a liquid stream to a defined cavity of steel. The composition of the liquid is changed methodically by the addition of fresh chemical additives until the end of the process. Fresh water at 80° C. has added thereto an alkaline degreasing liquid A containing chlorine-free tensides, which is circulated, whereupon cleaning liquid B, consisting of citric acid with added cationic tensides, is added to a pH of 4.5 and is circulated. There is then added a complexing derusting liquid C, with active modified aminocarboxykate made biologically degradable, with adjustment of the pH to 4.5–5.

Abstract: A method for cleaning a manufacturing apparatus, includes introducing a cleaning gas including fluorine so as to flow from upstream toward an outlet port in a reaction chamber; and flowing a protective gas which reacts with the fluorine from a vicinity of the outlet port of the reaction chamber as an introduction position.

Abstract: A method and cleaning composition for removing engine deposits from turbine components, in particular turbine disks and turbine shafts. This method comprises the following steps: (a) providing a turbine component having a surface with engine deposits thereon, wherein the turbine component comprises a nickel and/or cobalt-containing base metal; and (b) treating the surface of the turbine component with a cleaning composition to convert the engine deposits thereon to a removable smut without substantially etching the base metal of the turbine component. The cleaning composition comprises an aqueous solution that is substantially free of acetic acid and comprising: a nitrate ion source in an amount, by weight of the nitrate ion, of from about 470 to about 710 grams/liter; and a bifluoride ion source in an amount, by weight of the bifluoride ion, of from about 0.5 to about 15 grams/liter.

Abstract: The invention is to a process for removing contaminants from a compressor and/or compressor intercooler in a methanol to olefin separation system. The process comprises compressing an effluent in a compressor having an inlet and an outlet and a compressor surface, the compressing occurring under conditions effective to form a contaminant on the compressor surface. A contaminant-removal medium is injected into the compressor or intercooler and the contaminant-removal medium contacts the contaminant under conditions effective to remove the contaminant from the compressor or intercooler inner surface thereby forming a mobile contaminant. The mobile contaminant is then removed from the compressor or intercooler.

Abstract: The present invention provides, in one embodiment, a method of manufacturing semiconductor devices. The method comprises transferring one or more substrate into a deposition chamber and depositing material layers on the substrate. The chamber has an interior surface. The method further includes, between the transfers, cleaning the deposition chamber using an in situ ramped cleaning process when material layer deposits in the deposition chamber reaches a predefined thickness. The in situ ramped cleaning process comprises forming a reactive plasma cleaning zone by dissociating a gaseous fluorocompound introduced into a deposition chamber in a presence of a plasma. The cleaning process further includes ramping a flow rate of the gaseous fluorocompound in a presence of the plasma to move the reactive plasma cleaning zone throughout the deposition chamber, thereby preventing a build-up of localized metal compound deposits on the interior surface.

Abstract: Carbon monoxide gas is provided in a ruthenium-deposition apparatus to clean undesired ruthenium-containing deposits from apparatus surfaces. Carbon monoxide gas is mixed with reactant gases in apparatus tubing and in a ruthenium-deposition reaction chamber to inhibit formation of undesired ruthenium deposits on apparatus surfaces and to remove ruthenium deposits.

Abstract: A vacuum plasma processor includes a roof structure including a dielectric window carrying (1) a semiconductor plate having a high electric conductivity so it functions as an electrode, (2) a hollow coil and (3) at least one electric shield. The shield, coil and semiconductor plate are positioned to prevent substantial coil generated electric field components from being incident on the semiconductor plate. During a first interval the coil produces an RF electromagnetic field that results in a plasma that strips photoresist from a semiconductor wafer. During a second interval the semiconductor plate and another electrode produce an RF electromagnetic field that results in a plasma that etches electric layers, underlayers and photoresist layers from the wafer.

Abstract: A method of cleaning a plasma etching reactor is provided. The method of cleaning a plasma etching reactor includes generating one or more plasmas from oxygen gas and a hydrogen-containing gas, and exposing interior surfaces of the reactor to the plasma(s) from the oxygen-gas and the hydrogen-containing gas. The cleaning method is used to remove deposited material, such as deposits containing fluorine, carbon, oxygen, and hydrogen from interior surfaces of the reactor. The hydrogen-containing gas may contribute to the cleaning method by providing a source of hydrogen that removes fluorine from the surfaces of the reactor.

Abstract: A device for mechanically cleaning a grooves used to hold a rotor or a stator winding of an electric machine includes an axially moveable device carrier and at least one cleaning tool connected to the device carrier and extending radially from the device carrier into the groove. In addition, a corresponding method includes the steps of radially moving at least one cleaning tool connected to a device carrier so as to mechanically remove impurities on a wall section of the groove, axial advancing of the device carrier in a manner adapted to the radial movement of the at least one cleaning tool, and setting the dimensional tolerance range for the groove by adjusting the cleaning tool. The device and the method are suitable for cleaning grooves into which a new winding is to be installed in an existing laminated body, for example, in the case of the retrofitting of generators.

Abstract: A device (1) for preventing the growth of the bacteria or removing the bacteria bred on the inner wall surfaces of the ducts (8, 9, 10) of a dental unit, comprising a transponder (3) having a control unit (2) generating electric signals including audible frequency components, a coil (3a), and a case (3b) for storing the coil (3a) and mounting means (5) for mounting the transponder (3) on the outer wall surface of the duct (8), whereby an audible frequency electric signal allowed to transmit through the ducts (8, 9, 10) is generated by applying the electric signals to the coil (3a).

Abstract: An improved spa vacuum for removing debris from the bottom of a spa or hot tub includes a removable lower assembly which includes a filter assembly. The filter assembly includes a filter housing having three stacked filter elements. The spa vacuum also has a removable nozzle having rounded side edges. A compression fitting connects a telescoping pole to an upper chamber cap of a debris chamber. The telescoping pole may be removed from the debris chamber if damaged or for purposes of packaging and shipping.

Abstract: In a process for treating moulds or mould halves (3) for the production of ophthalmic lenses, in particular contact lenses, the moulds or mould halves (3) are exposed to a plasma at least in the area of their shaping surfaces (310).

Abstract: A cleaning system for a livestock feeding device which unclogs blockage without the need for a workman to enter the feed dispensing area. The system includes at least two swiping arms which are positioned at a lower area of the feed system. The system is environmentally advantageous since workman entry into a hazardous area is reduced. The swiping arms are activated by an external motor which is turned on upon sensing of a clogged or blocked condition of the feed. The system applies to the feeding of hogs, livestock or other dispensing mechanisms.

Abstract: A method for etching a metal layer on which an oxide-based ARC layer is coated in a semiconductor device comprises the step of performing a dry cleaning process by using a Cl2/CHF3 based gas, after dry cleaning the ARC layer by using the oxide-based gas. As a result, the etching rates of the center area and the edge area are substantially same.

Abstract: The invention provides a method for the removal of contaminating materials from pipework, the contaminating materials comprising deposits on the pipework which cause a reduction in the effective internal diameter of the pipes and thereby effect a reduction in the rate of flow of a fluid through the pipework, the method comprising treating the contaminating materials with at least one carbamate salt. The methods is also suitable for the treatment of contaminating materials which have a particularly deleterious effect on fluid flow and comprise partial or total blockages of the pipework. The carbamate is preferably in the form of an aqueous solution, and a preferred carbamate salt is ammonium carbamate. The treatment may be carried out in the presence of an additive such as caesium carbonate or ammonium bicarbonate. Optionally the treatment may be accompanied by a pre-treatment or post-treatment with aid, this being followed by a water wash.

Abstract: The present invention provides a method and process for removing adherent molten metal from a surface by applying a non-wetting agent for the metal to the surface or to the adherent molten metal. The non-wetting agent may be a pressurized fluid or applied by a pressurized fluid.

Abstract: There is disclosed a die cleaning method for removing a forming-material from a die used in forming the forming-material containing a binder, comprising the steps of: removing a part or all of the binder contained in the forming-material from the die; and removing the forming-material from the die, whereby the forming-material in the die can be removed without damaging or deforming the die for use in forming the forming-material containing the binder.

Abstract: A pipe renovating method and system in which a pipe is first cleaned and then coated with a suitable coating material. In the cleaning step, pressurized air and particles of abrasive material are pumped into a first end of a pipe while suction is applied to the second end of the pipe via a vacuum pump to improve flow along the entire length of the pipe. The coating material is subsequently pumped in at one end of the cleaned pipe while suction is applied at the other end. In each step, the suction flow rate is higher than the input flow rate, so as to steer the mixture towards the second end. This method can be used to coat and clean different sections of a pipe system, by connecting the input materials successively to different access ports in the system.

Abstract: A compound such as Alq3 accumulated on the inner surface of a chamber at the time of organic EL device production and wasted is recovered and recycled, whereby the production cost is reduced. The inner surface of a chamber or the surface of components in the chamber to which a compound such as Alq3 has adhered is cleaned with a fluorinated alcohol such as 2,2,3,3,4,4,5,5-octafluoropentanol to recover Alq3.

Abstract: The present invention relates to a method and a device for cleaning internal passageways within a component, such as a component to be used in an engine. The device for cleaning the internal passageway includes a first probe having a longitudinal axis and at least one nozzle oriented at an angle, preferably perpendicular, to the longitudinal axis. In a preferred embodiment, the first probe has two nozzles, both oriented perpendicular to the longitudinal axis, and offset 180 degrees from each other. The device further includes a second probe having a longitudinal axis and a nozzle in a tip end, which nozzle is oriented along the longitudinal axis. Preferably, the first and second probes are connected to a common manifold.

Abstract: The present invention relates to a method of processing selected surfaces in a semiconductor process chamber by creating a temperature differential between the selected surfaces and contacting the surfaces with a reactant that preferentially react with a surface at one end of the temperature differential relative to the other selected surface(s). More particularly, the invention relates to the use of nitrogen trifluoride (NF3) gas for in situ cleaning of cold wall process chambers such as Rapid thermal Chemical Vaporization (“RTCVD”) systems.

Abstract: A method involving plasma cleaning of deposit residues in process chamber using duo-step wafer-less auto clean method is detailed. Specifically, the method involves cleaning the processing chamber by flowing a first gaseous composition with at least about 75% of fluorine-containing compound of the formula XyFz, into a processing chamber and then forming a first etchant plasma which removes silicon and silicon based byproducts from the interior surfaces of the processing chamber. The method then involves flowing a second gaseous composition into the processing chamber with a composition of at least about 50% O2 and forming a plasma from the second gaseous composition to provide a second etchant plasma which removes carbon and carbon based byproducts from the interior surfaces of the processing chamber. A system configured to execute the two step cleaning process is also provided.