Abstract: The present invention relates to the acidic cleaning in the beer industry, and more particularly an improved process for acidic cleaning of the various elements and vessels that are used in the preparation of beer and other related fermented beverages, said cleaning being carried out by using a formulation comprising at least one alkane sulphonic acid.

Abstract: A method for removing painted markings is provided that includes the step of applying a paint removal agent to a painted marking on a surface. A covering may be applied to the paint removal agent. Further, a fluid may be applied to the covering as the covering covers the paint removal agent to effect removal of the painted marking, the paint removal agent, and the covering.

Abstract: In a substrate processing apparatus, an anti-static liquid supply part supplies the anti-static liquid having electrical resistivity higher than that of an SPM liquid onto a substrate to puddle an entire upper surface of the substrate with the anti-static liquid, to thereby gradually remove static electricity from the substrate. Then, the processing liquid supply part supplies the SPM liquid onto the substrate to thereby perform an SPM process. In the SPM process, it is thereby possible to prevent a large amount of electric charges from rapidly moving from the substrate to the SPM liquid and prevent any damage to the substrate. Further, by maintaining the electrical resistivity of the anti-static liquid at the target electrical resistivity, it is possible to increase the static elimination efficiency of the substrate and shorten the time required for the static elimination process within the limits of causing no damage to the substrate.

Abstract: Semiconductor wafers are treated in a liquid container filled at least partly with a solution containing hydrogen fluoride, such that surface oxide dissolves, are transported out of the solution along a transport direction and dried, and are then treated with an ozone-containing gas to oxidize the surface of the semiconductor wafer, wherein part of the semiconductor wafer surface comes into contact with the ozone-containing gas while another part of the surface is still in contact with the solution, and wherein the solution and the ozone-containing gas are spatially separated such that they do not come into contact with one another.

Abstract: A method of cleaning equipment such as heat exchangers, evaporators, tanks and other industrial equipment using clean-in-place procedures and a pre-treatment solution prior to the conventional CIP cleaning process. The pre-treatment step improves the degree of softening of the soil, and thus facilitates its removal. The pre-treatment solution can be a strong acidic solution, a strong alkaline solution, or comprise a penetrant. A preferred strong acidic solution is an acid peroxide solution. In some embodiments, the pre-treatment may include no strong alkali or acid ingredient; rather, the penetrant provides acceptable levels of pre-treatment.

Abstract: Processing and drying of a sample, such as a semiconductor or MEMS device, is achieved using a single pressure chamber. The pressure chamber holds the sample in a sealed interior volume throughout various process steps, such as, but not limited to, photoresist removal, sacrificial layer etching, flushing or rinsing, dehydration, and critical point drying. The pressure chamber is constructed of a chemically-resistant and pressure-resistant material to withstand the various chemicals and pressures that are encountered in the various process and drying steps. For example, the pressure chamber is constructed from a nickel-copper alloy. Automated release etching and critical point drying of a MEMS or semiconductor device is provided without removing the device from the sealed pressure chamber.

Abstract: When the inner surface of containers conveyed in an inverted posture is sterilized, the sterilization efficiency can be increased, the amount of sterilizing fluid used can be reduced, the sterilization time and washing time can be shortened, the number of drive components of the apparatus can be reduced and the apparatus can be simplified and reduced in cost. A non-inserted nozzle 20 is disposed at a distance of 1-50 mm below the lower end surface 52 of a mouth of a container conveyed in an inverted posture, the sterilizing fluid is mixed with air and the sterilizing fluid is atomized and sprayed intermittently from the non-inserted nozzle toward the inside of the container.

Abstract: A vacuum processing apparatus includes a vacuum chamber for performing a plasma process and a cleaning process unit for performing a cleaning process to apply a plasma process to a wafer on which a single layer or a laminated film containing a metallic film is formed by using a corrosive gas, and a control unit having a sequence to abort the plasma process when an abnormality occurs in the vacuum chamber and transfer the wafer subjecting to the aborting of the plasma process to the cleaning process unit, after elapsing a predetermined time, to perform the cleaning process.

Abstract: A method for cleaning a semiconductor wafer composed of silicon directly after a process of chemical mechanical polishing of the semiconductor wafer includes transferring the semiconductor wafer from a polishing plate to a first cleaning module and spraying both side surfaces of the semiconductor wafer with water at a pressure no greater than 1000 Pa at least once while transferring the semiconductor wafer. The semiconductor wafer is then cleaned between rotating rollers with water. The side surfaces of the semiconductor wafer are sprayed with an aqueous solution containing hydrogen fluoride and a surfactant at a pressure no greater than 70,000 Pa. Subsequently, the side surfaces are sprayed with water at a pressure no greater than 20,000 Pa. The wafer is then dipped into an aqueous alkaline cleaning solution, and then cleaned between rotating rollers with a supply of water. The semiconductor wafer is then sprayed with water and dried.

Abstract: In one aspect, a method of cleaning an electronic device manufacturing process chamber part is provided, including a) spraying the part with an acid; b) spraying the part with DI water; and c) treating the part with potassium hydroxide. Other aspects are provided.

Abstract: Semiconductor wafers are treated in a liquid container filled at least partly with a solution containing hydrogen fluoride, such that surface oxide dissolves, are transported out of the solution along a transport direction and dried, and are then treated with an ozone-containing gas to oxidize the surface of the semiconductor wafer, wherein part of the semiconductor wafer surface comes into contact with the ozone-containing gas while another part of the surface is still in contact with the solution, and wherein the solution and the ozone-containing gas are spatially separated such that they do not come into contact with one another.

Abstract: A method of treating one or more wafers is provided. The method comprises the steps of: a) providing at least one wafer, that has first and second opposed major faces and at least one feature, such as a metal silicide, that is sensitive to a neutralizing chemistry on the first major face; b) causing an acidic chemistry, such as a sulfuric acid and/or phosphoric acid, to contact the first major face of the wafer and causing the wafer to spin; c) after causing the acidic chemistry to contact the wafer, causing a non-etching rinsing fluid to contact the first major face while the wafer is spinning; and d) during at least a portion of the time that the non-etching rinsing fluid is caused to contact the first major face of the spinning wafer, causing a neutralizing liquid to contact the second major face of the spinning wafer.

Abstract: The present invention discloses a method for cleaning a substrate comprising contacting the substrate in a cleaning cycle with an aqueous cleaning solution comprising an aqueous diluent and a detergent composition, the detergent composition comprising a glycolic and/or lactic acid oligomer with an average degree of polymerization between 1.8 and 6. Preferably, the substrate is contacted in a rinse cycle with an aqueous rinse which is substantially free of an intentionally added rinse agent or fabric softener.

Abstract: Process and apparatus is disclosed for providing a chemical reaction between calcium oxide containing grit particles to produce calcium hydroxide and heat, capturing the heat of hydration and using it to preheat water initially at ambient temperature, to rise to an elevated temperature to increase the amount of lime present in the water to a supersaturated lime suspension level, with the chemical reaction running to completion, followed by cooling. Heat from a water jacket may be used to raise the temperature in the lime slaker. A process and apparatus is also provided for dissolving scale on internal surfaces of a lime slaker, a lime aging tank, grit separation device and piping and dosing sub-systems, by adding acid into the system with rinse water. A pressurized delivery system that is substantially closed to atmosphere delivers treating dosing under sufficient pressure conditions to maintain a relatively constant back pressure, by means of valving.

Abstract: A novel approach to the removal of coffee and tea stains from dishes is disclosed. Tea, coffee and other stains caused by tannins are particularly difficult to remove and traditional techniques include harsh treatments that use bleach, or other environmentally undesirable chemicals such as phosphates, EDTA, NTA or other aminocarboxylates. Applicants have found that an acid rinse prior to alkaline cleaning of stained dishware such as ceramics porcelain and the like can remove up to one hundred percent of even aged coffee and tea stains.

Abstract: The present disclosure relates to methods and related cleaning solutions (116) for cleaning a glass substrate (10, 112), such as for removing metal ion contaminates from a glass substrate (10, 112) having a transparent conductive oxide layer (12). One method includes: providing a glass substrate (10, 112) having a transparent conductive oxide (TCO) layer (12); and exposing the glass substrate (10, 112) to a cleaning solution (116) that includes 0.5% to 5% organic acid, wherein the organic acid used includes citric acid, acetic acid, or oxalic acid.

Abstract: The present invention discloses an improved cleaning composition for cleaning metal surfaces such as aluminum and aluminum-containing alloys. The cleaning composition of the present invention comprises water and an ethoxylate of an alcohol having Formula R1—OH wherein R1 is a saturated or unsaturated, straight-chain or branched aliphatic having from 12 to 80 carbon atoms; an inorganic pH adjusting component; and at least one surfactant that is different than the ethoxylate set forth above. The cleaning composition of the present invention also has an average water-break-free percent reduction of less than 50% after 7 days aging of a working composition prepared from the cleaning composition. The present invention also provides a method of cleaning a metal surface with the cleaning composition of the invention.

Abstract: The method of surface treatment, as applied onto a metal base material, of the present invention includes a reduction treatment step of reduction-treating the oxide film formed on the metal base material and an oxidation treatment step of oxidation-treating the oxide film having been subjected to the reduction treatment.

Abstract: A method for fabricating semiconductor devices includes providing a semiconductor substrate having a surface region containing one or more contaminants and having an overlying oxide layer. In an embodiment, the one or more contaminants are at least a carbon species. The method includes processing the surface region using at least a wet processing process to selectively remove the overlying oxide layer and expose the surface region including the one or more contaminants. The method includes subjecting the surface region to a high energy electromagnetic radiation having wavelengths ranging from about 300 to about 800 nanometers for a time period of less than 1 second to increase a temperature of the surface region to greater than 1000 degrees Celsius to remove the one or more contaminants. The method includes removing the high energy electromagnetic radiation to cause a reduction in temperature to about 300 to about 600 degrees Celsius in a time period of less than 1 second.

Abstract: A method is used for removing a metal contaminant deposited on a quartz member selected from the group consisting of a reaction tube, wafer boat, and heat-insulating cylinder of a vertical heat processing apparatus for a semiconductor process. The method includes obtaining the quartz member unattached to the vertical heat processing apparatus; then, performing diluted hydrofluoric acid cleaning of cleaning the quartz member by use of diluted hydrofluoric acid; then, performing first purified water cleaning of cleaning the quartz member by use of purified water; then, performing hydrochloric acid cleaning of cleaning the quartz member by use of hydrochloric acid; and then, performing second purified water cleaning of cleaning the quartz member by use of purified water.

Abstract: A substrate processing method includes: supplying a fluid to a resist on a substrate after an ion implantation in which the resist is used as a mask; and supplying a stripping liquid to the resist for stripping the resist after the supplying the fluid. A cured layer is formed in a surface of the resist in the ion implantation. The fluid is purified water or a mixed fluid of purified water and an inert gas. A volume flow rate of the purified water is not less than 1/400 of a volume flow rate of the inert gas when the mixed fluid is supplied as the fluid.

Abstract: A process for cleaning a wafer having an uneven pattern at its surface. The process includes at least the steps of: cleaning the wafer with a cleaning liquid; substituting the cleaning liquid retained in recessed portions of the wafer with a water-repellent liquid chemical after cleaning; and drying the wafer, wherein the cleaning liquid contains 80 mass % or greater of a solvent having a boiling point of 55 to 200° C., and wherein the water-repellent liquid chemical supplied in the substitution step has a temperature of not lower than 40° C. and lower than a boiling point of the water-repellent liquid chemical thereby imparting water repellency at least to surfaces of the recessed portions.

Abstract: The present invention relates to medium chain peroxycarboxylic acid compositions of neutral or alkaline pH, to methods of making these compositions, and to methods employing these compositions. The methods include methods of cleaning. The compositions include cleaning compositions.

Abstract: The present invention relates to a liquid acidic hard surface cleaning composition having a pH of from 2 to 2.9 and comprising formic acid and an alkaline material.

Abstract: This invention relates to a plumbing device made of a copper alloy containing nickel salt, that includes a valve and a tube coupling having at least a liquid-contacting part washed with a cleaning fluid incorporating therein nitric acid and hydrochloric acid as an inhibitor under conditions of a temperature and a duration permitting effective removal of nickel salt, thereby performing nickel salt-removing treatment and causing the hydrochloric acid to form a coating film on the surface of the liquid-contacting part thereby effectively precluding elution of nickel salt from the surface of the liquid-contacting part in the presence of the coating film, wherein the nitric acid has a concentration c in a range of 0.5 wt %<c<7 wt % and the hydrochloric acid has a concentration d in a range of 0.05 wt %<d<0.7 wt % in the cleaning fluid, wherein the temperature is set to 10° C.?x 50° C., and wherein nickel salt is removed with the cleaning fluid.

Abstract: Methods of cleaning plasma processing chamber components include contacting surfaces of the components with a cleaning solution, while avoiding damage of other surfaces or areas of the components by the cleaning solution. An exemplary plasma processing chamber component to be cleaning is an elastomer bonded electrode assembly having a silicon member with a plasma-exposed silicon surface, a backing member, and an elastomer bonding material between the silicon surface and the backing member.

Abstract: A method for cleaning a semiconductor structure includes subjecting a semiconductor structure to an aqueous solution including at least one fluorine compound, and at least one strong acid, the aqueous solution having a pH of less than 1. In one embodiment, the aqueous solution includes water, hydrochloric acid, and hydrofluoric acid at a volumetric ratio of water to hydrochloric acid to hydrofluoric acid of 1000:32.5:1. The aqueous solution may be used to form a contact plug that has better contact resistance and improved critical dimension bias than conventional cleaning solutions.

Abstract: Disclosed herein is a method and treatment system for rapid cleaning and protecting of automotive cooling systems containing controlled atmosphere brazed aluminum heat exchangers. The method and treatment system can optionally include a conditioning (passivating) step. The treatment system can comprise three different parts: (1) cleaner or cleaning solution; (2) conditioner or conditioning solution; and (3) compatible CAB aluminum protective heat transfer fluid.

Abstract: Embodiments of the current invention describe a cleaning solution for the removal of high dose implanted photoresist, along with methods of applying the cleaning solution to remove the high dose implanted photoresist and combinatorially developing the cleaning solution.

Abstract: Mixtures containing concentrated sulfuric acid used for stripping photoresist from semiconductor wafer, such as SOM and SPM mixtures, are more quickly removed from a wafer surface using another liquid also containing high concentration of sulfuric acid, with the second liquid furthermore containing controlled small amounts of fluoride ion. The second liquid renders the wafer surface hydrophobic, which permits easy removal of the sulfuric acid therefrom by spinning and/or rinsing.

Abstract: The present invention is an agent for treating a hard surface comprising at least two components selected from the group consisting of (a) multi-armed stellate polyalkoxylates; (b) polyesteramides; and (c) copolymers prepared from a quaternary ammonium acrylamide and acrylic acid. The agents of the present invention find use in cleaning hard surfaces and/or providing a soil-repellant finish to hard surfaces such as ceramic, glass, stainless steel and plastic.

Abstract: A spin-rinse-dry (SRD) apparatus includes a housing; a pedestal in the housing, comprising a rotatable wafer supporter for holding and spinning a semiconductor wafer; and at least a first liquid dispensing tube in adjacent to the pedestal. The first liquid dispensing tube includes a bended tubular part and an outlet nozzle that is situated beyond an edge of the semiconductor wafer.

Abstract: The present invention relates to the use of at least one alkanesulfonic acid of formula R—SO3H, in which R represents a saturated, linear or branched, hydrocarbon chain containing 1 to 4 carbon atoms, as agent for cleaning cement, mortar, concrete, lime, laitance and other derived products. The invention also relates to a method of cleaning cement, mortar, concrete, lime, laitance and other derived products using at least one alkanesulfonic acid.

Abstract: Methods are provided for descaling metallic component devices such as stents. The devices or components are cleaned under ultrasound in a cleaning solution of ammonium hydrogen fluoride at a temperature within a range of about 60° to 80° C., then rinsed at that temperature with an aqueous rinse containing a nonionic surfactant and rinsed again with purified water.

Abstract: This invention relates to compositions comprising certain fungal serine proteases and processes for making and using such compositions including the use of such compositions to clean and/or treat a situs.

Abstract: A method for cleaning contaminated surfaces of surgical waste management equipment. The method includes rinsing surfaces of the equipment with water to remove water soluble contaminants and waste material. A rinse solution is applied to the surfaces of the equipment to provide a residual film thereon. The rinse solution includes a first nonionic alkoxylated alcohol surfactant having an HLB value ranging from about 12 to about 15, a second nonionic alkoxylated alcohol surfactant having an HLB value ranging from about 16 to 20, an aqueous solvent, and a bio-film permeation agent. A total of the first surfactant and the second surfactant in the composition ranges from about 2 to about 20 percent by weight of a total weight of the composition.

Abstract: A composition is provided for use in cleaning a surface of a cementitious material. The composition includes HCI, urea, complex substituted keto-amine-hydrochloride, an alcohol, an ethoxylate, and a ketone. A method of using the composition includes applying the composition to a surface from which it is desired to clean a cementitious material and removing the composition and released cementitious material from the surface. Methods are also provided for performing hydraulic fracturing of an oil or a gas well; for adjusting a pH of a drilling fluid; for adjusting and maintaining a pH of a process fluid; for solubilizing calcium carbonate in an aqueous suspension or dispersion of calcium carbonate; for removing a foulant in a fluid-handling element; adjusting a pH and lowering a salt level of turf.

Abstract: A method for cleaning a filtering membrane, contaminated by contaminants including inorganic and organic materials during a fluid-filtering process, is disclosed, the method comprises cleaning the filtering membrane by using a first cleaning solution of pH 6˜9 so as to remove the organic material from the filtering membrane; and cleaning the filtering membrane by using a second acid cleaning solution so as to remove the inorganic material from the filtering membrane, wherein the cleaning method of the present invention uses the first cleaning solution having pH 6˜9 instead of a strong-alkaline cleaning solution so as to prevent the filtering membrane from being damaged, and also uses the cleaning solution maintained at a a relatively low temperature instead of hot water so as to improve economical efficiency by reduction of energy consumption.

Abstract: Methods of treating used or degraded reverse osmosis membranes post-production are provided. The membranes can be treated online or offline. The reverse osmosis membranes are cleaned and then contacted with a rejection enhancing agent solution that includes polyvinylpyrrolidone or polyvinylalcohol. The reverse osmosis membrane is then contacted with a tannic acid solution to produce a reconditioned reverse osmosis membrane having reduced defects. The treatment can take place at temperatures greater than 34° C. because the polyvinylpyrrolidone and polyvinylalcohol rejection enhancing agents used do not have cloud point limitations.

Abstract: A method for fabricating semiconductor devices, e.g., strained silicon MOS device, includes providing a semiconductor substrate (e.g., silicon wafer) having a surface region, which has one or more contaminants and an overlying oxide layer. The one or more contaminants is at least a carbon species. The method also includes processing the surface region using at least a wet process to selectively remove the oxide layer and expose the surface region. The method further includes subjecting the surface region to a laser treatment process for a time period of less than 1 second to increase a temperature of the surface region to greater than 1000 degrees Celsius to remove the one or more contaminants provided on the surface region. The method also includes removing the laser treatment process to cause a reduction in temperature to about 300 to about 600 degrees Celsius in a time period of less than 1 second.

Abstract: There is provided a substrate treatment method for performing treatment by feeding a chemical liquid to a surface of a substrate, in which, before feeding the chemical liquid to a predetermined area of the substrate, a liquid substance having a resistivity lower than that of the chemical liquid is fed to the surface of the substrate so that the liquid substance wets at least the predetermined area, and then, the chemical liquid is fed to the predetermined area so that the treatment is performed on the substrate with the chemical liquid fed to the surface of the substrate.

Abstract: Provided is a substrate processing method that prevents generation of watermarks on a substrate and can be performed at a low cost. The method controls the ambient humidity around the substrate depending on the kind of the chemical liquid, when the substrate is processed with the chemical liquid. The control of the humidity is performed at least in a drying step that dries the substrate W. In one embodiment, the ambient humidity around the substrate is controlled when a fluid containing IPA as a drying fluid is supplied to the substrate W after processing the substrate W with the chemical liquid.

Abstract: In some embodiments, a method includes positioning an outlet of an acid dispenser adjacent to a first portion of an optical fiber. The method includes directing heated acid from the acid dispenser into contact with the first portion of the optical fiber and into a holding tank such that a portion of a coating of the optical fiber is removed to expose a cladding of the optical fiber. The method includes positioning an outlet of a fluid dispenser adjacent to a second portion of the optical fiber. The method includes directing a fluid pressurized at a substantially constant level from the fluid dispenser into contact with the second portion of the optical fiber and into the holding tank such that at least a portion of the heated acid is displaced from the cladding.

Abstract: The pickling process designed for pickling electrical steel strip in a continuous fashion comprising immersing the strip in at least one pickling tub. The pickling tub contains a mixture of HCl, Fe2+, and Fe3+ and a low concentration of HF. Upon exiting the final pickling tub, the strip may be brushed or scrubbed to loosen any residual scale to form a clean strip.

Abstract: The present invention relates to novel sulfoperoxycarboxylic acid compounds, and methods for making and using them. The sulfoperoxycarboxylic compounds of the invention are storage stable, water soluble and have low to no odor. Further, the compounds of the present invention can be formed from non-petroleum based renewable materials. The compounds of the present invention can be used as antimicrobials, and bleaching agents. The compounds of the present invention are also suitable for use as coupling agents.

Abstract: A substrate processing method includes a cleaning processing step, a mixed organic solvent supplying step, and a fluorine organic solvent supplying step. The cleaning processing step is a step of cleaning a main surface of a substrate by supplying deionized water to the substrate. The mixed organic solvent supplying step is a step of supplying a fluid of a mixed organic solvent to the main surface of the substrate after the cleaning processing step. The fluid of the mixed organic solvent contains a fluid of a water-soluble organic solvent and a fluid of a fluorine organic solvent having a smaller surface tension than that of the deionized water and a lower water solubility than that of the fluid of the water-soluble organic solvent. The fluorine organic solvent supplying step is a step of supplying the fluid of the fluorine organic solvent to the main surface of the substrate without supplying the fluid of the water-soluble organic solvent after the mixed organic solvent supplying step.

Abstract: Disclosed herein are methods for novel cleaning processes for inline quality monitoring short-loop semiconductor wafers. In one embodiment, an exemplary process may comprise immersing the short-loop wafer in an SC-2 aqueous solution comprising hydrochloric acid and hydrogen peroxide at a temperature of about 60° C., and for a time period of about 600 seconds, and then rinsing the wafer with deionized water to remove residual SC-2 solution immediately following immersing the wafer in the SC-2 solution. This exemplary method may then comprise immersing the short-loop wafer in an SC-1 aqueous solution comprising ammonia and hydrogen peroxide immediately after rinsing the wafer to remove residual SC-2 solution, and then rinsing the wafer with deionized water to remove residual SC-1 solution immediately following immersing the wafer in the SC-1 solution.

Abstract: A method of cleaning equipment such as heat exchangers, evaporators, tanks and other industrial equipment using clean-in-place procedures and a pre-treatment solution prior to the conventional CIP cleaning process. The pre-treatment step improves the degree of softening of the soil, and thus facilitates its removal. The pre-treatment solution can be a strong acidic solution, a strong alkaline solution, or comprise a penetrant. A preferred strong acidic solution is an acid peroxide solution. In some embodiments, the pre-treatment may include no strong alkali or acid ingredient; rather, the penetrant provides acceptable levels of pre-treatment.

Abstract: A resist on an electronic material is surely separated and removed in a short time. The electronic material is cleaned with a sulfuric acid solution containing persulfuric acid to separate and clean the resist, and thereafter wet cleaning is performed with gas dissolved water. By using gas dissolved water for performing wet cleaning after the resist separation with the sulfuric acid solution containing persulfuric acid, the time required for cleaning can be sharply reduced as compared with that of a former method. The sulfuric acid solution containing persulfuric acid is preferably one produced by electrolyzing a sulfuric acid solution.

Abstract: A cleaning solution is provided. The cleaning solution includes (a) 0.01-0.1 wt % of hydrofluoric acid (HF); (b) 1-5 wt % of a strong acid, wherein the strong acid is an inorganic acid; (c) 0.05-0.5 wt % of ammonium fluoride (NH4F); (d) a chelating agent containing a carboxylic group; (e) triethanolamine (TEA); (f) ethylenediaminetetraacetic acid (EDTA); and (g) water for balance.