Abstract: In a method of cleaning and refurbishing a process chamber component having a metal coating having a surface thereon, the surface of the metal coating is immersed in an acidic solution to remove at least a portion of the process deposits from the surface. Thereafter, the surface of the metal coating is immersed in a basic solution to remove substantially all the metal coating. The component may optionally be bead blasting to roughen a surface of the component, and the metal coating may be re-formed.

Abstract: A method of cleaning the interior of a processing chamber first performs a halogenation treatment by supplying a treatment gas containing a halogenating gas into the processing chamber and heating a support member for a target substrate, thereby halogenating a metal element in a by-product film. A reduction treatment is then performed by supplying a treatment gas containing a reducing gas into the processing chamber, thereby reducing a halide of the metal element and liberating the metal element. An oxidation treatment is then performed by supplying a treatment gas containing an oxidizing gas into the processing chamber and heating the casing walls of the processing chamber, thereby passivating the liberated metal element by oxidation.

Abstract: A highly efficient method for cleaning a substrate, whereby in the cleaning of the substrate, {circle around (1)} in a short time, {circle around (2)} both particle contaminants and metal contaminants can be removed, and {circle around (3)} a problem associated therewith, such as re-deposition of contaminants or a dimensional change due to etching, can be remarkably reduced, and which has the following characteristics. A method for cleaning a surface of a substrate, which comprises at least the following steps (1) and (2), wherein the step (2) is carried out after carrying out the step (1): Step (1): A cleaning step of cleaning the surface of the substrate with an alkaline cleaning agent containing a completing agent, and Step (2): A cleaning step employing a cleaning agent having a hydrofluoric acid content C (wt %) of from 0.03 to 3 wt %, wherein the cleaning time t (seconds) of the substrate with said cleaning agent is at most 45 seconds, and C and t satisfy the relationship of 0.25?tC1.29?5.

Abstract: In order to remove or decrease fine granular sulfides of Mn, Cr, Mo, etc. (Mn—S, Cr—S, Mo—S, etc.) left on a machined workpiece surface of sulfur free-cutting alloy steel without affecting the form and dimensional accuracy thereof, there is provided a method for treating the sulfur free-cutting alloy steel which comprises a soaking process of the machined workpiece in a solvent and an ultrasonic cleaning process by applying ultrasonic waves of 1.0 to 2.0 W/cm2 in watt density at a frequency of 40 KHz or a multi frequency in the solvent.

Abstract: A method for the open-loop and closed-loop control and documentation of a cleaning operation with a cleaning medium includes the steps of adding at least one indicator to the cleaning medium, setting parameters for at least one partial step in the cleaning operation by comparative measurements of the concentration of the at least one indicator in the mixture including cleaning medium, possibly with detergent and at least one indicator, and documenting at least the parameter settings. The method makes possible an exact result and exact setting of parameters for at least one partial step in the cleaning operation.

Abstract: A method of removing a virgin metal oxide coating from the surface of a superalloy gas turbine engine component. The component bearing the applied metal oxide coating is contacted with an aqueous coating-removal solution, typically containing by weight about 10-25% alkali hydroxide, about 1-8% alkanolamine, and about 0.5-5% gluconate salt at a temperature of from about 170° F. (67° C.) to about 210° F. (99° C.), for a time sufficient to remove the metal oxide coating from the superalloy blade by gentle mechanical means. The metal oxide coating can comprise one or more metal oxide layers, such as a chromium oxide layer and an aluminum oxide layer.

Abstract: A wet treatment method useful in one of a chemical processing and a rinsing step performed upon fabrication of semiconductor devices. A substrate is treated with a desired liquid while revolving the substrate around an axis of rotation outside the substrate such that the liquid flowing on a surface of the substrate is maintained flowing under a centrifugal force greater than gravitation. The substrate is treated while supplying the liquid at a flow rate at least equal to a discharge rate of the liquid only in a direction conforming with that of the centrifugal force or with that of a flow of the liquid flowing on the surface of the substrate under the centrifugal force. The substrate surface is evenly treated with the liquid while avoiding flows of the liquid running against each other or a flow of the liquid stagnating on the surface of the substrate.

Abstract: Disclosed is a cleaning method of a ceramic member, which permits removing with a high accuracy the contaminants from a ceramic member contaminated with the contaminant. The cleaning method comprises the steps of processing the contaminated ceramic member with an alkaline chemical liquid having a pH value not smaller than 10 in the presence of an ultrasonic wave, processing the ceramic member processed with the alkaline chemical liquid with a prescribed acidic chemical liquid in the presence of an ultrasonic wave, and heating the ceramic member processed with the acidic chemical liquid under temperatures not lower than 1,000° C.

Abstract: An improved method for removing contaminant particles from a surface of a semiconductor wafer includes forming a sacrificial film on the surface of the wafer and then removing the sacrificial film by supercritical fluid cleaning. The removal of the sacrificial film via the supercritical fluid cleaning process facilitates removing the contaminant particles. The method further includes identifying and characterizing the contaminant particles and creating a record of the contaminant particle data. The composition of the sacrificial film is selected based on the contaminant particles data and the supercritical cleaning recipe is selected based on the composition of the sacrificial film and the contaminant particles data.

Abstract: A composition and method for stripping and cleaning organic coatings from substrates, comprising a solution of high-boiling alcohols, preferably polyglycols, a surfactant, preferably a nonylphenol ethoxylate, and an alkali metal hydroxide, said composition being essentially free of any amines. The composition aggressively and effectively strips paints and other organic coatings without harming underlying substrates damaged by prior art strippers, over conventional or lower time periods, and at conventional or lower temperatures. One embodiment of the invention comprises from about 40% to about 98.9% by weight of a high-boiling alcohol; from about 1% to about 60% of a non-ionic surfactant; and from about 0.1% to about 10% of an alkali hydroxide or mixture of alkali hydroxide.

Abstract: Aqueous cleaning agent and its use in a process for cleaning ultrafiltration membranes in ultrafiltration units of electro-dipcoating plants, which cleaning agent contains electro-dipcoating lacquer (EDL) binders overneutalized with neutralizing agent.

Abstract: On-Line and Off-Line methods of simultaneously cleaning and disinfecting an industrial water system are described and claimed. The methods involve the addition to the water of the industrial water system of a Compound selected from the group consisting of the alkali salts of chlorite and chlorate and mixtures thereof; and an acid, followed by allowing the water in the industrial water system to circulate for several hours. The reaction of the alkali salts of chlorite and chlorate and acid produces chlorine dioxide in-situ in the water of the industrial water system. The chlorine dioxide kills microorganisms and the acid acts to remove deposits upon the water-contact surfaces of the equipment. An alternative method involves the use of a chelating agent and a biocide. Other possible cleaning and disinfection reagents may be added as needed including corrosion inhibitors, chelating agents, biocides, surfactants and reducing agents.

Abstract: A method of cleaning resist residue includes oxidizing the residue. The oxidized residue can be water soluble.

Abstract: Disclosed is a cleaning method of a ceramic member, which permits removing with a high accuracy the contaminants from a ceramic member contaminated with the contaminant. The cleaning method comprises the steps of processing the contaminated ceramic member with an alkaline chemical liquid having a pH value not smaller than 10 in the presence of an ultrasonic wave, processing the ceramic member processed with the alkaline chemical liquid with a prescribed acidic chemical liquid in the presence of an ultrasonic wave, and heating the ceramic member processed with the acidic chemical liquid under temperatures not lower than 1,000° C.

Abstract: A composition for removing etching residue and a method using same are disclosed herein. In one aspect, there is provided a method for removing etching residue from a substrate comprising: contacting the substrate with a composition comprising water, an organic dicarboxylic acid, a buffering agent, a fluorine source, and optionally a water miscible organic solvent.

Abstract: A method for removing polymer containing residues from a semiconductor wafer including metal containing features including providing a semiconductor wafer having a process surface including metal containing features said process surface at least partially covered with polymer containing residues; and, subjecting the semiconductor wafer to a series of cleaning steps including sequentially exposing the process surface to at least one primary solvent and at least one intermediate solvent the at least one intermediate solvent comprising an ammonium nitrate containing solution.

Abstract: The invention is directed to an ink-only label at least consisting of an adhesive layer, an ink-only image layer and optionally a protective layer, wherein the label, when applied to a substrate, has a water permeability coefficient, as defined herein, which is sufficient to enable fast removal of the label from the substrate with water or an aqueous alkaline solution, without destructive treatment of the said substrate.

Abstract: A method of warewashing for the removal of starch is described herein. The method includes applying an alkaline composition to a dish, then applying an acidic composition to a dish, and then applying a second alkaline composition to the dish. The method may include additional steps. Compositions for using with the method are also disclosed. Finally, dish machines that may be used in accordance with the method are disclosed.

Abstract: A semi-aqueous solvent based method using non-aromatic, halogen-free organic solvent compositions for the effective removal of flux residue from electronic component surfaces after high temperature solder interconnections in the presence of rosin based flux compositions. Rosin flux residue can be removed using hydrophobic, essentially water insoluble, propylene glycol alkylether solvents in conjunction with a surfactant, preferably an ionic and/or a mixture of a non-ionic and an ionic surfactant in the first step, then a second step involving immersion with agitation in a hydrophobic solvent with no added surfactant. This is followed by a third step of hydrophilic solvent immersion with agitation/spray, rinsing off the hydrophilic solvent with water, and then a drying step.

Abstract: Methods for cleaning semiconductor wafers are presented. Contaminants, particularly photoresist and post-etch residue, are removed from semiconductor wafers. A wafer or wafers is first treated with a peroxide-containing medium, for example, to oxidatively cleave bond structures of contaminants on the wafer work surface. Excitation energy is used to activate the peroxide-containing medium toward the formation of radical species. After treatment with the peroxide-containing medium, a supercritical fluid treatment is used to remove any remaining contaminants as well as to condition the wafer for subsequent processing.

Abstract: A method of cleaning particulates from a solution bath including at least partially filling a deionized water (DIW) bath for rinsing at least one wafer following chemically cleaning the at least one wafer; rinsing the at least one wafer; transferring the at least one wafer to a downstream process; at least partially draining the DIW from the DIW bath; at least partially filling the DIW bath with a bath cleaning solution; and, applying at least one source of ultrasonic energy to agitate the bath cleaning solution.

Abstract: The described cleaning process comprises an alkaline and an acid cleaning step as well as one or more additional alkaline and/or acid cleaning steps, in particular for the mechanical cleaning of crockery in commercial dishwashers, in which primarily deposits of starch can be removed exceptionally well.

Abstract: A customizable car wash blending system and method is provided. The method includes the steps of positioning a vehicle adjacent a set of sensors (step 10), measuring a variety of parametric data relating to macroscopic debris and surface film formed on a surface of the vehicle, calculating the quantity of presoak components to be added to a presoak solution (step 70), blending the presoak solution (step 80), and applying the presoak solution to the vehicle (step 110). Quantities of presoak enhancing agents are also calculated from the sensor readings (step 120) along with the calculation of the number and type of wash cycles required for the vehicle (step 130). The method is implemented by customizable car wash blending system (200) which incorporates a plurality of sensors (210, 220, 230, 240, 250) in communication with a computer control system (270). Computer control system (270) communicates with a series of sub-systems (280, 290, 300, 310) in order to apply the presoak solution and wash the vehicle.

Abstract: The invention relates to a method of decontamination or preventing contamination of surfaces by an exchange mechanism.

Abstract: Alkaline and acid cleaning solutions (180, 182), are used sequentially for removing organic and inorganic residues, respectively, from the chamber. The two cleaning solutions are stored in separate storage containers (52, 54) carried by the cart. The alkaline cleaning fluid preferably includes a strong base, such as potassium or sodium hydroxide. The acid cleaning solution includes a strong acid, such as phosphoric acid, which passivates the chamber during the cleaning process. After cleaning is complete, the two cleaning fluids are mixed together to form a neutral or near neutral solution which is disposable in a sanitary sewer system without further treatment.

Abstract: A method for cleaning an apparatus using a clean-in-place system is disclosed. The clean-in-place system is in fluid communication with an inlet and an outlet of the apparatus. In the method, a cleaning composition having a measurable physical property (e.g., pH) is supplied from a cleaner tank into the inlet of the apparatus for a first period of time. A rinsing composition having the measurable physical property at a second measured value is then supplied from a rinse tank into the inlet of the apparatus for a second period of time. The measurable physical property is sensed versus time for fluids exiting the outlet of the apparatus, and a circulation time of the cleaning composition is determined. A closing time for a return valve of the cleaner tank is then determined for subsequent cleaning cycles such that minimal rinsing composition enters the cleaner tank during the subsequent cleaning cycle.

Abstract: A copper wiring is desirable for a high-speed logic circuit integrated on a semiconductor substrate, and is patterned through a chemical mechanical polishing, wherein polishing particles are brushed away from the major surface of the resultant semiconductor structure by using aqueous ammonia at 0.0001-0.5 weight percent, catholyte or hydrogen-containing water without damage to the copper wiring, and, thereafter, metallic contaminants such as copper is removed by using washer containing decontaminating agent selected from polycarboxylic acid, ammonium salts thereof and polyaminocarboxylic acid also without damage to the copper wiring.

Abstract: A method for cleaning an apparatus using a clean-in-place system is disclosed. The clean-in-place system is in fluid communication with an inlet and an outlet of the apparatus. In the method, a cleaning composition having a measurable physical property (e.g., pH) is supplied from a cleaner tank into the inlet of the apparatus for a first period of time. A rinsing composition having the measurable physical property at a second measured value is then supplied from a rinse tank into the inlet of the apparatus for a second period of time. The measurable physical property is sensed versus time for fluids exiting the outlet of the apparatus, and a circulation time of the cleaning composition is determined. A closing time for a return valve of the cleaner tank is then determined for subsequent cleaning cycles such that minimal rinsing composition enters the cleaner tank during the subsequent cleaning cycle.

Abstract: Methods of removing discoloration from a metal surface of an electronic device are presented the methods comprising the steps of exposing a metallic surface of an electronic device to a first composition comprising an organic reagent, the metallic surface having discoloration thereon, under conditions sufficient to form a first intermediate metallic surface substantially devoid of non-ionic residues; a second step of contacting the first intermediate metallic surface with a second composition comprising an acid under conditions sufficient to form a second intermediate metallic surface substantially devoid of non-ionic residues, oxides, hydroxides and the like; and rinsing the second intermediate metallic surface with deionized water.

Abstract: A portable apparatus cleans a passage such as an oxygen line by circulating a cleaning medium, such as a silicated alkaline cleaner such as OCC, through the passage. A rinse medium, such as distilled water, may than be circulated through the passage. The cleaning medium and the rinse medium may be filtered, and a flush medium is preferably circulated through the passage after the circulation of the cleaning medium and before the circulation of the rinse medium.

Abstract: A highly efficient method for cleaning a substrate, whereby in the cleaning of the substrate, {circle over (1)} in a short time, {circle over (2)} both particle contaminants and metal contaminants can be removed, and {circle over (3)} a problem associated therewith, such as re-deposition of contaminants or a dimensional change due to etching, can be remarkably reduced, and which has the following characteristics.

Abstract: A method is disclosed for rinsing a cleaned object whereby cleaning chemical liquid adhered to the object is substantially removed therefrom while substantially reducing the amount of pure water used for rinsing. The object with cleaning chemical liquid adhered thereto is immersed in a rinse bath filled with pure water, so that the cleaning chemical liquid may be rinsed off therefrom while pure water is continuously fed to the rinse bath. A neutralizing chemical liquid of alkalinity or acidity opposite that of the cleaning chemical liquid is added to the pure water in the rinse bath by feeding the neutralizing chemical liquid using a feed pump and a pump controller. Thus, the cleaning chemical liquid is neutralized by the neutralizing chemical liquid, to thereby be converted into a salt readily soluble in pure water, which salt is then discharged together with the pure water by overflowing the rinse bath.

Abstract: An object of the present invention is to provide washing liquid for semiconductor substrate capable of removing grinding grains of silica, alumina or the like in a polishing agent and polishing trashes of copper, and capable of leaving little organic substance due to an additive used for preventing corrosion of copper on the surface of a copper wiring after washing, while corrosion of copper is suppressed, and a method of producing a semiconductor device using this washing liquid. The object is achieved by washing liquid for a semiconductor substrate having a copper wiring, comprising a basic compound and at least one selected from the group consisting of sugar alcohols and saccharides.

Abstract: Organic matter and metal impurities present on the surface of a photomask are removed. Foreign matter still adhering to the surface of the photomask is removed with H2 gas dissolved water. The photomask is dried. Thus provided is a method of washing a photomask in a manner which permits attaining an effect of removing foreign matter equivalent or superior to that of a conventional method with a small amount of chemical solution and reducing the amounts of chemicals and high purity water.

Abstract: A method for removing soldering flux residue from a substrate, such as soldering flux residue formed around solder joints between a chip package and a circuit board, the method including steps of placing the joined circuit board and chip package in isopropyl alcohol to solvate the soldering flux residue, agitating the isopropyl alcohol to break up the soldering flux residue, removing the joined circuit board and chip package from the isopropyl alcohol, drying broken soldering flux residue that is on the joined circuit board and chip package, and spraying the soldering flux residue, that is on the joined circuit board and chip package, with an aqueous cleaner that contains an alkaline compound, to remove broken soldering flux residue that is around the solder joints.

Abstract: Cleaning solution is used to clean ceramic parts using the same. The cleaning solution includes about 5-30% by weight of fluoric salt, about 10-20% by weight of organic acid, about 30-50% by weight of organic solvent, and about 50% by weight of water. The ceramic parts may be portions of an etching apparatus on which plasma reaction by-products are adsorbed. Plasma reaction by-products are removed from the ceramic parts dipping the parts into the cleaning solution, followed by rinsing and heat treatment.

Abstract: A washing method of petroleum equipment using washing solution capable of being used in a waterless environment is provided. A compound of surface-active agent and oil is used as the washing solution of the petroleum equipment. Content of the surface-active agent in the compound is preferably 1 to 20 volume %. The surface-active agent is preferably selected from the group consisting of anionic surface-active agent, cationic surface-active agent, amphoteric surface-active agent and nonionic surface-active agent. The oil is preferably at least one selected from the group consisting of kerosene, light gas oil, vacuum gas oil and light cycle oil fraction obtained from a fluid catalystic cracking unit.

Abstract: A method for the production of (meth)acrylic acid and/or a (meth)acrylic ester is provided. This method for the production of (meth)acrylic acid and/or a (meth)acrylic ester includes washing the device constructed for the production thereof with a basic solution and subsequently rinsing them with a solvent for the purpose of removing solid substances such as polymer and precipitate which occur during the production of (meth)acrylic acid and/or a (meth)acrylic ester.

Abstract: Thus use of a post detergent step for removing aqueous residue from ware combined with a subsequent step using a potable rinse or a dilute solution of an aqueous food grade rinse aid to rinse alkaline washed ware provides significant advantages. The two step rinse method insures complete and sanitary cleaning of ware while permitting the use of different formulations in the post detergent step and the subsequent rinse step. Such process conditions permit the use of differing times and temperatures in the post detergent step and in the rinse step and permits the use of different formulations in the post detergent step and in the rinse step.

Abstract: A device for dispensing washing agents is described, for a household washing machine, in particular a diswasher, said dispenser (1) having at least a tank (S) for a liquid washing agent and an arrangement (11-22) for dispensing a dose of said washing agent. The arrangement comprises: a passage (12A, 12B, 12C) for putting the inside of said tank (S) in communication with a discharge outlet (16); plugging means (13) for said passage (12A, 12B, 12C), at least an actuator (11) for operating said plugging means (13). According to the invention, said plugging means comprise an element (13) being movable within said passage (12A, 12B, 12C) and bearing sealing means (18-21), whereby the movable element (13), in a first position, allows to realize the dosage of an amount of washing agent and, in a second position, allows to dispense the dosed amount of washing agent.

Abstract: An apparatus and a method for removing coating layers from the top of alignment marks on a wafer are described. The apparatus includes a cleaning chamber that is a cavity and a lid member suspended in the cavity, a wafer chuck that is rotatably mounted in the lid member for holding a wafer in an upside down position such that the alignment marks are facing downwardly, and at least two solvent dispensing arms mounted in an outer peripheral area of the lid member that are immediately adjacent to the chuck for dispensing a flow of solvent upwardly toward the active surface of the wafer when the wafer is held in a stationary position, each of the at least two solvent dispensing arms are positioned corresponding to a position of one of the alignment marks.

Abstract: A method is taught for cleaning photographic chemistry product fouling, including a proteinaceous portion and a non-proteinaceous portion from a liquid delivery system. The method comprises the steps of displacing resident product solution in the piping with water, hydrodynamically cleaning the piping system using two-phase flow a first time, chemically cleaning the piping system with an aqueous bleach solution to remove the proteinaceous portion of the photographic chemistry product fouling, chemically cleaning the piping system with a functionalized ethyl acetate solvent to remove the non-proteinaceous portion of the photographic chemistry product fouling, and hydrodynamically cleaning the piping system using two-phase flow a second time after the chemical cleaning steps to remove remaining residue. Preferably, after the second hydrodynamic two-phase flow cleaning step, the delivery system is subjected to a high purity water rinse.

Abstract: A method of cleaning a microelectronic substrate is carried out by providing a cleaning fluid, the cleaning fluid comprising an adduct of hydrogen fluoride with a Lewis base in a carbon dioxide solvent; and then cleaning the substrate by contacting the substrate to the cleaning fluid for a time sufficient to clean the substrate.

Abstract: Water soluble detergents and enzymes are used for mechanically cleaning textiles or crockery. According to the invention, enzymes with a catalytic effect on typical stains are added to the washing or cleaning process, only for as long as their catalytic effect is desired. This avoids superfluous removal of the enzymes that have been used in a washing or cleaning process.

Abstract: To provide a novel and effective cleaning method which can give a cleaned fluorine-containing rubber molded article for semiconductor production apparatuses. The method of cleaning the fluorine-containing rubber molded article for semiconductor production apparatuses, which comprises washing the fluorine-containing rubber molded article at least once with ultra pure water which has a metal content of not more than 1.0 ppm and does not contain fine particles of not less than 0.2 &mgr;m in an amount of more than 300 per 1 ml.

Abstract: In a process for removing the paint from plastic components provided with coats of paint, the plastic components are first crushed to a bulk material size of the crushed plastic pieces. The plastic pieces are subsequently mixed with a paint removing agent reducing the adhesion of the coats of paint to the plastic pieces, and circulated by means of a conveyor screw. The paint removing agent is formed in this connection by an emulsion consisting of at least one benzyl-substituted alkanol and an alkyl-glycol acetate or N-alkyl-pyrrolidone with an aqueous lye, which can not be completely mixed. The mixing ratio for mixing the individual components is selected so that it is in the range of a mixing gap. After the paint removing agent has acted upon the painted plastic pieces, a solid substance is added to the paint remover so that the further steps of the method can be carried out in a dry state.

Abstract: This invention provides a method for reprocessing a dialyzer for hemodialysis, the method comprising the steps of rinsing the dialyzer with water and cleaning it with electrolyzed strongly acidic water, or the steps of rinsing the dialyzer with water, cleaning it with electrolyzed strongly alkaline water, rinsing it with water and cleaning it with electrolyzed strongly acidic water, as well as a reprocessing apparatus for carrying out the reprocessing method.

Abstract: A composition suitable for eliminating a thermosetting resin (and a method of so using the composition) is disclosed. In the composition, tetra methyl ammonium hydroxide (TMAH) is included so as to eliminate the thermosetting resin. Accordingly, the composition is suitable for removing a dielectric layer, an organic protective layer, an insulating layer, an alignment layer, black matrices and color filters, etc. made form a thermosetting resin in an LCD or a semiconductor, and permits a reproduction or a rework of the thermosetting resin film.

Abstract: The present invention relates to a kit comprising a dishwashing applicator comprising a cavity capable of receiving a unit dose dishwashing composition, and a unit dose dishwashing composition. Preferably the unit dose dishwashing composition is a water-soluble or water-dispersible pouch comprising a hand dishwashing composition.

Abstract: A method and apparatus for cleaning the slider air bearing surface of a head gimbal assembly is disclosed. A plurality of carriers may position and hold a plurality of head gimbal assemblies to be polished. A cloth strip may be rubbed against the slider air bearing surface. A movable cylinder unit coupled to the plurality of carriers may move the carriers. A polish tank may provide cleaning solution to the movable cylinder unit. A pump may recirculate the cleaning solution. A filter canister with a filter cartridge may filter the cleaning solution.