Abstract: A dish-cleaning appliance comprising a sink having a bowl defining a wash chamber with an open top for providing access to the wash chamber. A liquid recirculation system is provided for spraying liquid onto the dish rack to effect the cleaning of any dishes along the rack. A basket with a sprayer is disposed within the wash chamber. A self-aligning coupling fluidly connects a liquid conduit to the sprayer when the basket is seated.

Abstract: This invention relates to water-based alkaline cleaning solutions and their use as an environmentally safer replacement of organic solvents to remove photoresist, polyimide residue and other interlevel dielectric polymer coating residue from polymer film apply equipment, specifically, spin coater bowl and assembly parts consisting of a teflon top shield, stainless steel plate, and a bottom teflon spin coating bowl used in semiconductor device fabrication processes.

Abstract: The present invention relates to methods for cleaning, rinsing, and/or antimicrobial treatment of medical carts, medical cages, and other medical instruments, devices or equipment. The method for cleaning employs a solid alkaline, for example a solid carbonate, cleaning composition for cleaning the medical cart, cage, instrument, device, or equipment. The method for rinsing employs a solid neutral or neutralizing rinse composition for rinsing the medical cart, cage, instrument, device, or equipment. The method for antimicrobial treatment employs a solid, for example a solid quaternary ammonium or solid halogen, antimicrobial composition, for antimicrobial treatment of the medical cart, cage, instrument, device, or equipment.

Abstract: A to-be-cleaned substrate is cleaned by use of an acid liquid agent in a cleaning cup, the remaining acid liquid agent is washed out by use of pure water, then an alkaline liquid agent is emitted to the surface of the to-be-cleaned substrate in the same cleaning cup to remove the acid liquid agent remaining on the to-be-cleaned substrate. A neutralization reaction between the acid and alkali is caused by emitting the alkaline liquid agent to the surface of the to-be-cleaned substrate so as to efficiently remove the acid liquid agent remaining on the surface of the to-be-cleaned substrate.

Abstract: In a method for cleaning a copper surface of a semiconductor wafer or article, nitrogen gas is bubbled or dissolved into a strong alkaline solution, displacing dissolved oxygen from the solution. A nitrogen gas environment is provided over the copper surface. The alkaline solution is then applied to the copper surface. The copper etch rate is greatly reduced. The method is useful in removing residual polishing slurry after a chemical-mechanical polishing step, and for removing residues left in via holes after plasma etching.

Abstract: Disclosed is a drying method constituted such that, in a case of including the cleaning step using the water-containing solvent, substituting a water on a microstructure by a fluorocarbon type solvent having the water substitution solvent proper value X of from 0.01 to 10 defined by the formula (1) and further substituting by a fluorocarbon type solvent which may be identical with or different from the fluorocarbon type solvent described above, enabling steps up to the drying with liquefied/critical carbon dioxide to be conducted rapidly and to prevent collapse or swell of a photoresist pattern.

Abstract: The present invention is directed to a process for separating polyester materials from various coating materials. In general, the process includes the steps of mixing polyester materials which have coatings adhered to the surface with an alkaline composition in a mixer. The alkaline composition contains a solution of a Group I alkaline compound and a Group II alkaline compound. The mixer imparts sufficient energy to the slurry to provide substantially complete, even coating of the polyester containing materials with the alkaline composition and cause separation of the coating materials from the surface of the polyester substrate. The mixture can be dried causing the remaining coating materials to form a dry powder mixed with the polyester substrate. After drying, the coating materials can be substantially removed from the polyester substrate by one or more dry separation techniques.

Abstract: A semiconductor wafer cleaning method is provided. After cleaning the wafer with a chemical cleaning solution, the wafer is placed in a cleansing tank that fills with deionized water. A neutralizer is then added to the cleansing tank. The surface of the wafer is then neutralized to a neutral pH value. Thereafter, the chemical cleaning solution residue on the wafer surface is removed by cleaning the wafer with deionized water.

Abstract: Disclosed are systems, methods, devices and kits for sequentially dispensing laundry additive materials into the drum of an automatic washing machine as that machine is used to carry out a fabric laundering operation. To bring about such dispensing of additives, a lidded housing structure is placed within the drum of an automatic washing machine, a multi-compartmented insert, containing different laundry additives in each compartment, is placed within the lidded housing structure, the lid is closed and the machine is run through the several stages of its laundering cycle. Means are provided to open at least one compartment of the insert upon closing of the housing structure lid, thereby dispensing the contents of that opened compartment into the washing machine drum as wash additive materials.

Abstract: The pickling process of the present invention is designed for pickling electrical steel strip in a continuous fashion and comprises at least one pickling tank equipped with at least one set of sprayers designed to spray the top and bottom surfaces of a steel strip with a solution comprised of hydrogen peroxide prior to and/or after the strip is immersed in a solution contained in a pickling tank. The set(s) of sprayers in each of the pickling tanks are located above the level of the pickle bath solution, rather than being located in separate spray tanks. Upon exiting the final pickling tank, the strip is brushed/scrubbed to loosen any residual scale to form a clean strip.

Abstract: Washing items are washed simultaneously with softening washing water comprising alkali metal ion and at least one of carbonate ion and bicarbonate ion. The washing water before being softened is obtained by electrolyzing an aqueous solution of sodium hydrogencarbonate having a pH of 9.5 or more and an electric conductivity of 150 mS/m or more. The softened washing water has a total hardness of 40 ppm or less.

Abstract: The present invention is related to a method for reducing the metal contamination on a surface of a semiconductor substrate wherein said substrate is submitted to a wet cleaning or rinsing process in a solution capable of oxidising said surface and containing a substance strongly dissociating in said solution whereby creating an amount of ions of at least one species in said solution, at least one of the ion species being such that the ions of the species are binding to the oxidised surface in such a way that said amount of ions is substantially reducing the amount of metal ions bound to the oxidised surface. Wet treatments such as rinsing, cleaning, in wet benches, batches and single wafer wet-cleaning equipment and single or double-side cleaning or etching applications can use the method of the present invention.

Abstract: A process for the remediation of soil, rock or water contaminated with volatile organic compounds involving: (1) forming an emulsifier comprising: (a) a sugar surfactant; and (b) a nonionic surfactant, other than the sugar surfactant which, when combined with the sugar surfactant, provides a hydrophilic-lipophilic balance of from about 8.0 to about 13.0; (2) mixing the emulsifier with the volatile organic compounds to form a stable emulsion; and (3) removing the stable emulsion from the soil, rock or water.

Abstract: A method including the consecutive steps of: dipping a wafer in a washing solution in a washing chamber; replacing the washing solution by a first chemical solution in the washing chamber receiving therein the wafer, the first chemical solution including at least one chemical; dipping the wafer in the first chemical solution after stopping the replacing; and replacing the first chemical solution by a second chemical solution including the at least one chemical and having a concentration lower than a concentration of said first chemical solution. The number of the particles remaining on the wafer is significantly reduced compared with a conventional method to improve the removing rate of the particles deposited onto the wafer.

Abstract: Thus use of a post detergent step for removing aqueous residue from ware combined with a subsequent step using a potable rinse or a dilute solution of an aqueous food grade rinse aid to rinse alkaline washed ware provides significant advantages. The two step rinse method insures complete and sanitary cleaning of ware while permitting the use of different formulations in the post detergent step and the subsequent rinse step. Such process conditions permit the use of differing times and temperatures in the post detergent step and in the rinse step and permits the use of different formulations in the post detergent step and in the rinse step.

Abstract: An improved dishwashing machine is proposed which has a dish-cleaning compartment, a dish-rack rotating mechanism, a re-circulating fluid spraying system, a non re-circulating fluid spraying system, a drainage mechanism, a waste filter tank and a controlling means. The dish-cleaning compartment includes a cover and a casing, which includes a re-circulating fluid spray arm and a non re-circulating fluid spray arm. Automatic chemical dispenser, hot air dish-drying system and ultraviolet light sterilizer are included as optional features. Dish-cleaning operation starts with a flush cycle and then follows by a wash cycle and a rinse cycle. A dish-drying operation is introduced at the end of the rinse cycle, to dry as well as to sanitize dishes.

Abstract: A process for removing residues from the microstructure of an object is provided, which comprises steps of preparing a remover including CO2, an additive for removing the residues and a co-solvent dissolving the additive in said CO2 at a pressurized fluid condition; and bringing the object into contact with the remover so as to remove the residues from the object. An apparatus for implementing the process is also provided.

Abstract: A cleaning apparatus includes upper and lower nozzle assemblies supplying a cleaning liquid to edge and bottom sections of a semiconductor substrate. The upper nozzle assembly has a first nozzle supplying the cleaning liquid onto the edge section, and second and third nozzles supplying a nitrogen gas for preventing the cleaning liquid from moving into a center portion of the semiconductor substrate. The cleaning liquid supplied to the edge section flows from the edge section towards a side section of the semiconductor substrate due to the rotation of the semiconductor substrate. An ultrasonic wave generator is provided above the edge section for generating ultrasonic waves. The ultrasonic waves are applied to the cleaning liquid supplied onto the edge and bottom sections, thereby improving the cleaning efficiency. The cleaning apparatus has a guide to guide the cleaning liquid supplied to the edge section toward the side section.

Abstract: Brass articles having leachable lead are contacted with an aqueous caustic solution that contains a chelating agent. A brass article can optionally be post-treated by contacting it with an aqueous solution containing hydrogen peroxide.

Abstract: The present invention provides a method of cleaning a chamber of a CVD machine and elements within. A gas mixture of carbon tetrafluoride (CF4) and perfluoro ethane (C2F6) is first injected into the chamber. After performing a surface treatment, comprising a sandblasting step or a polishing step, on the surfaces of the elements, the elements are then immersed in a cleaning solution, comprising at least ammonia water (NH4OH) and hydrogen peroxide (H2O2) at a temperature maintained between 40° C. to 70° C. Finally, the temperature of the cleaning solution is raised so that the residual layer on the surface of the elements can drop from the surfaces of the heater and the process kits or dissolve into the cleaning solution.

Abstract: An inexpensive and safe copper removal method in the fabrication of integrated circuits is described. Copper is stripped or removed by a chemical mixture comprising an ammonium salt, an amine, and water. The rate of copper stripping can be controlled by varying the concentration of the ammonium salt component and the amount of water in the mixture. Also a novel chemical mixture for stripping copper and removing copper contamination is provided. The novel chemical mixture for removing or stripping copper comprises an ammonium salt, an amine, and water. For example, the novel chemical mixture may comprise ammonium fluoride, water, and ethylenediamine in a ratio of 1:1:1.

Abstract: The present invention relates to a system and method for cleaning and/or treating a surface, preferably surfaces such as ceramic, steel, plastic, glass and/or painted surfaces such as the exterior surface of a vehicle. The system and method utilize a cleaning composition that contains at least one water-soluble or water dispersible copolymer. The method may also include a step of applying to the surface a treating composition which contains non-photoactive nanoparticles.

Abstract: A cleaning unit (A) includes a movable cart (20) which carries a cleaning system for cleaning baked-on residues from walls (10) of a sterilizer chamber (12). Alkaline and acid cleaning solutions (180, 182), for removing organic and inorganic residues, respectively, from the chamber, are stored in a multi-compartment container carried by the cart and having two storage compartments (52, 54). The alkaline and acid solutions are sequentially sprayed over the chamber walls and returned to their respective compartments. After cleaning is complete, a wall (200) which separates the two compartments is punctured. The two cleaning fluids are thereby mixed together to form a neutral or near neutral solution which is disposable in a sanitary sewer system without further treatment.

Abstract: A soft spray nozzle discharging a cleaning mist is vertically directed and fixed to an arm. A rinse nozzle discharging rinsing deionized water for suppressing obstruction is vertically fixed to the arm at a prescribed distance from the soft spray nozzle. During cleaning, it follows that both nozzles discharge detergents while keeping relative layout relation. Therefore, the discharged cleaning mist and rinsing deionized water do not interfere with each other before reaching the substrate but the used detergents are entirely horizontally splashed and recovered in a cup. Thus, the cleaning mist is prevented from scattering and adhering to the periphery.

Abstract: A cleaning unit (A) includes a movable cart (20) which carries a cleaning system for cleaning baked-on residues from walls (10) of a sterilizer chamber (12). The cleaning system includes a lid (80) which is mounted over an opening (82) to the chamber. In one embodiment, the door (232) of the chamber provides the lid. An articulating nozzle (124) extends from the lid into the interior of the chamber. Alkaline and acid cleaning solutions (180, 182), for removing organic and inorganic residues, respectively, from the chamber, are stored in two storage containers (52, 54) carried by the cart. A first pump (60), mounted on the cart, pumps first the alkaline, then the acid cleaning solution to the nozzle. A second pump (62), mounted on the cart, connects with a scavenge fitting (166) in the chamber to return the cleaning fluid to the respective storage container.

Abstract: An apparatus for treating metal which is capable of selectively monitoring and controlling various aspects of a multi-staged metal treatment process to more accurately and reliably administer treatment.

Abstract: A method of preparing a silicon surface for a subsequent processing said such as thermal oxidation, or metal silicide formation, via use of a novel wet chemical clean procedure, has been developed. The novel wet chemical clean procedure is comprised of three specific stages, with the first stage featuring the removal of organic contaminants and the growth of a native oxide layer on the silicon surface. A second stage features removal of the native oxide layer and removal of metallic contaminants from the silicon surface, while the third stage is used to dry the silicon surface. The novel wet chemical clean procedure is performed in less time, and using less chemicals, then counterpart wet chemical cleans also used for the preparation of silicon surfaces for subsequent processing steps.

Abstract: A method of repairing a thermal barrier coating on a component designed for use in a hostile thermal environment, such as turbine, combustor and augmentor components of a gas turbine engine. The method is particularly suited for completely removing a thermal insulating ceramic layer of thermal barrier coating system that includes a metallic bond coat, such as a diffusion aluminide or MCrAlY coating, between the surface of the component and the ceramic layer, while leaving the bond coat substantially undamaged. Furthermore, the method of this invention includes a technique by which ceramic material within cooling holes in the component can be removed without damaging the underlying bond coat. The process steps generally include removing the ceramic layer from the surface of the component by subjecting the ceramic layer to a caustic solution at an elevated temperature and pressure, and then removing ceramic material from the cooling hole by carefully directing a high-velocity fluid stream into the cooling hole.

Abstract: A surface of a light-metal alloy is anodically polarized in a cleaning process. The surface is cleaned with a solution containing phosphoric acid, alcohol, and optionally fluoride. Additionally, the surface is passivated in an oxidizing process using, for example, fluoride ions or an aqueous oxidizing agent. Preferably, the light-metal alloy has a relatively high Al or Mg content. This method is suitable for preparing the surface for a subsequent coating operation.

Abstract: A method is provided for cleaning a surface of a semiconductor wafer after a CMP operation. In one example, an improved cleaning chemical (ICC) is applied to the surface of the wafer. The ICC is configured to transform a copper film on the surface of the wafer into a water soluble form. The wafer surface is scrubbed. The wafer is then rinsed with a liquid. The scrubbing and the rinsing are configured to remove a controlled amount of the water soluble copper from the surface of the wafer and the brush, wherein the applying, the scrubbing, and the rinsing are performed in a brush box.

Abstract: A process for the wet-chemical surface treatment of a semiconductor wafer following a mechanical surface treatment, in particular following a mechanical surface treatment in a lapping machine, includes a sequence of treatment steps. The process essentially includes a wet-chemical surface cleaning, preferably for neutralizing and eliminating the lapping slurry, an acid etching treatment, preferably for eliminating the mechanically imposed damage and for surface smoothing and removal of metals. There is a final step of drying and rendering the cleaned and etched surface hydrophilic.

Abstract: A method of washing cookware/tableware in an automatic dishwashing machine having a pre-wash, main-wash and one or more rinse cycles wherein one or more dishwashing products are dosed into the one or more rinse cycles and wherein the dosing regime is such as to provide a rinse cycle concentration factor (Cr) of at least about 1.3×104, preferably at least about 1.8×104 more preferably at least about 2.4×104 and especially 3.

Abstract: A method for removing a slurry from a silicon wafer after chemical-polishing whereby the wafer is subjected to at least 2 or more chemical megasonic baths for a short duration of time. The pH of the first megasonic bath matches the pH of the slurry to be removed.

Abstract: A method for removing an acidic deposit containing a sulfur compound, which comprises contacting the acidic deposit with an aqueous solution of an alkali metal carbonate and/or an alkali metal hydrogencarbonate to remove it.

Abstract: The present invention provides methods of reducing particle contamination during wet processing of semiconductor substrates. In one embodiment of the present invention, a surfactant is added to any processing solution having a gas-liquid interface that the semiconductor substrates will be contacted with during immersion. The surfactant reduces the contact angle of the processing solution to less than 90° and inhibits deposition of particles onto the semiconductor substrates during immersion. In a preferred embodiment of the present invention, the semiconductor substrates are contacted with only one gas-liquid interface during wet processing that occurs during the immersion of the semiconductor substrates in an initial liquid processing solution. In this embodiment, the last processing solution in contact with the semiconductor substrates is removed by displacement with a drying fluid stream.

Abstract: A method of cleaning semiconductor wafers before the epitaxial deposition comprising (A) etching silicon wafers with HF; (B) rinsing the etched wafers with ozonated ultrapure water; (C) treating the rinsed wafers with dilute SC1; (D) rinsing the treated wafers; (E) treating the wafers with dilute HF; (F) rinsing the wafers with DI water; (G) drying the wafers with nitrogen and a trace amount of IPA; wherein steps (E) through (G) are conducted in a single dryer chamber and wafers are not removed from the chamber between steps. A system comprising a single tank adapted for cleaning, etching, rinsing, and drying the wafers has means to inject HF into a DI water stream.

Abstract: A mixture of a dibasic ester (DBE), an alcohol, a polar solvent and water to remove photoresist from a flat panel substrate. Photoresist is effectively removed at low temperature with this non-phenolic, non-halogenated stripper solution.

Abstract: The method of manufacturing a hydrogen-absorbing alloy electrode according to this invention comprises the steps of: dissolving a particle surface of said hydrogen-absorbing alloy by a surface-treatment solution; and washing the hydrogen-absorbing alloy with the particle surface dissolved using an alkaline solution at a temperature of 30° C.˜40° C. The metal ions dissolved by the surface-treatment solution can be completely washed away by the alkaline solution so that they will not be precipitated onto the surface of the hydrogen-absorbing alloy again as the hydroxide.

Abstract: A surface treatment, especially for titanium and aluminum alloys, forms a Si—Y sol-gel film covalently bonded on the metal surface to produce strong, durable adhesive bonds between the metal and an organic adhesive without using toxic chemicals and while significantly reducing or eliminating rinse water requirements of traditional anodizing or etching processes. The sol should produce bonds in a single application comparable in strength and performance to standard anodize controls. Parameters affecting performance include the sol composition, the ratio of silicon to yttrium in the sol, the ratio of other sol ingredients, the concentration of the sol, the carrier solvent, solution age, catalysts, surface pretreatment, application method, curing process, and primer used.

Abstract: A method for cleaning a silicon wafer by a wet bench method with improved cleaning efficiency and without oxide formation is disclosed. In the method, the wafer may first be cleaned in a first cleaning solution that includes a base or an acid, and then the wafer is rinsed in a second solution that includes DI water and ozone. The ozone concentration in the DI water may be between about 1 ppm and about 20 ppm, and preferably between about 3 ppm and about 10 ppm. A diluted HF cleaning step may be utilized after the ozone/DI water rinsing step to remove any possible oxide formation on the silicon surface before a final rinsing step and drying step.

Abstract: A resist film removing composition used in the manufacture of a thin film circuit element having an organic insulation film which comprises 50 to 70% by weight of an alkanolamine having 3 or more carbon atoms, 20 to 30% by weight of a water-miscible solvent and 10 to 20% by weight of water. The resist film removing composition can easily remove a resist film remaining after etching, without swelling the organic insulation film.

Abstract: An automatic control system is provided for acid concentration in an aluminum strip cleaning line wherein an aluminum strip is contacted with an acid solution while passing through an acid cleaning bath and the concentration of the acid in the bath is adjusted by adding either concentrated acid or water to the bath. A conductivity probe is provided in the acid bath and generates a first signal approximately proportional to the free acid concentration of the bath. An on-line process titrator periodically samples the acid bath and by a dual endpoint titration obtains the free acid concentration and total acid concentration of the bath and thereby generates a second signal indicative of the actual free acid concentration and the total acid concentration. These first and second signals are fed to a programmable logic controller, which based on the signal from the titrator calculates a correction factor for the signal from the conductivity probe to thereby obtain a corrected value for free acid concentration.

Abstract: A rinse-added fabric conditioning composition comprising a starch having a gelatinization temperature of less than 150 degrees C. and a method of imparting crispness properties to fabrics treated with same.

Abstract: Thus use of a post detergent step for removing aqueous residue from ware combined with a subsequent step using a potable rinse or a dilute solution of an aqueous food grade rinse aid to rinse alkaline washed ware provides significant advantages. The two step rinse method insures complete and sanitary cleaning of ware while permitting the use of different formulations in the post detergent step and the subsequent rinse step. Such process conditions permit the use of differing times and temperatures in the post detergent step and in the rinse step and permits the use of different formulations in the post detergent step and in the rinse step.

Abstract: The present invention relates to methods for cleaning, rinsing, and/or antimicrobial treatment of medical carts, medical cages, and other medical instruments, devices or equipment. The method for cleaning employs a solid alkaline, for example a solid carbonate, cleaning composition for cleaning the medical cart, cage, instrument, device, or equipment. The method for rinsing employs a solid neutral or neutralizing rinse composition for rinsing the medical cart, cage, instrument, device, or equipment. The method for antimicrobial treatment employs a solid, for example a solid quaternary ammonium or solid halogen, antimicrobial composition, for antimicrobial treatment of the medical cart, cage, instrument, device, or equipment.

Abstract: The present invention provides a method of removing residual particles from a polished surface. The method comprises the steps of: providing a substrate, forming a dielectric layer on the substrate, brush-cleaning and etching the dielectric layer on the substrate with a liquid when residual particles are trapped therein, whereby the residual particles are loosened and then relocated to the dielectric layer, and finally cleaning the dielectric layer to remove the relocated residual particles.

Abstract: Method for the cleaning and washing in situ of the soft type ice creams pressurized machines including the steps of: emptying of the ice cream contained in the machine freezing cylinder; removal of the liquid ice-cream mix container from the liquid ice-cream mix feeding circuit, and insertion into said circuit of a container containing water with a restrained lather light detergent dissolved in; starting up of the cleaning step, including a succession of water and detergent introductions into the freezing cylinder with steps of shaking and following openings of the ice cream extraction tap for the draining of the washing liquid; introduction of pressurized air into the cylinder for a few seconds in order to greatly reduce the amount of remaining water in the plant; repetition of the described cleaning operations for two or three more times; replacement of the container containing water and detergent with a container containing water and sanitizer; repetition of the described operations with water and sanitize

Abstract: A method and product for computer disk drives. Glass substrates are provided having low content of residual polishing particles on the surfaces thereof. An exemplary method includes reduction of residual polishing particle content by immersion of the glass substrate in an acid bath containing nitric acid, hydrogen peroxide and an organic acid having a carboxylic acid group.

Abstract: The present invention provides a method of cleaning a chamber of a CVD machine and elements within. A gas mixture of carbon tetrafluoride (CF4) and perfluoro ethane (C2F6) is first injected into the chamber. After performing a surface treatment, comprising a sandblasting step or a polishing step, on the surfaces of the elements, the elements are then immersed in a cleaning solution, comprising at least ammonia water (NH4OH) and hydrogen peroxide (H2O2) at a temperature maintained between 40° C. to 70° C. Finally, the temperature of the cleaning solution is raised so that the residual layer on the surface of the elements can drop from the surfaces of the heater and the process kits or dissolve into the cleaning solution.

Abstract: Dispensing device of washing agents for a household washing machine, in particular a dishwasher, said dispenser having at least a tank for a liquid washing agent and an arrangement for dispensing a dose of said liquid washing agent, wherein this arrangement comprises: a passage, being adapted to put the inside of the tank in hydraulic communication with a discharge outlet for said liquid washing agent; first plugging means, act on said passage and capable of taking a first position due to which the washing agent cannot reach said discharge outlet, and a second position due to which the washing agent is able to reach said discharge outlet; actuating means producing actuation of said first plugging means. According to the invention, controllable safety means act along said passage are provided, which normally operate for preventing washing agent downflow from said tank to said passage, independently from the position or state of the first plugging means.