Abstract: An apparatus and method for treating surfaces of semiconductor wafers with a reactive gas, such as ozone, utilizes streams of gaseous material ejected from a gas nozzle structure to create depressions on or holes through a boundary layer of processing fluid formed on a semiconductor wafer surface to increase the amount of reactive gas that reaches the wafer surface through the boundary layer. The apparatus and method may be used to clean a semiconductor wafer surface and/or grow an oxide layer on the wafer surface by oxidation.

Abstract: There is disclosed a substrate treating method comprising supplying a treating solution onto a substrate, and continuously discharging a first cleaning solution to the substrate from a first discharge region disposed in a nozzle, while moving the nozzle and substrate with respect to each other in one direction, wherein a length of a direction crossing at right angles to the direction of the first discharge region is equal to or more than a maximum diameter or longest side of the substrate, the nozzle continuously spouts a first gas to the substrate from a first jet region, and the length of a direction crossing at right angles to the direction of the first jet region is equal to or more than the maximum diameter or longest side of the substrate.

Abstract: A test fixture for an electronic device is provided that removes debris from a socket of the test fixture using back side air blow off. In general, the test fixture includes a circuit board, a socket on a front side of the circuit board, and an air manifold on a back side of the circuit board. Pressurized air is provided to the air manifold through an air supply inlet coupling the air manifold to an external pressurized air supply. At least one via formed through the circuit board fluidly couples the air manifold on the back side of the circuit board to the socket on the front side of the circuit board. Accordingly, the pressurized air from the air manifold flows through the vias and up through the socket such that debris is removed from the socket.

Abstract: A method of automatic cleaning of cooking cavities of cooking equipment for food processing includes the introduction of steam at a temperature of at least 100.deg. C. from a supply line and nozzle into a cooking cavity for a time period depending on the degree of disinfection desired. The cooking cavity is rinsed with the steam condensate; and the supply line and nozzle are flushed with demineralized water.

Abstract: A method of clearing residue from a fluid conduit includes commencing flush fluid flow through the fluid conduit and injecting a first fluid into the fluid conduit at a first point to induce turbulent flow of the flush fluid. The first fluid is preferably a gas. The method further includes sampling the flush fluid downstream of the first point to confirm the residue is adequately cleared from the fluid conduit.

Abstract: A general method and apparatus for treating materials at high speed comprises the steps of dissolving a relatively high concentration ozone gas in a solvent at a relatively low predetermined temperature T1 to form an ozone-solvent solution with a relatively high dissolved ozone concentration, and heating either the ozone-water solution or the material to be treated or both, the ozone-solvent solution and the material to be oxidized with a point-of-use heater to quickly increase the temperature to a predetermined higher temperature T2>T1, and applying the ozone-solvent solution to said material(s) whereby the heated ozone-water solution will have a much higher dissolved ozone concentration at said higher temperature, than could be achieved if the ozone gas was initially dissolved in water at said higher temperature.

Abstract: Provided herein is a method for cleaning a process chamber for semiconductor and/or flat panel display manufacturing. This method comprises the steps of converting a non-cleaning feed gas to a cleaning gas in a remote location and then delivering the cleaning gas to the process chamber for cleaning. Such method may further comprise the step of activating the cleaning gas outside the chamber before the delivery of the gas to the chamber. Also provided is a method of eliminating non-cleaning feed gas from the cleaning gas by cryo condensation.

Abstract: A cleaning tool for cleaning substrates, comprising a circulation conduit through which is circulated a cleaning liquid or gas. The circulation conduit is disposed in fluid communication with an upstream flow chamber and a downstream cleaning chamber, the cross-sectional area of which cleaning chamber is less than the cross-sectional area of the flow chamber. In use, the cleaning chamber receives a wafer substrate for cleaning of particles or removal of polymer films from the substrate. The smaller cross-sectional area of the cleaning chamber accelerates the flow of a cleaning fluid flowing through the cleaning chamber from the flow chamber. The rapidly-flowing cleaning fluid removes the particles and/or films from the substrate while preventing dropping of the removed particles or re-deposition of the film back onto the substrate. A particle filter may be provided in the circulation conduit downstream of the cleaning chamber for removing the particles.

Abstract: New and in-use fire sprinkler systems can be sterilized by employing antimicrobial gases. The gases include steam, oxygen, and chlorine. Water added to the system after sterilization can be sterilized to prevent the reoccurrence of microbiological contamination.

Abstract: The present invention is directed towards the use of a reactive gas or vapor of a reactive liquid prior to or in combination with cryogenic cleaning to remove contaminants from the semiconductor surfaces or other substrate surfaces requiring precision cleaning. The reactive gas or vapor is selected according to the contaminants to be removed and the reactivity of the gas or vapor with the contaminants. Preferably, this reaction forms a gaseous byproduct which is removed from the substrate surface by the flow of nitrogen across the surface.

Abstract: A cleaning method and an etching method for removing, by cleaning grease components and silicon micro pieces hard to remove, used for an apparatus and a carrier for manufacturing a semiconductor wafer or a semiconductor device. Matters to be removed are brought into contact with XeF2 gas produced by sublimation in a vacuum atmosphere to decompose and gasify the grease components and to remove silicon pieces by etching. If a trace of residual water is left in the vacuum atmosphere before the cleaning, the H2O reacts with XeF2, so that HF is produced. Therefore, for example, the native oxide SiO2 formed on the silicon pieces can be removed, and XeF2 can directly react with silicon, thereby enabling etching. The cleaning and etching speeds are extremely accelerated.

Abstract: Disclosed are systems and methods for removing stubborn contaminants, aluminum fluoride and aluminum chloride in particular, from components of semiconductor-processing equipment. One embodiment forces steam through small holes in a gas distribution plate to remove build up on the interior walls of the holes. A cleaning fixture disposed between the steam source and the gas distribution plate delivers the steam at increased pressures. The gas distribution plate can be immersed in water during cleaning to capture the exiting steam.

Abstract: Disclosed is a novel process for cleaning and restoring the operating efficiency of organic liquid chemical exchangers in a safe and effective manner and in a very short period of time, without a need to disassemble the equipment and without the need to rinse contaminate from the equipment after cleaning. Used is a formulation of monocyclic saturated terpene mixed with a non-ionic surfactant package specifically suited to oil rinsing. The terpene-based chemical is injected into organically contaminated exchangers using a novel process involving high-pressure steam to form a very effective cleaning vapor.

Abstract: The present invention relates to a method for cleaning a pressurized container having at least one chemical contained therein such as, for example, chlorine gas or sulfur dioxide gas. The pressurized container may be any type of container able to store chemicals under pressure. Preferably, however, the container may be a rail tank car. Generally, the method may include steps for injecting the container with a quantity of input gas to form an input gas/chemical mixture and removing the input gas/chemical mixture from the container via a vacuum pump. input gas/chemical mixture may be pushed into a reaction tank for neutralization of the chemical by a neutralizing solution.

Abstract: A cleaning method for removing fats, oils, and silicon small particles, which are conventionally difficult to remove, adhering to devices and carriers used to manufacture a semiconductor wafer or a semiconductor device. An etching method is also disclosed. XeF2 gas produced by sublimation is made to contact with an object to be cleaned in a vacuum atmosphere so as to decompose and gasify the oils and fats and to remove silicon small particles by etching. Prior to the cleaning, when a trace amount of residual water is left in the vacuum atmosphere, H2O reacts with XeF2, and HF is produced. For example, a native oxide SiO2 formed on the surface of silicon small particles can be removed, and XeF2 directly reacts with silicon, therby enabling etching. The cleaning etching rates are extremely high.

Abstract: The present invention discloses a method for the removal of a number of molecular contaminants from surfaces within a device. A purge gas containing oxygen and/or water is introduced into the interior of the device, contacting at least a portion of the interior surfaces. A contaminated purge gas is produced by transferring a portion of the contamination from the interior surfaces into the purge gas. The contaminated purge gas is removed from the device and the process is continued until the contaminant concentration in the contaminated purge gas is below a predetermined level.

Abstract: The present invention is directed toward methods for cleaning catalytic converters, particularly it pertains to methods of submerging a catalytic converter into an aqueous bath and applying a pressurized fluid through the catalytic converter forcing ash from the channels within the catalytic converter.

Abstract: A method and an apparatus capable of stripping resist efficiently in a short amount of time. A stripping solution under high pressure is jetted from a nozzle to a rotating wafer. The resist layer on the wafer is applied with the jetted stripping solution, and the resist layer can be efficiently stripped in a short amount of time by the multiplied effect by the physical effect caused by the impact of the jetted stripping solution and the chemical effect of the stripping solution.

Abstract: Provided is a process and apparatus characterized by a gas distribution plate in which a gas supply manifold directs gas bubbles from the bottom of a process tank upward and between wafers contained in a cassette and supported therewithin. This improved method and apparatus is used for effectively stripping photoresist from the larger semiconductor wafers having dense top conductive patterns with protuberant sidewalls. The method provides a scrubbing action that is parallel to the device array being formed on the wafer's surface. Broadly stated, the method of a chemical action on large substrates supported adjacent respective edge portions thereof in a carrier includes submerging the carrier and substrates supported thereby in a process tank containing a liquid chemical, and a gas distribution plate disposed on the bottom of the tank for directing gas bubbles upward and parallel to the surfaces of each substrate contained in the carrier to ensure that a uniform chemical action occurs.

Abstract: The present invention involves a solvent vapor transfer device for holding an absorbent pad, which receives and disperses solvent vapors over a lacquer-based residue on a textile. A solvent is poured or dripped into an absorbent pad portion of the vapor transfer box, from which solvent vapors are released. The solvent vapors pass through the vapor transfer box and concentrate in a vapor chamber over the lacquer-based residue and textile. As the solvent vapors come into continuous contact with the lacquer-based residue, the residue begins to dissolve and soften. Upon sufficient dissolution, minute quantities of the liquid solvent may be applied directly to the partially dissolved residue and quickly suctioned into an extraction vacuum. This process may be repeated as necessary to achieve complete removal of the residue.

Abstract: An apparatus and method for cleaning objects having generally irregular surface features, such as reloadable photographic cameras, has a partial enclosure having opposing side walls, and a top wall joining the opposing side walls. An air ionizing element composed of an ion emitter and an air knife is arranged in the enclosure for electrostatically neutralizing the object with ions entrained in a curtain-like stream of air directed onto the object.

Abstract: A method of cleaning the interior of a processing chamber first performs a halogenation treatment by supplying a treatment gas containing a halogenating gas into the processing chamber and heating a support member for a target substrate, thereby halogenating a metal element in a by-product film. A reduction treatment is then performed by supplying a treatment gas containing a reducing gas into the processing chamber, thereby reducing a halide of the metal element and liberating the metal element. An oxidation treatment is then performed by supplying a treatment gas containing an oxidizing gas into the processing chamber and heating the casing walls of the processing chamber, thereby passivating the liberated metal element by oxidation.

Abstract: Disclosed is a novel process for interior cleaning and by cleaning, removing noxious gas and/or restoring the operating efficiency of organically contaminated hydrocarbon processing equipment in a safe and effective manner and in a very short period of time, without a need to manually enter an unsafe environment and mechanically remove organic contaminants. Used is a formulation of non-aqueous, monocyclic saturated terpene mixed with a non-ionic surfactant package. The terpene-based chemical is injected into organically contaminated equipment using a novel process involving high-pressure steam to form a very effective cleaning vapor.

Abstract: The stripping agent is sprayed from the tip of the nozzle 33 onto the wafer surface, while the first supply nozzle 33 is actuated to scan from the central portion of the wafer to the outer portion thereof. This operation provides the situation, in which the interface of the residual droplet 38 is pulled back from the center of the wafer to the outer portion of the wafer by the surface tension of the stripping agent supplied from the nozzle. Meanwhile, the second supply nozzle 36 also scans at a same scanning speed as the first supply nozzle 33 scans. Vapor IPA is sprayed from the orifice of the second supply nozzle 36. This provides that vapor IPA is sprayed onto the wafer surface immediately after the stripping agent is sprayed thereon from the first supply nozzle 33, and the residual stripping agent on the wafer surface is efficiently replaced with IPA.

Abstract: The present invention relates to a method for preventing the deposition of contaminants in steam systems. In a method of this type, deposits are prevented in a simple and economic manner by metering an additive into the steam, which additive adheres to the steam-side surface of the steam system and has the effect of repelling moisture and contaminants.

Abstract: A method of removing a virgin metal oxide coating from the surface of a superalloy gas turbine engine component. The component bearing the applied metal oxide coating is contacted with an aqueous coating-removal solution, typically containing by weight about 10-25% alkali hydroxide, about 1-8% alkanolamine, and about 0.5-5% gluconate salt at a temperature of from about 170° F. (67° C.) to about 210° F. (99° C.), for a time sufficient to remove the metal oxide coating from the superalloy blade by gentle mechanical means. The metal oxide coating can comprise one or more metal oxide layers, such as a chromium oxide layer and an aluminum oxide layer.

Abstract: A method and apparatus are provided for removing solid and/or liquid residues from electronic components such as semiconductor wafers utilizing liquid or supercritical carbon dioxide which is solidified on the surface of the wafer and then vaporized and removed from the system. In a preferred embodiment the solidification and vaporizing steps are repeated (cycled) before removal of the CO2 from the vessel. The residues are carried away with the vaporized carbon dioxide.

Abstract: A method for performing the edge clean operation on a semiconductor wafer. A laser beam is used to accurately clean the edge of the wafer. The wafer is clamped concentrically to a chuck and rotated at a selectable speed, preferably in the range of 10 rpm to 1,000 rpm. A laser beam of variable power is directed onto toward the edge of the wafer at an oblique angle through a nozzle through which an inert purge gas is simultaneously passed. The laser beam removes unwanted deposits at the edge of the wafer and the gas is used to blow away the residue and prevent slag buildup on other parts of the wafer. The process is preferably carried out in an exhausted chamber.

Abstract: An immersion processing system is provided for cleaning wafers with an increased efficiency of chemical use. Such a system advantageously uses less cleaning enhancement substance that may be provided as gas, vapor or liquid directly to a meniscus or wafer/liquid/gas bath interface so as to effectively modify surface tensions at the meniscus with minimized chemical usage. Such a delivery system design may be applied for single wafer processing or for processing multiple wafers together within a single liquid bath vessel. For single wafer processing, in particular, cleaning enhancement substance can be delivered along one or both major sides of the wafer, preferably at the meniscus that is formed as the wafer and liquid are relatively moved, while a processing vessel usable for such single wafer processing may itself be designed with a minimized size to accommodate a single wafer.

Abstract: Disclosed is a novel process for interior cleaning and by cleaning, removing noxious gas and/or restoring the operating efficiency of organically contaminated hydrocarbon processing dynamic devices in a safe and effective manner and in a very short period of time, without a need to manually enter an unsafe environment and mechanically remove organic contaminants. Used is a formulation of non-aqueous, monocyclic saturated terpene mixed with a non-ionic surfactant package. The terpene-based chemical is injected into the organically contaminated device using a novel process involving high-pressure steam to form a very effective cleaning vapor. The device is activated during the process. The vapor may be optionally directed against the normal-flow direction of the device.

Abstract: Where a substrate such as a semiconductor wafer held in a process space in a process chamber consisting of an outside chamber and an inside chamber is subjected to a cleaning processing, a chemical agent such as IPA or a solvent having a surfactant added thereto is supplied in the form of a mist or a vapor toward the substrate under the sate that the substrate is stopped or rotated at a low speed after processing with a chemical agent and a subsequent rinsing processing with a pure water. After the supply of the chemical agent is stopped, the substrate is rotated at a rotating speed higher than said low speed so as to centrifugally remove the chemical agent attached to the substrate.

Abstract: A method of cleaning surfaces using a mixed phase cleaning mixture of an aqueous solution and a flow of gas sufficient to produce droplets of the liquid which are entrained by the gas for a time sufficient to clean tubing of various lengths and geometries and porous membranes to remove biofilm, debris and contaminants.

Abstract: There is provided a method for surface treating where the environmental load is small. The surface treating method of the invention comprises that a cluster bonded by the first molecule and the second molecule by means of an intermolecular force is produced in a gas phase. At least a part of internal energy released in producing the cluster is utilized whereby the first molecule contained in the cluster is made in a state having higher reactivity than that of the first molecular not bonded with the second molecular. The surface of the member to be treated is treated in a gas phase with the cluster containing the first molecule made in a state of higher reactivity.

Abstract: Provided herein is a method for cleaning a process chamber for semiconductor and/or flat panel display manufacturing. This method comprises the steps of converting a non-cleaning feed gas to a cleaning gas in a remote location and then delivering the cleaning gas to the process chamber for cleaning. Such method may further comprise the step of activating the cleaning gas outside the chamber before the delivery of the gas to the chamber. Also provided is a method of eliminating non-cleaning feed gas from the cleaning gas by cryo condensation.

Abstract: The invention encompasses methods for cleaning surfaces of wafers or other semiconductor articles. Oxidizing is performed using an oxidation solution which is wetted onto the surface. The oxidation solution can include one or more of: water, ozone, hydrogen chloride, sulfuric acid, or hydrogen peroxide. A rinsing step removes the oxidation solution and inhibits further activity. The rinsed surface is thereafter preferably subjected to a drying step. The surface is exposed to an oxide removal vapor to remove semiconductor oxide therefrom. The oxide removal vapor can include one or more of: acids, such as a hydrogen halide, for example hydrogen fluoride or hydrogen chloride; water; isopropyl alcohol; or ozone. The processes can use centrifugal processing and spraying actions.

Abstract: The present invention provides a system (200, 300) for remediating aberrations along the perimeter of a semiconductor wafer (202). The system includes a cleaning apparatus (204) within which the wafer is spun within a confined area. A chuck (208) defines the confined area, having a sidewall that extends above the upper surface (214) of the wafer and surrounds the perimeter of the wafer. The chuck also has a bottom wall, with an aperture formed therein, beneath the wafer. The system includes an isolation barrier (220), disposed atop the bottom wall of the chuck and around the aperture, in proximity to the lower surface so of the wafer. This forms a narrow gap (226) between the barrier and the wafer. A pressurized source forcefully directs a gas (218) at and along the lower surface of the wafer. The system also includes a remediation solution (228) that is applied to the upper surface of the wafer.

Abstract: The invention encompasses methods for cleaning surfaces of wafers or other semiconductor articles. Oxidizing is performed using an oxidation solution which is wetted onto the surface. The oxidation solution can include one or more of: water, ozone, hydrogen chloride, sulfuric acid, or hydrogen peroxide. A rinsing step removes the oxidation solution and inhibits further activity. The rinsed surface is thereafter preferably subjected to a drying step. The surface is exposed to an oxide removal vapor to remove semiconductor oxide therefrom. The oxide removal vapor can include one or more of: acids, such as a hydrogen halide, for example hydrogen fluoride or hydrogen chloride; water; isopropyl alcohol; or ozone. The processes can use centrifugal processing and spraying actions.

Abstract: A method of removing first molecules adsorbed on the surfaces of a chamber and/or at least one object found in the chamber is provided. Second, polar molecules that have a desorptive effect on the first molecules are introduced into the chamber. The second molecules comprise nitrogen and hydrogen, and especially NH3 molecules.

Abstract: The present invention provides a method and process for removing adherent molten metal from a surface by applying a non-wetting agent for the metal to the surface or to the adherent molten metal. The non-wetting agent may be a pressurized fluid or applied by a pressurized fluid.

Abstract: A cleaner and method for removing excess residual cleaning fluid from an object, particularly a semiconductor wafer, before or as the wafer is removed from a cleaning chamber of a CMP cleaner, for example. Typically, a purge bar is mounted on each side of the cleaning chamber for blowing nitrogen or clean, dry air (CDA) against a corresponding surface of the wafer to remove the excess cleaning fluid from the wafer. The purge bars may be connected to a controller for a wafer transfer device which removes the wafer from the cleaning chamber, such that the purge bars are actuated as the wafer transfer device begins to remove the wafer from the chamber.

Abstract: A method of inspecting a concrete surface. The method comprises ejecting highly pressurized water to a concrete surface by using a jet nozzle, thereby fracturing and spalling off deteriorated concrete deteriorated in strength, with leaving only sound concrete, for inspection of surface strength.

Abstract: A method of cleaning process residues from the surface of a substrate processing chamber component having holes. In the method, the component is at least partially immersed into a cleaning solution having hydrafluoric acid and nitric acid, and a non-reactive gas is passed through the holes to prevent the cleaning solution from back-flowing into the holes during the cleaning process. The method is particularly useful for cleaning sputtering residue deposits from an electrostatic chuck used in a sputtering process.

Abstract: Water-free, gaseous sulfur trioxide is used as an agent to remove various organic coatings, films, layers and residues from the surface of a substrate when used in conjunction with certain other physical and chemical treatments applied at the appropriate time during the process.

Abstract: A semiconductor wafer processing apparatus (10) includes a front-end robot (28), a wafer scrubber/dryer (30), a moisture detector (34) and a load/lock chamber (38, 40). The front-end robot (28) moves a wafer to be processed between the wafer cassette (21-24), the wafer scrubber (30), the moisture detector (34) and the load/lock chamber (38, 40). Optionally, the load/lock chamber (38, 40) may include an additional moisture detector. The load/lock chamber (38, 40) functions as an interface to a vacuum processing chamber (50, 52, 54) for performing various deposition processing steps where introduction of moisture would be destructive to the wafer.

Abstract: A new and improved process for rinsing and drying a wafer to remove photoresist stripping chemicals and residue from the wafer during a photoresist stripping operation. The rinsing and drying process includes dispensing a heated rinsing liquid onto the wafer followed by application of a heated drying gas against the wafer to dry the rinsing liquid from the wafer. Heating of the rinsing liquid and drying gas facilitates expedited rinsing and drying, respectively, of the wafer, resulting in increased wafer throughput and enhanced efficiency of the photoresist stripping process.

Abstract: A method of sampling contaminants of a semiconductor wafer carrier. The method includes placing a tool chamber in a clean room and then placing and fixing the semiconductor wafer carrier with its opening facing downward inside the tool chamber. Then the method includes using at least one nozzle to spray extraction fluid uniformly on the inner surfaces of the semiconductor wafer carrier and collecting the extraction fluid.

Abstract: Provided herein is a method for cleaning a process chamber for semiconductor and/or flat panel display manufacturing. This method comprises the steps of converting a non-cleaning feed gas to a cleaning gas in a remote location and then delivering the cleaning gas to the process chamber for cleaning. Such method may further comprise the step of activating the cleaning gas outside the chamber before the delivery of the gas to the chamber. Also provided is a method of eliminating non-cleaning feed gas from the cleaning gas by cryo condensation.

Abstract: A semiconductor water is contained in a reaction tube, and the reaction tube is exhausted through an exhaust pipe while supplying ammonia and dichlorosilane into the reaction tube. A silicon nitride film is deposited on an object to be heat-treated by a reaction of ammonia and dichlorosilane. Subsequently, TEOS is supplied into the reaction tube, while the reaction tube is exhausted through the exhaust pipe. A silicon oxide film is deposited on the object by resolving the TEOS. A semiconductor wafer an which a laminated layer of the silicon nitride film and the silicon oxide film is formed is unloaded from the reaction tube. Then, reactive products attached into the exhaust pipe and the reaction tube are removed, by conducting fluoride hydrogen thereinto, thereby cleaning the pipers The top end of the exhaust pipe is split into two vents, either one of which is used for discharging exhaust gas for forming films and the other one of which is used for discharging HF gas for cleaning the pipes.

Abstract: A device and method for processing substrates, whereby medium consumption and processing time are reduced. According to the inventive method, liquid is conducted to a surface of the substrate that is to be treated via at least one nozzle that is arranged in a substantially centric position with respect to said substrate and via a plurality of second nozzles that are controlled separately from the first nozzle.

Abstract: A semiconductor device production method that is used to uniformly and efficiently reduce metal oxides produced on metal (copper, for example) which forms electrodes or wirings on a semiconductor device. An object to be treated on which copper oxides are produced is put into a process chamber and is heated by a heater to a predetermined temperature. Then carboxylic acid stored in a storage tank is vaporized by a carburetor. The vaporized carboxylic acid, together with carrier gas, is introduced into the process chamber via a treating gas feed pipe to reduce the copper oxides produced on the object to be treated to metal copper. As a result, metal oxides can be reduced uniformly without making the surfaces of electrodes or wirings irregular. Moreover, in this case, carbon dioxide and water are both produced in a gaseous state. This prevents impurities from remaining on the surface of copper.