Abstract: The invention relates to a acidic composition for cleaning surfaces of metal or alloys which are susceptible to corrosion comprising i) an ester of phosphoric acid, diphosphoric acid or polyphosphoric acid, ii) a benzotriazole derivative of the general formula (I) in which each of the groups R1, R2, R3, R4 and R5 is the same or different and is hydrogen atom, an alkyl group, an alkenyl group, or an acyl group, iii) a phosphonic acid of the general formula R6—PO—(OH)2 (II) in which the group R6 is alkyl group, alkenyl group, aryl group, or arylalkyl group and iv) an acidic source. The invention further relates to a use solution and to a method for cleaning.

Abstract: Some embodiments include methods of treating surfaces with aerosol particles. The aerosol particles may be formed as liquid particles, and then passed through a chamber under conditions which change the elasticity of the particles prior to impacting a surface with the particles. The change in elasticity may be an increase in the elasticity, or a decrease in the elasticity. The change in elasticity may be accomplished by causing a phase change of one or more components of the aerosol particles such as, for example, by at least partially freezing the aerosol particles, or by forming entrained bubbles within the aerosol particles. Some embodiments include apparatuses that may be utilized during treatment of surfaces with aerosol particles.

Abstract: A biodegradable acid cleaning composition for cleaning stainless steel, and other surfaces is disclosed. The composition comprises urea sulfate in combination with gluconic acid which serves as a corrosion inhibitor. The composition retains the cleaning and corrosion prevention properties of similar phosphoric acid solutions but is safe for the environment and is less expensive to produce. Applicants have surprisingly found that the traditionally alkaline corrosion inhibitor, gluconic acid, can work effectively in an acidic cleaning composition.

Abstract: Compositions, methods, and systems permit selectively etching metal oxide from reactor metal parts (e.g., titanium and/or titanium alloys). The etching composition comprises an alkali metal hydroxide and gallic acid. The method is useful for cleaning reaction chambers used in the deposition of metal oxide films such as aluminum oxide.

Abstract: A process for treating the surface of a substrate in the manufacture of a semiconductor device. The process comprises providing a concentrated acid or base, a peroxide and water, and delivering the acid or base, the peroxide and the water to the surface of the substrate. The acid or base and the water are delivered separately to the surface of the substrate and allowed to mix on the surface, and the water is delivered in pulses. The present invention also provides an apparatus adapted to carry out this process.

Abstract: The pickling of a continuously running steel strip and, more particularly, a pickling method, includes centralized control of all of the pickling operations. The invention further includes an apparatus for implementing the pickling process.

Abstract: Novel devices for synthesizing ferrate and uses thereof are described. One aspect of the invention relates to devices and systems for synthesizing ferrate at a site proximal to the site of use.

Abstract: A method for treating a cathode electrode assembly. The method includes providing an electrode including iron disulfide and contacting the electrode with a solution including acid to remove impurities from the electrode. The electrode may then be dried under various conditions. The moisture content of the electrode after drying may be less than about 2500 ppm.

Abstract: A process for reducing or suppressing the appearance of watermarks in a hydrophobic surface of a semiconductor substrate prepared as a base substrate for epitaxial growth. The process includes cleaning the hydrophobic surface of the semiconductor substrate with an aqueous solution containing hydrofluoric acid (HF) and an additional acid having a pKa of less than 3, preferably hydrochloric acid (HCl), wherein the additional acid is present in the solution at a concentration by weight that is less than that of the HF; and final rinsing the cleaned hydrophobic surface of the semiconductor substrate with deionised water while subjecting the hydrophobic surface of the semiconductor substrate to megasonic waves for a time sufficient to reduce or suppress watermarks that could otherwise occur on the hydrophobic surface if the megasonic waves were not applied.

Abstract: The disclosed embodiments are directed to processes for removing photoreceptor coatings from a substrate, wherein the photoreceptor coatings disposed over a substrate of an electrophotographic photoreceptor. More specifically, the invention discloses a photoreceptor coatings removal process comprises subjecting an electrophotographic photoreceptor to a stripping solution that separates the coatings from the substrate.

Abstract: During the processing of substrates, the substrate surface may be subjected to a cleaning process using supercritical CO2. Surface matter may remain, for example, because it is only minimally soluble in the supercritical CO2. For example, an oxidation cleaning process causes the substrate structure to cleave at several points leaving smaller fragments of oxidized residue behind. This residue has only minimal solubility in supercritical CO2 due to the polar constituents resulting from oxidation. The method thus further includes processing the substrate with supercritical CO2 and a functionalizing agent that can react with the smaller fragments and/or other less soluble components. These functionalized components are rendered more soluble in supercritical CO2 and are more easily removed than their predecessors.

Abstract: The invention includes methods in which one or more components of a carboxylic acid having an aqueous acidic dissociation constant of at least 1×10?6 are utilized during the etch of oxide (such as silicon dioxide or doped silicon dioxide). Two or more carboxylic acids can be utilized. Exemplary carboxylic acids include trichloroacetic acid, maleic acid, and citric acid.

Abstract: Non-metallic deposits are selectively removed from aluminum containing substrates such as aluminum faceplates using a selective deposition removal (SDR) solution. The SDR solution does not substantially etch the faceplate holes, thereby preserving the hole diameter integrity and increasing the number of times the faceplate may be cleaned or refurbished while remaining within processing hole diameter tolerances. In an embodiment, the SDR solution comprises, in wt % of the solution, 15.5%+/?2% HF or buffered HF acid, 3.8%+/?0.5% NH4F pH buffer, 59.7%+/?5% ethylene glycol, and the balance H2O.

Abstract: Disclosed is a producing method of a semiconductor device comprising a first step of supplying a first reactant to a substrate to cause a ligand-exchange reaction between a ligand of the first reactant and a ligand as a reactive site existing on a surface of the substrate, a second step of removing a surplus of the first reactant, a third step of supplying a second reactant to the substrate to cause a ligand-exchange reaction to change the ligand after the exchange in the first step into a reactive site, a fourth step of removing a surplus of the second reactant, and a fifth step of supplying a plasma-excited third reactant to the substrate to cause a ligand-exchange reaction to exchange a ligand which has not been exchange-reacted into the reactive site in the third step into the reactive site, wherein the first to fifth steps are repeated predetermined times.

Abstract: The invention provides an aqueous composition that includes a hydroxy-substituted mono-, di-, or tri-carboxylic acid; phosphoric acid; a surfactant; and water. The invention further provides a method for removing lead from the surface of metal, the method includes contacting a metal surface with an aqueous composition that includes a hydroxy-substituted mono-, di-, or tri-carboxylic acid; phosphoric acid; a surfactant; and water; to provide a metal surface with a reduced amount of leachable lead. The leachable lead on the surface of the metal can be reduced to below 1 ppb by using the composition described herein.

Abstract: Apparatus to clean silicon electrode assembly surfaces which controls or eliminates possible chemical attack of electrode assembly bonding materials, and eliminates direct handling contact with the parts to be cleaned during acid treatment, spray rinse, blow dry, bake and bagging. Aspects of the apparatus include a kit including an electrode carrier to hold an electrode assembly, a treatment stand to allow access to the electrode assembly, a spider plate to clamp the electrode assembly in the electrode carrier, a nitrogen purge plate to supply nitrogen gas to the backside of the electrode assembly during acid cleaning of the electrode, a water rinse plate to supply water to the electrode face, a blow dry plate to supply nitrogen to dry the electrode assembly and a bake stand to support the electrode assembly during a bake before placing the clean electrode assembly in a bag.

Abstract: A conductor cleaning system for cleaning aluminum strands of all aluminum and steel reinforced conductors, such as ACSS, ACSR, ACAR, and AAA. The conductor cleaning system having a container adapted to receive a portion of a conductor to be cleaned, a housing adapted to receive and support the container, and a cleaning solution contained in the container for cleaning the portion of the conductor. The cleaning solution being adapted to clean the conductor without reacting with or damaging the conductor.

Abstract: Embodiments of the current invention describe a cleaning solution for the removal of high dose implanted photoresist, along with methods of applying the cleaning solution to remove the high dose implanted photoresist and combinatorially developing the cleaning solution.

Abstract: A substrate processing apparatus and a substrate processing method, with which a resist can be removed satisfactorily from the substrate and a processing solution used for removing the resist can be recycled, are provided. The substrate processing apparatus includes: a substrate holding means holding a substrate; a peroxosulfuric acid generating means generating a peroxosulfuric acid using sulfuric acid; a mixing means mixing the peroxosulfuric acid generated by the peroxosulfuric acid generating means and sulfuric acid of higher temperature and higher concentration than the sulfuric acid used in the peroxosulfuric acid generating means; and a discharging means discharging, toward the substrate held by the substrate holding means, the mixed solution of the peroxosulfuric acid and the sulfuric acid mixed by the mixing means as a processing solution for removing a resist from the substrate.

Abstract: The cleaning of silicon carbide materials on a large-scale is described. Certain silicon carbide materials in the form of wafer-lift pins, wafer-rings and/or wafer-showerheads are cleaned by using a combination of two of more of the following steps, comprising: high temperature oxidation, scrubbing, ultrasonic assisted etching in an aqueous acid solution, ultrasonication in deionized water, immersion in an aqueous acid solution, and high temperature baking. The silicon carbide materials may either be sintered or formed by chemical vapor deposition.

Abstract: A method of removing metallic copper from a steel surface defining a bore or cylinder of a gun is provided. The method involves contacting the surface with a composition comprising a polyphosphonic acid, a hydroxyl-substituted primary amine, and water.

Abstract: A method for fabricating a CMOS integrated circuit (IC) includes providing a substrate having a semiconductor surface, wherein the semiconductor surface has PMOS regions for PMOS devices and NMOS regions for NMOS devices. A gate dielectric layer is formed on the semiconductor surface followed by forming at least a first metal including layer on the gate dielectric layer. A polysilicon or amorphous silicon layer is formed on the first metal including layer to form an intermediate gate electrode stack. A masking pattern is formed on the intermediate gate electrode stack. The polysilicon or amorphous silicon layer is dry etched using the masking pattern to define a patterned intermediate gate electrode stack over the NMOS or PMOS regions, wherein the dry etching stops on a portion of the first metal comprising layer. The masking pattern is removed using a first post etch clean for stripping the masking pattern.

Abstract: The present invention relates to a method for cleaning polycrystalline silicon fragments to a metal content of <100 ppbw, wherein a polysilicon fraction is added to an aqueous cleaning solution containing HF and H2O2, this aqueous cleaning solution is removed and the polycrystalline fraction thereby obtained is washed with highly pure water and subsequently dried.

Abstract: A process for cleaning a silicon electrode is provided where the silicon electrode is soaked in an agitated aqueous detergent solution and rinsed with water following removal from the aqueous detergent solution. The rinsed silicon electrode is then soaked in an agitated isopropyl alcohol (IPA) solution and rinsed. The silicon electrode is then subjected to an ultrasonic cleaning operation in water following removal from the IPA solution. Contaminants are then removed from the silicon electrode by soaking the silicon electrode in an agitated mixed acid solution comprising hydrofluoric acid, nitric acid, acetic acid, and water. The silicon electrode is subjected to an additional ultrasonic cleaning operation following removal from the mixed acid solution and is subsequently rinsed and dried. In other embodiments of the present disclosure, it is contemplated that the silicon electrode can be soaked in either the agitated aqueous detergent solution, the agitated isopropyl alcohol (IPA) solution, or both.

Abstract: Chemical method of cleaning metallic residue from forming tools utilizing the application of a caustic material including base or mild acid to the tool for a short period of time. The caustic material is held in substantially fixed relation for a period of time to dislodge the metallic residue followed by neutralization or removal.

Abstract: The disclosure provides mixed acid solutions for cleaning a vessel, such as a vessel used for growing a GaAs crystal, comprising nitric acid, hydrofluoric acid and water. Further, the disclosure also provides exemplary methods for cleaning a vessel for growing a GaAs crystal, by: a) immersing the vessel in a mixed acid solution; b) immersing the vessel in an ammonia solution; c) cleansing the vessel with a surfactant solution under supersonic vibration; and d) cleansing the vessel with deionized water under supersonic vibration.

Abstract: Core rods or other glass components associated with optical fiber preforms are cleaned by loading them into a number of first sleeves, and partially obstructing entrance and exit ends of the sleeves to retain the components. The sleeves are contained inside a second sleeve so that the entrance ends of the first sleeves face an entrance end of the second sleeve. A fluid delivery system supplies cleaning fluids to the entrance end of the second sleeve, so that the fluids enter the first sleeves and contact exposed surfaces of the loaded components. The fluids leave the exit ends of the first sleeves and purge from an exit end of the second sleeve. Separators may be placed between the components in the first sleeves to enhance cleaning action and to cushion adjacent end faces of the components. Cleaned components may be unloaded from the first sleeves without risk of contamination.

Abstract: A water treatment system includes a circulation pump and an electrolytic chamber in fluid communication with a main body of water. Electrolytic plates within the electrolytic chamber generate chlorine. When mineral deposits foul the electrolytic plates, water is isolated within the electrolytic chamber and a minimal amount of a pH-reducing agent is added to the electrolytic chamber to remove the mineral deposits. In a first embodiment, the pH-reducing agent is admitted on a periodic timed basis. In a second embodiment, the pH-reducing agent is added when the pH of the main body of water falls below a predetermined threshold. In both embodiments, cleaning is accomplished by adding the pH-reducing agent when the circulation pump is not operating so that the acid dwells within the electrolytic chamber for a sufficient amount of time. Activation of the circulation pump causes the pH-reducing agent to enter the main body of water.

Abstract: The pickling process designed for pickling electrical steel strip in a continuous fashion comprising immersing the strip in at least one pickling tub. The pickling tub contains a mixture of HCl, Fe2+, and Fe3+ and a low concentration of HF. Upon exiting the final pickling tub, the strip may be brushed or scrubbed to loosen any residual scale to form a clean strip.

Abstract: The present invention provides a method for cleaning a photo mask without the need for removal of the pellicle mounted on the photo mask, without the large scale equipment for washing with a solution, with a small number of steps for cleaning and inspection, and without the increase of the production cost.

Abstract: Cleaning solutions and cleaning methods targeted to particular substrates and structures in semiconductor fabrication are described. A method of cleaning fragile structures having a dimension less than 0.15 um with a cleaning solution formed of a solvent having a surface tension less than water while applying acoustic energy to the substrate on which the structures are formed is described. Also, a method of cleaning copper with several different cleaning solutions, and in particular an aqueous sulfuric acid and HF cleaning solution, is described. Also, methods of cleaning both sides of a substrate at the same time with different cleaning solutions applied to the top and the bottom are described.

Abstract: A method for decontaminating nuclear plant surfaces, which have been contaminated with alpha emitters, is carried out subsequently to a decontamination process which is aimed at the removal of oxide layers. The surfaces are treated with an aqueous solution which contains a cationic or zwitterionic surfactant and oxalic acid. At least a part of the solution, after having acted on a surface, is conducted across an ion exchanger.

Abstract: Chemical decontamination method of dissolving oxide film adhered to contaminated component including, preparing decontamination solution in which ozone is dissolved and oxidation additive agent, which suppresses corrosion of metal base of the contaminated component, is added, and applying the decontamination solution to the contaminated component, thereby to remove the oxide film by oxidation.

Abstract: In a manufacturing method of a glass substrate for a magnetic disk including a cleaning process of the glass substrate, the cleaning process includes a process of contacting the glass substrate with a cleaning solution containing a compound, such as thioglycolic acid or a thioglycolic acid derivative, having a thiol group as a functional group.

Abstract: Disclosed are a substrate processing apparatus and a substrate processing method to efficiently remove a resist residue of a substrate surface by using sulfuric acid without hydrogen peroxide solution that is not stable in a high temperature, or by using sulfuric acid together with hydrogen peroxide solution that is not stable in a high temperature. The substrate processing apparatus to process a substrate by using a first processing liquid including sulfuric acid and a second processing liquid including water includes a liquid-film forming device to form a liquid film of the first processing liquid maintained at a temperature higher than room temperature on at least one surface of the substrate, and a vapor/mist supply device to supply vapor or mist of the second processing liquid on the surface of the substrate on which the liquid film of the first processing liquid is formed.

Abstract: A film thickness measuring method can carry out measurement of a thickness of an oxide film more simply in a shorter time. The film thickness measuring method includes determining a thickness of an oxide film or thin film of a metal or alloy by solely using a phase difference ?, measured by ellipsometry, based on a predetermined relationship between the phase difference ? and the thickness of the oxide film or thin film of the metal or alloy.

Abstract: The present invention provides an electrically conductive element for a proton exchange membrane fuel cell having low electrical contact resistance and high corrosion resistance. The conductive element comprises a corrosion susceptible metal substrate with a surface, which is preferably treated to activate the surface (i.e. to remove a passivation layer of oxides from the surface) with an acidic treatment solution. The treated surface is then overlaid with an electrically conductive, corrosion-resistant, protective coating to protect the substrate re-forming a passivation layer while exposed to the corrosive environment of the fuel cell. The present invention also provides methods of preparing an electrically conductive element to have low electrical contact resistance and high corrosion resistance.

Abstract: A method of using a film formation apparatus for a semiconductor process includes removing by a cleaning gas a by-product film deposited on an inner surface of a reaction chamber of the film formation apparatus, and then chemically planarizing the inner surface of the reaction chamber by a planarizing gas. The inner surface contains as a main component quartz or silicon carbide. The removing is performed while supplying the cleaning gas into the reaction chamber, and setting the reaction chamber at a first temperature and first pressure to activate the cleaning gas. The planarizing is performed while supplying the planarizing gas into the reaction chamber, and setting the reaction chamber at a second temperature and second pressure to activate the planarizing gas. The planarizing gas contains fluorine gas and hydrogen gas.

Abstract: The invention relates to a method for removing films and deposits from stainless surfaces, especially from stainless metallic surfaces such as they are used in process stations and production units in the pharmaceutical, food and biotechnological industries, and to an aqueous cleaning solution comprising a reducing agent, in particular dithionite and/or disulfite, and at least two different complexing agents, wherein one of these complexing agents is a compound comprising diacetic acid groups or a salt thereof, for removing rouging on surfaces of stainless steels that come into contact with media selected from the group of chromium/nickel and chromium/nickel/molybdenum steels in the neutral pH range.

Abstract: An apparatus and method for removing contaminants from a workpiece is described. Embodiments of the invention describe placing a workpiece on a holding bracket within a process chamber to hold and rotate the workpiece to be cleaned. A first cleaning fluid is provided to the workpiece non-device side, while a degasified liquid is provided to the workpiece device side during megasonic cleaning. The degasified liquid inhibits cavitation from occurring on and damaging the device side of the workpiece during megasonic cleaning.

Abstract: A composition and method comprising same for selectively removing residues such as, for example, ashed photoresist and/or processing residues are disclosed herein. In one aspect, there is provided a composition for removing residue wherein the composition has a pH ranging from about 2 to about 9 comprising: a buffer solution comprising an organic acid and a conjugate base of the organic acid in a molar ratio of acid to base ranging from 10:1 to 1:10; a fluoride, and water, provided that the composition is substantially free of an added organic solvent. In another aspect, the composition may further comprise a corrosion inhibitor.

Abstract: Several embodiments of cleaning systems using polyelectrolyte and various associated methods for cleaning microelectronic substrates are disclosed herein. One embodiment is directed to a system that has a substrate support for holding the microelectronic substrate, a dispenser positioned above the substrate support and facing a surface of the microelectronic substrate, a reservoir in fluid communication with the dispenser via a conduit, and a washing solution contained in the reservoir. The washing solution includes a polyelectrolyte.

Abstract: A manufacturing a thin film transistor array panel includes depositing a first thin film including aluminum on a substrate, patterning the first thin film by photolithography and etching, cleansing the substrate including the first thin film, and depositing a second thin film on the cleansed substrate. The cleansing is performed using a cleansing material including ultrapure water, cyclic amine, pyrogallol, benzotrizole, and methyl glycol. The cleansing material includes ultrapure water at about 85 wt % to about 99 wt %, cyclic amine at about 0.01 wt % to about 1.0 wt %, pyrogallol at about 0.01 wt % to 1.0 wt %, benzotrizole at about 0.01 wt % to 1.0 wt %, and methyl glycol at about 0.01 wt % to 1.0 wt %.

Abstract: An electrode of a secondary battery is treated to remove an electrode material adhering to the current collector of the electrode. The electrode is treated by exposing to a stripping agent, which is constituted as an aqueous solution containing at least one of an organic sulfonic acid and derivative thereof, and the electrode exposure to each other to strip the electrode material from the current collector constituting the electrode.

Abstract: A method of wet cleaning a surface is disclosed. The method of wet cleaning a surface of at least one material chosen from silicon, silicon-germanium alloys, A(III)/B(V)-type semiconductors and epitaxially grown crystalline materials, such as germanium, includes the following successive steps: a) the surface is brought into contact with an HF solution; b) the surface is rinsed with acidified, deionized water, then a powerful oxidizing agent is added to the deionized water and the rinsing is continued; c) optionally, step a) is repeated, once or twice, while optionally reducing the contacting time; d) step b) is optionally repeated, once or twice; and e) the surface is dried.

Abstract: One exemplary embodiment can be a process for removing one or more scale deposits formed on a surface. The process can include contacting the surface with a composition for a period of time sufficient to remove the one or more scale deposits. Generally, the composition includes an effective amount of an organic acid and/or a salt thereof, and an effective amount of an oxidizing agent.

Abstract: A method of cleaning a microwave plasma applicator tube as described herein includes preparing a microwave plasma applicator for cleaning. A general cleaning of the plasma applicator tube is performed using an organic solvent wash and an ultrapure water wash. Selective cleanings of the tube are performed to remove selected contaminants. Such cleanings include a third wash with an alkaline cleaning solution, a fourth wash with an acidic cleaning solution and another wash using an ammonia and peroxide solution. The tube is rinsed using a sonicating wash performed in ultrapure water followed by drying. Also, the coil can be cleaned using acidic wash solution.

Abstract: An abrasive includes abrasive grains, a solvent, and an additive. MnO2, Mn2O3, Mn3O4, MnO or a mixture thereof as the abrasive grains, H2O2 as the solvent, and HNO3, an organic acid, H2O2, etc., as the additive are employed. The abrasive is solidified with cooling, etc. The abrasive and the additive can be supplied to a polishing apparatus through separate routes.

Abstract: A metallic copper and resin composite body manufacturing method of forming a copper wiring layer that forms an inner layer circuit, establishing an insulating layer with a resin on said wiring layer, forming via holes which expose the copper surface under the insulative layer, and depositing a metal on the copper surface that is exposed at the bottom of the via holes. The method includes a step of: removing copper oxide which forms on the surface of the copper that is exposed in the bottom of the via holes using a phosphoric acid aqueous solution with a pH between 1 and 3. The method suppresses haloing is and via holes with excellent solder bonding are formed.

Abstract: A novel cleaning method for preventing defects and particles resulting from post tungsten etch back or tungsten chemical mechanical polish is provided. The cleaning method comprises providing a stack structure of a semiconductor device including a tungsten plug in a dielectric layer. The tungsten plug has a top excess portion. A surface of the stack structure is then contacted with a cleaning solution comprising hydrogen peroxide. Next, the surface of the stack structure is contacted with dilute hydrofluoric acid. The cleaning solution and hydrofluoric acid are capable of removing the top excess portion and particles on the surface of the stack structure.