Abstract: A substrate processing method includes: holding a substrate having a processing target surface and an opposite surface which is opposite to the processing target surface; preheating a center portion of the opposite surface of the substrate; after the preheating, ejecting a sulfuric acid hydrogen peroxide mixture (SPM) to a peripheral edge portion of the processing target surface of the substrate; and after the ejecting, moving an ejection position of the SPM from the peripheral edge portion of the processing target surface to a center portion of the substrate.

Abstract: Smoothness of glass is improved. A polishing slurry (A) contains amorphous carbon and water, and a total amount of the amorphous carbon and the water is equal to or more than 90% of the whole polishing slurry in terms of mass ratio.

Abstract: In a nozzle deposit removing device and a method of nozzle deposit removal, compressed air is supplied to an air supply hole of a negative pressure generating unit from an air supply source, and compressed air is released to outside via an other end of a release hole from the air supply hole, thereby generating a flow of negative pressure directed from a tapered section of a nozzle insertion member toward the release hole via a through-hole. Next, a tip section of the nozzle is inserted into the tapered section of the nozzle insertion member, thereby forming a gap between the tapered section communicating with the through-hole and the tip section of the nozzle.

Abstract: Described herein is a technique capable of acquiring, monitoring and recording the progress of the reaction between a substrate and a reactive gas contained in a process gas in a process chamber during the processing of the substrate. According to the technique, there is provided a substrate processing apparatus including: a process chamber accommodating a substrate; a process gas supply system configured to supply a process gas into the process chamber via a process gas supply pipe; an exhaust pipe configured to exhaust an inner atmosphere of the process chamber; a first gas concentration sensor configured to detect a first concentration of a reactive gas contained in the process gas in the process gas supply pipe; and a second gas concentration sensor configured to detect a second concentration of the reactive gas contained in an exhaust gas in the exhaust pipe.

Abstract: A surface treatment apparatus includes a treatment vessel including a treatment space in which a metal component is disposed, a spray nozzle that supplies mist of a non-chromate conversion treatment liquid to the treatment space, and a circulation device that collects the non-chromate conversion treatment liquid from the treatment space and supplies the non-chromate conversion treatment liquid to the spray nozzle.

Abstract: A phosphoric acid-free etchant composition and a method of forming a wiring, the composition including about 40 wt % to about 60 wt % of an organic acid compound; about 6 wt % to about 12 wt % of a glycol compound; about 1 wt % to about 10 wt % of nitric acid, sulfuric acid, or hydrochloric acid; about 1 wt % to about 10 wt % of a nitrate salt compound; and water, all wt % being based on a total weight of the phosphoric acid-free etchant composition.

Abstract: A method of manufacturing a Schottky barrier diode includes: forming a first well region over a substrate; forming a first dielectric layer over the first well region; patterning the first dielectric layer by reducing a first thickness of the first dielectric layer; removing the first dielectric layer to expose a surface of the first well region; and forming a conductive layer over the first well region to obtain a Schottky barrier interface. A Schottky barrier diode manufactured based on the above method is also provided.

Abstract: There is provided an etching method, including: loading a substrate having a metallic film formed on the substrate into a processing container; and subsequently, oxidizing and etching the metallic film by setting an internal pressure of the processing container to a pressure higher than 2.40×104 Pa and supplying an oxidizing gas for oxidizing the metallic film and an etching gas comprising ?-diketone into the processing container.

Abstract: The etching method of the present invention includes the step of supplying a first mixed gas containing a ?-diketone-containing etching gas and a nitrogen oxide gas to a target having, on a surface, both a first metal film containing cobalt, iron, or manganese and a second metal film containing copper, thereby selectively etching the first metal film over the second metal film, or the step of supplying a second mixed gas containing a ?-diketone-containing etching gas and oxygen gas to the target, thereby selectively etching the second metal film over the first metal film.

Abstract: A method for removing oxide materials from a crack of a metallic workpiece comprises: infiltrating an alkali solution into the crack in a pressurized atmosphere or an ultrasonic environment; applying an energy to the crack to react the oxide materials with the alkali solution and form a resultant material; and rinsing the resultant material with an acid solution to remove the resultant material from the crack. The method is easier to penetrate into the inside of the cracks, in particular suitable for cleaning narrow and deep cracks.

Abstract: Molten salt electrolytes are described for use in electrochemical synthesis of hydrocarbons from carboxylic acids. The molten salt electrolyte can be used to synthesize a wide variety of hydrocarbons with and without functional groups that have a broad range of applications. The molten salt can be used to synthesize saturated hydrocarbons, diols, alkylated aromatic compounds, as well as other types of hydrocarbons. The molten salt electrolyte increases the selectivity, yield, the energy efficiency and Coulombic efficiency of the electrochemical conversion of carboxylic acids to hydrocarbons while reducing the cell potential required to perform the oxidation.

Abstract: Stripping solutions that may replace an etching resist ashing process are provided. The stripping solutions are useful for fabricating circuits and/or forming electrodes and/or packaging/bumping applications on semiconductor devices for semiconductor integrated circuits with good photoresist removal efficiency and with low silicon oxide etch rate and low metal etch rates. Methods for their use are similarly provided. The preferred stripping agents contain polar aprotic solvent, water, hydroxylamine, corrosion inhibitor, quaternary ammonium hydroxide and optional surfactant. Further provided are integrated circuit devices and electronic interconnect structures prepared according to these methods.

Abstract: The present invention relates to a liquid composition soluble in water or other polar substance and its use for vehicle cleansing and care, in particular for all the treatments provided in the washing steps of vehicles. The composition comprises at least one active enzymatic component.

Abstract: Provided are a removal liquid for removing an oxide of a Group III-V element, an oxidation prevention liquid for preventing the oxidation of an oxide of a Group III-V element or a treatment liquid for treating an oxide of a Group III-V element, each liquid including an acid and a mercapto compound; and a method using each of the same liquids. Further provided are a treatment liquid for treating a semiconductor substrate, including an acid and a mercapto compound, and a method for producing a semiconductor substrate product using the same.

Abstract: Embodiments of the present disclosure include a rotational molding device. The rotational molding device comprises a frame, a vessel coupled to the frame and configured to be heated or cooled, and a mold coupled to the frame and configured to rotate about a first axis by a first rotation mechanism and configured to rotate about a second axis by a second rotation mechanism. The vessel includes a particle bed comprising a plurality of fluidized particles, the mold is configured to form a molded part, and the mold includes a cavity corresponding to a shape of the molded part.

Abstract: A method of molding a component includes the steps of providing a plurality of fibers, applying the fibers with a low temperature sizing to form a plurality of sized fibers, forming a preform from the plurality of sized fibers, placing the preform in a mold, and de-sizing the preform by heating the mold to an initial temperature that is sufficient to break down the low temperature sizing to a gaseous phase. A molding apparatus is also disclosed.

Abstract: Provided is an acid-pickling additive for a surface oxide scale of a stainless steel material, a preparation method thereof and an acid-pickling method. The acid-pickling additive consists of 1 to 10 parts by weight of an alcohol amine compound, 0.1 to 5 parts by weight of a metal complex ligand, 0 to 10 parts by weight of a nitrogen-containing organic cyclic compound, 0 to 3 parts by weight of an alcohol compound, 0 to 3 parts by weight of a plant extract, and 1 to 2 parts by weight of water. This acid-pickling additive can solve the problems of high energy consumption, environmental pollution, and high cost in the existing method for removing an oxide scale of a stainless steel.

Abstract: A method of cleaning a cooling water system is disclosed. The method may include contacting a cooling tower fill with a composition that may include a surfactant and an additive selected from an oxidizing agent, an acid, and any combination thereof when the cooling water system is off-line. The method may include contacting a deposit in the cooling tower fill with the composition. The oxidizing agent may be hydrogen peroxide, sodium hypochlorite, chlorine dioxide, ozone, sodium hypobromite, sodium or potassium permanganate, or any combination thereof. The surfactant may include a C8-C10 alkyl polyglycoside and a C10-C18 alkyl polyglycoside.

Abstract: Embodiments of the disclosed technology include patterning a graphene sheet for biosensor and electronic applications using lithographic patterning techniques. More specifically, the present disclosure is directed towards the method of patterning a graphene sheet with a hard mask metal layer. The hard mask metal layer may include an inert metal, which may protect the graphene sheet from being contaminated or damaged during the patterning process.

Abstract: Described herein is an etching solution suitable for both tungsten-containing metals and GST metals, which comprises: water; at least one phenolic derivative compound having at least two hydroxyl groups; at least one strong base selected from the group consisting of (i) a quaternary base; (ii) an organic amine; and (iii) a metal hydroxide; optionally an ammonium salt of an organic acid; and optionally a water-miscible solvent, wherein the pH of the etching solution is 10 or greater, and wherein the etching solution is substantially free of a peroxide oxidizer and a metal ion-containing oxidizer.

Abstract: [Problem] To provide a canvas cleaning device that can prevent re-adhesion of stains as much as possible and also efficiently clean the canvas. [Solution] The canvas cleaning device 100 is provided with a base part 11 capable of sliding along a rail part 1 that extends in a width direction of a canvas K1, a cone part 13 having a cylinder shape, which is attached to the base part 11, and extends straightly, a high pressure water spraying device 13a installed inside the cone part 13, an arm part 15 that is extended and installed on the downstream side from the base part 11 and a nozzle device 16 attached to the tip of the arm part 15, and in this structure, high pressure water is sprayed onto the canvas K1 from the high pressure water spraying device 13a inside the cone part 13.

Abstract: An aqueous cleaning composition, which may be suitable for use in cleaning hard surfaces, is described. The aqueous cleaning composition includes an ionic liquid solvent, an amino alcohol, and a substantial amount of water. The cleaning compositions may also include a disinfecting quaternary surfactant, a nonionic surfactant, such as an ethoxylated alcohol and/or alkyl polyglycoside, and/or a chelating agent, such as an aminopolycarboxylate chelating agent.

Abstract: The present disclosure provides an exhaust system for discharging from semiconductor manufacturing equipment a hazardous gas. The exhaust system includes: a main exhaust pipe having a top surface and a bottom surface; a first branch pipe including an upstream end coupled to a source of a gas mixture containing the hazardous gas and a downstream end connected to the main exhaust pipe through the top surface; a second branch pipe including a downstream end connected to the main exhaust pipe through the bottom surface; and a detector configured to detect presence of the hazardous gas in the second branch pipe.

Abstract: Generally described, the methods disclosed herein for recycling fiber composite source objects, such as wind turbine blades, include converting a whole wind turbine blade to an output material state that is useful for manufacturing other products, such as those used in construction of buildings, packaging, raw materials, and pellets, among other products. The recycling process is performed while tracking the progress and location of each wind turbine blade such that the direct source of the output material may be determined. In some embodiments, the method includes sectioning the wind turbine blades, crushing the wind turbine blade sections, tracking the progress of each blade through the process, and loading output materials into a suitable transportation vessel.

Abstract: Disclosed is a dry etching method for etching a metal film on a substrate with the use of an etching gas, wherein the etching gas contains a ?-diketone and first and second additive gases; wherein the metal film contains a metal element capable of forming a complex with the ?-diketone; wherein the first additive gas is at least one kind of gas selected from the group consisting of NO, NO2, O2 and O3; wherein the second additive gas is at least one kind of gas selected from the group consisting of H2O and H2O2; wherein the amount of the ?-diketone contained is 10 vol % to 90 vol % relative to the etching gas; and wherein the amount of the second additive gas contained is 0.1 vol % to 15 vol % relative to the etching gas. The etching rate of the metal film is increased by this etching method.

Abstract: Disclosed herein are hard surface cleaning compositions comprising, for example, a pH modifying agent in an amount sufficient to provide an alkaline pH; and a foaming system comprising: a nonionic ethoxylated/propoxylated surfactant; and a nonionic ethoxylated surfactant; wherein the concentration of the nonionic ethoxylated surfactant is greater than the concentration of the nonionic ethoxylated/propoxylated surfactant; and wherein the foaming system provides a structured network comprising a matrix having interstitial spaces. Methods of making and using these compositions are also described.

Abstract: A method of processing a plate-shaped workpiece that includes layered bodies containing metal which are formed in superposed relation to projected dicing lines, includes the steps of holding the workpiece on a holding table, and thereafter, cutting the workpiece along the projected dicing lines with an annular cutting blade, thereby separating the layered bodies. The cutting blade has a groove defined in a face side or a reverse side of an outer peripheral portion thereof that cuts into the workpiece in the step of cutting the workpiece. The step of cutting the workpiece includes the step of cutting the workpiece while supplying a cutting fluid containing an organic acid and an oxidizing agent to the workpiece.

Abstract: Embodiments of compositions of a wet etchant and additive thereto for selectively etching silicon nitride to silicon oxide are disclosed. In an example, a composition of an additive to a phosphoric acid etchant includes an inhibitor and a dispersant. The inhibitor is absorbable on a surface of silicon oxide and capable of inhibiting etching of the surface of silicon oxide by the phosphoric acid etchant. The dispersant is capable of reacting with a by-product of a reaction between the phosphoric acid etchant and at least one of silicon oxide and silicon nitride and reducing a viscosity of the phosphoric acid etchant.

Abstract: A method includes forming a first dielectric layer over a wafer, etching the first dielectric layer to form an opening, filling a tungsten-containing material into the opening, and performing a Chemical Mechanical Polish (CMP) on the wafer. After the CMP, a cleaning is performed on the wafer using a weak base solution.

Abstract: A method for preparing a product for treating the skin and mucous membranes comprises the steps of making available a suitable quantity of trichloroacetic acid, making available a suitable quantity of hydrogen peroxide, making a first mixture of the trichloroacetic acid and the hydrogen peroxide, making available a determinate quantity of the basic compound able to achieve a buffer effect of the trichloroacetic acid comprised in the first mixture, and adding the basic compound.

Abstract: According to one embodiment, an etching apparatus for etching a semiconductor with an aid of a noble metal catalyst, includes a reaction vessel configured to accommodate a semiconductor substrate provided with a catalyst layer including a noble metal, and a feeder configured to feed, to the reaction vessel, an oxidizer, hydrogen fluoride, an organic additive, and carbon dioxide in a supercritical or subcritical state.

Abstract: An alkaline wet solution for protecting features on a patterned substrate and a substrate processing method using the alkaline wet solution are described. The method includes providing a patterned substrate containing a low-k material, a metal oxide feature, and an etch residue, performing a treatment process that exposes the patterned substrate to an alkaline wet solution that forms a protective coating on the metal oxide feature, the alkaline wet solution containing a mixture of 1) water, 2) ammonium hydroxide, a quaternary organic ammonium hydroxide, or a quaternary organic phosphonium hydroxide, and 3) dissolved silica, and performing a wet cleaning process that removes the etch residue but not the metal oxide feature that is protected by the protective coating. The patterned substrate can further include a metallization layer and the alkaline wet solution can further contain 4) an inhibitor that protects the metallization layer from etching by the alkaline wet solution.

Abstract: A composition for cleaning a magnetic pattern, a method of manufacturing a magnetic memory device, a method of forming a magnetic pattern, and a magnetic memory device, the composition including a glycol ether-based organic solvent; a decomposing agent that includes an aliphatic amine; and at least one of a chelating agent, or a cleaning accelerator that includes an organic alkaline compound, wherein the composition is devoid of water.

Abstract: A method is presented for post chemical mechanical polishing (PCMP) clean for cleaning a chemically-mechanically polished semiconductor wafer. The method includes planarizing the semiconductor wafer, subjecting the semiconductor wafer to a de-oxygenated mixture of DI water and PCMP solution, and applying a de-oxygenated environment during the cleaning. The solution can be de-oxygenated by nitrogen degas or by introducing a reducing agent. The environment can be de-oxygenated by purging with an inert gas, such as nitrogen.

Abstract: A high foaming liquid alkaline cleaner comprises one or more alkalinity sources; one or more surfactants comprising a hydrotrope, one or more wetting and soil emulsifying surfactants, one or more foam volume generating surfactants, and one or more foam boosting surfactants and one or more sequestrants. Optionally, an organic solvent can be utilized. The high foaming liquid alkaline cleaning composition is generally prepared in a concentrated form and can be diluted as with water. The alkaline cleaner provides effective cleaning properties, with respect to fats, oils, and organic soils.

Abstract: Disclosed are compositions comprising at least one bicarbonate compound, at least one acid, at least one film forming polymer, and at least one cosmetically acceptable carrier, wherein the weight ratio of the at least one bicarbonate compound to the at least one acid is greater than or equal to about 1:1, and methods of altering the shape of keratin fibers comprising contacting the fibers with the compositions.

Abstract: A detergent composition in the form of an effervescent tablet having high dissolution rate and good stability, which is suitable for producing aqueous solutions of cleaning compositions for cleaning hard surfaces and clothes. The tablet includes an alkylsulfate-type anionic surfactant, an effervescent system, a combination of at least two disintegrating agents, and urea.

Abstract: Solvents useful for removing, among other things, photoresists and poly(amic acid)/polyimide from display/semiconductor substrates or electronic processing equipment, consist essentially of: (A) a first component consisting of a sulfoxide, e.g., DMSO; (B) a second component consisting of a glycol ether, e.g., ethylene glycol monobutyl ether; and (C) a third component consisting of at least one of N-formyl morpholine, N,N-dimethyl propionamide, 3-methoxy-N,N-dimethyl propanamide, triethyl phosphate, N,N-dimethyl acetamide; N,N-diethyl acetamide, N,N-diethyl propionamide, N-methyl acetamide, N-methyl propionamide, N-ethyl acetamide, and N-ethyl propionamide.

Abstract: Disclosed is a supercritical-state cleaning system, comprising a cleaning chamber, a gas booster apparatus, a first heating apparatus, and a carbon dioxide supply apparatus. The cleaning chamber is separately connected to the first heating apparatus and the carbon dioxide supply apparatus. A vacuum pump set is connected to the cleaning chamber. Compared with the prior art, in the Invention, air introduced when a workpiece enters a cleaning chamber is completely removed, so as to prevent mixing of CO2 and air, thereby improving a cleaning effect.

Abstract: A method for processing a semiconductor wafer in a PECVD deposition chamber with a circular pedestal and a recessed portion formed around the outer top surface of the pedestal. The method may include using a circular wafer carrier ring with a recessed portion.

Abstract: A method of polishing a semiconductor wafer includes polishing a surface of the semiconductor wafer using a polishing pad while supplying a polishing agent slurry containing abrasives during a first step. The polishing pad is free of abrasives and includes a first surface that contacts the semiconductor wafer, the first surface having a surface structure including elevations. Supply of polishing agent slurry is subsequently ended and, in a second step, the surface of the semiconductor wafer is polished using the polishing pad while supplying a polishing agent solution having a pH value of at least 12 that is free of solids.

Abstract: Disclosed are methods for developing authorized chemical palettes for formulating products with reduced adverse environmental and/or health concerns, and advising the public to a greater extent regarding the ingredients of products formulated using these palettes. Also disclosed are computer systems to implement such methods.

Abstract: A method for cleaning a semiconductor wafer by using a chemical tank containing an SC-2 solution including, a plurality of the chemical tanks are used, and among SC-2 solutions contained in the plurality of chemical tanks, an HCl concentration in an SC-2 solution contained in a chemical tank to be finally used is lowered to the lowest to clean the semiconductor wafer. The method for cleaning a semiconductor wafer thus provided can improve the particle level in SC-2 cleaning for a semiconductor wafer without degrading the metal impurity level on the semiconductor wafer surface.

Abstract: A method for inspecting a rotary machine having a fluid flow path includes a step of connecting an observation device to a connection port having an open/close valve that opens/closes a communication hole that communicates with the outside of the rotary machine and the flow path, the main body being connected to the connection port where the open/close valve is closed; a step of opening the open/close valve and inserting an insertion rod protruding from the main body of the observation device into the communication hole; a step of observing the inside of the flow path by an observation optical system provided at a leading end portion of the insertion rod; a step of withdrawing the insertion rod from the communication hole and closing the open/close valve; and a step of detaching the main body of the observation device from the connection port.

Abstract: Described herein are various antimicrobial glass articles that have improved resistance to discoloration when exposed to harsh conditions. The improved antimicrobial glass articles described herein generally include a glass substrate that has a low concentration of nonbridging oxygen atoms, a compressive stress layer and an antimicrobial silver-containing region that each extend inward from a surface of the glass substrate to a specific depth, such that the glass article experiences little-to-no discoloration when exposed to harsh conditions. Methods of making and using the glass articles are also described.

Abstract: There is provided a cleaning method of a film forming apparatus in which a process of forming a silicon film, a germanium film or a silicon germanium film on a substrate mounted on a substrate holder in a processing container is performed, comprising: etching away the silicon film, the germanium film or the silicon germanium film adhered to an interior of the processing container including the substrate holder by supplying a halogen-containing gas not containing fluorine into the processing container in a state where the substrate holder, which was stored in a dew point-controlled atmosphere after the film forming process, is accommodated in the processing container with no substrate being mounted thereon.

Abstract: A lubricant for firearms includes a base and nanoparticles dispersed throughout the base. The base may include a hydrocarbon or a mixture of hydrocarbons. The base may be in a liquid form or in a semisolid form. Fat from an animal source, such as porcine fat or, more specifically, bacon fat, may be employed as a hydrocarbon of the base. Fat from an animal source may be rendered or otherwise clarified. The nanoparticles may include nanospheres, which may have an average diameter of about 100 nm or less. The lubricant may also include a hydrocarbon from a vegetable source (e.g., a vegetable oil, etc.), a hydrocarbon from a petrochemical source, and/or a synthetic petrochemical lubricant. The lubricant may include a fragrance to impart it with a desired scent (e.g., a bacon scent, etc.). Methods for lubricating and cleaning metallic surfaces of firearms are also disclosed. In such a method, nanoparticles from a lubricant may be introduced into and retained within microscopic crevices in the metallic surfaces.

Abstract: The cleaning apparatus includes multiple kinds of cleaning modules each configured to perform a cleaning processing of a substrate, a first accommodating section configured to accommodate the multiple kinds of cleaning modules therein, and a fluid supply section configured to supply a fluid to the cleaning modules accommodated in the first accommodating section through a pipe. Each of the multiple kinds of cleaning modules includes a pipe connection portion having a common connection position to be connected with the pipe.

Abstract: A method is for cleaning a substrate transfer mechanism for loading a substrate into a heat treatment chamber for sublimating by-products by heat. The substrate transfer mechanism includes a holding unit for holding the substrate. The method includes repeatedly moving the holding unit into and out of the heat treatment chamber.

Abstract: Disclosed is a supercritical-state cleaning system, comprising a cleaning chamber (4), a gas booster apparatus (11), a first heating apparatus (5), and a carbon dioxide supply apparatus. The cleaning chamber (4) is separately connected to the first heating apparatus (5) and the carbon dioxide supply apparatus. A vacuum pump set (1) is connected to the cleaning chamber (4). Compared with the prior art, in the Invention, air introduced when a workpiece enters a cleaning chamber is completely removed, so as to prevent mixing of CO2 and air, thereby improving a cleaning effect.