Abstract: The invention relates to compositions, methods of manufacture, and methods for reducing metal corrosion during alkaline cleaning. In particular, the method employs a hydroxyphosphono carboxylic acid in alkaline cleaning of hard surfaces.

Abstract: A method of removing surface carbon contamination from polycrystalline silicon comprises providing a polycrystalline silicon feed stream having surface carbon contamination, subjecting the polycrystalline silicon to a high velocity fluid selected from gas, gas/liquid mixtures, gas/solid mixtures and gas/solid/liquid mixtures to form a product stream comprising polycrystalline silicon having surface carbon in an amount of less than 200 parts per billion by weight based on weight of the polycrystalline silicon product and/or a reduction in surface carbon contamination of at least 20%. A system for conducting the method comprises an enclosure, a conveyer for moving a polycrystalline silicon feed stream through the enclosure, at least one stream of a high velocity fluid passing through outlets in the enclosure and directed at the feed stream, an ionizing source in the enclosure or integrated with the at least one stream of high velocity fluid, and an exhaust system for the enclosure.

Abstract: A processing liquid nozzle includes: an ultrasonic wave generator including a oscillator that generates ultrasonic waves and a oscillating body that is joined to the oscillator; a first supply flow path configured to supply a first liquid to a position in contact with the oscillating body of the ultrasonic wave generator; an ejection flow path configured to supply the first liquid to which the ultrasonic waves are applied by the ultrasonic wave generator to an ejection port; and a second supply flow path connected to the ejection flow path on a downstream side from the ultrasonic wave generator and configured to supply a second liquid to the ejection flow path.

Abstract: A chemical liquid preparation method of preparing a chemical liquid for treating a film formed on a substrate, including a gas dissolving process in which an oxygen-containing gas and an inert-gas-containing gas are dissolved in the chemical liquid by supplying the oxygen-containing gas which contains oxygen gas and the inert-gas-containing gas which contains an inert gas to a chemical liquid, wherein in the gas dissolving process, a dissolved oxygen concentration in the chemical liquid is adjusted by setting a mixing ratio between the oxygen-containing gas and the inert-gas-containing gas supplied to the chemical liquid as a mixing ratio corresponding to a predetermined target dissolved oxygen concentration.

Abstract: A process treats production water resulting from enhanced oil recovery, the production water comprising an aqueous phase and an organic phase dispersed in the aqueous phase, and at least one polymer in the aqueous phase. The process includes: a step of bringing said production water into contact with an additive comprising at least one tetrakis(hydroxymethyl)phosphonium salt (THMP salt), a step of separating the aqueous phase and the organic phase of said production water comprising said additive, by means of a hydrocyclone. An enhanced recovery process uses a step of treating the production water according to the invention.

Abstract: Methods and apparatus for selectively depositing a layer atop a substrate having a metal surface and a dielectric surface is disclosed, including: (a) contacting the metal surface with one or more metal halides such as metal chlorides or metal fluorides to form an exposed metal surface; (b) growing an organosilane based self-assembled monolayer atop the dielectric surface; and (c) selectively depositing a layer atop the exposed metal surface of the substrate, wherein the organosilane based self-assembled monolayer inhibits deposition of the layer atop the dielectric surface.

Abstract: A method for reducing adhesion between a maskant and a substrate, wherein the maskant is adhered to a surface of the substrate, the method comprising applying a composition to the maskant.

Abstract: In chemical processes for cracking hydrocarbons, reactors are subject to coking. This results in carburization of the metal substrate for the reactor leading to a reduced reactor life. If the reactor is subject to a decoke process, followed by a steam scour and nitrogenating there is a reduced tendency to carburization of the metal substrate improving the reactor life.

Abstract: A substrate processing apparatus includes a support unit; a first nozzle for discharging a first rinse solution to a first area of the substrate; and a second nozzle for discharging a second rinse solution to a second area of the substrate, wherein the first nozzle discharges the first rinse solution to a first area during a first period so that the first area and the second area of the substrate are wetted by the first rinse solution, and some area of the substrate is not wetted by the first rinse solution, wherein the first nozzle discharges the first rinse solution to the first area and the second nozzle discharges the second rinse solution to the second area in a second period directly connected to the first period so that an entire upper surface of the substrate is wetted by the first rinse solution and the second rinse solution.

Abstract: A coated glass article and of a system and method for forming a coated glass article are provided. The process includes applying a first coating precursor material to the first surface of the glass article and supporting the glass article via a gas bearing. The process includes heating the glass article and the coating precursor material to above a glass transition temperature of the glass article while the glass article is supported by the gas bearing such that during heating, a property of the first coating precursor material changes forming a coating layer on the first surface of the glass article from the first precursor material. The high temperature and/or non-contact coating formation may form a coating layer with one or more new physical properties, such as a deep diffusion layer within the glass, and may form highly consistent coatings on multiple sides of the glass.

Abstract: Methods for reducing scale deposition are provided. An exemplary method for reducing scale in an oilfield facility includes contacting a metallic surface with a production fluid including a film-forming surfactant selected from imidazolines, imidazolidines, amidoamines, isoxazolidines, fatty amines, ?,?-unsaturated aldehydes, salts thereof, and combinations thereof, the production fluid including the film-forming surfactant in a concentration of at least about 200 ppm.

Abstract: A method of recycling glass fiber-reinforced polymer composite materials that can provide improved quality recycled glass fiber is described. More particularly, the method comprises pyrolysis of glass fiber-reinforced polymer composite scrap and/or end-of-life material and the subsequent immersion of the pyrolyzed glass fibers in a molten salt bath, e.g., comprising molten potassium nitrate. Immersion in the molten salt bath can eliminate char from the pyrolyzed fibers, as well as removing residual inorganic materials. In addition, immersion in the molten salt bath can strengthen the glass fiber, which can result in the recovery or avoidance of tensile strength losses normally incurred through traditional char removal processes.

Abstract: In one inventive concept, a method for etching an optic includes obtaining a microemulsion, where the microemulsion includes a continuous oil phase, a surfactant system comprising at least one surfactant, and water, submerging at least a portion of the optic in the microemulsion, and agitating by ultrasonication the microemulsion for etching the optic submerged therein.

Abstract: Systems and methods are described for integrated decomposition and scanning of a semiconducting wafer, where a single chamber is utilized for decomposition and scanning of the wafer of interest.

Abstract: An autoclave system comprises an autoclave vessel 210, for performing a leaching operation on sacrificial ceramic cores (not shown) and a storage vessel 220 for containing caustic leaching fluid 230. Interposed in a fluid flow path between the vessel 210 and the tank 220 is a heat exchange unit 240, comprising a body 250 containing a thermal exchange medium, in the form of water 260, and first and second thermal exchange conduits represented at 270 and 280. A thermal exchange medium inlet pipe 290a and a thermal exchange medium outlet pipe 290b are provided to the body so that the medium 260 can be replenished, preferably substantially continuously, to optimize thermal transfer efficiency.

Abstract: In the disclosed solution sand to be cleaned is thermally cleaned by rotating the sand being cleaned in a large oven (1) by rotating the oven (1). Before cleaning, the sand may be pre-processed by crushing any lumps and cleaning the sand fraction by magnetic separation. Preprocessed sand to be cleaned and heat energy are fed (5) into the rotating oven. The oven (1) is set slightly inclined so that a second end of the oven (1) is lower than a first end. The inclination and rotating speed of the oven (1) as well as the feed amount of sand are adjusted, whereby the advancing speed of the sand may be adjusted, as well as the ratio of the sand being cleaned to the volume of the oven (1) kept as desired. The temperature of the oven (1) is monitored at the coldest area of the oven, which is substantially at the second end of the oven. The temperature of the oven (1) is adjusted by adjusting the amount of heat energy fed in.

Abstract: A method for removing particles from a semiconductor wafer surface is disclosed. A wafer is being spun on a spin coater contained within a condensing environment. Liquid vapor is then infused into the condensing environment to allow some of the liquid vapor to be condensed onto a surface of the wafer on which particles may adhere while the wafer is being spun. Next, a set of light pulses is applied to the surface of the spinning wafer. Finally, an electric grid is utilized to remove the particles off the surface of the wafer.

Abstract: A substrate processing method includes: holding a substrate having a processing target surface and an opposite surface which is opposite to the processing target surface; preheating a center portion of the opposite surface of the substrate; after the preheating, ejecting a sulfuric acid hydrogen peroxide mixture (SPM) to a peripheral edge portion of the processing target surface of the substrate; and after the ejecting, moving an ejection position of the SPM from the peripheral edge portion of the processing target surface to a center portion of the substrate.

Abstract: Smoothness of glass is improved. A polishing slurry (A) contains amorphous carbon and water, and a total amount of the amorphous carbon and the water is equal to or more than 90% of the whole polishing slurry in terms of mass ratio.

Abstract: In a nozzle deposit removing device and a method of nozzle deposit removal, compressed air is supplied to an air supply hole of a negative pressure generating unit from an air supply source, and compressed air is released to outside via an other end of a release hole from the air supply hole, thereby generating a flow of negative pressure directed from a tapered section of a nozzle insertion member toward the release hole via a through-hole. Next, a tip section of the nozzle is inserted into the tapered section of the nozzle insertion member, thereby forming a gap between the tapered section communicating with the through-hole and the tip section of the nozzle.

Abstract: Described herein is a technique capable of acquiring, monitoring and recording the progress of the reaction between a substrate and a reactive gas contained in a process gas in a process chamber during the processing of the substrate. According to the technique, there is provided a substrate processing apparatus including: a process chamber accommodating a substrate; a process gas supply system configured to supply a process gas into the process chamber via a process gas supply pipe; an exhaust pipe configured to exhaust an inner atmosphere of the process chamber; a first gas concentration sensor configured to detect a first concentration of a reactive gas contained in the process gas in the process gas supply pipe; and a second gas concentration sensor configured to detect a second concentration of the reactive gas contained in an exhaust gas in the exhaust pipe.

Abstract: A surface treatment apparatus includes a treatment vessel including a treatment space in which a metal component is disposed, a spray nozzle that supplies mist of a non-chromate conversion treatment liquid to the treatment space, and a circulation device that collects the non-chromate conversion treatment liquid from the treatment space and supplies the non-chromate conversion treatment liquid to the spray nozzle.

Abstract: A phosphoric acid-free etchant composition and a method of forming a wiring, the composition including about 40 wt % to about 60 wt % of an organic acid compound; about 6 wt % to about 12 wt % of a glycol compound; about 1 wt % to about 10 wt % of nitric acid, sulfuric acid, or hydrochloric acid; about 1 wt % to about 10 wt % of a nitrate salt compound; and water, all wt % being based on a total weight of the phosphoric acid-free etchant composition.

Abstract: A method of manufacturing a Schottky barrier diode includes: forming a first well region over a substrate; forming a first dielectric layer over the first well region; patterning the first dielectric layer by reducing a first thickness of the first dielectric layer; removing the first dielectric layer to expose a surface of the first well region; and forming a conductive layer over the first well region to obtain a Schottky barrier interface. A Schottky barrier diode manufactured based on the above method is also provided.

Abstract: There is provided an etching method, including: loading a substrate having a metallic film formed on the substrate into a processing container; and subsequently, oxidizing and etching the metallic film by setting an internal pressure of the processing container to a pressure higher than 2.40×104 Pa and supplying an oxidizing gas for oxidizing the metallic film and an etching gas comprising ?-diketone into the processing container.

Abstract: The etching method of the present invention includes the step of supplying a first mixed gas containing a ?-diketone-containing etching gas and a nitrogen oxide gas to a target having, on a surface, both a first metal film containing cobalt, iron, or manganese and a second metal film containing copper, thereby selectively etching the first metal film over the second metal film, or the step of supplying a second mixed gas containing a ?-diketone-containing etching gas and oxygen gas to the target, thereby selectively etching the second metal film over the first metal film.

Abstract: A method for removing oxide materials from a crack of a metallic workpiece comprises: infiltrating an alkali solution into the crack in a pressurized atmosphere or an ultrasonic environment; applying an energy to the crack to react the oxide materials with the alkali solution and form a resultant material; and rinsing the resultant material with an acid solution to remove the resultant material from the crack. The method is easier to penetrate into the inside of the cracks, in particular suitable for cleaning narrow and deep cracks.

Abstract: Molten salt electrolytes are described for use in electrochemical synthesis of hydrocarbons from carboxylic acids. The molten salt electrolyte can be used to synthesize a wide variety of hydrocarbons with and without functional groups that have a broad range of applications. The molten salt can be used to synthesize saturated hydrocarbons, diols, alkylated aromatic compounds, as well as other types of hydrocarbons. The molten salt electrolyte increases the selectivity, yield, the energy efficiency and Coulombic efficiency of the electrochemical conversion of carboxylic acids to hydrocarbons while reducing the cell potential required to perform the oxidation.

Abstract: Stripping solutions that may replace an etching resist ashing process are provided. The stripping solutions are useful for fabricating circuits and/or forming electrodes and/or packaging/bumping applications on semiconductor devices for semiconductor integrated circuits with good photoresist removal efficiency and with low silicon oxide etch rate and low metal etch rates. Methods for their use are similarly provided. The preferred stripping agents contain polar aprotic solvent, water, hydroxylamine, corrosion inhibitor, quaternary ammonium hydroxide and optional surfactant. Further provided are integrated circuit devices and electronic interconnect structures prepared according to these methods.

Abstract: The present invention relates to a liquid composition soluble in water or other polar substance and its use for vehicle cleansing and care, in particular for all the treatments provided in the washing steps of vehicles. The composition comprises at least one active enzymatic component.

Abstract: Provided are a removal liquid for removing an oxide of a Group III-V element, an oxidation prevention liquid for preventing the oxidation of an oxide of a Group III-V element or a treatment liquid for treating an oxide of a Group III-V element, each liquid including an acid and a mercapto compound; and a method using each of the same liquids. Further provided are a treatment liquid for treating a semiconductor substrate, including an acid and a mercapto compound, and a method for producing a semiconductor substrate product using the same.

Abstract: Embodiments of the present disclosure include a rotational molding device. The rotational molding device comprises a frame, a vessel coupled to the frame and configured to be heated or cooled, and a mold coupled to the frame and configured to rotate about a first axis by a first rotation mechanism and configured to rotate about a second axis by a second rotation mechanism. The vessel includes a particle bed comprising a plurality of fluidized particles, the mold is configured to form a molded part, and the mold includes a cavity corresponding to a shape of the molded part.

Abstract: A method of molding a component includes the steps of providing a plurality of fibers, applying the fibers with a low temperature sizing to form a plurality of sized fibers, forming a preform from the plurality of sized fibers, placing the preform in a mold, and de-sizing the preform by heating the mold to an initial temperature that is sufficient to break down the low temperature sizing to a gaseous phase. A molding apparatus is also disclosed.

Abstract: Provided is an acid-pickling additive for a surface oxide scale of a stainless steel material, a preparation method thereof and an acid-pickling method. The acid-pickling additive consists of 1 to 10 parts by weight of an alcohol amine compound, 0.1 to 5 parts by weight of a metal complex ligand, 0 to 10 parts by weight of a nitrogen-containing organic cyclic compound, 0 to 3 parts by weight of an alcohol compound, 0 to 3 parts by weight of a plant extract, and 1 to 2 parts by weight of water. This acid-pickling additive can solve the problems of high energy consumption, environmental pollution, and high cost in the existing method for removing an oxide scale of a stainless steel.

Abstract: A method of cleaning a cooling water system is disclosed. The method may include contacting a cooling tower fill with a composition that may include a surfactant and an additive selected from an oxidizing agent, an acid, and any combination thereof when the cooling water system is off-line. The method may include contacting a deposit in the cooling tower fill with the composition. The oxidizing agent may be hydrogen peroxide, sodium hypochlorite, chlorine dioxide, ozone, sodium hypobromite, sodium or potassium permanganate, or any combination thereof. The surfactant may include a C8-C10 alkyl polyglycoside and a C10-C18 alkyl polyglycoside.

Abstract: Embodiments of the disclosed technology include patterning a graphene sheet for biosensor and electronic applications using lithographic patterning techniques. More specifically, the present disclosure is directed towards the method of patterning a graphene sheet with a hard mask metal layer. The hard mask metal layer may include an inert metal, which may protect the graphene sheet from being contaminated or damaged during the patterning process.

Abstract: Described herein is an etching solution suitable for both tungsten-containing metals and GST metals, which comprises: water; at least one phenolic derivative compound having at least two hydroxyl groups; at least one strong base selected from the group consisting of (i) a quaternary base; (ii) an organic amine; and (iii) a metal hydroxide; optionally an ammonium salt of an organic acid; and optionally a water-miscible solvent, wherein the pH of the etching solution is 10 or greater, and wherein the etching solution is substantially free of a peroxide oxidizer and a metal ion-containing oxidizer.

Abstract: [Problem] To provide a canvas cleaning device that can prevent re-adhesion of stains as much as possible and also efficiently clean the canvas. [Solution] The canvas cleaning device 100 is provided with a base part 11 capable of sliding along a rail part 1 that extends in a width direction of a canvas K1, a cone part 13 having a cylinder shape, which is attached to the base part 11, and extends straightly, a high pressure water spraying device 13a installed inside the cone part 13, an arm part 15 that is extended and installed on the downstream side from the base part 11 and a nozzle device 16 attached to the tip of the arm part 15, and in this structure, high pressure water is sprayed onto the canvas K1 from the high pressure water spraying device 13a inside the cone part 13.

Abstract: An aqueous cleaning composition, which may be suitable for use in cleaning hard surfaces, is described. The aqueous cleaning composition includes an ionic liquid solvent, an amino alcohol, and a substantial amount of water. The cleaning compositions may also include a disinfecting quaternary surfactant, a nonionic surfactant, such as an ethoxylated alcohol and/or alkyl polyglycoside, and/or a chelating agent, such as an aminopolycarboxylate chelating agent.

Abstract: The present disclosure provides an exhaust system for discharging from semiconductor manufacturing equipment a hazardous gas. The exhaust system includes: a main exhaust pipe having a top surface and a bottom surface; a first branch pipe including an upstream end coupled to a source of a gas mixture containing the hazardous gas and a downstream end connected to the main exhaust pipe through the top surface; a second branch pipe including a downstream end connected to the main exhaust pipe through the bottom surface; and a detector configured to detect presence of the hazardous gas in the second branch pipe.

Abstract: Generally described, the methods disclosed herein for recycling fiber composite source objects, such as wind turbine blades, include converting a whole wind turbine blade to an output material state that is useful for manufacturing other products, such as those used in construction of buildings, packaging, raw materials, and pellets, among other products. The recycling process is performed while tracking the progress and location of each wind turbine blade such that the direct source of the output material may be determined. In some embodiments, the method includes sectioning the wind turbine blades, crushing the wind turbine blade sections, tracking the progress of each blade through the process, and loading output materials into a suitable transportation vessel.

Abstract: Disclosed is a dry etching method for etching a metal film on a substrate with the use of an etching gas, wherein the etching gas contains a ?-diketone and first and second additive gases; wherein the metal film contains a metal element capable of forming a complex with the ?-diketone; wherein the first additive gas is at least one kind of gas selected from the group consisting of NO, NO2, O2 and O3; wherein the second additive gas is at least one kind of gas selected from the group consisting of H2O and H2O2; wherein the amount of the ?-diketone contained is 10 vol % to 90 vol % relative to the etching gas; and wherein the amount of the second additive gas contained is 0.1 vol % to 15 vol % relative to the etching gas. The etching rate of the metal film is increased by this etching method.

Abstract: Disclosed herein are hard surface cleaning compositions comprising, for example, a pH modifying agent in an amount sufficient to provide an alkaline pH; and a foaming system comprising: a nonionic ethoxylated/propoxylated surfactant; and a nonionic ethoxylated surfactant; wherein the concentration of the nonionic ethoxylated surfactant is greater than the concentration of the nonionic ethoxylated/propoxylated surfactant; and wherein the foaming system provides a structured network comprising a matrix having interstitial spaces. Methods of making and using these compositions are also described.

Abstract: A method of processing a plate-shaped workpiece that includes layered bodies containing metal which are formed in superposed relation to projected dicing lines, includes the steps of holding the workpiece on a holding table, and thereafter, cutting the workpiece along the projected dicing lines with an annular cutting blade, thereby separating the layered bodies. The cutting blade has a groove defined in a face side or a reverse side of an outer peripheral portion thereof that cuts into the workpiece in the step of cutting the workpiece. The step of cutting the workpiece includes the step of cutting the workpiece while supplying a cutting fluid containing an organic acid and an oxidizing agent to the workpiece.

Abstract: Embodiments of compositions of a wet etchant and additive thereto for selectively etching silicon nitride to silicon oxide are disclosed. In an example, a composition of an additive to a phosphoric acid etchant includes an inhibitor and a dispersant. The inhibitor is absorbable on a surface of silicon oxide and capable of inhibiting etching of the surface of silicon oxide by the phosphoric acid etchant. The dispersant is capable of reacting with a by-product of a reaction between the phosphoric acid etchant and at least one of silicon oxide and silicon nitride and reducing a viscosity of the phosphoric acid etchant.

Abstract: A method includes forming a first dielectric layer over a wafer, etching the first dielectric layer to form an opening, filling a tungsten-containing material into the opening, and performing a Chemical Mechanical Polish (CMP) on the wafer. After the CMP, a cleaning is performed on the wafer using a weak base solution.

Abstract: A method for preparing a product for treating the skin and mucous membranes comprises the steps of making available a suitable quantity of trichloroacetic acid, making available a suitable quantity of hydrogen peroxide, making a first mixture of the trichloroacetic acid and the hydrogen peroxide, making available a determinate quantity of the basic compound able to achieve a buffer effect of the trichloroacetic acid comprised in the first mixture, and adding the basic compound.

Abstract: According to one embodiment, an etching apparatus for etching a semiconductor with an aid of a noble metal catalyst, includes a reaction vessel configured to accommodate a semiconductor substrate provided with a catalyst layer including a noble metal, and a feeder configured to feed, to the reaction vessel, an oxidizer, hydrogen fluoride, an organic additive, and carbon dioxide in a supercritical or subcritical state.

Abstract: An alkaline wet solution for protecting features on a patterned substrate and a substrate processing method using the alkaline wet solution are described. The method includes providing a patterned substrate containing a low-k material, a metal oxide feature, and an etch residue, performing a treatment process that exposes the patterned substrate to an alkaline wet solution that forms a protective coating on the metal oxide feature, the alkaline wet solution containing a mixture of 1) water, 2) ammonium hydroxide, a quaternary organic ammonium hydroxide, or a quaternary organic phosphonium hydroxide, and 3) dissolved silica, and performing a wet cleaning process that removes the etch residue but not the metal oxide feature that is protected by the protective coating. The patterned substrate can further include a metallization layer and the alkaline wet solution can further contain 4) an inhibitor that protects the metallization layer from etching by the alkaline wet solution.

Abstract: A method is presented for post chemical mechanical polishing (PCMP) clean for cleaning a chemically-mechanically polished semiconductor wafer. The method includes planarizing the semiconductor wafer, subjecting the semiconductor wafer to a de-oxygenated mixture of DI water and PCMP solution, and applying a de-oxygenated environment during the cleaning. The solution can be de-oxygenated by nitrogen degas or by introducing a reducing agent. The environment can be de-oxygenated by purging with an inert gas, such as nitrogen.