Abstract: A wet processing apparatus and method that takes advantage of a fluid meniscus to process at least a portion of a surface of an object. After one surface of the object has been processed another side or surface of the object can be similarly processed. This processing can be coating, etching, plating, to name a few. An application of the apparatus and method is in the semiconductor processing industry, especially, the processing of wafers and substrates. The method and apparatus also allows the processing of multiple surfaces of an electronic component.

Abstract: Disclosed is a liquid processing apparatus including first and second cups installed so as to surround a rotation holding unit of a substrate and guide a processing liquid scattered from the rotating substrate downwards. A first driving unit and a second driving unit elevate the first cup and the second cup between a position receiving the processing liquid and the lower position thereof. A controller controls that the first cup and the second cup are ascended at the same time by transferring the driving force of the first driving unit while the first cup or a first elevating member thereof is overlapped with the second cup or a second elevating member thereof from the lower side by setting the ascending speed of the first cup to be higher than the ascending speed of the second cup when the first and second cups are ascended at the same time.

Abstract: A surface cleaning apparatus comprising a chamber, and a thermal transfer device. The chamber is capable of holding a semiconductor structure therein. The thermal transfer device is connected to the chamber. The thermal transfer device has a surface disposed inside the chamber for contacting the semiconducting structure and controlling a temperature of the semiconductor structure in contact with the surface. The thermal transfer device has a thermal control module connected to the surface for heating and cooling the surface to thermally cycle the surface. The thermal control module effects a substantially immediate thermal response of the surface when thermally recycling the surface.

Abstract: An exemplary cleaning apparatus includes a cleaning member, a connecting member, a drying member, and a workpiece holder. The connecting member includes a main housing defining two opposite surfaces and two blocks received in the main housing. The main housing defines a first chamber and two second chambers communicating with the first chamber, each of the second chambers extending through to one of the two opposite surfaces and near to the other opposite surface. The cleaning member and the drying member are connected to the two opposite surfaces and communicate with each other via the first chamber. The two blocks are movable between the first chamber the second chambers, respectively. Each block defines an engaging surface, facing the other engaging surface. When the blocks move into the first chamber and the engaging surfaces engage with each other, the blocks shut off communication between the cleaning member and the drying member.

Abstract: A bevel/backside polymer removing method removes multi-layered bevel/backside polymers adhering to a bevel surface and a backside of a target substrate. The multi-layered bevel/backside polymers include an inorganic layer and an organic layer. The bevel/backside polymer removing method includes mechanically destroying the multi-layered bevel/backside polymers and heating residues of the multi-layered bevel/backside polymers mechanically destroyed.

Abstract: A cleaning device for cleaning pin contact elements and support hardware in a semiconductor testing apparatus that has a cleaning layer with a predetermined configuration appropriate for the particular pin contact elements and a substrate having a configuration to be introduced into the testing apparatus during the normal testing operating of the testing apparatus. The cleaning layer secured to the substrate has predetermined characteristics that cause the pad to clean debris the pin contact elements and support hardware when the pin contact elements and support hardware contact the pad during the normal operation of the testing machine.

Abstract: A substrate processing apparatus according to the present invention is provided with a spin chuck (3) that holds a substrate (W) and rotates the same. A process liquid supply system (11, . . . ) is disposed to supply a process liquid to the substrate rotated by the spin chuck. There are disposed a fluid nozzle (12) that supplies to the substrate a drying fluid having a higher volatility than that of the process liquid, and an inert gas nozzle (13) that supplies an inert gas to the substrate. A nozzle moving mechanism (15, 52, . . . ) is disposed that moves the nozzles (12, 13) radially outward relative to a rotational center (Po) of the substrate, while maintaining the inert gas nozzle nearer to the rotational center of the substrate than the fluid nozzle.

Abstract: A method for predictably cleaning the contact elements and support hardware of a tester interface, such as a probe card and a test socket, while it is still in manual, semi-automated, and automated handling device and the electrical test equipment is disclosed. In the method, a cleaning device is loaded into wafer prober or packaged device handler and the pin contact elements and support hardware are contacted by the cleaning device.

Abstract: Provided herein are etching, cleaning and drying methods using a supercritical fluid, and a chamber system for conducting the same. The etching method includes etching the material layer using a supercritical carbon dioxide in which an etching chemical is dissolved, and removing an etching by-product created from a reaction between the material layer and the etching chemical using a supercritical carbon dioxide in which a cleaning chemical is dissolved. Methods of manufacturing a semiconductor device are also provided.

Abstract: A sample contamination method according to an embodiment includes spraying a chemical solution containing contaminants into a casing, carrying a semiconductor substrate into the casing filled with the chemical solution by the spraying, leaving the semiconductor substrate in the casing filled with the chemical solution for a predetermined time, and carrying the semiconductor substrate out of the casing after the predetermined time passes.

Abstract: A cleaning device for cleaning a mixing vaporizer is provided. The mixing vaporizer includes a first hole that a raw material flows in therethrough, a second hole that carrier gas flows in therethrough, a mixing space that generates mixed gas by mixing the raw material and the carrier gas, a carrier gas nozzle that is connected to the second hole for supplying the carrier gas to the mixing space, and a third hole that discharges the mixed gas. The cleaning device cleans the mixing vaporizer by circulating a cleaning solution through at least one the first hole, the second hole, and the third hole.

Abstract: An ultrasonic wave generating apparatus includes: a generator including an electric power supply, a controller that generates a control signal, a liquid crystal display indicator, and a transducer drive circuit; and transducer portions. The generator includes: the controller having an internal memory or a port to which an external memory is inserted, and formed of a microcomputer to control the generator and the transducer portions; thyristor portions that are arranged respectively in the front and rear ends of the transducer portions, in which two thyristors are connected in series in the respective thyristor portions; snubber circuit portions that are connected in parallel with the respective thyristor portions; at least one transducer that is connected with the controller and is included in the transducer portions; and choke coils that are connected with one end of the respective transducers in the transducer portions.

Abstract: A method and system for cleaning lithography components including contacting a substrate having residue including organic compounds and graphitic carbon deposited on a surface thereof with hydrogen peroxide vapor. The hydrogen peroxide vapor is irradiated with electromagnetic radiation having a wavelength in the range of 100 nm to 350 nm forming hydroxyl radicals. The hydroxyl radicals react with the residue to remove the residue from the surface of the substrate.

Abstract: A method and apparatus remove photoresist from a wafer. A process gas containing sulfur (S), oxygen (O), and hydrogen (H) is provided, and a plasma is generated from the process gas in a first chamber. A radical-rich ion-poor reaction medium is flown from the first chamber to a second chamber where the wafer is placed. The patterned photoresist layer on the wafer is removed using the reaction medium, and then the reaction medium flowing into the second chamber is stopped. Water vapor may be introduced in a solvation zone provided in a passage of the reaction medium flowing down from the plasma such that the water vapor solvates the reaction medium to form solvated clusters of species before the reaction medium reaches the wafer. The photoresist is removed using the solvated reaction medium.

Abstract: A semiconductor substrate cleaning method includes cleaning a semiconductor substrate formed with a line-and-space pattern, rinsing the substrate, supplying the rinse water to rinse the substrate, and drying the substrate. The rinsing includes supplying deionized water and hydrochloric acid into a mixing section to mix the deionized water and the hydrochloric acid into a mixture, heating the mixture in the mixing section by a heater, detecting a pH value and a temperature of the mixture by a pH sensor and a temperature sensor respectively, adjusting an amount of hydrochloric acid supplied into the mixing section so that the rinse water has a predetermined pH value indicative of acidity, and energizing or de-energizing the heater so that the temperature of the mixture detected by the temperature sensor reaches a predetermined temperature, thereby producing the rinse water which has a temperature of not less than 70° C. and is acidic.

Abstract: A first application of a cleaning material is made to a surface of a substrate. The cleaning material includes one or more viscoelastic materials for entrapping contaminants present on the surface of the substrate. A first application of a rinsing fluid is made to the surface of the substrate so as to rinse the cleaning material from the surface of the substrate. The first application of the rinsing fluid is also performed to leave a residual thin film of the rinsing fluid on the surface of the substrate. A second application of the cleaning material is made to the surface of the substrate having the residual thin film of rinsing fluid present thereon. A second application of the rinsing fluid is then made to the surface of the substrate so as to rinse the cleaning material from the surface of the substrate.

Abstract: A process for treating the surface of a substrate in the manufacture of a semiconductor device. The process comprises providing a concentrated acid or base, a peroxide and water, and delivering the acid or base, the peroxide and the water to the surface of the substrate. The acid or base and the water are delivered separately to the surface of the substrate and allowed to mix on the surface, and the water is delivered in pulses. The present invention also provides an apparatus adapted to carry out this process.

Abstract: A system for drying a surface of a substrate is provided. The system for drying a surface of a substrate comprising: a rotary support; a first dispenser fluidly coupled to a source of liquid, the first dispenser positioned above the surface of the substrate so as to be capable of applying a film of the liquid to the surface of the substrate; a second dispenser fluidly coupled to a source of drying fluid with a supply line, the second dispenser positioned above the surface of the substrate so as to be capable of applying the drying fluid to the surface of the substrate; and a proportional valve operably coupled to the supply line between the second dispenser and the source of drying fluid, the proportional valve capable of being incrementally adjusted from a closed position to an open position.

Abstract: Methods for cleaning a surface of a photomask and for increasing the useable lifetime of the photomask are disclosed. One method includes, a first wafer print processing using a photomask and a pellicle disposed across the photomask, and cleaning the photomask. The cleaning the photomask includes directing a laser beam through the pellicle toward the photomask, the laser beam having a wavelength that is substantially equal to a local maximum of an absorption spectrum of the photomask, heating the photomask with the laser beam, and transferring heat from the photomask to a contaminant disposed on the photomask, thereby thermally decomposing the contaminant.

Abstract: In an example embodiment, a linear wet system includes a carrier and a proximity head in a chamber. The proximity head includes three sections in a linear arrangement. The first section suctions liquid from the upper surface of a semiconductor wafer as the wafer is transported by the carrier under the proximity head. The second section is configured to cause a film (or meniscus) of cleaning foam which is a non-Newtonian fluid to flow onto the upper surface of the wafer. The third section is configured to cause a film of rinsing fluid to flow onto the upper surface of the wafer as the wafer is carried under the proximity head. The third section is defined partially around the second section and up to the first section, so that the third section and the first section create a confinement of the cleaning foam with respect to the chamber.

Abstract: Disclosed are a liquid processing method, a liquid processing apparatus, and a recording medium that can prevent convex portions of a target substrate from collapsing when a rinsing liquid is dried. A base surface of a target substrate is hydrophilized and the surfaces of convex portions become water-repellent by surface-processing the target substrate which includes a main body, a plurality of convex portions protruding from the main body, and a base surface formed between the convex portions on the substrate main body. Next, a rinsing liquid is supplied to the target substrate which has been subjected to the surface processing. Thereafter, the rinsing liquid is removed from the target substrate.

Abstract: Provided are a substrate treating unit, and substrate treating apparatus and method using the same. Two nozzle arms are provided, and photoresist liquid nozzles and an organic solvent nozzle are installed in each of the nozzle arms. A temperature of a photoresist liquid flowing into the photoresist liquid nozzles and a temperature of an organic solvent flowing into the organic solvent nozzle are maintained by a temperature control fluid supplied through the same passage. Also, a waiting port in which a nozzle arm used in a process temporarily waits is provided. The organic solvent is provided to a photoresist liquid nozzle that is not used in a process and is not provided to a photoresist liquid nozzle used in the process.

Abstract: A substrate treatment apparatus includes: substrate holding unit which horizontally holds a substrate; a rotating unit which rotates the substrate held by the substrate holding unit about a vertical axis; and a first nozzle having a first opposing face to be opposed to a region of a lower surface of the substrate inward of a peripheral portion of the substrate in spaced relation to the lower surface of the substrate during rotation of the substrate by the rotating unit and a treatment liquid spout provided in the first opposing face for filling a space defined between the lower surface of the substrate and the first opposing face with a treatment liquid spouted from the treatment liquid spout to keep the space in a liquid filled state.

Abstract: A protective chuck is disposed on a substrate with a gas layer between the bottom surface of the protective chuck and the substrate surface. The gas layer protects a surface region against a fluid layer covering the substrate surface. In some embodiments, the pressure fluctuation at the gas layers is monitored, and through the dynamic feedback, the gas flow rate can be adjusted to achieve a desired operation regime. The dynamic control of operation regime setting can also be applied to high productivity combinatorial systems having an array of protective chucks.

Abstract: Semiconductor equipment is provided to include a reaction chamber, a movable frame, and at least one cleaning brush head. The cleaning brush head is configured to operate on at least one dirty portion to be cleaned within the reaction chamber. The movable frame is disposed within the reaction chamber. The movable frame is capable of carrying a susceptor. The cleaning brush head is capable of touching the dirty portion. The cleaning brush head is capable of moving relative to the dirty portion for removing the residue which is attached to the portion to be cleaned.

Abstract: There is provided an apparatus for treating a substrate using a plurality of treatment solutions in sequence. The apparatus includes treatment liquid collecting vessels for separately collecting used treatment solutions, and an exhaust member for separately discharging pollutant gases generated during a process.

Abstract: The present invention relates to a processing apparatus for fluid-processing a process target body. The processing apparatus is configured to have: supply means for supplying a fluid; process target body processing means for processing the process target body by causing a fluid supplied from the supply means to come into contact with a process target body while preventing the fluid from being scattered; recovery means for recovering the fluid supplied to the process target body processing means; and support means for supporting the process target body processing means so as to not come into contact with the process target body.

Abstract: A protective chuck is disposed on a substrate with a gas bearing layer between the bottom surface of the protective chuck and the substrate surface. The gas bearing layer protects a surface region against a fluid layer covering the substrate surface. The protection of the gas bearing is a non-contact protection, reducing or eliminating potential damage to the substrate surface due to friction. The gas bearing can enable combinatorial processing of a substrate, providing multiple isolated processing regions on a single substrate with different material and processing conditions.

Abstract: A wafer cleaning device comprising a wafer stage for holding a wafer having a surface to be washed, a first nozzle positioned above the wafer, a second nozzle positioned above the wafer. A first height is between the first nozzle and the surface and a second height is between the second nozzle and the surface, wherein the first height is shorter than the second height.

Abstract: Provided is a method of descaling a mask that quickly and effectively removes a material attached to the mask. The method includes: directing a laser beam onto a material attached to the mask; and removing the material attached to the mask.

Abstract: A method for using a film formation apparatus for a semiconductor process to form a thin film on a target substrate while supplying a film formation reactive gas from a first nozzle inside a reaction chamber includes performing a cleaning process to remove a by-product film deposited inside the reaction chamber and the first nozzle, in a state where the reaction chamber does not accommodate the target substrate. The cleaning process includes, in order, an etching step of supplying a cleaning reactive gas for etching the by-product film into the reaction chamber, and activating the cleaning reactive gas, thereby etching the by-product film, and an exhaust step of stopping supply of the cleaning reactive gas and exhausting gas from inside the reaction chamber. The etching step is arranged to use conditions that cause the cleaning reactive gas supplied in the reaction chamber to flow into the first nozzle.

Abstract: The wet treatment of wafer-shaped articles is improved by utilizing a droplet generator designed to produce a spray of monodisperse droplets. The droplet generator is mounted above a spin chuck, and is moved across a major surface of the wafer-shaped article in a linear or arcuate path. The droplet generator includes a transducer acoustically coupled to its body such that sonic energy reaches a region of the body surrounding the discharge orifices. Each orifice has a width w of at least 1 ?m and at most 200 ?m and a height h such that a ratio of h to w is not greater than 1.

Abstract: A pressure is maintained within a volume within which a semiconductor wafer resides at a pressure that is sufficient to maintain a liquid state of a precursor fluid to a non-Newtonian fluid. The precursor fluid is disposed proximate to a material to be removed from the semiconductor wafer while maintaining the precursor fluid in the liquid state. The pressure is reduced in the volume within which the semiconductor wafer resides such that the precursor fluid disposed on the wafer within the volume is transformed into the non-Newtonian fluid. An expansion of the precursor fluid and movement of the precursor fluid relative to the wafer during transformation into the non-Newtonian fluid causes the resulting non-Newtonian fluid to remove the material from the semiconductor wafer.

Abstract: Provided is a dry etcher including an etching device and a cleaning device, more particularly, a dry etcher including an etching device and a cleaning device to which a cleaning process is added so as to be used in a metal layer etching process. The dry etcher includes an etching device into which etching gas is injected to etch a layer formed on a substrate, a substrate transfer device transferring the substrate processed by the etching device, and a cleaning device cleaning the substrate transferred by the substrate transfer device.

Abstract: Strategies for tool designs and their uses wherein the tools can operate in either closed or open modes of operation. The tools easily transition between open and closed modes on demand. According to one general strategy, environmentally controlled pathway(s) couple the ambient to one or more process chambers. Air amplification capabilities upstream from the process chamber(s) allow substantial flows of air to be introduced into the process chamber(s) on demand. Alternatively, the fluid pathways are easily closed, such as by simple valve actuation, to block egress to the ambient through these pathways. Alternative flows of nonambient fluids can then be introduced into the process chamber(s) via pathways that are at least partially in common with the pathways used for ambient air introduction. In other strategies, gap(s) between moveable components are sealed at least with flowing gas curtains rather than by relying only upon direct physical contact for sealing.

Abstract: When a dry cleaning process is performed in a processing chamber by adding nitrogen monoxide (NO) gas to a cleaning gas, the handling is facilitated, and cleaning performance is improved. A substrate processing apparatus includes a processing vessel configured to process a substrate, a first cleaning gas supply system configured to pre-mix a gas containing fluorine atoms with the NO gas and supply the pre-mixed gas into the processing vessel, and a second cleaning gas supply system installed apart from the first cleaning gas supply system and configured to supply the fluorine-containing gas into the processing vessel.

Abstract: The embodiments describe methods for controlling the particles generated when cleaning and drying a wafer in a spin rinse dryer (SRD) module. In some embodiments, the substrate surface is cooled by dispensing deionized (DI) water across the surface of the substrate, while the substrate rests on the SRD chuck. In addition, a method for controlling the particles generated when sleeves in a processing module or SRD contact a substrate surface during a clamping operation or when the sleeves are removed from the substrate surface is provided. A bottom edge or lip of the sleeves and/or the surface of the wafer contacting the sleeve is wetted during clamping/unclamping operations. Alternatively, the substrate may be wetted prior to clamping/unclamping operations.

Abstract: Apparatuses, and related methods, for processing a workpiece that include a particular barrier structure that can overlie and cover a workpiece. Apparatuses, and related methods, for processing a workpiece that include a particular movable member that can be positioned over and moved relative to a workpiece. Apparatuses, and related methods, for processing a workpiece that include a particular ceiling structure that can overlie a processing chamber. Nozzle devices, and related methods, that include a particular annular body. Nozzle devices, and related methods, that include a particular first, second, and third nozzle structure.

Abstract: Embodiments of the invention generally provide methods for cleaning a UV processing chamber. In one embodiment, the method includes flowing an oxygen-containing gas through a plurality of passages formed in a UV transparent gas distribution showerhead and into a processing region located between the UV transparent gas distribution showerhead and a substrate support disposed within the thermal processing chamber, exposing the oxygen-containing gas to UV radiation under a pressure scheme comprising a low pressure stage and a high pressure stage to generate reactive oxygen radicals, and removing unwanted residues or deposition build-up from exposed surfaces of chamber components presented in the thermal processing chamber using the reactive oxygen radicals.

Abstract: An ultrasonic cleaning method of using ultrasonic vibrations to clean an object that is immersed in a cleaning liquid in a cleaning tank is provided. The method includes generating a frequency modulated signal including at least two frequency modulated portions having modulation widths different from each other with a single frequency as a center frequency, such that among the at least two frequency modulated portions a frequency modulated portion having a smaller modulation width is generated at a timing when a frequency modulated portion having a larger modulation width reaches the center frequency. The method further includes generating the ultrasonic vibrations based on the frequency modulated signal and transferring the ultrasonic vibrations to the cleaning tank to clean the object.

Abstract: A method and system for cleaning a substrate in a multi-module cleaning assembly is provided. The method begins by receiving the substrate into the cleaning module. A cleaning chemistry, at a temperature elevated from an ambient temperature, is applied onto a top surface of the substrate. Concurrent with application of the cleaning chemistry, vapors are exhausted from the cleaning chemistry through a port located below a bottom surface of the substrate with the vapor exhaustion providing a negative pressure relative to a pressure external to the cleaning module. The application of the cleaning chemistry is terminated, followed by termination of the exhausting of the vapors. The substrate is dried after the flowing of inert gas is terminated.

Abstract: Cleaning processes for cleaning semiconductor devices or semiconductor tooling during manufacture thereof generally include contacting the semiconductor devices or semiconductor tooling with an antioxidant to form an insoluble adduct followed by solubilizing the adduct with a basic aqueous cleaning solution.

Abstract: Apparatus and methods are provided for efficiently reclaiming solvents used to clean surfaces of semiconductor wafers, etc. More particularly, embodiments of the present invention provide an in-situ reclaim approach that utilizes condensing mechanisms to reclaim evaporated solvent components. In these embodiments, the condensing can occur within a proximity head itself and/or along a vacuum line running from the proximity head to a vacuum tank. Other embodiments of the present invention provide an in-situ reclaim approach that prevents the evaporation of solvents at the onset by maintaining appropriate equilibrium gas phase concentrations between the liquid chemistries and gases used to process wafer surfaces.

Abstract: A substrate subjected to back surface cleaning by a back surface cleaning processing unit is held by a hand of an interface transport mechanism and transported to a cooling unit. The substrate whose temperature has been adjusted by the cooling unit is held by a hand of the interface transport mechanism and transported to an exposure device. The substrate subjected to exposure processing by the exposure device is held by a hand of the interface transport mechanism and transported from the exposure device to a substrate platform.

Abstract: A system and method to clean the pellicle frame and adhesive ring of a photomask reticle are described. One embodiment includes a cover that isolates the photomasks from the pellicle frame. The reticle is secured between a spin chuck and the cover so that the photomasks are isolated and protected from solvents used in a cleaning process. With the reticle secured to the spin chuck, the spin chuck is rotated under a pressurized spray of solvent. The solvent, which is caustic to the photomasks, removes the contaminants from the adhesive ring. After the exposed areas are cleaned, the cover is removed and foreign material from photomasks are removed using less invasive solvents and methods.

Abstract: A protective chuck is magnetically levitated on a substrate with a gas layer between the bottom surface of the protective chuck and the substrate surface. The gas layer protects a surface region of the substrate against a fluid layer covering the remaining of the substrate surface without contacting the substrate, reducing or eliminating potential damage to the substrate surface. The magnetically levitated protective chuck can enable combinatorial processing of a substrate, providing multiple isolated processing regions on a single substrate with different material and processing conditions.

Abstract: A liquid processing apparatus including: a second housing; a first housing capable of being brought into contact with the second housing; a holding part configured to hold an object to be processed; a rotation driving part configured to rotate the object to be processed held by the holding part; front-side process-liquid supply nozzle configured to supply a process liquid onto a peripheral portion of a front surface of the object to be processed held by the holding part; and a storage part disposed on a side of a rear surface of the object to be processed held by the holding part, the storage part being configured to store the process liquid having been passed through the object to be processed. The respective first housing and the second housing can be moved in one direction, so that the first housing and the second housing can be brought into contact and separated from each other.

Abstract: An apparatus for preventing stiction of a three-dimensional MEMS (microelectromechanical system) microstructure, the apparatus including: a substrate; and a plurality of micro projections formed on a top surface of the substrate with a predetermined height in such a way that a cleaning solution flowing out from the microstructure disposed thereabove is discharged.

Abstract: Methods for cleaning a surface of a substrate and for increasing the useable lifetime of a photomask substrate are provided. In one method, the surface of a substrate having a contaminating particulate disposed thereon is cleaned by directing a laser towards the substrate, generating a temperature increase in the substrate and transferring thermal energy from the substrate to the particulate to decompose the particulate. The laser has a wavelength that is substantially the same as a local maximum of the substrate absorption spectrum.

Abstract: Apparatuses are provided for cleaning a processing component using megasonic energy including megasonic tanks, scanning megasonic plates, megasonic jets, and megasonic sweeping beams etc., in combination with selective chemistries to remove sub-micron particulate contaminants from the surfaces of the processing component that is used in cleaning semiconductor, medical, or any other processing substrates. The apparatus includes a processing chamber having a carrier element that is configured to support the processing component. The carrier element includes a mechanism to flip the processing component within the processing chamber during cleaning. A fluid supply assembly supplies a fluid to a surface of the processing component and a beam assembly equipped with a megasonic transducer is used to provide high frequency megasonic acoustic energy to the fluid during cleaning.