Abstract: Provided are a substrate treating apparatus and a method of manufacturing the substrate treating apparatus. Processing units of a process equipment are modularized, and the modularized processing units are detachably disposed in a main frame. According to this characteristic, work time and work effort required for manufacturing the process equipment can be reduced. In addition, maintenance/repair of each of the processing units can be further easily performed.

Abstract: Methods for processing substrates in dual chamber processing systems comprising first and second process chambers that share resources may include performing a first internal chamber clean in each of the first process chamber and the second process chamber; and subsequently processing a substrate in one of the first process chamber or the second process chamber by: providing a substrate to one of the first process chamber or the second process chamber; providing a process gas to the first process chamber and the second process chamber; forming a plasma in only the one of the first process chamber or the second process chamber having the substrate contained therein; and providing an inert gas to the first process chamber and the second process chamber via one or more channels formed in a surface of respective substrate supports disposed in the first process chamber and the second process chamber while processing the substrate.

Abstract: Provided is a scanning arm which moves to collect pollutants on the surface of a semiconductor wafer, for use in a semiconductor wafer pollutant measurement apparatus, and a scanning device using the same. The scanning arm includes: an X-axis portion; a Z-axis portion which is perpendicularly installed with the X-axis portion so as to move forward and backward along the X-axis portion; and a Y-axis portion which is perpendicularly installed with the Z-axis portion so as to move up and down with respect to the Z-axis portion.

Abstract: A substrate holding rotating mechanism is used to hold and rotate a substrate to be processed. The substrate holding rotating mechanism according to the present invention includes at least three spindles, clamp rollers mounted respectively on the spindles for holding a periphery of a substrate, a rotating device for rotating at least one of the clamp rollers, at least one base member on which at least one of the spindles is installed, and a rotational mechanism adapted to allow the base member to be rotatable.

Abstract: The embodiments of the present invention provide apparatus for cleaning patterned substrates with fine features with cleaning materials. The apparatus using the cleaning materials has advantages in cleaning patterned substrates with fine features without substantially damaging the features. The cleaning materials are fluid, either in liquid phase, or in liquid/gas phase, and deform around device features; therefore, the cleaning materials do not substantially damage the device features or reduce damage all together. The cleaning materials containing polymers of a polymeric compound with large molecular weight capture the contaminants on the substrate. In addition, the cleaning materials entrap the contaminants and do not return the contaminants to the substrate surface. The polymers of one or more polymeric compounds with large molecular weight form long polymer chains, which can also be cross-linked to form a network (or polymeric network).

Abstract: A jetspray nozzle for cleaning a photolithographic mask or semiconductor wafer and method for cleaning the same. The jetspray nozzle in one embodiment includes a water supply inlet, a gas supply inlet, a first row of gas injection nozzles communicating with the gas supply inlet, a mixing cavity defining a jetspray nozzle outlet, and a flow mixing baffle disposed in the cavity. The mixing baffle preferably is configured and arranged to combine gas and water in the jetspray nozzle for delivering a concentrated stream of gas with a cluster of micro water droplets entrained in the gas for removing contaminant particles from the mask. The jetspray nozzle is capable of cleaning photo masks or wafers without the use of chemicals. In one embodiment, the water may be deionized water and the gas may be nitrogen. In another embodiment, the jetspray nozzle further includes a second row of gas injection nozzles spaced above or below the first row of gas injection nozzles that communicate with the gas supply inlet.

Abstract: Apparatus monitors a meniscus process that is performed on wafers. Monitoring data for a current process received by a processor indicates characteristics of a gap between the wafer and a process head. The processor is configured to respond to the data that is in the form of orientation monitor signals and to respond to a current recipe. The processor generates meniscus monitor signals for allowing the meniscus to remain stable in further meniscus processing. The monitoring is of current meniscus processing to determine whether a current gap (i) is other than a desired gap of the current recipe, and (ii) corresponds to a stable meniscus. If so, a calibration recipe is identified as specifying the current gap. This calibration recipe specifies parameters for meniscus processing the wafer surface with the current gap. The meniscus processing of the wafer surface is continued using the parameters specified by the identified calibration recipe.

Abstract: A method for cleaning a substrate is provided. In this method, a flow of non-Newtonian fluid is provided where at least a portion of the flow exhibits plug flow. To remove particles from a surface of the substrate, the surface of the substrate is placed in contact with the portion of the flow that exhibits plug flow such that the portion of the flow exhibiting plug flow moves over the surface of the substrate. Additional methods and apparatuses for cleaning a substrate also are described.

Abstract: A cleaning liquid for an electronic material, in particular, a silicon wafer, uses ultra-pure water or hydrogen water as raw material water, and performs cleaning in combination with ultrasonic irradiation under the presence of hydrogen micro-bubbles. The method enables efficient cleaning and removal of particle components and the like on the wafer surface and prevention of re-contamination.

Abstract: A substrate cleaning apparatus is capable of individually setting a threshold value for use in making a check of a resistivity during a rinsing process on a recipe setting screen in each process step. Thus, by setting each threshold value depending on the type of liquid chemical to be used immediately before the rinsing process, the substrate cleaning apparatus can use an optimum threshold value during the rinsing process in each process step to make a check of the resistivity. This allows the proper completion of the rinsing process in each process step.

Abstract: An object of the present is to uniform particle diameters and speeds of liquid droplets in a two-fluid nozzle for cleaning substrates which mixes gas and liquid internally and injects liquid droplets with gas so as to clean a substrate. The two-fluid nozzle for cleaning substrates has a gas supply passage for supplying gas, a liquid supply passage for supplying liquid, and a lead-out passage for leading out internally-formed liquid droplets, wherein an injection port for injecting liquid droplets to the outside is formed at the front end of the lead-out passage, and wherein a cross-sectional area Sb of the injection port is formed smaller than a cross-sectional area Sa of the lead-out passage, and a cross sectional area Sc of an exit of the gas supply passage is formed smaller than the cross-sectional area Sa of the lead-out passage.

Abstract: A substrate treatment apparatus includes a container holder which holds a container for containing multiple substrates vertically stacked in horizontal postures, a substrate treatment section which collectively applies treatment to multiple substrates horizontally stacked in vertical postures, a main conveyance mechanism which conveys multiple substrates horizontally stacked in vertical postures between a substrate delivery position and the substrate treatment section, a carrying in/out mechanism which carries in/out the multiple substrates with respect to the container and changes postures of the multiple substrates between the horizontal postures and the vertical postures, and a sub conveyance mechanism which receives and delivers multiple substrates in vertical postures from and to the carrying in/out mechanism at a transfer position, receives and delivers multiple substrates in vertical postures from and to the main conveyance mechanism at the substrate delivery position, and conveys multiple substrates i

Abstract: A cooling gas is discharged from a cooling gas discharge nozzle toward a local section of a front surface of a substrate on which a liquid film is formed. And then the cooling gas discharge nozzle moves from a rotational center position of the substrate toward an edge position of the substrate along a moving trajectory while the substrate is rotated. As a result, of the surface region of the front surface of the substrate, an area where the liquid film has been frozen (frozen area) expands toward the periphery edge from the center of the front surface of the substrate. It is therefore possible to form a frozen film all over the front surface of the substrate while suppressing deterioration of the durability of the substrate peripheral members since a section receiving supply of the cooling gas is limited to a local area on the front surface of the substrate.

Abstract: Semiconductor device fabrication equipment performs a PEOX (physical enhanced oxidation) process, and includes a remote plasma generator for cleaning a process chamber of the equipment. After a PEOX process has been preformed, a purging gas is supplied into the process chamber to purge the process chamber, and the remote plasma generator produces plasma using a first cleaning gas. Accordingly, a reactor of the remote plasma generator is cleaned by the first cleaning gas plasma. Subsequently, the purging gas is supplied to purge the process chamber, and the remote plasma generator produces plasma using a second cleaning gas to remove the first cleaning gas plasma from the remote plasma generator and the process chamber. Finally, full flush operations are performed to remove any gases remaining in the process chamber.

Abstract: A substrate cleaning apparatus for cleaning a front-side clean target surface 1a and a back-side clean target surface 1b of a edge portion of a substrate 1 by wiping surfaces 12a, 12b of a cleaning tape 12. The substrate cleaning apparatus includes a presser member 11a for pressing the cleaning tape 12 against the clean target surface 1a, a presser member 11b for pressing the cleaning tape 12 against the clean target surface 1b, a tape path passing through between the presser member 11a and the clean target surface 1a and between the presser member 11b and the clean target surface 1b, a moving device for moving the cleaning tape 12 and the substrate 1 relative to each other in a longitudinal direction of the edge portion.

Abstract: A method for removing common contaminates or residues which include but are not limited to ionic residues, particulate residues and moisture from semiconductor wafers used in the manufacture of IC (integrated circuits), liquid crystal displays and flat panel displays. The process includes the use of certain esters or certain esters combined with particular co-solvents. The cleaning method may be utilized in a variety of cleaning processes or process steps and offers economic and performance advantages.

Abstract: A part of the opening of the nozzle insertion hole located in the liquid discharging direction relative to the nozzle inserted in the nozzle insertion hole is enlarged in the liquid discharging direction. Therefore, the droplets which have migrated to the nozzle insertion hole adheres to the internal surface in the liquid discharging direction relative to the nozzle, that is, to the slanted part via the enlarged part. Moreover, the slanted part is provided slanted from the central portion of the nozzle insertion hole toward the enlarged part and separated away from the central portion of the substrate top surface. Hence, the adhering droplets flow in the liquid discharging direction along the slanted part to be discharged from the opening of the nozzle insertion hole.

Abstract: Disclosed herein is a cleaning method useful in removing contaminants from a surface of a coating which comprises an oxide or fluoride of a Group III B metal. Typically the coating overlies an aluminum substrate which is present as part of a semiconductor processing apparatus. The coating typically comprises an oxide or a fluoride of Y, Sc, La, Ce, Eu, Dy, or the like, or yttrium-aluminum-garnet (YAG). The coating may further comprise about 20 volume % or less of Al2O3.

Abstract: A film removing device includes an approach stage having a flat approach part having a surface substantially flush with the surface of a substrate supported on a support member. The flat approach part faces a first side surface of the substrate at a corner of the substrate where the first side surface and a second side surface of the substrate join. A film removing nozzle spouts a solvent toward a peripheral part of the substrate and sucks a solution while being moved along the second side surface and the approach stage. A gas is spouted into a gap between the flat approach part and the corner of the substrate so that the gas flows through the gap toward the second side surface.

Abstract: Disclosed herein is a megasonic cleaning module. The megasonic cleaning module includes a vibrator having a piezoelectric element mounted therein for generating ultrasonic waves by the vibration of the piezoelectric element, a first vibratory rod having a diameter gradually decreased to concentrate the longitudinal ultrasonic waves generated from the vibrator, and a second vibratory rod for progressing the longitudinal ultrasonic waves, generated from the first vibratory rod, in the transverse direction. The size of the second vibratory rod at one side thereof where the second vibratory rod is coupled to the first vibratory rod is less than that of the second vibratory rod at the other side thereof, with the result that the longitudinal ultrasonic waves are not prevented from affecting the wafer.

Abstract: A method is provided for removing a residual fluid remaining at a point of contact between a substrate support member and a back surface of a substrate being prepared by a proximity head. According to the method, the proximity head is applied onto the back surface of the substrate and the substrate support member being held by a carrier. The substrate support member is heated after the substrate support member passes the proximity head. The heating of the substrate support member is discontinued once the residual fluid has substantially evaporated.

Abstract: A plating method, employing a face-down manner of plating and using a resistor body between a substrate and an anode, can securely bring an entire surface to be plated of the substrate into contact with a plating solution without permitting intrusion of air bubbles to the surface to be plated. A resistor body is disposed above the anode and immersed in the plating solution, allowing the plating solution to flow along an upper surface of the resistor body from the periphery toward the center of the resistor body. Thus, a raised portion of the plating solution is created in the center of the upper surface of the resistor body. The substrate is then lowered with the surface facing downwardly so as to fill the space between the surface to be plated of the substrate and the upper surface of the resistor body with the plating solution.

Abstract: A remover composition containing 1,3-propanediamine (a), 1-hydroxyethylidene-1, 1-diphosphonic acid (b) and water, wherein the remover composition contains the component (a) in an amount of from 0.2 to 30% by weight, the component (b) in an amount of from 0.05 to 10% by weight, and the water in an amount of from 60 to 99.75% by weight, and wherein the composition has a pH at 20° C. of from 9 to 13; and a remover composition containing an organic amine (A), an organic phosphonic acid (B), a linear sugar alcohol (C) and water, wherein the remover composition contains the component (A) in an amount of from 0.2 to 30% by weight, the component (B) in an amount of from 0.05 to 10% by weight, the component (C) in an amount of from 0.1 to 10% by weight, and the water in an amount of from 50 to 99.65% by weight, and wherein the composition has a pH at 20° C. of from 9 to 13.

Abstract: A method for manufacturing a semiconductor device includes the step of conducting a cleaning process for a wafer formed with copper wiring lines to remove contaminations produced on a back surface of the wafer. The cleaning process is conducted by injecting onto the back surface of the wafer an etchant for removing contaminations and simultaneously injecting onto a front surface of the wafer a reductant containing hydrogen.

Abstract: A wafer spin chuck and an etcher using the same are provided. According to an aspect of the present invention, there is provide a wafer spin chuck device comprising: a spin body which spins a wafer; and a stationary body which holds the spin body and is under the spin body with a space between the spin body and the stationary body, wherein the stationary body includes a blocking unit which blocks the space with a fluid.

Abstract: Aspects of the invention generally provide methods and apparatus for cleaning adhesive residual on a photomask substrate. In one embodiment, the apparatus includes a processing cell, a support assembly configured to receive a photomask substrate disposed thereon disposed in the processing cell, a protection head assembly disposed above and facing the support assembly, and a head actuator configured to control the elevation of the protection head assembly relative to an upper surface of the support assembly. A cleaning device is provided and positioned to interact with the photomask substrate disposed on the support assembly.

Abstract: A system for processing a substrate is described. The system includes a proximity head, a mechanism, and a liquid supply. The proximity head is configured to generate a controlled meniscus. Specifically, the proximity head has a plurality of dispensing nozzles formed on a face of the proximity head. The dispensing nozzles are configured to supply a liquid to the meniscus and the suction holes are added to remove a used liquid from the meniscus. The mechanism moves the proximity head or the substrate with respect to each other while maintaining contact between the meniscus and a surface of the substrate. The movement causes a thin layer of the liquid to remain on the surface after being contacted by the meniscus.

Abstract: A liquid processing apparatus includes a substrate holding member configured to rotate along with a substrate held thereon in a horizontal state; a rotary cup configured to surround the substrate and to rotate along with the substrate; a liquid supply mechanism configured to supply a process liquid onto at least a front surface of the substrate; and an exhaust/drain section configured to perform gas-exhausting and liquid-draining out of the rotary cup; and a guide member disposed to surround the substrate, having an upper surface to be substantially continued to the front surface of the substrate, and configured to rotate along with the substrate holding member and the rotary cup, such that a process liquid supplied onto the front surface of the substrate and thrown off from the substrate is guided by the upper surface of the guide member from the rotary cup to the exhaust/drain section.

Abstract: A method for laser surface cleaning of a target surface that has limited or no access to the environment directly above the surface to be cleaned. The method includes the ability to clean the surface with a reduced risk of substrate damage. The method includes direct laser excitation of a contaminated substrate surface and thermal transfer from the substrate to the contaminating particulate or contamination layer. The method also includes producing a thermally based removal and reducing a risk of substrate damage by keeping the temperature required to produce surface cleaning below the thermal damage level of the substrate material. In addition, the method includes reducing the risk of substrate damage by utilizing relatively long pulse-widths, providing for improved removal of small contaminants/particles, and directing the beam through a material disposed relative to the surface that is part of the substrates environmental enclosure.

Abstract: The present invention includes methods and materials for making a brush or pad for removing materials, particles, or chemicals from a substrate. The brush or pad includes a rotatable base for supporting a porous pad material. The base include an inner surface and an outer surface and a plurality of channels in the base for interlocking the porous pad material with the base. A porous pad material covers at least a portion of the outer surface of the base and is used for removing material from various substrates. The porous pad material fills one or more of the channels in the base and interlocks the porous pad material with the base. Preferably the channels fluidly connect said inner surface with the outer surface of the base and aid in the alignment of porous pad nodes and the distribution of fluid within the porous pad.

Abstract: The present invention discloses an ultrasonic cleaner in which an automated ultrasonic cleaning operation is executed using an aqueous solution. The cleaner includes a tank having a valve means in fluid communication therewith, a bottom tank portion with at least one drainage aperture therethrough and at least one tank wall depending therefrom to provide a solution retention region. At least one ultrasonic transducer is removably secured to one of the tank bottom and tank wall. A partition in the solution retention region has at least one aperture defined therethrough and defines a service section and a support section thereby.

Abstract: A liquid within a processing tank is caused to overflow, and the overflowing liquid is circulated by a circulation system. In this process, bubbles are discharged into the liquid within the processing tank. Thus, particles within the processing tank are not only carried along by a flow of the liquid but also attach to the bubbles to be carried with the bubbles outwardly of the processing tank. A dip-type substrate processing apparatus removes the particles within the processing tank in a short time with efficiency.

Abstract: An apparatus for cleaning electronic packages comprises a tank containing cleaning fluid and a holder above the tank that supports the electronic packages above a top surface of the cleaning fluid with the electronic packages facing the cleaning fluid. Acoustic energy generators are immersed in the cleaning fluid for generating and propagating acoustic energy towards the top surface of the cleaning fluid to create streaming fluid jets projecting upwardly at the top surface to contact and clean the electronic packages supported on the holder.

Abstract: A system and method for preventing a pattern formed on a substrate from collapsing during a rinsing and drying phase of a fabrication operation includes determining a plurality of process parameters associated with a rinsing chemistry used during the rinsing operation. The process parameters define the characteristics of the rinsing chemistry and a substrate surface layer. A chemistry to reduce the surface tension of the rinsing chemistry (surface tension reducer) with at least one low surfactant chemical is identified based on the process parameters of the rinsing chemistry. The surface tension reducer is applied to the surface of the substrate such that the low surfactant chemical reduces the surface tension of the rinsing chemistry applied to the surface of the substrate thereby preventing the pattern from collapsing.

Abstract: An exhaust foreline for purging fluids from a semiconductor fabrication chamber is described. The foreline may include a first, second and third ports independently coupled to the chamber. A semiconductor fabrication system is also described that includes a substrate chamber that has a first, second and third interface port. The system may also include a multi-port foreline that has a first, second and third port, where the first foreline port is coupled to the first interface port, the second foreline port is coupled to the second interface port, and the third foreline port is coupled to the third interface port. The system may further include an exhaust vacuum coupled to the multi-port foreline.

Abstract: At a vibration applying position, ultrasonic vibration is applied upon a liquid film which is on a surface of a substrate. Concurrently with this, at a drop arrival position which is different from the vibration applying position, drops of a cleaning liquid are supplied to the liquid film, whereby wave-generating vibration which is different from the ultrasonic vibration is applied upon the liquid film. This dramatically improves removal of particles adhering to the surface of the substrate as compared with mere application of ultrasonic vibration. Hence, even when the output, the frequency and the like of the ultrasonic vibration are set to such an extent not damaging the substrate, it is possible to effectively remove particles with the wave-generating vibration and favorably clean the surface of the substrate.

Abstract: A method for using a film formation apparatus for a semiconductor process includes a first cleaning process of removing by a first cleaning gas a by-product film from an inner surface of a reaction chamber of the film formation apparatus, while supplying the first cleaning gas into the reaction chamber, and setting an interior of the reaction chamber at a first temperature and a first pressure to activate the first cleaning gas. The method further includes a second cleaning process of then removing by a second cleaning gas a contaminant from the inner surface of the reaction chamber, while supplying the second cleaning gas into the reaction chamber, and setting the interior of the reaction chamber at a second temperature and a second pressure to activate the second cleaning gas. The second cleaning gas includes a chlorine-containing gas.

Abstract: An substrate processing apparatus includes a substrate holding unit, a process liquid supplying unit, a first guide portion provided around the substrate holding unit for guiding the process liquid scattered from the substrate, a second guide portion provided outside the first guide portion for guiding the process liquid scattered from the substrate, a third guide portion provided outside the second guide portion for guiding the process liquid scattered from the substrate, a first recovery channel provided outside the first guide portion integrally with the first guide portion for recovering the process liquid guided by the second guide portion, a second recovery channel provided outside the first recovery channel integrally with the first guide portion for recovering the process liquid guided by the third guide portion, and a driving mechanism for independently moving up and down the first, second, and third guide portions.

Abstract: After a water film is formed on a wafer front surface in a chamber, the water film is supplied sequentially with an oxidizing component of an oxidation gas, an organic acid component of an organic acid mist, an HF component of an HF gas, the organic acid mist, and the oxidizing component of the oxidation gas. As a result, the HF component and the organic acid component provide cleaning effect on the wafer surface, and a concentration of the cleaning components in the water film within a wafer surface can be even.

Abstract: A carrier for supporting a substrate during processing by a meniscus formed by upper and lower proximity heads is described. The carrier includes a frame having an opening sized for receiving a substrate and a plurality of support pins for supporting the substrate within the opening. The opening is slightly larger than the substrate such that a gap exists between the substrate and the opening. Means for reducing a size and frequency of entrance and/or exit marks on substrates is provided, the means aiding and encouraging liquid from the meniscus to evacuate the gap. A method for reducing the size and frequency of entrance and exit marks is also provided.

Abstract: A rinsing liquid supplier includes a temperature adjuster. The temperature adjuster cools DIW to a temperature lower than room temperature. This temperature adjuster cools down DIW to a temperature not more than 10 degrees centigrade for instance, and cooling down to an even lower temperature of 5 degrees centigrade or below is more preferable. Meanwhile, the temperature adjuster maintains DIW at not less than 0 degrees centigrade, which prevents freezing of the DIW. The cooled DIW supplied to a rinsing liquid pipe is discharged from the rinsing liquid discharge nozzle toward the top surface of the substrate, to thereby form a liquid film. Further, the cooled DIW is discharged toward the rear surface of the substrate from the liquid discharge nozzle via the liquid supply pipe, to thereby form the liquid film on the rear surface. Since the liquid films are already cooled, they are frozen in a short time when the cooling gas is discharged toward the top surface and the rear surface of the substrate.

Abstract: A substrate holding rotating mechanism is used to hold and rotate a substrate to be processed. The substrate holding rotating mechanism according to the present invention includes at least three spindles, clamp rollers mounted respectively on the spindles for holding a periphery of a substrate, a rotating device for rotating at least one of the clamp rollers, at least one base member on which at least one of the spindles is installed, and a rotational mechanism adapted to allow the base member to be rotatable.

Abstract: A substrate processing apparatus of the present invention is to apply processing using a processing liquid to a substrate. The substrate processing apparatus includes a first-side plate disposed oppositely to a first surface of the substrate with a distance and provided with plural discharge ports and suction ports in a surface opposing the first surface, a first-side processing liquid supply mechanism that supplies a processing liquid to the discharge ports in the first-side plate, and a first-side suction mechanism that sucks insides of the suction ports in the first-side plate.

Abstract: A workpiece surface treatment system (1), which obtains a surface-treated workpiece by sequentially carrying a treatment cell (9) containing a workpiece to a series of apparatuses for operations in the respective apparatuses, is characterized by including: a carrying apparatus (2) for sequentially carrying the treatment cell (9) to a series of the apparatuses in the system; a carrying-in/out apparatus (3) for carrying the treatment cell in and out of the carrying apparatus; a surface treatment apparatus (4) for performing a surface treatment on the workpiece by receiving the treatment cell from the carrying apparatus and supplying a surface treatment liquid to the inside of the treatment cell while rotating the treatment cell; and a workpiece collection apparatus (5) for collecting the workpiece by receiving the treatment cell from the carrying apparatus, inverting the treatment cell, and squirting the inside of the treatment cell with water from below to flow out the workpiece, wherein the carrying apparatus

Abstract: A bevel unit comprises CCDs and processing liquid nozzles, and the CCDs take an image of a circumferential edge surface of a substrate. An image processing part detects the distances between the circumferential edge surface of the substrate and the processing liquid nozzles by image processing the signals from the CCDs. A control unit compares thus detected distances between the circumferential edge surface of the substrate and the processing liquid nozzles with set distances from the circumferential edge surface of the substrate to the processing liquid nozzles which are set in a recipe so as to be a desired rim etching width, and calculates an amount of displacement between the detected distances and the set distances. In accordance with the amount of displacement, the control unit activates motors and accordingly positions the bevel unit.

Abstract: A method of and system for cleaning semiconductor wafers minimizes the exposure of the wafers to the air by washing, rinsing and drying the wafers in one cleaning chamber. The system includes a wafer support by which a plurality of wafers can be supported in the cleaning chamber as oriented vertically and spaced from each other, and tubular de-ionized water supply nozzles extending longitudinally in the direction in which the wafers are spaced from each other as disposed to the sides of the wafers. Each de-ionized water supply nozzle has an inner nozzle passageway, and a plurality of sets of nozzle holes extending radially through the main body of the nozzle from the inner nozzle passageway. Each such set of nozzle holes subtends an angle of 80˜100° in a vertical plane and is directed towards a surface of a respective wafer W.

Abstract: A method of cleaning a substrate includes contacting a surface of a semiconductor substrate with a composition comprising a superacid. The semiconductor substrate may be a wafer.

Abstract: An apparatus used to supply a force onto a cleaning solution for processing a substrate for cleaning surface contaminants is disclosed. The apparatus includes a force applicator and a gate. The force applicator is configured to be adjusted to a first height off the surface of the substrate. The gate is positioned adjacent to a trailing point of the force applicator and is configured to be adjusted to a second height off of the surface of the substrate to enable planarization of the cleaning solution as the solution moves to the trailing point.

Abstract: In a substrate cleaning method for cleaning a backside of a substrate on a surface of which a predetermined processing is performed, a two phase substance contacts the backside of the substrate, and a flow of the substance is generated near the backside of the substrate under a specified pressure. The two phase substance is a gas containing aerosol or a supercritical substance, and the specified pressure is higher than or equal to 133 Pa (1 Torr). Further, in the substrate cleaning method, a high-energy light may be irradiated on the backside of the substrate.

Abstract: A cleaning apparatus of organic substances attached to a vapor-deposition mask for low molecular weight organic EL devices comprises a first stage for treating a vapor-deposition mask with a derivative of pyrrolidone, a second stage for rinsing the vapor-deposition mask with water, and a third stage for rinsing the vapor-deposition mask with flowing water. The cleaning apparatus also comprises a fourth stage for treating the vapor-deposition mask with ethanol, a fifth stage for drying the vapor-deposition mask, and a carrying means that carries the vapor-deposition mask to each stage in sequence. It is desirable to adopt N-methyl-2-pyrrolidone as the derivative of pyrrolidone.