Abstract: An apparatus is provided that includes a substrate support assembly for holding the semiconductor substrate and a dispense head for applying a cleaning material to clean the contaminants from the substrate surface. The dispense head extends across a length of the semiconductor substrate and is positioned proximate to the substrate surface at a distance of between about 0.1 mm and about 4.5 mm. The proximate position enables application of a force to the cleaning material as it is applied to the substrate surface as a film, and the cleaning material provided through the dispense head contains a cleaning liquid, a plurality of solid components, and polymers of a polymeric compound, each of the plurality of solid components and polymers being greater than zero and less than 3% of the cleaning material, the plurality of solid components and the polymers are dispersed for application through the dispense head.

Abstract: Methods, systems, and computer programs are presented for processing a substrate in a processing chamber which includes a first chamber and a second chamber. A first surface of the substrate is exposed to the first chamber and a second surface of the substrate is exposed to the second chamber. One method includes an operation for applying a first fluid to the first surface of the substrate, where the first fluid is at a first temperature. Further, the method includes another operation for applying a second fluid to the second surface of the substrate, where the second fluid is at a second temperature. During processing of the substrate, the second temperature is higher than the first temperature, and the second fluid heats the substrate.

Abstract: A liquid processing apparatus processes a lower surface and a side surface of an object to be processed W. The liquid processing apparatus includes: a process-liquid supply mechanism configured to supply a process liquid to the object to be processed; a drain mechanism configured to drain the process liquid having processed the object to be processed W; a rotational cup disposed circumferentially outward the object to be processed W, the rotational cup being configured to guide the process liquid having processed the object to be processed W to the drain mechanism; and a driving part configured to rotate the rotational cup. The rotational cup is provided with a support part that projects circumferentially inward so as to support a circumferential part of the object to be processed W.

Abstract: Improved methods for stripping photoresist and removing etch-related residues from dielectric materials are provided. In one aspect of the invention, methods involve removing material from a dielectric layer using a hydrogen-based etch process employing a weak oxidizing agent and fluorine-containing compound. Substrate temperature is maintained at a level of about 160° C. or less, e.g., less than about 90° C.

Abstract: A sonication cleaning system is provided. The sonication cleaning system includes a cleaning tank configured to contain a liquid and a flow control system configured to cause a gradient cross flow of the liquid through the cleaning tank. The system further includes a sonication generator configured to agitate the liquid in the cleaning tank and a controller configured to vary a power applied to the sonication generator to agitate the liquid in the cleaning tank based on an oscillation position of a workpiece within the cleaning tank.

Abstract: A substrate processing system which enables a minute piece of foreign matter attached to a substrate surface to be detected and are suitable for mass production of substrates. The substrate processing system has a substrate processing apparatus that carries out predetermined processing on a substrate. The substrate processing system comprises a substrate surface processing apparatus having a fluid supply unit that supplies onto a surface of the substrate a fluid containing an altering substance that alters a substance exposed at the surface of the substrate, and a substrate surface inspecting apparatus that inspects the surface of the substrate onto which the fluid has been supplied.

Abstract: Disclosed is a method and a respective apparatus for ultrasonic wet treatment of a plate-like article, which comprises: bringing a solid element, which is connected to a transducer in close proximity to a surface of a plate-like article so that a gap is formed between the solid element and the plate-like article, the gap having a distance d2 between 0.1 mm and 5 mm, dispensing liquid for filling the gap between the solid element and the plate-like article, and detecting ultrasonic waves and/or controlling the distance d2, by measuring the distance d2, comparing the measured distance with a desired distance d0 and adjusting the distance accordingly.

Abstract: There is provided a liquid processing apparatus capable of preventing an atmospheric air of a lower surface side of a substrate, to which a processing liquid is supplied, from circulating and being introduced into an upper surface side of the substrate, to which the processing liquid is not supplied, and capable of decreasing a fuzzy gas consumption supplied to separate the atmospheres between the lower and upper surface sides from each other. An upper plate 5 is disposed at an opposite side to the upper surface of the substrate maintained horizontally and a gas supplier 53, 531 supplies a pressurized gas into a space formed between the upper plate and the substrate. Also, due to a negative pressure built in a space formed between the upper plate and the substrate, an atmospheric gas outside the space is introduced into the space via a gas inlet port.

Abstract: A cleaning apparatus for a semiconductor wafer includes: a gas jet device including a gas nozzle which jets a first gas onto the surface of a semiconductor wafer to thin the thickness of a stagnant layer on the surface of the semiconductor wafer; and a two-fluid jet device including a two-fluid nozzle which jets droplet mist onto a region where thickness of the stagnant layer of the semiconductor wafer is thinned, the droplet mist being mixed two-fluid of a liquid and a second gas.

Abstract: A process chamber for processing semi-conductor wafers. The chamber includes at least one rotor within the process chamber. The rotor is adapted to receive and/or process semi-conductor wafers. The top of the process chamber also includes a tiltable rim. This rim tilts from a non-inclined position to an inclined position. The wafers may be loaded into and unloaded from the process chamber when the rim is in its inclined position.

Abstract: A wafer fabrication process with removal of haze formation from a pellicalized photomask surface is provided. The wafer fabrication process includes pre-print wafer processing, wafer print processing using at least one photomask having a pellicle, photomask clean processing, wafer print processing using the photomask, and post-print wafer processing. The photomask clean processing step includes directing a laser through the pellicle towards an inorganic particle disposed on the photomask to remove the particle from the photomask by thermal decomposition.

Abstract: A method for cleaning plated polished disks used in hard drive media is provided. The method includes positioning plated polished disks in a first batch scrubber having multiple first brushes, wherein each of the plated polished disks is positioned between two of the first brushes, and scrubbing the plated polished disks with the first brushes. The method further includes positioning the plated polished disks scrubbed in the first batch scrubber in a second batch scrubber having multiple second brushes, wherein each of the plated polished disks is positioned between two of the second brushes, and scrubbing the plated polished disks with the second brushes.

Abstract: In a substrate processing method according to the present invention, a cleaning liquid nozzle supplies a rinsing liquid to a central portion of a substrate and thereafter moves from a position corresponding to the central portion of the substrate to a position corresponding to a peripheral, edge portion thereof while supplying the rinsing liquid before stopping at the position corresponding to the peripheral edge portion. Next, a drying liquid nozzle moves from the position corresponding to the peripheral edge portion to the position corresponding to the central portion while supplying a drying liquid. Then, the drying liquid nozzle is kept stationary at the position corresponding to the central portion for a predetermined period of time while supplying the drying liquid. Thereafter, a gas nozzle moves from the position corresponding to the central portion to the position corresponding to the peripheral edge portion while supplying an inert gas.

Abstract: An apparatus, system, and method for a Gigasonic Brush for cleaning surfaces is presented. One embodiment of the system includes an array of acoustic transducers coupled to a substrate where the individual acoustic transducers have sizes in the range of 9 um2 to 250,000 um2. The system may include a positioning mechanism coupled to at least one of a target surface or the array of acoustic transducers, and configured to position the array of acoustic transducers within 1 millimeter of a target surface. The system may also include a cleaning liquid supply arranged to provide cleaning liquid for coupling the array of acoustic transducers to the target surface. The system may further include a controller coupled to the array of acoustic transducers and configured to activate the array of acoustic transducers.

Abstract: A carrier for supporting a substrate during processing by a meniscus fowled by upper and lower proximity heads is described. The carrier includes a frame having an opening sized for receiving a substrate and a plurality of support pins for supporting the substrate within the opening. The opening is slightly larger than the substrate such that a gap exists between the substrate and the opening. Means for reducing a size and frequency of entrance and/or exit marks on substrates is provided, the means aiding and encouraging liquid from the meniscus to evacuate the gap. A method for reducing the size and frequency of entrance and exit marks is also provided.

Abstract: A system is provided for cleaning of probe contacts. The system has a base plate with three mounting means, such as openings, for receiving each an adjustable attachment, and means, such as further openings, for connecting the base plate to a probe machine; and a cleaning plate having on a bottom side three holding means, such as openings, for receiving the respective adjustable attachment, and a top area for supporting a cleaning device, wherein the holding means do not reach into a top area of the cleaning plate; and wherein the adjustable attachment means allows the top area to be leveled.

Abstract: Provided is a liquid processing apparatus in which a target substrate is horizontally held on a substrate holding unit and rotated around a vertical shaft, and the chemicals are supplied from a chemical supplying unit to the bottom surface of the target substrate that is rotating. In particular, the liquid processing apparatus performs a first step in which the chemicals are supplied to the target substrate while rotating the target substrate at a first rotation speed, a second step in which the supply of the chemicals is halted and the chemicals are thrown off by rotating the target substrate at a second rotation speed higher than the first rotation speed, and a third step in which the rinse liquid is supplied to the target substrate while rotating the target substrate at a third rotation speed equal to or lower than the first rotation speed.

Abstract: A cleaning apparatus in which a cleaning process is simplified, a time required for the cleaning process is reduced and which has an excellent cleaning effect, and a high pressure cleaner for use therein are provided.

Abstract: A substrate treatment apparatus is provided, which includes: a seal chamber including a chamber body having an opening, a lid member provided rotatably with respect to the chamber body and configured to close the opening, and a first liquid seal structure which liquid-seals between the lid member and the chamber body, the seal chamber having an internal space sealed from outside; a lid member rotating unit which rotates the lid member; a substrate holding/rotating unit which holds and rotates a substrate in the internal space of the seal chamber; and a treatment liquid supplying unit which supplies a treatment liquid to the substrate rotated by the substrate holding/rotating unit.

Abstract: A substrate cleaning method for cleaning and removing foreign materials adhered to a surface of a substrate includes heating the substrate to peel off the foreign materials from the surface of the substrate by a thermal stress, removing the foreign materials from the surface of the substrate by a temperature gradient created in a proximity of the surface of the substrate, and collecting the foreign materials removed from the surface of the substrate by a collecting unit facing the substrate.

Abstract: A process for surface preparation of a substrate (2), which comprises introducing or running a substrate (2) into a reaction chamber (6, 106). A dielectric barrier (14, 114) is placed between electrodes (1, 10, 110). A high-frequency electrical voltage is generated, to generate filamentary plasma (12, 112). Molecules (8, 108) are introduced into the reaction chamber (6, 106). Upon contact with the plasma, they generate active species typical of reacting with the surface of the substrate. An adjustable inductor (L) placed in parallel with the inductor of the installation is employed to reduce the phase shift between the voltage and the current generated and to increase the time during which the current flows in the plasma (12, 112).

Abstract: A semiconductor apparatus includes a first tank configured to accommodate a first fluid. A second tank is configured to receive overflow of the first fluid into an upper portion of the second tank and to accommodate a second fluid. A cycling system including a first conduit is configured between the first tank and the second tank. The first conduit has an end substantially below a surface of the second fluid. A fluid providing system including a second conduit is fluidly coupled to the second tank and configured to provide the second fluid into the second tank. The second conduit has an end substantially below the surface of the second fluid. An overflow system is coupled to the second tank and configured to remove an upper portion of the second fluid when the surface of the second fluid is substantially equal to or higher than a pre-determined level.

Abstract: Semiconductor equipment is provided to include a reaction chamber, a movable frame, and at least one cleaning brush head. The cleaning brush head is configured to operate on at least one dirty portion to be cleaned within the reaction chamber. The movable frame is disposed within the reaction chamber. The movable frame is capable of carrying a susceptor. The cleaning brush head is capable of touching the dirty portion. The cleaning brush head is capable of moving relative to the dirty portion for removing the residue which is attached to the portion to be cleaned.

Abstract: The present invention provides a substrate cleaning method capable of removing particles from the entire surface of a substrate to be processed at a high removing efficiency. In the substrate cleaning method according to the present invention, a substrate to be processed W is immersed in a cleaning liquid in a cleaning tank 12. Then, ultrasonic waves are generated in the cleaning liquid contained in the cleaning tank 12, so that the substrate W is subjected to an ultrasonic cleaning process. The step of generating ultrasonic waves includes a step of generating ultrasonic waves in the cleaning tank while the cleaning liquid is being supplied into the cleaning tank. A supply rate at which the cleaning liquid is supplied into the cleaning tank at a certain timing in the step of generating ultrasonic waves differs from a supply rate at which the cleaning liquid is supplied into the cleaning tank at another timing in the step of generating ultrasonic waves.

Abstract: Devices, including a wash ring assembly, and methods are provided for the removal of excess fluid or solids from the exterior or interior of a probe used to transfer fluids, for instance, in an automated assay device. Typically, a probe is used to aspirate and dispense a sample fluid material such as whole blood or a reagent. The devices and methods provided herein are useful for removing excess fluid from the exterior or interior of the probe so as to prevent dripping and cross-contamination between samples or reagents. It is also contemplated that, utilizing the devices and methods provided herein, washing and/or drying can be performed simultaneously as the probe is in motion, aspirating a sample and/or dispensing a sample.

Abstract: A liquid processing apparatus, capable of preventing a cleaning solution from remaining on a lifting member of a target object, thereby preventing an attachment of a cleaning solution to an opposite surface of a target object, and preventing an inflow of the cleaning solution into an inert gas supply part to efficiently supply the inert gas to the object, is disclosed. The liquid processing apparatus includes a hollow-shaped support plate to support an object, a hollow-shaped rotary shaft fixedly connected to the support plate, a rotary drive part to rotate the rotary shaft in a predetermined rotating direction, and a lift pin plate arranged in a hollow of the support plate to have lift pins supporting a main body and the processed object. A cleaning solution supply part to supply a cleaning solution and an inert gas supply part to supply an inert gas are extended in a hollow of the rotary shaft.

Abstract: A coating device for coating a medical device with a drug-eluting material uses an in-process drying station between coats to improve a drug release profile. The drying station includes a heat nozzle configured for applying a uniform drying gas. A coating process using the dryer includes a closed-loop control for the gas between drying steps and an improved nozzle for producing more consistent spray patterns.

Abstract: A method of manufacturing cleaning solvents is provided. The method includes selecting a small plurality of test solvents from a large plurality of perspective solvents. The equilibrium composition of a multi-component solution is preferably described by the Hansen solubility model. A small plurality of test solvents is applied to solute samples and the degree of dissolution or swelling recorded. Based on the degree of dissolution or swelling, at least one solvent is selected from the large plurality of perspective solvents based on the Hansen parameters.

Abstract: A micro-bubble generating device is provided with a micro-bubble generating mechanism and a leading conduit provided with a widening section and a tube part, the widening section and the tube part in communication with each other in the leading conduit. The widening section has a hollow shape which has an axis Z as a central axis, and has base surfaces and a peripheral surface, and communicates with a nozzle of the micro-bubble-generating mechanism via one base surface of the widening section, and communicates with the tube part via the other base surface. The cross section orthogonal to a flow axis Z of the micro-bubbles of the widening section is larger than the cross section orthogonal to the flow axis Z of the tube part.

Abstract: In an apparatus and method of generating an ultrasonic vibration, an ultrasonic vibration generated in an ultrasonic vibration generator is transmitted through a material layer to control the intensity and the direction of the ultrasonic vibration. In an apparatus and method of cleaning a wafer, a cleaning solution supplier supplies a cleaning solution for cleaning the wafer onto the wafer. An ultrasonic vibration generator generates an ultrasonic vibration. The ultrasonic vibration is transmitted through a material layer of a transmission member to control the intensity and the direction of the ultrasonic vibration. The ultrasonic vibration is applied to the cleaning solution.

Abstract: A method for cleaning the surface of a silicon substrate, covered by a layer of silicon oxide includes: a) exposing the surface for 60 to 900 seconds to a radiofrequency plasma, generated from a fluorinated gas, to strip the silicon oxide layer and induce the adsorption of fluorinated elements on the substrate surface, the power density generated using the plasma being 10 mW/cm2 to 350 mW/cm2, the fluorinated gas pressure being 10 mTorrs to 200 mTorrs, and the substrate temperature being lower than or equal to 300° C.; and b) exposing the surface including the fluorinated elements for 5 to 120 seconds to a hydrogen radiofrequency plasma, to remove the fluorinated elements from the substrate surface, the power density generated using the plasma being 10 mW/cm2 to 350 mW/cm2, the hydrogen pressure being 10 mTorrs to 1 Torr, and the substrate temperature being lower than or equal to 300° C.

Abstract: A disk is placed into a sonication cleaning tank containing a liquid. A first flow rate and a first sonication power are applied to the liquid to clean the disk. An opacity count is generated indicative of contaminants and/or bubbles in the liquid. Based at least in part on the opacity count, a second flow rate and a second sonication power are then applied to the liquid.

Abstract: A method of cleaning a bevel edge of a semiconductor substrate is provided. A semiconductor substrate is placed on a substrate support in a reaction chamber of a plasma processing apparatus. The substrate has a dielectric layer overlying a top surface and a bevel edge of the substrate, the layer extending above and below an apex of the bevel edge. A process gas is introduced into the reaction chamber and energized into a plasma. The bevel edge is cleaned with the plasma so as to remove the layer below the apex without removing all of the layer above the apex.

Abstract: The present invention improves recover percentage at which a mixed chemical solution discharged from a protective film removing device.

Abstract: The present invention provides a tool for treating microelectronic workpieces with one or more treatment materials, including liquids, gases, fluidized solids, dispersions, combinations of these, and the like.

Abstract: An apparatus for cleaning substrates on a carrier, which has in the interior thereof a plurality of longitudinal passages, which run parallel to one another and are connected to the outside at the underside of the carrier via openings. There is provided a plurality of elongated pipes, which are arranged on a pipe holder and are connected in a fluid-conducting manner to a fluid supply. A centering template is provided, which encompasses the pipes and is displaceable in the longitudinal direction thereof between an attachment position in the end region of the pipes away from the pipe holder and a working position, which lies between the attachment position and the pipe holder. The centering template bears against the carrier, such that the pipes are then aligned exactly with the longitudinal passages.

Abstract: A coating device includes a coating mechanism which includes nozzles for ejecting a liquid material onto front and rear surfaces of the substrate while rotating a substrate in an upright state at a predetermined coating position, a carrying mechanism which carries the substrate between a substrate loading position, the coating position, and a substrate unloading position, and a dummy substrate holding mechanism which holds a dummy substrate at a holding position which is a position different from the substrate loading position, the coating position, and the substrate unloading position, and at which the carrying mechanism is allowed to connect with the dummy substrate.

Abstract: A vacuum processing apparatus includes a vacuum chamber for performing a plasma process and a cleaning process unit for performing a cleaning process to apply a plasma process to a wafer on which a single layer or a laminated film containing a metallic film is formed by using a corrosive gas, and a control unit having a sequence to abort the plasma process when an abnormality occurs in the vacuum chamber and transfer the wafer subjecting to the aborting of the plasma process to the cleaning process unit, after elapsing a predetermined time, to perform the cleaning process.

Abstract: A template cleaning method for cleaning a template for nanoimprint, according to an embodiment of the present invention includes placing a wafer on a stage provided in a chamber, cleaning the wafer placed on the stage, inspecting the wafer for particles after the cleaning of the wafer, placing the template on the stage after the inspection of the wafer, and cleaning the template placed on the stage.

Abstract: A method for cleaning a semiconductor wafer composed of silicon directly after a process of chemical mechanical polishing of the semiconductor wafer includes transferring the semiconductor wafer from a polishing plate to a first cleaning module and spraying both side surfaces of the semiconductor wafer with water at a pressure no greater than 1000 Pa at least once while transferring the semiconductor wafer. The semiconductor wafer is then cleaned between rotating rollers with water. The side surfaces of the semiconductor wafer are sprayed with an aqueous solution containing hydrogen fluoride and a surfactant at a pressure no greater than 70,000 Pa. Subsequently, the side surfaces are sprayed with water at a pressure no greater than 20,000 Pa. The wafer is then dipped into an aqueous alkaline cleaning solution, and then cleaned between rotating rollers with a supply of water. The semiconductor wafer is then sprayed with water and dried.

Abstract: According to one embodiment, a supercritical drying method comprises cleaning a semiconductor substrate with a chemical solution, rinsing the semiconductor substrate with pure water after the cleaning, changing a liquid covering a surface of the semiconductor substrate from the pure water to alcohol by supplying the alcohol to the surface after the rinsing, guiding the semiconductor substrate having the surface wetted with the alcohol into a chamber, discharging oxygen from the chamber by supplying an inert gas into the chamber, putting the alcohol into a supercritical state by increasing temperature in the chamber to a critical temperature of the alcohol or higher after the discharge of the oxygen, and discharging the alcohol from the chamber by lowering pressure in the chamber and changing the alcohol from the supercritical state to a gaseous state. The chamber contains SUS. An inner wall face of the chamber is subjected to electrolytic polishing.

Abstract: A surface treating jig of the present invention includes a treatment solution collecting section having (i) a ring-like groove formed on a surface (a) facing to a surface (a) to be treated of a semiconductor wafer and (ii) a through hole for collecting the treatment solution, the through hole formed so as to be continuous with the ring-like groove. With this arrangement, the present invention provides a surface treatment apparatus that prevents the treatment solution from spattering to a surface other than the surface (a) to be treated, and thereby, treatment with the treatment solution can be performed only with respect to the target surface.

Abstract: A liquid processing apparatus 1 comprises a casing 5, a substrate holding mechanism 20 that holds a wafer (substrate to be processed) W, a process-liquid supplying mechanism 30 that supplies a process liquid, a draining cup 12 that receives a process liquid, and a draining pipe 13 that discharges a process liquid outside. The process-liquid supplying mechanism 30 includes a first chemical-liquid supply mechanism that supplies a hydrofluoric process liquid, and a drying-liquid supplying mechanism that supplies an organic solvent for drying a wafer W. A control part 50 causes the first chemical-liquid supplying mechanism to supply a hydrofluoric process liquid, and then causes the drying-liquid supplying mechanism to supply an organic solvent. In addition, before the control part 50 causes the drying-liquid supplying mechanism to supply an organic solvent, the control part causes a cleaning mechanism 10 to remove an alkaline component in a casing 5.

Abstract: Methods and apparatus are provided for using various megasonic apparatus including megasonic tanks, scanning megasonic plates, megasonic jets, and megasonic sweeping beams etc., in combination with selective chemistries to remove sub-micron particulate contaminants from the surfaces of the processing equipment used in semiconductor, medical, or any other processing environments.

Abstract: A substrate processing apparatus includes: a brush for cleaning a substrate; a seesaw member which is swingable with a support member serving as a fulcrum and which has a force point section at one side with respect to the fulcrum and an actuating point section at the other side with respect to the fulcrum; a pushing actuator arranged to give a driving force to the force point section of the seesaw member, thereby to swing the seesaw member around the fulcrum, thus giving, to the seesaw member, a pushing force for pushing the brush to the substrate; and a transmission member which has an affected point section for receiving, from the actuating point section of the seesaw member, a driving force given to the force point section, and which transmits, to the brush, a pushing force for pushing the same to the substrate.

Abstract: Conditioning fluid flow into a proximity head is provided for fluid delivery to a wafer surface. An upper plenum connected to a plurality of down flow bores is supplied by a main bore. The down flow bores provide fluid into the upper plenum, and a resistor bore is connected to the upper plenum. The resistor bore receives a resistor having a shape so as to limit flow of the fluid through the resistor bore. A lower plenum connected to the resistor bore is configured to receive fluid from the resistor bore as limited by the resistor for flow to a plurality of outlet ports extending between the lower plenum and surfaces of the head surface. Fluid flowing through the upper plenum, the resistor bore with the resistor and the lower plenum is substantially conditioned to define a substantially uniform fluid outflow from the plurality of outlet ports, across the width of the proximity head.

Abstract: A system, apparatus and method for processing flat articles with acoustical energy. The inventive system, apparatus and method can remove particles from both sides of a wafer more efficiently and effectively. In one aspect, the invention is a system and/or method for processing flat articles wherein a liquid is applied to both major surfaces of the flat article. A first transducer assembly is positioned adjacent to a first of the major surfaces of the flat article and a second member is positioned adjacent to a second of the major surfaces. The first transducer assembly generates and transmits acoustical energy to the first major surface of the flat article while the second member either: (1) reflects the acoustical energy generated by the first transducer assembly back to the second major surface of the flat article; and/or (2) generates and transmits acoustical energy to the second major surface of the flat article.

Abstract: A plating apparatus has a steam treatment chamber configured to perform a steam treatment using steam on a surface of a substrate, and a plating chamber configured to plate the surface of the substrate subjected to the steam treatment. The plating apparatus also has an acid treatment chamber configured to bring the surface of the substrate subjected to the steam treatment into contact with an acid liquid. The plating apparatus includes a frame housing the steam treatment chamber, the acid treatment chamber, and the plating chamber.

Abstract: A substrate etching apparatus includes a supporting unit for supporting substrate in a vertical position and an etching solution supply unit disposed above the substrate to supply an etching solution to the top of the substrate such that the etching solution runs down both of faces of the substrate from the top of the substrate.

Abstract: A method for fabricating semiconductor devices includes providing a semiconductor substrate having a surface region containing one or more contaminants and having an overlying oxide layer. In an embodiment, the one or more contaminants are at least a carbon species. The method includes processing the surface region using at least a wet processing process to selectively remove the overlying oxide layer and expose the surface region including the one or more contaminants. The method includes subjecting the surface region to a high energy electromagnetic radiation having wavelengths ranging from about 300 to about 800 nanometers for a time period of less than 1 second to increase a temperature of the surface region to greater than 1000 degrees Celsius to remove the one or more contaminants. The method includes removing the high energy electromagnetic radiation to cause a reduction in temperature to about 300 to about 600 degrees Celsius in a time period of less than 1 second.