Abstract: In a liquid processing apparatus configured to remove, from a substrate including a first film and a second film formed above the first film, the first film and the second film, a first chemical-liquid supply part supplies, to a substrate W, a first liquid for dissolving the first film, a second chemical-liquid supply part supplies a second chemical liquid for weakening the second film, and a fluid supply part serving also as an impact giving part gives a physical impact to the second film so as to break the second film and supplies a fluid for washing away debris of the broken second film. A control device controls the respective parts such that, after the second liquid has been supplied and then the fluid has been supplied from the fluid supply part, the first chemical liquid is supplied.

Abstract: There is provided a storage water of a silicon wafer wherein a liquid temperature of the storage water is 0 to 18° C. And there is provided a shower water of a silicon wafer wherein a liquid temperature of the shower water is 0 to 18° C. The wafer is stored in the storage water, and showered using the shower water. The present invention also relates to a method for storing silicon wafer wherein the silicon wafer is showered using a shower water of which liquid temperature is 0 to 18° C., and is then stored in liquid using a storage water of which liquid temperature is 0 to 18° C. Thereby, there can be provided a water for storing a silicon wafer, a method for storing it, a water for showering it and a method for showering it wherein degradation of the wafer quality can be prevented.

Abstract: Provided are a cleaning device and a cleaning method of a semiconductor manufacturing apparatus, capable of performing a cleaning process more effectively as compared to conventional cases and obtaining a high cleaning effect. A semiconductor manufacturing apparatus cleaning device 100 includes a pure water steam generating vessel 2 for generating pure water steam from pure water; a supply port 5 for supplying the pure water steam to a cleaning target portion; a supply line 4 for connecting the pure water steam generating vessel with the supply port; a collection port 6 for collecting steam used in cleaning from the cleaning target portion; a collection vessel 8 for condensing and collecting the used steam; and a collection line 7 for connecting the collection port 6 with the collection vessel 8.

Abstract: A method is used for removing a metal contaminant deposited on a quartz member selected from the group consisting of a reaction tube, wafer boat, and heat-insulating cylinder of a vertical heat processing apparatus for a semiconductor process. The method includes obtaining the quartz member unattached to the vertical heat processing apparatus; then, performing diluted hydrofluoric acid cleaning of cleaning the quartz member by use of diluted hydrofluoric acid; then, performing first purified water cleaning of cleaning the quartz member by use of purified water; then, performing hydrochloric acid cleaning of cleaning the quartz member by use of hydrochloric acid; and then, performing second purified water cleaning of cleaning the quartz member by use of purified water.

Abstract: A megasonic cleaning method and a megasonic cleaning apparatus are provided. Microcavitation bubbles may be formed by applying an electromotive force to a cleaning solution using a megasonic energy in a separate room from an object to be cleaned. The microcavitation bubbles having a stable oscillation among the formed microcavitation bubbles may be moved to the object to be cleaned. A surface of the object to be cleaned may be cleaned using the microcavitation bubbles having the stable oscillation. Particles attached onto the surface of the object to be cleaned may be effectively removed while preventing pattern damage.

Abstract: Methods for cleaning a surface of a substrate and for increasing the useable lifetime of a photomask substrate are provided. In one method, a substrate has at least one radiation-produced particle disposed thereon, and a laser that has a wavelength that substantially coincides with a high absorption coefficient of the substrate is directed towards the substrate. A thermal increase is generated in the substrate, and the radiation-produced particle is removed from the substrate by transferring thermal energy from the substrate to the radiation-produced particle until the radiation-produced particle decomposes.

Abstract: There is provided a coating and processing apparatus including a spin chuck horizontally holding a quadrangular substrate and rotating the substrate in a horizontal plane, a coating solution nozzle for supplying a coating solution to a front surface of the substrate horizontally held by the spin chuck, and a solvent supply mechanism provided in the spin chuck for supplying a solvent to a back surface of the substrate, in which the solvent supplied to the back surface of the substrate is allowed to reach the back surface and side surface of each of corners of the substrate by centrifugal force, thereby removing the coating solution attached.

Abstract: A method for removing a hardened photoresist from a semiconductor substrate. An example method for removing a hardened photoresist layer from a substrate comprising a low-? dielectric material preserving the characteristics of the low-?dielectric material includes: a)—providing a substrate comprising a hardened photoresist layer and a low-? dielectric material at least partially exposed; b)—forming C?C double bonds in the hardened photoresist by exposing the hardened photoresist to UV radiation having a wavelength between 200 nm and 300 nm in vacuum or in an inert atmosphere; c)—breaking the C?C double bonds formed in step b) by reacting the hardened photoresist with ozone (O3) or a mixture of ozone (O3) and oxygen (O2) thereby fragmenting the hardened photoresist; and d)—removing the fragmented photoresist obtained in step c) by wet processing with cleaning chemistries.

Abstract: The present invention relates to a wafer cleaning and a wafer bonding method using the same that can improve a yield of cleaning process and bonding property in bonding the cleaned wafer by cleaning the wafer using atmospheric pressure plasma and cleaning solution. The wafer cleaning method includes the steps of providing a process chamber with a wafer whose bonding surface faces upward, cleaning and surface-treating the bonding surface of the wafer by supplying atmospheric pressure plasma and a cleaning solution to the bonding surface of the wafer, and withdrawing out the wafer from the process chamber.

Abstract: A substrate processing apparatus and a substrate processing method are capable of restraining or preventing the generation of streaky particles on a substrate surface by excellent removal of a rinsing liquid therefrom. The substrate processing apparatus has a substrate inclining mechanism for inclining a substrate held by a substrate holding mechanism. After a rinsing liquid has been supplied onto a substrate to form a liquid mass, the substrate is inclined at a small angle by the substrate inclining mechanism. Then, the liquid mass is downwardly moved without being fragmented and then falls down without leaving minute droplets on the substrate top. Thereafter, the substrate is returned to a horizontal posture and then dried.

Abstract: Provided is an apparatus for cleaning and drying a substrate by applying a plurality of chemicals and gases to the substrate. The apparatus may include: a substrate support member including a chuck receiving a substrate; a first nozzle member injecting a drying fluid onto a top surface of the substrate for drying the substrate; a low cover including an opened top and enclosing the chuck; and an upper cover selectively closing the opened top of the low cover so as to dry the substrate in a closed space. Therefore, the apparatus dries a substrate more efficiently and protects the substrate from being contaminated by foreign pollutants. Furthermore, generation of an undesired oxidation layer on the substrate can be prevented.

Abstract: A method for cleaning a diffusion barrier over a gate dielectric of a metal-gate transistor over a substrate is provided. The method includes cleaning the diffusion barrier with a first solution including at least one surfactant. The amount of the surfactant of the first solution is about a critical micelle concentration (CMC) or more. The diffusion barrier is cleaned with a second solution. The second solution has a physical force to remove particles over the diffusion barrier. The second solution is substantially free from interacting with the diffusion barrier.

Abstract: A method for processing a photomask for semiconductor devices. The method includes providing a partially completed mask structure, which has a backside and a face. The face includes a substrate material, a light blocking layer overlying the substrate material, and an overlying patterned photoresist layer overlying the light blocking layer. The method includes supporting the backside of the mask structure to maintain the mask structure in place and maintaining the face of the patterned photoresist layer in a direction parallel to a gravitational force and toward the gravitational force. The method includes rotating the mask structure in an annular manner as the patterned photoresist layer of the mask structure is being maintained in the direction parallel to the gravitational force and toward the gravitational force.

Abstract: A liquid processing apparatus includes: a hollow holding plate configured to hold an object to be processed; a hollow outer rotational shaft fixedly connected to the holding plate; a rotary drive part configured to rotate the outer rotational shaft; and a lift pin plate disposed in a hollow space of the holding plate, and having a lift pin configured to support the object to be processed. Inside the lift pin plate, a cleaning-liquid supply part configured to supply a cleaning liquid is extended. Connected to the lift pin plate is a lifting member configured to locate the lift pin plate on an upper position and a lower position. When located on the lower position, the lift pin plate receives a force of the rotary drive part for rotating the outer rotational shaft so that the lift pin plate is rotated.

Abstract: An apparatus for simultaneously rinsing and drying front and back surfaces of a workpiece comprises a chuck adapted to spin the workpiece, a plurality of posts coupled to the chuck and adapted to support the workpiece, and first and second mechanical arms. The first mechanical arm is adapted to be positioned between the chuck and the workpiece, and to sweep along at least part of the workpiece back surface. The first mechanical arm comprises at least a first rinsing liquid nozzle, and a first tensioactive vapor nozzle. The second mechanical arm is adapted to be positioned adjacent to the workpiece front surface, and to sweep along at least part of the workpiece front surface. The second mechanical arm comprises at least a second rinsing liquid nozzle, and a second tensioactive vapor nozzle.

Abstract: A coating apparatus includes a liquid film forming mechanism configured to form a liquid film of a process liquid for preventing a contaminant derived from a coating liquid from being deposited or left on a back side peripheral portion of a substrate. The liquid film forming mechanism includes a counter face portion facing the back side peripheral portion of the substrate and a process liquid supply portion for supplying the process liquid onto the counter face portion. The coating apparatus further includes a posture regulating mechanism disposed around the substrate holding member and configured to damp a vertical wobble of the peripheral portion of the substrate being rotated. The posture regulating mechanism includes delivery holes arrayed in a rotational direction of the substrate and configured to deliver a gas onto a back side region of the substrate on an inner side of the peripheral portion.

Abstract: A liquid processing apparatus and method capable of separately collecting first and second processing liquids from each other, and preventing a formation of a defect (such as watermarks and particles) on a target substrate are disclosed. In one embodiment, the liquid processing apparatus includes a substrate holding device, a processing liquid supply device to supply a first processing liquid and a second processing liquid, a rotating cup, an outer discharge portion and an inner discharge portion to respectively discharge the first processing liquid and the second processing liquid received from the first receiving surface of the rotating cup, and a discharge portion switch device to open/close the outer discharge portion. The lower end of the first receiving surface of the rotating cup extends to a lower position than the position of the substrate held by the substrate holding device.

Abstract: In an example embodiment, a wet system delivers a flow of cleaning foam through a channel in a proximity head to a meniscus interfacing with a semiconductor wafer. The wet system diverts a sample of the flow from the channel through a transparent cell that is connected to the channel by an input passage that leads from the channel to the transparent cell and by an output passage that leads from the transparent cell back to the channel. The wet system illuminates the sample in the transparent cell with an LED from the top or the back and captures an image of the illuminated sample with a CCD camera. The image shows a morphological attribute of the cleaning foam such as bubble diameter or spacing. The wet system generates a statistical characterization from the morphological attribute and adjusts other attributes of the cleaning foam based on the statistical characterization.

Abstract: There is provided a substrate processing apparatus capable of stably holding a substrate and properly processing the substrate. The substrate processing apparatus is an apparatus that processes a substrate while rotating the substrate, with a place surface of the substrate being oriented in a horizontal direction. The substrate processing apparatus comprises a table including a rotatable base plate having a plurality of projecting members projected outward, and a rotation driving mechanism that rotates the base plate. The table can rotatably hold the substrate such that the projecting members contact the substrate from below with a gap formed between the substrate and the table. The substrate processing apparatus further comprises a pressure adjusting apparatus including a suction duct line having one end thereof being opened to the gap, and a suction mechanism connected to the other end of the suction duct line.

Abstract: Provided are a substrate processing apparatus and a substrate processing method capable of processing of a substrate using a supercritical fluid without exposing the pattern formed on the substrate to an atmospheric environment. The substrate processing apparatus includes a cleaning bath configured to accommodate a substrate and clean the substrate by flowing a cleaning solution, and a processing vessel configured to accommodate the cleaning bath and process the substrate with a supercritical fluid.

Abstract: The present invention relates to a method used to remove post etch organic and inorganic residue as well polymeric residues and contaminants from semiconductor substrates. In one aspect, the method involves contacting the substrate with a composition are comprised of a water soluble organic solvent, a sulfonic acid and water.

Abstract: A cleaning method that can prevent abnormal wear of an O-ring. A cleaning gas containing at least oxygen gas is supplied to the interior of a chamber in which a substrate is accommodated, and radio-frequency voltage is applied to the interior of the chamber to produce oxygen radicals from the cleaning gas. When the amount of deposit produced in the chamber in plasma processing is larger than a predetermined amount, the amount of fluorine radicals in the chamber is increased, and when the amount of the deposit is smaller than the predetermined amount, the amount of fluorine radicals in the chamber is decreased.

Abstract: Systems and methods for exposing semiconductor workpieces to vapors for through-hole cleaning and/or other processes are disclosed. A representative method includes exposing a semiconductor workpiece to a vapor, with the semiconductor workpiece having an opening extending from a first surface of the workpiece through the workpiece to a second surface facing opposite from the first surface. The opening can include a contaminant, and the method can further include drawing the vapor and the contaminant through at least a portion of the opening and away from the second surface of the semiconductor workpiece.

Abstract: A substrate processing apparatus of a simplified structure, which is capable of decreasing an amount of a process liquid to be used, and of restraining change in temperature of the process liquid is provided. The substrate processing apparatus includes: a processing unit that holds one substrate and processes the substrate held by the processing unit; a processing bath capable of simultaneously accommodating a plurality of substrates, the processing bath storing a process liquid into which a substrate is immersed so as to be processed, the process liquid being circulatingly supplied to the processing bath; and a transfer unit that simultaneously transfers substrates whose number is less than the number of substrate that can be accommodated in the processing bath. The transfer unit transfers, at least, to the processing bath in which the process liquid is stored. A substrate is processed with the use of at least one of the processing unit and the processing bath.

Abstract: A foreign matter removal method that removes foreign matter attached to a surface of a substrate having been subjected to predetermined processing. An edge of a rotating substrate mounted on a mounting stage is irradiated with misalignment measurement laser light. The misalignment measurement laser light other than the laser light blocked by the edge of the substrate is received, and power thereof is detected. The amount of misalignment of the substrate is calculated based on the detected power of the misalignment measurement laser light and a detected rotation angle of the rotating substrate. The misalignment of the substrate is corrected for based on the calculated amount of misalignment. After that, foreign matter removal laser light is irradiated, and a process gas that is to react with the foreign matter is jetted to the edge of the substrate. Consequently, the foreign matter attached to the substrate is decomposed and removed.

Abstract: Embodiments of the current invention describe a cleaning solution for the removal of high dose implanted photoresist, along with methods of applying the cleaning solution to remove the high dose implanted photoresist and combinatorially developing the cleaning solution.

Abstract: A substrate processing method includes covering, in advance, the surface of a substrate with water, holding the substrate generally horizontally with the surface facing upward and rotating it in a horizontal plane, and blowing to the substrate top surface drying gas flow that is thin in area in comparison with the substrate surface, in which the water is removed from the substrate top surface by the rotation in the horizontal plane while blowing the drying gas flow, a substrate processing apparatus for implementing the above method, and a control program for use with the above method and apparatus.

Abstract: A wafer spin chuck and an etcher using the same are provided. According to an aspect of the present invention, there is provide a wafer spin chuck device comprising: a spin body which spins a wafer; and a stationary body which holds the spin body and is under the spin body with a space between the spin body and the stationary body, wherein the stationary body includes a blocking unit which blocks the space with a fluid.

Abstract: A washing device of a substrate for a magnetic recording medium of the present invention includes an immersion tank; a plurality of screw conveyors that are provided in the immersion tank and that hold the substrates for a magnetic recording medium; and a rotation mechanism that causes synchronous rotation of and supports the plurality of screw conveyors, wherein both ends of main shafts of the screw conveyors are provided outside of the immersion tank, the main shafts of these screw conveyors penetrate the tank walls of the immersion tank in a non-contact manner, and the plurality of substrates for a magnetic recording medium that are held by the plurality of screw conveyors are washed by a wet process using a washing liquid that is contained in the immersion tank.

Abstract: Disclosed is a liquid treatment apparatus capable of effectively exhausting processing liquid atmosphere around a target object. The liquid treatment apparatus includes a container, a support part located within the container that supports the target object, a rotation driving mechanism to rotate the target object supported by the support part, a processing liquid supply mechanism to supply a processing liquid to the target object, and a rotation cup, which is located outside of the outer circumference of the target object and is rotatable together with the support part. A rotation exhaust cup is arranged above the rotation cup and is rotatable together with the rotation cup. A discharge mechanism discharges processing liquid atmosphere guided by the rotation cup and the rotation exhaust cup.

Abstract: Methods and apparatus for creating and controlling transient cavitation are disclosed. An example method includes selecting a range of bubble sizes to be created in a liquid and selecting characteristics for an acoustic field to be applied to the liquid. The method further includes creating gas bubbles of the selected range of bubble sizes in the liquid, creating an acoustic field with the selected characteristics and subjecting the liquid to the acoustic field. In the example method, at least one of the range of bubble sizes and the characteristics of the acoustic field is selected in correspondence with the other so as to control transient cavitation in the liquid for the selected range of bubble sizes. Particularly, the methods and apparatus may be used for the cleaning of a surface, such as a semiconductor substrate.

Abstract: Methods and apparatuses for cleaning a surface of a substrate are presented. The method comprises positioning a substrate at a controllable distance from a piezoelectric transducer, supplying a cleaning liquid between the substrate and the transducer, applying an oscillating acoustic force to the cleaning liquid by actuating the transducer, and moving the transducer relative to the substrate. The method further comprises, while moving the transducer relative to the substrate, measuring a value that indicates a distance between a surface of the substrate and the transducer, comparing the measured value to a desired value, and adjusting the distance between the surface and the transducer so that the measured value is maintained substantially equal to the desired value. The measured value may be the distance between the surface of the substrate and the transducer or a phase shift between an alternating current and voltage applied to the transducer.

Abstract: Disclosed is a substrate cleaning method for prevent damage to a pattern formed on a substrate. The substrate cleaning method includes cleaning the substrate by striking cleaning particulates carried in a flow of dry air or inert gas against a surface of the substrate, and removing the cleaning particulates.

Abstract: A resist removing device 1 functions to remove a resist from a substrate while preventing occurrence of popping phenomenon and at the same time attains reduction in cost of energy for the resist removing and has a simplified constitution. The resist removing device 1 is equipped with a chamber 2 for containing therein a substrate 16 (for example, a substrate having a high-doze ion implanted resist), and with a pressure below the atmospheric pressure, the chamber 2 is fed with ozone gas, unsaturated hydrocarbons and water vapor. The ozone gas may be an ultra-high concentrated ozone gas that is produced by subjecting an ozone containing gas to a liquefaction-separation with the aid of a vapor pressure difference and then vaporizing the liquefied ozone. For cleaning the substrate 16 thus treated, it is preferable to use ultra-pure water. The chamber 2 is equipped with a susceptor 15 for holding the substrate 16. The susceptor 15 is heated to a temperature of 100° C. or below.

Abstract: The present invention provides a method for cleaning a surface of a substrate that includes directing a laser towards at least one radiation-produced particle disposed on a substrate, generating a thermal increase in the particle and removing the particle from the substrate by thermal decomposition. The laser has a wavelength that substantially coincides with a high absorption coefficient of the particle.

Abstract: An apparatus for applying a layer to a hydrophobic surface. The apparatus including: a chuck having a top surface and rotatable about a axis perpendicular to the top surface and passing through a center point of the top surface; and hollow first and second dispense nozzles having respective first and second bores, the first and second dispense nozzles mounted on a application head disposed above the top surface of the chuck, the application head moveable in a direction parallel to the top surface of the chuck, the first dispense nozzle alignable over the center point when the application head is in a first position and the second dispense nozzle alignable over the center point when the application head is in a second position, at least a portion of the bore of second dispense tube having a maximum cross-sectional dimension of between about 0.5 millimeters and about 2.0 millimeters.

Abstract: A cleaning apparatus comprises a container configured to hold an article to be cleaned, a cleaning solvent dispenser configured to supply a cleaning solvent to the container, an energy generator configured to provide thermal energy to an interior of the container; and a control device in communication with the energy generator and configured to select thermal energy sufficient to sublimate the particles. The cleaning solvent comprises a solvent and nanofabricated particles dispersed therein. The control device controls the energy generator to provide thermal energy to the cleaning solvent in container in which the article is submerged in order to cause sublimation of the particles.

Abstract: Various methods and apparatus for simultaneously cleaning two single-sided hard memory disks is provided. The two disks are placed in concentric contact merge orientation such that the outwardly facing surface of each disk, which has memory storage capabilities, may be simultaneously cleaned by equipment designed to clean one double-sided disk. Conversely, no effort is expended in cleaning the abutting inactive surfaces of the disks.

Abstract: When a substrate is subjected to bevel cleaning processing, a first magnet plate is arranged at a lower position, and a second magnet plate is arranged at an upper position. In this case, each of chuck pins enters a closed state in a region outside the first magnet plate, while entering an opened state in a region outside the second magnet plate. That is, a holder in each of the chuck pins is maintained in contact with an outer edge of the substrate when it passes through the region outside the first magnet plate, while being spaced apart from the outer edge of the substrate when it passes through the region outside the second magnet plate.

Abstract: A wafer W is processed by supplying a two-fluid, high pressure jet water, or mega-sonic water onto the wafer W, while rotating the wafer W in an essentially horizontal state. After supply of the cleaning fluid is stopped, the wafer W is dried by rotating the wafer W at a higher speed than that used in supplying the cleaning fluid. No rinsing process using purified water is performed in a period after stopping supply of the cleaning fluid and before rotating the substrate at the higher speed.

Abstract: A method for fabricating semiconductor devices, e.g., strained silicon MOS device, includes providing a semiconductor substrate (e.g., silicon wafer) having a surface region, which has one or more contaminants and an overlying oxide layer. The one or more contaminants is at least a carbon species. The method also includes processing the surface region using at least a wet process to selectively remove the oxide layer and expose the surface region. The method further includes subjecting the surface region to a laser treatment process for a time period of less than 1 second to increase a temperature of the surface region to greater than 1000 degrees Celsius to remove the one or more contaminants provided on the surface region. The method also includes removing the laser treatment process to cause a reduction in temperature to about 300 to about 600 degrees Celsius in a time period of less than 1 second.

Abstract: Devices, including a wash ring assembly, and methods are provided for the removal of excess fluid or solids from the exterior or interior of a probe used to transfer fluids, for instance, in an automated assay device. Typically, a probe is used to aspirate and dispense a sample fluid material such as whole blood or a reagent. The devices and methods provided herein are useful for removing excess fluid from the exterior or interior of the probe so as to prevent dripping and cross-contamination between samples or reagents. It is also contemplated that, utilizing the devices and methods provided herein, washing and/or drying can be performed simultaneously as the probe is in motion, aspirating a sample and/or dispensing a sample.

Abstract: A processing system 1 comprises: a processing vessel 30 configured to accommodate an object to be processed W in a processing space 83; a process-fluid generating part 41 configured to generate a process fluid of a predetermined temperature; and a main duct 56 arranged between the process-fluid generating part 41 and the processing vessel 30, the main duct 56 being configured to guide the process fluid supplied from the process-fluid generating part 41. A process-fluid supply duct 171 is arranged on a downstream side of the main duct 56 via a switching valve 70, the process-fluid supply duct 171 being configured to introduce the process fluid into the processing space 83 of the processing vessel 30. A process-fluid bypass duct 172 is arranged on the downstream side of the main duct 56 via the switching valve 70, the process-fluid bypass duct 172 being configured to guide a process fluid, which is not introduced to the process-fluid supply duct 171, so as to bypass the processing space 83.

Abstract: A substrate (W) is processed with the use of a process liquid such as a deionized water. Then, a first fluid which is more volatile than the process liquid is supplied to an upper surface of the substrate (W) from a fluid nozzle (12) to form a liquid film. Next, a second fluid which is more volatile than the process liquid is supplied to the upper surface of the substrate (W) from the fluid nozzle (12), while the wafer (W) is being rotated. During this supply operation, a supply position (Sf) of the second fluid to the substrate (W) is moved radially outward from a rotational center (Po) of the substrate (W). As a result, it is possible to prevent the generation of particles on the substrate (W) after it is dried by using the first and second fluids.

Abstract: Provided is a substrate processing method that prevents generation of watermarks on a substrate and can be performed at a low cost. The method controls the ambient humidity around the substrate depending on the kind of the chemical liquid, when the substrate is processed with the chemical liquid. The control of the humidity is performed at least in a drying step that dries the substrate W. In one embodiment, the ambient humidity around the substrate is controlled when a fluid containing IPA as a drying fluid is supplied to the substrate W after processing the substrate W with the chemical liquid.

Abstract: An apparatus, system and method for cleaning a substrate edge include a bristle brush unit that cleans bevel polymers deposited on substrate edges using frictional contact in the presence of cleaning chemistry. The bristle brush unit is made up of a plurality of outwardly extending vanes and is mounted on a rotating shaft. An abrasive material is distributed throughout and within the outwardly extending vanes of the bristle brush unit to provide the frictional contact. The bristle brush unit cleans the edge of the substrate by allowing frictional contact of the plurality of abrasive particles with the edge of the substrate in the presence of fluids, such as cleaning chemistry, to cut, rip and tear the bevel polymer from the edge of the substrate.

Abstract: Provided are a substrate supporting unit and a substrate treating apparatus using the substrate supporting unit. The substrate supporting unit comprises a base plate and a supporting portion formed on the base plate. The supporting portion comprises two supporting rods and a plurality of supporting members. The two supporting rods extend in a predetermined direction to be separated from each other. The plurality of supporting members is disposed to be separated from each other in the predetermined direction. Each of the supporting members connects the supporting rods.

Abstract: A substrate processing method includes a cleaning processing step, a mixed organic solvent supplying step, and a fluorine organic solvent supplying step. The cleaning processing step is a step of cleaning a main surface of a substrate by supplying deionized water to the substrate. The mixed organic solvent supplying step is a step of supplying a fluid of a mixed organic solvent to the main surface of the substrate after the cleaning processing step. The fluid of the mixed organic solvent contains a fluid of a water-soluble organic solvent and a fluid of a fluorine organic solvent having a smaller surface tension than that of the deionized water and a lower water solubility than that of the fluid of the water-soluble organic solvent. The fluorine organic solvent supplying step is a step of supplying the fluid of the fluorine organic solvent to the main surface of the substrate without supplying the fluid of the water-soluble organic solvent after the mixed organic solvent supplying step.

Abstract: A process chamber for processing semi-conductor wafers. The chamber includes at least one rotor within the process chamber. The rotor is adapted to receive and/or process semi-conductor wafers. The top of the process chamber also includes a tiltable rim. This rim tilts from a non-inclined position to an inclined position. The wafers may be loaded into and unloaded from the process chamber when the rim is in its inclined position.

Abstract: A rinsing liquid (DIW) is discharged from a rinsing liquid discharge port formed in a blocking member to perform rinsing processing to a substrate surface while a nitrogen gas is supplied into a clearance space, and a liquid mixture (IPA+DIW) is discharged from a liquid mixture discharge port formed in the blocking member to replace the rinsing liquid adhering to the substrate surface with the liquid mixture while the nitrogen gas is supplied into the clearance space. Thus, an increase of the dissolved oxygen concentration of the liquid mixture can be suppressed upon replacing the rinsing liquid adhering to the substrate surface with the liquid mixture, which makes it possible to securely prevent from forming an oxide film or generating watermarks on the substrate surface.