Abstract: An apparatus and method perform supersonic cold-spraying to deposit N and P-type thermoelectric semiconductor, and other polycrystalline materials on other materials of varying complex shapes. The process developed has been demonstrated for bismuth and antimony telluride formulations as well as Tetrahedrite type copper sulfosalt materials. Both thick and thin layer thermoelectric semiconductor material is deposited over small or large areas to flat and highly complex shaped surfaces and will therefore help create a far greater application set for thermoelectric generator (TEG) systems. This process when combined with other manufacturing processes allows the total additive manufacturing of complete thermoelectric generator based waste heat recovery systems. The processes also directly apply to both thermoelectric cooler (TEC) systems, thermopile devices, and other polycrystalline functional material applications.

Abstract: A semiconductor sintered body comprising a polycrystalline body, wherein the polycrystalline body includes silicon or a silicon alloy, wherein the average grain size of the crystal grains forming the polycrystalline body is 1 ?m or less, and wherein nanoparticles including one or more of a carbide of silicon, a nitride of silicon, and an oxide of silicon are present at a grain boundary of the grains.

Abstract: A thermoelectric material includes a parent phase in which an MgSiSn alloy is a main component, a void formed in the parent phase, and a silicon layer that is formed on at least a wall surface of the void and that includes silicon as a main component. The thermoelectric material further includes MgO in an amount of 1.0 wt. % or more and 20.0 wt. % or less. The silicon layer includes amorphous Si, or amorphous Si and nanosized Si crystals, and the parent phase includes a region in which the composition ratio of the Si of the chemical composition of the MgSiSn alloy is higher than in the other regions and a region in which the composition ratio of the Sn of the chemical composition of the MgSiSn alloy is higher than in the other regions. With these configurations, the thermoelectric material realizes both lower thermal conductivity and lower electrical resistivity.

Abstract: An imaging unit including first semiconductor substrate that includes a photoelectric converter, a heat conductive wiring line provided in contact with the first semiconductor substrate, and a cooling device that controls a temperature of the photoelectric converter via the heat conductive wiring line.

Abstract: Provided is a heat flow switching element which has a larger change in a thermal conductivity and has excellent thermal responsiveness. The heat flow switching element includes an N-type semiconductor layer, an insulator layer laminated on the N-type semiconductor layer, a P-type semiconductor layer laminated on the insulator layer, an N-side electrode connected to the N-type semiconductor layer, and a P-side electrode connected to the P-type semiconductor layer. In particular, the insulator layer is formed of a dielectric. Also, a plurality of N-type semiconductor layers and P-type semiconductor layers are laminated alternately with the insulator layer interposed therebetween.

Abstract: The present invention relates to a novel chalcogen-containing compound that exhibits excellent phase stability even at a temperature corresponding to the driving temperature of a thermoelectric element, and has a high output factor and thermoelectric figure of merit, a method for preparing the same, and a thermoelectric element including the same.

Abstract: A coating liquid includes aluminum phosphate, a nonionic surfactant, and water and/or water-soluble solvent that dissolves or disperses the aluminum phosphate and the nonionic surfactant. An amount of the nonionic surfactant is preferably 1 vol % or more and 10 vol % or less. The nonionic surfactant is preferably at least one selected from the group consisting of ester, ether, alkylglycoside, octylphenol ethoxylate, pyrrolidone, and polyhydric alcohol. Applying such a coating liquid to a surface of a thermoelectric member, and drying and firing the coating liquid enables formation of a dense antioxidant film containing aluminum phosphate on the surface of the thermoelectric member.

Abstract: A chalcogen-containing compound of the following Chemical Formula 1, which may have decreased thermal conductivity and improved power factor in the low temperature region, and thus exhibit an excellent thermoelectric figure of merit, a method for preparing the same, and a thermoelectric element including the same: V1Sna?xInxSb2Tea+3??[Chemical Formula 1] wherein V, a and x are as defined in the specification.

Abstract: There is provided a thermoelectric conversion material formed of an Fe2TiSi-based full-Heusler alloy to which La is added, wherein La is solid-dissolved in the Fe2TiSi-based full-Heusler alloy.

Abstract: Better thermoelectric characteristics of a thermoelectric material containing nanoparticles are achieved. The thermoelectric material contains a plurality of nanoparticles distributed in a mixture of a first material having a band gap and a second material different from the first material. The first material contains Si and Ge. A concentration of atoms of the second material and a composition ratio of Si to Ge satisfy relational expressions in expressions (1) and (2) below with c representing a concentration of atoms (unit of atomic %) of the second material in the thermoelectric material and r representing the composition ratio of Si to Ge: r?0.62c?0.25??(1) r?0.05c?0.06??(2).

Abstract: A thermoelectric conversion element includes a film composed of a conductive oxide, a first electrode disposed on one end of the film composed of the conductive oxide, and a second electrode disposed on another end of the film composed of the conductive oxide, wherein the conductive oxide has a tetragonal crystal structure expressed by ABO3-x, where 0.1<x<1, wherein the conductive oxide has a band structure in which a Fermi level intersects seven bands between a ? point and an R point, and wherein the first electrode and the second electrode are disposed on the film composed of the conductive oxide so that electrical charge moves in a direction of a smallest vector among three primitive translation vectors of the crystal structure.

Abstract: A method of preparing the thermoelectric materials includes coating a thin film of a material having a Seebeck coefficient of ±?V/K or greater on one surface of a substrate, coating a polymer precursor solution for forming a polymer having a glass transition temperature (Tg) of about 50° C. or greater on a top surface of the material thin film, forming a polymer layer on the top surface of the material thin film by curing the polymer precursor solution, and preparing the self-standing flexible thermoelectric composite structure by separating the polymer layer formed on the top surface of the material thin film from the substrate.

Abstract: Thermoelectric materials based on tetrahedrite structures for thermoelectric devices and methods for producing thermoelectric materials and devices are disclosed. The thermoelectric device has a pair of conductors and a p-type thermoelectric material disposed between the conductors. The thermoelectric material is at least partially formed of a hot pressed high energy milled tetrahedrite formed of tetrahedrite ore and pure elements to form a tetrahedrite powder of Cu12-xMxSb4S13 disposed between the conductors, where M is at least one of Zn and Fe.

Abstract: Provided is a thermoelectric conversion material formed from a full Heusler alloy represented by the composition formula: Fe2+?(Ti1??M1?)1??+?(Al1??M2?)1??. M1 represents at least one element selected from the group consisting of V, Nb and Ta, and M2 represents at least one element selected from the group consisting of Group 13 elements except for Al and Group 14 elements. ? satisfies the relation: 0<??0.42, ? satisfies the relation: 0??<0.75, and ? satisfies the relation: 0??<0.5. The valence electron concentration, VEC, satisfies the relation: 5.91?VEC<6.16.

Abstract: A thermoelectric power generation (TEG) unit configured to be integrated into the exhaust system of a vehicle includes a plurality of thermoelectric power generator modules, each comprising an electrically interconnected plurality of p-type and n-type thermoelectric material legs, each leg extending between a substrate on a hot side and a substrate on a cold side of the module, wherein the thermoelectric materials for the legs are half-Heusler compounds having a thermoelectric figure of merit (ZT) greater than 1.0.

Abstract: The present application discloses a thermoelectric material, which contains CsAg5Te3 crystal material. At 700K, the thermoelectric material has an optimum dimensionless figure-of-merit ZT as high as 1.6 and a high stability, and the thermoelectric material can be recycled. The present application also discloses a method for preparing the CsAg5Te3 crystal material. The CsAg5Te3 crystal material is one-step synthesized by a high-temperature solid-state method, using a raw material containing Cs, Ag and Te, so that the high-purity product is obtained while the synthesis time is greatly shortened.

Abstract: A thermoelectric conversion element includes a film composed of a conductive oxide, a first electrode disposed on one end of the film composed of the conductive oxide, and a second electrode disposed on another end of the film composed of the conductive oxide, wherein the conductive oxide has a tetragonal crystal structure expressed by ABO3-x, where 0.1<x<1, wherein the conductive oxide has a band structure in which a Fermi level intersects seven bands between a ? point and an R point, and wherein the first electrode and the second electrode are disposed on the film composed of the conductive oxide so that electrical charge moves in a direction of a smallest vector among three primitive translation vectors of the crystal structure.

Abstract: Systems and methods of manufacturing a thermoelectric, high performance material by using ball-milling and hot pressing materials according to various formulas, where some formulas substitute a different element for part of one of the elements in the formula, in order to obtain a figure of merit (ZT) suitable for thermoelectric applications.

Abstract: The present invention provides a metal-based thermoelectric conversion material having a high figure-of-merit ZT, the thermoelectric conversion material being a p-type or n-type full-Heusler alloy, having a composition of an Fe2TiA type (wherein A is Si and/or Sn), and including crystal grains having an average grain diameter of 30-500 nm. In particular, in the case where the composition of an Fe2TiA type is represented by the empirical formula Fe2+?Ti1+yA1+z, the values of ?, y, and z in an Fe—Ti-A ternary alloy phase diagram lie within the range ? surrounded by the points (50, 37, 13), (45, 30, 25), (39.5, 25, 35.5), (50, 14, 36), (54, 21, 25), and (55.5, 25, 19.5) in terms of (Fe, Ti, A) in at %.

Abstract: Electronic assemblies for thermoelectric generation are disclosed. In one embodiment, an electronic assembly includes a substrate having a first surface and a second surface, and a conductive plane and a plurality of thermal guide traces position on the first surface of the substrate. The conductive plane includes a plurality of arms radially extending from a central region. The plurality of thermal guide traces surrounds the conductive plane, and is shaped and positioned to guide heat flux present on or within the substrate toward the central region of the conductive plane. The electronic assembly may also include a thermoelectric generator device thermally coupled to the central region of the conductive plane, and a plurality of heat generating devices coupled to the second surface of the substrate.

Abstract: Provided are a resin composition that enables simple formation of a film having excellent thermoelectric conversion characteristics and flexibility, and a film that is formed using the resin composition and that has excellent thermoelectric conversion characteristics and flexibility. A thermoelectric conversion material-containing resin composition contains (A) an insulating resin, (B) an inorganic thermoelectric conversion material, and (C) a charge transport material. A film is formed according to a commonly known method using the thermoelectric conversion material-containing resin composition. It is preferable that (B) the inorganic thermoelectric conversion material is in the form of fine tubes or fine wires. Single-walled carbon nanotubes are particularly preferable as (B) the inorganic thermoelectric conversion material.

Abstract: Three-dimensional integrated circuit structures providing thermoelectric cooling and methods for cooling such integrated circuit structures are disclosed. In one exemplary embodiment, a three-dimensional integrated circuit structure includes a plurality of integrated circuit chips stacked one on top of another to form a three-dimensional chip stack, a thermoelectric cooling daisy chain comprising a plurality of vias electrically connected in series with one another formed surrounding the three-dimensional chip stack, a thermoelectric cooling plate electrically connected in series with the thermoelectric cooling daisy chain, and a heat sink physically connected with the thermoelectric cooling plate.

Abstract: A dielectric material having a rutile crystalline structure includes Ti as a major constituent metal element, and, as metal elements other than Ti, a metal element M1 which includes at least one selected from among Ni, Co, and elements belonging to Group 2 according to a periodic table, and a metal element M2 which includes at least one selected from among elements belonging to Group 5 and Group 6 in the periodic table, and, on a basis of a total amount of Ti, the metal element M1, and the metal element M2, a molar ratio x of the metal element M1 is in a range of 0.005 to 0.025 and a molar ratio y of the metal element M2 is in a range of 0.010 to 0.050.

Abstract: Provided are: an Mg—Si system thermoelectric conversion material which exhibits stably high thermoelectric conversion performance; a sintered body for thermoelectric conversion, which uses this Mg—Si system thermoelectric conversion material; a thermoelectric conversion element having excellent durability; and a thermoelectric conversion module. A method for producing an Mg—Si system thermoelectric conversion material according to the present invention comprises a step for heating and melting a starting material composition that contains Mg, Si, Sb and Zn. It is preferable that the contents of Sb and Zn in the starting material composition are respectively 0.1-3.0 at % in terms of atomic weight ratio.

Abstract: According to an embodiment, a thermoelectric conversion material is made of a polycrystalline material which is represented by a composition formula (1) shown below and has a MgAgAs type crystal structure. The polycrystalline material includes a MgAgAs type crystal grain having regions of different Ti concentrations. (AaTib)cDdXe??Composition formula (1) wherein 0.2?a?0.7, 0.3?b?0.8, a+b=1, 0.93?c?1.08, and 0.93?e?1.08 hold when d=1; A is at least one element selected from the group consisting of Zr and Hf, D is at least one element selected from the group consisting of Ni, Co, and Fe, and X is at least one element selected from the group consisting of Sn and Sb.

Abstract: The present invention relates to a thermoelectric conversion material including a carbon nanotube, a thermoelectric conversion element including the same, an article for thermoelectric power generation, and a method for manufacturing the thermoelectric conversion element. The thermoelectric conversion material comprising: a carbon nanotube; and a polythiophene polymer constituted of a repeating unit represented by the following formula (1), in Formula (1), each of R1 and R2 independently represents an alkyl group having 1 to 20 carbon atoms.

Abstract: A thermoelectric conversion device includes a stack in which a first perovskite dielectric film, which includes Sr and Ti and has a first bandgap, and a second perovskite dielectric film, which includes Sr and Ti and has a second bandgap smaller than the first bandgap, are stacked alternately, each of the first and second perovskite dielectric films being doped to have an electric conductivity, the first and the second perovskite dielectric films having respective compositions such that there appears a bandoffset of 0.54 eV in maximum between a conduction band of the first perovskite dielectric film and a conduction band of the second perovskite dielectric film.

Abstract: Disclosed herein is a material having formula (A3+((4-5n)/3)-?B5+n)xTi1?xO2, wherein 0<n<0.8, ? and x is such that the material has a rutile structure, 0<n<0.8, ? is between 0 and 0.025 inclusive, A3+ is a trivalent positive ion and B5? is a pentavalent positive ion. A process for making the material, and its use as a dielectric material, are also described.

Abstract: An apparatus includes a laser source configured to output laser light at a target frequency, and a measurement unit configured to measure a deviation between an actual frequency outputted by the laser source at a current period of time and the target frequency of the laser source. The apparatus includes a feedback control unit configured to, based on the measured deviation between the actual and target frequencies, control the laser source to maintain a constant frequency of laser output from the laser source so that the frequency of laser light transmitted from the laser source is adjusted to the target frequency. The feedback control unit can control the laser source to maintain a linear rate of change in the frequency of its laser light output, and compensate for characteristics of the measurement unit utilized for frequency measurement. A method is provided for performing the feedback control of the laser source.

Abstract: A preparing method of a glass substrate film sputtering target is disclosed, which comprises the following steps of: weighing an alloy material for forming the glass substrate film sputtering target; adding the alloy material weighed into a plasma pressure compaction sintering cavity and sintering the alloy material to obtain a sintered target, wherein the sintering temperature is 500° C.˜1600° C. and the sintering time is 5˜20 minutes; and post-processing the sintered target. A glass substrate film sputtering target prepared by the preparing method is further disclosed. Because the plasma pressure compaction for quick sintering is adopted for the glass substrate film sputtering target and the preparing method thereof of the present disclosure, quality of the target can be improved and the time necessary for preparing the target can be shortened.

Abstract: A method for making a heteroepitaxial layer. The method comprises providing a semiconductor substrate. A seed area delineated with a selective growth mask is formed on the semiconductor substrate. The seed area comprises a first material and has a linear surface dimension of less than 100 nm. A heteroepitaxial layer is grown on the seed area, the heteroepitaxial layer comprising a second material that is different from the first material. Devices made by the method are also disclosed.

Abstract: The present invention provides a thermoelectric conversion material that is a material comprising elements less poisonous than Te and has a Seebeck coefficient comparable to BiTe. The present invention is a full-Heusler alloy that is represented by the composition formula Fe2+?Ti1+ySi1+z and has ?, y, and z allowing the material to fall within the region surrounded by (Fe, Ti, Si)=(50, 37, 13), (50, 14, 36), (45, 30, 25), (39.5, 25, 35.5), (54, 21, 25), and (55.5, 25, 19.5) by at % in an Fe—Ti—Si ternary alloy phase diagram.

Abstract: A thermoelectric material including a thermoelectric matrix; and nano-inclusions in the thermoelectric matrix, the nano-inclusions having an average particle diameter of about 10 nanometers to about 30 nanometers.

Abstract: According to an embodiment, a thermoelectric conversion material made of a polycrystalline material represented by a composition formula (1) shown below and having an MgAgAs type crystal structure is provided. An insulating coat is provided on at least one surface of the polycrystalline material. General formula: (Aa1Tib1)xDyX100-x-y??Composition formula (1) In the composition formula (1) shown above, 0.2?a1?0.7, 0.3?b1?0.8, a1+b1=1, 30?x?35, and 30?y?35 hold. A is at least one element selected from the group consisting of Zr and Hf, D is at least one element selected from the group consisting of of Ni, Co, and Fe, and X is at least one element selected from the group consisting of Sn and Sb.

Abstract: The present invention is generally directed to nanocomposite thermoelectric materials that exhibit enhanced thermoelectric properties. The nanocomposite materials include two or more components, with at least one of the components forming nano-sized structures within the composite material. The components are chosen such that thermal conductivity of the composite is decreased without substantially diminishing the composite's electrical conductivity. Suitable component materials exhibit similar electronic band structures. For example, a band-edge gap between at least one of a conduction band or a valence band of one component material and a corresponding band of the other component material at interfaces between the components can be less than about 5kBT, wherein kB is the Boltzman constant and T is an average temperature of said nanocomposite composition.

Abstract: Nanocomposite materials comprising a SiGe matrix with silicide and/or germanide nanoinclusions dispersed therein, said nanocomposite materials having improved thermoelectric energy conversion capacity.

Abstract: A thermoelectric device is provided. The thermoelectric device includes first and second electrodes, a first leg, a second leg, and a common electrode. The first leg is disposed on the first electrode and includes one or more first semiconductor pattern and one or more first barrier patterns. The second leg is disposed on the second electrode and includes one or more second semiconductor pattern and one or more second barrier patterns. The common electrode is disposed on the first leg and the second leg. Herein, the first barrier pattern has a lower thermal conductivity than the first semiconductor pattern, and the second barrier pattern has a lower thermal conductivity than the second semiconductor pattern. The first/second barrier pattern has a higher electric conductivity than the first/second semiconductor pattern. The first/second barrier pattern forms an ohmic contact with the first/second semiconductor pattern.

Abstract: A thermoelectric material including a compound represented by Formula 1 below: (R1-aR?a)(T1-bT?b)3±y??Formula 1 wherein R and R? are different from each other, and each includes at least one element selected from a rare-earth element and a transition metal, T and T? are different from each other, and each includes at least one element selected from sulfur (S), selenium (Se), tellurium (Te), phosphorus (P), arsenic (As), antimony (Sb), bismuth (Bi), carbon (C), silicon (Si), germanium (Ge), tin (Sn), boron (B), aluminum (Al), gallium (Ga), and indium (In), 0?a?1, 0?b?1, and 0?y<1.

Abstract: Silicon-based thermoelectric materials including isoelectronic impurities, thermoelectric devices based on such materials, and methods of making and using same are provided. According to one embodiment, a thermoelectric material includes silicon and one or more isoelectronic impurity atoms selected from the group consisting of carbon, tin, and lead disposed within the silicon in an amount sufficient to scatter thermal phonons propagating through the silicon and below a saturation limit of the one or more isoelectronic impurity atoms in the silicon. In one example, the thermoelectric material also includes germanium atoms disposed within the silicon in an amount sufficient to scatter thermal phonons propagating through the silicon and below a saturation limit of germanium in the silicon. Each of the one or more isoelectronic impurity atoms and the germanium atoms can independently substitute for a silicon atom or can be disposed within an interstice of the silicon.

Abstract: A thermoelectric conversion device includes a perovskite film over a substrate and formed with first and second electrodes on the perovskite film, wherein the perovskite film includes a domain having a crystal orientation different from a crystal orientation of a crystal that constitutes the perovskite film.

Abstract: Thermoelectric materials with high figures of merit, ZT values, are disclosed. In many instances, such materials include nano-sized domains (e.g., nanocrystalline), which are hypothesized to help increase the ZT value of the material (e.g., by increasing phonon scattering due to interfaces at grain boundaries or grain/inclusion boundaries). The ZT value of such materials can be greater than about 1, 1.2, 1.4, 1.5, 1.8, 2 and even higher. Such materials can be manufactured from a thermoelectric starting material by generating nanoparticles therefrom, or mechanically alloyed nanoparticles from elements which can be subsequently consolidated (e.g., via direct current induced hot press) into a new bulk material. Non-limiting examples of starting materials include bismuth, lead, and/or silicon-based materials, which can be alloyed, elemental, and/or doped. Various compositions and methods relating to aspects of nanostructured thermoelectric materials (e.g., modulation doping) are further disclosed.

Abstract: A thermoelectric conversion material containing an electrically conductive polymer and a thermal excitation assist agent, wherein the thermal excitation assist agent is a compound that does not form a doping level in the electrically conductive polymer, an energy level of LUMO (lowest unoccupied molecular orbital) of the thermal excitation assist agent and an energy level of HOMO (highest occupied molecular orbital) of the electrically conductive polymer satisfy following numerical expression (I): 0.1 eV?|HOMO of an electrically conductive polymer|?|LUMO of a thermal excitation assistant agent|?1.9 eV wherein, in numerical expression (I), |HOMO of an electrically conductive polymer| represents an absolute value of an energy level of HOMO of the electrically conductive polymer, and |LUMO of a thermal excitation assist agent| represents an absolute value of an energy level of LUMO of the thermal excitation assist agent, respectively.

Abstract: A thermoelectric material and a method of making a thermoelectric material are provided. In certain embodiments, the thermoelectric material comprises at least 10 volume percent porosity. In some embodiments, the thermoelectric material has a zT greater than about 1.2 at a temperature of about 375 K. In some embodiments, the thermoelectric material comprises a topological thermoelectric material. In some embodiments, the thermoelectric material comprises a general composition of (Bi1-xSbx)u(Te1-ySey)w, wherein 0?x?1, 0?y?1, 1.8?u?2.2, 2.8?w?3.2. In further embodiments, the thermoelectric material includes a compound having at least one group IV element and at least one group VI element. In certain embodiments, the method includes providing a powder comprising a thermoelectric composition, pressing the powder, and sintering the powder to form the thermoelectric material.

Abstract: Composites comprising a continuous matrix formed from compounds having a rock salt structure (represented by the structure “MQ”) and inclusions comprising chalcogenide compounds having a rock salt structure (represented by the structure “AB”) are provided. Composites having the structure MQ-ABC2, where MQ represents a matrix material and ABC2 represents inclusions comprising a chalcogenide dispersed in the matrix material are also provided.

Abstract: The p- or n-conductive semiconductor material comprises a compound of the general formula (I) SnaPb1-a-(x1+ . . . +xn)A1x1 . . . Anxn(Te1-p-q-rSepSqXr)1+z??(I) where 0.05<a<1 n?1 where n is the number of chemical elements different than Sn and Pb in each case independently 1 ppm?x1 . . . xn?0.05 A1 . . . An are different from one another and are selected from the group of the elements Li, Na, K, Rb, Cs, Mg, Ca, Y, Ti, Zr, Hf, Nb, Ta, Cr, Mn, Fe, Cu, Ag, Au, Ga, In, Tl, Ge, Sb, Bi X is F, Cl, Br or I 0?p?1 0?q?1 0?r?0.01 ?0.01?z?0.01 with the condition that p+q+r?1 and a+x1+ . . . +xn?1.

Abstract: A thermoelectric material includes a stack structure including alternately stacked first and second material layers. The first material layer may include a carbon nano-material. The second material layer may include a thermoelectric inorganic material. The first material layer may include a thermoelectric inorganic material in addition to the carbon nano-material. The carbon nano-material may include, for example, graphene. At least one of the first and second material layers may include a plurality of nanoparticles. The thermoelectric material may further include at least one conductor extending in an out-of-plane direction of the stack structure.

Abstract: A structure of a thermoelectric film including a thermoelectric substrate and a pair of first diamond-like carbon (DLC) layers is provided. The first DLC layers are respectively located on two opposite surfaces of the thermoelectric substrate and have electrical conductivity.

Abstract: A thermoelectric segment and a method for fabricating. The fabricating includes forming structures by depositing thin-film metal-semiconductor multilayers on substrates and depositing metal layers on the multilayers, joining metal bonding layers to form dual structures with combined bonding layers; and removing at least one of the substrates; and using the dual structure to form a thermoelectric segments. The method can include dicing the dual structures before or after removing the substrates. The method can include depositing additional bonding layers and joining dual structures to make thermoelectric segments of different thicknesses. Each multilayer can be about 5-10 ?m thick. Each bonding layer can be about 1-2 ?m thick. The bonding layers can be made of a material having high thermal and electrical conductivity. The multilayers can be (Hf,Zr,Ti,W)N/(Sc,Y,La,Ga,In,Al)N superlattice layers. Metal nitride layers can be deposited between each of the bonding layers and multilayers.

Abstract: Provided is a clathrate compound represented by a following chemical formula, for example, BaaGabAlcSid (where 7.77?a?8.16, 7.47?b?15.21, 0.28?c?6.92, 30.35?d?32.80, and a+b+c+d=54), and a thermoelectric material containing the clathrate compound. A producing method of the thermoelectric material is also provided.

Abstract: A composite material with tailored anisotropic electrical and thermal conductivities is described. A material consists of a matrix material containing inclusions with anisotropic geometrical shapes. The inclusions are arranged in layers oriented perpendicular to the principal direction of electrical and thermal energy flow in the material. The shapes of the inclusions are such that they represent strong or weak barriers to energy flow depending on whether the major axis of the inclusions are parallel to or antiparallel to the flow direction.