Abstract: A class of thermoelectric compounds based on the skutterudite structure with heavy filling atoms in the empty octants and substituting transition metals and main-group atoms. High Seebeck coefficients and low thermal conductivities are achieved in combination with large electrical conductivities in these filled skutterudites for large ZT values. Substituting and filling methods are disclosed to synthesize skutterudite compositions with desired thermoelectric properties. A melting and/or sintering process in combination with powder metallurgy techniques is used to fabricate these new materials.

Abstract: An energy converting circuit, boosting the voltage supplied by a low direct voltage source, comprising a self-oscillating circuit, operating at very low voltage, using a voltage boosting transformer generating control signals of two chopper-boosters operating alternately. The circuit including an enhancement-type field effect translator used in synchronous switching with the self-oscillating circuit, which is in serial connection with an inductive resistor to the terminals of the source (1). The transistor being connected to a user circuit via a diode (15, 16). The circuit is used in a device for supplying electricity to appliances and by the production of thermal converters for the utilization of low-voltage thermoelectricity, as well as in a method for the manufacture of thermal converters on an industrial scale.

Abstract: A family of isostructural compounds have been prepared having the general formula AnPbmBinQ2n+m. These compounds possess a NaCl lattice type structure as well as low thermal conductivity and controlled electrical conductivity. Furthermore, the electrical properties can be controlled by varying the values for n and m. These isostructural compounds can be used for semiconductor applications such as detectors, lasers and photovoltaic cells. These compounds also have enhanced thermoelectric properties making them excellent semiconductor materials for fabrication of thermoelectric devices.

Abstract: A p-type thermoelectric converting substance used as a p-type semiconductor in a thermoelectric converting module consisting essentially of a substance expressed by a chemical formula CoSbxSny or CoSbxGey (2.7<x<3.4, 0<y<0.4, x+y>3), and containing a small amount of oxygen z defined by 2(x+y−3)≧z. The amount of oxygen z is preferably limited such that it is not higher than 0.1 molecules per 1 molecule of Co. An alloy ingot consisting essentially of CoSbxSny or CoSbxGey (2.7<x<3.4, 0<y<0.4, x+y>3) is ground to obtain a raw material powder. Then, the powder is cast into a mold, and the mold is sintered under a non-oxidizing or reducing atmosphere. The thus obtained substance reveals p-conductivity in a stable manner over a wide temperature range, and has excellent thermoelectric converting properties.

Abstract: An improved material for a thermoelectric device and thermoelectric systems incorporating the same.

Abstract: The present invention allows optimum filling of void spaces typically found in skutterudite type crystal lattice structures associated with various semiconductor materials. Selective filling of such void spaces in the associated lattice structure provides semiconductor materials which are particularly beneficial for use in fabricating thermoelectric devices for electrical power generation and/or cooling applications. By selectively filling a portion of the void spaces associated with skutterudite type crystal lattice structure, reductions in thermal conductivity of the resulting semiconducting material may be optimized while at the same time minimizing any reduction in electrical properties of the resulting semiconductor materials, which results in maximizing the thermoelectric figure of merit for the associated thermoelectric device.

Abstract: A miniature thermoelectric module for generating electric power from low power heat sources in the range of a fraction of a Watt to a few Watts. The module comprises an array of thermoelectric elements, each element having a cross section of less than 0.001 square inch and a length of at least 0.25 inch. The elements are separated from each other with a polyimide insulator sheet in a checkerboard array. In a preferred embodiment, the modules are fabricated by hot pressing a stack of alternating plates of p and n doped thin plates all separated by thin sheets of a polyimide insulator material to produce a pressed stack of p and n doped layers. The stack is then sliced to produce layered plates which are then stacked with insulating polyimide layers positioned between the layered plates to produce the checkerboard array of p and n thermoelectric elements. Contacts are applied to electrically connect all of the elements.

Abstract: A solar cell module comprising a photovoltaic element, and at least a surface side filler and a surface protective member which are disposed in this order on a light incident face of said photovoltaic element, wherein said surface side filler comprises a non-crosslinked organic polymer resin and a crosslinked organic polymer resin, said crosslinked organic polymer resin being provided on at least a surface of said non-crosslinked organic polymer resin. Said solar cell module excels particularly in weatherability and moisture resistance.

Abstract: The present invention allows optimum filling of cavities or cages typically found in crystal lattice type structures associated with an inclusion complex such as formed by clathrate compounds. Filling such cavities or cages in the associated crystal lattice type structure provides semiconductor materials which are particularly beneficial for use in fabricating thermoelectric devices for electrical power generation and/or cooling applications. By filling the cavities or cages associated with clathrate compounds with selected metal and/or semi-metal atoms, reductions in thermal conductivity may be optimized while at the same time minimizing any reduction in electrical properties of the resulting semiconductor materials. As a result, the thermoelectric Figure of Merit for a thermoelectric device fabricated from such clathrate compounds is maximized.

Abstract: Ternary tellurium compounds and ternary selenium compounds may be used in fabricating thermoelectric devices with a thermoelectric figure of merit (ZT) of 1.5 or greater. Examples of such compounds include Tl2SnTe5, Tl2GeTe5, K2SnTe5 and Rb2SnTe5. These compounds have similar types of crystal lattice structures which include a first substructure with a (Sn, Ge) Te5 composition and a second substructure with chains of selected cation atoms. The second substructure includes selected cation atoms which interact with selected anion atoms to maintain a desired separation between the chains of the first substructure. The cation atoms which maintain the desired separation between the chains occupy relatively large electropositive sites in the resulting crystal lattice structure which results in a relatively low value for the lattice component of thermal conductivity (&kgr;g).

Abstract: A cold end and a hot end are demarcated in a first thermoelectric semiconductor member. A first member made from metal or a semiconductor is connected to the cold end of the first thermoelectric semiconductor member. The first member is made from a material wherein, heat absorption occurs when first carriers comprising either electrons or holes are injected from the first member into the first thermoelectric semiconductor member. The first carriers transported to the hot end of the first thermoelectric semiconductor member are gathered into a light-emitting region. The light-emitting region is made from a semiconductor material. In this light-emitting region, light emission due to recombination between electrons and holes occurs.

Abstract: Thermoelectric elements for use in a thermoelectric device. The thermoelectric elements have a very large number of alternating layers of semiconductor material deposited on a very thin organic substrate. The layers of semiconductor material alternate between barrier semiconductor material and conducting semiconductor material creating quantum wells within the thin layers of conducting semiconductor material. The conducting semiconductor material is doped to create conducting properties. The substrate preferably should be very thin, a very good thermal and electrical insulator with good thermal stability and strong and flexible.

Abstract: Thermoelectric elements for use in a thermoelectric device. The thermoelectric elements have a very large number of alternating layers of semiconductor material deposited on a very thin flexible substrate. The layers of semiconductor material alternate between barrier semiconductor material and conducting semiconductor material creating quantum wells within the thin layers of conducting semiconductor material. The conducting semiconductor material is doped to create conducting properties. The substrate preferably should be very thin, a very good thermal and electrical insulator with good thermal stability and strong and flexible. In a preferred embodiment, the thin organic substrate is a thin polyimide film (specifically Kapton.RTM.) coated with an even thinner film of crystalline silicon. The substrate is about 0.3 mills (127 microns) thick. The crystalline silicon layer is about 0.1 micron thick. This embodiment includes on each side of the thin Kapton.RTM.

Abstract: A method and apparatus for generating electrical power using animal body heat as the sole energy source. The apparatus includes a plurality of thermocouples connected in series and thermal insulating material for retaining heat in the hot junction and thermal conducting material for conducting heat away from the cold junction whereby a temperature differential between the hot and cold junctions of the thermocouples is maintained body heat energy received by the hot junction is converted to electrical power. The apparatus can be used to replace or supplement the electrical power provided by a low-voltage battery to drive a microelectronic device.

Abstract: A class of thermoelectric compounds based on the skutterudite structure with heavy filling atoms in the empty octants and substituting transition metals and main-group atoms. High Seebeck coefficients and low thermal conductivities are achieved in combination with large electrical conductivities in these filled skutterudites for large ZT values. Substituting and filling methods are disclosed to synthesize skutterudite compositions with desired thermoelectric properties. A melting and/or sintering process in combination with powder metallurgy techniques is used to fabricate these new materials.

Abstract: A superlattice structure having a relatively high thermoelectric figure of merit and suitable for usage in power generation systems, and in heating and/or cooling applications is described. The superlattice structure includes a first plurality of layers formed from material D.sub.z J.sub.1-z, a second plurality of layers formed from material L.sub.x M.sub.1-x D.sub.z J.sub.1-z and a third plurality of layers formed from material L.sub.x M.sub.1-x D.sub.z J.sub.1-z wherein D is a non-metal chalcogen, and wherein J is a non-metal chalcogen, and wherein L is a group IV metal selected from the group of Pb, Sn, and Ge, and wherein M is a Group IV metal selected from the group of Pb, Sn, and Ge, and wherein D is not the same as J, and wherein L is not the same as M, and wherein 0.ltoreq.x.ltoreq.1 and 0.ltoreq.z.ltoreq.1.

Abstract: A thermoelectric material which exhibits an excellent thermoelectric performance even when it is used at elevated temperatures is shown and described. A thermoelectric material is provided having conductive layers made of a first semiconductor only, and barrier layers made of a second semiconductor only, that are alternatingly formed one upon the other. The interface of the barrier layer relative to the conductive layer is roughly formed to include a plurality of protuberances and a plurality of recesses, and the interface of the conductive layer relative to the barrier layer is roughly formed to fit the interface of the barrier layer. The ratio Ry/t of the maximum height Ry of the protuberance on the barrier layer to the thickness t of the barrier layer is set to be Ry/t.gtoreq.0.1. This makes it possible to enhance the strength of the heterojunction interface between the barrier layer and the conductive layer and to improve the heat resistance.

Abstract: A superlattice structure comprising alternating layers of material such as (PbEuTeSe).sub.m and (BiSbn).sub.n where m and n are the number of PbEuTeSe and BiSb monolayers per superlattice period. For one superlattice structure the respective quantum barrier layers may be formed from electrical insulating material and the respective quantum well layers may be formed from semimetal material. For some applications superlattice structures with 10,000 or more periods may be grown. For example, the superlattice structure may comprise alternating layers of (Pb.sub.1-y Eu.sub.y Te.sub.1-z Se.sub.z).sub.m and (Bi.sub.x Sb.sub.1-x).sub.n. According to one embodiment, the superlattice structure may comprise a plurality of layers comprising m layers of (Pb.sub.1-y Eu.sub.y Te.sub.1-z Se.sub.z).sub.m and n layers of Bi.sub.0.9 Sb.sub.0.1, where m and n are preferably between 2 and 20, grown on a BaF.sub.2 substrate with a buffer layer of PbTe separating the substrate and the superlattice structure.

Abstract: A thermoelectric material having excellent thermoelectric performance is shown and described. A thermoelectric material is formed having a plurality of conductive layers and a plurality of barrier layers that are alternatingly formed one upon the other such that one conductive layer is sandwiched by two barrier layers. The conductive layers are composed of a first semiconductor only, and the two barrier layers located on the outermost sides of the material each have a main layer made of a second semiconductor only and a boundary layer made of the first and second semiconductors. A plurality of barrier layers positioned in between the conductive layers each have a main layer and two boundary layers provided on opposite sides of the main layer. The thickness t.sub.1 of the conductive layer and the thickness t.sub.2 of the barrier layer have a relationship of 2t.sub.1 .ltoreq.t.sub.2 .ltoreq.50t.sub.1.

Abstract: A thermoelectric material which exhibits a high thermoelectric performance even at high temperatures is shown and described. A thermoelectric material is provided with a plurality of conductive layers made of a first semiconductor only and a plurality of barrier layers made of a second semiconductor only, which are alternatingly arranged, a diffusion-preventive layer being interposed between neighboring conductive layers and barrier layers. Diffusion between the conductive layers and the barrier layers under high-temperature conditions is prevented, and the thermoelectric material maintains high performance standards at high temperatures.

Abstract: A thermoelectric device is provided which is good in terms of responsibility to heat, by which a relatively large electric power can be produced, which is good in terms of durability, and which can be manufactured at reduced cost. The thermoelectric device includes a substrate having a thickness of 2.0 mm or less, and a thick-film type thermoelectric material formed on the substrate, and having a thickness of from 0.01 mm to 1.0 mm. The thick-film type thermoelectric material is covered with a glassy coating. By the coating, the thick-film type thermoelectric material is inhibited from coming off, and from deteriorating oxidatively.

Abstract: Electrothermal conversion elements, apparatus and methods for use in comparing, calibrating and measuring electrical signals utilizing a thin film heater on a thin, low mass, low thermal conductivity substrate and low mass thermoresistive or PN junction thermal radiation sensors. The element emits IR radiation in response to electrical input. The radiation is collected and converted to an electrical signal proportional to the RMS value of the input signal. Isothermal operation enhances both IR and electrical operation.

Abstract: New skutterudite phases including Ru.sub.0.5 Pd.sub.0.5 Sb.sub.3, RuSb.sub.2 Te, and FeSb.sub.2 Te, have been prepared having desirable thermoelectric properties. In addition, a novel thermoelectric device has been prepared using skutterudite phase Fe.sub.0.5 Ni.sub.0.5 Sb.sub.3. The skutterudite-type crystal lattice structure of these semiconductor compounds and their enhanced thermoelectric properties results in semiconductor materials which may be used in the fabrication of thermoelectric elements to substantially improve the efficiency of the resulting thermoelectric device. Semiconductor materials having the desired skutterudite-type crystal lattice structure may be prepared in accordance with the present invention by using powder metallurgy techniques. Measurements of electrical and thermal transport properties of selected semiconductor materials prepared in accordance with the present invention, demonstrated high Hall mobilities and good Seebeck coefficients.

Abstract: Thermoelectric material contains one or more than one element selected from the transition metals and the rare earth metals, and the element promotes the amorphous phase in the thermoelectric material so as to increase the figure of merit.

Abstract: A ferroelectric thin film includes lead titanate including La and at least an element which forms a six-coordinate bond with oxygen atoms and which is selected from the group consisting of Mg and Mn. The ferroelectric thin film is imparted with a high c-axis orientation while the film is formed without a polarization process. The ferroelectric thin film is manufactured by the steps of: positioning a MgO single crystal substrate disposed in advance with a foundation platinum electrode by a sputtering method on the surface of a substrate heater, exhausting a chamber, heating the substrate by a substrate heater, letting in sputtering gases Ar and O.sub.2 through a nozzle into the chamber, and maintaining a high degree of vacuum. Then, high frequency electric power is input to a target from a high frequency electric power source to generate plasma, and a film is formed on the substrate. In this way, a ferroelectric thin film containing, for example, ?(1-x).multidot.Pb.sub.1-y La.sub.y Ti.sub.1-y/4 O.sub.3 +x.

Abstract: A thermoelectric semiconductor material is used for thermoelectric conversion in a thermoelectric conversion device. The material comprises a double oxide having one of a normal spinel crystal structure and an inverse spinel crystal structure, the double oxide comprising a composition that is represented by MIn.sub.2 O.sub.4, wherein M represents a metal element that can be changed into a divalent ion.

Abstract: A highly integrated thermal sensor (10) is responsive to radiation having wavelengths within a predetermined band of wavelengths. The sensor, which may be a thermopile, is comprised of a substrate (16) comprised of at least one semiconductor material. The substrate includes at least one active region disposed within a first surface of the substrate. The sensor further includes a plurality of thermally-responsive junctions (HJ, CJ) between dissimilar materials (22, 24) that are disposed within the at least one active region, wherein at least one of the thermally-responsive junctions is a hot junction. The hot junction is thermally isolated from the substrate by being suspended from the substrate on dielectric bridges or, in another embodiment, by a thermally insulating and patterned polymer. In a backside illuminated embodiment of this invention the sensor further includes an optical cavity (26) formed within a second surface of the substrate in registration with the active region.

Abstract: A thermoelectric semiconductor material comprises Si crystal and crystal of metal silicide selected from the group consisting of Fe, Co, Cr, Mn and Ni. It is preferable that the metal silicide is .beta.-FeSi.sub.2. Moreover, the thermoelectric semiconductor material further contains at least one element selected from the group consisting of Vb, VIb, IIIb, VIII, VIIa and VIa in the atomic periodic table as an additive. This element can be used as a dopant. Furthermore, since both the phase of the Si crystal and the phase of the crystal of the metal silicide are changed to be an n-type or a p-type, a thermoelectric characteristics are improved.

Abstract: In a fine structure of a thermoelectric material, fine particles of a material exhibiting Seebeck effect are electrically linked in a loosely contacted state with one another without fusing, having spaces formed at clearances among the fine particles. A method of manufacturing the thermoelectric material comprises a step of compacting fine particles made of a material exhibiting Seebeck effect through a cold pressing. Also, disclosed is a sensor for quantitatively sensing a substance, which comprises a pellet of a powder thermoelectric material, where a temperature difference is generated between two points inside the piece of thermoelectric material. The sensor further includes thermocouples connected to a heater plate (6) and a cooling plate, and a controller which is electrically connected in the loop circuit of the thermocouples for detecting thermoelectric current corresponding to the temperature difference, thereby to control the heating of the heater plate.

Abstract: A P-type thermoelectric material consists essentially of iron disilicide, metallic manganese and metallic aluminium dissolved in or alloyed with the iron disilicide, and silicon oxide and/or aluminum oxide present in the iron disilicide. The manganese is contained in an amount of from 1.67 to 4.1 atomic % with respect to a sum of atoms of iron and silicon constituting the iron disilicide, the metallic manganese and the metallic aluminum taken as 100 atomic %, and the metallic aluminum contained in an amount of from 1.33 to 3.33 atomic % with respect thereto, and a sum of the metallic manganese and the metallic aluminum in an amount of from 4.0 to 5.34 atomic % with respect thereto. The P-type thermoelectric material having such a composition produces a thermoelectromotive force equal to or greater than those of the conventional P-type thermoelectric materials comprised of iron disilicide, and it exhibits a mean resistivity equal to or smaller than that of the N-type thermoelectric material.

Abstract: A high temperature resistant and corrosion resistant thermoelement for a thermocouple formed of a silicon base layer, a conductive thin film of a silicide of a transition metal such as titanium or molybdenum which is stable at temperatures in the range from 800.degree. C. to at least 1000.degree. C., preferably to at least about 1500.degree. C., and an oxygen diffusion limiting silica overlayer, and a method of forming such a thermoelement by depositing a conductive transition metal silicide film over a silicon base layer and heat treating the film in an oxidizing gas atmosphere having a partial pressure of oxidizing gas sufficient to oxidize silicon atoms from the transition metal silicide to form a continuous SiO.sub.2 overlayer, but insufficient to oxidize transition metal atoms from the transition metal silicide, in which silicon atoms from the transition metal silicide layer which are oxidized to form the SiO.sub.2 overlayer are replaced by silicon atoms from the silicon base layer.

Abstract: A thermoelement (leg) of a thermocouple for use in peltier heating or generation of power by the Seebeck effect including a plurality of interleaved films wherein compositions of neighboring films are selected to create Kapitza boundaries between the films such as to reduce thermal conductivity but provide adequate electrical conductivity. The plurality of interleaved films includes a semiductor with suitable doping to establish required extrinsic conductivity and metals having dissimilar lattices such as aluminum and tungsten abutting one another. The practical number of films in the composite to establish the effect is ten. A preferred thickness of the films is less than twenty thousand Angstroms.

Abstract: A ferroelectric material, its fabrication technique, and use as a detector aterial, in a ferroelectric detector array is disclosed. The material is an alloy of essential pure components of Pb.sub.2 (Fe, Nb)O.sub.2 and Pb.sub.2 (Fe, Ta)O.sub.2 each with respective Curie temperatures. An essentially linear relationship is made for mole fraction compositions versus Curie temperatures of each component in the alloy, between the pure mole fractions and respective Curie temperatures of the pure components. A Curie temperature for the composition of Pb.sub.2 (Fe, [Ta.sub.(1-x), Nb.sub.x ])O.sub.6 is determined, where x is the mole fraction of Pb.sub.2 (Fe,Nb)O.sub.2 and 1-x is the mole fraction of Pb.sub.2 (Fe, Ta)O.sub.2, with x having a value greater than zero and less than one.

Abstract: Multijunction thermal converters are formed in an integral multifilm membrane form over a through opening in a nonmagnetic, dielectric substrate. Through the use of conventional photolithographic and etching techniques, very compact, rugged and precise integrated structures are formed to include either single linear elongate heater elements, bifilar or trifilar heater elements, and multijunction thermopiles at reasonable cost. Disposition of the heater element and hot junctions of the thermopiles over a through opening in the substrate, with the cold junctions of the thermopiles disposed over the substrate thickness, enables the heating element to provide a substantially isothermal uniform heating of the thermocouple hot junctions to obtain high thermal efficiency and reduce Thompson and Peltier heating effects. Forming the essential elements into an integrated multifilm membrane also makes possible minimization of interconnections between the elements, and this results in minimized reactance.

Abstract: An intermetallic film thermocouple has an amorphous phase and a Seebeck coefficient above 900 .mu.V/.degree. C. Such thermocouples can be prepared by vapor-depositing an intermetallic and quenching the resulting intermetallic film.

Abstract: A thermoelectric material is provided which consists of an oxide with a perovskite structure, wherein the oxide is of the formula (Ln.sub.1-x A.sub.x).sub.2 MO.sub.4 with 0.01.ltoreq.x.ltoreq.0.05, where Ln is a rare earth element, A is an alkali earth metal element, and M is a transition metal element. The thermoelectric material is particularly useful for Peltier cooling elements to produce low temperatures below room temperature.

Abstract: The disclosure is directed to a method for converting between heat energy and electric energy which is characterized in that a carbon intercalation compound is employed as a thermoelectric material by utilizing a temperature difference in a direction perpendicular to the structure of carbon layers, or a method for producing a light-heat converting material which is characterized in that a thin metallic layer like a translucent mirror is caused to adhere to the inner surface of a light transmissive hollow tube by pyrolytically decomposing at a temperature approximately below 1000.degree. C., with hydrocarbons being introduced into the hollow tube at the rate of a predetermined amount per hour.

Abstract: In a thermoelectric refrigeration material with thermoelectric conversion characteristic, in order to improve crystallinity of a system of bismuth-antimony (Bi-Sb) and thereby to improve the figure of merit Z, bismuth (Bi), antimony (Sb) and silicon monoxide (SiO) are deposited on a substrate at a predetermined rate in a thermally nonequilibrium state by an ICB method so that a thin film crystal having a granular structure including crystal grains of around one micron is obtained. Consequently, the figure of merit Z can be improved by selectively varying the thermal conductivity K which largely depends upon the crystallinity and which is one of elements of the figure of merit Z determining the thermal conversion coefficiency.

Abstract: A thermoelectric semiconductor element is disclosed which is particularly low in toxicity and inexpensive. The element is mainly composed of a complex oxide comprising strontium and titanium. An oxide semiconductor possessing oxygen deficiency is used as the n-type element. According to the invention, as compared with a thermoelectric semiconductor element for thermoelectric cooling using a conventional Bi-Te thermoelectric semiconductor which is particularly toxic due to addition of Se or the like, the toxicity of the n-type semiconductor element part is lowered, and a thermoelectric semiconductor element excellent in performance is obtained.

Abstract: A thermoelectric material can be obtained by co-pulverizing and mixing a material containing at least bismuth and a material containing at least tellurium, without being alloyed by melting, and then molding and sintering. This thermoelectric material has high performance and can be utilized in a variety of fields such as thermoelectric power generation and thermoelectric cooling, a temperature sensor, space development, marine development, and electric power generation in the remote areas. Since metal elements are used as a starting material, the starting material can be easily prepared. Moreover, in the production steps, the thermoelectric material can be produced in a high yield at a low energy consumption level by a simplified manner, without a complicated operation or special apparatus, and its production cost can be decreased.

Abstract: A Seebeck effect thermoelectric cooler, operative at cryogenic temperatures, in which two materials having different Seebeck coefficients are in electrical contact so that current flow thereacross cools the junction. One or both of the materials comprise a metal-insulator transition material characterized by doping, alloying, or other means to be just slightly metallic so that electrical resistance becomes lower at lower temperatures, but the Seebeck coefficient does not decline at lower temperatures, as would be the case if the material were allowed to become fully metal-like.

Abstract: The electric resistor of this invention is comprised of a Si-Ge alloy thin film containing amorphous and microcrystal phases which serve as an electric resistance, thereby keeping the resistance value ratio substantially constant and uninfluenced by frequency changes which range from d.c. to 32 GHz. In addition, the power detector of this invention uses a thermocouple which is made by connecting the conductor film with the above-mentioned alloy thin film having great thermoelectric power. The thermocouple is provided with beam lead electrodes at cold junction areas to thereby produce large temperature differences between the hot and cold junctions, so that the thermocouple is provided with a sufficient thermal gradient to detect very low power with high accuracy.

Abstract: A p-type Fe silicide thermoelectric conversion material comprises an Fe silicide, wherein at least one of Cr and V is substituted for part of Fe in the Fe silicide. The Fe silicide is chemically expressed as Fe.sub.1-x M.sub.x Si.sub.2, wherein the value of x falls within a range of 0.01 to 0.1, and M represents the at least one of Cr and V. Alternatively, at least one of Cr and V, and Mn are substituted for part of Fe in the Fe silicide. In this case, the Fe silicide is chemically expressed as Fe.sub.1-x (M+Mn).sub.x Si.sub.2, wherein the value of x falls within a range of 0.01 to 0.1, where M represents the at least one of Cr and V.

Abstract: A thermocouple cable (10) has a positive and negative thermoelement (14) conforming to the standard emf-temperature specification for type K thermocouples, a sheath (12) and compacted ceramic (16) insulating the thermoelements (14) from each other and from the sheath (12). The sheath comprises an oxidation resistant allow having a thermal coefficient substantially the same as that of the negative thermoelement and a melting point in excess of 1300.degree. C.; the sheath preferably being formed from nickel based alloy, such as a nickel-chromium alloy. The positive and negative thermoelements preferably also comprise nickel-based alloys.

Abstract: A transparent thin film thermocouple and a method of manufacturing comprig a positive element of indium tin oxide (ITO) and a negative element of indium oxide (In.sub.2 O.sub.3) formed on a surface by reactive sputtering with the elements being electrically joined to form a hot junction for conversion of heat into electricity.

Abstract: The electric resistor of this invention is comprised of a Si-Ge alloy thin film containing amorphous and microcrystal phases which serve as an electric resistance, thereby keeping the resistance value ratio substantially constant and uninfluenced by frequency changes which range from d.c. to 32 GHz. In addition, the power detector of this invention uses a thermocouple which is made by connecting the conductor film with the above-mentioned alloy thin film having great thermoelectric power. The thermocouple is provided with beam lead electrodes at cold junction areas to thereby produce large temperature differences between the hot and cold junctions, so that the thermocouple is provided with a sufficient thermal gradient to detect very low power with high accuracy.

Abstract: A temperature difference detecting element utilizing thermoelectromotive force which is generated by a Seebeck effect when temperature gradients are applied to a semiconductive ceramic material. A substrate has a plurality of thermoelements. Each thermoelement comprises a semiconductive ceramic material and a pair of hot-side and cold-side electrodes which are provided on the semiconductive ceramic material with a prescribed spacing, to form a hot junction and a cold junction respectively. A plurality of such hot-side electrodes are arranged on a first region of the substrate to be adjacent to each other, while a plurality of such cold-side electrodes are arranged on a second region of the substrate to be adjacent to each other. The plurality of thermoelements are sequentially connected in series with each other by electrically connecting, for example, the hot-side electrodes of the thermoelements with the cold-side electrodes of those adjacent thereto.

Abstract: Silver, thallium, copper and tellurium-based thermoelectric semiconductor materials, characterized in that they are represented by the general formula (I)Ag.sub.x Cu.sub.y T1Te.sub.1+z (I)wherein, x, y and z verify the ratios:0.55<x<0.75; 0.25<y<0.40 and 0<z<0.10.

Abstract: A thermoelectric cooler device having thermoelectric elements of n and p type semiconductor material arranged in rows and columns between insulating substrates of alumina or beryllia, or ceramic materials having a known emissivity is coated with material(s) having an emissivity substantially lower than that of the thermoelectric cooler. The coating includes a layer of insulating material on at least a portion of the surfaces of the thermoelectric cooler, a layer of diffusion barrier forming material on the insulating layer, and a layer of low emissivity material on the diffusion barrier layer. For example, the insulating layer is silicon dioxide having a thickness of about 10,000 Angstroms, the diffusion barrier layer is titanium tungsten having a thickness of about 400-500 Angstroms, and the low emissivity layer is gold having a thickness of about 1,000 Angstroms.

Abstract: A mineral-insulated metal sheathed cable comprising at least one type K thermoelement and characterized in that the sheath alloy consists essentially of up to about 40 weight-% chromium, up to about 10 weight-% niobium, about 0.5 to about 5.0 weight-% silicon, up to about 0.5 weight-% magnesium, up to about 0.3 weight-% cerium, and the balance nickel.