Group Iv Element Containing (c, Si, Ti, Ge, Zr, Sn, Hf, Pb) Patents (Class 136/239)
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Publication number: 20110100409Abstract: A thermoelectric nano-composite including a thermoelectric matrix; a nano-metal particle; and a nano-thermoelectric material represented by Formula 1: AxMyBz??Formula 1 wherein A includes at least one element of indium, bismuth, or antimony, B includes at least one element of tellurium or selenium (Se), M includes at least one element of gallium, thallium, lead, rubidium, sodium, or lithium, x is greater than 0 and less than or equal to about 4, y is greater than 0 and less than or equal to about 4, and z is greater than 0 and less than or equal to about 3.Type: ApplicationFiled: November 4, 2010Publication date: May 5, 2011Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Hyun-sik KIM, Kyu-hyoung LEE, Sang-mock LEE, Eun-sung LEE, Sang-soo JEE, Xiangshu LI
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Publication number: 20110100411Abstract: The present invention provides nanowires and nanoribbons that are well suited for use in thermoelectric applications. The nanowires and nanoribbons are characterized by a periodic compositional longitudinal modulation. The nanowires are constructed using lithographic techniques from thin semiconductor membranes, or “nanomembranes.Type: ApplicationFiled: January 7, 2011Publication date: May 5, 2011Inventors: Max G. Lagally, Paul G. Evans, Clark S. Riz
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Patent number: 7935883Abstract: A thermoelectric material has a composition expressed by (Fe1-pVp)100-x(Al1-qSiq)x (0.35?p?0.7, 0.01?q?0.7, 20?x?30 atomic %). The thermoelectric material includes a crystal phase having an L21 structure or a crystal phase having a B2 structure as a main phase.Type: GrantFiled: September 4, 2007Date of Patent: May 3, 2011Assignee: Kabushiki Kaisha ToshibaInventors: Shinya Sakurada, Naoki Shutoh
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Publication number: 20110083714Abstract: A thermoelectric generator including a membrane maintained by lateral ends and capable of taking a first shape when its temperature reaches a first threshold and a second shape when its temperature reaches a second threshold greater than the first threshold; and mechanism capable of converting the motions and the deformations of the membrane into electricity.Type: ApplicationFiled: October 12, 2010Publication date: April 14, 2011Applicant: STMicroelectronics (Grenoble) SASInventor: Pierrick Descure
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Patent number: 7872253Abstract: A thermoelectric conversion material includes a superlattice structure produced by laminating a barrier layer containing insulating SrTiO3, and a quantum well layer containing SrTiO3 which has been converted into a semiconductor by doping an n-type impurity therein. The quantum well layer has a thickness 4 times or less the unit lattice thickness of SrTiO3 which has been converted into a semiconductor by doping an n-type impurity therein.Type: GrantFiled: May 11, 2007Date of Patent: January 18, 2011Assignee: National University Corporation Nagoya UniversityInventors: Hiromichi Ohta, Kunihito Koumoto, Yoriko Mune
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Publication number: 20110005564Abstract: Carbon-containing sp3-bonded solid refractory nanocrystalline particles that are each sized no larger than about 100 nanometers have a metal of choice disposed thereabout. A variable potential junction is formed between the metallic coatings and the particles that enables carrier entropy to be efficiently transported from the variable potential junction to the coating.Type: ApplicationFiled: August 20, 2010Publication date: January 13, 2011Applicant: DIMEROND TECHNOLOGIES, INC.Inventor: Dieter M. Gruen
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Publication number: 20110000517Abstract: A thermoelectric device is provided. The thermoelectric device includes first and second electrodes, a first leg, a second leg, and a common electrode. The first leg is disposed on the first electrode and includes one or more first semiconductor pattern and one or more first barrier patterns. The second leg is disposed on the second electrode and includes one or more second semiconductor pattern and one or more second barrier patterns. The common electrode is disposed on the first leg and the second leg. Herein, the first barrier pattern has a lower thermal conductivity than the first semiconductor pattern, and the second barrier pattern has a lower thermal conductivity than the second semiconductor pattern. The first/second barrier pattern has a higher electric conductivity than the first/second semiconductor pattern. The first/second barrier pattern forms an ohmic contact with the first/second semiconductor pattern.Type: ApplicationFiled: December 7, 2009Publication date: January 6, 2011Applicant: Electronics and Telecommunications Research InstituteInventors: Young-Sam Park, Moon-Gyu Jang, Taehyoung Zyung, Younghoon Hyun, Myungsim Jun
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Publication number: 20100319750Abstract: A thermoelectric composite material includes a carbon nanotube structure and an electrically conductive polymer layer. The carbon nanotube structure includes a plurality of carbon nanotubes and spaces. The electrically conductive polymer layer is coated on surfaces of the carbon nanotubes.Type: ApplicationFiled: December 3, 2009Publication date: December 23, 2010Applicants: Tsinghua University, HON HAI PRECISION INDUSTRY CO., LTD.Inventors: Chui-Zhou Meng, Chang-Hong Liu, Shou-Shan Fan
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Publication number: 20100319746Abstract: The invention disclosed herein relates to thermoelectrically-active p-type Zintl phase materials as well as devices utilizing such compounds. Such thermoelectric materials and devices may be used to convert thermal energy into electrical energy, or use electrical energy to produce heat or refrigeration. Embodiments of the invention relate to p-type thermoelectric materials related to the compound Yb14MnSb11.Type: ApplicationFiled: April 19, 2010Publication date: December 23, 2010Applicants: CALIFORNIA INSTITUTE OF TECHNOLOGY, THE REGENTS OF UNIVERSITY OF CALIFORNIAInventors: G. Jeffrey Snyder, Franck Gascoin, Shawna Brown, Susan Kauzlarich
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Patent number: 7851691Abstract: High performance thin film thermoelectric couples and methods of making the same are disclosed. Such couples allow fabrication of at least microwatt to watt-level power supply devices operating at voltages greater than one volt even when activated by only small temperature differences.Type: GrantFiled: September 28, 2007Date of Patent: December 14, 2010Assignee: Battelle Memorial InstituteInventors: John G. DeSteese, Larry C. Olsen, Peter M. Martin
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Patent number: 7851692Abstract: A thermoelectric material has a composition expressed by (TipHfqZr1-p-q)xCoy(Sb1-rSnr)100-x-y (0.1<p?0.3, 0.1<q?0.3, 0.1<r?0.8, 30?x?35 atomic %, and 30?y?35 atomic %), and includes a phase having an MgAgAs crystal structure as a main phase.Type: GrantFiled: August 24, 2007Date of Patent: December 14, 2010Assignee: Kabushiki Kaisha ToshibaInventors: Shinya Sakurada, Naoki Shutoh
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Patent number: 7847179Abstract: A process for producing bulk thermoelectric compositions containing nanoscale inclusions is described. The thermoelectric compositions have a higher figure of merit (ZT) than without the inclusions. The compositions are useful for power generation and in heat pumps for instance.Type: GrantFiled: June 2, 2006Date of Patent: December 7, 2010Assignee: Board of Trustees of Michigan State UniversityInventors: Mercouri G. Kanatzidis, John Androulakis, Joseph R. Sootsman
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Publication number: 20100294327Abstract: Provided are a thermoelectric device using radiant heat as a heat source and a method of fabricating the same. In the thermoelectric device, an anti-reflection layer formed on a heat absorption layer causes as much radiant light as possible to be absorbed by the heat absorption layer without being reflected to the outside so that the radiant heat absorption efficiency can be improved. Also, in the thermoelectric device, an insulating layer formed on a heat dissipation layer and a first reflection layer formed on the insulating layer can prevent external radiant heat from being absorbed by the heat dissipation layer, and as much radiant heat transferred to the heat dissipation layer as possible can be dissipated away from the heat dissipation layer by a second reflection layer thermally connected with the heat dissipation layer so that the radiant heat emission efficiency can be improved.Type: ApplicationFiled: May 4, 2010Publication date: November 25, 2010Applicant: Electronics and Telecommunications Research InstituteInventors: Young Sam PARK, Jung Wook Lim, Moon Gyu Jang
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Patent number: 7807917Abstract: New thermoelectric materials and devices are disclosed for application to high efficiency thermoelectric power generation. New functional materials based on oxides, rare-earth-oxides, rare-earth-nitrides, rare-earth phosphides, copper-rare-earth oxides, silicon-rare-earth-oxides, germanium-rare-earth-oxides and bismuth rare-earth-oxides are disclosed. Addition of nitrogen and phosphorus are disclosed to optimize the oxide material properties for thermoelectric conversion efficiency. New devices based on bulk and multilayer thermoelectric materials are described. New devices based on bulk and multilayer thermoelectric materials using combinations of at least one of thermoelectric and pyroelectric and ferroelectric materials are described. Thermoelectric devices based on vertical pillar and planar architectures are disclosed. The advantage of the planar thermoelectric effect allows utility for large area applications and is scalable for large scale power generation plants.Type: GrantFiled: July 26, 2007Date of Patent: October 5, 2010Assignee: Translucent, Inc.Inventor: Petar B. Atanackovic
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Publication number: 20100236596Abstract: An anisotropically elongated thermoelectric nanocomposite includes a thermoelectric material.Type: ApplicationFiled: August 11, 2009Publication date: September 23, 2010Applicants: SAMSUNG ELECTRONICS CO., LTD., UNIVERSITY OF CALIFORNIA, SAN DIEGOInventors: Sang-mock LEE, Prabhakar BANDARU, Sung-ho JIN
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Publication number: 20100229911Abstract: A long life, low cost, high-temperature, high efficiency thermoelectric module. Preferred embodiments include a two-part (a high temperature part and a cold temperature part) egg-crate and segmented N legs and P legs, with the thermoelectric materials in the three segments chosen for their chemical compatibility or their figure of merit in the various temperature ranges between the hot side and the cold side of the module. The legs include metal meshes partially embedded in thermoelectric segments to help maintain electrical contacts notwithstanding substantial temperature variations. In preferred embodiments a two-part molded egg-crate holds in place and provides insulation and electrical connections for the thermoelectric N legs and P legs. The high temperature part of the egg-crate is comprised of a ceramic material capable of operation at temperatures in excess of 500° C. and the cold temperature part is comprised of a thermoplastic material having very low thermal conductivity.Type: ApplicationFiled: November 12, 2009Publication date: September 16, 2010Inventors: Frederick A. Leavitt, Norbert B. Elsner, John C. Bass, John W. McCoy
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Patent number: 7771626Abstract: The invention provides a novel n-type thermoelectric conversion material which comprises low-toxic and abundant elements, and has excellent heat-resistance, chemical durability and the like, as well as high thermoelectric conversion efficiency, the thermoelectric conversion material comprises a metal oxynitride thermoelectric conversion material which has a composition represented by formula Ti1-xAxOyNz (wherein A is at least one element selected from the group consisting of transition metals of the 4th and 5th periods of the periodic table, and 0?x?0.5, 0.5?y?2.0, 0.01?z?0.6), and has an absolute value of thermoelectric power of at least 30 ?V/K at 500° C. or above, and a novel n-type thermoelectric conversion material, a thermoelectric conversion element and a thermoelectric conversion module comprising the above metal oxynitride can also be provided.Type: GrantFiled: July 3, 2007Date of Patent: August 10, 2010Assignee: National Institute of Advanced Industrial Science and TechnologyInventors: Masashi Mikami, Kimihiro Ozaki, Keizo Kobayashi
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Publication number: 20100193001Abstract: A thermoelectric conversion module (10) comprises a first electrode member (13) arranged on a low temperature side, a second electrode member (14) arranged on a high temperature side, and p-type and n-type thermoelectric elements (11 and 12) arranged between and connected electrically with both the first and second electrode members (13 and 14). The thermoelectric elements (11 and 12) are composed of a thermoelectric material (half-Heusler material) containing an intermetallic compound having an MgAgAs crystal structure as a main phase and have a fracture toughness value K1C of not less than 1.3 MPa·m1/2 and less than 10 MPa·m1/2.Type: ApplicationFiled: June 23, 2008Publication date: August 5, 2010Inventors: Shinsuke Hirono, Masami Okamura, Fumiyuki Kawashima
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Publication number: 20100193004Abstract: The present invention provides thermoelectric conversion devices and production methods thereof. The thermoelectric conversion device includes: a thermoelectric conversion device main body having a ridge portion and/or a vertex portion at which a ridge and/or a vertex have/has been subjected to a chamfering process; and a film covering a surface of the thermoelectric conversion device main body, including the ridge portion and/or the vertex portion thereof.Type: ApplicationFiled: July 22, 2008Publication date: August 5, 2010Applicant: Sumitomo Chemical Company, LimitedInventor: Yuichi Hiroyama
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Publication number: 20100193003Abstract: A thermoelectric device and a method of manufacturing the same are provided. The thermoelectric device may include a nanowire having nanoparticles which are disposed on one of an exterior surface of the nanowire and an interior of the nanowire.Type: ApplicationFiled: July 13, 2009Publication date: August 5, 2010Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Eun-kyung LEE, Byoung-Iyong CHOI, Sang-jin LEE
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Patent number: 7767564Abstract: The present invention is directed to an electrical device that comprises a first and a second fiber having a core of thermoelectric material embedded in an electrically insulating material, and a conductor. The first fiber is doped with a first type of impurity, while the second fiber is doped with a second type of impurity. A conductor is coupled to the first fiber to induce current flow between the first and second fibers.Type: GrantFiled: August 10, 2007Date of Patent: August 3, 2010Assignee: ZT3 Technologies, Inc.Inventor: Biprodas Dutta
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Patent number: 7763791Abstract: A thermoelectric film is disclosed. The thermoelectric film includes a substrate that is substantially electrically non-conductive and flexible and a thermoelectric material that is deposited on at least one surface of the substrate. The thermoelectric film also includes multiple cracks oriented in a predetermined direction.Type: GrantFiled: December 29, 2006Date of Patent: July 27, 2010Assignee: Caterpillar IncInventors: Bao Feng, Andrew McGilvray, Bo Shi
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Publication number: 20100170554Abstract: A thermoelectric conversion module is provided. The thermoelectric conversion module includes a plurality of thermoelectric devices and an electrode for electrically connecting the thermoelectric devices in series, wherein the electrode has a hole section opened to the outside of the electrode and metal which is in liquid state within the used temperature range is stored in the hole section.Type: ApplicationFiled: June 3, 2008Publication date: July 8, 2010Applicant: SUMITOMO CHEMICAL COMPANY, LIMITEDInventor: Yuichi Hiroyama
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Patent number: 7745720Abstract: A thermoelectric material includes a composition represented by the following formula (A): (Tia1Zrb1Hfc1)xNiySn100-x-y??(A) where 0<a1<1, 0<b1<1, 0<c1<1, a1+b1+c1=1, 30?x?35, and 30?y?35. The composition includes at least two MgAgAs crystal phases different in a lattice constant, and, assuming that X-ray diffraction peak intensity from a (422) diffraction plane of a first MgAgAs crystal phase having a smallest lattice constant and X-ray diffraction peak intensity from a (422) diffraction plane of a second MgAgAs crystal phase having a largest lattice constant be I1 and I2, respectively, a value of I1/(I1+I2) is in a range of 0.2 to 0.8.Type: GrantFiled: March 24, 2005Date of Patent: June 29, 2010Assignees: Kabushiki Kaisha Toshiba, Toshiba Materials Co., Ltd.Inventors: Shinya Sakurada, Naoki Shutoh, Shinsuke Hirono
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Publication number: 20100147352Abstract: The present invention provides a thermoelectric material and a method of manufacturing it. The thermoelectric material contains a half-Heusler compound including a composition represented by: (Ti1-aAa)1+x(Ni1-bBb)1+y(Sn1-cCc) where 0?a<0.1, 0?b<0.1 and 0?c<0.1; ?0.1?x?0.2 and 0<y?0.2; A is one or more elements selected from the group consisting of group IIIa elements, group IVa elements (excluding Ti), group Va elements and rare earth elements; B is one or more elements selected from the group consisting of group VIIIa elements (excluding Ni) and group Ib elements; and C is one or more elements selected from the group consisting of group IIIb elements, group IVb elements (excluding Sn) and group Vb elements, wherein amounts of Zr substitution and Hf substitution at Ti sites of the half-Heusler compound are less than 1 at %, respectively.Type: ApplicationFiled: December 10, 2009Publication date: June 17, 2010Applicant: KABUSHIKI KAISHA TOYOTA CHUO KENKYUSHOInventors: Masato Matsubara, Hirofumi Hazama, Ryoji Asahi
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Publication number: 20100139730Abstract: The invention relates to the use of a thermoelectric material for thermoelectric purposes at a temperature of 150 K or less, said thermoelectric material is a material corresponding to the stoichiometric formula FeSb2, wherein all or part of the Fe atoms optionally being substituted by one or more elements selected from the group comprising: Sc, Ti, V, Cr, Mn, Co, Ni, Cu, Zn, Y, Zr, Nb, Mo, Tc, Ru, Rh, Pd, Ag, Cd, La, Hf, Ta, W, Re, Os, Tr, Pt, Au, Hg, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu and a vacancy; and wherein all or part of the Sb atoms optionally being substituted by one or more elements selected from the group comprising: P, As, Bi, S, Se, Te, B, Al, Ga, In, Tl, C, Si, Ge, Sn, Pb and a vacancy; with the proviso that neither one of the elements Fe and Sb in the formula FeSb2 is fully substituted with a vacancy, characterised in that said thermoelectric material exhibits a power factor (S2?) of 25 ?W/cmK2 or more at a temperature of 150 K or less.Type: ApplicationFiled: December 4, 2007Publication date: June 10, 2010Applicants: AARHUS UNIVERSITET, Max-Planckgesellschaft Zur Forderung der Wissenschaften E.V.Inventors: Anders Bentien, Simon Johnsen, Georg Kent Hellerup Madsen, Bo Brummerstedt Iversen, Frank Steglich
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Patent number: 7732704Abstract: The present invention provides an electrically conductive paste for connecting thermoelectric materials, the paste comprising a specific powdery oxide and at least one powdery electrically conductive metal selected from the group consisting of gold, silver, platinum, and alloys containing at least one of these metals. By connecting a thermoelectric material to an electrically conductive substrate with the electrically conductive paste of the invention, a suitable electroconductivity is imparted to the connecting portion of the thermoelectric element. Further, the thermal expansion coefficient of the connecting portion can be made close to that of the thermoelectric material. Therefore, even when high-temperature power generation is repeated, separation at the connecting portion is prevented and a favorable thermoelectric performance can be maintained.Type: GrantFiled: September 29, 2004Date of Patent: June 8, 2010Assignee: National Institute of Advanced Industrial Science and TechnologyInventor: Ryoji Funahashi
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Publication number: 20100126548Abstract: Provided are a thermoelectric device, a thermoelectric device module, and a method of forming the thermoelectric device. The thermoelectric device includes a first conductive type first semiconductor nanowire including at least one first barrier region; a second conductive type second semiconductor nanowire including at least one second barrier region; a first electrode connected to one end of the first semiconductor nanowire; a second electrode connected to one end of the second semiconductor nanowire; and a common electrode connected to the other end of the first semiconductor nanowire and the other end of the second semiconductor nanowire. The first barrier region is greater than the first semiconductor nanowire in thermal conductivity, and the second barrier region is greater than the second semiconductor nanowire in thermal conductivity.Type: ApplicationFiled: July 16, 2009Publication date: May 27, 2010Inventors: Moon-Gyu JANG, Myung-Sim JUN, Tae-Moon ROH, Jong-Dae KIM, Tae-Hyoung ZYUNG
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Publication number: 20100116309Abstract: Disclosed herein is a thermoelectric material for intermediate- and low-temperature applications, in which any one or a mixture of two or more selected from among La, Sc and MM is added to a Ag-containing metallic thermoelectric material or semiconductor thermoelectric material. The thermoelectric material has a low thermal diffusivity, a high Seebeck coefficient, a low specific resistivity, a high power factor and a low thermal conductivity, and thus has a high dimensionless figure of merit, thus showing very excellent thermoelectric properties. The thermoelectric material provide thermoelectric sensors having high sensitivity and low noise and, in addition, is widely used as a thermoelectric material for intermediate- and low-temperature applications, because it shows excellent thermoelectric performance in the intermediate- and low-temperature range.Type: ApplicationFiled: December 26, 2008Publication date: May 13, 2010Applicant: Korea Electrotechnology Research InstituteInventors: Su Dong Park, Hee Woong Lee, Bong Seo Kim, Min Wook Oh
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Publication number: 20100108116Abstract: A first concept is directed to an improved dye-sensitized solar cell (DSSC). In a first embodiment, photo energy conversion efficiency (PCE) is increased by employing a reflective layer disposed underneath the DSSC device to direct light that would otherwise be wasted back into the DSSC device. In a second embodiment, the PCE of a DSSC is increased by adding an additional dye, which exhibits significant absorption in the red and near-IR regions. A novel phthalocyanine derivative has been developed that absorbs well in the red and near IR-regions, readily couples to the titanium oxide semiconductor in the DSSC, and enables the DSSC device to exhibit a high photo-current efficiency. A second concept is directed to novel thermoelectric materials formed from a mechanical alloy of silicon and at least one other periodic element, wherein the mechanical alloy is fused together using spark plasma sintering.Type: ApplicationFiled: August 3, 2009Publication date: May 6, 2010Applicant: University of WashingtonInventors: Minoru Taya, Hee Seok Kim, Miseon Choi, Morio Nagata
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Publication number: 20100051079Abstract: The invention provides for a thermoelectric system comprising a substrate comprising a first complex oxide, wherein the substrate is optionally embedded with a second complex oxide. The thermoelectric system can be used for thermoelectric power generation or thermoelectric cooling.Type: ApplicationFiled: August 11, 2009Publication date: March 4, 2010Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIAInventors: Arunava Majumdar, Ramamoorthy Ramesh, Choongho Yu, Matthew L. Scullin, Mark Huijben
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Publication number: 20100051080Abstract: A thermoelectric material is disclosed. The thermoelectric material is represented by the following formula; (A1-aA?a)4-x(B1-bB?b)3-y. A is a Group XIII element and A? may be a Group XIII element, a Group XIV element, a rare earth element, a transition metal, or combinations thereof. A and A? are different from each other. B may be S, Se, Te and B? may be a Groups XIV, XV, XVI or combinations thereof. B and B? are different from each other. a is equal to or larger than 0 and less than 1. b is equal to or larger than 0 and less than 1. x is between ?1 and 1 and wherein y is between ?1 and 1.Type: ApplicationFiled: July 20, 2009Publication date: March 4, 2010Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Jong-soo RHYEE, Sang-mock LEE
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Patent number: 7663054Abstract: Disclosed is a thermoelectric material comprising a main phase which is represented by the following composition formula and having an MgAgAs-type crystalline structure: (Ta1Zrb1Hfc1)xCoySb100-x-y wherein 0<a1<1, 0<b1<1, 0<c1<1, a1+b1+c1=1, 30?x ?35, and 30?y?35.Type: GrantFiled: October 6, 2004Date of Patent: February 16, 2010Assignee: Kabushiki Kaisha ToshibaInventors: Naoki Shutoh, Shinya Sakurada, Naruhito Kondo, Osamu Tsuneoka
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Patent number: 7648552Abstract: A low-cost filled skutterudite for advanced thermoelectric applications is disclosed. The filled skutterudite uses the relatively low-cost mischmetal, either alone or in addition to rare earth elements, as a starting material for guest or filler atoms.Type: GrantFiled: November 1, 2004Date of Patent: January 19, 2010Assignee: GM Global Technology Operations, Inc.Inventors: Jihui Yang, Gregory P. Meisner
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Patent number: 7649139Abstract: The present invention provides a thermoelectric element in which a thin film of p-type thermoelectric material and a thin film of n-type thermoelectric material, which are formed on an electrically insulating substrate, are electrically connected, in which the p-type thermoelectric material and the n-type thermoelectric material are selected from specific complex oxides with a positive Seebeck coefficient and specific complex oxides with a negative Seebeck coefficient, respectively. The present invention also provides a thermoelectric module using the thermoelectric element(s) and a thermoelectric conversion method. In the thermoelectric element of the present invention, since a p-type thermoelectric material and an n-type thermoelectric material are formed into a thin film on an electrically insulating substrate, the thermoelectric element of the invention can be formed on substrates having various shapes, thereby providing thermoelectric elements having various shapes.Type: GrantFiled: March 22, 2005Date of Patent: January 19, 2010Assignee: National Institute of Advanced Industrial Science and TechnologyInventors: Toshiyuki Mihara, Ryoji Funahashi, Jun Akedo, Sou Baba, Masashi Mikami
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Patent number: 7592535Abstract: A thermoelectric material of the general formula Ag1?XMmM?Q2+m, wherein M is selected from the group consisting of Pb, Sn, Ca, Sr, Ba, divalent transition metals, and combinations thereof; M? is selected from the group consisting of Bi, Sb, and combinations thereof; Q is selected from the group consisting of Se, Te, S, and combinations thereof; 8?m?24; and 0.01?x?0.7. In embodiments of the invention, the compositions exhibit n-type semiconductor properties. In preferred embodiments, x is from 0.1 to 0.3, and m is from 10 to 18. The compositions may be synthesized by adding stoichiometric amounts of starting materials comprising Ag, M, M?, and Q to a reaction vessel, heating the starting materials to a temperature and for a period of time sufficient to melt the materials, and cooling the reaction product at a controlled rate of cooling.Type: GrantFiled: August 25, 2004Date of Patent: September 22, 2009Assignee: Board of Trustees operating Michingan State UniversityInventors: Mercouri Kanatzidis, Kuei-Fang Hsu
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Publication number: 20090229647Abstract: A thermoelectric material of the p-type having the stoichiometric formula Zn4Sb3, wherein part of the Zn atoms optionally being substituted by one or more elements selected from the group comprising Sn, Mg, Pb and the transition metals in a total amount of 20 mol % or less in relation to the Zn atoms is provided by a process involving zone-melting of a an arrangement comprising an interphase between a “stoichiometric” material having the desired composition and a “non-stoichiometric” material having a composition deviating from the desired composition. The thermoelectric materials obtained exhibit excellent figure of merits.Type: ApplicationFiled: May 31, 2006Publication date: September 17, 2009Inventors: Bo Brummerstedt Iversen, Britta Lundtoft, Mogens Christensen, Dieter Platzek
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Patent number: 7586033Abstract: The present invention generally relates to binary or higher order semiconductor nanoparticles doped with a metallic element, and thermoelectric compositions incorporating such nanoparticles. In one aspect, the present invention provides a thermoelectric composition comprising a plurality of nanoparticles each of which includes an alloy matrix formed of a Group IV element and Group VI element and a metallic dopant distributed within the matrix.Type: GrantFiled: May 3, 2005Date of Patent: September 8, 2009Assignees: Massachusetts Institute of Technology, The Trustees of Boston CollegeInventors: Zhifeng Ren, Gang Chen, Bed Poudel, Shankar Kumar, Wenzhong Wang, Mildred Dresselhaus
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Publication number: 20090205694Abstract: A thermoelectric generation device is configured for mounting on cooling tubes of a heat exchanger of a computer room air conditioning unit in a data center. A first type of Seebeck material and a second type of Seebeck material are arranged in a matrix and connected in series. An electrically insulating, but thermally conducting plate is located on either side of the device. The device is mounted physically on cooling tubes of the heat exchanger and exposed on the other side to the warm air environment. As a result of the temperature difference a voltage is generated that may be used to power an electrical load connected thereto.Type: ApplicationFiled: February 19, 2008Publication date: August 20, 2009Inventors: Cary M. Huettner, Joseph Kuczynski, Robert E. Meyer, III, Timothy J. Tofil
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Publication number: 20090205695Abstract: An improved design for maintaining nanometer separation between electrodes in tunneling, thermo-tunneling, diode, thermionic, thermoelectric, thermo-photovoltaic and other devices is disclosed. At least one electrode is of a curved shape. All embodiments reduce the thermal conduction between the two electrodes when compared to the prior art. Some embodiments provide a large tunneling area surrounding a small contact area. Other embodiments remove the contact area completely. The end result is an electronic device that maintains two closely spaced parallel electrodes in stable equilibrium with a nanometer gap there-between over a large area in a simple configuration for simplified manufacturability and use to convert heat to electricity or electricity to cooling.Type: ApplicationFiled: February 9, 2009Publication date: August 20, 2009Applicant: TEMPRONICS, INC.Inventor: Tarek Makansi
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Publication number: 20090199887Abstract: A method of forming a thermoelectric device may include forming a first pattern of epitaxial thermoelectric elements of a first conductivity type on a surface of a semiconductor substrate. A second pattern of epitaxial thermoelectric elements of a second conductivity type may be formed on the surface of the semiconductor substrate. Moreover, the thermoelectric elements of the first and second patterns may be spaced apart, and the first and second conductivity types may be different. Related structures are also discussed.Type: ApplicationFiled: February 6, 2009Publication date: August 13, 2009Inventors: Mark Johnson, Lauren Jackson, Robert Vaudo, James Mundell
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Patent number: 7569763Abstract: A solid-state energy converter with a semiconductor or semiconductor-metal implementation is provided for conversion of thermal energy to electric energy, or electric energy to refrigeration. In n-type heat-to-electricity embodiments, a highly doped n* emitter region made of a metal or semiconductor injects carriers into an n-type gap region. A p-type layer is positioned between the emitter region and gap region, allowing for discontinuity of corresponding Fermi-levels and forming a potential barrier to sort electrons by energy. Additional p-type layers can optionally be formed on the collector side of the converter. One type of these layers with higher carrier concentration (p*) serves as a blocking layer at the cold side of the converter, and another layer (p**) with carrier concentration close to the gap reduces a thermoelectric back flow component. Ohmic contacts on both sides of the device close the electrical circuit through an external load to convert heat to electricity.Type: GrantFiled: September 13, 2006Date of Patent: August 4, 2009Assignee: Micropower Global LimitedInventors: Yan R. Kucherov, Peter L. Hagelstein
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Publication number: 20090188542Abstract: A thermoelectric module 11 includes support substrates 1a and 1b, the same numbers of N-type thermoelectric elements 2a and P-type thermoelectric elements 2b disposed on the support substrates 1a and 1b, wiring conductors 3a and 3b that electrically connect between the thermoelectric elements in series and an external connection terminal 4 electrically connected to the wiring conductor 3a. The N-type thermoelectric elements 2a and the P-type thermoelectric elements 2b have different values of resistivity.Type: ApplicationFiled: March 6, 2009Publication date: July 30, 2009Applicant: KYOCERA CORPORATIONInventors: Kenichi TAJIMA, Koichi TANAKA
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Patent number: 7559215Abstract: The present invention provides a method of drawing a thermoelectrically active material in a glass cladding, comprising sealing off one end of a glass tube such that the tube has an open end and a closed end, introducing the thermoelectrically active material inside the glass tube and evacuating the tube by attaching the open end to a vacuum pump, heating a portion of the glass tube such that the glass partially melts and collapses under the vacuum such that the partially melted glass tube provides an ampoule containing the thermoelectric material to be used in a first drawing operation, introducing the ampoule containing the thermoelectric material into a heating device, increasing the temperature within the heating device such that the glass tube melts just enough for it to be drawn and drawing fibers of glass clad thermoelectrically active material.Type: GrantFiled: December 9, 2005Date of Patent: July 14, 2009Assignee: ZT3 Technologies, Inc.Inventors: Biprodas Dutta, Ian L. Pegg, Robert K. Mohr, Jugdersuren Battogtokh
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Publication number: 20090173932Abstract: A thermoelectric conversion material includes a superlattice structure produced by laminating a barrier layer containing insulating SrTiO3, and a quantum well layer containing SrTiO3 which has been converted into a semiconductor by doping an n-type impurity therein. The quantum well layer has a thickness 4 times or less the unit lattice thickness of SrTiO3 which has been converted into a semiconductor by doping an n-type impurity therein.Type: ApplicationFiled: May 11, 2007Publication date: July 9, 2009Applicant: National University Corporation Nagoya UniversityInventors: Hiromichi Ohta, Kunihito Koumoto, Yoriko Mune
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Patent number: 7554029Abstract: The present invention provides a novel complex oxide capable of achieving high performance as a p-type thermoelectric material. The complex oxide comprises a layer-structured oxide represented by the formula BiaPbbM1cCOdM2eOf wherein M1 is one or more elements selected from the group consisting of Na, K, Li, Ti, V, Cr, Mn, Fe, Ni, Cu, Zn, Pb, Ca, Sr, Ba, Al, Y, and lanthanoids; M2 is one or more elements selected from the group consisting of Ti, V, Cr, Mn, Fe, Ni, Cu, Mo, W, Nb, Ta, and Ag; 1.8?a?2.5; 0?b?0.5; 1.8?c?2.5; 1.6?d?2.5; 0?e?0.5; and 8?f?10; and at least one interlayer component selected from the group consisting of F, Cl, Br, I, HgF2, HgCl2, HgBr2, HgI2, TlF3, TlCl3, TlBr3, TlI3, BiF3, BiCl3, BiBr3, BiI3, PbF2, PbCl2, PbBr2, and PbI2. The interlayer component being present between layers of the layer-structured oxide.Type: GrantFiled: August 18, 2005Date of Patent: June 30, 2009Assignee: National Institute of Advanced Industrial Science and TechnologyInventors: Ryoji Funahashi, Emmanuel Guilmeau
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Patent number: 7530239Abstract: The present invention provides a method of drawing nanowires, comprising sealing off one end of a glass tube such that the tube has an open end and a closed end, introducing a nanowire material inside the glass tube and evacuating the tube by attaching the open end to a vacuum pump, heating a portion of the glass tube such that the glass partially melts under the vacuum such that the partially melted glass tube provides an ampoule containing the nanowire material to be used in a first drawing operation, introducing the ampoule containing the nanowire material into a heating device, increasing the temperature within the heating device such that the glass tube melts just enough for it to be drawn and drawing fibers of glass clad nanowire material. The invention further provides a method for bunching together such fibers and redrawing them one or more times to produce arrays of nanowires clad in glass.Type: GrantFiled: July 12, 2007Date of Patent: May 12, 2009Assignee: ZT3 Technologies, Inc.Inventors: Biprodas Dutta, Ian L. Pegg, Robert K. Mohr, Jugdersuren Battogtokh
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Publication number: 20090072078Abstract: A new High Altitude Airship (HAA) capable of various extended applications and mission scenarios utilizing inventive onboard energy harvesting and power distribution systems. The power technology comprises an advanced thermoelectric (ATE) thermal energy conversion system. The high efficiency of multiple stages of ATE materials in a tandem mode, each suited for best performance within a particular temperature range, permits the ATE system to generate a high quantity of harvested energy for the extended mission scenarios. When the figure of merit 5 is considered, the cascaded efficiency of the three-stage ATE system approaches an efficiency greater than 60 percent.Type: ApplicationFiled: July 31, 2007Publication date: March 19, 2009Applicants: Space AdministrationInventors: Sang H. Choi, James R. Elliott, JR., Glen C. King, Yeonjoon Park, Jae-Woo Kim, Sang-Hyon Chu
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Publication number: 20090025774Abstract: The invention relates to a thermoelectric means (60) that can be woven or knitted, taking the form of an elongate body and having on its surface at least one converter for converting thermal energy into electrical energy. The invention also relates to a structure for converting a temperature difference over the thickness of the structure into electricity, which consists of an assembly formed by the interlacement of textile fibers (8), of said thermoelectric means (60) and of connection means (7).Type: ApplicationFiled: July 22, 2008Publication date: January 29, 2009Inventors: Marc Plissonnier, Yannick Breton, Isabelle Chartier, Thierry Lanier, Christelle Navone
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Patent number: 7465871Abstract: The present invention is generally directed to nanocomposite thermoelectric materials that exhibit enhanced thermoelectric properties. The nanocomposite materials include two or more components, with at least one of the components forming nano-sized structures within the composite material. The components are chosen such that thermal conductivity of the composite is decreased without substantially diminishing the composite's electrical conductivity. Suitable component materials exhibit similar electronic band structures. For example, a band-edge gap between at least one of a conduction band or a valence band of one component material and a corresponding band of the other component material at interfaces between the components can be less than about 5kBT, wherein kB is the Boltzman constant and T is an average temperature of said nanocomposite composition.Type: GrantFiled: October 29, 2004Date of Patent: December 16, 2008Assignees: Massachusetts Institute of Technology, The Trustees of Boston CollegeInventors: Gang Chen, Zhifeng Ren, Mildred Dresselhaus