Abstract: An optical transducer, optoelectronic device, and semiconductor are disclosed. An illustrative optical transducer is disclosed to include a plurality of p-n stacks, where each p-n stack comprises at least a p-layer and an n-layer, and formed therein a built-in photovoltage between the p-layer and the n-layer. The p-layers and n-layers are disclosed to have substantially the same n-type material in substantially the same composition such that each p-n stack in the plurality of p-n stacks has a substantially similar built-in photovoltage. The optical transducer is further disclosed to include a plurality of connecting layers, each connecting layer in the plurality of connecting layers being sandwiched between two adjacent p-n stacks for electrically connecting the two adjacent p-n stacks. The p-n stacks in the plurality of p-n stacks may be arranged such that the built-in photovoltage of each p-n stack additively contributes to an overall electric potential of the transducer.

Abstract: An embodiment includes an apparatus comprising: a first photovoltaic cell; a first through silicon via (TSV) included in the first photovoltaic cell and passing through at least a portion of a doped silicon substrate, the first TSV comprising (a)(i) a first sidewall, which is doped oppositely to the doped silicon substrate, and (a)(ii) a first contact substantially filling the first TSV; and a second TSV included in the first photovoltaic cell and passing through at least another portion of the doped silicon substrate, the second TSV comprising (b)(i) a second sidewall, which comprises the doped silicon substrate, and (b)(ii) a second contact substantially filling the second TSV; wherein the first and second contacts each include a conductive material that is substantially transparent. Other embodiments are described herein.

Abstract: A method for forming a multi-junction photovoltaic device includes providing a germanium layer and etching pyramidal shapes in the germanium layer such that (111) facets are exposed to form a textured surface. A first p-n junction is formed on or over the textured surface from III-V semiconductor materials. Another p-n junction is formed over the first p-n junction from III-V semiconductor materials and follows the textured surface.

Abstract: A thin film amorphous silicon solar cell may have front contact between a hydrogenated amorphous silicon layer and a transparent conductive oxide layer. The cell may include a layer of a refractory metal, chosen among the group composed of molybdenum, tungsten, tantalum and titanium, of thickness adapted to ensure a light transmittance of at least 80%, interposed therebetween, before growing by PECVD a hydrogenated amorphous silicon p-i-n light absorption layer over it. A refractory metal layer of just about 1 nm thickness may effectively shield the oxide from the reactive plasma, thereby preventing a diffused defect when forming the p.i.n. layer that would favor recombination of light-generated charge carriers.

Abstract: A photovoltaic sensor array for detecting variations in light intensity is disclosed. The array has a plurality of photo voltaic cells which are electrically independent from one another and formed on a common substrate. Each cell has corresponding positive and negative electrical connections and each cell is arranged to detect light intensity so that variations in light intensity between the cells can be obtained.

Abstract: A photoelectrode, methods of making and using, including systems for water-splitting are provided. The photoelectrode can be a semiconducting material having a photocatalyst such as nickel or nickel-molybdenum coated on the material. The photoelectrode includes an elongated axially integrated wire having at least two different wire compositions.

Abstract: A method of disordering a layer of an optoelectronic device including; growing a plurality of lower layers; introducing an isoelectronic surfactant; growing a layer; allowing the surfactant to desorb; and growing subsequent layers all performed at a low pressure of 25 torr.

Abstract: Photon absorption, and thus current generation, is hindered in conventional thin-film solar cell designs, including quantum well structures, by the limited path length of incident light passing vertically through the device. Optical scattering into lateral waveguide structures provides a physical mechanism to increase photocurrent generation through in-plane light trapping. However, the insertion of wells of high refractive index material with lower energy gap into the device structure often results in lower voltage operation, and hence lower photovoltaic power conversion efficiency. The voltage output of an InGaAs quantum well waveguide photovoltaic device can be increased by employing a III-V material structure with an extended wide band gap emitter heterojunction.

Abstract: A solar panel of the present invention includes a plurality of solar cells arranged in a substantially circular shape, and a plurality of connection sections which are provided near a center portion where the plurality of solar cells are all close to each other, and electrically connect the plurality of solar cells. Therefore, the plurality of connection sections can be centrally placed near the center portion where the plurality of solar cells are all close to each other. As a result, a decrease in the light-receiving area due to the plurality of connection sections can be reduced, and fluctuations in the light-receiving area due to pointers moving over the solar cells can be reduced.

Abstract: A stacked optocoupler component, having a transmitter component with a transmitting area and a receiver component with a receiving area and a plate-shaped electrical isolator. The isolator is formed between the transmitter component and the receiver component, and the transmitter component and the receiver component and the isolator are arranged one on top of another in the form of a stack. The transmitter component and the receiver component are galvanically separated from one another but optically coupled to one another. The isolator is transparent for the emission wavelengths of the transmitter component and the centroidal axis of the transmitting area and the centroidal axis of the receiving area are substantially or precisely parallel to one another.

Abstract: A timepiece has a solar panel including a plurality of solar cells; a dial disposed on the face side of the solar panel and configured to transmit a light; a molding member disposed to the face side of the dial overlapping the outside edge of the dial when seen from the face side of the timepiece; and an opaque light shield disposed on the face side of the dial on the inside side of the molding member; the solar panel having connectors that connect adjacent solar cells in series, and at least part of each connector is covered by the light shield when seen from the face.

Abstract: A method is provided for converting optical energy to electrical energy in a spectrally adaptive manner. The method begins by directing optical energy into a first photovoltaic module that includes non-single crystalline semiconductor layers defining a junction such that a first spectral portion of the optical energy is converted into a first quantity of electrical energy. A second spectral portion of the optical energy unabsorbed by the first module is absorbed by a second photovoltaic module that includes non-single crystalline semiconductor layers defining a junction and converted into a second quantity of electrical energy. The first quantity of electrical energy is conducted from the first module to a first external electrical circuit along a first path. The second quantity of electrical energy is conducted from the second module to a second external electrical circuit along a second path that is in parallel with the first path.

Abstract: Methods of fabricating solar cells using a metal-containing thermal and diffusion barrier layer in foil-based metallization approaches, and the resulting solar cells, are described. For example, a method of fabricating a solar cell includes forming a plurality of semiconductor regions in or above a substrate. The method also includes forming a metal-containing thermal and diffusion barrier layer above the plurality of semiconductor regions. The method also includes forming a metal seed layer on the metal-containing thermal and diffusion barrier layer. The method also includes forming a metal conductor layer on the metal seed layer. The method also includes laser welding the metal conductor layer to the metal seed layer. The metal-containing thermal and diffusion barrier layer protects the plurality of semiconductor regions during the laser welding.

Abstract: Methods and systems for a silicon-based optical phase modulator with high modal overlap are disclosed and may include, in an optical modulator having a rib waveguide in which a cross-shaped depletion region separates four alternately doped sections: receiving an optical signal at one end of the optical modulator, modulating the received optical signal by applying a modulating voltage, and communicating a modulated optical signal out of an opposite end of the modulator. The modulator may be in a silicon photonically-enabled integrated circuit which may be in a complementary-metal oxide semiconductor (CMOS) die. An optical mode may be centered on the cross-shaped depletion region. The four alternately doped sections may include: a shallow depth p-region, a shallow depth n-region, a deep p-region, and a deep n-region. The shallow depth p-region may be electrically coupled to the deep p-region periodically along the length of the modulator.

Abstract: A light emitting semiconductor device (401) has an active region (405) formed of Bismuth (Bi) and one or more other group V elements. In a particular embodiment the III-V material comprises Gallium Arsenide (GaAs) in addition to Bismuth. The inclusion of Bismuth in the III-V material raises the spin-orbit splitting energy of the material while reducing the band gap. When the spin-orbit splitting energy exceeds the band gap, Auger recombination processes are inhibited, reducing the sensitivity of the light emitting semiconductor device (401) to changes in ambient temperature.

Abstract: To provide a liquid crystal display device suitable for a thin film transistor which uses an oxide semiconductor. In a liquid crystal display device which includes a thin film transistor including an oxide semiconductor layer, a film having a function of attenuating the intensity of transmitting visible light is used as an interlayer film which covers at least the oxide semiconductor layer. As the film having a function of attenuating the intensity of transmitting visible light, a coloring layer can be used and a light-transmitting chromatic color resin layer is preferably used. An interlayer film which includes a light-transmitting chromatic color resin layer and a light-blocking layer may be formed in order that the light-blocking layer is used as a film having a function of attenuating the intensity of transmitting visible light.

Abstract: A conjugated polymer layer with a built-in diode is formed by providing a first metal-chalcogenide layer over a bottom electrode. Subsequently, a second metal-chalcogenide layer is provided over and in contact with the first metal-chalcogenide layer. The first metal-chalcogenide layer has a first conductivity type and the second metal-chalcogenide layer has a second conductivity type. The plane of contact between the first and second metal-chalcogenide layers creates the p-n junction of the built-in diode. Then a polymer layer is selectively deposited on the second metal-chalcogenide layer. The second metal-chalcogenide layer provides ions to the polymer layer to change its resistivity. A top electrode is then provided over the polymer layer. An exemplary memory cell may have the following stacked structure: first electrode/n-type semiconductor/p-type semiconductor/conjugated polymer/second electrode.

Abstract: Manufacture of multi junction solar cells, and devices thereof, are disclosed. The architectures are also adapted to provide for a more uniform and consistent fabrication of the solar cell structures, leading to improved yields, greater efficiency, and lower costs. Certain solar cells may be from a different manufacturing processes and further include one or more compositional gradients of one or more semiconductor elements in one or more semiconductor layers, resulting in a more optimal solar cell device.

Abstract: Disclosed are a solar cell and a method of fabricating the same. The solar cell includes a first back electrode layer on a support substrate; a second back electrode layer on the first back electrode layer; a light absorbing layer on the second back electrode layer; and a front electrode layer on the light absorbing layer.

Abstract: Device structures, apparatuses, and methods are disclosed for photovoltaic cells that may be a single junction or multijunction solar cells, with at least a first layer comprising a group-IV semiconductor in which part of the cell comprises a second layer comprising a III-V semiconductor or group-IV semiconductor having a different composition than the group-IV semiconductor of the first layer, such that a heterostructure is formed between the first and second layers.

Abstract: A solar cell has a condenser lens and a solar cell element, the solar cell element including an n-type InGaAs layer, an n-type GaAs layer, an n-type InGaP layer, the first InGaAs peripheral part having a thickness (d2), and a width (w2), the second InGaAs peripheral part having a thickness (d3), and a width (w3), the first GaAs peripheral part having a thickness (d5), and a width (w4), the second GaAs peripheral part a thickness (d6), and a width (w5), the first InGaP peripheral part having a thickness (d8), and a width (w6), the second InGaP peripheral part having a thickness (d9), and a width (w7), the following inequation set being satisfied: 1 nm?(d2, d3, d5, and d6)?4 nm, 1 nm?(d8 and d9)?5 nm, 100 nm?(w2, w3, w4, w5, w6, and w7), the InGaAs center part having a thickness (w1), a window layer has a range S irradiated by sunlight having a width (w8); w8?w1.

Abstract: A method for fabricating a device with integrated photovoltaic cells includes supporting a semiconductor substrate on a first handle substrate and doping the semiconductor substrate to form doped alternating regions with opposite conductivity. A doped layer is formed over a first side the semiconductor substrate. A conductive material is patterned over the doped layer to form conductive islands such that the conductive islands are aligned with the alternating regions to define a plurality of photovoltaic cells connected in series on a monolithic structure.

Abstract: A solar cell and a method for manufacturing the same are disclosed. The solar cell includes a first conductive type substrate, an emitter layer of a second conductive type opposite the first conductive type, the emitter layer and the substrate forming a p-n junction, a plurality of first electrodes electrically connected to the emitter layer, and a second electrode electrically connected to the substrate. At least one of the plurality of first electrodes includes a first electrode layer, a plurality of first electrode auxiliaries separated from the first electrode layer, and a second electrode layer positioned on an upper surface and a lateral surface of the first electrode layer and on an upper surface and a lateral surface of each of the plurality of first electrode auxiliaries.

Abstract: Methods for forming a photovoltaic device include forming a buffer layer between a transparent electrode and a p-type layer. The buffer layer includes a doped germanium-free silicon base material. The buffer layer has a work function that falls within barrier energies of the transparent electrode and the p-type layer. An intrinsic layer and an n-type layer are formed on the p-type layer. Devices are also provided.

Abstract: An electronic device includes a solar panel including a solar cell, the solar cell including a plurality of light receiving regions and a connecting region, the connecting region having a width narrower than widths of the plurality of light receiving regions and connecting the plurality of light receiving regions, wherein a conductive reinforcing material made of a conductive material is provided in the connecting region and is electrically connected to the plurality of light receiving regions.

Abstract: A photovoltaic device includes a crystalline substrate having a first dopant conductivity, an interdigitated back contact and a front surface field structure. The front surface field structure includes a crystalline layer formed on the substrate and a noncrystalline layer formed on the crystalline layer. The crystalline layer and the noncrystalline layer are doped with dopants having an opposite dopant conductivity from that of the substrate. Methods are also disclosed.

Abstract: An electronic device includes a solar panel including a solar cell, the solar cell including a plurality of light receiving regions and a connecting region, the connecting region having a width narrower than widths of the plurality of light receiving regions and connecting the plurality of light receiving regions, wherein a conductive reinforcing material made of a conductive material is provided in the connecting region and is electrically connected to the plurality of light receiving regions.

Abstract: An electro-optical modulator includes a substrate 201; an optical waveguide formed of a silicon-containing i-type amorphous semiconductor 204 on the substrate; and a silicon-containing p-type semiconductor layer 203 and a silicon-containing n-type semiconductor layer 205 arranged apart from each other with the silicon-containing optical waveguide formed of an i-type amorphous semiconductor 204 interposed therebetween and constituting optical waveguides together with the silicon-containing optical waveguide formed of an i-type amorphous semiconductor. The silicon-containing p-type semiconductor layer 203 and/or silicon-containing n-type semiconductor layer 205 area crystalline semiconductor layer.

Abstract: Disclosed are a solar cell and a method for manufacturing the same. The solar cell includes a substrate, a back electrode layer on the substrate, a light absorbing layer on the back electrode layer, a buffer layer on the light absorbing layer, and a window layer on the buffer layer. The buffer layer is formed through a chemical equation of (AxZn1-x)O(0?x?1), in which the A represents a metallic element.

Abstract: A photovoltaic device and method for fabrication include multijunction cells, each cell having a material grown independently from the other and including different band gap energies. An interface is disposed between the cells and configured to wafer bond the cells wherein the cells are configured to be adjacent without regard to lattice mismatch.

Abstract: A photosensitive device and method includes a top cell having an N-type layer, a P-type layer and a top intrinsic layer therebetween. A bottom cell includes an N-type layer, a P-type layer and a bottom intrinsic layer therebetween. The bottom intrinsic layer includes a Cu—Zn—Sn containing chalcogenide.

Abstract: Provided is an organic light emitting diode including a substrate, a light scattering structure including nano-structures on the substrate, a thin film on the nano-structures, and an air gap between the nano-structures, a planarizing layer covering the thin film and thicker than the thin film, a first electrode on the planarizing layer, an organic emission layer on the first electrode, and a second electrode on the organic emission layer.

Abstract: In various embodiments a solar cell may include a solar cell wafer substrate made of silicon having a major share of mono crystalline structure with {111} crystal plane parallel to one wafer edge; a dielectric layer disposed over the backside of solar cell wafer substrate; a plurality of contact openings extending through the dielectric layer to the solar cell wafer substrate; a plurality of metal contacts formed in the plurality of contact openings; and a metal layer disposed over the dielectric layer; wherein the metal layer is electrically coupled to the solar cell wafer substrate by means of the plurality of metal contacts; wherein at least one contact opening of the plurality of contact openings extends non parallel to {111} crystal plane.

Abstract: A solar cell of the present invention includes a collecting electrode extending in one direction on a first principal surface of a photoelectric conversion section. The collecting electrode includes first and second electroconductive layers in this order from the photoelectric conversion section side, and further includes an insulating layer provided with openings between the electroconductive layers. The first electroconductive layer is covered with the insulating layer, and the second electroconductive layer is partially in conduction with the first electroconductive layer through the openings of the insulating layer. The first electroconductive layer has non-central portions within a range from both ends of the first electroconductive layer, and a central portion between the two non-central portions, in a direction orthogonal to an extending direction of the first electroconductive layer. A density of openings at the central portion is higher than a density of openings at the non-central portion.

Abstract: A battery module includes a battery assembly having battery structures arranged side by side, the battery structures each having a battery body and a battery holder, and a pressure application member. Each battery holder has a first surface, a second surface, a projecting portion, which projects from the first surface and has a distal end face, and a receptacle portion recessed in the second surface. The projecting portion of each battery holder is inserted into the receptacle portion of the adjacent battery holder in a state in which the distal end face is free of contact with the adjacent battery holder. Each battery body contacts the adjacent battery body such that at least one of the first and second surfaces of the battery holder, which holds a battery body, is free from contact with the adjacent battery holder.

Abstract: Provided is an energy harvesting device, including a solar cell including at least one active layer for receiving a first range of electromagnetic frequencies, at least one layer including antenna structures for receiving RF energy and formed on a first side of the solar cell, and at least one semiconductor for absorbing IR energy, and formed on a second side of the solar cell opposite the first side.

Abstract: Optoelectronic detectors having one or more dilute nitride layers on substrates with lattice parameters matching or nearly matching GaAs are described herein. A semiconductor can include a substrate with a lattice parameter matching or nearly matching GaAs and a first doped III-V layer over the substrate. The semiconductor can also include an absorber layer over the first doped III-V layer, the absorber layer having a bandgap between approximately 0.7 eV and 0.95 eV and a carrier concentration less than approximately 1×1016 cm?3 at room temperature. The semiconductor can also include a second doped III-V layer over the absorber layer.

Abstract: According to one embodiment, a semiconductor photoreceiving device includes a substrate, a first structural layer provided on the substrate, in which light enters from the substrate side and in which a refractive index changes periodically, a semiconductor layer provided on the first structural layer and including an optical absorption layer, a reflective layer provided on the semiconductor layer, and a pair of electrodes configured to apply voltage to the optical absorption layer.

Abstract: The invention describes a device which enables MWIR photodetectors to operate at zero bias and deliver low dark current performance. The performance is achieved by incorporating a p-n junction in the barrier. The device consists of a p-type contact layer, a p-n junction in the compound barrier (CB) with graded composition and/or doping profiles, and an n-type absorber (p-CB-n) device.

Abstract: A photovoltaic device and method include a substrate coupled to an emitter side structure on a first side of the substrate and a back side structure on a side opposite the first side of the substrate. The emitter side structure or the back side structure include layers alternating between wide band gap layers and narrow band gap layers to provide a multilayer contact with an effectively increased band offset with the substrate and/or an effectively higher doping level over a single material contact. An emitter contact is coupled to the emitter side structure on a light collecting end portion of the device. A back contact is coupled to the back side structure opposite the light collecting end portion.

Abstract: A light emitting element includes a crystal growth substrate formed in a flat shape and that has a translucency, a semiconductor layer that constitutes a light emitting element structure and is formed at a side of a first surface of the crystal growth substrate, irregularities formed on a second surface of the crystal growth substrate, the second surface being an opposite surface of the first surface, and a protective layer that has a translucency and a predetermined hardness and brittleness, and covers the irregularities formed on the second surface of the crystal growth substrate.

Abstract: Embodiments of the invention generally relate to photovoltaic devices. In one embodiment, a method for forming a gallium arsenide based photovoltaic device includes providing a semiconductor structure, the structure including an absorber layer comprising gallium arsenide. A bypass function is provided in a p-n junction of the semiconductor structure, where under reverse-bias conditions the p-n junction breaks down in a controlled manner by a Zener breakdown effect.

Abstract: Provided is a photoelectric conversion element including a photoelectric conversion material layer that is constituted by an organic material having more excellent sensitivity and responsiveness than those of conventional ones. The photoelectric conversion element of the present invention includes: (a-1) a first electrode and a second electrode which are disposed apart from each other; and (a-2) a photoelectric conversion area which is disposed between the first electrode and the second electrode, wherein the photoelectric conversion area includes multiple layers and at least one of the multiple layers is formed of a dioxaanthanthrene-based compound represented by the structural formula (1).

Abstract: The structure and method of fabricating a radiation and temperature hard avalanche photodiode with integrated radiation and temperature hard readout circuit, comprising a substrate, an avalanche region, an absorption region, and a plurality of Ohmic contacts are presented. The present disclosure provides for tuning of spectral sensitivity and high device efficiency, resulting in photon counting capability with decreased crosstalk and reduced dark current.

Abstract: Disclosed herein are methods and mid-IR detection apparatus to measure analytes in gas or liquid phase. Solid state cooling of a crystalline lattice is effectively achieved with the controlled flow of charge carriers that absorb thermal energy from the semiconductor material which senses mid-IR photons. Reduction in temperature improves signal-to-noise ratios thus improving molecular sensitivity. In one embodiment the apparatus is used to detect a biomarker.

Abstract: Photosensitive devices and associated methods are provided. In one aspect, for example, a photosensitive imager device can include a semiconductor layer having multiple doped regions forming a least one junction, a textured region coupled to the semiconductor layer and positioned to interact with electromagnetic radiation. The textured region can be formed from a series of shallow trench isolation features.

Abstract: The present invention relates to a gas lock for separating two gas chambers, which while taking up minimal space makes it possible to achieve the separation of gases without contact with the product/educt/transporting system. The gas lock according to the invention is distinguished by the integration of a measuring chamber for measuring at least one physical and/or chemical property. Also, the present invention relates to a coating device which comprises a gas lock according to the invention. Also provided are possibilities for using the gas lock according to the invention.

Abstract: A nitride light-emitting diode includes a substrate, an n-type nitride layer, a light-emitting layer, a p-type nitride layer, a p+ layer, an AlInN layer, an n+ layer, and an ITO transparent electrode. A tunneling structure with an AlInN intermediate layer is adopted as the contact layer, which generates polarization charges at the tunneling junction interface and maintains effective width of the depletion region, thereby increasing tunneling probability of holes and reducing contact resistances.

Abstract: To provide a liquid crystal display device suitable for a thin film transistor which uses an oxide semiconductor. In a liquid crystal display device which includes a thin film transistor including an oxide semiconductor layer, a film having a function of attenuating the intensity of transmitting visible light is used as an interlayer film which covers at least the oxide semiconductor layer. As the film having a function of attenuating the intensity of transmitting visible light, a coloring layer can be used and a light-transmitting chromatic color resin layer is preferably used. An interlayer film which includes a light-transmitting chromatic color resin layer and a light-blocking layer may be formed in order that the light-blocking layer is used as a film having a function of attenuating the intensity of transmitting visible light.

Abstract: To provide a photoelectric conversion device having a high photoelectric conversion efficiency, a photoelectric conversion device 21 includes a substrate 1, a plurality of lower electrodes 2 on the substrate 1 comprising a metal element, a plurality of photoelectric conversion layers 33 comprising a chalcogen compound semiconductor formed on the plurality of lower electrodes 2 and separated from one another on the lower electrodes 2, a metal-chalcogen compound layer 8 comprising the metal element and a chalcogen element included in the chalcogen compound semiconductor formed between the lower electrode 2 and the photoelectric conversion layer 33, an upper electrode 5 formed on the photoelectric conversion layer 33, and a connection conductor 7 electrically connecting, in a plurality of the photoelectric conversion layers 33, the upper electrode 5 to the lower electrode 2 without interposition of the metal-chalcogen compound layer 8.