Schottky, Graded Doping, Plural Junction Or Special Junction Geometry Patents (Class 136/255)
  • Patent number: 10840404
    Abstract: Silver-containing absorbers for photovoltaic devices and techniques for fabrication thereof are provided. In one aspect, a method of forming an ink includes: mixing a silver halide and a solvent to form a first solution; mixing a metal, sulfur, and the solvent to form a second solution; combining the first solution and the second solution to form a precursor solution; and adding constituent components for an absorber material to the precursor solution to form the ink. Methods of forming an absorber film, a photovoltaic device, and the resulting photovoltaic device are also provided.
    Type: Grant
    Filed: December 28, 2018
    Date of Patent: November 17, 2020
    Assignee: International Business Machines Corporation
    Inventors: Priscilla D. Antunez, Talia S. Gershon, Richard A. Haight, Teodor K. Todorov
  • Patent number: 10818812
    Abstract: A multijunction solar cell assembly and its method of manufacture including first and second discrete and different semiconductor body subassemblies which are electrically interconnected to form a five junction solar cell, each semiconductor body subassembly including first, second, third and fourth lattice matched subcells; wherein the average band gap of all four cells in each subassembly is greater than 1.44 eV.
    Type: Grant
    Filed: August 19, 2019
    Date of Patent: October 27, 2020
    Assignee: SolAero Technologies Corp.
    Inventors: Daniel Derkacs, Jeffrey Steinfeldt
  • Patent number: 10809362
    Abstract: A detector array for detecting backscattered light of a LIDAR system includes an optical waveguide and a detector unit. The optical waveguide includes a light incoupling surface, which is formed by at least a portion of a circumferential surface of the optical waveguide for coupling-in the backscattered light of the LIDAR system, and a light outcoupling surface, which is formed by a cross-sectional surface of the optical waveguide on an axial end of the optical waveguide, and furthermore a luminescent material, which is introduced into the interior of the optical waveguide and configured to emit light re-emitted into a wavelength range of a LIDAR system due to luminescence. The detector unit is situated on the light outcoupling surface of the optical waveguide for the detection of at least a portion of the re-emitted light.
    Type: Grant
    Filed: June 25, 2018
    Date of Patent: October 20, 2020
    Assignee: Robert Bosch GmbH
    Inventors: Annette Frederiksen, Florian Mauch
  • Patent number: 10809588
    Abstract: Optically transmissive UV solar cells may be coupled to glass substrates, for example windows, in order to generate electricity while still providing suitable optical behavior for the window. The UV solar cells may be utilized to power electrochromic components coupled to the window to adjust or vary the transmissivity of the window. The UV solar cells may utilize a Schottky ZnO/ZnS heterojunction.
    Type: Grant
    Filed: July 25, 2017
    Date of Patent: October 20, 2020
    Assignee: Arizona Board of Regents on behalf of Arizona State University
    Inventors: Hongbin Yu, Sandwip Dey, Xiao Di Sun Zhou, Ebraheem Azhar
  • Patent number: 10811557
    Abstract: A growth structure having a lattice transition under a release layer is used as a seed crystal for growth of optoelectronic devices. The optoelectronic device can be a single- or multi-junction photovoltaic device. The release layer can be selectively removed in an epitaxial lift-off (ELO) process to separate the optoelectronic device from the growth structure and leave the region with the lattice transition intact to reuse the growth structure to grow additional devices. A manufacturing method is described that includes providing a growth structure having a substrate and a lattice transition from a first lattice constant to a second lattice constant, depositing a release layer on the growth structure, depositing on the release layer an epitaxial layer having a lattice constant that matches the second lattice and including an optoelectronic device, and removing the release layer to separate the epitaxial layer and the optoelectronic device from the growth structure.
    Type: Grant
    Filed: June 14, 2018
    Date of Patent: October 20, 2020
    Assignee: Alta Devices, Inc.
    Inventors: Andrew J. Ritenour, Ileana Rau, Claudio Canizares, Lori D. Washington, Brendan M. Kayes, Gang He
  • Patent number: 10811675
    Abstract: A lithium ion battery electrode includes silicon nanowires used for insertion of lithium ions and including a conductivity enhancement, the nanowires growth-rooted to the conductive substrate.
    Type: Grant
    Filed: August 22, 2018
    Date of Patent: October 20, 2020
    Assignee: Amprius, Inc.
    Inventors: Yi Cui, Song Han, Mark C. Platshon
  • Patent number: 10804415
    Abstract: Methods of fabricating solar cell emitter regions with differentiated P-type and N-type architectures and incorporating dotted diffusion, and resulting solar cells, are described. In an example, a solar cell includes a substrate having a light-receiving surface and a back surface. A first polycrystalline silicon emitter region of a first conductivity type is disposed on a first thin dielectric layer disposed on the back surface of the substrate. A second polycrystalline silicon emitter region of a second, different, conductivity type is disposed on a second thin dielectric layer disposed in a plurality of non-continuous trenches in the back surface of the substrate.
    Type: Grant
    Filed: December 4, 2017
    Date of Patent: October 13, 2020
    Assignee: SunPower Corporation
    Inventors: Staffan Westerberg, Gabriel Harley
  • Patent number: 10784396
    Abstract: An n-type low-doped region and a first main-surface side highly doped region, which has an n-type dopant concentration higher than that in the n-type low-doped region, are provided in an n-type crystalline silicon substrate. The first main-surface side highly doped region is arranged between the n-type low-doped region and a p-type amorphous silicon layer.
    Type: Grant
    Filed: December 29, 2016
    Date of Patent: September 22, 2020
    Assignee: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
    Inventors: Satoshi Tohoda, Masato Shigematsu, Kenta Matsuyama
  • Patent number: 10777691
    Abstract: A method and apparatus directed to busbar components for photovoltaic modules.
    Type: Grant
    Filed: October 16, 2018
    Date of Patent: September 15, 2020
    Assignee: SunPower Corporation
    Inventors: Douglas Rose, Shan Daroczi, Thomas Phu
  • Patent number: 10770612
    Abstract: The present disclosure provides a multijunction solar cell comprising: an upper solar subcell having an indirect band gap semiconductor emitter layer composed of greater than 0.7 but less than 1.0 mole fraction aluminum and a base layer, the emitter layer and the base layer forming a heterojunction solar subcell; and a lower solar subcell disposed beneath the upper solar subcell, wherein the lower solar subcell has an emitter layer and a base layer forming a photoelectric junction. In some embodiments, the emitter layer of the upper solar subcell is an n-type AlxGa1-xAs layer with 0.7<x<1.0 and having a band gap of greater than 1.85 eV.
    Type: Grant
    Filed: March 13, 2019
    Date of Patent: September 8, 2020
    Assignee: SolAero Technologies Corp.
    Inventors: Daniel Derkacs, Daniel Aiken, Samantha Whipple, Nathaniel Miller, Bed Pantha, Mark Stan
  • Patent number: 10756230
    Abstract: A photovoltaic device includes a crystalline substrate having a first dopant conductivity, an interdigitated back contact and a front surface field structure. The front surface field structure includes a crystalline layer formed on the substrate and a noncrystalline layer formed on the crystalline layer. The crystalline layer and the noncrystalline layer are doped with dopants having an opposite dopant conductivity from that of the substrate. Methods are also disclosed.
    Type: Grant
    Filed: March 21, 2018
    Date of Patent: August 25, 2020
    Assignee: International Business Machines Corporation
    Inventors: Tze-Chiang Chen, Bahman Hekmatshoartabari, Devendra K. Sadana, Davood Shahrjerdi
  • Patent number: 10745815
    Abstract: The present invention provides a photo-electrochemical (PEC) cell electrode having a surface portion and a bulk portion composed of the same material, wherein at least one of the bulk portion and the surface portion of the electrode is doped with at least one dopant, and wherein said doping is non-uniform along an axis perpendicular to the surface portion. The non-uniform doping can include different concentrations and/or types of the dopants in the bulk portion and in the surface portion of the electrode. There is further provided a PEC cell comprising said electrode and an electrolyte, wherein the surface portion of the electrode faces the electrolyte.
    Type: Grant
    Filed: January 5, 2016
    Date of Patent: August 18, 2020
    Assignee: TECHNION RESEARCH & DEVELOPMENT FOUNDATION LIMITED
    Inventors: Maytal Caspary Toroker, Ofer Neufeld, Natav Yatom
  • Patent number: 10749053
    Abstract: A multijunction solar cell and its method of fabrication, including an upper and a lower solar subcell each having an emitter layer and a base layer forming a photoelectric junction; a near infrared (NIR) wideband reflector layer disposed below the upper subcell and above the lower subcell for reflecting light in the spectral range of 900 to 1050 nm which represents unused and undesired solar energy and thereby reducing the overall solar energy absorptance in the solar cell and providing thermodynamic radiative cooling of the solar cell when deployed in space outside the atmosphere.
    Type: Grant
    Filed: March 3, 2017
    Date of Patent: August 18, 2020
    Assignee: SolAero Technologies Corp.
    Inventors: Daniel Derkacs, Bed Pantha, Samantha Cruz, Nathaniel Miller, Pravin Patel, Alexander Haas
  • Patent number: 10731263
    Abstract: A method and device for carrying out a chemical reaction, by supplying to the chemical reaction energy from an electron- and, optionally, photon-containing energy wave that is induced in one or more aggregated molecular ensembles, wherein the emission of which is stimulated from the ensembles. Emission is stimulated from the ensembles by a wide variety of energy inputs, and energy derived from this electron and/or photon energy wave is advantageously used as an energy source to assist chemical reduction reactions.
    Type: Grant
    Filed: October 23, 2018
    Date of Patent: August 4, 2020
    Inventors: Edward J. Britt, Reay S. Dick, W. Todd Wipke
  • Patent number: 10727001
    Abstract: Provided is a photoelectric conversion element including: a first electrode; a hole blocking layer; an electron transport layer; a hole transport layer; and a second electrode, wherein the hole blocking layer includes a metal oxide including a titanium atom and a niobium atom.
    Type: Grant
    Filed: April 16, 2015
    Date of Patent: July 28, 2020
    Assignee: RICOH COMPANY, LTD.
    Inventors: Naomichi Kanei, Yuuji Tanaka, Ryota Arai, Tamotsu Horiuchi
  • Patent number: 10720537
    Abstract: Discussed is a solar cell includes a semiconductor substrate, a conductive type region including a first conductive type region and a second conductive type region formed on one surface of the semiconductor substrate, an electrode including a first electrode and a second electrode, wherein the first electrode is connected to the first conductive type region and the second electrode is connected to the second conductive type region, and a passivation layer formed on the conductive type region. The passivation layer includes at least one of silicon nitride and silicon carbide.
    Type: Grant
    Filed: December 17, 2018
    Date of Patent: July 21, 2020
    Assignee: LG ELECTRONICS INC.
    Inventors: Indo Chung, Seunghwan Shim, Ilhyoung Jung, Jeongbeom Nam
  • Patent number: 10707364
    Abstract: A solar cell includes a first processed optically transparent (transparent) substrate and a second processed transparent substrate, wherein at least one of the first processed transparent substrate and second processed transparent substrate includes at least one electrode thereon. At least one solar absorber material substrate having a first side and a second side is between the first and second processed transparent substrates. The solar absorber material substrate is bonded by an adhesiveless bonded interface on both the first side and the second side to the first and second processed transparent substrates.
    Type: Grant
    Filed: May 29, 2015
    Date of Patent: July 7, 2020
    Assignee: University of Central Florida Research Foundation, Inc.
    Inventor: Hubert Seigneur
  • Patent number: 10700230
    Abstract: A method of manufacturing a multijunction solar cell having an upper first solar subcell composed of a semiconductor material having a first band gap; a second solar subcell adjacent to said first solar subcell and composed of a semiconductor material having a second band gap smaller than the first band gap and being lattice matched with the upper first solar subcell; a third solar subcell adjacent to said second solar subcell and composed of a semiconductor material having a third band gap smaller than the second band gap and being lattice matched with the second solar subcell; a graded interlayer adjacent to the third solar subcell; and a fourth solar subcell adjacent to said graded interlayer and composed of a semiconductor material having a fourth band gap smaller than the third band gap and being lattice mismatched with respect to the third solar subcell; wherein the fourth subcell has a direct bandgap of greater than 0.75 eV.
    Type: Grant
    Filed: August 18, 2017
    Date of Patent: June 30, 2020
    Assignee: SolAero Technologies Corp.
    Inventor: Daniel Derkacs
  • Patent number: 10680129
    Abstract: A solar cell for collecting solar radiation can include a barrier layer such as a dielectric barrier layer and a heterostructure including a first light absorbing layer and at least a second light absorbing layer. A method for forming the solar cell can include forming a sacrificial layer on a support substrate and forming the barrier layer on the sacrificial layer. The barrier layer is formed to have a strain gradient through its thickness. The heterostructure is attached to the barrier layer and the sacrificial layer is removed, thereby separating the barrier layer and the heterostructure from the support substrate. During the removal of the sacrificial layer, the strain gradient causes the barrier layer and heterostructure, to roll, curl, or spiral, thereby resulting in a radially stacked heterostructure that provides a light concentrating optical cavity having multiple light absorbing layers with different band gaps.
    Type: Grant
    Filed: October 5, 2018
    Date of Patent: June 9, 2020
    Assignee: STC.UNM
    Inventors: Francesca Cavallo, Vijay Saradhi Mangu
  • Patent number: 10680281
    Abstract: Thin amorphous or partially crystalline lithium-containing and conducting sulfide or oxysulfide glass electrode/separator members are prepared from a layer of molten glass or of glass powder. The resulting glass films are formed to lie face-to face against a lithium metal anode or a sodium metal anode and a cathode and to provide for good transport of lithium ions between the electrodes during repeated cycling of the cell and to prevent shorting of the cell by dendrites growing from the lithium metal or sodium metal anode.
    Type: Grant
    Filed: April 6, 2017
    Date of Patent: June 9, 2020
    Assignee: GM GLOBAL TECHNOLOGY OPERATIONS LLC
    Inventors: Thomas A. Yersak, James R. Salvador, Han Nguyen
  • Patent number: 10672932
    Abstract: A method for forming a photovoltaic device includes providing a substrate. A layer is deposited to form one or more layers of a photovoltaic stack on the substrate. The depositing of the amorphous layer includes performing a high power flash deposition for depositing a first portion of the layer. A low power deposition is performed for depositing a second portion of the layer.
    Type: Grant
    Filed: March 12, 2019
    Date of Patent: June 2, 2020
    Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Tze-Chiang Chen, Augustin J. Hong, Jeehwan Kim, Devendra K. Sadana
  • Patent number: 10673002
    Abstract: Organic photoelectric conversion element has a first electrode, a photoelectric conversion layer, and a second electrode. The photoelectric conversion layer has a first organic layer that contains a first organic semiconductor containing principally a p-type organic semiconductor, a second organic layer that contains a second organic semiconductor containing principally an n-type organic semiconductor, and an intermediate layer that contains the first organic semiconductor and the second organic semiconductor. The second organic layer is disposed at a side of the second electrode relative to the first organic layer. The intermediate layer is between the first organic layer and the second organic layer and reaches each of these layers. The thickness of the second organic layer is greater than the sum of the thicknesses of the first organic layer and intermediate layer.
    Type: Grant
    Filed: April 18, 2017
    Date of Patent: June 2, 2020
    Assignee: HAMAMATSU PHOTONICS K.K.
    Inventors: Shigeo Hara, Wataru Akahori, Takahiko Yamanaka, Tadataka Edamura
  • Patent number: 10658527
    Abstract: A solar cell comprising: a semiconductor substrate; a metallization paste on a surface of the semiconductor substrate; and a tunneling layer between the substrate surface and the metallization paste.
    Type: Grant
    Filed: August 9, 2016
    Date of Patent: May 19, 2020
    Assignee: HANWHA Q CELLS GMBH
    Inventors: Peter Engelhart, Ansgar Mette, Florian Stenzel
  • Patent number: 10656466
    Abstract: A wavelength conversion substrate according to one aspect of the present invention includes: a first substrate having an optical transparency; and a light modulation unit provided on one surface of the first substrate and configured to modulate a spectrum of incident light in accordance with a polarization state of the incident light. The light modulation unit includes: a plurality of metallic structures periodically provided at intervals from one another on one surface of the first substrate and configured to exhibit plasmon resonance due to incident light; and a plurality of wavelength conversion units provided so that at least some wavelength conversion units are adjacent to the plurality of metallic structures and comprising a wavelength converting material configured to emit light in a wavelength band different from a wavelength band of the incident light.
    Type: Grant
    Filed: January 24, 2017
    Date of Patent: May 19, 2020
    Assignee: SHARP KABUSHIKI KAISHA
    Inventors: Koji Murata, Masakazu Kamura, Takashi Katayama, Mitsuru Chida, Takuya Ootani, Emi Yamamoto
  • Patent number: 10658529
    Abstract: A manufacturing method of a solar cell is discussed. The manufacturing method of the solar cell includes forming a tunneling layer on one surface of a semiconductor substrate, forming a semiconductor layer on the tunneling layer, doping the semiconductor layer with a first conductive dopant and a second conductive dopant to form a first conductive semiconductor layer and a second conductive semiconductor layer, and diffusing hydrogen into the first and second conductive semiconductor layers to hydrogenate the first and second conductive semiconductor layers.
    Type: Grant
    Filed: June 5, 2014
    Date of Patent: May 19, 2020
    Assignee: LG ELECTRONICS INC.
    Inventors: Kwangsun Ji, Seungjik Lee, Sehwon Ahn
  • Patent number: 10637392
    Abstract: A solar module (and its fabrication method) is presented where a supporting substrate comprises a network of finger traces connected to bus bars. Photo-active layer portions and upper electrode layer portions are deposited on the substrate thereby forming a network of cells. The cells are connected in series by connecting the bus bar of one cell to the upper electrode layer of the adjacent cell, and the bus bars of two adjacent cells are coupled through a bypass element for protecting the cell array.
    Type: Grant
    Filed: May 25, 2012
    Date of Patent: April 28, 2020
    Assignee: Nederlandse Organisatie voor Toegepast-Natuurwetenschappelijk Onderzoek TNO
    Inventor: Edward Willem Albert Young
  • Patent number: 10629758
    Abstract: Methods of fabricating solar cell emitter regions with differentiated P-type and N-type regions architectures, and resulting solar cells, are described. In an example, a solar cell can include a substrate having a light-receiving surface and a back surface. A first doped region of a first conductivity type, wherein the first doped region is disposed in a first portion of the back surface. A first thin dielectric layer disposed over the back surface of the substrate, where a portion of the first thin dielectric layer is disposed over the first doped region of the first conductivity type. A first semiconductor layer disposed over the first thin dielectric layer. A second doped region of a second conductivity type in the first semiconductor layer, where the second doped region is disposed over a second portion of the back surface. A first conductive contact disposed over the first doped region and a second conductive contact disposed over the second doped region.
    Type: Grant
    Filed: September 30, 2016
    Date of Patent: April 21, 2020
    Assignee: SunPower Corporation
    Inventors: Seung Bum Rim, Michael C. Johnson
  • Patent number: 10629769
    Abstract: The present invention provides a method of manufacturing a solar cell, the method including: a process of forming a first semiconductor layer on an upper surface of a semiconductor wafer and forming a second semiconductor layer, having a polarity different from a polarity of the first semiconductor layer, on a lower surface of the semiconductor wafer; a process of forming a first transparent conductive layer on an upper surface of the first semiconductor layer to externally expose a portion of the first semiconductor layer and forming a second transparent conductive layer on a lower surface of the second semiconductor layer to externally expose a portion of the second semiconductor layer; and a plasma treatment process on at least one of the first transparent conductive layer and the second transparent conductive layer, wherein the plasma treatment process includes a process of removing the externally exposed portion of the first semiconductor layer and the externally exposed portion of the second semiconduct
    Type: Grant
    Filed: August 21, 2017
    Date of Patent: April 21, 2020
    Assignee: JUSUNG ENGINEERING CO., LTD.
    Inventors: Jeong Ho Seo, Soon Bum Kwon, Ki-Duck Kim, Jong In Kim, Chang Kyun Park, Won Suk Shin, Kyoung Jin Lim, Beop Jong Jin
  • Patent number: 10622409
    Abstract: There is provided a photovoltaic device that comprises a photoactive region, the photoactive region comprising a perovskite material of general formula A1?xA?xBX3?yX?y wherein A is a formamidinium cation ((HC(NH2)2)+), A? is a caesium cation (Cs+), B is at least one divalent inorganic cation, X is iodide and X? is bromide, and x is greater than 0 and equal to or less than 0.4 and y is greater than 0 and less than or equal to 3. There is also provided a method of producing a photovoltaic device comprising a photoactive region comprising the perovskite material, and formulations for use in the formation of the perovskite material.
    Type: Grant
    Filed: June 10, 2016
    Date of Patent: April 14, 2020
    Assignee: OXFORD PHOTOVOLTAICS LIMITED
    Inventors: Brett Akira Kamino, Laura Miranda Perez
  • Patent number: 10600922
    Abstract: A solar cell can have a first dielectric formed over a first doped region of a silicon substrate. The solar cell can have a second dielectric formed over a second doped region of the silicon substrate, where the first dielectric is a different type of dielectric than the second dielectric. A doped semiconductor can be formed over the first and second dielectric. A positive-type metal and a negative-type metal can be formed over the doped semiconductor.
    Type: Grant
    Filed: April 21, 2016
    Date of Patent: March 24, 2020
    Assignee: SunPower Corporation
    Inventor: David D. Smith
  • Patent number: 10593487
    Abstract: A formulation for use in the preferential formation of thin films of a perovskite material AMX 3 with a certain required crystalline structure, wherein said formulation comprises two or more compounds which between them comprise one or more first organic cations A; one or more metalcations M; one or more second cations A?; one or more first anions X and one or more second anions X?.
    Type: Grant
    Filed: September 2, 2015
    Date of Patent: March 17, 2020
    Assignee: OXFORD PHOTOVOLTAICS LIMITED
    Inventors: Nicola Beaumont, Brett Akira Kamino, Benjamin Langley, Edward James William Crossland
  • Patent number: 10586659
    Abstract: A photovoltaic device, comprises (1) a first conductive layer, (2) an optional blocking layer, on the first conductive layer, (3) a semiconductor layer, on the first conductive layer, (4) a light-harvesting material, on the semiconductor layer, (5) a hole transport material, on the light-harvesting material, and (6) a second conductive layer, on the hole transport material. The light-harvesting material comprises a perovskite absorber, and the second conductive layer comprises nickel. The semiconductor layer may comprise TiO2 nanowires. The light-harvesting material may comprise a perovskite absorber containing a pseudohalogen.
    Type: Grant
    Filed: April 6, 2015
    Date of Patent: March 10, 2020
    Assignee: Board of Trustees of Northern Illinois University
    Inventor: Tao Xu
  • Patent number: 10580918
    Abstract: The present disclosure provides dual-function photovoltaic (PV) devices that generate electric current and have a colored surface or colored appearance. The PV devices may be angle insensitive and polarization independent. Such a dual-function PV device may have an ultra-thin photoactive layer (e.g., comprising an undoped amorphous silicon) with a thickness of ? about 50 nm. The PV device is configured to filter (transmit or reflect) a portion of an electromagnetic spectrum, providing a controllable and tunable color appearance. Such nanometer a-Si/organic hybrid cells are designed to transmit or reflect angle insensitive colors, electrically powering up to 2% to 3% or higher by efficient absorbed photon to charge conversion. In certain variations, the present disclosure further provides decorative power generating panels creating angle insensitive transmissive or reflective colors.
    Type: Grant
    Filed: November 3, 2014
    Date of Patent: March 3, 2020
    Assignee: THE REGENTS OF THE UNIVERSITY OF MICHIGAN
    Inventors: Lingjie Jay Guo, Jae Yong Lee, Kyu-Tae Lee
  • Patent number: 10565938
    Abstract: The present invention provides a blue light compensation film and an OLED display. The blue light compensation film of the present invention effectively absorbs blue light with wavelength longer than blue wavelength and excite blue light by using a blue light upconversion luminescent material, and effectively improves color shift white OLED device caused by short lifespan of blue electroluminescent material to achieve blue light compensation of the white OLED device and solve the of yellowing in traditional OLED display with age. The OLED display of the present invention comprises the blue light compensation film to avoid color shift problem and provides good display quality.
    Type: Grant
    Filed: December 20, 2016
    Date of Patent: February 18, 2020
    Assignee: TCL CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD.
    Inventors: Dongze Li, Lixuan Chen
  • Patent number: 10566580
    Abstract: An OLED is provided that includes a substrate; and an anode, a P-type organic semiconductor layer, an N-type organic semiconductor layer, and a cathode that are successively laminated on the substrate. An interface between the P-type organic semiconductor layer and the N-type organic semiconductor layer is a curved surface structure.
    Type: Grant
    Filed: July 26, 2017
    Date of Patent: February 18, 2020
    Assignee: Shenzhen China Star Optoelectronics Technology Co., Ltd
    Inventor: Kaifeng Zhou
  • Patent number: 10566488
    Abstract: A solar cell and a method for manufacturing the same are disclosed. The solar cell includes a semiconductor substrate doped with impurities of a first conductive type, a front surface field region disposed at a front surface of the substrate and doped with impurities of the first conductive type at a concentration higher than those of the substrate, a tunnel layer disposed on a back surface of the substrate and formed of a dielectric material, an emitter region disposed at a first portion of a back surface of the tunnel layer and doped with impurities of a second conductive type opposite the first conductive type, and a back surface field region disposed at a second portion of the back surface of the tunnel layer and doped with impurities of the first conductive type at a concentration higher than those of the substrate.
    Type: Grant
    Filed: July 28, 2015
    Date of Patent: February 18, 2020
    Assignee: LG ELECTRONICS INC.
    Inventors: Seunghwan Shim, Ilhyoung Jung, Indo Chung, Eunhye Youn
  • Patent number: 10566473
    Abstract: A compound semiconductor solar cell and a method of manufacturing the same are disclosed. The method for fabricating a compound semiconductor solar cell comprises forming a first mask layer on a front surface of a compound semiconductor layer of a second region which is a region other than a first region where the front electrode is to be formed; forming a seed metal layer on the front surface of the compound semiconductor layer of the first region and on the first mask layer of the second region; removing the seed metal layer over the first mask layer and the first mask layer; removing a part of the compound semiconductor layer of the second region from the front surface of the compound semiconductor layer by using the seed metal layer of the first region as a mask; forming a second mask layer on the compound semiconductor layer of the second region; forming an electrode metal layer on the seed metal layer not covered by the second mask layer; and removing the second mask layer.
    Type: Grant
    Filed: April 24, 2018
    Date of Patent: February 18, 2020
    Assignee: LG ELECTRONICS INC.
    Inventors: Jinhee Park, Soohyun Kim
  • Patent number: 10566491
    Abstract: An efficient solar cell and method of fabricating the same is disclosed. The solar cell includes an n-doped substrate layer. A p-doped buffer layer is disposed on the n-doped substrate layer. A quantum dot absorber stack is disposed on the buffer layer. The absorber stack includes at least one quantum dot layer and one p-doped spacer layer. A p-doped cap layer is disposed on the quantum dot absorber layer. The thickness of the quantum dot layer is less than an electron diffusion length from the depletion region formed by the n-doped substrate layer and the p-doped buffer layer. The quantum dot absorber layer allows for additional photo currents from two-photon absorption from the p-doped cap layer being exposed to a light source.
    Type: Grant
    Filed: June 6, 2013
    Date of Patent: February 18, 2020
    Assignees: The George Washington University, National Centre for Scientific Research
    Inventors: Andrei Afanasev, Ara Kechiantz, Jean-Louis Lazzari
  • Patent number: 10553740
    Abstract: A multijunction solar cell includes an InGaAs buffer layer and an InGaAlAs grading interlayer disposed below, and adjacent to, the InGaAs buffer layer. The grading interlayer achieves a transition in lattice constant from one solar subcell to another solar subcell.
    Type: Grant
    Filed: April 27, 2018
    Date of Patent: February 4, 2020
    Assignee: SolAero Technologies Corp.
    Inventors: Arthur Cornfeld, Mark A. Stan
  • Patent number: 10529879
    Abstract: A photoelectric conversion device may include a substrate, a photoactive layer disposed on the substrate, and a first electrode and a second electrode respectively connected to corresponding edges of the photoactive layer. The photoactive layer may include a first oxide semiconductor layer on the substrate, and a plurality of quantum dot layers and a plurality of second oxide semiconductor layers that are alternately formed on the first oxide semiconductor layer.
    Type: Grant
    Filed: May 25, 2018
    Date of Patent: January 7, 2020
    Assignees: SAMSUNG ELECTRONICS CO., LTD., CHEONGJU University Industry & Academy Cooperation Foundation
    Inventors: Kyungsang Cho, Sangyeol Lee, Chanwook Baik
  • Patent number: 10529877
    Abstract: Semiconductor devices including two-dimensional (2D) materials and methods of manufacturing the semiconductor devices are provided. A semiconductor device may include a semiconductor layer including layers of a 2D material, and an intercalation material between the layers of the 2D material. The semiconductor device may further include a first conductive layer on a first surface of the semiconductor layer and a second conductive layer on a second surface of the semiconductor layer that is opposite the first surface. A portion of the 2D material may have a first crystalline structure, and another portion of the 2D material may have a second crystalline structure that is different from the first crystalline structure. The 2D material may include a metal chalcogenide-based material.
    Type: Grant
    Filed: November 29, 2017
    Date of Patent: January 7, 2020
    Assignees: Samsung Electronics Co., Ltd., Research & Business Foundation Sungkyunkwan University
    Inventors: Jinseong Heo, Kiyoung Lee, Seongjun Park, Yongseon Shin, Woojong Yu
  • Patent number: 10516066
    Abstract: A photovoltaic conversion device (10) includes a semiconductor substrate (1), a passivation film (3), n-type amorphous semiconductor strips, p-type amorphous semiconductor strips (5p), and electrodes (7). The passivation film (3) is formed on one of the surfaces of the semiconductor substrate (1). The n- and p-type amorphous semiconductor strips are arranged alternately as viewed along an in-plane direction of the semiconductor substrate (1) (Y-axis direction). The p-type amorphous semiconductor strips (5p) have reduced-thickness regions (51) at some intervals as viewed along the length direction of the p-type amorphous semiconductor strips (5p) (X-axis direction). The n-type amorphous semiconductor strips have a similar structure. The electrodes (7) are provided on the p-type amorphous semiconductor strips (5p), but not in areas where the reduced-thickness regions (51) have a positive curvature r with respect to the length direction of the reduced-thickness regions (51).
    Type: Grant
    Filed: March 17, 2017
    Date of Patent: December 24, 2019
    Assignee: SHARP KABUSHIKI KAISHA
    Inventors: Makoto Higashikawa, Toshihiko Sakai, Kazuya Tsujino, Liumin Zou, Teruaki Higo, Yuta Matsumoto
  • Patent number: 10515767
    Abstract: The invention discloses a perovskite solar cell and a method of fabrication thereof. The perovskite solar cell sequentially comprises a transparent electrode, a mesoporous P-I-N framework and a counter electrode from the bottom to top; the mesoporous P-I-N framework is composed of an n-type semiconductor layer, an insulating layer, and a p-type semiconductor layer in a sequentially stacked mode, and the n-type semiconductor layer, the insulating layer and the p-type semiconductor layer all comprise mesopores filled with a perovskite material. The preparation method sequentially includes preparing the mesoporous P-I-N framework on a transparent conductive substrate through a spin-coating method or a screen printing method, filling with the perovskite material and preparing the counter electrode layer.
    Type: Grant
    Filed: July 24, 2015
    Date of Patent: December 24, 2019
    Assignees: ECOLE POLYTECHNIQUE FEDERALE DE LAUSANNE (EPFL), HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY
    Inventors: Mingkui Wang, Kun Cao, Jin Cui, Zhixiang Zuo, Yan Shen, Shaik Mohammad Zakeeruddin, Michael Graetzel
  • Patent number: 10505066
    Abstract: A photovoltaic device includes a first contact and a hybrid absorber layer. The hybrid absorber layer includes a chalcogenide layer and a semiconductor layer in contact with the chalcogenide layer. A buffer layer is formed on the absorber layer, and a transparent conductive contact layer is formed on the buffer layer.
    Type: Grant
    Filed: August 11, 2016
    Date of Patent: December 10, 2019
    Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Tayfun Gokmen, Oki Gunawan, Richard A. Haight, Jeehwan Kim, David B. Mitzi, Mark T. Winkler
  • Patent number: 10505065
    Abstract: In manufacturing a crystalline silicon-based solar cell, a first intrinsic thin-film is formed on a conductive single-crystalline silicon substrate, and then a hydrogen plasma etching is performed. A second intrinsic thin-film is formed on the first intrinsic thin-film after the hydrogen plasma etching, and a conductive silicon-based thin-film is formed on the second intrinsic thin-film. The second intrinsic thin-film is formed by plasma-enhanced CVD with a silicon-containing gas and hydrogen being introduced into a CVD chamber. The amount of the hydrogen introduced into the CVD chamber during formation of the second intrinsic thin-film is 50 to 500 times an introduction amount of the silicon-containing gas.
    Type: Grant
    Filed: June 22, 2018
    Date of Patent: December 10, 2019
    Assignee: KANEKA CORPORATION
    Inventors: Toshihiko Uto, Daisuke Adachi
  • Patent number: 10490684
    Abstract: A compound photovoltaic cell includes a substrate, a first cell made of a first semiconductor material and formed on the substrate, a tunnel layer, and a second cell made of a second semiconductor material lattice mismatched with a material of the substrate, connected to the first cell via the tunnel layer, and disposed on an incident side with respect to the first cell, wherein band gaps of the first and the second cells become smaller from an incident side to a back side, and wherein the tunnel layer includes a p-type layer disposed on the incident side and a n-type layer disposed on the back side, the p-type layer being a p+-type (Al)GaInAs layer, the n-type layer being an n+-type InP layer, an n+-type GaInP layer having a tensile strain with respect to InP or n+-type Ga(In)PSb layer having a tensile strain with respect to InP.
    Type: Grant
    Filed: April 10, 2017
    Date of Patent: November 26, 2019
    Assignee: RICOH COMPANY, LTD.
    Inventors: Shunichi Sato, Nobuhiko Nishiyama
  • Patent number: 10483450
    Abstract: A semiconductor cell that allows thermally excited electron hole pairs to be harnessed as usable energy. The material bandgap and dopant levels of various layers allows for voltage potential and current to be created. The energy production results in a lowered temperature in the cell. Energy is transferred back to the cell in the form of heat from the surroundings via convection or conduction. Cell layout is a n n++-p++ p configuration and a module has multiple cells.
    Type: Grant
    Filed: November 28, 2015
    Date of Patent: November 19, 2019
    Inventor: Cody Brian Wabiszewski
  • Patent number: 10475831
    Abstract: The present technology relates to a solid-state image sensing device for preventing a reduction in light receiving sensitivity of an avalanche photodiode, an electronic device, and a method for manufacturing the solid-state image sensing device. A solid-state image sensing device includes an avalanche photodiode having a first region of a first conductive type, a second region of a second conductive type different from the first conductive type, and an avalanche region sandwiched between the first region and the second region, which extend in a thickness direction of a semiconductor substrate, and a film formed on at least one side of the semiconductor substrate and including a metal oxide film, a metal nitride film, or a mix crystal-based film of metal oxide film and metal nitride film. The present technology can be applied to CMOS image sensors, for example.
    Type: Grant
    Filed: September 5, 2016
    Date of Patent: November 12, 2019
    Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
    Inventors: Susumu Inoue, Yuhi Yorikado, Atsushi Toda
  • Patent number: 10472675
    Abstract: Under one aspect, a device is provided for use in luminescent imaging. The device can include a photonic superlattice including a first material, the first material having a first refractive index. The first material can include first and second major surfaces and first and second pluralities of features defined through at least one of the first and second major surfaces, the features of the first plurality differing in at least one characteristic from the features of the second plurality. The photonic superlattice can support propagation of a first wavelength and a second wavelength approximately at a first angle out of the photonic superlattice, the first and second wavelengths being separated from one another by a first non-propagating wavelength that does not selectively propagate at the first angle out of the photonic superlattice.
    Type: Grant
    Filed: July 13, 2018
    Date of Patent: November 12, 2019
    Assignee: ILLUMINA, INC.
    Inventors: Dietrich Dehlinger, Cheng Frank Zhong, Juraj Topolancik
  • Patent number: 10475948
    Abstract: A method of fabricating a visibly transparent, ultraviolet (UV) photodetector is provided. The method includes laying a first electrode onto a substrate surface, the first electrode being formed of a carbon-based, single-layer material. A block is patterned over an end of the first electrode and portions of the substrate surface. The block is formed of a visibly transparent material that is able to be deposited into the block at 75° C.-125° C. In addition, the method includes masking a section of the block and exposed sections of the first electrode. A second electrode is laid onto an unmasked section of the block with an end of the second electrode laid onto the substrate surface. The second electrode is formed of the carbon-based, single-layer material.
    Type: Grant
    Filed: May 31, 2018
    Date of Patent: November 12, 2019
    Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Damon Farmer, Shu-Jen Han