Abstract: The present invention relates to a double sided solar cell assembly, including at least one carbon-based perovskite solar cell unit, which has been included in a sandwich structure together with a second solar cell unit, which is a dye-sensitized photoelectrode.

Abstract: The present invention relates to devices comprising metal halide perovskites and organic passivating agents. In particular, the invention relates to photovoltaic and optoelectronic devices comprising passivated metal halide perovskites. The device according to the invention comprises: (a) a metal halide perovskite; and (b) a passivating agent which is an organic compound; wherein molecules of the passivating agent are chemically bonded to anions or cations in the metal halide perovskite.

Abstract: Provided are structures and methods for doping polycrystalline thin film semiconductor materials in photovoltaic devices. Embodiments include methods for forming and treating a photovoltaic semiconductor absorber layer.

Abstract: A multijunction solar cell including an upper first solar subcell having a first band gap and positioned for receiving an incoming light beam; a second solar subcell disposed below and adjacent to and lattice matched with said upper first solar subcell, and having a second band gap smaller than said first band gap; wherein at least one of the solar subcells has a graded band gap throughout the thickness of at least a portion of the active layer of the one solar subcell.

Abstract: A multijunction solar cell including a substrate and a top (or light-facing) solar subcell having an emitter layer, a base layer, and a window layer adjacent to the emitter layer, the window layer composed of a material that is optically transparent, has a band gap of greater than 2.6 eV, and includes an appropriately arranged multilayer antireflection coating on the top surface thereof.

Abstract: A schottky barrier diode element having a silicon (Si) substrate, an oxide semiconductor layer and a schottky electrode layer, wherein the oxide semiconductor layer includes a polycrystalline and/or amorphous oxide semiconductor having a band gap of 3.0 eV or more and 5.6 eV or less.

Abstract: The present invention relates to a colored tandem solar cell module, and more particularly, a high-efficiency thin-film colored tandem solar cell module which does not require separate photocurrent matching, implements a color without a separate color filter, and generates power with high efficiency. According to the present invention, it is possible to provide a colored tandem solar cell module including solar cells, which each include a bottom electrode having an inverse diode structure formed by sequentially stacking a first electrode, a first semiconductor layer, a second semiconductor layer, and a second electrode on a substrate, a light absorption layer formed on the bottom electrode, and a top electrode formed on the light absorption layer, thereby eliminating the need for photocurrent matching, implementing a color without a separate color filter, and improving efficiency.

Abstract: A photoelectric device is disclosed. The photoelectric device includes a first electrode, a second electrode, and an electrolyte disposed between the first electrode and the second electrode. The second electrode includes a transparent layer for allowing light to penetrate into the second electrode, an electron transport layer coupled to the transparent layer, and a genetically hybridized fluorescent silk layer as a photo-sensitizer coupled to the electron transport layer.

Abstract: A multijunction solar cell including an upper first solar subcell having a first band gap and positioned for receiving an incoming light beam; and a second solar subcell disposed below and adjacent to and lattice matched with said upper first solar subcell, and having a second band gap smaller than said first band gap; wherein at least one of the solar subcells has a graded band gap throughout the thickness of at least a portion of its emitter layer and base layer.

Abstract: There is disclosed an organic photovoltaic device comprising at least one first subcell comprising at least one first small molecular weight material deposited by solution processing, and at least one second subcell comprising a weight at least one second small molecular material deposited by vacuum evaporation. Also disclosed herein is a method for preparing an organic photovoltaic device comprising at least one first subcell comprising at least one first small molecular weight material and at least one second subcell comprising at least one second small molecular weight material, the method comprising depositing at least one first small weight material by solution processing; and depositing at least one second small weight material by vacuum evaporation.

Abstract: There is provided a method of producing a photovoltaic device comprising a photoactive region comprising a layer of perovskite material, wherein the layer of perovskite material is disposed on a surface that has a roughness average (Ra) or root mean square roughness (Rrms) of greater than or equal to 50 nm. The method comprises using vapour deposition to deposit a substantially continuous and conformal solid layer comprising one or more initial precursor compounds of the perovskite material, and subsequently treating the solid layer with one or more further precursor compounds to form a substantially continuous and conformal solid layer of the perovskite material on the rough surface. There is also provided a photovoltaic device comprising a photoactive region comprising a layer of perovskite material disposed using the method.

Abstract: A four junction solar cell and its method of manufacture including an upper first solar subcell composed of a semiconductor material having a first band gap; a second solar subcell adjacent to said first solar subcell and composed of a semiconductor material having a second band gap smaller than the first band gap and being lattice matched with the upper first solar subcell; a third solar subcell adjacent to said second solar subcell and composed of a semiconductor material having a third band gap smaller than the second band gap and being lattice matched with the second solar subcell; a graded interlayer adjacent to the third solar subcell and having a fourth band gap greater than the third band gap; and a bottom solar subcell adjacent to the graded interlayer and being lattice mismatched from the third solar subcell and having a fifth band gap smaller than the fifth band gap, wherein the selection of composition of the subcells and their band gaps maximizes the efficiency of the solar cell at a predetermine

Abstract: A multijunction solar cell including an upper first solar subcell having a first band gap and positioned for receiving an incoming light beam; a second solar subcell disposed below and adjacent to and lattice matched with said upper first solar subcell, and having a second band gap smaller than said first band gap; wherein at least one of the solar subcells has a graded band gap throughout the thickness of at least a portion of the active layer.

Abstract: An energy harvesting system for generating electrical energy, includes a first substrate, a perovskite layer formed on the first substrate, a charge transport layer disposed on the perovskite layer, and the charge transport layer being configured to slide over the perovskite layer, and a second substrate formed on the charge transport layer.

Abstract: A quantum dot comprising a core comprising a first semiconductor nanocrystal comprising zinc, selenium, and optionally tellurium; and a shell disposed on the core and comprising a second semiconductor nanocrystal having a different composition from the first semiconductor nanocrystal, and comprising zinc and at least one of sulfur and selenium, wherein the shell comprises at least three branches extending from the core, wherein at least one of the branches has a length of greater than or equal to about 2 nm, the quantum dot emits blue light comprising a maximum emission peak at a wavelength of less than or equal to about 470 nm, a full width at half maximum (FWHM) of the maximum emission peak is less than about 35 nm, and the quantum dot does not comprise cadmium.

Abstract: A microcomputer performs a power supply operation to a wireless communication module at a first time interval set based on a power generation amount at a lowest day power generation amount of a temperature differential power generation module. In addition, the microcomputer performs the power supply operation to a sensor at a second time interval set based on the power generation amount at the lowest day power generation amount of the temperature differential power generation module.

Abstract: A method of fabricating a semiconductor substrate includes the following steps. A carrier substrate is provided, and a plasma treatment is performed on the surface of the carrier substrate. A polycrystalline semiconductor layer is formed on the surface of the carrier substrate. A rapid thermal treatment is then performed on the polycrystalline semiconductor layer. A buried dielectric layer is then formed on the polycrystalline semiconductor layer. Afterwards, a single crystalline semiconductor layer is formed on the buried dielectric layer.

Abstract: A metamorphic multijunction solar cell having a growth semiconductor substrate with a top surface having a doping in the range of 1x1018 to 1x1020 charge carriers/cm3; a window layer for a top (light facing) subcell formed directly on the top surface of the growth substrate; a sequence of layers of semiconductor material forming a solar cell directly on the window layer; a surrogate substrate on the top surface of the sequence of layers of semiconductor material, wherein a portion of the semiconductor substrate is removed so that only the high doped surface portion of the substrate, having a thickness in the range of 0.5 ?m to 10 ?m, remains.

Abstract: Device structures, apparatuses, and methods are disclosed for photovoltaic cells that may be a single junction or multijunction solar cells, with at least one layer comprising a group-IV semiconductor in which part of the cell comprises a second layer comprising a III-V semiconductor or group-IV semiconductor having a different composition than the group-IV semiconductor of the first layer, such that a heterostructure is formed between the first and second layers.

Abstract: A solar cell in which performance degradation caused by an alkali component is suppressed. A solar cell is a back-contact solar cell that comprises a semiconductor substrate; a p-type semiconductor layer, and a first electrode layer corresponding thereto, layered sequentially on one part of the rear side of the semiconductor substrate; an n-type semiconductor layer, and a second electrode layer corresponding thereto, layered sequentially on another part of the rear side of the semiconductor substrate. One part of the n-type semiconductor layer lies directly atop one part of the adjacent p-type semiconductor layer. The first electrode layer is separate from the n-type semiconductor layer and covers the p-type semiconductor layer. The second electrode layer covers the entirety of an overlapping portion where the n-type semiconductor layer lies atop the p-type semiconductor layer.

Abstract: Photovoltaic module comprising a plurality of multijunction photovoltaic cells, at least one of said multijunction photovoltaic cells comprising: a first photovoltaic sub-cell extending over a first predetermined area; a second photovoltaic sub-cell provided on said first photovoltaic sub-cell and in electrical connection therewith, said second photovoltaic sub-cell extending over a second predetermined area which is smaller than said first predetermined area so as to define at least one zone in which said first photovoltaic sub-cell is uncovered by said second photovoltaic sub-cell; an electrically-insulating layer situated upon said first photovoltaic sub-cell in at least a part of said zone; and an electrically-conductive layer situated upon at least part of said electrically-insulating layer and in electrical connection with a surface of said second photovoltaic sub-cell, wherein at least one of said multijunction photovoltaic cells is electrically connected to at least one other of said multijunction

Abstract: Methods of fabricating solar cell emitter regions with differentiated P-type and N-type architectures and incorporating dotted diffusion, and resulting solar cells, are described. In an example, a solar cell includes a substrate having a light-receiving surface and a back surface. A first polycrystalline silicon emitter region of a first conductivity type is disposed on a first thin dielectric layer disposed on the back surface of the substrate. A second polycrystalline silicon emitter region of a second, different, conductivity type is disposed on a second thin dielectric layer disposed in a plurality of non-continuous trenches in the back surface of the substrate.

Abstract: The invention relates to a deep depletion MIS transistor (100), comprising: a source region (S) and a drain region (D) made of doped semiconductor diamond of a first conductivity type; a channel region (C) made of doped semiconductor diamond of the first conductivity type, arranged between the source region and the drain region; a drift region (DR) made of doped semiconductor diamond of the first conductivity type, arranged between the channel region and the drain region; and a conductive gate (111) arranged on the channel region and separated from the channel region by a dielectric layer (113).

Abstract: To provide a solid-state imaging element capable of further improving reliability. Provided is a solid-state imaging element including at least a first photoelectric conversion section, and a semiconductor substrate in which a second photoelectric conversion section is formed, in this order from a light incidence side, in which the first photoelectric conversion section includes at least a first electrode, a photoelectric conversion layer, a first oxide semiconductor layer, a second oxide semiconductor layer, and a second electrode in this order, and a film density of the first oxide semiconductor layer is higher than a film density of the second oxide semiconductor layer.

Abstract: An aspect of the present disclosure is a method that includes combining a first organic salt (A1X1), a first metal salt (M1(X2)2), a second organic salt (A2X3), a second metal salt (M2Cl2), and a solvent to form a primary solution, where A1X1 and M1(X2)2 are present in the primary solution at a first ratio between about 0.5 to 1.0 and about 1.5 to 1.0, and A2X3 to M2Cl2 are present in the primary solution at a second ratio between about 2.0 to 1.0 and about 4.0 to 1.0. In some embodiments of the present disclosure, at least one of A1 or A2 may include at least one of an alkyl ammonium, an alkyl diamine, cesium, and/or rubidium.

Abstract: A three-dimensional sensing device includes a pressure sensing film, a silver nanowire electrode, a first touch sensing electrode layer, and a second touch sensing electrode layer. The pressure sensing film includes a substrate and a polarized pressure sensing layer. The polarized pressure sensing layer is disposed on and in contact with a first side of the substrate. The silver nanowire electrode is disposed on a side of the polarized pressure sensing layer opposite to the substrate. The first touch sensing electrode layer is disposed on and in contact with a second side of the substrate and includes a patterned electrode with burr etching. The patterned electrode includes first-axis electrodes. A gap between adjacent two first-axis electrodes is between 20 ?m to 35 ?m. The second touch sensing electrode layer is disposed on a side of the first touch sensing electrode layer opposite to the polarized pressure sensing layer.

Abstract: Techniques related to reclamation of energy leaking from waveguides are disclosed. One or more photovoltaic cells may receive light leaking from a waveguide at a first surface of the wave guide. The first surface may be opposite to a second surface at which an in-coupling element is located. The light leaking from the waveguide results from inefficiency in redirecting incoming light for propagation within the waveguide. The one or more photovoltaic cells may generate electric power from the light leaking from the waveguide.

Abstract: A multijunction solar cell including an upper first solar subcell having a first band gap and positioned for receiving an incoming light beam; a second solar subcell disposed below and adjacent to and lattice matched with said upper first solar subcell, and having a second band gap smaller than said first band gap; wherein at least one of the solar subcells has a graded band gap throughout the thickness of at least a portion of the active layer.

Abstract: An engineered substrate comprises: a seed layer made of a first semiconductor material for growth of a solar cell; a support substrate comprising a base and a surface layer epitaxially grown on a first side of the base, the base and the surface layer made of a second semiconductor material; a direct bonding interface between the seed layer and the surface layer; wherein a doping concentration of the surface layer is higher than a predetermined value such that the electrical resistivity at the direct bonding interface is below 10 mOhm·cm2, preferably below 1 mOhm·cm2; and wherein a doping concentration of the base as well as the thickness of the engineered substrate are such that absorption of the engineered substrate is less than 20%, preferably less than 10%, and total area-normalized series resistance of the engineered substrate is less than 10 mOhm·cm2, preferably less than 1 mOhm·cm2.

Abstract: The present disclosure relates to a perovskite sheet that includes two outer layers, each including A?X?; and a first layer that includes BX2, where B is a first cation, A? is a second cation, X is a first anion, X? is a second anion, and the first BX2 layer is positioned between the two outer layers.

Abstract: A solar cell includes: a crystalline semiconductor substrate of a first conductivity type; a first semiconductor layer provided on a first region on one principal surface of the substrate; a second semiconductor layer provided on a second region on the one principal surface different from the first region; a first transparent electrode layer provided on the first semiconductor layer; and a second transparent electrode layer provided on the second semiconductor layer. The first semiconductor layer includes a first amorphous semiconductor layer of the first conductivity type and a first crystalline semiconductor part extending from the one principal surface toward the first transparent electrode layer. The second semiconductor layer includes a second amorphous semiconductor layer of a second conductivity type different from the first conductivity type.

Abstract: A sunlight concentrating device may include a quantum dot layer having a first surface and a second surface opposite to each other, a first glass layer in contact with the first surface of the quantum dot layer, and a second glass layer in contact with the second surface of the quantum dot layer, and further include a low-refractive layer provided in a predetermined region of the first surface and/or the second surface of the quantum dot layer. The low-refractive layer is patterned, and a refractive index of the low-refractive layer is smaller than a refractive index of the quantum dot layer. The low-refractive layer totally reflects photons, being permeated from the quantum dot layer into the glass layer(s), between the glass layer(s) and the quantum dot layer so that the photons can move within a section with no loss of light thereby overcoming the theoretical limit of light concentration.

Abstract: An avalanche photodiode (APD) sensor includes a photoelectric conversion region disposed in a substrate and that converts light incident to a first side of the substrate into electric charge, and a cathode region disposed at a second side of the substrate. The second side is opposite the first side. The APD sensor includes an anode region disposed at the second side of the substrate, a first region of a first conductivity type disposed in the substrate, and a second region of a second conductivity type disposed in the substrate. The second conductivity type is different than the first conductivity type. In a cross-sectional view, the first region and the second region are between the photoelectric conversion region and the second side of the substrate. In the cross-sectional view, an interface between the first region and the second region has an uneven pattern.

Abstract: A solar cell includes: a semiconductor substrate which includes a first principal surface and a second principal surface; a first semiconductor layer of the first conductivity type disposed above the first principal surface; and a second semiconductor layer of a second conductivity type disposed below the second principal surface. The semiconductor substrate includes: a first impurity region of the first conductivity type; a second impurity region of the first conductivity type disposed between the first impurity region and the first semiconductor layer; and a third impurity region of the first conductivity type disposed between the first impurity region and the second semiconductor layer. A concentration of an impurity in the second impurity region is higher than a concentration of the impurity in the third impurity region, and the concentration of the impurity in the third impurity region is higher than a concentration of the impurity in the first impurity region.

Abstract: A multijunction solar cell assembly and its method of manufacture including first and second discrete and different semiconductor solar cells which are electrically interconnected to form a four or five junction solar cell assembly.

Abstract: A method of patterning quantum dots, a device using same, and a system thereof are provided. By providing a base between a plurality of upper electrodes and a plurality of lower electrodes, coating a quantum dot solution on an upper surface of the base, and powering the upper electrodes and the lower electrodes to form an electric field between the upper electrodes and the lower electrodes, the quantum dot solution is gathered between the upper electrodes and the lower electrodes according to an electric field distribution. Subsequently, the quantum dot solution can be deposited into a film by evaporation of a solvent, thereby obtaining a patterned quantum dot thin film on the base.

Abstract: A photovoltaic (PV) device having a quantum dot sensitized interface includes a first conductor layer and a second conductor layer. At least one of the conductor layers is transparent to solar radiation. A quantum dot (nanoparticle) sensitized photo-harvesting interface comprises a photo-absorber layer, a quantum dot layer and a buffer layer, placed between the two conductors. The absorber layer is a p-type material and the buffer layer is an n-type material. The quantum dot layer has a tunable bandgap to cover infrared (IR), visible light and ultraviolet (UV) bands of solar spectrum.

Abstract: Optically-thin, quantum-structured solar cells incorporating III-V quantum wells or quantum dots have the potential to revolutionize the performance of photovoltaic devices. Enhanced spectral response characteristics have been widely demonstrated in both quantum well and quantum dot solar cells using a variety of different III-V materials. To fully leverage the extended spectral response of quantum-structured solar cells, new device designs are disclosed that can both maximize the current generating capability of the limited volume of narrow band gap material and minimize the unwanted carrier recombination that degrades the voltage output.

Abstract: A semiconductor device. In some embodiments, the semiconductor device includes a back gate layer; a buffer layer, on the back gate layer; a device quantum well layer, on the buffer layer; a cap layer, on the device quantum well layer; a top layer, on the cap layer; a first doped region of a first conductivity type, extending at least part-way through the device quantum well layer; a second doped region, of a second conductivity type, within the buffer layer; and a third doped region, of the second conductivity type extending from the top layer to the second doped region. The top layer may include a dielectric layer, and, in the dielectric layer, a plurality of conductive elements, including one or more dot gates, an ohmic contact, a bath gate, a supply gate, and a halo contact.

Abstract: A multijunction solar cell including an upper first solar subcell having a first band gap and positioned for receiving an incoming light beam; a second solar subcell disposed below and adjacent to and lattice matched with said upper first solar subcell, and having a second band gap smaller than said first band gap; wherein at least one of the solar subcells has a graded band gap throughout the thickness of at least a portion of the active layer.

Abstract: Methods of fabricating solar cell emitter regions with differentiated P-type and N-type region architectures, and resulting solar cells, are described. In an example a solar cell includes a first emitter region of a first conductivity type disposed on a first dielectric region, the first dielectric region disposed on a surface of a substrate. A second dielectric region is disposed laterally adjacent to the first and second emitter region. The second emitter region of a second, different, conductivity type is disposed on a third dielectric region, the third dielectric region disposed on the surface of the substrate, over the second dielectric region, and partially over the first emitter region. A first metal foil is disposed over the first emitter region. A second metal foil is disposed over the second emitter region.

Abstract: Disclosed herein are photonic materials. The photonic materials can comprise: a first layer comprising InxGa1-xN, wherein x is from 0 to 0.5; a second layer comprising ZnSnN2; and a third layer comprising InyGa1-yN, wherein y is from 0 to 0.5; wherein the second layer is disposed between and in contact with the first layer and the third layer, such that the second layer is sandwiched between the first layer and the third layer. In some examples, the photonic materials can be sandwiched between two or more barrier layers to form a quantum well.

Abstract: A multijunction solar cell including an upper first solar subcell having a first band gap and positioned for receiving an incoming light beam; a second solar subcell disposed directly below and adjacent to the upper first solar subcell, and having a second band gap smaller than said first band gap; wherein a light scattering layer is provided below the upper first solar subcell and adjacent to the upper first solar subcell for redirecting the incoming light to be scattered along longer path lengths into the second solar subcell.

Abstract: Methods of fabricating solar cell emitter regions using self-aligned implant and cap, and the resulting solar cells, are described. In an example, a method of fabricating an emitter region of a solar cell involves forming a silicon layer above a substrate. The method also involves implanting, through a stencil mask, dopant impurity atoms in the silicon layer to form implanted regions of the silicon layer with adjacent non-implanted regions. The method also involves forming, through the stencil mask, a capping layer on and substantially in alignment with the implanted regions of the silicon layer. The method also involves removing the non-implanted regions of the silicon layer, wherein the capping layer protects the implanted regions of the silicon layer during the removing. The method also involves annealing the implanted regions of the silicon layer to form doped polycrystalline silicon emitter regions.

Abstract: A method is provided that integrates a unique set of structural features for concealing self-powered sensor and communication devices in aesthetically neutral, or camouflaged, packages that include energy harvesting systems that provide autonomous electrical power to sensors, data processing and wireless communication components in the portable, self-contained packages. Color-matched, image-matched and/or texture-matched optical layers are formed over energy harvesting components, including photovoltaic energy collecting components. Optical layers are tuned to scatter selectable wavelengths of electromagnetic energy back in an incident direction while allowing remaining wavelengths of electromagnetic energy to pass through the layers to the energy collecting components below.

Abstract: Systems and method for analysing contaminants of a gas sample of natural gas are provided. An interrogation light beam propagates into a chamber of a multipass gas cell receiving the gas sample. The interrogation light beam has a wavelength controlled to alternately correspond to an absorption wavelength of H2S and an absorption wavelength of an additional gas contaminant. The additional gas contaminant may for example be CO2 or H2O. In some implementation, a single laser emitter may be used to generate the interrogation light beam at the H2S and CO2 wavelengths. In some implementations, two different laser emitters may be used to generate the interrogation light beam at the H2S and H2O wavelengths. A WMS detection scheme may be used.

Abstract: A method for manufacturing a solar cell, including the steps of: forming unevenness on both of main surfaces of a semiconductor substrate of a first conductivity type; forming a base layer on a first main surface of the semiconductor substrate; forming a diffusion mask on the base layer; removing the diffusion mask in a pattern; forming an emitter layer on the portion of the first main surface where the diffusion mask have been removed; removing the remaining diffusion mask; forming a dielectric film on the first main surface; forming a base electrode on the base layer; and forming an emitter electrode on the emitter layer. This provides a method for manufacturing a solar cell that can bring high photoelectric conversion efficiency while decreasing the number of steps.

Abstract: Semiconductor optoelectronic devices having a dilute nitride active layer are disclosed. In particular, the semiconductor devices have a dilute nitride active layer with a bandgap within a range from 0.7 eV and 1 eV. Photodetectors comprising a dilute nitride active layer have a responsivity of greater than 0.6 A/W at a wavelength of 1.3 ?m.

Abstract: The present application discloses a multi-junction tandem laser photovoltaic cell, comprising a photovoltaic cell stack and a bottom electrode and a top electrode electrically connected to a bottom and a top of the photovoltaic cell stack, respectively, wherein the photovoltaic cell stack comprises stacked N AlGaAs PN-junction sub-cells, and adjacent sub-cells are connected in series via a tunneling junction, in which N?2. The AlGaAs PN-junction sub-cells use an AlGaAs absorbing layer. The present application further discloses a method of making the multi-junction tandem laser photovoltaic cell. The present application uses AlGaAs as the absorbing layer of the multi-junction tandem cell to convert laser energy, which can effectively increase the open circuit voltage of the photovoltaic cell, thereby significantly improving the conversion efficiency of the photovoltaic cell.

Abstract: Provided is a method of manufacturing a semiconductor device. The method includes providing a substrate, forming uneven portions in a region of the substrate in which an electrode is to be formed, forming a precursor film formed of a two-dimensional material on the substrate on which the uneven portions are formed, forming a metal chalcogen film by performing a chalcogenation process on the formed precursor film, and forming the electrode on the formed metal chalcogen film.