Abstract: The present disclosure provides dual-function photovoltaic (PV) devices that generate electric current and have a colored surface or colored appearance. The PV devices may be angle insensitive and polarization independent. Such a dual-function PV device may have an ultra-thin photoactive layer (e.g., comprising an undoped amorphous silicon) with a thickness of ? about 50 nm. The PV device is configured to filter (transmit or reflect) a portion of an electromagnetic spectrum, providing a controllable and tunable color appearance. Such nanometer a-Si/organic hybrid cells are designed to transmit or reflect angle insensitive colors, electrically powering up to 2% to 3% or higher by efficient absorbed photon to charge conversion. In certain variations, the present disclosure further provides decorative power generating panels creating angle insensitive transmissive or reflective colors.

Abstract: An efficient solar cell and method of fabricating the same is disclosed. The solar cell includes an n-doped substrate layer. A p-doped buffer layer is disposed on the n-doped substrate layer. A quantum dot absorber stack is disposed on the buffer layer. The absorber stack includes at least one quantum dot layer and one p-doped spacer layer. A p-doped cap layer is disposed on the quantum dot absorber layer. The thickness of the quantum dot layer is less than an electron diffusion length from the depletion region formed by the n-doped substrate layer and the p-doped buffer layer. The quantum dot absorber layer allows for additional photo currents from two-photon absorption from the p-doped cap layer being exposed to a light source.

Abstract: An OLED is provided that includes a substrate; and an anode, a P-type organic semiconductor layer, an N-type organic semiconductor layer, and a cathode that are successively laminated on the substrate. An interface between the P-type organic semiconductor layer and the N-type organic semiconductor layer is a curved surface structure.

Abstract: The present invention provides a blue light compensation film and an OLED display. The blue light compensation film of the present invention effectively absorbs blue light with wavelength longer than blue wavelength and excite blue light by using a blue light upconversion luminescent material, and effectively improves color shift white OLED device caused by short lifespan of blue electroluminescent material to achieve blue light compensation of the white OLED device and solve the of yellowing in traditional OLED display with age. The OLED display of the present invention comprises the blue light compensation film to avoid color shift problem and provides good display quality.

Abstract: A solar cell and a method for manufacturing the same are disclosed. The solar cell includes a semiconductor substrate doped with impurities of a first conductive type, a front surface field region disposed at a front surface of the substrate and doped with impurities of the first conductive type at a concentration higher than those of the substrate, a tunnel layer disposed on a back surface of the substrate and formed of a dielectric material, an emitter region disposed at a first portion of a back surface of the tunnel layer and doped with impurities of a second conductive type opposite the first conductive type, and a back surface field region disposed at a second portion of the back surface of the tunnel layer and doped with impurities of the first conductive type at a concentration higher than those of the substrate.

Abstract: A compound semiconductor solar cell and a method of manufacturing the same are disclosed. The method for fabricating a compound semiconductor solar cell comprises forming a first mask layer on a front surface of a compound semiconductor layer of a second region which is a region other than a first region where the front electrode is to be formed; forming a seed metal layer on the front surface of the compound semiconductor layer of the first region and on the first mask layer of the second region; removing the seed metal layer over the first mask layer and the first mask layer; removing a part of the compound semiconductor layer of the second region from the front surface of the compound semiconductor layer by using the seed metal layer of the first region as a mask; forming a second mask layer on the compound semiconductor layer of the second region; forming an electrode metal layer on the seed metal layer not covered by the second mask layer; and removing the second mask layer.

Abstract: A multijunction solar cell includes an InGaAs buffer layer and an InGaAlAs grading interlayer disposed below, and adjacent to, the InGaAs buffer layer. The grading interlayer achieves a transition in lattice constant from one solar subcell to another solar subcell.

Abstract: Semiconductor devices including two-dimensional (2D) materials and methods of manufacturing the semiconductor devices are provided. A semiconductor device may include a semiconductor layer including layers of a 2D material, and an intercalation material between the layers of the 2D material. The semiconductor device may further include a first conductive layer on a first surface of the semiconductor layer and a second conductive layer on a second surface of the semiconductor layer that is opposite the first surface. A portion of the 2D material may have a first crystalline structure, and another portion of the 2D material may have a second crystalline structure that is different from the first crystalline structure. The 2D material may include a metal chalcogenide-based material.

Abstract: A photoelectric conversion device may include a substrate, a photoactive layer disposed on the substrate, and a first electrode and a second electrode respectively connected to corresponding edges of the photoactive layer. The photoactive layer may include a first oxide semiconductor layer on the substrate, and a plurality of quantum dot layers and a plurality of second oxide semiconductor layers that are alternately formed on the first oxide semiconductor layer.

Abstract: The invention discloses a perovskite solar cell and a method of fabrication thereof. The perovskite solar cell sequentially comprises a transparent electrode, a mesoporous P-I-N framework and a counter electrode from the bottom to top; the mesoporous P-I-N framework is composed of an n-type semiconductor layer, an insulating layer, and a p-type semiconductor layer in a sequentially stacked mode, and the n-type semiconductor layer, the insulating layer and the p-type semiconductor layer all comprise mesopores filled with a perovskite material. The preparation method sequentially includes preparing the mesoporous P-I-N framework on a transparent conductive substrate through a spin-coating method or a screen printing method, filling with the perovskite material and preparing the counter electrode layer.

Abstract: A photovoltaic conversion device (10) includes a semiconductor substrate (1), a passivation film (3), n-type amorphous semiconductor strips, p-type amorphous semiconductor strips (5p), and electrodes (7). The passivation film (3) is formed on one of the surfaces of the semiconductor substrate (1). The n- and p-type amorphous semiconductor strips are arranged alternately as viewed along an in-plane direction of the semiconductor substrate (1) (Y-axis direction). The p-type amorphous semiconductor strips (5p) have reduced-thickness regions (51) at some intervals as viewed along the length direction of the p-type amorphous semiconductor strips (5p) (X-axis direction). The n-type amorphous semiconductor strips have a similar structure. The electrodes (7) are provided on the p-type amorphous semiconductor strips (5p), but not in areas where the reduced-thickness regions (51) have a positive curvature r with respect to the length direction of the reduced-thickness regions (51).

Abstract: A photovoltaic device includes a first contact and a hybrid absorber layer. The hybrid absorber layer includes a chalcogenide layer and a semiconductor layer in contact with the chalcogenide layer. A buffer layer is formed on the absorber layer, and a transparent conductive contact layer is formed on the buffer layer.

Abstract: In manufacturing a crystalline silicon-based solar cell, a first intrinsic thin-film is formed on a conductive single-crystalline silicon substrate, and then a hydrogen plasma etching is performed. A second intrinsic thin-film is formed on the first intrinsic thin-film after the hydrogen plasma etching, and a conductive silicon-based thin-film is formed on the second intrinsic thin-film. The second intrinsic thin-film is formed by plasma-enhanced CVD with a silicon-containing gas and hydrogen being introduced into a CVD chamber. The amount of the hydrogen introduced into the CVD chamber during formation of the second intrinsic thin-film is 50 to 500 times an introduction amount of the silicon-containing gas.

Abstract: A compound photovoltaic cell includes a substrate, a first cell made of a first semiconductor material and formed on the substrate, a tunnel layer, and a second cell made of a second semiconductor material lattice mismatched with a material of the substrate, connected to the first cell via the tunnel layer, and disposed on an incident side with respect to the first cell, wherein band gaps of the first and the second cells become smaller from an incident side to a back side, and wherein the tunnel layer includes a p-type layer disposed on the incident side and a n-type layer disposed on the back side, the p-type layer being a p+-type (Al)GaInAs layer, the n-type layer being an n+-type InP layer, an n+-type GaInP layer having a tensile strain with respect to InP or n+-type Ga(In)PSb layer having a tensile strain with respect to InP.

Abstract: A semiconductor cell that allows thermally excited electron hole pairs to be harnessed as usable energy. The material bandgap and dopant levels of various layers allows for voltage potential and current to be created. The energy production results in a lowered temperature in the cell. Energy is transferred back to the cell in the form of heat from the surroundings via convection or conduction. Cell layout is a n n++-p++ p configuration and a module has multiple cells.

Abstract: A photovoltaic device includes a liquid-repelling layer between the edges of a first amorphous semiconductor layer and the edges of a second amorphous semiconductor layer. No such a liquid-repelling layer is provided between the first amorphous semiconductor layer and the second amorphous semiconductor layer, except between the edges of the first amorphous semiconductor layer and the edges of the second amorphous semiconductor layer. The semiconductor layer in the photovoltaic device is therefore precisely patterned.

Abstract: Under one aspect, a device is provided for use in luminescent imaging. The device can include a photonic superlattice including a first material, the first material having a first refractive index. The first material can include first and second major surfaces and first and second pluralities of features defined through at least one of the first and second major surfaces, the features of the first plurality differing in at least one characteristic from the features of the second plurality. The photonic superlattice can support propagation of a first wavelength and a second wavelength approximately at a first angle out of the photonic superlattice, the first and second wavelengths being separated from one another by a first non-propagating wavelength that does not selectively propagate at the first angle out of the photonic superlattice.

Abstract: The present technology relates to a solid-state image sensing device for preventing a reduction in light receiving sensitivity of an avalanche photodiode, an electronic device, and a method for manufacturing the solid-state image sensing device. A solid-state image sensing device includes an avalanche photodiode having a first region of a first conductive type, a second region of a second conductive type different from the first conductive type, and an avalanche region sandwiched between the first region and the second region, which extend in a thickness direction of a semiconductor substrate, and a film formed on at least one side of the semiconductor substrate and including a metal oxide film, a metal nitride film, or a mix crystal-based film of metal oxide film and metal nitride film. The present technology can be applied to CMOS image sensors, for example.

Abstract: A method of fabricating a visibly transparent, ultraviolet (UV) photodetector is provided. The method includes laying a first electrode onto a substrate surface, the first electrode being formed of a carbon-based, single-layer material. A block is patterned over an end of the first electrode and portions of the substrate surface. The block is formed of a visibly transparent material that is able to be deposited into the block at 75° C.-125° C. In addition, the method includes masking a section of the block and exposed sections of the first electrode. A second electrode is laid onto an unmasked section of the block with an end of the second electrode laid onto the substrate surface. The second electrode is formed of the carbon-based, single-layer material.

Abstract: A rear contact heterojunction solar cell and a fabricating method. The solar cell comprises a silicon substrate having a passivating layer and an intrinsic amorphous silicon layer. At a back side of the intrinsic amorphous silicon layer, an emitter layer and a base layer are provided. Interposed between these emitter and base layers is a separation layer comprising an electrically insulating material. This separation layer as well as the base layer and emitter layer may be generated by vapor deposition. Due to such processing, adjacent regions of the emitter layer and the separating layer and adjacent regions of the base layer and the separating layer partially laterally overlap in overlapping areas in such a way that at least a part of the separating layer is located closer to the substrate than an overlapping portion of the respective one of the emitter layer and the base layer.

Abstract: An apparatus for suppressing electron/hole recombination includes a photonic device that generates electron/hole pairs responsive to a light beam interacting with the photonic device. An orbital angular momentum (OAM) generation device is located to impart an orbital angular momentum to a light beam before the light beam interacts with the photonic device. The electron/hole pair recombination generated from an OAM imparted light beam is less than electron/hole pair recombination of a non-OAM imparted light beam.

Abstract: A perovskite composite structure is provided. The perovskite composite structure includes a light absorption layer and a sterically-hindered layer disposed in the periphery of the light absorption layer. The light absorption layer includes a perovskite material. The sterically-hindered layer includes a two-dimensional material.

Abstract: A photoelectric conversion material includes a germanane derivative having a composition represented by GeXMYHZ. M includes at least one of Ga and In. X?Y, X?Z>0, and X+Y=1 are satisfied. A solar cell includes: a first electrode having electrical conductivity; a second electrode having electrical conductivity; and a light-absorbing layer between the first electrode and the second electrode, the light-absorbing layer converting incident light into electric charge. The light-absorbing layer includes the photoelectric conversion material above.

Abstract: The present embodiments provide a transparent electrode having a laminate structure of: a first metal oxide layer having an amorphous structure and electroconductivity, a metal layer made of a metallic material containing silver or copper, a second metal oxide layer having an amorphous structure and electroconductivity, and a third metal oxide layer having an amorphous structure and continuity, stacked in this order.

Abstract: A multilayer encapsulant film having at least two layers includes a first layer comprising an encapsulant resin, and a second layer comprising an encapsulant resin and at least one down-converter, such as a rare-earth organometallic complex. The down-converter may be present in an amount of at least 0.0001 wt % based on the total weight of the encapsulant film. Further layers of a multilayer encapsulant film may or may not include a down-converter. Preferably, a multilayer encapsulant film contains at least one layer with at least one down-converter and at least one layer without a down-converter. Such multilayer down-converting films may be used in an electronic device, such as a PV module.

Abstract: A method for fabricating a solar cell is provided and has steps of: providing a transparent conductive substrate; forming a porous supporting layer on the transparent conductive substrate; forming a porous conductive counter electrode layer on the porous supporting layer, where the porous conductive counter electrode layer includes a carrier blocking layer and a conductive layer, and the carrier blocking layer is between the porous supporting layer and the conductive layer; and providing a light-absorbing material penetrating from the porous conductive counter electrode layer. The light-absorbing material fills within the porous supporting layer through a plurality of pores in the porous conductive counter electrode layer.

Abstract: Disclosed examples include lateral photovoltaic sensors and systems with one or more semiconductor structures individually including a lateral sensor face to receive photons of a given wavelength, and an extended lateral junction region having an effective junction distance greater than 5 times an absorption depth for the semiconductor structure that corresponds to the given wavelength, to facilitate high current transfer ratios for use in low-noise, high-efficiency power supply applications as well as optically isolated data transfer or photon detector applications.

Abstract: Provided are a photoelectric conversion element capable of enhancing characteristics and reliability more than ever before and a method for manufacturing the photoelectric conversion element. The photoelectric conversion element includes a base including a semiconductor substrate, a first i-type semiconductor film placed on a portion of a surface of the semiconductor substrate, a first conductivity-type semiconductor film placed on the first i-type semiconductor film, a second i-type semiconductor film placed on another portion of the surface thereof, and a second conductivity-type semiconductor film placed on the second i-type semiconductor film; an electrode section including a first electrode layer placed on the first conductivity-type semiconductor film and a second electrode layer placed on the second conductivity-type semiconductor film; and a reflective section placed in a gap region A interposed between the first electrode layer and the second electrode layer.

Abstract: Provided are a photoelectric conversion element including a first electrode having a photosensitive layer including a light absorber on a conductive support and a second electrode, in which the light absorber includes a compound having a perovskite-type crystal structure having an organic cation represented by Formula (IA) below, a cation of a metallic atom, and an anion that is an anionic atom or atomic group, a solar cell, and a method for manufacturing a photoelectric conversion element, including bringing a layer in which a photosensitive layer is to be formed into contact with liquid including the above-described compound. [RA—NH2(H+)]1-n{[(RB)n2-L-NH2](H+)}n??Formula (IA) in the formula, RA represents a specific group such as an alkyl group. RB represents NR1R2 or (NR1R2R3)+, and R1 to R3 represent a hydrogen atom or a substituent. L represents a linking group. n2 represents an integer of 1 or more. Here, (RB)n2-L is a group different from RA. n represents a numerical value satisfying 0<n<1.00.

Abstract: Described herein is an apparatus and method used to provide power or photovoltaic functionality to a display or device containing a display without impacting the visual perception of the display. The wavelength-selective photovoltaic (WPV) element is visibly transparent, in that it absorbs selectively around the visible emission (or reflection) peaks generated by the display. The photovoltaic material is able to cover a portion or the entire surface area of the display, without substantially blocking or perceptually impacting the emission (or reflection) of content from the display. The incident light that is absorbed by the photovoltaic element is then converted into electrical energy to provide power to the device, for example.

Abstract: A diffuser is provided with a recess-protrusion structure formed on a plane. When a z-axis is defined as a normal to the plane, an x-axis is defined on the plane, the x-axis is divided into plural intervals, Snx represents length of an interval nx, Sx-max and Sx-min represent the maximum and the minimum of Snx, respectively, the relationship 2<Sx-max/Sx-min holds, Snx varies on a random basis between Sx-min and Sx-max, in an xz cross section, a recess portion and a protrusion portion are formed on each of adjacent intervals along the x-axis, respectively, and when dznx represents a difference between the maximum and the minimum of z coordinate of the recess-protrusion structure in the interval nx in the xz cross section, Anx represents a ratio between dznx and Snx, Anx-max and Anx-min represent the maximum and the minimum of Anx, the relationship Ax-max/Ax-min<1.3 holds.

Abstract: A solar cell having n-type and p-type interdigitated back contacts (IBCs), which cover the entire back surface of the absorber layer. The spatial separation of the IBCs is in a direction perpendicular to the back surface, thus providing borderless contacts having a zero-footprint separation. As the contacts are on the back, photons incident on the cell's front surface can be absorbed without any shadowing.

Abstract: Inverted polymer solar cell comprising: an electron contact layer; a cathodic buffer layer; an active layer comprising at least one ?-conjugated polymer and at least one organic electron acceptor compound; an anodic buffer layer; a hole contact layer; wherein the cathodic buffer layer comprises zinc oxide and/or titanium dioxide and at least one interfacial agent selected from optionally substituted C7-C21 aromatic carboxylic acids or salts thereof. Such polymer solar cells have improved performance in terms of high charge mobility, high transparency, high efficiency and high chemical stability, which can be produced on a large industrial scale with a high surface area. A process for producing the same is also provided.

Abstract: The disclosure describes multi-junction solar cell structures that include two or more graded interlayers.

Abstract: A multijunction solar cell includes an upper first solar subcell, a second solar subcell adjacent to the first solar subcell, a third solar subcell adjacent to the second solar subcell, and a graded interlayer adjacent to the third solar subcell. The graded interlayer has a band gap that is greater than the band gap of the third solar subcell and is composed of a compositionally step-graded series of (InxGa1-x)yAl1-yAs layers with monotonically changing lattice constant, with x and y having respective values such that the band gap of the graded interlayer remains constant throughout its thickness, and wherein 0<x<1 and 0<y<1. A fourth solar subcell is adjacent to the graded interlayer and is lattice mismatched with respect to the third solar subcell. The graded interlayer provides a transition in lattice constant from the third solar subcell to the fourth solar subcell. A lower fifth solar subcell is adjacent to the fourth solar subcell.

Abstract: A device for direct X-ray detection (516) comprises a plurality of substantially parallel conductive channels (501) separated from one another by a quantum dot material (510), thereby forming a composite material layer (517). The parallel conductive channels (501) are electrically connected to source and drain electrodes (503 504a) which enable a flow of electrical current through the conductive channels (501). The quantum dot material (510) generates electron hole pairs upon exposure to incident electromagnetic radiation and the thus generated charge results in an electric field which causes a change in electrical current passing through at least one of the conductive channels (501). The change in electrical current is indicative of one or more of the presence and magnitude of the incident electromagnetic radiation.

Abstract: A photovoltaic device, particularly a solar cell, comprises an interface between a layer of Group III-V material and a layer of Group IV material with a thin silicon diffusion barrier provided at or near the interface. The silicon barrier controls the diffusion of Group V atoms into the Group IV material, which is doped n-type thereby. The n-type doped region can provide the p-n junction of a solar cell in the Group IV material with superior solar cell properties. It can also provide a tunnel diode in contact with a p-type region of the III-V material, which tunnel diode is also useful in solar cells.

Abstract: Photovoltaic structures having multiple absorber layers separated by a diffusion barrier are provided. In one aspect, a method of forming an absorber on a substrate includes: depositing a first layer of light absorbing material on the substrate; depositing a diffusion barrier; depositing a second layer of light absorbing material on the diffusion barrier, wherein the first layer of light absorbing material has a different band gap from the second layer of light absorbing material; and annealing the absorber, wherein the diffusion barrier prevents diffusion of elements between the first layer of light absorbing material and the second layer of light absorbing material during the annealing. A solar cell and method for formation thereof are also provided.

Abstract: This disclosure relates to a solar cell assembly structure for supporting a concentrator photovoltaic cell comprising a semiconducting structure and a diode, wherein the semiconducting structure comprises a first semiconducting region at least a part of which for placing the concentrator photovoltaic cell structure, and a second semiconducting region for realizing the diode within or on the second semiconducting region and wherein the part of the first semiconducting region for placing the concentrator photovoltaic cell structure and the second semiconducting region are not vertically overlapping.

Abstract: A photovoltaic cell incorporating a semiconductor element (10) composed entirely of a single conductivity type. A biasing agent (26) having a work function different from that of the semiconductor element overlies a face of the element and produces a band bending and thus an electric field in a space charge region. Electrodes are in contact with the semiconductor element within the space charge region. Carriers generated by light absorbed in the semiconductor element are accelerated toward the electrodes by the field.

Abstract: A photovoltaic device and method include forming a plurality of pillar structures in a substrate, forming a first electrode layer on the pillar structures and forming a continuous photovoltaic stack including an N-type layer, a P-type layer and an intrinsic layer on the first electrode. A second electrode layer is deposited over the photovoltaic stack such that gaps or fissures occur in the second electrode layer between the pillar structures. The second electrode layer is wet etched to open up the gaps or fissures and reduce the second electrode layer to form a three-dimensional electrode of substantially uniform thickness over the photovoltaic stack.

Abstract: A solar cell system includes a solar cell that includes a first electrode, a second electrode that faces the first electrode, and a light absorbing layer that is located between the first electrode and the second electrode, and converts light into charges; a power supply that applies voltage between the first electrode and the second electrode; and a voltage controller. The light absorbing layer contains a compound having a perovskite crystal structure represented by AMX3 where A represents a monovalent cation, M represents a divalent cation, and X represents a halogen anion. The voltage controller controls the voltage of the power supply so that during a first period of non-power generation, an electric current of 1 ?A/cm2 or more and 100 ?A/cm2 or less flows in the light absorbing layer in a direction opposite to a direction in which an electric current flows during power generation.

Abstract: A photoelectric conversion device includes a crystalline semiconductor substrate having a first surface and a second surface and a first amorphous semiconductor layer formed over the first surface of the crystalline semiconductor substrate. An interface between the crystalline semiconductor substrate and the first amorphous semiconductor layer is an oxidized interface containing oxygen having a concentration of 1×1021/cm3 or greater. The first amorphous semiconductor layer includes a high-oxygen-concentration region having an oxygen concentration of 1×1020/cm3 or greater and 1×1021/cm3 or less within a range of 5 nm or less from the oxidized interface.

Abstract: Photovoltaic devices such as solar cells, hybrid solar cell-batteries, and other such devices may include an active layer disposed between two electrodes, the active layer having perovskite material and other material such as mesoporous material, interfacial layers, thin-coat interfacial layers, and combinations thereof. The perovskite material may be photoactive. The perovskite material may be disposed between two or more other materials in the photovoltaic device. Inclusion of these materials in various arrangements within an active layer of a photovoltaic device may improve device performance. Other materials may be included to further improve device performance, such as, for example: additional perovskites, and additional interfacial layers.

Abstract: A multi-junction photoelectric conversion device includes, in the following order from a light-receiving side: a first photoelectric conversion unit; an intermediate layer; and a second photoelectric conversion unit. The first photoelectric conversion unit includes: a first light absorbing layer comprising a perovskite-type crystal structure photosensitive material; a first charge transport layer on the light-receiving side of the first light absorbing layer; and a second charge transport layer on a rear side of the first light absorbing layer. The second charge transport layer is in contact with the intermediate layer. The second photoelectric conversion unit includes: a second light absorbing layer that is a crystalline silicon substrate; and a first conductive semiconductor layer that is in contact with the intermediate layer.

Abstract: Semiconductor light emitting diodes (LEDs) formed as (Al)GaN-based nanowire structures have a first semiconductor layer, a second semiconductor layer, and a thin metallic layer fabricated therebetween. The structures, operating in the deep ultraviolet (UV) spectral range, exhibit high photoluminescence efficiency at room temperature. The structures may be formed of an epitaxial metal tunnel junction operating as a reflector that enhances carrier transport to and from the semiconductor alloy layers, capable of producing external quantum efficiencies at least one order of magnitude higher than convention devices.

Abstract: A multi-junction solar cell comprising a high-crystalline silicon solar cell and a high-crystalline germanium solar cell. The high-crystalline silicon solar including a first p-doped layer and a n+ layer and the high-crystalline germanium solar cell including a second p layer and a heavily doped layer. The multi-junction solar cell can also be comprised of a heavily doped silicon layer on a non-light receiving back surface of the high-crystalline germanium solar cell and a tunnel junction between the high-crystalline silicon solar cell and the high-crystalline germanium solar cell.

Abstract: Solar cells with silicon oxynitride dielectric layers and methods of forming silicon oxynitride dielectric layers for solar cell fabrication are described. For example, an emitter region of a solar cell includes a portion of a substrate having a back surface opposite a light receiving surface. A silicon oxynitride (SiOxNy, 0<x, y) dielectric layer is disposed on the back surface of the portion of the substrate. A semiconductor layer is disposed on the silicon oxynitride dielectric layer.

Abstract: Provided is a hydrogen concentration measuring device capable of measuring with high accuracy a hydrogen concentration over an extensive range by a simple configuration. The device includes: a sensor chip which detects the electric resistance of a sensing film; an optical measurement unit which detects the transmitted light intensity of the film; and a controller. The controller performs measurement processing such that a hydrogen concentration in the gas atmosphere is measured based on the detected electric resistance in a first measurement range and based on the detected transmitted light intensity in a second measurement range and is determined so as to reduce a difference between the hydrogen concentration based on the detected electric resistance and the hydrogen concentration based on the detected transmitted light intensity in the overlap of the first measurement range and the second measurement range.

Abstract: Methods for growing and using large-grain templates are provided. According to an aspect of the invention, a method includes depositing a small-grain layer of a semiconductor material; treating the small-grain layer such that the small-grain layer becomes a large-grain layer; and growing an epitaxial layer of the semiconductor material on the large-grain layer. A ratio of an average grain size of the small-grain layer to a thickness of the small-grain layer is less than 1.0, and a ratio of an average grain size of the large-grain layer to a thickness of the large-grain layer is greater than 1.5.