Abstract: Solar cells having emitter regions composed of wide bandgap semiconductor material are described. In an example, a method includes forming, in a process tool having a controlled atmosphere, a thin dielectric layer on a surface of a semiconductor substrate of the solar cell. The semiconductor substrate has a bandgap. Without removing the semiconductor substrate from the controlled atmosphere of the process tool, a semiconductor layer is formed on the thin dielectric layer. The semiconductor layer has a bandgap at least approximately 0.2 electron Volts (eV) above the bandgap of the semiconductor substrate.

Abstract: A flexible double-junction solar cell includes a flexible substrate including a lower electrode layer, an InGaAs solar cell disposed to be in contact with the lower electrode layer of the flexible substrate, and a GaAs solar cell disposed on the InGaAs solar cell and connected to the InGaAs solar cell in series. The GaAs solar cell includes a metal nanodisk array disposed on a lower surface thereof and a void array, aligned with the metal nanodisk array, is disposed below the metal nanodisk array.

Abstract: A solar cell including a base region, a back surface field layer and a delta doping layer positioned between the base region and the back surface field layer.

Abstract: An imaging element includes a first electrode, a second electrode, and a light receiving layer between the first electrode and the second electrode to receive incident light from the second electrode. The second electrode includes an indium-tin oxide layer which includes at least one of silicon or silicon oxide.

Abstract: An optoelectronic device including a semiconductor substrate that is optionally doped with a first type of conductivity; a first semiconductor region that is electrically connected to the substrate, doped with the first type of conductivity or a second opposite type of conductivity and more strongly doped than the substrate; a first set of first light-emitting diodes resting on the first semiconductor region, the first light-emitting diodes comprising wire-like, conical or frustoconical semiconductor elements; and a conductive portion in contact with the first semiconductor region.

Abstract: A glass building material according to the present disclosure includes: a first photovoltaic string of a bifacial light-receiving type which has a shape extending in one direction; a second photovoltaic string of a bifacial light-receiving type which is arranged next to the first photovoltaic string in a width direction, and which has a shape extending in the one direction; a first glass substrate which is configured to cover one surface of the first photovoltaic string and one surface of the second photovoltaic string; and a reflective film which is arranged on at least part of another surface side of the first photovoltaic string and another surface side of the second photovoltaic string, which has a transmittance higher than a reflectance in a visible light region, and which has a reflectance higher than a transmittance in a near-infrared region.

Abstract: A method for fabricating a multifunctional composite panel is disclosed. The method can include forming a plurality of structural layers, and forming a plurality of photovoltaic layers adjacent the plurality of structural layers. Forming the plurality of structural layers can include forming alternating layers of a conductive organic material and an inorganic material. Forming the alternating layers can include forming a first layer from the conductive organic material, and forming a second layer adjacent the first layer from the inorganic material. The multifunctional composite panel can have a thickness of from about 1 mm to about 30 mm.

Abstract: The present specification relates to a heterocyclic compound and an organic solar cell including the same.

Abstract: Device structures, apparatuses, and methods are disclosed for photovoltaic cells that may be a single junction or multijunction solar cells, with at least as first layer comprising a group-IV semiconductor in which part of the cell comprises a second layer comprising a III-V semiconductor or group-IV semiconductor having a different composition than the group-IV semiconductor of the first layer, such that a heterostructure is formed between the first and second layers.

Abstract: Solar cell stack comprising III-V semiconductor layers, which includes a first subcell having a first band gap and a first lattice constant and which includes a second subcell having a second band gap and a second lattice constant, and which includes an intermediate layer sequence disposed between the two solar cells. The intermediate layer sequence including a first barrier layer and a first tunnel diode and a second barrier layer, and the layers being arranged in the specified order. The tunnel diode includes a degenerate n+ layer having a third lattice constant and a degenerate p+ layer having a fourth lattice constant, the fourth lattice constant being smaller than the third lattice constant, and the first band gap being smaller than the second band gap, and the p+ layer having a different material composition than the n+ layer.

Abstract: Disclosed herein is electrode comprising a current collector comprising a conductor layer having at least a first surface; and elongated metal carbide nanostructures extending from the first surface; and a carbonaceous energy storage media disposed on the first surface and in contact with the elongated metal carbide nanostructures. Disclosed herein too is an ultracapacitor comprising at least one electrode comprising a current collector comprising a conductor layer having at least a first surface; and elongated metal carbide nanostructures extending from the first surface; and a carbonaceous energy storage media disposed on the first surface and in contact with the elongated metal carbide nanostructures.

Abstract: The present invention relates to a multi-layer material comprising an assembly of layers, called “front layers”, capable of forming a front photovoltaic cell, and an assembly of layers, called “rear layers”, capable of forming a rear photovoltaic cell, wherein the front layer assembly and the rear layer assembly are electrically insulated by an insulating layer of epitaxial material.

Abstract: A method of fabricating a solar cell is disclosed. The method can include forming a dielectric region on a surface of a solar cell structure and forming a metal layer on the dielectric layer. The method can also include configuring a laser beam with a particular shape and directing the laser beam with the particular shape on the metal layer, where the particular shape allows a contact to be formed between the metal layer and the solar cell structure.

Abstract: According to an aspect of the present invention, there is provided a compound semiconductor solar cell, comprising: a light absorbing layer comprising a compound semiconductor; a first electrode positioned on a front surface of the light absorption layer; a first contact layer positioned between the light absorbing layer and the first electrode; a second electrode positioned on a rear surface of the light absorbing layer and having a sheet shape; and a second contact layer positioned between the light absorbing layer and the second electrode. The second contact layer is partially formed on the rear surface of the light absorbing layer on the projection surface, and the second electrode includes a first portion in direct contact with the second contact layer and a second portion located between the first portions.

Abstract: A visibly transparent luminescent solar concentrator (LSC) is disclosed. The LSC includes a transparent substrate having at least one edge surface. A dye layer is coupled to the substrate, the dye layer having a peak absorption wavelength outside the visible band, the dye layer being configured to re-emit light at a peak emission wavelength outside the visible band, at least a portion of the re-emitted light being waveguided to the edge surface of the substrate. A photovoltaic device is coupled to the edge surface of the transparent substrate, the photovoltaic device being configured to absorb light at the peak emission wavelength and generate electrical energy.

Abstract: A method comprises forming an image sensor adjacent to a first side of a substrate, thinning a second side of the substrate, performing a halogen treatment on the second side of the substrate and forming a backside illumination layer on the second side of the substrate.

Abstract: A photochemical electrode includes: an optical absorption layer; a catalyst layer for oxygen evolution reaction over the optical absorption layer; and a conducting layer over the catalyst layer. A valance band maximum of the catalyst layer is higher than a valance band maximum of the optical absorption layer. A work function of the conducting layer is larger than a work function of the catalyst layer.

Abstract: A solar cell includes a semiconductor substrate, a tunneling layer on one surface of the semiconductor substrate, a first conductive type area on the tunneling layer, a second conductive type area on the tunneling layer such that the second conductive type area is separated from the first conductive type area, and a barrier area interposed between the first conductive type area and the second conductive type area such that the barrier area separates the first conductive type area from the second conductive type area.

Abstract: Silver-containing absorbers for photovoltaic devices and techniques for fabrication thereof are provided. In one aspect, a method of forming an ink includes: mixing a silver halide and a solvent to form a first solution; mixing a metal, sulfur, and the solvent to form a second solution; combining the first solution and the second solution to form a precursor solution; and adding constituent components for an absorber material to the precursor solution to form the ink. Methods of forming an absorber film, a photovoltaic device, and the resulting photovoltaic device are also provided.

Abstract: A multijunction solar cell assembly and its method of manufacture including first and second discrete and different semiconductor body subassemblies which are electrically interconnected to form a five junction solar cell, each semiconductor body subassembly including first, second, third and fourth lattice matched subcells; wherein the average band gap of all four cells in each subassembly is greater than 1.44 eV.

Abstract: A lithium ion battery electrode includes silicon nanowires used for insertion of lithium ions and including a conductivity enhancement, the nanowires growth-rooted to the conductive substrate.

Abstract: A detector array for detecting backscattered light of a LIDAR system includes an optical waveguide and a detector unit. The optical waveguide includes a light incoupling surface, which is formed by at least a portion of a circumferential surface of the optical waveguide for coupling-in the backscattered light of the LIDAR system, and a light outcoupling surface, which is formed by a cross-sectional surface of the optical waveguide on an axial end of the optical waveguide, and furthermore a luminescent material, which is introduced into the interior of the optical waveguide and configured to emit light re-emitted into a wavelength range of a LIDAR system due to luminescence. The detector unit is situated on the light outcoupling surface of the optical waveguide for the detection of at least a portion of the re-emitted light.

Abstract: Optically transmissive UV solar cells may be coupled to glass substrates, for example windows, in order to generate electricity while still providing suitable optical behavior for the window. The UV solar cells may be utilized to power electrochromic components coupled to the window to adjust or vary the transmissivity of the window. The UV solar cells may utilize a Schottky ZnO/ZnS heterojunction.

Abstract: A growth structure having a lattice transition under a release layer is used as a seed crystal for growth of optoelectronic devices. The optoelectronic device can be a single- or multi-junction photovoltaic device. The release layer can be selectively removed in an epitaxial lift-off (ELO) process to separate the optoelectronic device from the growth structure and leave the region with the lattice transition intact to reuse the growth structure to grow additional devices. A manufacturing method is described that includes providing a growth structure having a substrate and a lattice transition from a first lattice constant to a second lattice constant, depositing a release layer on the growth structure, depositing on the release layer an epitaxial layer having a lattice constant that matches the second lattice and including an optoelectronic device, and removing the release layer to separate the epitaxial layer and the optoelectronic device from the growth structure.

Abstract: Methods of fabricating solar cell emitter regions with differentiated P-type and N-type architectures and incorporating dotted diffusion, and resulting solar cells, are described. In an example, a solar cell includes a substrate having a light-receiving surface and a back surface. A first polycrystalline silicon emitter region of a first conductivity type is disposed on a first thin dielectric layer disposed on the back surface of the substrate. A second polycrystalline silicon emitter region of a second, different, conductivity type is disposed on a second thin dielectric layer disposed in a plurality of non-continuous trenches in the back surface of the substrate.

Abstract: An n-type low-doped region and a first main-surface side highly doped region, which has an n-type dopant concentration higher than that in the n-type low-doped region, are provided in an n-type crystalline silicon substrate. The first main-surface side highly doped region is arranged between the n-type low-doped region and a p-type amorphous silicon layer.

Abstract: A method and apparatus directed to busbar components for photovoltaic modules.

Abstract: The present disclosure provides a multijunction solar cell comprising: an upper solar subcell having an indirect band gap semiconductor emitter layer composed of greater than 0.7 but less than 1.0 mole fraction aluminum and a base layer, the emitter layer and the base layer forming a heterojunction solar subcell; and a lower solar subcell disposed beneath the upper solar subcell, wherein the lower solar subcell has an emitter layer and a base layer forming a photoelectric junction. In some embodiments, the emitter layer of the upper solar subcell is an n-type AlxGa1-xAs layer with 0.7<x<1.0 and having a band gap of greater than 1.85 eV.

Abstract: A photovoltaic device includes a crystalline substrate having a first dopant conductivity, an interdigitated back contact and a front surface field structure. The front surface field structure includes a crystalline layer formed on the substrate and a noncrystalline layer formed on the crystalline layer. The crystalline layer and the noncrystalline layer are doped with dopants having an opposite dopant conductivity from that of the substrate. Methods are also disclosed.

Abstract: A multijunction solar cell and its method of fabrication, including an upper and a lower solar subcell each having an emitter layer and a base layer forming a photoelectric junction; a near infrared (NIR) wideband reflector layer disposed below the upper subcell and above the lower subcell for reflecting light in the spectral range of 900 to 1050 nm which represents unused and undesired solar energy and thereby reducing the overall solar energy absorptance in the solar cell and providing thermodynamic radiative cooling of the solar cell when deployed in space outside the atmosphere.

Abstract: The present invention provides a photo-electrochemical (PEC) cell electrode having a surface portion and a bulk portion composed of the same material, wherein at least one of the bulk portion and the surface portion of the electrode is doped with at least one dopant, and wherein said doping is non-uniform along an axis perpendicular to the surface portion. The non-uniform doping can include different concentrations and/or types of the dopants in the bulk portion and in the surface portion of the electrode. There is further provided a PEC cell comprising said electrode and an electrolyte, wherein the surface portion of the electrode faces the electrolyte.

Abstract: A method and device for carrying out a chemical reaction, by supplying to the chemical reaction energy from an electron- and, optionally, photon-containing energy wave that is induced in one or more aggregated molecular ensembles, wherein the emission of which is stimulated from the ensembles. Emission is stimulated from the ensembles by a wide variety of energy inputs, and energy derived from this electron and/or photon energy wave is advantageously used as an energy source to assist chemical reduction reactions.

Abstract: Provided is a photoelectric conversion element including: a first electrode; a hole blocking layer; an electron transport layer; a hole transport layer; and a second electrode, wherein the hole blocking layer includes a metal oxide including a titanium atom and a niobium atom.

Abstract: Discussed is a solar cell includes a semiconductor substrate, a conductive type region including a first conductive type region and a second conductive type region formed on one surface of the semiconductor substrate, an electrode including a first electrode and a second electrode, wherein the first electrode is connected to the first conductive type region and the second electrode is connected to the second conductive type region, and a passivation layer formed on the conductive type region. The passivation layer includes at least one of silicon nitride and silicon carbide.

Abstract: A solar cell includes a first processed optically transparent (transparent) substrate and a second processed transparent substrate, wherein at least one of the first processed transparent substrate and second processed transparent substrate includes at least one electrode thereon. At least one solar absorber material substrate having a first side and a second side is between the first and second processed transparent substrates. The solar absorber material substrate is bonded by an adhesiveless bonded interface on both the first side and the second side to the first and second processed transparent substrates.

Abstract: A method of manufacturing a multijunction solar cell having an upper first solar subcell composed of a semiconductor material having a first band gap; a second solar subcell adjacent to said first solar subcell and composed of a semiconductor material having a second band gap smaller than the first band gap and being lattice matched with the upper first solar subcell; a third solar subcell adjacent to said second solar subcell and composed of a semiconductor material having a third band gap smaller than the second band gap and being lattice matched with the second solar subcell; a graded interlayer adjacent to the third solar subcell; and a fourth solar subcell adjacent to said graded interlayer and composed of a semiconductor material having a fourth band gap smaller than the third band gap and being lattice mismatched with respect to the third solar subcell; wherein the fourth subcell has a direct bandgap of greater than 0.75 eV.

Abstract: A solar cell for collecting solar radiation can include a barrier layer such as a dielectric barrier layer and a heterostructure including a first light absorbing layer and at least a second light absorbing layer. A method for forming the solar cell can include forming a sacrificial layer on a support substrate and forming the barrier layer on the sacrificial layer. The barrier layer is formed to have a strain gradient through its thickness. The heterostructure is attached to the barrier layer and the sacrificial layer is removed, thereby separating the barrier layer and the heterostructure from the support substrate. During the removal of the sacrificial layer, the strain gradient causes the barrier layer and heterostructure, to roll, curl, or spiral, thereby resulting in a radially stacked heterostructure that provides a light concentrating optical cavity having multiple light absorbing layers with different band gaps.

Abstract: Thin amorphous or partially crystalline lithium-containing and conducting sulfide or oxysulfide glass electrode/separator members are prepared from a layer of molten glass or of glass powder. The resulting glass films are formed to lie face-to face against a lithium metal anode or a sodium metal anode and a cathode and to provide for good transport of lithium ions between the electrodes during repeated cycling of the cell and to prevent shorting of the cell by dendrites growing from the lithium metal or sodium metal anode.

Abstract: A method for forming a photovoltaic device includes providing a substrate. A layer is deposited to form one or more layers of a photovoltaic stack on the substrate. The depositing of the amorphous layer includes performing a high power flash deposition for depositing a first portion of the layer. A low power deposition is performed for depositing a second portion of the layer.

Abstract: Organic photoelectric conversion element has a first electrode, a photoelectric conversion layer, and a second electrode. The photoelectric conversion layer has a first organic layer that contains a first organic semiconductor containing principally a p-type organic semiconductor, a second organic layer that contains a second organic semiconductor containing principally an n-type organic semiconductor, and an intermediate layer that contains the first organic semiconductor and the second organic semiconductor. The second organic layer is disposed at a side of the second electrode relative to the first organic layer. The intermediate layer is between the first organic layer and the second organic layer and reaches each of these layers. The thickness of the second organic layer is greater than the sum of the thicknesses of the first organic layer and intermediate layer.

Abstract: A solar cell comprising: a semiconductor substrate; a metallization paste on a surface of the semiconductor substrate; and a tunneling layer between the substrate surface and the metallization paste.

Abstract: A manufacturing method of a solar cell is discussed. The manufacturing method of the solar cell includes forming a tunneling layer on one surface of a semiconductor substrate, forming a semiconductor layer on the tunneling layer, doping the semiconductor layer with a first conductive dopant and a second conductive dopant to form a first conductive semiconductor layer and a second conductive semiconductor layer, and diffusing hydrogen into the first and second conductive semiconductor layers to hydrogenate the first and second conductive semiconductor layers.

Abstract: A wavelength conversion substrate according to one aspect of the present invention includes: a first substrate having an optical transparency; and a light modulation unit provided on one surface of the first substrate and configured to modulate a spectrum of incident light in accordance with a polarization state of the incident light. The light modulation unit includes: a plurality of metallic structures periodically provided at intervals from one another on one surface of the first substrate and configured to exhibit plasmon resonance due to incident light; and a plurality of wavelength conversion units provided so that at least some wavelength conversion units are adjacent to the plurality of metallic structures and comprising a wavelength converting material configured to emit light in a wavelength band different from a wavelength band of the incident light.

Abstract: A solar module (and its fabrication method) is presented where a supporting substrate comprises a network of finger traces connected to bus bars. Photo-active layer portions and upper electrode layer portions are deposited on the substrate thereby forming a network of cells. The cells are connected in series by connecting the bus bar of one cell to the upper electrode layer of the adjacent cell, and the bus bars of two adjacent cells are coupled through a bypass element for protecting the cell array.

Abstract: The present invention provides a method of manufacturing a solar cell, the method including: a process of forming a first semiconductor layer on an upper surface of a semiconductor wafer and forming a second semiconductor layer, having a polarity different from a polarity of the first semiconductor layer, on a lower surface of the semiconductor wafer; a process of forming a first transparent conductive layer on an upper surface of the first semiconductor layer to externally expose a portion of the first semiconductor layer and forming a second transparent conductive layer on a lower surface of the second semiconductor layer to externally expose a portion of the second semiconductor layer; and a plasma treatment process on at least one of the first transparent conductive layer and the second transparent conductive layer, wherein the plasma treatment process includes a process of removing the externally exposed portion of the first semiconductor layer and the externally exposed portion of the second semiconduct

Abstract: Methods of fabricating solar cell emitter regions with differentiated P-type and N-type regions architectures, and resulting solar cells, are described. In an example, a solar cell can include a substrate having a light-receiving surface and a back surface. A first doped region of a first conductivity type, wherein the first doped region is disposed in a first portion of the back surface. A first thin dielectric layer disposed over the back surface of the substrate, where a portion of the first thin dielectric layer is disposed over the first doped region of the first conductivity type. A first semiconductor layer disposed over the first thin dielectric layer. A second doped region of a second conductivity type in the first semiconductor layer, where the second doped region is disposed over a second portion of the back surface. A first conductive contact disposed over the first doped region and a second conductive contact disposed over the second doped region.

Abstract: There is provided a photovoltaic device that comprises a photoactive region, the photoactive region comprising a perovskite material of general formula A1?xA?xBX3?yX?y wherein A is a formamidinium cation ((HC(NH2)2)+), A? is a caesium cation (Cs+), B is at least one divalent inorganic cation, X is iodide and X? is bromide, and x is greater than 0 and equal to or less than 0.4 and y is greater than 0 and less than or equal to 3. There is also provided a method of producing a photovoltaic device comprising a photoactive region comprising the perovskite material, and formulations for use in the formation of the perovskite material.

Abstract: A solar cell can have a first dielectric formed over a first doped region of a silicon substrate. The solar cell can have a second dielectric formed over a second doped region of the silicon substrate, where the first dielectric is a different type of dielectric than the second dielectric. A doped semiconductor can be formed over the first and second dielectric. A positive-type metal and a negative-type metal can be formed over the doped semiconductor.

Abstract: A formulation for use in the preferential formation of thin films of a perovskite material AMX 3 with a certain required crystalline structure, wherein said formulation comprises two or more compounds which between them comprise one or more first organic cations A; one or more metalcations M; one or more second cations A?; one or more first anions X and one or more second anions X?.

Abstract: A photovoltaic device, comprises (1) a first conductive layer, (2) an optional blocking layer, on the first conductive layer, (3) a semiconductor layer, on the first conductive layer, (4) a light-harvesting material, on the semiconductor layer, (5) a hole transport material, on the light-harvesting material, and (6) a second conductive layer, on the hole transport material. The light-harvesting material comprises a perovskite absorber, and the second conductive layer comprises nickel. The semiconductor layer may comprise TiO2 nanowires. The light-harvesting material may comprise a perovskite absorber containing a pseudohalogen.