Abstract: The present teachings relate to charge-transporting metal oxide-polymer blend thin films which can be incorporated as the semiconductor component or one of the conductor components of a thin film transistor. Generally, the present charge-transporting metal oxide-polymer blend thin film includes a semiconducting or conducting metal oxide lattice and an electrically insulating polymer dispersed within the lattice. The electrically insulating polymer is present at about 20% or less by weight of the metal oxide.

Abstract: The present invention relates to a layer system (1) for thin-film solar cells with an absorber layer (4) that contains a chalcogenide compound semiconductor and a buffer layer (5) that is arranged on the absorber layer (4), wherein the buffer layer (5) contains NaxIn1SyClz with 0.05?x<0.2 or 0.2<x?0.5, 1?y?2, and 0.6?x/z ?1.4.

Abstract: Methods of fabricating a solar cell including metallization techniques and resulting solar cells, are described. In an example, a first and second semiconductor regions can be formed in or above a substrate, where a separation region is disposed between the first and second semiconductor regions. A protective region can be formed over the separation region. A first metal layer can be formed over the substrate, where the protective region prevents and/or inhibits damage to the separation region during the formation of the first metal layer. Conductive contacts can be formed over the first and second semiconductor regions.

Abstract: To produce pretinned strips of connectors for PV cells, a metal foil (30) is guided through a roll gap (46) of a rolling mill in which at least one work roll (48) has a surface with a corrugated structure with the result that a corrugated structure which has crests or peaks and troughs is embossed into at least one side of the metal foil (30), soldering tin in the form of solder preforms (54) is applied to the side of the metal foil (30) with the embossed corrugated structure, wherein the soldering flux necessary for pretinning has been applied in advance to the solder preforms or the metal foil, the solder preforms (54) are connected to the metal foil (30) or applied to it and melted on and the pretinned metal foil (30) with the embossed corrugated structure is separated into parallel ribbons. The solder preforms (54) are sufficiently thick for the corrugated structure to be at least full after the solder preforms (54) have been melted on.

Abstract: A metafilm coating having omni-directional bending of electromagnetic waves to the normal direction includes at least one medium having an effective relative permittivity of epsilon-near-zero, ?. The real component of the effective relative permittivity along the z-axis, (?z), perpendicular to the x-y plane, of the at medium, is about zero. At least one receptor is associated with the medium.

Abstract: A solid-state imaging device includes: a first chip including a pixel array in which a plurality of photoelectric conversion portions converting incident light into an electric signal are disposed; a second chip having an area in a plan view less than an area of the first chip in the plan view and electrically and physically connected to the first chip; and a support portion provided to cover an entire region which is not covered with the second chip in a surface of the first chip connected to the second chip and configured to support the first chip so that flatness of the first chip may be maintained.

Abstract: Provided is an OLED device that includes an adhesive film having a network and a method for fabricating the same. The OLED device includes: a protective layer covering an organic light-emitting element on a substrate; a metal layer on the protective layer; and an adhesive film between the metal layer and the protective layer to attach the metal layer to the protective layer. The adhesive film includes a first adhesive layer composed of first polymers having a network structure, and a second adhesive layer composed of second polymers having a network structure and moisture absorbent. The network structure of the first polymers is bonded with the network structure of the second polymers at an interface between the first adhesive layer and the second adhesive layer.

Abstract: Methods are provided for fabricating photovoltaic cell contacts, which include: providing a block copolymer layer above an electrical contact layer of the photovoltaic cell, the block copolymer layer being self-assembled by phase segregation to include multiple structures of a first polymer material surrounded, at least in part, by a second polymer material; selectively etching the block copolymer layer to remove the multiple structures, forming holes in the block copolymer layer; and using the holes in the block copolymer layer to facilitate providing electrical contacts between a light absorption layer of the photovoltaic cell and the electrical contact layer. For instance, the holes in the copolymer layer may be used in etching a passivation layer over the electrical contact layer to form nano-sized contact openings in the passivation layer to the contact layer. Once provided, the cell's light absorption material forms contacts extending through the contact openings in the passivation layer.

Abstract: A method for switching a memory resistance, including: changing a memory resistance of an oxide thin film of a semiconductor device by irradiating a near-infrared laser beam onto the oxide thin film, the semiconductor device having the oxide thin film formed on a substrate and two terminals formed at both ends of the oxide thin film.

Abstract: Photovoltaic cells, photovoltaic devices, and methods of fabrication are provided. The photovoltaic cells include a transparent substrate to allow light to enter the photovoltaic cell through the substrate, and a light absorption layer associated with the substrate. The light absorption layer has opposite first and second surfaces, with the first surface being closer to the transparent substrate than the second surface. A passivation layer is disposed over the second surface of the light absorption layer, and a plurality of first discrete contacts and a plurality of second discrete contacts are provided within the passivation layer to facilitate electrical coupling to the light absorption layer. A first electrode and a second electrode are disposed over the passivation layer to contact the plurality of first discrete contacts and the plurality of second discrete contacts, respectively. The first and second electrodes include a photon-reflective material.

Abstract: A method of fabricating a semiconductor device includes forming a first semiconductor region at a front surface of a substrate, the first semiconductor region including an active element that regulates current flowing in a thickness direction of the substrate; grinding a rear surface of the substrate; after the grinding, performing a first etching that etches the rear surface of the substrate with a chemical solution including phosphorus; after the first etching, performing a second etching that etches the rear surface with an etching method with a lower etching rate than the first etching; and after the second etching, forming a second semiconductor region through which the current is to flow, by implanting impurities from the rear surface of the substrate.

Abstract: A backside illuminated multi-junction solar cell module includes a substrate, multiple multi-junction solar cells, and a cell interconnection that provides a series connection between at least two of the multi-junction solar cells. The substrate may include a material that is substantially transparent to solar radiation. Each multi-junction solar cell includes a first active cell, grown over the substrate, for absorbing a first portion of the solar radiation for conversion into electrical energy and a second active cell, grown over the first active cell, for absorbing a second portion of the solar radiation for conversion into electrical energy. At least one of the first and second active cells includes a nitride.

Abstract: Conductive thick-film paste is useful in forming front-side contact of a solar cell or other semiconductor devices. Unlike conventional conductive frit pastes, a conductive paste according to the present invention does not include frit particles, and contains silver particles, nano-sized inorganic additives and an organic solvent. The conductive paste according to the present invention provides better etching ability through the anti-reflecting coating on the semiconductor substrate than conventional conductive frit pastes.

Abstract: To improve characteristics, reliability, and the like of a solar cell element, the solar cell element includes: a semiconductor substrate which includes a first main surface and a second main surface that is positioned opposite to the first main surface, and in which a p-type semiconductor region and an n-type semiconductor region are stacked in such a manner that the p-type semiconductor region is positioned closest to the first main surface and the n-type semiconductor region is positioned closest to the second main surface; a first passivation layer which is disposed on the p-type semiconductor region that is positioned closest to the first main surface, and which includes aluminum oxide; and a first protective layer that is disposed on the first passivation layer. The first protective layer includes an oxide that contains at least one kind of zirconium and hafnium.

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to Through-Silicon Via (TSV) structures with improved substrate contact and methods of manufacture. The structure includes: a substrate of a first species type; a layer of different species type on the substrate; a through substrate via formed through the substrate and comprising an insulator sidewall and conductive fill material; a second species type adjacent the through substrate via; a first contact in electrical contact with the layer of different species type; and a second contact in electrical contact with the conductive fill material of the through substrate via.

Abstract: A flexible dye-sensitized solar cell includes: a fiber layer formed of nanofibers; a conductive electrode layer formed on one side of the fiber layer; a photoelectrode layer formed on the conductive electrode layer; a counter electrode layer formed on the other side of the fiber layer; a sealing member for enclosing the fiber layer, the conductive electrode layer, the counter electrode layer and the photoelectrode layer therein so as to seal said layers from the outside; and an electrolyte infiltrated into the fiber layer. A cell body in which an electrode and a photoelectrode are formed on one surface of the fiber that contains an electrolyte therein and a counter electrode is formed on the other side of the fiber is sealed with a polymer film, thus forming a flexible solar cell having an excellent sealing structure for preventing the electrolyte from leaking out of the cell even when pressure is externally applied.

Abstract: Disclosed are a solar cell module apparatus and a method of fabricating the same. The solar cell module apparatus includes a light absorbing layer, and a reflector provided on a light incident surface of the light absorbing layer to reflect a light, which has been reflected from the light absorbing layer, toward the light absorbing layer.

Abstract: According to one embodiment, the n-side electrode has a corner and a plurality of straight portions. The plurality of straight portions extends in different directions. The corner connects the plurality of straight portions. A first insulating film is provided between the semiconductor layer and the corner of the n-side electrode. The corner is not in contact with the semiconductor layer. The straight portions of the n-side electrode are in contact with the semiconductor layer.

Abstract: The present invention relates to semiconductor materials that include a silicon-based quantum dot; and a conjugated organic ligand connected to the silicon-based quantum dot to obtain a functionalized quantum dot. An additional aspect of the present invention is to provide methods that include providing a silicon-based quantum dot; and connecting a conjugated organic ligand connected to the silicon-based quantum dot to obtain a functionalized quantum dot.

Abstract: A method of processing a silicon substrate can include etching the silicon substrate with a first etchant having a first concentration and etching with a second etchant having a second concentration. In an embodiment, the second concentration of the second etchant can be greater than the first concentration of the first etchant. In one embodiment, the first etchant can be a different type of etchant than the second etchant. In an embodiment, the first and second etchant can be the same type of etchant. In some embodiments the silicon substrate can be cleaned with a first cleaning solution to remove contaminants from the silicon substrate prior to etching with the first etchant. In an embodiment, the silicon substrate can be cleaned with a second cleaning solution after etching the silicon substrate with a second etchant.

Abstract: A hermetic seal between an optical element and a metal mount or housing using a fluoropolymer. The fluoropolymer is dispersed along the interior edge of the metal mount. The metal mount and fluoropolymer are then heated to a temperature exceeding the melting point of the fluoropolymer. Once heated the optical element is pressed into the metal mount and allowed to cool. The metal mount, optical element and thickness of fluoropolymer are sized to provide an interference fit between the metal mount and optical element.

Abstract: A light emitting device including a support layer; a reflective electrode disposed on the support layer; an ohmic electrode disposed on the reflective electrode, the ohmic electrode including a transparent electrode; and a semiconductor structure disposed on the ohmic electrode, the semiconductor structure including a p-type semiconductor layer disposed on the ohmic electrode; a light emitting layer disposed on the p-type semiconductor layer; and an n-type semiconductor layer disposed on the light emitting layer. Further, the transparent electrode has a thickness in the range of 40 nm to 90 nm.

Abstract: Contact holes of solar cells are formed by laser ablation to accommodate various solar cell designs. Use of a laser to form the contact holes is facilitated by replacing films formed on the diffusion regions with a film that has substantially uniform thickness. Contact holes may be formed to deep diffusion regions to increase the laser ablation process margins. The laser configuration may be tailored to form contact holes through dielectric films of varying thicknesses.

Abstract: A coil arrangement structure supporting wireless communication and a method for operating the same in a wireless terminal are provided. The coil arrangement structure includes a closed-loop metal frame and a coil arranged asymmetrically within the metal frame. The coil is arranged such that a distance between an outer side of the coil and an inner side of the metal frame is not constant and the coil is arranged integrally on a front surface of a display.

Abstract: A solar cell and a method for manufacturing the same are discussed. The solar cell includes a substrate of a first conductive type, an emitter region of a second conductive type opposite the first conductive type, the emitter region forming a p-n junction along with the substrate, a passivation layer which is positioned on a back surface of the substrate and has a plurality of via holes exposing portions of the back surface of the substrate, a first electrode connected to the emitter region, and a second electrode which is positioned on a back surface of the passivation layer and is connected to the substrate through the plurality of via holes.

Abstract: A semiconductor nanowire device includes at least one semiconductor nanowire having a bottom surface and a top surface, an insulating material which surrounds the semiconductor nanowire, and an electrode ohmically contacting the top surface of the semiconductor nanowire. A contact of the electrode to the semiconductor material of the semiconductor nanowire is dominated by the contact to the top surface of the semiconductor nanowire.

Abstract: Provided are an additive for an electrolytic composition which can suppress the decrease of a short-circuit current and improve an open circuit voltage as compared to the case when conventional 4-TBpy is used as an additive for an electrolytic composition, and an electrolytic composition using this additive and a dye-sensitized solar cell. The additive for an electrolytic composition for use in a dye-sensitized solar cell contains a pyridine derivative having a pyridine ring into which an alkylsilyl group is introduced, and it is preferable that this pyridine derivative has an alkylsilyl group at the 4-position of the pyridine ring, and it is more preferable that the pyridine derivative is 4-(trimethylsilyl) pyridine.

Abstract: A solar concentrator for concentrating solar radiation toward a solar cell, a concentrated photovoltaic module including a solar concentrator and a solar cell, and a secondary optical element for use in a solar concentrator are provided. The solar concentrator includes a primary optical element for collecting and focusing the solar radiation, and a secondary optical element. The secondary optical element is arranged to receive the solar radiation collected and focused by the primary optical element and includes an input end, and output end, and an adiabatic light guide tapering from the input end toward the output end and configured for concentrating and adiabatically guiding the solar radiation between the input and output ends. Some embodiments of the present invention can be useful in solar photovoltaic applications where it is desirable to provide high acceptance angles while maintaining high concentration and optical efficiency levels.

Abstract: Photovoltaic energy generation device, characterized in that it comprises at least one brick (120) comprising a lower terminal and an upper terminal, between which are arranged two cells (111), each comprising a photovoltaic cell (7), comprising one or more elementary photovoltaic cell(s), and a storage element (8) connected to the terminals of the photovoltaic cell, and at least three cell switchs (113), so as to be able to dispose the said two cells (111) in series or in parallel.

Abstract: A device, system, and method for a multi junction solar cell are described herein. An exemplary multi-solar cell structure can have a substrate having a first surface having a (111) crystalline etched surface. A dielectric layer can be deposited on the first surface of the substrate. A graded buffer layer can be grown on a second surface of the substrate with the second surface having a (100) crystalline surface. A first solar subcell within or on top of the graded buffer layer and a second solar subcell grown on top of the first solar subcell.

Abstract: Grid patterns for concentrator solar cells that increase power output are provided. In one aspect, a top contact for a solar cell is provided that includes: bus connectors and metallic fingers attached to the bus connectors, wherein each of the metallic fingers has a base which is connected to one of the bus connectors or to another one of the metallic fingers such that each of the metallic fingers is attached to one of the bus connectors either directly or indirectly via another one of the metallic fingers, and wherein at least one of the metallic fingers has a width that is tapered quadratically along a length of the metallic finger. A solar cell and a method of forming a solar cell top contact are also provided.

Abstract: An electrostatic chuck and a manufacturing method are disclosed in which drawbacks of using an adhesive are not existent and a freedom degree of design is high. The electrostatic chuck includes a substrate part constituting a main chuck body, a first insulating layer of a spray coating formed to the surface of the substrate part, a heater part of an electric conductor formed by applying a conductive paste to the surface of the first insulating layer, a second insulating layer of a spray coating formed to the surface of the first insulating layer so as to cover the heater part, an electrode part formed by thermal spraying to the surface of the second insulating layer and a dielectric layer of a spray coating formed to the surface of the second layer so as to cover the electrode part and lowers a volume resistivity without using an adhesive.

Abstract: A photoelectric conversion device includes: a wavelength converting region that absorbs ambient light to generate electrons and holes, and recombines the generated electrons and holes to generate monochromatic light; and a photoelectric conversion region that has a p-n junction or p-i-n junction, absorbs the monochromatic light generated in the wavelength converting region to generate electrons and holes, and separates and moves the electrons and holes generated by absorption of the monochromatic light. The wavelength converting region includes: a carrier generating region that generates the electrons and holes; a light emitting region that generates the monochromatic light; and a carrier selective transfer region that is disposed between the carrier generating region and the light emitting region and that, of the electrons and holes generated in the carrier generating region, moves those electrons and holes having specific energies difference there between to the light emitting region.

Abstract: A photovoltaic device is disclosed including at least one Cadmium Sulfide Telluride (CdSxTe1?x) layer as are methods of forming such a photovoltaic device.

Abstract: A method of fabricating a semiconductor device is provided. The method may include preparing a substrate having a first surface and a second surface, forming a via hole exposing at least a portion of the substrate from the first surface of the substrate, forming a first insulating film on an inner wall of the via hole, forming a conductive connection part filling an inside of the via hole including the first insulating film, polishing the second surface of the substrate until the conductive connection part is exposed, and selectively forming a second insulating film on the second surface of the substrate using an electrografting method to expose the conductive connection part.

Abstract: The present disclosure provides a method of anodizing a surface of a semiconductor device comprising a p-n junction. The method comprises exposing a first surface portion of the semiconductor device to an electrolytic solution that is suitable for anodizing the first surface portion when an electrical current is directed through a region at the first surface portion. Further, the method comprises exposing a portion of the semiconductor device to electromagnetic radiation in a manner such that the electromagnetic radiation induces the electrical current and the first surface portion anodizes.

Abstract: There is provided an imprint material that has sufficient adhesion to film substrates and excellent scratch resistance, and can be readily released from a mold at the time of mold release. An imprint material including: (A) a specific acrylamide such as N,N?-dimethylacrylamide; (B) a compound having alkylene oxide units and having 2 to 6 polymerizable groups at the ends of the compound, in which the alkylene oxide units are ethylene oxide units, propylene oxide units, or a combination thereof; and (C) a photopolymerization initiator.

Abstract: A solar cell includes a semiconductor substrate of first conductivity type, including first and second principal surfaces; a region of the first conductivity type, including a semiconductor layer structure of the first conductivity type provided on the first principal surface; and a region of an second conductivity type, including a semiconductor layer structure of the second conductivity type provided on the first principal surface. The semiconductor layer structure of the first conductivity type is formed extending into the region of the second conductivity type. Thereby the solar cell is provided with a stack region where the semiconductor layer structure of the second conductivity type is formed on the semiconductor layer structure of the first conductivity type.

Abstract: Disclosed are a solar cell and a method of fabricating the same. The solar cell includes a support substrate, a back electrode layer on the support substrate, a light absorbing layer on the back electrode layer, and a front electrode layer on the light absorbing layer. The back electrode layer includes at least three layers. The method includes forming a first layer on a support substrate, forming a second layer on the first layer, forming a third layer on the second layer, forming a light absorbing layer on the third layer, and forming a front electrode layer on the light absorbing layer.

Abstract: In one embodiment, harmful solar cell polarization is prevented or minimized by providing a conductive path that bleeds charge from a front side of a solar cell to the bulk of a wafer. The conductive path may include patterned holes in a dielectric passivation layer, a conductive anti-reflective coating, or layers of conductive material formed on the top or bottom surface of an anti-reflective coating, for example. Harmful solar cell polarization may also be prevented by biasing a region of a solar cell module on the front side of the solar cell.

Abstract: A method of manufacturing a semiconductor device, including forming an etching target film on a substrate; forming an anti-reflection film on the etching target film; forming a photoresist film on the anti-reflection film; exposing the photoresist film; performing heat treatment on the anti-reflection film and the photoresist film to form a covalent bond between the anti-reflection film and the photoresist film; and developing the photoresist film.

Abstract: A process is provided for contacting a nanostructured surface. The process may include (a) providing a substrate having a nanostructured material on a surface, (b) passivating the surface on which the nanostructured material is located, (c) screen printing onto the nanostructured surface and (d) firing the screen printing ink at a high temperature. In some embodiments, the nanostructured material compromises silicon. In some embodiments, the nanostructured material includes silicon nanowires. In some embodiments, the nanowires are around 150 nm, 250 nm, or 400 nm in length. In some embodiments, the nanowires have a diameter range between about 30 nm and about 200 nm. In some embodiments, the nanowires are tapered such that the base is larger than the tip. In some embodiments, the nanowires are tapered at an angle of about 1 degree, about 3 degrees, or about 10 degrees. In some embodiments, a high temperature can be approximately 700 C, 750 C, 800 C, or 850 C.

Abstract: The present invention is directed to a conductive paste used for solar cell electrodes comprising, (i) 60 wt % to 95 wt % of a conductive powder, based on the total weight of the conductive paste, (ii) 0.1 wt % to 10 wt % of a lead-tellurium-oxide powder, based on the total weight of the conductive paste, comprising 20 wt % to 60 wt % of PbO and 20 wt % to 60 wt % of TeO2, based on the total weight of the lead-tellurium-oxide powder, (iii) 3 wt % to 38 wt % of an organic medium, based on the total weight of the conductive paste, and (iv) 0.01 wt % to 5.0 wt % of lithium oxide powder selected from the group consisting of LiMnO3, Li2WO4, Li2CO3, Li2TiO3, Li4Ti5O12, Li2MoO4 and a mixture thereof, based on the total weight of the conductive paste.

Abstract: High speed optoelectronic devices and associated methods are provided. In one aspect, for example, a high speed optoelectronic device can include a silicon material having an incident light surface, a first doped region and a second doped region forming a semiconductive junction in the silicon material, and a textured region coupled to the silicon material and positioned to interact with electromagnetic radiation. The optoelectronic device has a response time of from about 1 picosecond to about 5 nanoseconds and a responsivity of greater than or equal to about 0.4 A/W for electromagnetic radiation having at least one wavelength from about 800 nm to about 1200 nm.

Abstract: A p-type transparent conductive material can comprise a thin film of BCSF on a substrate where the film has a conductivity of at least 1 S/cm. The substrate may be a plastic substrate, such as a polyethersulfone, polyethylene terephthalate, polyimide, or some other suitable plastic or polymeric substrate.

Abstract: Disclosed is a photovoltaic device that includes a solar cell on a light transmissive substrate in the form of an array of equal diameter optical fibers laid adjacent to each other in the transversal direction of the fibers. With such an arrangement, light harvesting at high angles is improved by 30%.

Abstract: In a solar cell module, a plurality of solar cells are provided between a front surface protection member and a back surface protection member and bus bar electrodes 20 of the plurality of solar cells are electrically connected to each other by wiring members. The solar cell module includes an adhesive layer made of a resin 60 containing a plurality of conductive particles 70, the adhesive layer provided between each of the bus bar electrodes 20 and the wiring member 40. Each of the bus bar electrodes 20 and the corresponding wiring member 40 are electrically connected by the plurality of conductive particles 70. The resin 60 covers side surface of each of the bus bar electrodes 20 and configured to bond the wiring member 40 with the surface of a photoelectric conversion body 10.

Abstract: A composition for solar cell electrodes and electrodes fabricated using the same. The composition includes a silver (Ag) powder; a first glass frit containing PbO and a second glass frit containing V2O5 and TeO2; and an organic vehicle. The composition includes two types of glass frits on PbO and V2O5-TeO2, respectively, thereby minimizing contact resistance and adverse influence on a p-n junction of silicon solar cells.

Abstract: In various embodiments, photovoltaic devices incorporate discontinuous passivation layers (i) disposed between a thin-film absorber layer and a partner layer, (ii) disposed between the partner layer and a front contact layer, and/or (iii) disposed between a back contact layer and the thin-film absorber layer.

Abstract: Intercalation pastes for use with semiconductor devices are disclosed. The pastes contain precious metal particles, intercalating particles, and an organic vehicle and can be used to improve the material properties of metal particle layers. Specific formulations have been developed to be screen-printed directly onto a dried metal particle layer and fired to make a fired multilayer stack. The fired multilayer stack can be tailored to create a solderable surface, high mechanical strength, and low contact resistance. In some embodiments, the fired multilayer stack can etch through a dielectric layer to improve adhesion to a substrate. Such pastes can be used to increase the efficiency of silicon solar cells, specifically multi- and mono-crystalline silicon back-surface field (BSF), and passivated emitter and rear contact (PERC) photovoltaic cells. Other applications include integrated circuits and more broadly, electronic devices.