Abstract: Intercalation pastes for use with semiconductor devices are disclosed. The pastes contain precious metal particles, intercalating particles, and an organic vehicle and can be used to improve the material properties of metal particle layers. Specific formulations have been developed to be screen-printed directly onto a dried metal particle layer and fired to make a fired multilayer stack. The fired multilayer stack can be tailored to create a solderable surface, high mechanical strength, and low contact resistance. In some embodiments, the fired multilayer stack can etch through a dielectric layer to improve adhesion to a substrate. Such pastes can be used to increase the efficiency of silicon solar cells, specifically multi- and mono-crystalline silicon back-surface field (BSF), and passivated emitter and rear contact (PERC) photovoltaic cells. Other applications include integrated circuits and more broadly, electronic devices.

Abstract: A method for forming a photovoltaic device includes forming an absorber layer with a granular structure on a conductive layer; conformally depositing an insulating protection layer over the absorber layer to fill in between grains of the absorber layer; and planarizing the protection layer and the absorber layer. A buffer layer is formed on the absorber layer, and a top transparent conductor layer is deposited over the buffer layer.

Abstract: A light shield may be formed in photonic integrated circuit between integrated optical devices of the photonic integrated circuit. The light shield may be built by using materials already present in the photonic integrated circuit, for example the light shield may include metal walls and doped semiconductor regions. Light-emitting or light-sensitive integrated optical devices or modules of a photonic integrated circuit may be constructed with light shields integrally built in.

Abstract: Approaches for foil-based metallization of solar cells are described. For example, a method of fabricating a solar cell involves placing a metal foil over a metalized surface of a wafer of the solar cell. The method further involves placing a protection layer over the metal foil. The method further involves locating the metal foil with the metalized surface of the wafer. The protection layer preserves an optically consistent surface of the metal foil during the locating. The method also involves, subsequent to the locating, electrically contacting the metal foil to the metalized surface of the wafer.

Abstract: A method of manufacturing a thin-film solar cell includes forming a first electrode on a substrate; forming a first petition groove for dividing the first electrode; forming a semiconductor layer on the first electrode and in the first partition groove; forming a second partition groove for dividing the semiconductor layer; forming a second electrode on the semiconductor layer and in the second partition groove; and forming a third partition groove for dividing the second electrode and the semiconductor layer. At least one of the steps of forming the first partition groove, the second partition groove, and the third partition groove includes forming an opening in a partition groove forming layer to expose a lower layer surface below the partition groove forming layer, bringing a needle into contact with the lower layer surface, and forming the partition groove by moving the needle in a predetermined direction.

Abstract: A solar module, particularly a thin-layer solar module, is described. The solar module has a laminated complex with two substrates between which there is a layer structure which has a front electrode layer, a back electrode layer and an intermediate semiconductor layer for forming a plurality of solar cells connected up in series, two contact elements at least one top element two contact pieces, and at least one connection socket. A method for producing the solar module is also described.

Abstract: Provided is a shoe sole member including a crosslinked foam forming a part or the whole of the shoe sole member, wherein the crosslinked foam is formed by a polymer composition showing specific results in measurement using pulsed NMR.

Abstract: A method of manufacturing solar cell includes providing a semiconductor substrate. A coating layer is then formed on a plurality of sides. Subsequently, an anti-reflective layer is formed on the layer. Finally at least one first electrode and at least one second electrode are formed. The first and second electrodes respectively and electrically connect to the second conductive amorphous substrate and the semiconductor substrate. The potential induced degradation is greatly reduced.

Abstract: The disclosure provides a solar cell encapsulating module including a first substrate, a first encapsulating material layer, a metal particle layer, multiple solar cells, a routing layer, a second encapsulating material layer and a second substrate. The first substrate is formed from a light transmittance material. The first encapsulating material layer is formed on the first substrate. The metal particle layer is formed on the first encapsulating material layer. The solar cells are disposed on the metal particle layer. The routing layer is disposed on the solar cells for being electrically connected to the plurality of solar cells. The second encapsulating material layer is formed on the routing layer. The second substrate is disposed on the second encapsulating material layer. The routing layer is disposed on only one side of the solar cells.

Abstract: Methods and semiconductor materials produced by such methods that are suitable for use in photovoltaic cells, solar cells fabricated with such methods, and solar panels composed thereof. Such methods include a wet-chemical synthesis method capable of producing a Group I-III-VI2 semiconductor material by forming a solution containing an organic solvent, at least one Group I precursor of at least one Group I element, and at least one Group III precursor of at least one Group III element. The Group I precursor is present in the solution in an amount of less than 120% of a stoichiometric ratio of the Group I element in the Group I-III-VI2 semiconductor material, and the Group III precursor is present in the solution in an amount of greater than 55% of a stoichiometric ratio of the Group III element in the Group I-III-VI2 semiconductor material.

Abstract: The present invention is a method for forming a porous film of an inorganic substance on a base material by spraying fine particles of an inorganic substance on the base material such that the fine particles are bonded to the base material and bonded to one another, in which the fine particles include at least two kinds of fine particles which are small-size particles and large-size particles having different average particle sizes. According to the present invention, it is possible to provide a film forming method for forming a porous film formed of an inorganic substance without requiring a baking step, a body having a film formed thereon that is produced by the film forming method, and a dye-sensitized solar cell including the body having a film formed thereon.

Abstract: A method for forming a photovoltaic device includes forming a photovoltaic absorption stack on a substrate including one or more of I-III-VI2 and I2-II-IV-VI4 semiconductor material. A transparent conductive contact layer is deposited on the photovoltaic absorption stack at a temperature less than 200 degrees Celsius. The transparent conductive contact layer has a thickness of about one micron and is formed on a front light-receiving surface. The surface includes pyramidal structures due to an as deposited thickness. The transparent conductive contact layer is wet etched to further roughen the front light-receiving surface to reduce reflectance.

Abstract: Provided is a hydrolysis-resistant polyester film having a low acid value due to suppression of acid value-increase during film formation. The hydrolysis-resistant polyester film of the present invention is a polyester film comprising a polyester resin composition, wherein the polyester resin composition that forms the films comprises 0.03 to 6.7 eq/ton of hindered phenol structural units, an acid value of a polyester that forms the film is less than 25 eq/ton, and an intrinsic viscosity of a polyester that forms the film is more than 0.64 dL/g and not less than 0.90 dL/g.

Abstract: A composition for forming a passivation layer, comprising a compound represented by Formula (I): M(OR1)m. In Formula (I), M comprises at least one metal element selected from the group consisting of Nb, Ta, V, Y and Hf, each R1 independently represents an alkyl group having from 1 to 8 carbon atoms or an aryl group having from 6 to 14 carbon atoms, and m represents an integer from 1 to 5.

Abstract: Conventionally, a silver-cerium oxide composite containing a silver particle and cerium oxide covering the surface of the silver particle has been synthesized through a multi-stage process, and is disadvantageous not only in that there is a need to use an organic solvent and a surfactant, causing the time and cost to be increased, but also in that there is a possibility that fulminating silver is formed, leading to a problem about the safety. A method for producing a catalyst having a silver-cerium oxide composite and an alkaline carrier having supported thereon the oxide composite, the silver-cerium oxide composite containing a silver particle and cerium oxide covering the surface of the silver particle, the method having preparing a mixture containing a silver compound, a cerium compound, and an alkaline carrier, and drying the mixture is provided.

Abstract: A heating and power generating apparatus comprises: a frame installed on the roof of a building and having a predetermined area; a plurality of power generating units arranged inside the frame to collect sunlight and generate electricity; and a hot water supply unit buried inside of the frame to absorb sunlight and perform heating and hot water supply. According to the present invention, hot water can be generated by sunlight in the winter to supply hot water and heat a house, and power can be generated by sunlight in the summer to supply power for cooling a room and thus conserve the electrical energy used in a cooler, thus promoting energy saving and environmental protection.

Abstract: Disclosed is a manganese tin oxide-based transparent conducting oxide (TCO) with an optimized composition, which has low surface roughness, low sheet resistance and high transmittance even when deposited at room temperature, a multilayer transparent conductive film using the same and a method for fabricating the same. The manganese tin oxide-based transparent conducting oxide has a composition of MnxSn1-xO (0<x?0.055), and the multilayer transparent conductive film includes: a manganese tin oxide-based transparent conducting oxide having a composition of MnxSn1-xO (0<x?0.055); a metal thin film deposited on the manganese tin oxide-based transparent conducting oxide; and a manganese tin oxide-based transparent conducting oxide having a composition of MnxSn1-xO (0<x?0.055) deposited on the metal thin film.

Abstract: A photovoltaic cell including: (a) a housing adapted to enclose the photovoltaic cell, and including an at least partially transparent cell wall; (b) an electrolyte, disposed within the cell wall, and containing a corrosive redox species; (c) an at least partially transparent conductive coating disposed on an interior surface of the cell wall, within the photovoltaic cell; (d) an anode disposed on the conductive coating, the anode including a porous film adapted to make intimate contact with the redox species, and a dye, absorbed on a surface of the porous film, the dye and the film adapted to convert photons to electrons; (e) a cathode, disposed within an interior surface of the housing and disposed substantially opposite the anode, including a conductive carbon layer, and a catalytic component, associated with the carbon layer and adapted to catalyze a redox reaction, the carbon layer adapted to transfer electrons from the catalytic component to a current collection component of the cathode, and (f) at leas

Abstract: A change in electrical characteristics in a semiconductor device including an oxide semiconductor film is inhibited, and the reliability is improved. The semiconductor device includes a gate electrode, a first insulating film over the gate electrode, an oxide semiconductor film over the first insulating film, a source electrode electrically connected to the oxide semiconductor film, a drain electrode electrically connected to the oxide semiconductor film, a second insulating film over the oxide semiconductor film, the source electrode, and the drain electrode, a first metal oxide film over the second insulating film, and a second metal oxide film over the first metal oxide film. The first metal oxide film contains at least one metal element that is the same as a metal element contained in the oxide semiconductor film. The second metal oxide film includes a region where the second metal oxide film and the first metal oxide film are mixed.

Abstract: A solar cell apparatus according to the embodiment includes a support substrate; a back electrode layer on the support layer; a light absorbing layer on the back electrode layer; a plurality of buffer layers on the light absorbing layer, the plurality of buffer layers having a bandgap gradually increased from a bottom thereof to a top thereof; and a window layer on the buffer layers.

Abstract: The present disclosure provides a method of manufacturing a solar cell including: providing a first substrate and a second substrate; depositing on the first substrate a sequence of layers of semiconductor material forming a solar cell including a top subcell and a bottom subcell; forming a back metal contact over the bottom subcell; applying a conductive polyimide adhesive to the second substrate; attaching the second substrate on top of the back metal contact; and removing the first substrate to expose the surface of the top subcell.

Abstract: A photovoltaic module, and method of making, is disclosed in which a flexible circuit is electrically coupled to a plurality of photovoltaic cells, where the photovoltaic cells are electrically coupled in series to form a series of cells. Each photovoltaic cell has free-standing metallic articles coupled to the top and bottom surfaces of a semiconductor substrate. A cell interconnection element of each photovoltaic cell is electrically coupled to a free-standing metallic article of an adjacent photovoltaic cell, where the interconnection elements of the initial and final cells in the series serve as contact ends for the series of cells. Contact tabs of the flexible circuit are electrically coupled to the contact ends of the series of cells, and a junction box is electrically coupled to a junction box contact region of the flexible circuit.

Abstract: A solar cell of the present invention includes a collecting electrode on one main surface of a photoelectric conversion section. The collecting electrode includes first and second electroconductive layers in this order from the photoelectric conversion section side, and an insulating layer between the first and second electroconductive layers, the insulating layer having an opening section formed therein. The first electroconductive layer is covered with the insulating layer, contains a low-melting-point material, and is conductively connected with a part of the second electroconductive layer via the opening section. The surface roughness of the second electroconductive layer is preferably 1.0 ?m to 10.0 ?m. The second electroconductive layer is preferably formed by a plating method. In order to conductively connect the first and second electroconductive layers, annealing of the first electroconductive layer by heating is preferably performed prior to forming the second electroconductive layer.

Abstract: Photovoltaic cells, methods for fabricating surface mount multijunction photovoltaic cells, methods for assembling solar panels, and solar panels comprising photovoltaic cells are disclosed. The surface mount multijunction photovoltaic cells include through-wafer-vias for interconnecting the front surface epitaxial layer to a contact pad on the back surface. The through-wafer-vias are formed using a wet etch process that removes semiconductor materials non-selectively without major differences in etch rates between heteroepitaxial III-V semiconductor layers.

Abstract: Processes for creating build sequences are described which use computational chemistry algorithms to simulate mechanosynthetic reactions, and which may use the mechanosynthesis process conditions or equipment limitations in these simulations, and which facilitate determining a set of mechanosynthetic reactions that will build an atomically-precise workpiece with a desired degree of reliability. Included are methods for error correction of pathological reactions or avoidance of pathological reactions. Libraries of reactions may be used to reduce simulation requirements.

Abstract: The instant disclosure relates to contact grids for use in photovoltaic cells, wherein a cross-section of the contact grid fingers is shaped as a trapezoid, as well as a method of making photovoltaic cells comprising these contact grids. The contact grids of the instant disclosure are cost effective and, due to their thick metal grids, exhibit minimum resistance. Despite having thick metal grids, the unique shape of the contact grid fingers of the instant disclosure allow the photovoltaic cells in which they are employed to retain more solar energy than traditional solar cells by reflecting incoming solar energy back onto the surface of the solar cell instead of reflecting this energy away from the cell.

Abstract: A composition for solar cell electrodes, an electrode fabricated using the same, and a solar cell including the electrode, the composition including a conductive powder; a glass frit; and an organic vehicle, wherein the conductive powder includes silver powder and aluminum powder, the silver powder includes silver particles having an average particle size D50 of 1.5 ?m or more in an amount of 50 wt % or more, based on a total weight of the silver powder.

Abstract: Solar cell structures that have improved carrier collection efficiencies at a heterointerface are provided by low temperature epitaxial growth of silicon on a III-V base. Additionally, a solar cell structure having improved open circuit voltage includes a shallow junction III-V emitter formed by epitaxy or diffusion followed by the epitaxy of SixGe1-x passivated by amorphous SiyGe1-y:H.

Abstract: A solid state image sensor includes a semiconductor substrate where photoelectric conversion regions for converting light into charges are arranged per pixel planarly arranged; an organic photoelectric conversion film laminated at a light irradiated side of the semiconductor substrate via an insulation film and formed at the regions where the pixels are formed; a lower electrode formed at and in contact with the organic photoelectric conversion film at a semiconductor substrate side; a first upper electrode laminated at a light irradiated side of the organic photoelectric conversion film and formed such that ends of the first upper electrode are substantially conform with ends of the organic photoelectric conversion film when the solid state image sensor is planarly viewed; and a film stress suppressor for suppressing an effect of a film stress on the organic photoelectric conversion film, the film stress being generated on the first upper electrode.

Abstract: A solar battery module is provided with a plurality of solar battery cells which are connected to each other by connecting bus bar electrodes (21) formed on the surfaces of the adjacent solar battery cells with wiring material (41a, 41b). The bus bar electrode (21) is embedded in the wiring material (41b), and the solar battery cell (1) and the wiring material (41b) are bonded with a resin.

Abstract: There is provided a photovoltaic device (100) having a substrate (10), i-type amorphous layers (16i, 18i) formed over a region of at least a part of a back surface of the substrate, and an i-type amorphous layer (12i) formed over a region of at least a part of a light-receiving surface of the substrate (10); and characterized in that electrodes (24n, 24p) are provided on the back surface and no electrode is provided on the light-receiving surface, and an electrical resistance per unit area of the back surface side i-type amorphous layers is lower than an electrical resistance per unit area of the light-receiving surface side i-type amorphous layer.

Abstract: Disclosed is a method of manufacturing a surface-treated transparent conductive polymer thin film, including: 1) preparing a PEDOT:PSS ink composition; 2) forming a PEDOT:PSS thin film on a substrate using the ink composition; 3) applying a p-toluene sulfonic acid solution on the PEDOT:PSS thin film and then thermally treating the PEDOT:PSS thin film; 4) rinsing the thermally treated PEDOT:PSS thin film; and 5) drying the rinsed PEDOT:PSS thin film.

Abstract: A solar battery cell, including semiconductor substrate, an insulating film formed on one face side of the semiconductor substrate, and an electrode electrically connected to the one face side of the semiconductor substrate, the electrode being embedded in a groove that is provided on the insulating film and provided so as to protrude from a surface of the insulating film by a same width as the groove.

Abstract: The manufacturing method of a solar cell includes forming a photoelectric conversion unit and forming an electrode connected to the photoelectric conversion unit. The step of forming the electrode includes forming a seed formation layer connected to the photoelectric conversion unit, forming an anti-oxidation layer on the seed formation layer, performing a thermal process such that a material of the seed formation layer and a material of the photoelectric conversion unit react with each other to form a chemical bonding layer at a portion at which the seed formation layer and the photoelectric conversion unit are adjacent to each other, forming a conductive layer and a capping layer on the seed formation layer in a state in which a mask is used on the seed formation layer, and patterning the seed formation layer using either the conductive layer or the capping layer as a mask.

Abstract: Disclosed are a paste and a method for manufacturing a solar cell through screen printing said paste. The paste contains inorganic powder; an organic solvent; and a binder, and the inorganic powder has a tap density of 0.01 to 20 g/cm3. An etching mask pattern formed using said paste has good etch resistance in an etch-back process by which a selective emitter is formed, and thus, a stable emitter can be formed.

Abstract: A method of forming a thin film including vaporizing a nickel compound on a substrate using a heterostructured nickel compound including a nickel amidinate ligand and an aliphatic alkoxy group and providing a vapor containing the vaporized nickel compound onto the substrate, thereby forming a nickel-containing layer. Vaporizing the nickel compound on the substrate is performed in an atmosphere in which at least one selected from plasma, heat, light, and voltage is applied.

Abstract: Disclosed is a new class of transparent conductive coatings based on conductive grids and percolative pattern therefore.

Abstract: A method of manufacturing a device comprises depositing one or more metallization layers to a substrate, locally heating an area of the one or more metallization layers to obtain a substrate/metallization-layer compound or a metallization-layer compound, the compound comprising an etch-selectivity toward an etching medium which is different to that of the one or more metallization layers outside the area, and removing the one or more metallization layers in the area or outside the area, depending on the etching selectivity in the area or outside the area, by etching with the etching medium to form the device.

Abstract: Provided are novel building integrable photovoltaic (BIPV) structures having multiple photovoltaic portions offset with respect to each other along their lengths. An offset direction can correspond to the length of a row of installed BIPV structures. In some embodiments, a BIPV structure may include three offset photovoltaic portions and three corresponding flap portions for extending under photovoltaic portions of adjacent structures and sealing interfaces between installed structures. The novel BIPV structures can facilitate installation, while providing the flexibility to avoid obstacles. Provided also are novel BIPV assemblies having multi-conductor return lines extending through the assemblies. A BIPV assembly having a multi-conductor return line may include a return line for the assembly itself, and one or more return lines for other assemblies.

Abstract: Methods of fabricating solar cells using a metal-containing thermal and diffusion barrier layer in foil-based metallization approaches, and the resulting solar cells, are described. For example, a method of fabricating a solar cell includes forming a plurality of semiconductor regions in or above a substrate. The method also includes forming a metal-containing thermal and diffusion barrier layer above the plurality of semiconductor regions. The method also includes forming a metal seed layer on the metal-containing thermal and diffusion barrier layer. The method also includes forming a metal conductor layer on the metal seed layer. The method also includes laser welding the metal conductor layer to the metal seed layer. The metal-containing thermal and diffusion barrier layer protects the plurality of semiconductor regions during the laser welding.

Abstract: The solar cell (1) of the present invention is provided with an n-side electrode (14), a p-side electrode (15), and a photoelectric conversion unit (20) having a first main surface (20a) and a second main surface (20b). The first main surface (20a) includes an n-type surface (20an) and a p-type surface (20ap). The photoelectric conversion unit (20) has a semiconductor substrate (10) and a semiconductor layer (12n). The semiconductor substrate (10) has first and second main surfaces (10b, 10a). The semiconductor layer (12n) is arranged on a portion of the first main surface (10b). The semiconductor layer (12n) constitutes either the n-type surface (20an) or the p-type surface (20ap). The semiconductor layer (12n) includes a relatively thick portion (12n1) and a relative thin portion (12n2). The n-side electrode (14) or the p-side electrode (15) is arranged on at least the relatively thin portion (12n2) of the semiconductor layer (12n).

Abstract: An electrical contact structure (an MIS contact) includes one or more conductors (M-Layer), a semiconductor (S-Layer), and an interfacial dielectric layer (I-Layer) of less than 4 nm thickness disposed between and in contact with both the M-Layer and the S-Layer. The I-Layer is an oxide of a metal or a semiconductor. The conductor of the M-Layer that is adjacent to and in direct contact with the I-Layer is a metal oxide that is electrically conductive, chemically stable and unreactive at its interface with the I-Layer at temperatures up to 450° C. The electrical contact structure has a specific contact resistivity of less than or equal to approximately 10?5-10?7 ?-cm2 when the doping in the semiconductor adjacent the MIS contact is greater than approximately 2×1019 cm?3 and less than approximately 10?8 ?-cm2 when the doping in the semiconductor adjacent the MIS contact is greater than approximately 1020 cm?3.

Abstract: A vent structure includes: a first housing component having an opening portion for ventilation; a gas-permeable membrane that is attached to the first housing component to close the opening portion; and a laser welding portion that joins the first housing component with the gas-permeable membrane. The gas-permeable membrane includes a main body including a fluororesin film and a porous resin sheet that is laid on the main body. The porous resin sheet is located on the surface side of the vent structure. Both of the main body and the outer peripheral portion of the porous resin sheet that projects outwardly from the main body are fixed to the first housing component by the laser welding portion.

Abstract: The present invention aims to provide an anode active material which may intend to improve safety of a battery. The object is attained by providing an anode active material being used for a sodium ion battery or a lithium ion battery, wherein the anode active material has an A4Nb6O17 phase (A is at least one kind of H, Na and K).

Abstract: The present invention describes a nanocomposite and hybride material of functionalized carbon nanotubes and cellulose and associated methods for the fabrication of that nanocomposite or hybride material containing electromagnetically active nanoparticles. The fabrication is fast, environmentally friendly, and economical. These nanocomposites are strong and electrically conducting, and have many materials and electronic applications.

Abstract: The present application is directed to an assembly comprising an electronic device, and a multilayer film. The multilayer film comprises a barrier stack adjacent the electronic device; and a weatherable sheet adjacent the barrier stack opposite the electronic device. The assembly additionally comprises a protective layer in contact with the electronic device and the weatherable sheet. The present application allows for the combination of any of the disclosed elements.

Abstract: The present invention relates to a solar cell encapsulant sheet comprising at least one ethylene-based resin selected from the group consisting of an ethylene-?-olefin copolymer, an ethylene homopolymer and an ethylene-unsaturated ester copolymer, 0.001 parts by mass to 5 parts by mass of at least one compound selected from the group consisting of silicon dioxide and zeolite, and 0.001 parts by mass to 5 parts by mass of a silane coupling agent, relative to 100 parts by mass of the ethylene-based resin respectively.

Abstract: This solar cell module (1) comprises a plurality of solar cell arrays (11). Each solar cell array (11) includes a plurality of spherical semiconductor elements (20) arranged in a row, at least a pair of bypass diodes (40), and a pair of lead members (14) that connect the plurality of spherical semiconductor elements (20) and the plurality of bypass diodes (40) in parallel. Each of the lead members (14) includes one or plural lead strings (15) to which the plurality of spherical semiconductor elements (20) are electrically connected and having a width less than or equal to the radius of the spherical semiconductor element (20), and plural lead pieces (16) formed integrally with the lead strings (15) at least at both end portions of the lead member (14), on which the bypass diodes (40) are electrically connected in reverse parallel to the spherical semiconductor elements (20), and having width larger than or equal to the width of the bypass diodes (40).

Abstract: A method of forming a photovoltaic device is provided that includes a p-n junction with a p-type semiconductor portion and an n-type semiconductor portion, wherein an upper exposed surface of one of the semiconductor portions represents a front side surface of the semiconductor substrate. Patterned antireflective coating layers are formed on the front side surface of the semiconductor surface to provide a grid pattern including a busbar region and finger region. A mask having a shape that mimics each patterned antireflective coating layer is provided atop each patterned antireflective coating layer. A metal layer is electrodeposited on the busbar region and the finger regions. After removing the mask, an anneal is performed that reacts metal atoms from the metal layer react with semiconductor atoms from the busbar region and the finger regions forming a metal semiconductor alloy.

Abstract: A photovoltaic device includes a substrate, a back contact comprising a stable low-work function material, a photovoltaic absorber material layer comprising Ag2ZnSn(S,Se)4 (AZTSSe) on a side of the back contact opposite the substrate, wherein the back contact forms an Ohmic contact with the photovoltaic absorber material layer, a buffer layer or Schottky contact layer on a side of the absorber layer opposite the back contact, and a top electrode on a side of the buffer layer opposite the absorber layer.