Abstract: Silicon solar cells and contacts thereof are printed in at least a two stage printing process where the busbars and fingerlines may be printed separately. A reduction in silver content in busbars and fingerlines through use of the techniques of the invention have been realized, including the use of certain base metals, while maintaining low contact resistance similar to silve pastes.

Abstract: A method of manufacturing a solar cell includes forming jagged portions non-uniformly on a surface of a substrate, forming a first type semiconductor and a second type semiconductor in the substrate, forming a first electrode to contact the first type semiconductor, and forming a second electrode to contact the second type semiconductor. An etchant used in a wet etching process in manufacturing the solar cell includes about 0.5 wt % to 10 wt % of HF, about 30 wt % to 60 wt % of HNO3, and up to about 30 wt % of acetic acid based on total weight of the etchant.

Abstract: A photoelectric conversion element is formed by laminating, in order, a substrate, a lower electrode, an organic layer which generates electric charge by light irradiation, an upper electrode which transmits light, a buffer layer and a protective film. The buffer layer is formed from hydrogenated silicon oxide containing hydrogen ions, and has a thickness of 1 to 100 nm. The protective film contains hydrogenated silicon nitride containing hydrogen ions or hydrogenated silicon oxynitride containing hydrogen ions and has a thickness of 30 to 500 nm.

Abstract: A solar cell can have a first dielectric formed over a first doped region of a silicon substrate. The solar cell can have a second dielectric formed over a second doped region of the silicon substrate, where the first dielectric is a different type of dielectric than the second dielectric. A doped semiconductor can be formed over the first and second dielectric. A positive-type metal and a negative-type metal can be formed over the doped semiconductor.

Abstract: In a method for manufacturing a photoelectric conversion device, a method for forming an embedded electrode is provided, which is suitable for a groove with a high aspect ratio. A first groove and a second groove intersecting with the first groove are formed in a crystalline silicon substrate, an i-type first silicon semiconductor layer, a second silicon semiconductor layer with one conductivity type, and a light-transmitting conductive film are sequentially formed on the surface of the crystalline silicon substrate and on the grooves, a conductive resin is injected into the first groove, and the second groove is filled with the conductive resin by a capillary action to form a grid electrode.

Abstract: Thin film photovoltaic devices that include at least one lead bar extending through a connection aperture defined in the encapsulation substrate are provided. The photovoltaic device can include: a transparent substrate; a plurality of photovoltaic cells on the transparent substrate; a first conductive ribbon electrically connected to a first photovoltaic cell; an encapsulation substrate laminated to the transparent substrate such that the plurality of photovoltaic cells and the conductive ribbon are positioned between the transparent substrate and the encapsulation substrate; and, a first lead bar extending through a first connection aperture defined in the encapsulation substrate. The first lead bar is electrically connected to the first conductive ribbon. For example, a meltable conductive material can be connected to the first lead bar and to the first conductive ribbon to establish an electrical connection therebetween.

Abstract: Materials and methods for fabrication of rear tabbing, front busbar, and fine grid line layers for silicon based photovoltaic cells are disclosed. Materials include conductive metallization pastes that contain core-shell nickel based particles.

Abstract: A process for annealing photovoltaic polymer encapsulation film (3), the film comprising polymer molecules substantially oriented along a machine direction, characterized in that the film is heated, supported on a support surface of support means (12), with heating means to a relaxation temperature to increase the isotropy of the polymer molecules such that the film is at least partly annealed, the support means (12) comprising a fluid (13) between the film (3) and the support surface.

Abstract: Disclosed is a semiconductor device comprising at least one active layer (14, 16) on a substrate (10) and a first contact (24, 26, 28) to the at least one active layer, the first contact comprising a metal in contact with the at least one active layer and a titanium tungsten nitride (TiW(N)) layer (30) on the metal. A method of manufacturing such a semiconductor device is also disclosed.

Abstract: A method for plating metal to a solar cell is disclosed. The method includes plating a metal layer only on the surface of solar cell without plating metal along the solar cell edges by conducting a first current in a first direction in an electroplating bath, ejecting metal from the metal layer by conducting a second current in a second direction and plating additional metal to the metal layer by conducting a third current in the first direction. The first, second and third current can be alternated. Subsequent to an electroplating process, an ultrasonic cleaning process is performed on the solar cell to remove any excess plated metal along the surface and edges of the solar cell.

Abstract: The present invention relates to an organic metal dye comprising fused heterocyclic derivatives, and to a photoelectric element and to a dye-sensitized solar cell using the organic metal dye.

Abstract: A cooling structure can efficiently reduce heat, thereby suppressing temperature elevation in heat-producing electronic apparatuses, without using a heat sink or water-cooling jacket, and which can achieve their downsizing or weight reduction. The cooling structure includes: a heat conduction layer which is formed by coating a first paste on a surface of a heat-producing object; and a heat radiation layer which is formed by coating a second paste on a surface of the heat conduction layer. The heat conduction layer includes a first resin and a first filler, and a heat conductivity ? of the heat conduction layer is 1.0 W/(m·K) or more. The heat radiation layer includes a second resin and a second filler, and an infrared emissivity ? of the heat radiation layer is 0.7 or more.

Abstract: A composition for manufacturing an electrode of a solar cell, comprising metal nanoparticles dispersed in a dispersive medium, wherein the metal nanoparticles contain silver nanoparticles of 75 weight % or more, the metal nanoparticles are chemically modified by a protective agent having a main chain of organic molecule comprising a carbon backbone of carbon number of 1 to 3, and the metal nanoparticles contains 70% or more in number-average of metal nanoparticles having a primary grain size within a range of 10 to 50 nm.

Abstract: A solar cell according to an embodiment of the invention includes a semiconductor substrate; an emitter layer formed at the semiconductor substrate, wherein the emitter layer includes a first portion of a first resistance and a second portion of a second resistance higher than the first resistance, wherein the first portion includes a first dopant and a second dopant having the same conductive type and the second portion including the second dopant; a passivation layer formed on the emitter layer, wherein the passivation layer includes the first dopant; and an electrode electrically connected to the first portion through the passivation layer.

Abstract: Metal seed layers for solar cell conductive contacts and methods of forming metal seed layers for solar cell conductive contacts are described. For example, a solar cell includes a substrate. A semiconductor region is disposed in or above the substrate. A conductive contact is disposed on the semiconductor region and includes a seed layer in contact with the semiconductor region. The seed layer is composed of aluminum (Al) and a second, different, metal.

Abstract: A new composition of matter is disclosed wherein oxygen vacancies in a semiconducting transition metal oxide such as titanium dioxide are filled with a halogen such as Fluorine, whereby the conductivity of the composition is greatly enhanced, while at the same time the chemical stability of the composition is greatly improved. Stoichiometric titanium dioxide having less than 3 % oxygen vacancies is subject to fluorine insertion such that oxygen vacancies are filled, limited amounts of fluorine replace additional oxygen atoms and fluorine interstitially inserts into the body of the TiO2 composition.

Abstract: An all back contact solar cell has a hybrid emitter design. The solar cell has a thin dielectric layer formed on a backside surface of a single crystalline silicon substrate. One emitter of the solar cell is made of doped polycrystalline silicon that is formed on the thin dielectric layer. The other emitter of the solar cell is formed in the single crystalline silicon substrate and is made of doped single crystalline silicon. The solar cell includes contact holes that allow metal contacts to connect to corresponding emitters.

Abstract: A solar cell includes negative metal contact fingers and positive metal contact fingers. The negative metal contact fingers are interdigitated with the positive metal contact fingers. The metal contact fingers, both positive and negative, have a radial design where they radially extend to surround at least 25% of a perimeter of a corresponding contact pad. The metal contact fingers have bend points, which collectively form a radial pattern with a center point within the contact pad. Exactly two metal contact pads merge into a single leading metal contact pad that is wider than either of the exactly two metal contact pads.

Abstract: A back-contact solar cell module and a process for making such a solar cell module are provided. The module includes a porous wire mounting layer with a plurality of elongated electrically conductive wires mounted thereon. A polymeric encapsulant layer is provided between a rear surface of solar cells of the module and the porous wire mounting layer and is melted to adhere to the solar cells and penetrate the porous wire mounting layer. Back electrical contacts on the solar cells are electrically connected to the electrically conductive wires through the porous wire mounting layer.

Abstract: The present invention is to grant a margin in the control of a depth of a groove when removing a transparent insulation layer after the transparent insulation layer is formed on the entire surface of the transparent conductive layer, thereby provide a solar cell which has superior productivity in mass manufacturing. A solar cell includes an n-type amorphous silicon layer formed on a front-surface side of an n-type monocrystalline silicon the substrate; a front-surface side transparent conductive layer formed on the n-type amorphous silicon layer; a p-type amorphous silicon layer formed on a rear-surface-side of the substrate; and a rear-surface-side transparent conductive layer formed on the p-type amorphous silicon layer. A front-surface side collector electrode is formed by plating on the front-surface side transparent conductive layer whereas a rear-surface-side collector electrode is formed on the rear-surface-side transparent conductive layer by printing.

Abstract: A conductive film substrate, a photovoltaic cell having the same, and a method of manufacturing the same. The conductive film substrate includes a base substrate and a transparent conductive film formed on the base substrate. The transparent conductive film is a zinc oxide thin film which has first texture structures and second texture structures concurrently formed on a surface thereof. The second texture structures are smaller than the first texture structures.

Abstract: A method for producing light emission from a semiconductor structure, including the following steps: providing a semiconductor structure that includes a semiconductor base region of a first conductivity type and having a relatively long minority carrier diffusion length characteristic, between a semiconductor emitter region of a second conductivity type opposite to that of the first conductivity type, and a semiconductor drain region of the second conductivity type; providing, between the base region and the drain region, a semiconductor auxiliary region of the first conductivity type and having a relatively short minority carrier diffusion length characteristic; providing, within the base region, a region exhibiting quantum size effects; providing an emitter electrode coupled with the emitter region; providing a base/drain electrode coupled with the base region and the drain region; and applying signals with respect to the emitter and base/drain electrodes to obtain light emission from the semiconductor stru

Abstract: A photovoltaic device operable to convert light to electricity, comprising a substrate, a plurality of structures essentially perpendicular to the substrate, one or more recesses between the structures, each recess having a planar mirror on a bottom wall thereof and each recess filled with a transparent material. The structures have p-n or p-i-n junctions for converting light into electricity. The planar mirrors function as an electrode and can reflect light incident thereon back to the structures to be converted into electricity.

Abstract: A method for producing a heterojunction photovoltaic cell includes formation of at least one anti-reflection layer on which at least one metal track is formed. The method includes heat treatment to make the contact connection between the track and the anti-reflection layer. The heat treatment selectively applies a laser beam on the track to generate a heat input up to anti-reflection layer.

Abstract: A removable cover system for protecting solar cells from exposure to moisture during fabrication processes. The cover system includes a cover having a configuration that complements the configuration of a solar cell substrate to be processed in an apparatus where moisture is present. A resiliently deformable seal member attached to the cover is positionable with the cover to engage and seal the top surface of the substrate. In one embodiment, the cover is dimensioned and arranged so that the seal member engages the peripheral angled edges and corners of the substrate for preventing the ingress of moisture beneath the cover. An apparatus for fabricating a solar cell using the cover and associated method are also disclosed.

Abstract: A conductive reflective film has a silver nanoparticle-sintered film with a surface coating composition containing a hydrolysate of a metal alkoxide wet-coated thereto. The coated film is then fired. Also provided is a method of manufacturing the conductive reflective film comprising the steps of coating a surface coating composition containing a hydrolysate of a metal alkoxide on a silver nanoparticle-sintered film using a wet coating method, and firing the silver nanoparticle-sintered film having the coated film. The conductive reflective film provides improved adhesion properties with respect to a base material while maintaining a high reflectivity and a high conductivity of a silver nanoparticle-sintered film.

Abstract: A film forming apparatus includes a first solution container, a second solution container, a reaction chamber, a first path, and a second path. The first solution container stores a source solution containing metal. The second solution container stores hydrogen peroxide. A substrate is in the reaction chamber, and the reaction chamber includes a heating unit that heats the substrate. The first path supplies a source solution from the first solution container to the reaction chamber. The second path supplies hydrogen peroxide from the second solution container to the reaction chamber.

Abstract: In one aspect, the present invention provides a silicon photodetector having a surface layer that is doped with sulfur inclusions with an average concentration in a range of about 0.5 atom percent to about 1.5 atom percent. The surface layer forms a diode junction with an underlying portion of the substrate. A plurality of electrical contacts allow application of a reverse bias voltage to the junction in order to facilitate generation of an electrical signal, e.g., a photocurrent, in response to irradiation of the surface layer. The photodetector exhibits a responsivity greater than about 1 A/W for incident wavelengths in a range of about 250 nm to about 1050 nm, and a responsivity greater than about 0.1 A/W for longer wavelengths, e.g., up to about 3.5 microns.

Abstract: An embodiment electronic device comprises a semiconductor chip including a first main face, a second main face and side faces each connecting the first main face to the second main face. A metal layer is disposed above the second main face and the side faces, the metal layer including a porous structure.

Abstract: In a method for producing a solar cell, a layer stack of dielectric layers is applied to a back of a solar cell substrate and the layer stack is heated and is held at temperatures of at least 700° C. during a time period of at least 5 minutes. The novel solar cell has a layer stack of dielectric layers on its back. At least one of the dielectric layers of the layer stack is densified so that its resistivity to firing-through of pastes with glass components is enhanced.

Abstract: A method for providing a textured layer in an optoelectronic device is disclosed. The method includes depositing a template layer on a first layer. The template layer has significant inhomogeneity either in thickness or in composition, or both, including the possibility of forming one or more islands to provide at least one textured surface of the island layer. The method also includes exposing the template layer and the first layer to an etching process to create or alter at least one textured surface. The altered at least one textured surface is operative to cause scattering of light.

Abstract: A semiconductor device concerning the embodiment includes a semiconductor layer which has a first surface and a second surface which is opposite to the first surface, an interlayer which is provided on the first surface and which consists of only metal whose standard oxidation-reduction potential is not lower than 0 (zero) V in an ionization tendency, and an electrode provided on the interlayer. The semiconductor device further includes an electrical conductive layer which covers an inside of a hole which is formed in the semiconductor layer so as to reach the interlayer the interlayer from the second surface, and which is electrically connected to the electrode via the interlayer which is exposed to a bottom of the hole.

Abstract: Embodiments of the present invention provide structures and methods for controlling stress in semiconductor wafers during fabrication. Features such as deep trenches (DTs) used in circuit elements such as trench capacitors impart stress on a wafer that is proportional to the surface area of the DTs. In embodiments, a corresponding pattern of dummy (non-functional) DTs is formed on the back side of the wafer to counteract the electrically functional DTs formed on the front side of a wafer. In some embodiments, the corresponding pattern on the back side is a mirror pattern that matches the functional (front side) pattern in size, placement, and number. By creating the minor pattern on both sides of the wafer, the stresses on the front and back of the wafer are in balance. This helps reduce topography issues such as warping that can cause problems during wafer fabrication.

Abstract: Provided are a CNT-polymer complex and a process for preparing the same. The CNT-polymer complex includes carbon nanotubes (CNT) coated with a block copolymer of a conjugated polymer and a non-conjugated polymer, wherein the non-conjugated polymer comprises at least one monomer selected from the group consisting of styrene, butadiene, isoprene, methacryl, acryl, acryl amide, methacryl amide, acrylonitrile, vinyl acetate, vinyl pyridine and vinyl pyrrolidone in which at least one selected from the group consisting of a sulfone group, carboxyl group, acryl group and phosphate group is protected with a protective group, and provides at least one dopant selected from the group consisting of a sulfone group, carboxyl group, acryl group and phosphate group by external stimuli so that self-doping is allowed; and the complex is soluble to an organic solvent in a neutral state but is insoluble to any solvent after subjecting it to external stimuli.

Abstract: An aluminum paste and a solar cell, the aluminum paste including aluminum powder; an organic vehicle; and antimony oxide, the antimony oxide being present in an amount of about 0.001 wt % to less than about 1.0 wt %, based on a total weight of the aluminum paste.

Abstract: A plasmonic all-optical switch includes a graphene layer, a first dielectric layer located on the graphene layer, a nano-antenna located on the first dielectric layer, and a second dielectric layer located on the nano-antenna. An incident beam is propagated by means of a surface plasmon wave generated at an interface between the graphene layer and the first dielectric layer. Further, localized surface plasmon resonance is selectively generated at an interface between the nano-antenna and the second dielectric layer by means of a pump beam incident to the nano-antenna to decrease an intensity of the incident beam. The plasmonic all-optical switch may operate at an ultrahigh speed just with a small light energy without any electric method, greatly reduce power consumption of an IT device by applying to an all-optical transistor or the like, and increase a processing rate.

Abstract: Methods of fabricating solar cells are described. A porous layer may be formed on a surface of a substrate, the porous layer including a plurality of particles and a plurality of voids. A solution may be dispensed into one or more regions of the porous layer to provide a patterned composite layer. The substrate may then be heated.

Abstract: A photovoltaic device for converting light into electrical power includes a film (16, 26, 36) of silicon nanoparticles. The silicon nanoparticle film, which can be a multilayer film, has a photoluminescence response and couples light and or electricity into semiconductor layers. A particular example photovoltaic device of the invention include a solar cell that accepts and converts light of a predetermined wavelength range into electrical power. A film containing luminescent silicon nanoparticles is optically coupled to the solar cell. The film has a predetermined thickness. The film responds to incident radiation and produces light or electron response in the predetermined wavelength range that is optically coupled into the solar cell. In preferred embodiments, the film is additionally or alternatively electrically coupled to the solar cell, which produces charge response that is electrically coupled into the solar cell.

Abstract: Methods of fabricating solar cell emitter regions using ion implantation, and resulting solar cells, are described. In an example, a back contact solar cell includes a crystalline silicon substrate having a light-receiving surface and a back surface. A first polycrystalline silicon emitter region is disposed above the crystalline silicon substrate. The first polycrystalline silicon emitter region is doped with dopant impurity species of a first conductivity type and further includes ancillary impurity species different from the dopant impurity species of the first conductivity type. A second polycrystalline silicon emitter region is disposed above the crystalline silicon substrate and is adjacent to but separated from the first polycrystalline silicon emitter region. The second polycrystalline silicon emitter region is doped with dopant impurity species of a second, opposite, conductivity type.

Abstract: A method of fabricating a solar cell with a connecting sheet includes a fixing step of bonding at least a portion of a peripheral region of a back electrode type solar cell (8) to a connecting sheet (10). A method of fabricating a solar cell module includes the step of sealing the solar cell with a connecting sheet obtained by the method on a transparent substrate (17) by a sealing material (18). A solar cell with a connecting sheet has a first adhesive arranged between a back electrode type solar cell (8) and a connecting sheet (10), and a second adhesive arranged at at least a portion of a peripheral region of the back electrode type solar cell (8) to bond a back electrode type solar cell (8) with a connecting sheet (10). A solar cell module has the solar cell with a connecting sheet sealed on a transparent substrate (17) by a sealing material (18).

Abstract: Enhanced adhesion of seed layers for solar cell conductive contacts and methods of forming solar cell conductive contacts are described. For example, a method of fabricating a solar cell includes forming an adhesion layer above an emitter region of a substrate. A metal seed paste layer is formed on the adhesion layer. The metal seed paste layer and the adhesion layer are annealed to form a conductive layer in contact with the emitter region of the substrate. A conductive contact for the solar cell is formed from the conductive layer.

Abstract: Foil trim approaches for the foil-based metallization of solar cells and the resulting solar cells are described. For example, a method involves attaching a metal foil sheet to a metallized surface of an underlying supported wafer to provide a unified pairing of the metal foil sheet and the wafer. Subsequent to attaching the metal foil sheet, a portion of the metal foil sheet is laser scribed from above to form a groove in the metal foil sheet. Subsequent to laser scribing the metal foil sheet, the unified pairing of the metal foil sheet and the wafer is rotated to provide the metal sheet below the wafer. Subsequent to the rotating, the unified pairing of the metal foil sheet and the wafer is placed on a chuck with the metal sheet below the wafer. The metal foil sheet is torn at least along the groove to trim the metal foil sheet.

Abstract: Disclosed are a dye-sensitized solar cell module and a method of manufacturing the same. The dye-sensitized solar cell module includes a working electrode formed by stacking a collector and a photo-electrode to which a dye is adsorbed on a transparent conductive substrate; a counter electrode formed by stacking a collector and a catalytic electrode on a transparent conductive substrate; and an electrolyte filled in a space between the working electrode and the counter electrode sealed by a sealant. A glass substrate for the working electrode of glass substrates forming the transparent conductive substrates for the electrodes is a thin glass plate substrate thinner than the glass substrate for the working electrode.

Abstract: An improvement in a method of making a semiconducting device having a hole-collecting electrode includes coating the hole-collecting electrode with a p-type transition metal oxide through a sol-gel process.

Abstract: A method to preparing Cadmium telluride surface before forming metal back contact is disclosed. The method can include removing carbon from Cadmium telluride surface.

Abstract: A solar cell includes semiconductor substrate of a first conductivity type; first semiconductor layer having a first conductivity type; second semiconductor layer having a second conductivity type; first electrode; second electrode; and insulating layer. First semiconductor layer and second semiconductor layer are formed on rear surface. When one end portion of insulating layer which is formed on first semiconductor layer and which is on a side close to first electrode is defined as first insulating-layer end portion and another end portion of insulating layer on a side close to second electrode is defined as second insulating-layer end portion in arrangement direction x, a distance from end point of second-semiconductor-layer end portion in contact with rear surface to second insulating-layer end portion in arrangement direction x is shorter than a distance from end point to first insulating-layer end portion in arrangement direction x.

Abstract: A solar cell module 100 comprises a light reflection member 12 placed on the light receiving surface of a n-type semiconductor substrate 11 and having a light reflecting surface 12A facing the light receiving surface protection member 2. The light reflection member 12 is positioned on an opposite side to the n-side connecting electrode 14n across the n-type semiconductor substrate 11.

Abstract: Transparent ohmic contacts to p-GaN and other high-work-function (?4.2 eV) semiconductors are fabricated from zinc stannate (e.g., ZnSnO3). ZnO and SnO2 may be sputtered from separate targets and annealed to form the zinc stannate. The Zn:Sn ratio may be tuned over the range between 1:2 and 2:1 to optimize bandgap, work function, conductivity, and transparency for the particular semiconductor and wavelength of interest. Conductivity may be improved by crystallizing the zinc stannate, by doping with up to 5 wt % Al or In, or both.

Abstract: An organic material represented by the following General Formula (1): where in the General Formula (1), R1 and R2, which may be identical to or different from each other, each represent an alkyl group having 4 to 24 carbon atoms, X represents a substituted or unsubstituted aromatic hydrocarbon group, Y represents an aromatic hydrocarbon group, an alkoxyl group, or an alkyl group, which may be substituted with a substituent, and n represents an integer of 1 to 3.

Abstract: A semiconductor device includes a wiring substrate. The wiring substrate includes a first surface, a second surface located at an opposite side of the first surface, a cavity formed in the first surface, an electrode pad formed on the first surface surrounding the cavity, and a high frequency wire exposed on the first surface. A semiconductor element is accommodated in the cavity. A bonding wire connects the semiconductor element and the electrode pad. A first protection film is arranged on the first surface of the wiring substrate to cover the first surface, the semiconductor element, the electrode pad, the bonding wire, and the high frequency wire.