Abstract: A treatment system and process is described herein to separate constituent parts from aqueous-based products or by-products, such as wastewater from a cellulosic ethanol process. The treatment system may include an ultrafiltration system, a first reverse osmosis system and a second reverse osmosis system. The treatment system may be configured to operate in modified batch mode.

Abstract: A solar cell (10) provided with connecting wires (351) which are connected to light receiving surface side fine-line electrodes (30A). The connecting wires (351) have expanding portions (BP1, BP2) which expand from the connection region (R1) where wiring member is to be connected. The expanding portions (BP1, BP2) expand in an orthogonal direction orthogonal to the longitudinal direction of the wiring material in a state where the wiring member is connected to the connecting wires (351).

Abstract: A photoelectric conversion device with a novel anti-reflection structure. In the photoelectric conversion device, a front surface of a semiconductor substrate which serves as a light-receiving surface is covered with a group of whiskers (a group of nanowires) so that surface reflection is reduced. In other words, a semiconductor layer which has a front surface where crystals grow so that whiskers are formed is provided on the light-receiving surface side of the semiconductor substrate. The semiconductor layer has a given uneven structure, and thus has effects of reducing reflection on the front surface of the semiconductor substrate and increasing conversion efficiency.

Abstract: An oxide evaporation material according to the present invention includes a sintered body containing indium oxide as a main component thereof and cerium with a Ce/In atomic ratio of 0.001 to 0.110. The L* value in the CIE 1976 color space is 62 to 95. The oxide evaporation material with the L* value of 62 to 95 has an optimal oxygen amount. Accordingly, even when a small amount of an oxygen gas is introduced into a film-formation vacuum chamber, a transparent conducting film having a low resistance and a high transmittance in the visible to near-infrared region is formed by vacuum deposition methods. Since the amount of the oxygen gas introduced is small, the difference in composition between the film and the evaporation material is made small. This reduces the variations in composition and characteristics among films formed in large quantities.

Abstract: A solar cell with a simple configuration and high efficiency, and a manufacturing method therefor are provided. A solar cell of the present invention includes a semiconductor substrate that has a first surface receiving sunlight and a second surface on the back side of the first surface and that includes a through hole passing through between the first surface and the second surface; and a first electrode that includes a main electrode portion containing a glass component and formed on the first surface of the semiconductor substrate and a conducting portion electrically connected to the main electrode portion, formed in the through hole of the semiconductor substrate, and having a lower glass-component content than the main electrode portion.

Abstract: The present invention relates to a solar cell that can recycle a substrate, and a manufacturing method thereof. The solar cell includes: i) a plurality of nano-structures distanced from each other and extended in one direction; ii) a first conductive layer covering a first end of at least one of the plurality of nano-structures; iii) a second conductive layer distanced from the first conductive layer and covering a second end of the nano-structure; and iv) a dielectric layer disposed between the first conductive layer and the second conductive layer.

Abstract: An electronic device comprising a quantum dot and an organic host, a mixture comprising a quantum dot and an organic host, a quantum dot, a method for preparing a quantum dot (QD), and a formulation including the mixture or the quantum dot are provided.

Abstract: A semiconductor device for controlling discharge of a liquid includes a power supply terminal, a ground terminal, driving portions arranged along a straight line between the power supply terminal and the ground terminal to discharge a liquid, a power supply line extending along the straight line from the power supply terminal to supply a power supply voltage to the driving portions, and a ground line extending along the straight line from the ground terminal to supply a ground voltage to the driving portions. A width of the power supply line in a direction perpendicular to the straight line continuously or gradually decreases away from the power supply terminal, and a width of the ground line in the direction continuously or gradually decreases away from the ground terminal.

Abstract: The present invention is a production method of an electrode for a dye-sensitized solar cell, comprising: a first step of providing current collector wiring on an electrically conductive substrate; and a second step of producing an electrode for a dye-sensitized solar cell by sequentially forming a plurality of thermoplastic wiring protective layers on the current collector wiring so that softening points of the thermoplastic wiring protective layers become lower as the thermoplastic wiring protective layers move away from the current collector wiring, and by heat-treating the second and subsequent thermoplastic wiring protective layers from the current collector wiring at a heat treatment temperature lower than a softening point of the thermoplastic wiring protective layer formed immediately prior thereto.

Abstract: The invention relates to a method for producing a photovoltaic solar cell having a front side designed for coupling in light, comprising the following method steps: A Producing a plurality of cutouts in a semiconductor substrate of a base doping type, B Producing one or more emitter regions of an emitter doping type at least at the front side of the semiconductor substrate, wherein the emitter doping type is opposite to the base doping type, C Applying an electrically insulating insulation layer and D Producing metallic feed through structures in the cutouts, at least one metallic base contact structure at the rear side of the solar cell, which is formed in an electrically conductive manner with the semiconductor substrate in a base doping region, at least one metallic front-side contact structure at the front side of the solar cell, which is formed in an electrically conductive manner with the emitter region at the front side of the semiconductor substrate, and at least one rear-side contact structure at the

Abstract: The present invention relates to a method for preparing, on a silicon wafer, an n+pp+ or p+nn+ structure which includes the following consecutive steps: a) on a p or n silicon wafer (1), which includes a front surface (8) and a rear surface (9), a layer of boron-doped silicon oxide (BSG) (2) is formed on the rear surface (9) by PECVD, followed by a SiOx diffusion barrier (3); b) a source of phosphorus is diffused such that the phosphorus and the boron co-diffuse and in order also to form: on the front surface (8) of the wafer obtained at the end of step a), a layer of phosphorus-doped silicon oxide (PSG) (4) and an n+ doped area (5); and on the rear surface of the wafer obtained at the end of step a), a boron-rich area (BRL) (6), as well as a p+ doped area (7); c) the layers of BSG (2) and PSG (4) oxides and SiOx (3) are removed, the BRL (6) is oxidized and the layer resulting from said oxidation is removed.

Abstract: A solar cell is provided. The substrate of the solar cell has heavily-doped regions and lightly-doped regions. The anode and the cathode are disposed on the back surface of the substrate, and thus the amount of incident light on the front surface of the substrate is increased. The anode and the cathode are in contact with the heavily doped regions to form selective emitter structure, and thus the contact resistance is reduced. The lightly-doped regions, which are not in contact with the anode and the cathode, have lower saturation current, and thus recombination of hole-electron pairs is reduced, and absorption of infrared light is increased.

Abstract: A solar cell includes a doped layer disposed on a first surface of a semiconductor substrate, a doped polysilicon layer disposed in a first region of a second surface of the semiconductor substrate, a doped area disposed in a second region of the second surface, and an insulating layer covering the doped polysilicon layer and the doped area. The insulating layer has openings exposing portions of the doped polysilicon layer and the doped layer, and the doped polysilicon layer and doped layer are respectively connected to a first electrode and a second electrode through the openings. The semiconductor substrate and the doped layer have a first doping type. One of the doped polysilicon layer and the doping area has a second doping type, and the other one of the doped polysilicon layer and the doping area has the first doping type which is opposite to the second doping type.

Abstract: A solar cell includes: a substrate; a plurality of first nanostructures provided on the substrate and arranged; and a plurality of second nanostructures provided on the substrate and arranged separate from the plurality of first nanostructures wherein an average diameter of a cross section of one of the plurality of first nanostructures that is incised in a direction that is in parallel to a substrate surface of the substrate is greater than an average diameter of a cross section of one of the plurality of second nanostructures that is incised in a direction that is in parallel to a substrate surface of the substrate.

Abstract: A solar cell module and a manufacturing method thereof are provided. A solar cell device including a light receiving surface and a non-light-receiving surface opposite to the light-receiving surface is provided. A first protective film and a cover plate are formed on the light-receiving surface, wherein the first protective film is located between the solar cell device and the cover plate. A thermal radiation material layer is screen printed and a second protective is formed on the non-light-receiving surface. A backplane is formed on the non-light-receiving surface, wherein the second protective film is located between the solar cell device and the backplane.

Abstract: The invention relates to a process for producing a glass sheet 10, 21 coated with a semiconductor material, which comprises the steps (a) production of a glass strip in a float bath 3 containing liquid tin; (b) discharge of the glass strip from the float bath 3 and optionally coating of the glass strip with a transparent, electrically conductive intermediate layer; (c) transfer of the uncoated or coated glass strip into a deposition chamber 5 for the physical deposition of the semiconductor material from the gas phase; and (d) coating of the coated or uncoated glass strip from step (c) with the semiconductor material by physical deposition of the semiconductor material from the gas phase at a gas pressure of at least 0.1 bar. The invention additionally relates to an apparatus for producing a glass strip coated with a semiconductor material, a process for producing a solar cell or a solar module and also a solar cell or a solar module which can be obtained by this process.

Abstract: A process for the formation of at least one aluminum p-doped surface region of a semiconductor substrate comprising the steps: (1) providing a semiconductor substrate, (2) applying and drying an aluminum paste on at least one surface area of the semiconductor substrate, (3) firing the dried aluminum paste, and (4) removing the fired aluminum paste with water, wherein the aluminum paste employed in step (2) includes particulate aluminum, an organic vehicle and 3 to 20 wt. % of glass frit, based on total aluminum paste composition.

Abstract: A solar cell module is described, including a series of solar cells each including a bottom electrode, a photoelectric conversion layer, an insulating pattern, a top electrode layer and a passivation layer. The conversion layer is on the bottom electrode and also on the substrate at a first side of the bottom electrode. The insulating pattern is on the bottom electrode, covering an edge portion of the conversion layer near a second side of the bottom electrode. The top electrode layer is on the conversion layer and adjacent to the insulating pattern. The passivation layer is on the top electrode layer and adjacent to the insulating pattern, wherein the top of the passivation layer on the top electrode layer is lower than the top of the insulating pattern. The bottom electrode of a solar cell is electrically connected with the top electrode layer of an adjacent solar cell.

Abstract: A charge transferor of a solar cell, which collects and transfer charges generated from a semiconductor substrate, includes at least one electrode collecting the charges; and at least one collector transferring the charges collected by the at least one electrode, the at least one collector being included in at least one collector region on the substrate, wherein the at least one collector region in a first direction comprises at least one deletion portion where the at least one collector is not formed.

Abstract: A conductive paste includes a conductive powder containing at least one of copper and nickel as a main component, a glass frit, and an organic vehicle, wherein the glass frit is a tellurium-based glass frit that essentially does not contain any lead component and contains tellurium as a network former in an amount of 35 to 70 mol % in terms of oxide, the tellurium-based glass frit containing silver as an essential component. The above conductive paste can provide favorable characteristics and favorably be used in the formation of light-receiving surface electrodes of a solar cell element even when the conductive paste includes one or more of copper and nickel as its conductive component.

Abstract: A solar cell element having a transparent substrate body, a NaxAg1-x, layer, a ZnO layer, a transparent conductive layer, and a photoelectric conversion layer including an n-type semiconductor layer and a p-type semiconductor layer. The transparent substrate body, the NaxAg1-x layer, the ZnO layer, the transparent conductive layer, and the photoelectric conversion layer are stacked in this order, x represents a value of not less than 0.001 and not more than 0.02, the NaxAg1-x layer has a thickness of 2-15.2 nanometers, and the ZnO layer has an arithmetical mean roughness of not less than 20-750 nanometers. The ZnO layer is composed of a plurality of ZnO columnar crystal grain, each ZnO columnar crystal grain has a longitudinal direction along a normal line direction of the transparent substrate body, and each ZnO columnar crystal grain has a R2/R1 ratio of 1.1-1.6.

Abstract: A masonry unit including a photovoltaic cell for generation of electricity is described herein. More particularly a photovoltaic-clad concrete block that combines the structural attributes of concrete block (or other masonry unit) and the energy production of solar photovoltaics is described herein. Methods for manufacturing, installing, and electrically connecting such photovoltaic-clad concrete blocks are also described herein.

Abstract: A bifacial solar cell is discussed. The bifacial solar cell includes a substrate, a p+-type doped region positioned at a first surface of the substrate, a P-type electrode part electrically connected to the p+-type doped region, an n+-type doped region positioned at a second surface of the substrate, and an N-type electrode part electrically connected to the n+-type doped region. The P-type electrode part is formed of a first inorganic solid powder including a first powder, which contains silver (Ag) and has an average diameter of about 0.2 ?m to 1 ?m, and a second powder, which contains a group III element and has an average diameter of about 1 ?m to 5 ?m. The N-type electrode part is formed of a second inorganic solid powder including only the first powder.

Abstract: Provided is a method capable of easily manufacturing a back contact solar cell with high photoelectric conversion efficiency. A semiconductor layer having a first conductivity which is the same as that of a semiconductor substrate is formed substantially entirely on the principal surface of the semiconductor substrate inclusive of a surface of an insulation layer. A portion of the semiconductor layer located on the insulation layer is removed, and thereby an opening is formed. The insulation layer exposed through the opening is removed while the semiconductor layer is used as a mask, and thereby a surface of a first semiconductor region is partially exposed. Electrodes which are electrically connected to the surface of the first semiconductor region and to a surface of the semiconductor layer respectively are formed.

Abstract: Methods and devices are provided for forming a low-resistance, high light transmission layer. In one embodiment of the present invention, a method is provided comprised of creating a plurality of vias on a substrate, the vias formed in material that has a maximum processing temperature that less than a pre-defined threshold; adding a plurality of electrically conductive material into the vias; and solution depositing a nanowires infused window layer that has a first thickness at certain areas and a second thickness at other areas, wherein overall sheet resistance is between about 1 to 10 ohms per square, while light transmission combined is at least 70% and creates less than 5% shadow loss. The method may involve using a transparent conductive oxide layer beneath the window layer. This can create a layer that eliminates opaque bus bars or fingers associated with traditional solar cells. This may be an all-solution deposited process using only one deposition set or multiple deposition steps.

Abstract: A solar cell includes a rear surface electrode layer a semiconductor layer formed on a surface of rear surface electrode layer a front surface electrode layer formed on a surface of semiconductor layer and a support layer on a surface of rear surface electrode layer at a side opposite the side where semiconductor layer is formed. Semiconductor layer includes at least one p-n junction. A plurality of through holes are provided, which through holes are cavities connecting support layer openings provided on a surface of support layer at a side opposite the side where rear surface electrode layer is formed with semiconductor layer openings provided on a surface of semiconductor layer at a side opposite the side where rear surface electrode layer is formed. Front surface electrode layer is formed in a region where semiconductor layer openings are not provided. A method of manufacturing the solar cell is also disclosed.

Abstract: A method of manufacturing a graphene-containing electrolyte includes, in the order recited: (a) deoxidizing graphene oxide to form graphene; (b) dissolving the graphene in a carbonate solvent to provide a graphene-containing solution; and (c) adding an oxidation-reduction agent composed of 1-butyl-2,3-dimethylimidazolium iodide (BDI) and optionally iodine (I2) into the graphene-containing solution to provide the graphene-containing electrolyte. Deoxidizing the graphene oxide may be accomplished by dissolving the graphene oxide in an aqueous solvent that is a mixture of water and an alkyl imidazole-based iodine to form a solution; and centrifuging the solution to obtain the graphene. A dye-sensitized solar cell may include the graphene-containing electrolyte to fill a space defined between first and second electrodes.

Abstract: Fabrication methods and structures relating to backplanes for back contact solar cells that provide for solar cell substrate reinforcement and electrical interconnects are described. The method comprises depositing an interdigitated pattern of base electrodes and emitter electrodes on a backside surface of a semiconductor substrate, forming electrically conductive emitter plugs and base plugs on the interdigitated pattern, and attaching a backplane having a second interdigitated pattern of base electrodes and emitter electrodes at the conductive emitter and base plugs to form electrical interconnects.

Abstract: The subject invention is related to a black glass and a solar cell assembly comprising the same. The subject invention provides a black glass comprising a glass substrate; and a black coating formed on the glass substrate, wherein the black coating comprises an inorganic film-forming material, a black pigment and an adhesive. The subject invention also provides a solar cell assembly comprising: a front glass substrate; the aforementioned black glass; and a photovoltaic cell sealed between the front glass substrate and the black glass. The black glass of the subject invention has a good thermal conductivity, waterproof performance, mechanical properties and weather resistance such that the black glass is not only aesthetically pleasing but also useful as a backside protection material of a solar cell assembly for long-term outdoor use.

Abstract: Embodiments disclosed herein include photovoltaic absorber materials (302) and photovoltaic devices (300) having absorber materials (302) with intentionally increased permittivity. Alternative embodiments include methods (200) of producing thin film photovoltaic absorbers (302) from materials having increased permittivity or methods of producing devices having absorbers (302) with increased permittivity. In selected embodiments, the permittivity of an absorber material (302) is increased by incorporating a permittivity increasing material therein.

Abstract: A film which is provided with a concave-convex microstructure body that has a concave-convex microstructure formed of a cured product of an active energy ray curable resin composition on a surface and an ultraviolet ray blocking layer that is adjacent to a surface of the concave-convex microstructure body, the surface being on the reverse side of the concave-convex microstructure-side surface, a method for producing the film, and a plate-like product, an image display device and a solar cell that are provided with the film.

Abstract: A solar cell unit having a semiconductor body formed as a solar cell, whereby the semiconductor body has a front side with a first electrical connection and a back side with a second electrical connection and a side surface formed between the front side and the back side, and having a substrate with a top side and a bottom side, whereby the substrate on the top side has a first conductive trace region, configured as part of the substrate, and the first electrical connection is electrically connected to the first conductive trace region, and the substrate on the top side has a second conductive trace region, configured as part of the substrate, and the second electrical connection is electrically connected to the second conductive trace region, and having a secondary optical element, which has a bottom side and guides light to the front side of the semiconductor body.

Abstract: A method of manufacturing a solar cell comprising steps of: (a) preparing a substrate comprising a semiconductor layer and a passivation layer formed at least on the back side of the semiconductor layer, wherein the passivation layer on the back side comprises one or more openings; (b) forming an aluminum (Al) conductor pattern at least in the openings of the passivation layer on the back side by applying an Al paste, wherein the Al paste comprises: (i) an Al powder, (ii) a glass frit, (iii) a zirconium carbide (ZrC) powder, and (iv) an organic medium; and (c) firing the Al conductor pattern.

Abstract: Methods for depositing a kesterite film comprising a compound of the formula: Cu2?xZn1+ySn(S1?zSez)4+q, wherein 0?x?1; 0?y?1; 0?z?1; ?1?q?1, generally include contacting a hydrazine-based solvent, a source of Cu, a source of Sn, a source of Zn carboxylate, a source of at least one of S and Se, under conditions sufficient to form a solution substantially free of solid particles; applying the solution onto a substrate to form a thin layer; and annealing the thin layer at a temperature, pressure, and length of time sufficient to form the kesterite film. Also disclosed are hydrazine-based precursor solutions for forming a kesterite film and a photovoltaic device including the kesterite film formed by the above method.

Abstract: The present invention relates to a solar cell comprising a semiconductor wafer, an emitter formed by at least one emitter region which comprises at least a first layer of a first conductivity type and a first contact layer allowing a carrier extraction or injection, a backcontact comprising at least a second layer of a second conductivity type opposite of said first conductivity type and a second contact layer allowing a carrier extraction or injection, electrical contacts which are connected to said emitter regions and said backcontact respectively and designed to transport an electrical current out of the solar cell. According to the invention, the area of the emitter covers between 0.

Abstract: A surface of a photovoltaic cell is coated with a solution that includes barium titanate to reduce reflection of sunlight that is incident on the surface. The solution may include a base of polydimethylsiloxane and carbon nanotubes. The process may be used in the fabrication of new photovoltaic cell assemblies, or to retrofit existing assemblies in situ.

Abstract: A solar cell module includes a plurality of solar cells each comprising a substrate, an emitter region placed at the substrate, and an anti-reflection region placed on the emitter region. The anti-reflection region includes a first opening region through which part of the emitter region is exposed and one or more second opening regions through which part of the emitter region is exposed. A first electrode is connected to the exposed emitter region of the first opening region through the anti-reflection region by metal plating and a first bus bar is connected to the exposed emitter region of one or more second opening regions through the anti-reflection region by metal plating.

Abstract: According to example embodiments, a conductive paste includes a conductive component that contains a conductive powder and a titanium (Ti)-based metallic glass. The titanium-based metallic glass has a supercooled liquid region of about 5K or more, a resistivity after crystallization that is less than a resistivity before crystallization by about 50% or more, and a weight increase by about 0.5 mg/cm2 or less after being heated in a process furnace at a firing temperature. According to example embodiments, an electronic device and a solar cell may include at least one electrode formed using the conductive paste according to example embodiments.

Abstract: The present invention provides a photoelectric conversion material comprising a fullerene derivative represented by the formula C60(R1)5(R2), wherein each R1 independently represents an organic group having a substituent; and R2 represents a hydrogen atom or a substituted or unsubstituted C1-C30 hydrocarbon group. Further, the present invention also provides a photoelectric conversion device having a self-assembled monomolecular film of the photoelectric conversion material, and a solar cell having the photoelectric conversion device.

Abstract: A thin-film solar cell includes a cell having a transparent electrode layer, a photoelectric conversion layer, and a back electrode layer stacked on a transparent insulation substrate. A plurality of cells are connected in series to constitute a cell string. A bus bar is arranged on the back electrode layer of an end cell constituting the cell string. The thin-film solar cell has a photoelectric conversion layer on a series-connection direction end of the transparent electrode layer. In plan view, a series-connection direction end of the back electrode layer at an end of the cell string and the series-connection direction end of the transparent electrode layer at the end of the cell string do not overlap, while the bus bar and the transparent electrode layer at the end cell constituting the cell string overlap at least partially. A method of fabricating the thin-film solar cell is provided.

Abstract: Hemispheres and spheres are formed and employed for a plurality of applications. Hemispheres are employed to form a substrate having an upper surface and a lower surface. The upper surface includes peaks of pillars which have a base attached to the lower surface. The peaks have a density defined at the upper surface by an array of hemispherical metal structures that act as a mask during an etch to remove substrate material down to the lower surface during formation of the pillars. The pillars are dense and uniform and include a microscale average diameter. The spheres are formed as independent metal spheres or nanoparticles for other applications.

Abstract: A conductive paste may include a conductive component and an organic vehicle. The conductive component may include an amorphous metal. The amorphous metal may have a lower resistivity after a crystallization process than before the crystallization process, and at least one of a weight gain of about 4 mg/cm2 or less and a thickness increase of about 30 ?m or less after being heated in a process furnace at a firing temperature.

Abstract: A photovoltaic device including a substrate; a first electrode placed on the substrate; a second electrode which is placed opposite to the first electrode and which light is incident on; a first unit cell being placed between the first electrode and the second electrode, and including an intrinsic semiconductor layer including crystalline silicon grains making the surface of the intrinsic semiconductor layer toward the second electrode textured; and a second unit cell placed between the first unit cell and the second electrode.

Abstract: A method of photoplating a metal contact onto a surface of a cathode of a photovoltaic device is provided using light induced plating technique. The method comprises: a) immersing the photovoltaic device in a solution of metal ions, where the metal ions are a species which is to be plated onto the surface of the cathode of the photovoltaic device; and b) illuminating the photovoltaic device, using a light source of time varying intensity. This results in nett plating which is faster in a direction normal to the surface of the cathode than in a direction in a plane of the surface of the cathode.

Abstract: A novel method and apparatus for performing the method is disclosed the apparatus comprises a laser (17), at least one ink jet print head (14), means for holding a transparent substrate having a transparent conductive layer, means (22) for adjusting the relative positions of the laser and at least one ink jet print head to the transparent conducting layer (2) and a controller to control the laser and ink jet print head whereby in a first step to inkjet print one or more coarse metal borders (15) onto the deposited TCM layer and in a second step by means of a single laser ablation process, ablating tracks in both the metal border and underlying TCM layer to form a plurality of discrete electrical busbars (12) and optionally also to form electrodes in the remainder of the TCM layer.

Abstract: Compositions, synthesis and applications for benzene, furan, thiophene, selenophene, pyrole, pyran, pyridine, oxazole, thiazole and imidazole derivatized anthra[2,3-b:6,7-b?]dithiophene (ADT) based polymers, namely, poly{5,11-bis(5-(2-ethylhexyl)thiophen-2-yl)anthra[2,3-b:6,7-b?]dithiophene-2,8-diyl-alt-2-ethyl-1-(thieno[3,4-b]thiophen-2-yl)hexan-1-one-4,6-diyl}, poly{5,11-bis(5-(2-ethylhexyl)furan-2-yl)anthra[2,3-b:6,7-b?]dithiophene-2,8-diyl-alt-2-ethyl-1-(thieno[3,4-b]thiophen-2-yl)hexan-1-one-4,6-diyl and poly{5,11-bis(5-(2-ethylhexyl)selenophen-2-yl)anthra[2,3-b:6,7-b?]dithiophene-2,8-diyl-alt-2-ethyl-1-(thieno[3,4-b]thiophen-2-yl)hexan-1-one-4,6-diyl} are disclosed. Further, an organic solar cell constructed of a derivatized anthra[2,3-b:6,7-b?]dithiophene (ADT) based polymer is discussed.

Abstract: Fabrication methods and structures are provided for the formation of monolithically isled back contact back junction solar cells. In one embodiment, base and emitter contact metallization is formed on the backside of a back contact back junction solar cell substrate. A trench stop layer is formed on the backside of a back contact back junction solar cell substrate and which is electrically isolated from the base and emitter contact metallization. The trench stop layer has a pattern for forming a plurality semiconductor regions. An electrically insulating layer is formed on the base and emitter contact metallization and the etch stop layer. And a trench isolation pattern is formed through the back contact back junction solar cell substrate to the trench stop layer which partitions semiconductor layer into a plurality of solar cell semiconductor regions on the electrically insulating layer.

Abstract: A solar cell device and a method of fabricating the same is described. The solar cell includes a back contact, an absorber over the back contact, and a front contact over the absorber. The back contact includes a back electrode layer and a graphene layer.

Abstract: A solar cell and a method of fabricating the same are provided. The solar cell includes a substrate, a back electrode layer on the substrate, a light absorbing layer on the back electrode layer, and a buffer layer on the light absorbing layer. The back electrode layer, the light absorbing layer, and the buffer layer are formed therein with a first through hole formed through the back electrode layer, the light absorbing layer, and the buffer layer, and an insulating member is deposited in the first through hole.

Abstract: This conductive paste is such that the printing properties and sintering properties are superior and is formed such that resistance of wiring after sintering is lowered. This conductive paste is characterized by being formed from copper-based metal particles and by an aspect ratio (dmax/dmin), which is defined as the ratio of the maximum diameter (dmax) and minimum diameter (dmin) for the metal particles, being greater than or equal to 1.0 and smaller than 2.2.