Abstract: Provided is a compound semiconductor solar cell (2) with improved conversion efficiency. The compound semiconductor solar cell includes a substrate (4), a back electrode (6) disposed on the substrate, a p-type compound semiconductor light absorber layer (8) disposed on the back electrode, an n-type compound semiconductor buffer layer (10) disposed on the p-type compound semiconductor light absorber layer, and a transparent electrode (12) disposed on the n-type compound semiconductor buffer layer. The p-type compound semiconductor light absorber layer (8) is formed of (AgxCu1-x)2aZnb(GeySn1-y)c(S1-zSez)4, wherein 0?x?1, 0?y?1, 0?z?10.5?a?1.5, 0.5?b?1.5, and 0.5?c?1.5. The n-type compound semiconductor buffer layer (10) contains at least one of tin and germanium. The n-type compound semiconductor buffer layer (10) has a lower tin and germanium concentration than the p-type compound semiconductor light absorber layer (8).

Abstract: A solar cell according to an example embodiment includes: a substrate; a plurality of first electrodes formed on the substrate and separated by a plurality of first separation grooves; a barrier layer formed in each of the first separation grooves; a photoactive layer formed on the first electrode and the barrier layer and including a through-groove that exposes a neighboring first electrode; and a second electrode formed on the photoactive layer and electrically connected with a neighboring first electrode through the through-groove.

Abstract: A high transmittance thin film solar panel includes a transparent substrate, a front electrode layer, a light absorption layer and a rear electrode layer. The light absorption layer is formed with opening patterns with the same width at positions aligned correspondingly to form at least one first opening trench, a plurality of second opening trenches with continuously and periodically sinusoidal-wave shape, and a plurality of third opening trenches parallel to, interlace with or superpose the second opening trenches, and extend in a direction orthogonal to the direction of the first opening trench. The high transmittance thin film solar panel of the present invention is mainly used for green buildings. The opening trenches of the high transmittance thin film solar panel are formed in a manner of curve shape by oscillating laser head, can enhance the transmittance by more than about 3% in comparison with the conventional one.

Abstract: A method of forming a photovoltaic device is provided that includes a p-n junction with a p-type semiconductor portion and an n-type semiconductor portion, wherein an upper exposed surface of one of the semiconductor portions represents a front side surface of the semiconductor substrate. Patterned antireflective coating layers are formed on the front side surface of the semiconductor surface to provide a grid pattern including a busbar region and finger region. A mask having a shape that mimics each patterned antireflective coating layer is provided atop each patterned antireflective coating layer. A metal layer is electrodeposited on the busbar region and the finger regions. After removing the mask, an anneal is performed that reacts metal atoms from the metal layer react with semiconductor atoms from the busbar region and the finger regions forming a metal semiconductor alloy.

Abstract: A method of manufacturing a solar cell module includes preparing a solar cell substrate including a support substrate, an electric power generating layer that receives light beams and generates electric power, and a conductive layer that is formed on the electric power generating layer, forming a resist layer on the conductive layer in such a manner that an exposed portion at which the conductive layer is exposed is formed, forming an electric conduction portion at a part of the exposed portion, and etching the conductive layer by using the resist layer and the electric conduction portion as a mask.

Abstract: To improve characteristics, reliability, and the like of a solar cell element, the solar cell element includes: a semiconductor substrate which includes a first main surface and a second main surface that is positioned opposite to the first main surface, and in which a p-type semiconductor region and an n-type semiconductor region are stacked in such a manner that the p-type semiconductor region is positioned closest to the first main surface and the n-type semiconductor region is positioned closest to the second main surface; a first passivation layer which is disposed on the p-type semiconductor region that is positioned closest to the first main surface, and which includes aluminum oxide; and a first protective layer that is disposed on the first passivation layer. The first protective layer includes an oxide that contains at least one kind of zirconium and hafnium.

Abstract: A metal or metal alloy including a region with hierarchical micro-scale and nano-scale structure shapes, the surface region is super-hydrophobic and has a spectral reflectance of less than 30% for at least some wavelengths of electromagnetic radiation in the range of 0.1 ?m to 10 ?m. Methods for forming the hierarchical micro-scale and nano-scale structure shapes on the metal or metal alloy are also described.

Abstract: Electrode comprising a conductive substrate on which a uniform layer of aggregates A, having an average diameter ranging from 40 to 100 nm, is deposited, on which a non-homogeneous distribution of aggregates B, having an average diameter ranging from 300 nm to 1,200 nm, is superimposed, both of said aggregates being composed of particles containing one or more metals Me selected from platinum, palladium and gold, having an average diameter ranging from 8 to 10 nm. The use of said electrode, as cathode, for DSSC devices produces a marked improvement in the performances of the cell with respect to the results that can be obtained with known cathodes.

Abstract: Conventionally, CdTe solar cells are grown in superstrate configuration where the light enters the photovoltaic device through a transparent substrate. Still, efficiencies of CdTe solar cells grown in substrate configuration have so far been considerably lower than those grown in superstrate configuration. This invention discloses a photovoltaic device (0) in substrate configuration and a process of making thereof with which efficiencies approaching those of superstrate devices can be reproducibly achieved. Furthermore, long term stability is expected to be better than in state of the art devices. This method is advantageous because the growth in substrate configuration offers several advantages like the growth on metal foils and a more precise control of the junction.

Abstract: [Problem] To provide a photovoltaic device capable of generating power whether day or night, without affecting the appearance of a structure or reducing lighting or other functions, and able to inhibit rises in room temperature by converting thermal radiation into electrical energy. [Means to Solve Problems] Provide a photoelectric conversion element 3 with a photovoltaic device 1 on structural members 2a-2d facing the outside of a house or other structure. Power generated by the photoelectric conversion element 3 is extracted via a power extraction unit 4. The power conversion element 3 includes a semiconductor layer 11, conductive layer 20, a metal nanostructure 30 having multiple periodic structures 33, a first electrode 41 and a second electrode 42. The first and second electrodes 41, 42 are separated in the direction of the surface of the photoelectric conversion element 1 with the terminals 71, 81 of the power extraction unit 4 respectively connected.

Abstract: A back electrode type solar cell in which a no-electrode-formed region where no electrode is placed is provided in a part of a peripheral portion of a back surface of the back electrode type solar cell such that a line connecting end portions of a plurality of electrodes to one another includes a partially inwardly recessed region and the no-electrode-formed region is located adjacent to each of an electrode for n-type and an electrode for p-type adjacent to each other, a solar cell module, a method of manufacturing a back electrode type solar cell with interconnection sheet, and a method of manufacturing a solar cell module are provided.

Abstract: A crack resistant solar cell module includes a protective package mounted on a frame. The protective package includes a polyolefin encapsulant that protectively encapsulates solar cells. The polyolefin has less than five weight percent of oxygen and nitrogen in the backbone or side chain. In other words, the combined weight percent of oxygen and nitrogen in any location in the molecular structure of the polyolefin is less than five. The polyolefin also has a complex viscosity less than 10,000 Pa second at 90° C. as measured by dynamic mechanical analysis (DMA) before any thermal processing of the polyolefin. The protective package includes a top cover, the encapsulant, and a backsheet. The solar cell module allows for shipping, installation, and maintenance with less risk of developing cracks on the surfaces of the solar cells.

Abstract: The present invention provides a dye-sensitized solar cell which enhances an area of a photo electrode by arranging metal wires on a surface of a transparent substrate or a transparent conductive layer without degrading a transparency of the solar cell, allowing the metal wires to act as a collector electrode exclusively or together with a metal electrode.

Abstract: An electrode structure includes a first diffusion barrier layer, an aluminum reflective layer formed over the first diffusion barrier layer. The aluminum reflective layer has a thickness from about 500 angstroms (?) to less than 2,000 ?, a second diffusion barrier layer formed over the aluminum reflective layer, and an electrode layer overlying the second diffusion barrier layer. The electrode structure is applicable in a light emitting diode device.

Abstract: The present invention relates to an emitter wrap-through solar cell and a method for preparing the same. The solar cell according to the present invention has a structure that may minimize generation of leakage current and minimize energy conversion efficiency measurement error. And, the preparation method of a solar cell according to the present invention may easily confirm the alignment state of the electrode, and thus, provide more improved productivity.

Abstract: A method for manufacturing asolar cell includes texturing a front surface of a semiconductor substrate having a first conductive type dopant by using a dry etching method, forming an emitter layer by ion-implanting a second conductive type dopant into the front surface of the semiconductor substrate, forming a back passivation film on a back surface of the semiconductor substrate; and forming a first electrode electrically connected to the emitter layer and a second electrode being in partial contact with the back surface of the semiconductor substrate.

Abstract: A solar cell includes a substrate; a back electrode layer on the substrate; a light absorbing layer on the back electrode layer; and a buffer layer on the light absorbing layer. A first through hole is formed through the back electrode layer, a second through hole is formed through the buffer layer and the light absorbing layer, and the first through hole is overlapped with the second through hole.

Abstract: Production of a silicon wafer coated with a passivation layer. The coated silicon wafer may be suitable for use in photovoltaic cells which convert energy from light impinging on the front face of the cell into electrical energy.

Abstract: The present invention is premised upon an improved photovoltaic device (“PVD”) and method of use, more particularly to an improved photovoltaic device with an integral locator and electrical terminal mechanism for transferring current to or from the improved photovoltaic device and the use as a system.

Abstract: A HIT solar cell is provided, including a p-type crystalline silicon substrate having a light-receiving surface, a first intrinsic amorphous silicon thin-film layer formed on the light-receiving surface of the p-type crystalline silicon substrate, an n-type amorphous oxide layer formed on the first intrinsic amorphous silicon thin-film layer, and a first transparent conductive layer formed on the n-type amorphous oxide layer. In the HIT solar cell, the n-type amorphous oxide layer can be directly formed, without forming the first intrinsic amorphous silicon thin-film layer, and the n-type amorphous oxide layer can be divided into an n?-type amorphous oxide layer and an n+-type amorphous oxide layer that are formed sequentially.

Abstract: An electrical component, and method of making the component, includes a metallic article having a plurality of elongated elements that are configured to serve as electrical conduits for a photovoltaic cell. The elongated elements are interconnected such that the metallic article forms a unitary, free-standing piece. An elongated element in the plurality of elongated elements has an expansion segment along its length.

Abstract: A back contact solar cell is described which includes a semiconductor light absorbing layer; a first-level metal layer (M1), the M1 metal layer on a back side of the light absorbing layer, the back side being opposite from a front side of the light absorbing layer designed to receive incident light; an electrically insulating backplane sheet backside of said solar cell with the M1 layer, the backplane sheet comprising a plurality of via holes that expose portions of the M1 layer beneath the backplane sheet; and an M2 layer in contact with the backplane sheet, the M2 layer made of a sheet of pre-fabricated metal foil material comprising a thickness of between 5-250 ?m, the M2 layer electrically connected to the M1 layer through the via holes in the backplane sheet.

Abstract: Disclosed herein are a glass frit and a composition for solar cell electrodes including the same. The glass frit includes lead oxide (PbO) and boron oxide (B2O3) in a weight ratio of lead oxide to boron oxide of about 1:0.075 to about 1:1, wherein a mixture of the glass frit and aluminum (Al) powder in a weight ratio of about 1:1 exhibits a phase transition peak in the range of about 400° C. to about 650° C. on a cooling curve obtained via TG-DTA analysis, measured after heating the mixture to 900° C. at a heating rate of 20° C./min, holding for ten minutes, followed by cooling the mixture at a cooling rate of 10° C. The composition can provide stable efficiency given varying surface resistance and minimize adverse influence on a p-n junction.

Abstract: A photovoltaic solar cell is described that, according to one example embodiment, includes a semiconductor light absorbing layer and a dielectric stack on at least one of a front side of the light absorbing layer or a back side of the light absorbing layer. The dielectric stack includes a tunneling dielectric layer being sufficiently thin for charge carriers to tunnel across, and an overlaying dielectric layer being a different material than the overlaying dielectric. The solar cell also includes an electrically conductive contact physically contacting the overlaying dielectric. The electrically conductive contact and the overlaying dielectric together have either a work function suitable for selective collection of electrons that closely matches a conduction band of the light absorbing layer, or a work function suitable for selective collection of holes that closely matches a valence band of the light absorbing layer.

Abstract: A method for forming an electrode of a solar battery on an electrode forming face of a semiconductor substrate, comprises: applying a resin containing a conductor material to be the electrode onto an electrode forming region of the electrode forming face; causing a pattern transfer member, on which a reverse pattern obtained by reversing a pattern of the electrode is formed, to face the electrode forming face, and registering the pattern transfer member on a position in which the electrode is to be formed in the electrode forming face; pressing the pattern transfer member against the electrode forming face to transfer the electrode pattern to the resin containing the conductor material; separating the pattern transfer member from the resin containing the conductor material; and baking the electrode pattern transferred to the resin containing the conductor material to form the electrode on the electrode forming face of the substrate.

Abstract: A method of connecting two solar cells is disclosed. In one embodiment, the method comprises gripping an interconnect with a head of positioning device, heating the interconnect with the head of the positioning device to between two predetermined temperatures, where one is higher than the other, positioning the interconnect so as to overlay two adjacent solar cells, coupling the interconnect to each of the two adjacent solar cells, and releasing the interconnect from the head.

Abstract: This invention is directed to a flexible solar cell photovoltaic module with high light transmittance based on modified substrate, which belongs to the field of thin-film solar cell technology. The objective of the present invention to provide a technical solution for a transparent flexible solar cell module and its fabrication method. Technical features include using a stainless steel template to mold a modified polyimide PI substrate (the PI substrate). The PI substrate has light-passing through-holes, including draining holes and convergence holes, through and distributed on the PI substrate, a conductive film layer, and various stacked photoelectric conversion film layers.

Abstract: Accordingly, a method of forming a metal chalcogenide material may comprise introducing at least one metal precursor and at least one chalcogen precursor into a chamber comprising a substrate, the at least one metal precursor comprising an amine or imine compound of an alkali metal, an alkaline earth metal, a transition metal, a post-transition metal, or a metalloid, and the at least one chalcogen precursor comprising a hydride, alkyl, or aryl compound of sulfur, selenium, or tellurium. The at least one metal precursor and the at least one chalcogen precursor may be reacted to form a metal chalcogenide material over the substrate. A method of forming a metal telluride material, a method of forming a semiconductor device structure, and a semiconductor device structure are also described.

Abstract: The present invention provides a solar-cell-integrated gas production device that can generate a first gas and a second gas by utilizing an electromotive force of a solar cell, and that can supply power to an external circuit by utilizing the same solar cell.

Abstract: This disclosure relates to electroconductive paste formulations useful in solar panel technology. In one aspect, the disclosure relates to an inorganic reaction system for use in electroconductive paste compositions, wherein the inorganic reaction system comprises a lead containing matrix composition and a tellurium containing matrix composition. In another aspect, the disclosure relates to an electroconductive paste composition comprising a conductive metal component, an inorganic reaction system and an organic vehicle. Another aspect of the disclosure relates to a solar cell produced by applying an electroconductive paste composition of the invention to a silicon wafer. Yet another aspect relates to a solar cell module assembled using solar cells produced by applying an electroconductive paste composition to a silicon wafer, wherein the electroconductive paste composition comprises an conductive metal component, an inorganic reaction system and an organic vehicle.

Abstract: A semiconductor device, in particular a solar cell, comprises a semiconductor substrate having a semiconductor substrate surface and a passivation composed of at least one passivation layer which surface-passivates the semiconductor substrate surface, wherein the passivation layer comprises a compound composed of aluminum oxide, aluminum nitride or aluminum oxynitride and at least one further element.

Abstract: To provide a resource-saving photoelectric conversion device with excellent photoelectric conversion characteristics. Thin part of a single crystal semiconductor substrate, typically a single crystal silicon substrate, is detached to structure a photoelectric conversion device using a thin single crystal semiconductor layer, which is the detached thin part of the single crystal semiconductor substrate. The thin part of the single crystal semiconductor substrate is detached by a method in which a substrate is irradiated with ions accelerated by voltage, or a method in which a substrate is irradiated with a laser beam which makes multiphoton absorption occur. A so-called tandem-type photoelectric conversion device is obtained by stacking a unit cell including a non-single-crystal semiconductor layer over the detached thin part of the single crystal semiconductor substrate.

Abstract: Disclosed is a multilayered weatherable film for a solar cell, which has superior elongation change rate, strength change rate and haze and thus is suitable for use in a solar cell, and includes a hard layer having a polyester or copolyester polymer resin and a soft layer having polybutylene terephthalate containing polytetramethylene ether glycol, which are regularly or irregularly laminated in a multilayer form.

Abstract: A radiation-collecting device includes at least one radiation-collecting element and a scattering layer placed, in relation to the element, on that side on which the radiation is incident on the device. The scattering layer has a transparent fibrous structure and a transparent medium for encapsulating the fibers of the fibrous structure, the absolute value of the difference between the refractive index of the fibers of the fibrous structure and the refractive index of the encapsulating medium being equal to or greater than 0.05.

Abstract: Disclosed is a photovoltaic device. The photovoltaic device includes: a substrate; a first electrode placed on the substrate; a second electrode which is placed opposite to the first electrode and which light is incident on; a first unit cell being placed between the first electrode and the second electrode, and including an intrinsic semiconductor layer including crystalline silicon grains making the surface of the intrinsic semiconductor layer toward the second electrode textured; and a second unit cell placed between the first unit cell and the second electrode.

Abstract: Paste compositions, methods of making a paste composition, and methods of making a solar cell contact are disclosed. The paste composition can contain a nickel intermetallic compound such as nickel silicide, nickely boride or nickel phosphide, a glass frit, a metal additive and an organic vehicle system. The paste can be used for making a solar cell contact.

Abstract: A photovoltaic cell includes: (1) a front contact; (2) a back contact; (3) a set of stacked layers between the front contact and the back contact; and (4) an encapsulation layer covering side surfaces of the set of stacked layers. At least one of the set of stacked layers includes a halide material having the formula: [AaBbXxX?x?X?x?X??x??][dopants], where A is selected from elements of Group 1 and organic moieties, B is selected from elements of Group 14, X, X?, X?, and X?? are independently selected from elements of Group 17, a is in the range of 1 to 12, b is in the range of 1 to 8, and a sum of x, x?, x?, and x?? is in the range of 1 to 12.

Abstract: Disclosed herein, in certain instances, is a novel photovoltaic cell that uses unique micro-architectural and multi-layer functional designs. Further disclosed herein, in certain instances, is a 3-dimensional electrode. Disclosed herein, in certain instances, is a novel electroluminescent cell that uses unique micro-architectural and multi-layer functional designs. Further disclosed herein, in certain instances, is a 3-dimensional diode.

Abstract: A photovoltaic device is provided that includes a first electrode layer and a second electrode layer; and a waveguiding structure disposed between the first electrode layer and the second electrode layer which includes an active layer adapted to convert photons transmitted to the active layer to electrons and holes. The waveguiding structure further includes a first layer adjacent the first electrode layer that includes a hole-conducting material having a first index of refraction, and a second layer including an electron-conducting material having a second index of refraction, wherein the active layer is disposed therebetween. The active layer has an index of refraction that is less than each of the first index of refraction and the second index of refraction and a thickness. The waveguiding structure is characterized by guided modes adapted for optically confining the photons within the active layer.

Abstract: A method for manufacturing a photodiode including the steps of providing a substrate, solution depositing a quantum nanomaterial layer onto the substrate, the quantum nanomaterial layer including a number of quantum nanomaterials having a ligand coating, and applying a thin-film oxide layer over the quantum nanomaterial layer.

Abstract: The present disclosure described herein generally relates to a dye-sensitized solar cell including an organic-inorganic composite dye having a perovskite structure, and a producing method of the same.

Abstract: Provided is a solar cell including a semiconductor substrate having a first conductivity type; a semiconductor layer having a second conductivity type and disposed on one surface of the semiconductor substrate; a passivation layer disposed on the other surface of the semiconductor substrate; a front electrode disposed on the semiconductor layer; and a back electrode disposed on the passivation layer, wherein the passivation layer comprises a plurality of silicon layers having different crystallinity.

Abstract: Plasmonic graphene is fabricated using thermally assisted self-assembly of plasmonic nanostructure on graphene. Silver nanostructures were deposited on graphene as an example.

Abstract: A wet-type solar cell includes a support composed of a light transmissive material and a photoelectric conversion element having a conductive layer, a photoelectric conversion layer including a porous semiconductor layer, a porous insulating layer, and a counter electrode conductive layer successively provided on the support. A first region where the photoelectric conversion layer is provided on the conductive layer and a second region where the photoelectric conversion layer is not provided on the conductive layer are present, with a scribe line portion formed by not providing the conductive layer on the support lying therebetween. The counter electrode conductive layer extends from the first region to the second region over the scribe line portion, and the scribe line portion has a line width not smaller than 70 ?m.

Abstract: A solar cell device including an electrode formed by applying a conductive paste containing at least a conductive powder, glass frit and an organic vehicle onto a semiconductor substrate provided with a silicon nitride layer on a surface thereof and firing the applied conductive paste, wherein the electrode has a structure with a front electrode layer containing silver as a main component, a glass layer containing tellurium glass as a main component, and a silicon oxide layer containing plural silver particles precipitated by the firing. The solar cell device is provided with an electrode formed using a conductive paste not containing lead glass and has good solar cell characteristics.

Abstract: A method of making a doped titanium oxide coating in a float glass manufacturing process and the coated glass article made thereby wherein the dopant is a niobium or tantalum compound. The doped titanium oxide coating preferably exhibits an electrical conductivity >1×10?3 S/cm.

Abstract: The present invention provides a conductive paste characterized by a crystal-based corrosion binder being combined with a glass frit and mixed with a metallic powder and an organic carrier. Methods for preparing each components of the conductive paste are disclosed including several embodiments of prepare Pb—Te—O-based crystal corrosion binder characterized by melting temperatures in a range of 440° C. to 760° C. and substantially free of any glass softening transition upon increasing temperature. Method for preparing the conductive paste includes mixture of the components and a grinding process to ensure all particle sizes in a range of 0.1 to 5.0 microns. Method of applying the conductive paste for the formation of a front electrode of a semiconductor device is presented to illustrate the effectiveness of the crystal-based corrosion binder in transforming the conductive paste to a metallic electrode with good ohmic contact with semiconductor surface.

Abstract: The present invention is directed to an electroconductive silver thick film paste composition comprising Ag, a glass frit and rhodium resinate, Cr2O3 or a mixture thereof all dispersed in an organic medium. The present invention is further directed to an electrode formed from the paste composition and a semiconductor device and, in particular, a solar cell comprising such an electrode. The paste is particularly useful for forming a tabbing electrode.

Abstract: A solar cell element includes: a transparent body; a LixAg1-x layer (0.001?x?0.05) having a thickness (2-15 nm); a ZnO layer having an arithmetical mean roughness (20-760 nm); a transparent conductive layer; and a photoelectric conversion layer including n-type and p-type layers, further includes n-side and p-side electrodes, the ZnO layer is composed of ZnO columnar crystal grains grown on the LixAg1-x layer; each ZnO grain has a longitudinal direction along a normal line of the body, and has a width increasing from the LixAg1-x layer toward the transparent conductive layer, and has a width which appears by cutting each ZnO grain along the normal line, and has a R2/R1 ratio (1.1-1.6); where R1 represents the width of one end of the ZnO grain, the one end being in contact with the surface of the LixAg1-x layer; and R2 represents the width of the other end of the ZnO grain.

Abstract: The invention is directed to a polymer thick film conductive composition comprising (a) a conductive silver-coated copper powder; and (b) an organic medium comprising two different resins and organic solvent, wherein the ratio of the weight of the conductive silver-coated copper powder to the total weight of the two different resins is between 5:1 and 45:1. The invention is further directed to a method of electrode grid and/or bus bar formation on thin-film photovoltaic cells using the composition and to cells formed from the method and the composition.